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Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SD1660 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1660

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 1.5

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: SOT33

Búsqueda de reemplazo de transistor bipolar 2SD1660

2SD1660 PDF doc:

4.1. 2sd1662.pdf Size:136K _toshiba

2SD1660
2SD1660
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-16C1A Equivalent Circuit Weight: 4.7 g (typ.) COLLECTOR BASE ? 2 k? ? 200 ? EMITTER 1 2003-02-04 2SD1662 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I

4.2. 2sd1666.pdf Size:30K _sanyo

2SD1660
2SD1660
Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ) : 2SB1133 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation P C Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg -40 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Colle

4.3. 2sd1668.pdf Size:104K _sanyo

2SD1660
2SD1660
Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1135 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Par

4.4. 2sd1667.pdf Size:136K _sanyo

2SD1660
2SD1660
Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit:mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1134 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()5 A Collector Current (Pulse) ICP ()9 A Collector Dissipation PC 2 W Mounted on ceramic board (250mm2? 0.8mm) 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol

4.5. 2sd1669.pdf Size:106K _sanyo

2SD1660
2SD1660
Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1136 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC 2 W Tc=25?C 30 W ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta

4.6. 2sd1664.pdf Size:118K _rohm

2SD1660
2SD1660
Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 251

4.7. 2sd1664.pdf Size:117K _utc

2SD1660
2SD1660
UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES 1 *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. SOT-89 Lead-free: 2SD1664L Halogen-free:2SD1664G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-025.C 2SD1664 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current DC 1 A IC Collector Current (Duty=1/2, PW=20ms) Pulse 2 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ +150 °C Stora

4.8. 2sd1664.pdf Size:118K _secos

2SD1660
2SD1660
2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM : 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM : 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 Collector-base voltage b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 V(BR)CBO : 40 V D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 Operating & Storage junction Temperature E 2.300 2.600 0.091 0.102 OO E1 3.940 4.250 0.155 0.167 Tj, Tstg : -55 C~ +150 C 1.500TYP e 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Symbol Test Conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO Ic= 50 A IE 40 =0 Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA IB=

4.9. 2sd1666.pdf Size:151K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC MAX 60 60 6 3 8 UNIT V V V A A Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -40~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.10. 2sd1668.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1135 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1668 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC MAX 60 50 6 7 12 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sd1667.pdf Size:173K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1134 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC MAX 60 50 6 5 9 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.12. 2sd1669.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1136 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1669 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60 50 6 12 15 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.13. 2sd1663.pdf Size:233K _inchange_semiconductor

2SD1660
2SD1660
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining

4.14. 2sd1664.pdf Size:749K _htsemi

2SD1660
2SD1660
2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 ?A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 ?A DC current gain hFE VCE=3V, IC=100mA 82 390 Collector-emitter saturation

4.15. 2sd1664_sot-89.pdf Size:268K _lge

2SD1660
2SD1660
2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-

4.16. 2sd1664.pdf Size:255K _wietron

2SD1660
2SD1660
2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150 ?C Tstg -55 to +150 Storage Temperature Range ?C ELECTRICAL CHARACTERISTICS(TA=25?C unless otherwise noted) Min Typ Parameter Symbol Max Unit Collector-Base Breakdown Voltage BVCBO 40 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 32 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=50µA, I =0 C ICBO - - 0.5 µA VCB=20V, IE=0 IEBO - - 0.5 µA VEB=4V, IC=0 WEITRON 1/5 11-Dec-08 http://www.weitron.com.tw 2SD1664 ELECTRICAL CHARACTERISTICS (TA=25?C Unless otherwise noted) C

Otros transistores... 2SD1653 , 2SD1654 , 2SD1655 , 2SD1656 , 2SD1657 , 2SD1658 , 2SD1659 , 2SD166 , BC109 , 2SD1661 , 2SD1662 , 2SD1663 , 2SD1664 , 2SD1665 , 2SD1666 , 2SD1666Q , 2SD1666R .

 

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