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BC639
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BC639
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BC639
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BC639 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC639

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 80

Tensión colector-emisor (Uce): 80

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar BC639

BC639 PDF doc:

1.1. bc635_bc637_bc639.pdf Size:116K _motorola

BC639
BC639
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 2904, STYLE 14 TO92 (TO226AA) CollectorEmitter Voltage VCEO 45 60 80 Vdc CollectorBase Voltage VCBO 45 60 80 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1)

1.2. bc635_bc637_bc639.pdf Size:47K _philips

BC639
BC639
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements: BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-emitter voltage open base BC635 - 45 V BC637 - 60 V BC639 - 80 V VEBO emitter-base voltage open collector

1.3. bc635_bc637_bc639_3.pdf Size:49K _philips

BC639
BC639
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements: BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-emitter voltage open base BC635 - 45 V BC637 - 60 V BC639 - 80 V VEBO emitter-base voltage open collector -

1.4. bc639_bcp56_bcx56.pdf Size:153K _philips

BC639
BC639
BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC639[2] SOT54 SC-43A TO-92 BC640 BCP56 SOT223 SC-73 - BCP53 BCX56 SOT89 SC-62 TO-243 BCX53 [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Two current gain selections High power dissipation capability 1.3 Applications Linear voltage regulators Low-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 1 A ICM peak collector current single pulse; tp ? 1 ms - - 1.5 A hFE DC current gain VCE =2V; IC = 150 mA 63 - 250 hFE selection -10 VCE =2V;

1.5. bc635_bc637_bc639.pdf Size:55K _fairchild_semi

BC639
BC639
BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? : BC635 45 V : BC637 60 V : BC639 100 V VCES Collector-Emitter Voltage : BC635 45 V : BC637 60 V : BC639 100 V VCEO Collector-Emitter Voltage : BC635 45 V : BC637 60 V : BC639 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC635 45 V : BC637 60 V : BC639 80 V ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 A

1.6. bc63916.pdf Size:56K _fairchild_semi

BC639
BC639
BC63916 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? 100 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100A, IE = 0 100 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 5.0 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 A hFE1 DC Current Gain VCE = 2V, IC = 5mA 25 hFE2 VCE = 2

1.7. bc637_bc639_bc63916.pdf Size:92K _onsemi

BC639
BC639
BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-92 Total Device Dissipation @ TA = 25C PD 625 mW CASE 29 Derate above 25C 5.0 mW/C STYLE 14 Total Device Dissipation @ TC = 25C PD 800 mW 1 Derate above 25C 12 mW/C 1 2 2 3 3 Operating and Storage Junction TJ, Tstg -55 to +150 C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W MARKING DIAGRAMS Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings o

1.8. bc635_bc636_bc637_bc638_bc639_bc640.pdf Size:115K _cdil

BC639
BC639
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO Collector Emitter Voltage 45 60 80 V VCBO Collector Base Voltage 45 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Total Device Dissipation at Ta=25?C PD 800 mW Derate Above 25?C 6.4 mW/?C Total Device Dissipation at Ta=25?C **PD 1.0 W Total Device Dissipation at Tc=25?C PD 2.75 W Derate Above 25?C 22 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 45 ?C/W Rth (j-a) Junction to Ambient in free air 156 ?C/W **Rth (j-a) Junction to Ambient 125 ?C/W ELECTRICAL CHARACTER

Otros transistores... BC636-16 , BC636-6 , BC637 , BC637-10 , BC637-6 , BC638 , BC638-10 , BC638-6 , S9018 , BC639-10 , BC639-6 , BC640 , BC640-10 , BC640-6 , BC650 , BC650C , BC650CS .

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