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BC860CW
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: BC860CW
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
Tensión colector-base (Ucb): 50
Tensión colector-emisor (Uce): 45
Tensión emisor-base (Ueb): 5
Corriente del colector DC máxima (Ic): 0.1
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 250
Capacitancia de salida (Cc), pF: 3
Ganancia de corriente contínua (hfe): 420
Empaquetado / Estuche: SOT323
Búsqueda de reemplazo de transistor bipolar BC860CW
BC860CW
- PDF Hoja de especificaciones para ver o descargar
5.1. bc859w_bc860w.pdf  Size:122K _philips  |
 | 5 V - - 820 mV
Cc collector capacitance IE = ie = 0; VCB = -10 V; f = 1 MHz - - 5 pF
Ce emitter capacitance IC = ic = 0; VEB = -500 mV; f = 1 MHz - 10 - pF
fT transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
F noise figure; IC = -200 ?A; VCE = -5 V; RS = 2 k?; - - 4 dB
BC859W; BC860W; f = 10 Hz to 15.7 kHz
BC859BW; BC860BW;
IC = -200 ?A; VCE = -5 V; RS = 2 k?; - - 4 dB
BC859CW; BC860CW
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ? 300 ?s; ? ? 0.02.
1999 Apr 12 |
5.2. bc859_bc860.pdf Size:131K _philips  |
 | 0.5 mA - -75 -300 mV
voltage
IC = -100 mA; IB = -5 mA - -250 -650 mV
VBEsat base-emitter saturation voltage IC = -10 mA; IB = -0.5 mA; note 1 - -700 - mV
IC = -100 mA; IB = -5 mA; note 1 - -850 - mV
VBE base-emitter voltage IC = -2 mA; VCE = -5 V; note 2 -600 -650 -750 mV
IC = -10 mA; VCE = -5 V; note 2 - - -820 mV
Cc collector capacitance IE = Ie = 0; VCB = -10 V; f = 1 MHz - 4.5 - pF
Ce emitter capacitance IC = Ic = 0; VEB = -500 mV; f = 1 MHz - 10 - pF
fT transition frequency IC = -1 |
5.3. bc859w_bc860w_4.pdf Size:51K _philips  |
 | 20 mV
Cc collector capacitance IE =ie = 0; VCB = -10 V; f = 1 MHz -- 5 pF
Ce emitter capacitance IC =ic = 0; VEB = -500 mV; f = 1 MHz - 10 - pF
fT transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
F noise figure; IC = -200 A; VCE = -5 V; RS =2k?; -- 4 dB
BC859W; BC860W; f = 10 Hz to 15.7 kHz
BC859BW; BC860BW;
IC = -200 A; VCE = -5 V; RS =2k?; -- 4 dB
BC859CW; BC860CW
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ? 300 s; ? ? 0.02.
1999 Apr 12 3
Philips Semicon |
5.4. bc859_bc860_4.pdf Size:51K _philips  |
 | -650 -750 mV
IC = -10 mA; VCE = -5 V; note 2 - - -820 mV
Cc collector capacitance IE =ie = 0; VCB = -10 V; f = 1 MHz - 4.5 - pF
Ce emitter capacitance IC =ic = 0; VEB = -500 mV; f = 1 MHz - 10 - pF
fT transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
F noise figure IC = -200 A; VCE = -5 V; RS =2k?;
f = 30 Hz to 15 kHz
BC859B; BC860B; - - 4 dB
BC859C; BC860C
noise figure IC = -200 A; VCE = -5 V; RS =2k?;
f = 1 kHz; B = 200 Hz
BC859B; BC860B; - - 4 dB
BC859C; BC8 |
5.5. bc856_bc857_bc858_bc859_bc860.pdf Size:144K _fairchild_semi  |
 | ase 2.Emitter 3.Collector
BC858BMTF 9CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC858CMTF 9CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859AMTF 9DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859BMTF 9DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC859CMTF 9DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC860AMTF 9EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC860BMTF 9EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collecto |
5.6. bc856_bc857_bc858_bc859_bc860.pdf Size:56K _samsung 5.7. bc856_bc857_bc858_bc859_bc860.pdf Size:271K _siemens  |
 | IB = 5 mA 250 650
Base-emitter saturation voltage1) VBEsat
IC = 10 mA, IB = 0.5 mA 700
IC = 100 mA, IB = 5 mA 850
Base-emitter voltage VBE(on)
IC = 2 mA, VCE = 5 V 600 650 750
IC = 10 mA, VCE = 5 V 820
1)
Pulse test: t ? 300 s, D = 2 %.
Semiconductor Group 3
BC 856 ... BC 860
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics
Transition frequency fT 250 MHz
IC = 20 mA, VCE = 5 |
5.8. bc856w_bc857w_bc858w_bc859w_bc860w.pdf Size:273K _siemens  |
 | sat
IC = 10 mA, IB = 0.5 mA 700
IC = 100 mA, IB = 5 mA 850
Base-emitter voltage VBE(on)
IC = 2 mA, VCE = 5 V 600 650 750
IC = 10 mA, VCE = 5 V 820
1)
Pulse test: t ? 300 s, D = 2 %.
Semiconductor Group 3
BC 856W ... BC 860W
Electrical Characteristics
at TA = 25 ?C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics
Transition frequency fT 250 MHz
IC = 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance Cobo 3pF
VCB = 10 V |
5.9. bc856_bc857_bc858_bc859_bc860.pdf Size:35K _diodes 5.10. bc856series_bc857series_bc858series_bc859series_bc860series.pdf Size:140K _infineon  |
 | )CBO
IC = 10 A, IE = 0 , BC856... 80 - -
IC = 10 A, IE = 0 , BC857..., BC860... 50 - -
IC = 10 A, IE = 0 , BC858..., BC859... 30 - -
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 1 A, IC = 0
Collector-base cutoff current ICBO A
VCB = 45 V, IE = 0 - - 0.015
VCB = 30 V, IE = 0 , TA = 150 C - - 5
-
DC current gain1) hFE
IC = 10 A, VCE = 5 V, hFE-grp.A - 140 -
IC = 10 A, VCE = 5 V, hFE-grp.B - 250 -
IC = 10 A, VCE = 5 V, hFE-grp.C - 480 -
IC = 2 mA, VCE = 5 V, hFE-grp. |
5.11. bc859_bc860.pdf Size:41K _kec  |
 | -1
VBE(sat)
100 -0.3
50
-0.1
VCE(sat)
30
-0.03
10 -0.01
-0.1 -0.3 -1 -3 -10 -30 -100 -0.1 -0.3 -1 -3 -10 -30 -100
COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA)
C C
C - V
ob CB
20
f=1MHz
I =0
E
10
5
3
1
-1 -3 -10 -30 -100 -200
COLLECTOR-BASE VOLTAGE V (V)
CB
1998. 6. 15 Revision No : 2 2/2
C
C
COLLECTOR CURRENT I
(mA)
COLLECTOR CURRENT I
(mA)
FE
CE(sat)
BE(sat)
V
, V
(V)
DC CURRENT GAIN h
SATURATION VOLTAGE
ob
CAPACITANCE C
(pF)
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Otros transistores... BC860B
, BC860BLT1
, BC860BR
, BC860BW
, BC860BWT1
, BC860C
, BC860CLT1
, BC860CR
, OC44
, BC860CWT1
, BC868
, BC869
, BC875
, BC876
, BC877
, BC878
, BC879
.
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