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2N834-51 .. 2S140
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2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3055

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 70

Tensión emisor-base (Ueb): 7

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 200

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.2

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2N3055

2N3055 PDF doc:

1.1. 2n3055.pdf Size:422K _rca

2N3055
2N3055

1.2. mj2955-2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorBase Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III EmitterBase Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.3. 2n3055_mj2955.pdf Size:179K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY IIIIIIIIIIIII IIIII IIIII III SILICON 60 VOLTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III III

1.4. 2n3055a_mj2955a_mj15015_mj15016.pdf Size:235K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or MJ2955A for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. PNP CurrentGain BandwidthProduct @ IC = 1.0 Adc MJ15016* fT = 0.8 MHz (Min) NPN IIIIIIIIIIIIIIIIIIIIIII = 2.2 MHz (Min) PNP *Motorola Preferred Device Safe Operating Area Rated to 60 V and 120 V, Respectively IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII 15 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII *MAXIMUM RATINGS COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII 2N3055A MJ15015 SILI

1.5. 2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorBase Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III EmitterBase Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.6. 2n3055_mj2955_2.pdf Size:90K _st

2N3055
2N3055
2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3055 2N3055 TO-3 tray MJ2955 MJ2955 January 2008 Rev 7 1/7 . www.st.com 7 Absolute maximun rating 2N3055 MJ2955 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 ?) 70 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7V IC Collector current 15 A IB Base current 7 A PTOT Total dissipation at Tc ?25C 115 W Tstg Storage temp

1.7. 2n3055.pdf Size:39K _st

2N3055
2N3055
2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (R = 100?)70 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 60 V V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 15 A IB Base Current 7 A o P Total Dissipation at T ? 25 C 115 W tot c o T Storage Temperature -65 to 200 C stg o T Max. Operating Junction Temperature 200 C j 1/4 October 1995 2N3055 THERMAL DATA o Rthj-ca se Thermal Resistance Junction-case Max 1.5 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector C

1.8. 2n3055_mj2955.pdf Size:70K _onsemi

2N3055
2N3055
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON Pb-Free Packages are Available* 60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc TO-204AA (TO-3) CASE 1-07 Collector-Base Voltage VCB 100 Vdc STYLE 1 Emitter-Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25C PD 115 W MARKING DIAGRAM Derate Above 25C 0.657 W/C Operating and Storage Junction TJ, Tstg - 65 to +200 C Temperature Range Maximum ratings are those values beyond w

1.9. 2n3055a_mj15015_mj15016.pdf Size:89K _onsemi

2N3055
2N3055
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads COMPLEMENTARY SILICON requiring higher safe operating area than the 2N3055. POWER TRANSISTORS Features 60, 120 VOLTS - 115, 180 WATTS Current-Gain - Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area - Rated to 60 V and 120 V, Respectively Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc TO-204AA (TO-3) 2N3055A 60 CASE 1-07 MJ15015, MJ15016 120 STYLE 1 Collector-Base Voltage VCBO Vdc 2N3055A 100 MJ15015, MJ15016

1.10. 2n3055.pdf Size:16K _utc

2N3055
2N3055
UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current Ic 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25C Ptot 115 W Storage Temperature TSTG -65 to 200 C Max. Operating Junction Temperature Tj 200 C ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining VCEO(sus) Ic=200mA, IB=0V 60 V Voltage Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=

1.11. mj15015-16_2n3055a_mj2955a.pdf Size:193K _mospec

2N3055
2N3055
A A A A

1.12. 2n3055hv.pdf Size:240K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ( Open Emitter) V 100 VCEO Collector Emitter Voltage (Open Base) V 100 VEBO Emitter Base Voltage V 7.0 IC Collector Current A 15 IB Base Current A 7.0 Total Power Dissipation up toTc=25?C Ptot W 100 Tj Junction Temperature 200 ?C Tstg Storage Temperature - 65 to +200 ?C THERMAL RESISTANCE Rth(j-c) Junction to Case 1.75 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Breakdown Voltages VCEO(sus)* IC=200mA, IB=0 100 V VCBO IC=1mA, IE= 0 100 V VEBO IE=1mA, IC =0 7 V ICEX VCE=100V, VBE=(off)=1.5V Collector Cut off Current 1.0 mA ICEX Tc=150?C VCE=100V, VBE=(off)=1.5V 5.0 ICEO VCE=30V, IB=0 Collect

1.13. 2n3055_mj2955.pdf Size:330K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100?) VCER V 70 Emitter Base Voltage VEBO 7 V Collector Current Continuous IC 15 A Base Current IB 7 A Power Dissipation @ Tc=25?C Ptot 115 W Derate Above 25?C 0.657 W/?C Operating And Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to Case 1.52 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Sustaing Voltage VCEO(sus)*IC=200mA, IB=0 60 V Collector Emitter Sustaing Voltage VCER(sus)* IC=200mA, RBE=100? 70 V Collector Cut Off Current ICEX VCE=100V, VB

1.14. 2n3055.pdf Size:237K _jmnic

2N3055
2N3055
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.52 ?/W Produ

1.15. 2n3055h.pdf Size:31K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 70 V CER VCEO Collector-Emitter Voltage 100 V V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C IB Base Current 7 A P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ?/W isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARA

1.16. 2n3055.pdf Size:107K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IBB Base Current 7 A PC Collector Power Dissipation@TC=25? 115 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.52 ?/W Rth j-c isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3055 ELECTRI

1.17. 2n3055a.pdf Size:33K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEV V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Base Current 7 A B P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal

Otros transistores... 2N3053 , 2N3053A , 2N3053L , 2N3053S , 2N3053SM , 2N3054 , 2N3054A , 2N3054S , C103 , 2N3055-1 , 2N3055-10 , 2N3055-2 , 2N3055-3 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 .

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