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Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BFJ17 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFJ17

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 40

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 185

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400

Capacitancia de salida (Cc), pF: 12

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar BFJ17

BFJ17 PDF doc:

1.1. mmbfj175.pdf Size:76K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.2. mmbfj175lt1rev0d.pdf Size:56K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.3. mmbfj177lt1rev0d.pdf Size:57K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper PChannel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainGate Voltage VDG 25 Vdc CASE 31808, STYLE 10 SOT23 (TO236AB) Reverse GateSource Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ177LT1 = 6Y ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 Vdc (VDS = 0, ID = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage VGS(off) 0.8 2.5 Vdc (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS ZeroGateVoltage Dr

1.4. pmbfj174_pmbf175_pmbf176_pmbf177.pdf Size:228K _philips2

BFJ17
BFJ17
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage ? VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current ?IG max. 50 mA Total power dissipation up to Tamb =25 ?CPtot max. 300 mW PMBFJ174 175 176 177 Dr

1.5. pmbfj174_pmbfj175_pmbfj176_pmbfj177_cnv_2.pdf Size:31K _philips2

BFJ17
BFJ17
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current -IG max. 50 mA Total power dissipation up to Tamb =25 CPtot m

1.6. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

BFJ17
BFJ17
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 -177

1.7. mmbfj175lt1.pdf Size:105K _onsemi

BFJ17
BFJ17
MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 SOT-23 (TO-236) (Note 1) TA = 25C 225 mW CASE 318 Derate above 25C 1.8 mW/C 1 STYLE 10 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25C unl

1.8. mmbfj177lt1-d.pdf Size:109K _onsemi

BFJ17
BFJ17
MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended 3 Operating Conditions is not implied. Extended exposure to stresses above the SOT-23 (TO-236AB) Recommended Operating Conditions may affect device reliability. CASE 318-08 1 STYLE 10 2 THERMAL CHARACTERISTICS Total Device Dissipation FR-5 Board PD 225 mW (Note 1) MARKING DIAGRAM TA = 25C 1.8 mW/C Derate above 25C Thermal Resistance, RqJA 556 C/W 6Y MG Junction-to-Ambient G Junction and Storage Temperature TJ, Tstg -55 to +150 C 1 1. FR-5 = 1.0 0.75 0.062 in. 6Y = Specific Device Code M = Date Code* G = Pb-Free Package (No

Otros transistores... BFG91A , BFG92A , BFG92AX , BFG93A , BFG93AX , BFG94 , BFG96 , BFG97 , BD139 , BFJ18 , BFJ19 , BFJ21 , BFJ22 , BFJ45 , BFJ46 , BFJ47 , BFJ48 .

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