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100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SD1660 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1660

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 1.5

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: SOT33

Búsqueda de reemplazo de transistor bipolar 2SD1660

2SD1660 PDF doc:

4.1. 2sd1662.pdf Size:136K _toshiba

2SD1660
2SD1660
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-16C1A Equivalent Circuit Weight: 4.7 g (typ.) COLLECTOR BASE ? 2 k? ? 200 ? EMITTER 1 2003-02-04 2SD1662 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I

4.2. 2sd1669.pdf Size:106K _sanyo

2SD1660
2SD1660
Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1136 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC 2 W Tc=25?C 30 W ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta

4.3. 2sd1666.pdf Size:30K _sanyo

2SD1660
2SD1660
Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ) : 2SB1133 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation P C Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg -40 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Colle

4.4. 2sd1668.pdf Size:104K _sanyo

2SD1660
2SD1660
Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1135 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Par

4.5. 2sd1667.pdf Size:136K _sanyo

2SD1660
2SD1660
Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit:mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1134 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()5 A Collector Current (Pulse) ICP ()9 A Collector Dissipation PC 2 W Mounted on ceramic board (250mm2? 0.8mm) 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol

4.6. 2sd1664.pdf Size:118K _rohm

2SD1660
2SD1660
Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 251

4.7. 2sd1664.pdf Size:118K _secos

2SD1660
2SD1660
2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM : 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM : 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 Collector-base voltage b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 V(BR)CBO : 40 V D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 Operating & Storage junction Temperature E 2.300 2.600 0.091 0.102 OO E1 3.940 4.250 0.155 0.167 Tj, Tstg : -55 C~ +150 C 1.500TYP e 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Symbol Test Conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO Ic= 50 A IE 40 =0 Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA IB=

4.8. 2sd1669.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1136 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1669 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60 50 6 12 15 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.9. 2sd1666.pdf Size:151K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC MAX 60 60 6 3 8 UNIT V V V A A Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -40~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.10. 2sd1668.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1135 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1668 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC MAX 60 50 6 7 12 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sd1663.pdf Size:233K _inchange_semiconductor

2SD1660
2SD1660
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining

4.12. 2sd1667.pdf Size:173K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1134 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC MAX 60 50 6 5 9 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.13. 2sd1664.pdf Size:749K _htsemi

2SD1660
2SD1660
2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 ?A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 ?A DC current gain hFE VCE=3V, IC=100mA 82 390 Collector-emitter saturation

4.14. 2sd1664_sot-89.pdf Size:268K _lge

2SD1660
2SD1660
2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-

4.15. 2sd1664.pdf Size:255K _wietron

2SD1660
2SD1660
2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150 ?C Tstg -55 to +150 Storage Temperature Range ?C ELECTRICAL CHARACTERISTICS(TA=25?C unless otherwise noted) Min Typ Parameter Symbol Max Unit Collector-Base Breakdown Voltage BVCBO 40 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 32 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=50µA, I =0 C ICBO - - 0.5 µA VCB=20V, IE=0 IEBO - - 0.5 µA VEB=4V, IC=0 WEITRON 1/5 11-Dec-08 http://www.weitron.com.tw 2SD1664 ELECTRICAL CHARACTERISTICS (TA=25?C Unless otherwise noted) C

Otros transistores... 2SD1653 , 2SD1654 , 2SD1655 , 2SD1656 , 2SD1657 , 2SD1658 , 2SD1659 , 2SD166 , BC109 , 2SD1661 , 2SD1662 , 2SD1663 , 2SD1664 , 2SD1665 , 2SD1666 , 2SD1666Q , 2SD1666R .

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