Todos los transistores

Introduzca al menos 3 números o letras

 

BFJ17 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFJ17

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 40

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 185

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400

Capacitancia de salida (Cc), pF: 12

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar BFJ17

 

BFJ17 PDF:

1.1. mmbfj175lt1rev0d.pdf Size:56K _motorola

BFJ17
BFJ17

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max

1.2. mmbfj175.pdf Size:76K _motorola

BFJ17
BFJ17

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max

1.3. mmbfj177lt1rev0d.pdf Size:57K _motorola

BFJ17
BFJ17

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper PChannel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainGate Voltage VDG 25 Vdc CASE 31808, STYLE 10 SOT23 (TO236AB) Reverse GateSource Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissi

1.4. pmbfj174_pmbfj175_pmbfj176_pmbfj177_cnv_2.pdf Size:31K _philips2

BFJ17
BFJ17

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intend

1.5. pmbfj174_pmbf175_pmbf176_pmbf177.pdf Size:228K _philips2

BFJ17
BFJ17

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switch

1.6. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

BFJ17
BFJ17

J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG

1.7. mmbfj175lt1.pdf Size:105K _onsemi

BFJ17
BFJ17

MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 S

1.8. mmbfj177lt1-d.pdf Size:109K _onsemi

BFJ17
BFJ17

MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.

Otros transistores... BFG91A , BFG92A , BFG92AX , BFG93A , BFG93AX , BFG94 , BFG96 , BFG97 , BD139 , BFJ18 , BFJ19 , BFJ21 , BFJ22 , BFJ45 , BFJ46 , BFJ47 , BFJ48 .

 


BFJ17
  BFJ17
  BFJ17
  BFJ17
 
BFJ17
  BFJ17
  BFJ17
  BFJ17
 

social 

Liste