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BC177C
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BC177C
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2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
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2SC5824 .. 2SC692
2SC692M .. 2SC901
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2SD1450 .. 2SD1667S
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40853 .. A748
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BFY87G .. BLY17C
BLY20 .. BSS99
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BU213 .. BUF410
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BUY82 .. CD9013DEF
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CTP1104 .. D29J4
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KT644B .. KT817G
KT817G2 .. KT914A
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KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BC177C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC177C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3

Tensión colector-base (Ucb): 45

Tensión colector-emisor (Uce): 45

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 7

Ganancia de corriente contínua (hfe): 380

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar BC177C

BC177C PDF doc:

5.1. bc177_cnv_3.pdf Size:49K _philips

BC177C
BC177C
DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor 1997 Jun 04 Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case General purpose switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 C - 300 mW hFE DC current gain IC = -2 mA; VCE = -5 V 125 500 fT transition frequ

5.2. bc177.pdf Size:49K _philips

BC177C
BC177C
DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor 1997 Jun 04 Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to the case General purpose switching and amplification. DESCRIPTION 3 1 handbook, halfpage 2 PNP transistor in a TO-18; SOT18 metal package. NPN complement: BC107. 2 3 MAM263 1 Fig.1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --50 V VCEO collector-emitter voltage open base --45 V ICM peak collector current --200 mA Ptot total power dissipation Tamb ? 25 C - 300 mW hFE DC current gain IC = -2 mA; VCE = -5 V 125 500 fT transition frequ

5.3. bc177-bc178-bc179.pdf Size:86K _st

BC177C
BC177C
BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BC177 BC178 BC179 VCES Collector-emitter Voltage (VBE = 0) 50 30 25 V VCEO Collector-emitter Voltage (IB = 0) 45 25 20 V VEBO Emitter-base Voltage (IC =0) 5 V IC Collector Current 100 mA ICM Collector Peak Current 200 mA Pto t Total Power Dissipation at T ? 25 C300 mW amb Tstg Storage Temperature 65 to 175 C T Junction Temperature 175 C j January 1989 1/6 BC177-BC178-B179 THERMAL DATA Rth j-case Thermal Resistance Junction-case Max 200 C/W Rth j-amb Thermal Resistance Junction-am

5.4. bc177_bc178_bc179.pdf Size:269K _siemens

BC177C
BC177C

5.5. bc177-a-b.pdf Size:70K _comset

BC177C
BC177C
PNP BC177,A,B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,A,B are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (IB =0) BC177 -45 V VCBO Collector-Base Voltage (IE =0) BC177 -50 V VEBO Emitter-Base Voltage (IC =0) BC177 -5 V IC Collector Current BC177 -100 mA ICM Collector Peak Current BC177 -200 mA IBM Base Peak Current BC177 -200 mA PD Total Power Dissipation @ Tamb = 25 BC177 300 mW TJ Junction Temperature BC177 175 C TStg Storage Temperature range BC177 -65 to +150 C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to mounting base BC177 500 C/W RthJ-c Thermal Resistance, Junction to ambient in free

5.6. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

BC177C
BC177C

5.7. bc177_bc178_bc179_a_b_.pdf Size:89K _cdil

BC177C
BC177C
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC177 BC178 BC179 UNIT Collector -Emitter Voltage VCEO 45 25 20 V Collector -Emitter Voltage VCES 50 30 25 V Collector -Base Voltage VCBO 50 30 25 V Emitter -Base Voltage VEBO 5.0 5.0 5.0 V Collector Current Continuous IC 0.2 A Power Dissipation@ Ta=25 degC PD 0.6 W Derate Above 25 deg C 2.28 mW/deg C Power Dissipation@ Tc=25 degC PD 1.0 W Derate Above 25 deg C 6.67 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 175 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector-Cut off Current ICES VCE=20V, IE=0 - 100 nA Tamb=125 deg C VCE=20V, IE=0 - 4.0 uA Collector -Base Voltag

5.8. bc177_bc178_bc179_bc257_bc258_bc259_bc307_bc308_bc309_bc320_bc321_bc322.pdf Size:225K _microelectronics

BC177C
BC177C

Otros transistores... BC174A , BC174B , BC175 , BC177 , BC177A , BC177AP , BC177B , BC177BP , 2SC945 , BC177P , BC177V , BC177VI , BC178 , BC178A , BC178AP , BC178B , BC178BP .

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