BC637-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC637-10

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 60

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 130

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 63

Empaquetado / Estuche: TO92

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BC637-10 - PDF Hoja de especificaciones para ver o descargar

5.1. bc635_bc637_bc639.pdf Size:116K _motorola

PD TC 25�C 100 20 10 50 5 BC635 PD TA 25�C BC637 2 PD TC 25�C BC639 1 20 1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000 VCE, COLLECTOR�EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain 500 1 300 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 VCE = 2 V 100 0.4 50 0.2 VCE(sat) @ IC/IB = 10 20 0 1 10 100 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

5.2. bc635_bc637_bc639_3.pdf Size:49K _philips

V hFE 120 80 40 0 10-1 1 10 102 103 IC (mA) Fig.2 DC current gain; typIcal values. 1999 Apr 23 4 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) 5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5 mm 2.54 1.27 2.5 5.0 0.40 0.56 0

5.3. bc637_bcp55_bcx55.pdf Size:153K _philips

BC637_BCP55_BCX55_7 � NXP B.V. 2007. All rights reserved. Product data sheet Rev. 07 � 25 June 2007 3 of 15 BC637; BCP55; BCX55 NXP Semiconductors 60 V, 1 A NPN medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 60 V VEBO emitter-base voltage open collector - 5 V IC col

5.4. bc635_bc637_bc639.pdf Size:47K _philips

2 V hFE 120 80 40 0 10-1 1 10 102 103 IC (mA) Fig.2 DC current gain; typical values. 2001 Oct 10 4 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) 5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5 mm 2.54 1.27 2.5 5.0 0.40 0.56

5.5. bc635_bc637_bc639.pdf Size:55K _fairchild_semi

002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BC635/637/639 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx� FACT� ImpliedDisconnect� PACMAN� SPM� ActiveArray� FACT Quiet series� ISOPLANAR� POP� Stealth� Bottomless� FAST� LittleFET� Power247� SuperSOT�-3 CoolFET� FASTr� MicroFET� PowerTrench� SuperSOT�-6 CROSSVOLT� FRFET� Mi

5.6. bc637_bc639_bc63916.pdf Size:92K _onsemi

(IC = 5.0 mAdc, VCE = 2.0 Vdc) 25 - - (IC = 150 mAdc, VCE = 2.0 Vdc) BC637 40 - 160 BC639 40 - 160 BC639-16ZLT1 100 - 250 (IC = 500 mA, VCE = 2.0 V) 25 - - Collector - Emitter Saturation Voltage VCE(sat) Vdc (IC = 500 mAdc, IB = 50 mAdc) - - 0.5 Base - Emitter On Voltage VBE(on) Vdc (IC = 500 mAdc, VCE = 2.0 Vdc) - - 1.0 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) - 200 - Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0

5.7. bc637.pdf Size:28K _kec

Otros transistores... BC635-10 , BC635-16 , BC635-6 , BC636 , BC636-10 , BC636-16 , BC636-6 , BC637 , 2N5133 , BC637-6 , BC638 , BC638-10 , BC638-6 , BC639 , BC639-10 , BC639-6 , BC640 .