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Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SD1660 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1660

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 1.5

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: SOT33

Búsqueda de reemplazo de transistor bipolar 2SD1660

2SD1660 PDF doc:

4.1. 2sd1662.pdf Size:136K _toshiba

2SD1660
2SD1660
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-16C1A Equivalent Circuit Weight: 4.7 g (typ.) COLLECTOR BASE ? 2 k? ? 200 ? EMITTER 1 2003-02-04 2SD1662 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I

4.2. 2sd1666.pdf Size:30K _sanyo

2SD1660
2SD1660
Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ) : 2SB1133 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation P C Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg -40 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Colle

4.3. 2sd1668.pdf Size:104K _sanyo

2SD1660
2SD1660
Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1135 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Par

4.4. 2sd1667.pdf Size:136K _sanyo

2SD1660
2SD1660
Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit:mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1134 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()5 A Collector Current (Pulse) ICP ()9 A Collector Dissipation PC 2 W Mounted on ceramic board (250mm2? 0.8mm) 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol

4.5. 2sd1669.pdf Size:106K _sanyo

2SD1660
2SD1660
Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1136 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC 2 W Tc=25?C 30 W ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta

4.6. 2sd1664.pdf Size:118K _rohm

2SD1660
2SD1660
Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 251

4.7. 2sd1664.pdf Size:117K _utc

2SD1660
2SD1660
UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES 1 *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. SOT-89 Lead-free: 2SD1664L Halogen-free:2SD1664G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-025.C 2SD1664 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current DC 1 A IC Collector Current (Duty=1/2, PW=20ms) Pulse 2 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ +150 °C Stora

4.8. 2sd1664.pdf Size:118K _secos

2SD1660
2SD1660
2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM : 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM : 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 Collector-base voltage b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 V(BR)CBO : 40 V D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 Operating & Storage junction Temperature E 2.300 2.600 0.091 0.102 OO E1 3.940 4.250 0.155 0.167 Tj, Tstg : -55 C~ +150 C 1.500TYP e 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Symbol Test Conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO Ic= 50 A IE 40 =0 Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA IB=

4.9. 2sd1666.pdf Size:151K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC MAX 60 60 6 3 8 UNIT V V V A A Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -40~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.10. 2sd1668.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1135 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1668 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC MAX 60 50 6 7 12 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sd1667.pdf Size:173K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1134 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC MAX 60 50 6 5 9 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.12. 2sd1669.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1136 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1669 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60 50 6 12 15 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.13. 2sd1663.pdf Size:233K _inchange_semiconductor

2SD1660
2SD1660
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining

4.14. 2sd1664.pdf Size:749K _htsemi

2SD1660
2SD1660
2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 ?A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 ?A DC current gain hFE VCE=3V, IC=100mA 82 390 Collector-emitter saturation

4.15. 2sd1664_sot-89.pdf Size:268K _lge

2SD1660
2SD1660
2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-

4.16. 2sd1664.pdf Size:255K _wietron

2SD1660
2SD1660
2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150 ?C Tstg -55 to +150 Storage Temperature Range ?C ELECTRICAL CHARACTERISTICS(TA=25?C unless otherwise noted) Min Typ Parameter Symbol Max Unit Collector-Base Breakdown Voltage BVCBO 40 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 32 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=50µA, I =0 C ICBO - - 0.5 µA VCB=20V, IE=0 IEBO - - 0.5 µA VEB=4V, IC=0 WEITRON 1/5 11-Dec-08 http://www.weitron.com.tw 2SD1664 ELECTRICAL CHARACTERISTICS (TA=25?C Unless otherwise noted) C

Otros transistores... 2SD1653 , 2SD1654 , 2SD1655 , 2SD1656 , 2SD1657 , 2SD1658 , 2SD1659 , 2SD166 , BC109 , 2SD1661 , 2SD1662 , 2SD1663 , 2SD1664 , 2SD1665 , 2SD1666 , 2SD1666Q , 2SD1666R .

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