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2SD1660 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1660

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce):

Tensión emisor-base (Ueb):

Corriente del colector DC máxima (Ic): 1.5

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: SOT33

Búsqueda de reemplazo de transistor bipolar 2SD1660

2SD1660 PDF:

4.1. 2sd1662.pdf Size:136K _toshiba

2SD1660
2SD1660

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25C)

4.2. 2sd1666.pdf Size:30K _sanyo

2SD1660
2SD1660

Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1

4.3. 2sd1667.pdf Size:136K _sanyo

2SD1660
2SD1660

Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit:mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A. Micaless pac

4.4. 2sd1669.pdf Size:106K _sanyo

2SD1660
2SD1660

Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wid

4.5. 2sd1668.pdf Size:104K _sanyo

2SD1660
2SD1660

Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO leading to h

4.6. 2sd1664.pdf Size:118K _rohm

2SD1660
2SD1660

Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (Ta

4.7. 2sd1664.pdf Size:117K _utc

2SD1660
2SD1660

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES 1 *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. SOT-89 Lead-free: 2SD1664L Halogen-free:2SD1664G ORDERING INFORMATION Ordering Number Pin Assignment

4.8. 2sd1664.pdf Size:118K _secos

2SD1660
2SD1660

2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM : 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM : 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.02

4.9. 2sd1663.pdf Size:233K _inchange_semiconductor

2SD1660
2SD1660

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V V

4.10. 2sd1666.pdf Size:151K _inchange_semiconductor

2SD1660
2SD1660

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol

4.11. 2sd1667.pdf Size:173K _inchange_semiconductor

2SD1660
2SD1660

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1134 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DE

4.12. 2sd1669.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1136 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION

4.13. 2sd1668.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1135 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION

4.14. 2sd1664.pdf Size:749K _htsemi

2SD1660
2SD1660

2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

4.15. 2sd1664_sot-89.pdf Size:268K _lge

2SD1660
2SD1660

2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters)

4.16. 2sd1664.pdf Size:255K _wietron

2SD1660
2SD1660

2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collector Po

4.17. st2sd1664u.pdf Size:560K _semtech

2SD1660
2SD1660

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 ℃ Storage Te

4.18. 2sd1664.pdf Size:1280K _kexin

2SD1660
2SD1660

SMD Type Transistors NPN Transistors 2SD1664 1.70 0.1 Features Low VCE(sat) Compliments to 2SB1132 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) 1 A IC PW=20ms, duty=1/2 2 A Collector Power Di

4.19. 2sd1664.pdf Size:310K _shenzhen-tuofeng-semi

2SD1660
2SD1660

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V

Otros transistores... 2SD1653 , 2SD1654 , 2SD1655 , 2SD1656 , 2SD1657 , 2SD1658 , 2SD1659 , 2SD166 , BC109 , 2SD1661 , 2SD1662 , 2SD1663 , 2SD1664 , 2SD1665 , 2SD1666 , 2SD1666Q , 2SD1666R .

 


2SD1660
  2SD1660
  2SD1660
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