2N2218 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N2218
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar 2N2218
2N2218 Datasheet (PDF)
2n2218 2n2219.pdf
TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-B
2n2218 2n2218a 2n2218al 2n2219 2n2219a 2n2219al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL
2n2218-2n2219-2n2221-2n2222.pdf
2N2218-2N22192N2221-2N2222HIGH-SPEED SWITCHESDESCRIPTIONThe 2N2218, 2N2219, 2N2221 and 2N2222 are sili-con planar epitaxial NPN transistors in JedecTO-39 (for 2N2218 and 2N2219) and in JedecTO-18 (for 2N2221 and 2N2222) metal cases. Theyare designed for high-speed switching applicationsat collector currents up to 500 mA, and feature use-ful current gain over a wide range of
2n2218-a 2n2219-a.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n2218x.pdf
2N2218XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n2218ax.pdf
2N2218AXDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 40V dia.IC = 0.8A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100)
2n2218a 19a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A2N2219ATO-39Switching And Linear Application DC And VHF Amplifier ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL 2N2218A,19A UNITCollector -Emitter Voltage VCEO 40 VCollector -Base Voltage VCBO 75 VEmitter -Base Voltage VEBO 6.0 V
2n2218al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN2N2218A 2N2219A JANTX2N2218AL 2N2219AL
Otros transistores... 2N2210 , 2N2211 , 2N2212 , 2N2214 , 2N2216 , 2N2217 , 2N2217-51 , 2N2217A , BD135 , 2N2218A , 2N2218AQF , 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF .
