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2SB159 .. 2SB335
2SB336 .. 2SB522-1
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2SC1070B .. 2SC1279S
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2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
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2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
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2SD37 .. 2SD596-DV4
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2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
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BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
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BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
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FMG13 .. FPC644
FPC828 .. FXT555SM
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GET3013 .. GSDS50018
GSDS50020 .. GT43
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HSE164 .. IR2002
IR2500 .. K2112A
K2112B .. KRA225
KRA225M .. KRC122
KRC122M .. KRC886T
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KSB811-G .. KSC5024
KSC5024-O .. KSE200
KSE210 .. KT216B
KT216V .. KT357A
KT357B .. KT661A
KT662A .. KT818AM
KT818B .. KT928A
KT928B .. KTC3198L
KTC3199 .. KU601
KU602 .. MD2218F
MD2219 .. MJ15023
MJ15024 .. MJE13007F
MJE13007M .. MJH11020
MJH11021 .. MMBT2219A
MMBT2221 .. MMBTA92W
MMBTA93 .. MP1558
MP1558A .. MP8212
MP8213 .. MPS4121
MPS4122 .. MQ2218A
MQ2219 .. MT3S20TU
MT3S21P .. NA22FY
NA22H .. NB022EL
NB022ET .. NB221F
NB221FG .. NKT275
NKT275J .. NR431HG
NR431HR .. NTE256
NTE2560 .. P30
P302 .. PDTA123JM
PDTA123JT .. PMD20K120
PMD20K150 .. PTB20082
PTB20091 .. RCA9202A
RCA9202B .. RN1913FS
RN1961 .. RN2967
RN2967CT .. S8550T
S876T .. SF115C
SF115D .. SMBT3904
SMBT3904PN .. SRC1210UF
SRC1211 .. STN2222A
STN2222AS .. T1497
T1501 .. TD162/1
TD162A .. TIP34F
TIP35 .. TIX888
TIX890 .. TN6707A
TN6714A .. TRF5174
TRF641 .. UN211E
UN211F .. UPT614
UPT615 .. ZTX109BL
ZTX109BM .. ZTX618
ZTX649 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BFJ17 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFJ17

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8

Tensión colector-base (Ucb): 40

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C: 185

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 400

Capacitancia de salida (Cc), pF: 12

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar BFJ17

BFJ17 PDF doc:

1.1. mmbfj175.pdf Size:76K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.2. mmbfj177lt1rev0d.pdf Size:57K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper PChannel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainGate Voltage VDG 25 Vdc CASE 31808, STYLE 10 SOT23 (TO236AB) Reverse GateSource Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ177LT1 = 6Y ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 Vdc (VDS = 0, ID = 1.0 Adc) Gate Reverse Current IGSS 1.0 nAdc (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage VGS(off) 0.8 2.5 Vdc (VDS = 15 Vdc, ID = 10 nAdc) ON CHARACTERISTICS ZeroGateVoltage Dr

1.3. mmbfj175lt1rev0d.pdf Size:56K _motorola

BFJ17
BFJ17
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 PChannel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainGate Voltage VDG 25 V Reverse GateSource Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance Junction to Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBFJ175LT1 = 6W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS GateSource Breakdown Voltage V(BR)GSS 30 V (VDS = 0, ID = 1.0 A) Gate Reverse Current IGSS 1.0 nA (VDS = 0 V, VGS = 20 V) GateSource Cutoff Voltage VGS(OFF) 3.0 6.0 V (VDS = 15, ID = 10 nA) ON CHARACTERISTICS ZeroGateVolta

1.4. pmbfj174_pmbf175_pmbf176_pmbf177.pdf Size:228K _philips2

BFJ17
BFJ17
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage ? VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current ?IG max. 50 mA Total power dissipation up to Tamb =25 ?CPtot max. 300 mW PMBFJ174 175 176 177 Dr

1.5. pmbfj174_pmbfj175_pmbfj176_pmbfj177_cnv_2.pdf Size:31K _philips2

BFJ17
BFJ17
DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3 = gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage VDS max. 30 V Gate-source voltage VGSO max. 30 V Gate current -IG max. 50 mA Total power dissipation up to Tamb =25 CPtot m

1.6. j174_j175_j176_j177_mmbfj175_mmbfj176_mmbfj177.pdf Size:728K _fairchild_semi

BFJ17
BFJ17
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage - 30 V VGS Gate-Source Voltage 30 V 5 IGF Forward Gate Current 50 mA Operating and Storage Junction Temperature Range -55 to +150 C TJ ,Tstg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J174 -177

1.7. mmbfj177lt1-d.pdf Size:109K _onsemi

BFJ17
BFJ17
MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended 3 Operating Conditions is not implied. Extended exposure to stresses above the SOT-23 (TO-236AB) Recommended Operating Conditions may affect device reliability. CASE 318-08 1 STYLE 10 2 THERMAL CHARACTERISTICS Total Device Dissipation FR-5 Board PD 225 mW (Note 1) MARKING DIAGRAM TA = 25C 1.8 mW/C Derate above 25C Thermal Resistance, RqJA 556 C/W 6Y MG Junction-to-Ambient G Junction and Storage Temperature TJ, Tstg -55 to +150 C 1 1. FR-5 = 1.0 0.75 0.062 in. 6Y = Specific Device Code M = Date Code* G = Pb-Free Package (No

1.8. mmbfj175lt1.pdf Size:105K _onsemi

BFJ17
BFJ17
MMBFJ175LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 25 V Reverse Gate-Source Voltage VGS(r) -25 V 1 DRAIN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board, PD 3 SOT-23 (TO-236) (Note 1) TA = 25C 225 mW CASE 318 Derate above 25C 1.8 mW/C 1 STYLE 10 2 Thermal Resistance, Junction-to-Ambient RqJA 556 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the MARKING DIAGRAM Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 6W M G G ELECTRICAL CHARACTERISTICS (TA = 25C unl

Otros transistores... BFG91A , BFG92A , BFG92AX , BFG93A , BFG93AX , BFG94 , BFG96 , BFG97 , BD139 , BFJ18 , BFJ19 , BFJ21 , BFJ22 , BFJ45 , BFJ46 , BFJ47 , BFJ48 .

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