BD137-16
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: BD137-16
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12
Tensión colector-base (Ucb): 60
Tensión colector-emisor (Uce): 60
Tensión emisor-base (Ueb): 5
Corriente del colector DC máxima (Ic): 1
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 50
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TO126
Búsqueda de reemplazo de transistor bipolar BD137-16
BD137-16
- PDF Hoja de especificaciones para ver o descargar
4.1. bd135-bd137-bd139.pdf  Size:80K _secos  |
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5.1. bd135_bd137_bd139.pdf Size:100K _motorola  |
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Total Device Dissipation @ TC = 25_C PD IIIII 12.5 Watt
Derate above 25_C 100 mW/_C
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Operating and Storage Junction TJ, Tstg IIIII 55 to +150 _C
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Temperature Range
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5.2. bd135_bd137_bd139_3.pdf Size:49K _philips  |
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hFE2
1999 Apr 12 3
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
MBH729
160
handbook, full pagewidth
VCE = 2 V
hFE
120
80
40
0
10-1 1 10 102 103
IC (mA)
Fig.2 DC current gain; typical values.
1999 Apr 12 4
Philips Semiconductors Product specification
NPN power transistors BD135; BD137; BD139
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E A
P1
P
D |
5.3. bd135_bd137_bd139.pdf Size:44K _st  |
 | by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are notauthorized for use as critical components in life support devices or systems without express
written approvalof SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy |
5.4. bd135_bd137_bd139.pdf Size:41K _fairchild_semi  |
 |
)
at
(s
BE
B
V
10 I
1m
=
C
I
s
n)
(o
DC
BE
V
5V
=
CE
V
Package Demensions
TO-126
8.00 0.30 3.25 0.20
o3.20 0.10
(1.00) (0.50)
0.75 0.10
1.75 0.20
1.60 0.10
0.75 0.10
#1
+0.10
0.50
2.28TYP 2.28TYP 0.05
[2.280.20] [2.280.20]
Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000
BD135/137/139
3.90
0.10
11.00
0.20
14.20MAX
16.10
0.20
13.06
0.30
TRADEMARKS
The following are registered and un |
5.5. bd135_bd137_bd139.pdf Size:51K _samsung 5.6. bd135_bd137_bd139.pdf Size:117K _inchange_semiconductor 5.7. bd135_bd137_bd139.pdf Size:329K _wietron Otros transistores... BD135G
, BD136
, BD136-10
, BD136-16
, BD136-6
, BD136G
, BD137
, BD137-10
, BD139
, BD137-6
, BD137G
, BD138
, BD138-10
, BD138-6
, BD138G
, BD139
, BD139-10
.
|
