Todos los transistores


Introduzca al menos 3 números o letras
 
BC639
  BC639
  BC639
 
BC639
  BC639
  BC639
 
BC639
  BC639
 
 
Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BU104
BU104D .. BU921ZP
BU921ZPFI .. BUP49
BUP50 .. BUW131
BUW131A .. BUY30
BUY32-100 .. CCS2008GF
CCS2053 .. CG040D
CG040E .. CK477
CK4A .. CP500
CP501 .. CSA1316GR
CSA1357 .. CSC1740
CSC1740S .. CSD786Q
CSD786R .. D26E1
D26E2 .. D40N2
D40N3 .. D60T4040
D60T4050 .. DSL12AW
DSS20200L .. DTA143ZE
DTA143ZEA .. DTD123YK
DTD143E .. ECG16
ECG160 .. ECG52
ECG53 .. ESM4007
ESM400A .. FCX1051A
FCX1053A .. FJY4004R
FJY4005R .. FMMT918R
FMMT929 .. FX3502
FX3503 .. GD110
GD114 .. GES5818
GES5819 .. GS111B
GS111C .. GT376A
GT383A .. HE9015
HEP637 .. HS5819
HS5820 .. IDI8003
IDI8004 .. JE9112A
JE9112B .. KRA105M
KRA105S .. KRA769E
KRA769U .. KRC841E
KRC841T .. KSB1116A-Y
KSB1116S .. KSC2883-O
KSC2883-Y .. KSD5076
KSD5078 .. KSY82
KT104A .. KT325BM
KT325V .. KT617A
KT618A .. KT8154A
KT8154B .. KT903B
KT904A .. KTB688B
KTB764 .. KTD8303A9
KTD863 .. MCH3105
MCH3106 .. MJ10100
MJ10101 .. MJD44H11-1
MJD44H11T4 .. MJE5982
MJE5983 .. MMBC1009F1
MMBC1009F2 .. MMBT6428
MMBT6428L .. MP115
MP116 .. MP5130
MP5131 .. MPS3391
MPS3391A .. MPSH24
MPSH30 .. MRF947AT3
MRF947BT1 .. NA12FG
NA12FH .. NB013HU
NB013HV .. NB212XH
NB212XI .. NKT13429
NKT135 .. NPS5449
NPS5550 .. NTE22
NTE226 .. OC822
OC823 .. PBSS5320T
PBSS5320X .. PMBT2369
PMBT2907 .. PRF949
PRF957 .. RCA1A18
RCA1A19 .. RN1701JE
RN1702 .. RN2901FS
RN2902 .. S17900
S1805 .. SDT9305
SDT9306 .. SJ5439
SJE1349 .. SRA2219S
SRA2219SF .. STC5608
STC5648 .. SZD4672
SZD5103 .. TA2514
TA2551 .. TIP146
TIP146F .. TIS53
TIS54 .. TN4142
TN4143 .. TPC6602
TPC6603 .. UN1115S
UN1116Q .. UN921M
UNR1110 .. ZT61
ZT62 .. ZTX453
ZTX454 .. ZXTPS718MC
ZXTPS720MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BC639 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC639

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1

Tensión colector-base (Ucb): 80

Tensión colector-emisor (Uce): 80

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar BC639

BC639 PDF doc:

1.1. bc635_bc637_bc639.pdf Size:116K _motorola

BC639
BC639
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC635/D High Current Transistors BC635 NPN Silicon BC637 BC639 COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 635 637 639 Rating Symbol Unit CASE 2904, STYLE 14 TO92 (TO226AA) CollectorEmitter Voltage VCEO 45 60 80 Vdc CollectorBase Voltage VCBO 45 60 80 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1)

1.2. bc635_bc637_bc639_3.pdf Size:49K _philips

BC639
BC639
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements: BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-emitter voltage open base BC635 - 45 V BC637 - 60 V BC639 - 80 V VEBO emitter-base voltage open collector -

1.3. bc639_bcp56_bcx56.pdf Size:153K _philips

BC639
BC639
BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC639[2] SOT54 SC-43A TO-92 BC640 BCP56 SOT223 SC-73 - BCP53 BCX56 SOT89 SC-62 TO-243 BCX53 [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features High current Two current gain selections High power dissipation capability 1.3 Applications Linear voltage regulators Low-side switches MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 1 A ICM peak collector current single pulse; tp ? 1 ms - - 1.5 A hFE DC current gain VCE =2V; IC = 150 mA 63 - 250 hFE selection -10 VCE =2V;

1.4. bc635_bc637_bc639.pdf Size:47K _philips

BC639
BC639
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification 2001 Oct 10 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements: BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-emitter voltage open base BC635 - 45 V BC637 - 60 V BC639 - 80 V VEBO emitter-base voltage open collector

1.5. bc63916.pdf Size:56K _fairchild_semi

BC639
BC639
BC63916 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? 100 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100A, IE = 0 100 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 80 V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 5.0 V ICBO Collector Cut-off Current VCB = 30V, IE = 0 100 nA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 10 A hFE1 DC Current Gain VCE = 2V, IC = 5mA 25 hFE2 VCE = 2

1.6. bc635_bc637_bc639.pdf Size:55K _fairchild_semi

BC639
BC639
BC635/637/639 Switching and Amplifier Applications Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCER Collector-Emitter Voltage at RBE=1K? : BC635 45 V : BC637 60 V : BC639 100 V VCES Collector-Emitter Voltage : BC635 45 V : BC637 60 V : BC639 100 V VCEO Collector-Emitter Voltage : BC635 45 V : BC637 60 V : BC639 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A ICP Peak Collector Current 1.5 A IB Base Current 100 mA PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C PW=5ms, Duty Cycle=10% Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 : BC635 45 V : BC637 60 V : BC639 80 V ICBO Collector Cut-off Current VCB=30V, IE=0 0.1 A

1.7. bc637_bc639_bc63916.pdf Size:92K _onsemi

BC639
BC639
BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS 3 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc BC637 60 1 BC639 80 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current - Continuous IC 1.0 Adc TO-92 Total Device Dissipation @ TA = 25C PD 625 mW CASE 29 Derate above 25C 5.0 mW/C STYLE 14 Total Device Dissipation @ TC = 25C PD 800 mW 1 Derate above 25C 12 mW/C 1 2 2 3 3 Operating and Storage Junction TJ, Tstg -55 to +150 C STRAIGHT LEAD BENT LEAD Temperature Range BULK PACK TAPE & REEL AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W MARKING DIAGRAMS Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings o

1.8. bc635_bc636_bc637_bc638_bc639_bc640.pdf Size:115K _cdil

BC639
BC639
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) BC635 BC637 BC639 DESCRIPTION SYMBOL BC636 BC638 BC640 UNIT VCEO Collector Emitter Voltage 45 60 80 V VCBO Collector Base Voltage 45 60 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 1.0 A Total Device Dissipation at Ta=25?C PD 800 mW Derate Above 25?C 6.4 mW/?C Total Device Dissipation at Ta=25?C **PD 1.0 W Total Device Dissipation at Tc=25?C PD 2.75 W Derate Above 25?C 22 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-c) Junction to Case 45 ?C/W Rth (j-a) Junction to Ambient in free air 156 ?C/W **Rth (j-a) Junction to Ambient 125 ?C/W ELECTRICAL CHARACTER

Otros transistores... BC636-16 , BC636-6 , BC637 , BC637-10 , BC637-6 , BC638 , BC638-10 , BC638-6 , S9018 , BC639-10 , BC639-6 , BC640 , BC640-10 , BC640-6 , BC650 , BC650C , BC650CS .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com