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100DA025D .. 2N1011
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2N2786 .. 2N2982
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2N5730 .. 2N6038
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2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC536SP
2SC537 .. 2SC5819
2SC582 .. 2SC690M
2SC691 .. 2SC90
2SC900 .. 2SD1065S
2SD1066 .. 2SD1257A
2SD1258 .. 2SD1446
2SD1447 .. 2SD1667
2SD1667Q .. 2SD1854
2SD1855 .. 2SD21
2SD2100 .. 2SD2449
2SD2453 .. 2SD365A
2SD366 .. 2SD594
2SD596 .. 2SD794-O
2SD794-R .. 2STF1550
2STF2220 .. 40261
40262 .. 40837
40850 .. A747A
A747B .. ACY23
ACY23V .. AF170
AF171 .. ASY85
ASY86 .. BC158C
BC158V .. BC250
BC250A .. BC340-6
BC341 .. BC487
BC487-18 .. BC817-16
BC817-16L .. BC860
BC860A .. BCW14
BCW14K .. BCW98B
BCW98C .. BCY72QF
BCY76 .. BD233
BD233-10 .. BD371D-6
BD372 .. BD618
BD619 .. BD952F
BD953 .. BDW24
BDW24A .. BDY12-10
BDY12-16 .. BF241C
BF241D .. BF432
BF432L .. BF870EA
BF870S .. BFQ38S
BFQ39 .. BFS505
BFS51 .. BFV97N
BFV98 .. BFY86A
BFY86B .. BLY17
BLY17A .. BSS82BL
BSS82C .. BSX61
BSX62 .. BTB9435L3
BTC1510E3 .. BU209A
BU210 .. BUF405AFI
BUF405AFP .. BUS21C
BUS21D .. BUW74
BUW75 .. BUY78
BUY79 .. CD9012GHI
CD9012J .. CIL148B
CIL148C .. CL155B
CL155C .. CPS1545B
CPS1550B .. CSA952M
CSA952M9AW .. CSC2611
CSC2655 .. CTP1033
CTP1034 .. D29J10
D29J2 .. D42CU11
D42CU12 .. D64TS5
D64VE3 .. DT34-300
DT34-400 .. DTC014EUB
DTC014YEB .. DTL3425
DTL3426 .. ECG2327
ECG2328 .. ED1601D
ED1601E .. ET1550
ET1551 .. FE4016
FE4017 .. FMC4A
FMC5A .. FPC1317
FPC1318 .. FXT551
FXT551SM .. GE10022
GE10023 .. GET2484
GET2904 .. GSDR10025I
GSDR15020 .. GT405B
GT405G .. HEPS3021
HEPS3024 .. HSE125
HSE127 .. IMT1A
IMT2A .. K2105
K2105A .. KRA122S
KRA152F .. KRC114
KRC114M .. KRC864F
KRC864U .. KSB744A-O
KSB744A-R .. KSC3953
KSC3953C .. KSD986
KSD986-O .. KT209L
KT209M .. KT343B
KT343V .. KT640B-2
KT640V-2 .. KT817A9
KT817B .. KT9144A9
KT9145A9 .. KTC2983D
KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
NR421FF .. NTE2426
NTE2427 .. P213A
P213B .. PDTA113ZE
PDTA113ZM .. PMD13K40
PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
RN2911AFS .. S2818
S2818A .. SE6023
SE6062 .. SM2176
SM2177 .. SRC1205E
SRC1205EF .. STD1802
STD1802T4-A .. T1250
T1251 .. TBC557
TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

BUT11AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUT11AX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20

Tensión colector-base (Ucb): 1000

Tensión colector-emisor (Uce): 450

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: SOT186

Búsqueda de reemplazo de transistor bipolar BUT11AX

BUT11AX PDF doc:

1.1. but11ax_1.pdf Size:110K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 150 - ns PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION c case 1 base 2 collector b 3 emitter case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE

1.2. but11ax.pdf Size:122K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 150 - ns PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION c case 1 base 2 collector b 3 emitter case isolated 1 2 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCE

4.1. but11afr.pdf Size:120K _motorola

BUT11AX
BUT11AX
Order this document MOTOROLA by BUT11AF/D SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor POWER TRANSISTOR 5.0 AMPERES For Isolated Package Applications 450 VOLTS 40 WATTS The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) CASE 221D02 TO220 TYPE MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Sustaining Voltage VCEO(sus) 450 Vdc CollectorEmitter Breakdown Voltage VCES 1000 Vdc EmitterBase Voltage VEBO 9.0 Vdc RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500 TA = 25

4.2. but11af_1.pdf Size:105K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 20 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 2.5 - A tf Fall time 800 - ns [INCLUDE] LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter volt

4.3. but11apx.pdf Size:61K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCBO Collector-Base voltage (open emitter) - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Ths ? 25 ?C - 32 W VCEsat Collector-emitter saturation voltage - 1.5 V ICsat Collector saturation current 3.5 - A tf Fall time ICsat=2.5A,IB1=0.5A,IB2=0.8A 145 160 ns PINNING - SOT186A PIN CONFIGURATION SYMBOL

4.4. but11ai_1.pdf Size:18K _philips

BUT11AX
BUT11AX
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AI GENERAL DESCRIPTION Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control systems etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V VCEO Collector-emitter voltage (open base) - 450 V IC Collector current (DC) - 5 A ICM Collector current peak value - 10 A Ptot Total power dissipation Tmb ? 25 ?C - 100 W VCEsat Collector-emitter saturation voltage IC = 2.5 A; IB = 0.33 A - 1.5 V ICsat Collector Saturation current 2.5 A tf Inductive fall time ICon = 2.5 A; IBon = 0.5 A 0.08 0.15 s PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION c tab 1 base 2 collector b 3 emitter tab collector 1 2 3 e LIMITING VALUES Limiting values in ac

4.5. but11a.pdf Size:66K _st

BUT11AX
BUT11AX
BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE 3 2 TRANSISTOR LOW POWER CONVERTERS 1 TO-220 DESCRIPTION The BUT11A is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0 V) 1000 V VCEO Collector-Emitter Voltage (IB = 0) 450 V V Emitter-Base Voltage (I = 0) 9 V EBO C I Collector Current 5 A C ICM Collector Peak Current 10 A IB Base Current 2 A I Base Peak Current 4 A BM P Total Power Dissipation at T ? 25 oC83 W tot c o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 June 1997 BUT11A THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.5 C/W ELECTRICA

4.6. but11af_but11f.pdf Size:47K _fairchild_semi

BUT11AX
BUT11AX
BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BUT11F 850 V : BUT11AF 1000 V VCEO Collector-Emitter Voltage : BUT11F 400 V : BUT11AF 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25C) 40 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11F IC = 100mA, IB = 0 400 V : BUT11AF 450 V ICES Collector Cut-off Current : BUT11F VCE = 850V, VBE = 0 1 mA : BUT11AF VCE = 1000V, VBE = 0 1 mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sa

4.7. but11a_but11.pdf Size:42K _fairchild_semi

BUT11AX
BUT11AX
BUT11/11A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage V : BUT11 850 : BUT11A 1000 VCEO Collector-Emitter Voltage V : BUT11 400 : BUT11A 450 VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Collector Dissipation (TC=25C) 100 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11 IC = 100mA, IB = 0 400 V : BUT11A 450 V ICES Collector Cut-off Current : BUT11 VCE = 850V, VBE = 0 1 mA : BUT11A 1 mA IEBO Emitter Cut-off Current VBE = 9V, IC = 0 10 mA VCE(sat) Collector-Emitter Saturation Volt

4.8. but11a.pdf Size:194K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A Collector Power Dissipation PC @TC=25? 100 W Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.25 ?/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11A ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Em

4.9. but11afi.pdf Size:223K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 35 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.57 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AFI ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PA

4.10. but11apx.pdf Size:226K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 32 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 3.95 ?/W Rth j-c isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PA

4.11. but11af.pdf Size:159K _inchange_semiconductor

BUT11AX
BUT11AX
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current 2 A IBM Base Current-Peak 4 A Collector Power Dissipation PC @TC=25? 40 W Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance, Junction to Case 3.125 K/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP

Otros transistores... BUT102 , BUT11 , BUT11/5 , BUT11/6 , BUT11/7 , BUT11A , BUT11AF , BUT11AFI , 2SA1015 , BUT11F , BUT12 , BUT12A , BUT12AF , BUT12AFI , BUT12F , BUT13 , BUT131 .

 

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