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100DA025D .. 2N1011
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2N2786 .. 2N2982
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2N3250X .. 2N3514
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2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BUT11AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUT11AX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20

Tensión colector-base (Ucb): 1000

Tensión colector-emisor (Uce): 450

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: SOT186

Búsqueda de reemplazo de transistor bipolar BUT11AX

BUT11AX PDF doc:

1.1. but11ax_1.pdf Size:110K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 150 - ns PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION c case 1 base 2 collector b 3 emitter case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE

1.2. but11ax.pdf Size:122K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 150 - ns PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION c case 1 base 2 collector b 3 emitter case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE

4.1. but11afr.pdf Size:120K _motorola

BUT11AX
BUT11AX
Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) CASE 221D02 TO220 TYPE MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage VCEO(sus) 450 Vdc CollectorEmitter Breakdown Voltage VCES 1000 Vdc EmitterBase Voltage VEBO 9.0 Vdc RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500 TA = 25

4.2. but11af_1.pdf Size:105K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 20 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 800 - ns [INCLUDE] LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter volt

4.3. but11apx.pdf Size:61K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCBO Collector-Base voltage (open emitter) - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 3.5 - A tf Fall time ICsat=2.5A,IB1=0.5A,IB2=0.8A 145 160 ns PINNING - SOT186A PIN CONFIGURATION SYMBOL

4.4. but11ai_1.pdf Size:18K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ? 25 ?C - 100 W VCEsat Collector-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - 1.5 V ICsat Collector Saturation current 2.5 A tf Inductive fall time ICon = 2.5 A; IBon = 0.5 A 0.08 0.15 s PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION c tab 1 base 2 collector b 3 emitter tab collector 1 2 3 e LIMITING VALUES Limiting values in ac

4.5. but11a.pdf Size:66K _st

BUT11AX
BUT11AX
BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE 3 2 TRANSISTOR LOW POWER CONVERTERS 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0 V) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 450 V V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 5 A C ICM Collector Peak Current 10 A IB Base Current 2 A I Base Peak Current 4 A BM P Total Power Dissipation at T ? 25 oC83 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 June 1997 BUT11A THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.5 C/W ELECTRICA

4.6. but11af_but11f.pdf Size:47K _fairchild_semi

BUT11AX
BUT11AX
BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BUT11F 850 V : BUT11AF 1000 V VCEO Collector-Emitter Voltage : BUT11F 400 V : BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11F IC = 100mA, IB = 0 400 V : BUT11AF 450 V ICES Collector Cut-off Current : BUT11F VCE = 850V, VBE = 0 1 mA : BUT11AF VCE = 1000V, VBE = 0 1 mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sa

4.7. but11a_but11.pdf Size:42K _fairchild_semi

BUT11AX
BUT11AX
BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage V : BUT11 850 : BUT11A 1000 VCEO Collector-Emitter Voltage V : BUT11 400 : BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25C) 100 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11 IC = 100mA, IB = 0 400 V : BUT11A 450 V ICES Collector Cut-off Current : BUT11 VCE = 850V, VBE = 0 1 mA : BUT11A 1 mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sat) Collector-Emitter Saturation Volt

4.8. but11a.pdf Size:194K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Em

4.9. but11afi.pdf Size:223K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 35 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.57 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PA

4.10. but11apx.pdf Size:226K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 32 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.95 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PA

4.11. but11af.pdf Size:159K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 40 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.125 K/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP

Otros transistores... BUT102 , BUT11 , BUT11/5 , BUT11/6 , BUT11/7 , BUT11A , BUT11AF , BUT11AFI , 2SA1015 , BUT11F , BUT12 , BUT12A , BUT12AF , BUT12AFI , BUT12F , BUT13 , BUT131 .

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