Todos los transistores


Introduzca al menos 3 números o letras
 
BC177C
  BC177C
  BC177C
 
BC177C
  BC177C
  BC177C
 
BC177C
  BC177C
 
 
Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU433
BU4508AF .. BUL50B
BUL510 .. BUV18X
BUV19 .. BUX62
BUX63 .. C5T4997
C5T5400 .. CDQ10053
CDQ10054 .. CIL769
CIL771 .. CMMT495
CMMT551 .. CS718A
CS720A .. CSB772E
CSB772P .. CSD1047OF
CSD1047YF .. CZD1952
CZD2983 .. D38L4
D38L4-6 .. D44TD3
D44TD4 .. DC5441
DC5442 .. DTA114YCA
DTA114YE .. DTC124XCA
DTC124XE .. DW7039
DW7050 .. ECG324
ECG325 .. ERS275
ERS301 .. F121
F121A .. FJP3305
FJP3307D .. FMMT4250
FMMT4250A .. FT2384
FT2551 .. FZTA14
FZTA42 .. GES3962
GES4058 .. GFT25R
GFT31 .. GT250/8C
GT250/8D .. HA7207
HA7501 .. HMBTH10
HMJE13001 .. HUN2237
HUN2238 .. JC501P
JC501Q .. KDY24
KDY25 .. KRA721E
KRA721F .. KRC651U
KRC652E .. KSA1625L
KSA1625M .. KSC2334-Y
KSC2335 .. KSD1588-O
KSD1588-R .. KSR1011
KSR1012 .. KT3140V
KT3142A .. KT603D
KT603E .. KT8110V
KT8112A .. KT838B
KT839A .. KTA1517
KTA1517S .. KTC5001L
KTC5027 .. MA0491
MA0492 .. ME8002
ME8003 .. MJ480
MJ481 .. MJE3312
MJE3370 .. MM3725
MM3726 .. MMBT4141
MMBT4142 .. MMUN2113LT1
MMUN2113LT2 .. MP3638
MP3638A .. MPQ4888
MPQ4889 .. MPS6602
MPS6651 .. MRF243
MRF244 .. MUN5311DW
MUN5311DW1 .. NA42WG
NA42WH .. NB121F
NB121FH .. NB312Z
NB313E .. NPS3564
NPS3565 .. NSS12100UW
NSS12100XV6T1G .. OC410
OC41N .. PBSS301ND
PBSS301NX .. PDTC144VU
PDTC144WE .. PN3725
PN3742 .. PZT195A
PZT2222A .. RN1113CT
RN1113FS .. RN2118MFV
RN2119MFV .. RS-2013
RS1049 .. SCE540
SCH2202 .. SFT317
SFT319 .. SQ2222A
SQ2222AF .. ST5771-2
ST6008 .. SUR539J
SUR540EF .. T2580
T2588 .. TI459
TI460 .. TIP642
TIP645 .. TN2907
TN2907A .. TP3827
TP3866 .. UMB1N
UMB2N .. UN6113
UN6114 .. ZDT694
ZDT749 .. ZTX321M
ZTX322 .. ZXTN2010A
ZXTN2010G .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BC177C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC177C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3

Tensión colector-base (Ucb): 45

Tensión colector-emisor (Uce): 45

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 7

Ganancia de corriente contínua (hfe): 380

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar BC177C

BC177C PDF doc:

5.1. bc177_cnv_3.pdf Size:49K _philips

BC177C
BC177C
DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor 1997 Jun 04 Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case General purpose switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 C - 300 mW hFE DC current gain IC = -2 mA; VCE = -5 V 125 500 fT transition frequ

5.2. bc177.pdf Size:49K _philips

BC177C
BC177C
DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor 1997 Jun 04 Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case General purpose switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 C - 300 mW hFE DC current gain IC = -2 mA; VCE = -5 V 125 500 fT transition frequ

5.3. bc177-bc178-bc179.pdf Size:86K _st

BC177C
BC177C
BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BC177 BC178 BC179 VCES Collector-emitter Voltage (VBE = 0) 50 30 25 V VCEO Collector-emitter Voltage (IB = 0) 45 25 20 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 100 mA ICM Collector Peak Current 200 mA Pto t Total Power Dissipation at T ? 25 C300 mW amb Tstg Storage Temperature 65 to 175 C T Junction Temperature 175 C j January 1989 1/6 BC177-BC178-B179 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 200 C/W Rth j-amb Thermal Resistance Junction-am

5.4. bc177_bc178_bc179.pdf Size:269K _siemens

BC177C
BC177C

5.5. bc177-a-b.pdf Size:70K _comset

BC177C
BC177C
PNP BC177,A,B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,A,B are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB =0) BC177 -45 V VCBO Collector-Base Voltage (IE =0) BC177 -50 V VEBO Emitter-Base Voltage (IC =0) BC177 -5 V IC Collector Current BC177 -100 mA ICM Collector Peak Current BC177 -200 mA IBM Base Peak Current BC177 -200 mA PD Total Power Dissipation @ Tamb = 25 BC177 300 mW TJ Junction Temperature BC177 175 C TStg Storage Temperature range BC177 -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to mounting base BC177 500 C/W RthJ-c Thermal Resistance, Junction to ambient in free

5.6. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

BC177C
BC177C

5.7. bc177_bc178_bc179_a_b_.pdf Size:89K _cdil

BC177C
BC177C
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC177 BC178 BC179 UNIT Collector -Emitter Voltage VCEO 45 25 20 V Collector -Emitter Voltage VCES 50 30 25 V Collector -Base Voltage VCBO 50 30 25 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current Continuous IC 0.2 A Power Dissipation@ Ta=25 degC PD 0.6 W Derate Above 25 deg C 2.28 mW/deg C Power Dissipation@ Tc=25 degC PD 1.0 W Derate Above 25 deg C 6.67 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Cut off Current ICES VCE=20V, IE=0 - 100 nA Tamb=125 deg C VCE=20V, IE=0 - 4.0 uA Collector -Base Voltag

5.8. bc177_bc178_bc179_bc257_bc258_bc259_bc307_bc308_bc309_bc320_bc321_bc322.pdf Size:225K _microelectronics

BC177C
BC177C

Otros transistores... BC174A , BC174B , BC175 , BC177 , BC177A , BC177AP , BC177B , BC177BP , 2SC945 , BC177P , BC177V , BC177VI , BC178 , BC178A , BC178AP , BC178B , BC178BP .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com