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BU4508DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU4508DX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45

Tensión colector-base (Ucb): 1500

Tensión colector-emisor (Uce): 800

Tensión emisor-base (Ueb): 3

Corriente del colector DC máxima (Ic): 8

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF: 80

Ganancia de corriente contínua (hfe): 12

Empaquetado / Estuche: SOT399

Búsqueda de reemplazo de transistor bipolar BU4508DX

 

BU4508DX PDF:

1.1. bu4508dx_2.pdf Size:44K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and c

3.1. bu4508dz_2.pdf Size:44K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector c

3.2. bu4508df_2.pdf Size:43K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and c

3.3. bu4508dz.pdf Size:258K _inchange_semiconductor

BU4508DX
BU4508DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION ·High Voltage- ·High Switching Speed ·Built-in Damer Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector

3.4. bu4508df.pdf Size:83K _inchange_semiconductor

BU4508DX
BU4508DX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDI

Otros transistores... BU426A , BU426AF , BU426F , BU433 , BU4508AF , BU4508AX , BU4508AZ , BU4508DF , BC547B , BU500 , BU505 , BU505D , BU505DF , BU505F , BU506 , BU506D , BU506DF .

 


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