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100DA025D .. 2N1011
2N1012 .. 2N1201
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2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508AW
BU508AX .. BUL57PI
BUL58A .. BUV28F
BUV28FI .. BUX76
BUX77 .. C744
C760 .. CEN-A44
CEN-A45 .. CJD175
CJD176 .. CMPT5179
CMPT5401 .. CS9013E
CS9013F .. CSB858B
CSB858C .. CSD1468R
CSD1468S .. CZT4033
CZT5338 .. D38W13
D38W14 .. D44VH7
D44VH8 .. DH3467CD
DH3467CN .. DTA115TEA
DTA115TKA .. DTC143T
DTC143TCA .. DXTA92
DXTN07100BP5 .. ECG342
ECG343 .. ES3124
ES3125 .. FA1F4Z
FA1L3M .. FJV3103R
FJV3104R .. FMMT489
FMMT4890 .. FT3641
FT3642 .. GBD266
GBD267 .. GES4249
GES4250 .. GFT44/15E
GFT44/30 .. GT2906
GT305A .. HA7530
HA7531 .. HN1A02F
HN1A07F .. HUN5213
HUN5214 .. JC556A
JC556B .. KF507
KF508 .. KRA726T
KRA726U .. KRC659E
KRC659F .. KSA614-O
KSA614-R .. KSC2518
KSC2518-O .. KSD1691-O
KSD1691-Q .. KSR2006
KSR2007 .. KT315A
KT315A-1 .. KT6103A
KT6104A .. KT8123A
KT8124A .. KT847B
KT848A .. KTA1659A
KTA1660 .. KTC802E
KTC8050 .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE3520
MJE3521 .. MM4010
MM4018 .. MMBT4401T
MMBT4401W .. MMUN2132
MMUN2132L .. MP37A
MP37B .. MPQ5140
MPQ5141 .. MPS751
MPS753 .. MRF342
MRF3866R2 .. MUN5334DW1
MUN5335DW .. NB011EJ
NB011EK .. NB122H
NB122HH .. NB322F
NB322H .. NPS3702
NPS3703 .. NSS30070MR6T1G
NSS30071MR6T1G .. OC450K
OC45N .. PBSS304NZ
PBSS304PD .. PEMB14
PEMB15 .. PN4124
PN4125 .. PZT6718
PZT751 .. RN1119MFV
RN1130MFV .. RN2316
RN2317 .. RS7641
RT141 .. SD338
SD339 .. SGS112
SGS115 .. SRA2201
SRA2201E .. STA124SF
STA3073F .. SUR561J
SUR566EF .. TA1628
TA1650A .. TI619
TI620 .. TIP75
TIP75A .. TN3253
TN3390 .. TP4140
TP4141 .. UMD16N
UMD1N .. UN6123
UN6124 .. ZT1480
ZT1481 .. ZTX331K
ZTX331M .. ZXTN25020DZ
ZXTN25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N222 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N222

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.07

Tensión colector-base (Ucb): 15

Tensión colector-emisor (Uce): 12

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 0.07

Temperatura operativa máxima (Tj), °C: 85

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.4

Capacitancia de salida (Cc), pF: 70

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO1

Búsqueda de reemplazo de transistor bipolar 2N222

2N222 PDF doc:

1.1. mtp2n2222a.pdf Size:238K _motorola

2N222
2N222
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CEO 40 Vdc (IC = 10 mAdc, IB = 0) Col

1.2. p2n2222a.pdf Size:238K _motorola

2N222
2N222
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 CollectorEmitter Voltage VCEO 40 Vdc 3 CollectorBase Voltage VCBO 75 Vdc CASE 2904, STYLE 17 EmitterBase Voltage VEBO 6.0 Vdc TO92 (TO226AA) Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CEO 40 Vdc (IC = 10 mAdc, IB = 0) Col

1.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

2N222
2N222
DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING High current (max. 800 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case Linear amplification and switching. DESCRIPTION 3 handbook, halfpage 1 2 NPN switching transistor in a TO-18 metal package. 2 PNP complement: 2N2907A. 3 MAM264 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 - 60 V 2N2222A - 75 V VCEO collector-emitter voltage open base 2N2222 - 30 V 2N2222A - 40 V IC collector current (DC) - 800 mA Ptot total power dissipation Tamb ? 25 C - 500 mW hFE DC current gain IC = 10 m

1.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N222
2N222
2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of collector cur- rent, low leakage currents and low saturation volt- ages. 2N2218/2N2219 approved to CECC 50002- TO-39 TO-18 100, 2N2221/2N2222 approved to CECC 50002-101 available on request. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-base Voltage (IE =0) 60 V VCEO Collector-emitter Voltage (IB = 0) 30 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 0.8 A Pto t Total Power Dissipation at T ? 25 C amb for 2N2218 and 2N2219 0.8 W for 2N2221 and 2N2222 0.5 W at Tcase ? 25 C for 2N2218 and 2N2219 3 W for 2N2221 and

1.5. 2n2219a_2n2222a.pdf Size:166K _st

2N222
2N222
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.6. 2n2222a_2n2219a.pdf Size:168K _st

2N222
2N222
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Base Voltage (I = 0) 75 V CBO E V Collector-Emitter Voltage (I = 0) 40 V CEO B VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) 0.8 A Ptot Total Dissipation at Tamb ? 25 oC 0.8 W for 2N2219A 0.5 W for 2N2222A at T ? 25 oC C 3 W for 2N2219A 1.8 W for 2N2222A o Tstg Storage Temperature -65 to 175 C o Tj Max. Operating Junction Temperature 175 C 1/7 February 2003 2N2219

1.7. 2n2221a_2n2222a.pdf Size:116K _central

2N222
2N222
DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 800 mA Power Dissipation PD 400 mW Power Dissipation (TC=25C) PD 1.2 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance ?JA 438 C/W Thermal Resistance ?JC 146 C/W ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) 2N2221A 2N2222A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=60V 10 10 nA ICBO VCB=60V, TA=150C 10 10 A IEBO VEB=3.0V 10 10 nA ICEV VCE=60V, VEB=3.0V 10 10 nA BVCBO IC=10A 75 75 V BVCEO IC=10mA 40 40 V BVEBO IE=10A 6.0 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 0.

1.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N222
2N222
MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features High current (max.800mA) Low voltage (max.40V) NPN Switching Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage TO-18 2N2222 30 V 2N2222A 40 VCBO Collector-Base Voltage 2N2222 60 V 2N2222A 75 VEBO Emitter-Base Voltage 2N2222 5.0 V 2N2222A 6.0 IC Collector Current (DC) 800 mA ICM Peak Collector Current 800 mA IBM Peak Base Current 200 mA O TJ Operating Junction Temperature -55 to +150 C O TSTG Storage Temperature -55 to +150 C Thermal Characteristics Symbol Rating Max Unit Total power Dissipation Ptot TA 25 500 mW TC 25 1.2 W RJC Thermal Resistance, Junction to Case 146 K/W RJA Thermal Resistance, Junction to Ambient 350 K/W E

1.9. p2n2222a-d.pdf Size:164K _onsemi

2N222
2N222
P2N2222A Amplifier Transistors NPN Silicon Features These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA =25C PD 625 mW Derate above 25C 5.0 mW/C TO--92 Total Device Dissipation @ TC =25C PD 1.5 W CASE 29 Derate above 25C 12 mW/C STYLE 17 Operating and Storage Junction TJ, Tstg --55 to C Temperature Range +150 1 1 2 2 3 THERMAL CHARACTERISTICS 3 STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction to Ambient R?JA 200 C/W Thermal Resistance, Junction to Case R?JC 83.3 C/W MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Funct

1.10. 2n2222aua.pdf Size:186K _optek

2N222
2N222

1.11. 2n2222aub.pdf Size:250K _optek

2N222
2N222
Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Miniature package to minimize circuit Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0 board area Collector Current-Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800 mA Hermetically sealed Operating Junction Temperature (T ). . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C J Qualification per MIL-S-19500/255 Storage Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . .

1.12. 2n2223a.pdf Size:18K _semelab

2N222
2N222
2N2223A SEME LAB MECHANICAL DATA Dimensions in mm (inches) DUAL NPN TRANSISTOR 8.51 (0.335) 9.40 (0.370) IN TO77 HERMETIC PACKAGE 7.75 (0.305) 8.51 (0.335) FEATURES 1.02 Silicon Planar Epitaxial NPN Transistor (0.040) Max. High Rel and Screening Options Available. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 5 (0.100) 0.74 (0.029) 3 6 1.14 (0.045) 2 1 45? 0.71 (0.028) 0.86 (0.034) TO77 METAL PACKAGE PIN 1 Collector PIN 4 Emitter PIN 2 Base PIN 5 Base PIN 3 Emitter PIN 6 Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCEO Collector Emitter Voltage 60V VCER Collector Emitter Voltage 80V VCBO Collector Base Voltage 100V VEBO Emitter Base Voltage 7V IC Collector Current 500mA TJ , Tstg Operating and Storage Junction Temperature Range 65 to +200C Per Side Total Device PD Total Device Dissipation @ TA = 25C 0.5W 0.6W Derate above 25C 2.86mW/C 3.43mW/C PD Total Device Dissip

1.13. 2n2221.pdf Size:10K _semelab

2N222
2N222
2N2221 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 30V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.8A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 1 2 TO18 (TO206AA) PINOUTS 1 Emitter 2 Base 3 Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 30 V IC(CONT) 0.8 A hFE @ 10/0.15 (VCE / IC) 40 120 - ft 250M Hz PD 0.5 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no

1.14. 2n2221a_22a.pdf Size:222K _cdil

2N222
2N222
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2221A,22A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 800 mA Power Dissipation @Ta=25 degC PD 500 mW Derate Above 25deg C 2.28 mW/deg C @ Tc=25 degC PD 1.2 W Derate Above 25deg C 6.85 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT Collector -Emitter Voltage VCEO IC=10mA,IB=0 40 - V Collector -Base Voltage VCBO IC=10uA.IE=0 75 - V Emitter-Base Voltage VEBO IE=10uA, IC=0 6.0 - V Collector-Cut off Current ICBO VCB=60V, IE=0 - 10 nA Ta=150 deg C VCB=6

1.15. 2n2221_2.pdf Size:267K _cdil

2N222
2N222
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal Can Package Switching and Linear Application DC and VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N2221, 22 UNIT VCEO Collector Emitter Voltage 30 V VCBO Collector Base Voltage 60 V VEBO Emitter Base Voltage 5V IC Collector Current Continuous 800 mA PD Power Dissipation @Ta=25?C 500 mW Derate Above 25?C 2.28 mW/?C PD Power Dissipation @ Tc=25?C 1.2 W Derate Above 25?C 6.85 mW/?C Tj, Tstg -65 to +200 Operating and Storage Junction ?C Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION VALUE MIN MAX UNIT BVCEO IC=10mA,IB=0 Collector Emitter Breakdown Voltage 30 V BVCBO Collector Base Breakdown Voltage IC=10µA.IE=0 60 V BVEBOf Emitter Base Breakdown Voltage IE=10µA, IC=0 5

1.16. p2n2222_a.pdf Size:240K _cdil

2N222
2N222
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collector -Emitter Voltage VCEO 30 40 V Collector -Base Voltage VCBO 60 75 V Emitter -Base Voltage VEBO 5.0 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW 5 Derate Above 25deg C mW/deg C @ Tc=25 degC PD 1.5 W 12 Derate Above 25deg C mW/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2222 2222A UNIT Collector -Emitter

Otros transistores... 2N2218AS , 2N2218S , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , BC109C , 2N2220 , 2N2220A , 2N2221 , 2N2221A , 2N2221ACSM , 2N2221ADCSM , 2N2221CSM , 2N2221DCSM .

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