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Liste
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SD1660 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1660

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 1.5

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10000

Empaquetado / Estuche: SOT33

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2SD1660 PDF doc:

4.1. 2sd1662.pdf Size:136K _toshiba

2SD1660
2SD1660
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-16C1A Equivalent Circuit Weight: 4.7 g (typ.) COLLECTOR BASE ? 2 k? ? 200 ? EMITTER 1 2003-02-04 2SD1662 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I

4.2. 2sd1666.pdf Size:30K _sanyo

2SD1660
2SD1660
Ordering number : ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit : mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter ( ) : 2SB1133 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)60 V Collector-to-Emitter Voltage VCEO (-)60 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)3 A Collector Current (Pulse) ICP (-)8 A 2 W Collector Dissipation P C Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg -40 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Colle

4.3. 2sd1667.pdf Size:136K _sanyo

2SD1660
2SD1660
Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit:mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1134 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()5 A Collector Current (Pulse) ICP ()9 A Collector Dissipation PC 2 W Mounted on ceramic board (250mm2? 0.8mm) 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol

4.4. 2sd1669.pdf Size:106K _sanyo

2SD1660
2SD1660
Ordering number:2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1136 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()12 A Collector Current (Pulse) ICP ()15 A Collector Dissipation PC 2 W Tc=25?C 30 W ?C Junction Temperature Tj 150 Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta

4.5. 2sd1668.pdf Size:104K _sanyo

2SD1660
2SD1660
Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO leading to high resistance to breakdown. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter ( ) : 2SB1135 SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()12 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Par

4.6. 2sd1664.pdf Size:118K _rohm

2SD1660
2SD1660
Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : FElectrical characteristic curves 250 Transistors 2SD1664 / 2SD1858 251

4.7. 2sd1664.pdf Size:117K _utc

2SD1660
2SD1660
UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES 1 *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. SOT-89 Lead-free: 2SD1664L Halogen-free:2SD1664G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3 2SD1664-x-AB3-R 2SD1664L-x-AB3-R 2SD1664G-x-AB3-R SOT-89 B C E Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R208-025.C 2SD1664 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current DC 1 A IC Collector Current (Duty=1/2, PW=20ms) Pulse 2 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ +150 °C Stora

4.8. 2sd1664.pdf Size:118K _secos

2SD1660
2SD1660
2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM : 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM : 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 Collector-base voltage b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 V(BR)CBO : 40 V D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 Operating & Storage junction Temperature E 2.300 2.600 0.091 0.102 OO E1 3.940 4.250 0.155 0.167 Tj, Tstg : -55 C~ +150 C 1.500TYP e 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 O Electrical Characteristics( Tamb=25 C unless otherwise specified) Parameter Symbol Test Conditions MIN TYP MAX UNIT V Collector-base breakdown voltage V(BR)CBO Ic= 50 A IE 40 =0 Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA IB=

4.9. 2sd1663.pdf Size:233K _inchange_semiconductor

2SD1660
2SD1660
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.7 V IC Collector Current-Continuous 5 A IBB Base Current-Continuous 3 A Collector Power Dissipation PC @ TC=25? 80 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1663 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining

4.10. 2sd1666.pdf Size:151K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1133 Ў¤ High reliability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base Open emitter OND IC CONDITIONS TOR UC MAX 60 60 6 3 8 UNIT V V V A A Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -40~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.11. 2sd1667.pdf Size:173K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1134 Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Collector current Collector-base voltage Collector-emitter voltage E SEM NG Open base OND IC CONDITIONS TOR UC MAX 60 50 6 5 9 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current-peak Ta=25Ўж 2 W 25 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.12. 2sd1669.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1136 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1669 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 60 50 6 12 15 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.13. 2sd1668.pdf Size:122K _inchange_semiconductor

2SD1660
2SD1660
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SB1135 Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ For relay drivers,high-speed inverters, converters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1668 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC MAX 60 50 6 7 12 UNIT V V V A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Ta=25Ўж 2 W 30 150 -55~150 Ўж Ўж PC Collector dissipation TC=25Ўж Tj Tstg Junction temperature Storage temperature

4.14. 2sd1664.pdf Size:749K _htsemi

2SD1660
2SD1660
2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 ?A Emitter cut-off current IEBO VEB=4V, IC=0 0.5 ?A DC current gain hFE VCE=3V, IC=100mA 82 390 Collector-emitter saturation

4.15. 2sd1664_sot-89.pdf Size:268K _lge

2SD1660
2SD1660
2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50?A, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50?A, IC =0 5 V Collector cut-

4.16. 2sd1664.pdf Size:255K _wietron

2SD1660
2SD1660
2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collector Power Dissipation PD 0.5 W Tj Junction Temperature -55 to +150 ?C Tstg -55 to +150 Storage Temperature Range ?C ELECTRICAL CHARACTERISTICS(TA=25?C unless otherwise noted) Min Typ Parameter Symbol Max Unit Collector-Base Breakdown Voltage BVCBO 40 - - V IC=50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 32 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=50µA, I =0 C ICBO - - 0.5 µA VCB=20V, IE=0 IEBO - - 0.5 µA VEB=4V, IC=0 WEITRON 1/5 11-Dec-08 http://www.weitron.com.tw 2SD1664 ELECTRICAL CHARACTERISTICS (TA=25?C Unless otherwise noted) C

4.17. st2sd1664u.pdf Size:560K _semtech

2SD1660
2SD1660
ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 ℃ Storage Temperature Range TStg - 55 to + 150 ℃ 1) Single pulse, PW = 100 ms. 2) When mounted on a 40 X 40 X 0.7 mm ceramic board. Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 3 V, IC = 100 mA Current Gain Group P hFE 82 - 180 - Q hFE 120 - 270 - R hFE 180 - 390 - Collector Base Breakdown Voltage V(BR)CBO 40 - - V at IC = 50 µA Collector Emitter Breakdown Voltage V(BR)CEO 32 - - V at IC = 1 mA Emitter Base Breakdown Voltage V(BR)EBO 5 - - V at IE = 50 µA Collector Cutoff Current ICBO - - 0.5 µA at VCB = 20 V

4.18. 2sd1664.pdf Size:310K _shenzhen-tuofeng-semi

2SD1660
2SD1660
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector power dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC =0 5 V Collector cut-off current ICBO VCB=20V, IE=0 0.5 μA Emitter cut-off

Otros transistores... 2SD1653 , 2SD1654 , 2SD1655 , 2SD1656 , 2SD1657 , 2SD1658 , 2SD1659 , 2SD166 , BC109 , 2SD1661 , 2SD1662 , 2SD1663 , 2SD1664 , 2SD1665 , 2SD1666 , 2SD1666Q , 2SD1666R .

 

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