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BU522 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU522

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hfe): 250

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar BU522

BU522 Datasheet PDF:

1.1. bu522bre.pdf Size:105K _motorola

BU522
BU522

Order this document MOTOROLA by BU522B/D SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power 7 AMPERES Darlingtons DARLINGTON POWER TRANSISTORS Power Transistor mainly intended for use as ignition circuit output transistor. NPN SILICON Specified minimum sustaining voltage: 450 VOLTS VCER(sus) = 425 V at IC = 1 A 75 WATTS High S.O.A. capability: VCE = 400 V IIIIIIII

1.2. bu522.pdf Size:262K _inchange_semiconductor

BU522
BU522

INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 350 V VCER Collector-Emitter Voltage 37

1.3. bu522b.pdf Size:262K _inchange_semiconductor

BU522
BU522

INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522B DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 425 V VCER Collector-Emitter Voltage 4

1.4. bu522a.pdf Size:262K _inchange_semiconductor

BU522
BU522

INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522A DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCER(SUS) Collector-Emitter Voltage 400 V VCER Collector-Emitter Voltage 4

Otros transistores... BU508D , BU508DF , BU508DFI , BU508DR , BU508DRF , BU508DXI , BU508FI , BU508L , 2N3773 , BU522A , BU522B , BU526 , BU526A , BU526A-4 , BU526A-5 , BU526A-6 , BU526A-7 .

 


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Introduzca al menos 2 números o letras