2SD1619R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1619R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5

Tensión colector-base (Ucb): 25

Tensión colector-emisor (Uce): 25

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 180

Capacitancia de salida (Cc), pF: 15

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SP0

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2SD1619R - PDF Hoja de especificaciones para ver o descargar

3.1. 2sd1619.pdf Size:122K _sanyo

oltage VBE(sat) IC=(�)500mA, IB=(�)50mA (�)0.85 (�)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 (�)25 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(�)10�A, IC=0 (�)5 V Output Capacitance Cob VCB=(�)10V, f=1MHz 15 pF (25) pF No.1785�2/3 2SB1119/2SD1619 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the

4.1. 2sd1618.pdf Size:176K _sanyo

)100mA, IB=(�)10mA (�)0.8 (�)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10?A, IE=0 (�)20 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)15 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(�)10?A, IC=0 (�)5 V Output Capacitance Cob VCB=(�)10V, f=1MHz 8 pF (13) pF No.1784�2/3 2SB1118/2SD1618 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in

4.2. 2sd1616.pdf Size:156K _nec

4.3. 2sd1614.pdf Size:214K _nec

4.4. 2sd1615.pdf Size:49K _nec

ECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 1.0 5.0 mA 4.5 mA 80 0.8 60 0.6 40 0.4 20 0.2 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 VCE � Collector to Emitter Voltage � V VCE(sat) � Collector Saturation Voltage � V COLLECTOR AND BASE SATURATION DC CURRENT GAIN vs. VOLTAGE vs. COLLECTOR CURRENT COLLECTOR CURRENT 1000 IC = 20�IB VCE = 2.0 V 2 500 1 200 0.5 100 0.2 50 0.1 20 0.05 10 0.02 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2

4.5. 2sd1616a.pdf Size:98K _nec

test publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. � No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. � NEC d

4.6. 2sd1615a.pdf Size:52K _nec

.0 0.1 0.5 0.05 0.02 0 40 80 120 160 200 TA � Ambient Temperature � �C 0.01 1 2 5 10 20 50 100 VCE � Collector to Emitter Voltage � V COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 1.0 5.0 mA 4.5 mA 80 0.8 60 0.6 40 0.4 20 0.2 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 VCE � Collector to Emitter Voltage � V VCE(sat) � Collector Saturation Voltage � V COLLECTOR AND BASE SATURATION DC CURRENT GAIN vs. VOLTAGE vs. COLLECTOR CURRE

4.7. 2sd1611.pdf Size:64K _panasonic

Collector current IC A Collector current IC A Collector to base voltage VCB V Area of safe operation (ASO) Rth(t) �t 100 103 (1) Without heat sink Non repetitive pulse (2) With a 50 ? 50 ? 2mm Al heat sink TC=25?C 30 (1) 102 ICP 10 t=10�s (2) IC 1ms 3 10 300ms 1 1 0.3 0.1 10�1 0.03 0.01 10�2 1 3 10 30 100 300 1000 10�4 10�3 10�2 10�1 1 10 102 103 104 ( ) ( ) Collector to emitter voltage VCE V Time t s 2 ( ) ( ) CE(sat) C ( ) C Collector current I A Collecto

4.8. 2sd1609_2sd1610.pdf Size:32K _hitachi

rrent IC (mA) 3 FE C Collector current I (mA) DC current transfer ratio h CE(sat) BE(sat) T Gain bandwidth product f (MHz) Base to emitter saturation voltage V (V) Collector to emitter saturation voltage V (V) C � 25 �25 Ta = 75 C � Ta = �25 75 75 25 C � Ta = �25 2SD1609, 2SD1610 Collector Output Capacitance vs. Collector to Base Voltage 50 f = 1 MHz 20 IE = 0 10 5 2 1.0 0.5 1 2 5 10 20 50 100 Collector to base voltage VCB (V) 4 ob Collector output ca

4.9. 2sd1616a.pdf Size:341K _secos

4.10. 2sd1616a.pdf Size:193K _lge

4.11. 2sd1616.pdf Size:1161K _wietron

Otros transistores... 2SD1616-L , 2SD1616-Y , 2SD1617 , 2SD1618 , 2SD1618E , 2SD1618S , 2SD1618U , 2SD1619 , BC517 , 2SD1619S , 2SD1619T , 2SD1619U , 2SD162 , 2SD1620 , 2SD1621 , 2SD1621R , 2SD1621S .