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100DA025D .. 2N1011
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2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3055

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 117

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 70

Tensión emisor-base (Ueb): 7

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 200

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.2

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO3

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2N3055 PDF doc:

1.1. 2n3055.pdf Size:422K _rca

2N3055
2N3055

1.2. 2n3055a_mj2955a_mj15015_mj15016.pdf Size:235K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dctodc converters, inverters, or MJ2955A for inductive loads requiring higher safe operating area than the 2N3055 and MJ2955. PNP CurrentGain BandwidthProduct @ IC = 1.0 Adc MJ15016* fT = 0.8 MHz (Min) NPN IIIIIIIIIIIIIIIIIIIIIII = 2.2 MHz (Min) PNP *Motorola Preferred Device Safe Operating Area Rated to 60 V and 120 V, Respectively IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII 15 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIII IIII *MAXIMUM RATINGS COMPLEMENTARY IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III IIIIIIIIIII IIII III IIIII IIII IIIII IIII 2N3055A MJ15015 SILI

1.3. 2n3055_mj2955.pdf Size:179K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY IIIIIIIIIIIII IIIII IIIII III SILICON 60 VOLTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III IIIII III IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIIIIIIIIIII IIIII IIIII III IIIII III III

1.4. mj2955-2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorBase Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III EmitterBase Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.5. 2n3055.pdf Size:130K _motorola

2N3055
2N3055
Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for generalpurpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 2070 @ IC = 4 Adc CollectorEmitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON 60 VOLTS MAXIMUM RATINGS 115 WATTS IIIIIIIIIIIII IIIII IIIII III Rating Symbol Value Unit IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCEO 60 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorEmitter Voltage VCER 70 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CollectorBase Voltage VCB 100 Vdc IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III EmitterBase Voltage VEB 7 Vdc IIIIIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIII

1.6. 2n3055_mj2955_2.pdf Size:90K _st

2N3055
2N3055
2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2N3055 2N3055 TO-3 tray MJ2955 MJ2955 January 2008 Rev 7 1/7 . www.st.com 7 Absolute maximun rating 2N3055 MJ2955 1 Absolute maximun rating Table 2. Absolute maximum rating Symbol Parameter Value Unit NPN 2N3055 PNP MJ2955 VCBO Collector-emitter voltage (IE = 0) 100 V VCER Collector-emitter voltage (RBE = 100 ?) 70 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Collector-base voltage (IC = 0) 7V IC Collector current 15 A IB Base current 7 A PTOT Total dissipation at Tc ?25C 115 W Tstg Storage temp

1.7. 2n3055.pdf Size:39K _st

2N3055
2N3055
2N3055 SILICON NPN TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V V Collector-Emitter Voltage (R = 100?)70 V CER BE VCEO Collector-Emitter Voltage (IB = 0) 60 V V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 15 A IB Base Current 7 A o P Total Dissipation at T ? 25 C 115 W tot c o T Storage Temperature -65 to 200 C stg o T Max. Operating Junction Temperature 200 C j 1/4 October 1995 2N3055 THERMAL DATA o Rthj-ca se Thermal Resistance Junction-case Max 1.5 C/W o ELECTRICAL CHARACTERISTICS (Tcase =25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICEV Collector C

1.8. 2n3055a_mj15015_mj15016.pdf Size:89K _onsemi

2N3055
2N3055
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High-Power Transistors http://onsemi.com These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These 15 AMPERE devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters, or for inductive loads COMPLEMENTARY SILICON requiring higher safe operating area than the 2N3055. POWER TRANSISTORS Features 60, 120 VOLTS - 115, 180 WATTS Current-Gain - Bandwidth-Product @ IC = 1.0 Adc fT = 0.8 MHz (Min) - NPN = 2.2 MHz (Min) - PNP Safe Operating Area - Rated to 60 V and 120 V, Respectively Pb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc TO-204AA (TO-3) 2N3055A 60 CASE 1-07 MJ15015, MJ15016 120 STYLE 1 Collector-Base Voltage VCBO Vdc 2N3055A 100 MJ15015, MJ15016

1.9. 2n3055_mj2955.pdf Size:70K _onsemi

2N3055
2N3055
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http://onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Excellent Safe Operating Area COMPLEMENTARY SILICON Pb-Free Packages are Available* 60 VOLTS, 115 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Emitter Voltage VCER 70 Vdc TO-204AA (TO-3) CASE 1-07 Collector-Base Voltage VCB 100 Vdc STYLE 1 Emitter-Base Voltage VEB 7 Vdc Collector Current - Continuous IC 15 Adc Base Current IB 7 Adc Total Power Dissipation @ TC = 25C PD 115 W MARKING DIAGRAM Derate Above 25C 0.657 W/C Operating and Storage Junction TJ, Tstg - 65 to +200 C Temperature Range Maximum ratings are those values beyond w

1.10. 2n3055.pdf Size:16K _utc

2N3055
2N3055
UTC 2N3055 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL VALUE UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current Ic 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25C Ptot 115 W Storage Temperature TSTG -65 to 200 C Max. Operating Junction Temperature Tj 200 C ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-Emitter Sustaining VCEO(sus) Ic=200mA, IB=0V 60 V Voltage Collector-Emitter Sustaining Voltage VCER(sus) Ic=0.2 A, RBE=

1.11. mj15015-16_2n3055a_mj2955a.pdf Size:193K _mospec

2N3055
2N3055
A A A A

1.12. 2n3055hv.pdf Size:240K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055HV NPN POWER TRANSISTOR TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage ( Open Emitter) V 100 VCEO Collector Emitter Voltage (Open Base) V 100 VEBO Emitter Base Voltage V 7.0 IC Collector Current A 15 IB Base Current A 7.0 Total Power Dissipation up toTc=25?C Ptot W 100 Tj Junction Temperature 200 ?C Tstg Storage Temperature - 65 to +200 ?C THERMAL RESISTANCE Rth(j-c) Junction to Case 1.75 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Breakdown Voltages VCEO(sus)* IC=200mA, IB=0 100 V VCBO IC=1mA, IE= 0 100 V VEBO IE=1mA, IC =0 7 V ICEX VCE=100V, VBE=(off)=1.5V Collector Cut off Current 1.0 mA ICEX Tc=150?C VCE=100V, VBE=(off)=1.5V 5.0 ICEO VCE=30V, IB=0 Collect

1.13. 2n3055_mj2955.pdf Size:330K _cdil

2N3055
2N3055
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100?) VCER V 70 Emitter Base Voltage VEBO 7 V Collector Current Continuous IC 15 A Base Current IB 7 A Power Dissipation @ Tc=25?C Ptot 115 W Derate Above 25?C 0.657 W/?C Operating And Storage Junction Tj, Tstg - 65 to +200 ?C Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to Case 1.52 ?C/W ELECTRICAL CHARACTERISTICS (TC=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNITS Collector Emitter Sustaing Voltage VCEO(sus)*IC=200mA, IB=0 60 V Collector Emitter Sustaing Voltage VCER(sus)* IC=200mA, RBE=100? 70 V Collector Cut Off Current ICEX VCE=100V, VB

1.14. 2n3055.pdf Size:237K _jmnic

2N3055
2N3055
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N3055 DESCRIPTION ·With TO-3 package ·Complement to type MJ2955 ·DC Current Gain -hFE = 20–70 @ IC = 4 Adc ·Collector–Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc ·Excellent Safe Operating Area APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PC Collector power dissipation TC=25? 115 W Tj Junction temperature 150 ? Tstg Storage temperature -65~200 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.52 ?/W Produ

1.15. 2n3055.pdf Size:107K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IBB Base Current 7 A PC Collector Power Dissipation@TC=25? 115 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.52 ?/W Rth j-c isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3055 ELECTRI

1.16. 2n3055a.pdf Size:33K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055A DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955A APPLICATIONS ·Designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters, inverters, or for inductive loads. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEV V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C I Base Current 7 A B P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal

1.17. 2n3055h.pdf Size:31K _inchange_semiconductor

2N3055
2N3055
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 70 V CER VCEO Collector-Emitter Voltage 100 V V Emitter-Base Voltage 7 V EBO I Collector Current-Continuous 15 A C IB Base Current 7 A P Collector Power Dissipation@T =25? 115 W C C T Junction Temperature 200 ? J Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ?/W isc Website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H ELECTRICAL CHARA

Otros transistores... 2N3053 , 2N3053A , 2N3053L , 2N3053S , 2N3053SM , 2N3054 , 2N3054A , 2N3054S , C103 , 2N3055-1 , 2N3055-10 , 2N3055-2 , 2N3055-3 , 2N3055-4 , 2N3055-5 , 2N3055-6 , 2N3055-7 .

 

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