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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

C5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15

Tensión colector-base (Ucb): 50

Tensión colector-emisor (Uce): 45

Tensión emisor-base (Ueb): 3

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 125

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 135

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar C5

C5 PDF doc:

1.1. bc559_bc560.pdf Size:107K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 30 45 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CEO Vdc (I

1.2. bc517rev.pdf Size:206K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC517/D Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 17 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCES 30 Vdc CollectorBase Voltage VCB 40 Vdc EmitterBase Voltage VEB 10 Vdc Collector Current Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25C PD 625 mW Derate above 25C 12 mW/C Total Power Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to RqJA 200 C/W Ambient Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CES 30 Vdc (IC = 2.0 mAdc, VBE = 0) Collect

1.3. bc556_bc557_bc558_2.pdf Size:220K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdo

1.4. bc556_bc557_bc558.pdf Size:159K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdo

1.5. bc549_bc550.pdf Size:110K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC549B/D Low Noise Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC549 BC550 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 30 45 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CEO Vdc (IC = 10

1.6. bc546_bc547_bc548.pdf Size:193K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC546/D Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 546 547 548 Rating Symbol Unit CASE 2904, STYLE 17 TO92 (TO226AA) CollectorEmitter Voltage VCEO 65 45 30 Vdc CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watt Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Br

1.7. jc501_3.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC501 NPN general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 Mar 17 Philips Semiconductors Product specification NPN general purpose transistor JC501 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 1 PNP complement: JA101. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 45 V VEBO emitter-base voltage open collector - 6V IC collector current (DC) - 100 mA ICM peak collector current - 200 mA IBM peak base current - 200 m

1.8. bfc520_3.pdf Size:83K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor 1997 Sep 10 Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 FEATURES PINNING - SOT353 Small size SYMBOL PIN DESCRIPTION High power gain at low bias current and high b2 1 base 2 frequencies e1 2 emitter 1 High reverse isolation b1 3 base 1 Low noise figure c1/e2 4 collector 1/emitter 2 Gold metallization ensures excellent reliability c2 5 collector 2 Minimum operating voltage VC2-E1 =1V. APPLICATIONS handbook, halfpage c2 5 4 Low noise, high gain amplifiers b2 Oscillator buffer amplifiers c1/e2 Wideband voltage-to-current converters. b1 DESCRIPTION 1 2 3 e1 Cascode amplifier with two discrete dies in a surface Top view MAM212 mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications

1.9. bc517_4.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS Where very high amplification is required. 2 3 handbook, halfpage 1 DESCRIPTION TR1 2 TR2 NPN Darlington transistor in a TO-92; SOT54 plastic 3 package. PNP complement: BC516. 1 MAM302 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCES collector-emitter voltage VBE =0 - 30 V VEBO emitter-base voltage open collector - 10 V IC collector current (DC) - 500 mA ICM peak collec

1.10. bc549_bc550_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector Low noise stages in audio frequency equipment. 1 DESCRIPTION handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC559 and BC560. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 - 30 V BC550 - 50 V VCEO collector-emitter voltage open base BC549 - 30 V BC550 - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100

1.11. bc517.pdf Size:43K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS Where very high amplification is required. 2 3 handbook, halfpage 1 DESCRIPTION TR1 2 TR2 NPN Darlington transistor in a TO-92; SOT54 plastic 3 package. PNP complement: BC516. 1 MAM302 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 40 V VCES collector-emitter voltage VBE =0 - 30 V VEBO emitter-base voltage open collector - 10 V IC collector current (DC) - 500 mA ICM peak collec

1.12. jc556_jc557_jc558_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC556; JC557; JC558 PNP general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 2 2 3 PNP transistor in a TO-92; SOT54 plastic package. 1 NPN complements: JC546, JC547 and JC548. 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter JC556 --80 V JC557 --50 V JC558 --30 V VCEO collector-emitter voltage open base JC556 --65 V JC557 --45 V JC558 --30 V VEBO emitter-base voltage open

1.13. bc549.pdf Size:44K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector Low noise stages in audio frequency equipment. 1 DESCRIPTION handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC559 and BC560. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 - 30 V BC550 - 50 V VCEO collector-emitter voltage open base BC549 - 30 V BC550 - 45 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 100

1.14. jc549_jc550_cnv_2.pdf Size:53K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC549; JC550 NPN general purpose transistors 1997 Jul 08 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. 1 handbook, halfpage 2 2 3 1 DESCRIPTION 3 NPN transistor in a TO-92; SOT54 plastic package. MAM259 PNP complements: JC559 and JC560. Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter JC549 - 30 V JC550 - 50 V VCEO collector-emitter voltage open base JC549 - 30 V JC550 - 45 V IC

1.15. bc516.pdf Size:44K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS Where very high amplification is required. handbook, halfpage 2 3 1 DESCRIPTION TR1 2 TR2 PNP Darlington transistor in a TO-92; SOT54 plastic 3 package. NPN complement: BC517. 1 MAM303 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage (open emitter) open emitter --40 V VCES collector-emitter voltage VBE =0 --30 V VEBO emitter-base voltage open collector --10 V IC collector current (DC) --500 mA

1.16. bc847_bc547_ser.pdf Size:97K _philips

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BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 10 December 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847B/DG - BC847C BC857C BC847W SOT323 SC-70 - BC857W BC847AW BC857AW BC847BW BC857BW BC847BW/DG - BC847CW BC857CW BC847T SOT416 SC-75 - BC857T BC847AT BC857AT BC847AT/DG - BC847BT BC857BT BC847CT BC857CT BC847AM SOT883 SC-101 - BC857AM BC847BM BC857BM BC847CM BC857CM BC547[2] SOT54 SC-43A TO-92 BC557[2] BC547B[2] BC557B[2] BC547C[2] BC557C[2] [1] /DG: halogen-free [2] Also available in SOT54A and SOT54 variant packages (see Section 2). BC847/BC547 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors 1.2 Features Low current Low voltage Three different gain selections 1.3 Applicatio

1.17. bc549_bc550.pdf Size:231K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector Low noise stages in audio frequency equipment. DESCRIPTION 1 handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC559 and BC560. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC549C SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BC550C LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC549 - 30 V BC550 -

1.18. bc556_bc557.pdf Size:246K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 3 2 PNP transistor in a TO-92; SOT54 plastic package. 3 2 NPN complements: BC546 and BC547. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION BC556 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 BC557 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC556 - -80 V BC557 - -

1.19. bfc505_2.pdf Size:65K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor 1996 Oct 08 Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 FEATURES PINNING - SOT353 Small size PIN SYMBOL DESCRIPTION High power gain at low bias current and high 1b2 base 2 frequencies 2e1 emitter 1 High reverse isolation 3b1 base 1 Low noise figure 4c1/e2 collector 1/emitter 2 Gold metallization ensures excellent reliability 5c2 collector 2 Minimum operating voltage VC2-E1 =1V. APPLICATIONS handbook, halfpage c2 Low voltage, low current, low noise and high gain 5 4 amplifiers b2 Oscillator buffer amplifiers c1/e2 Wideband voltage-to-current converters. b1 DESCRIPTION 1 2 3 e1 Top view MAM212 Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for lo

1.20. jc546_jc547_jc548_3.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC546; JC547; JC548 NPN general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Mar 14 Philips Semiconductors Product specification NPN general purpose transistors JC546; JC547; JC548 FEATURES PINNING Low current max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification, e.g. driver and output stages of audio amplifiers. 1 handbook, halfpage 2 2 DESCRIPTION 3 1 NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC556, JC557 and JC558. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter JC546 - 80 V JC547 - 50 V JC548 - 30 V VCEO collector-emitter voltage open-base JC546 - 65 V JC547 -

1.21. bc546_bc547.pdf Size:38K _philips

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Phi I i ps Semi c?nduct ?rsPr?duct speci ficat i ?n Phi l i ps Semi conduct ors Product speci ficat i on NPN generaI purp?se t ransi st ?rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547 FEATURES PI NNI NG THERMAL CHARACTERI STI CS Low cur r ent (max. 100mA) PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T Low vol t age (max. 65 V). 1 emi t t er Rthj-a t hermal resi st ance f rom j unct i on t o ambi ent not e 10. 25K/mW 2 base N?t e APPLI CATI ONS 3 col l ect or 1. Transi st or mount ed on an FR4 pri nt ed- ci rcui t board. General purpose swi t chi ng and ampl i f i cat i on. CHARACTERI STI CS DESCRI PTI ON 1 3 Tj =25 C unl ess ot her wi se speci fied. 2 3 NPN t ransi st or i n a TO- 92; SOT54 pl ast i c package. SYMBOLPARAMETERCONDI TI ONSMI N. TYP. MAX. UNI T 2 PNPcompl ement s: BC556 and BC557. ICBO col l ect or cut - of f current IE= 0; VCB=30V - - 15 nA 1 IE= 0; VCB=30V; Tj = 150C - - 5 A IEBO emi t t er cut - of f currentIC

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification. DESCRIPTION 1 handbook, halfpage 3 2 PNP transistor in a TO-92; SOT54 plastic package. 3 2 NPN complements: BC546 and BC547. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC556 --80 V BC557 --50 V VCEO collector-emitter voltage open base BC556 --65 V BC557 --45 V VEBO emitter-base voltage open collector --5V IC collector current (DC) --100 m

1.23. jc559_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC559 PNP general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 Jul 09 Philips Semiconductors Product specification PNP general purpose transistor JC559 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification Low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment. 1 handbook, halfpage 2 2 3 1 DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --30 V VCEO collector-emitter voltage open base --30 V VEBO emitter-base voltage open collector --5V IC collector current (DC) -

1.24. bc846_bc546_ser.pdf Size:373K _philips

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BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors Rev. 07 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC846 SOT23 - TO-236AB BC856 BC846W SOT323 SC-70 - BC856W BC846T SOT416 SC-75 - BC856T BC546A[2] SOT54 SC-43A TO-92 BC556A BC546B[2] SOT54 SC-43A TO-92 BC556B [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features General-purpose transistors SMD plastic packages Two different gain selections 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA hFE DC current gain VCE =5 V; 110 - 450

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification. 1 DESCRIPTION handbook, halfpage 3 2 3 NPN transistor in a TO-92; SOT54 plastic package. 2 PNP complements: BC556 and BC557. 1 MAM182 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC546 - 80 V BC547 - 50 V VCEO collector-emitter voltage open base BC546 - 65 V BC547 - 45 V VEBO emitter-base voltage open collector BC546 - 6V BC547 - 6V IC collector c

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Jun 03 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 emitter 2 base APPLICATIONS 3 collector General purpose switching and amplification. 1 handbook, halfpage 3 DESCRIPTION 2 3 PNP transistor in a TO-92 (SOT54) plastic package. 2 NPN complement: BC549. 1 MAM281 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter --30 V VCEO collector-emitter voltage open base --30 V VEBO emitter-base voltage open collector --5 V IC collector current (DC) --100 mA ICM peak collector current --200 mA IBM peak base current --20

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS Where very high amplification is required. handbook, halfpage 2 3 1 DESCRIPTION TR1 2 TR2 PNP Darlington transistor in a TO-92; SOT54 plastic 3 package. NPN complement: BC517. 1 MAM303 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage (open emitter) open emitter --40 V VCES collector-emitter voltage VBE =0 --30 V VEBO emitter-base voltage open collector --10 V IC collector current (DC) --500 mA

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DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor 1997 Mar 03 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor PPC5001T FEATURES PINNING - SOT447A Diffused emitter ballasting resistors providing excellent PIN DESCRIPTION current sharing and withstanding a high VSWR 1 base Interdigitated structure provides high emitter efficiency 2 emitter Gold metallization realizes very stable characteristics 3 collector and excellent lifetime Multicell geometry gives good balance of dissipated power and low thermal resistance handbook, halfpage 3 APPLICATIONS c Intended for use in common-collector oscillator circuits in military and professional applications up to 5 GHz. 1 b e DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT447A metal ceramic flange package. 2 Side view MAM331 Marking

1.29. stp8nc50-fp--1.pdf Size:352K _st

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STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7? - 8A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 ? 8 A STP8NC50FP 500 V < 0.85 ? 8 A TYPICAL RDS(on) = 0.7 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED TO-220 TO-220FP NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I?PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)8NC50(-1) STP8NC50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR D

1.30. stb4nc50.pdf Size:244K _st

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STB4NC50 N-CHANNEL 500V - 2.2? - 4A D2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STB4NC50 500V < 2.7? 4 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 1 DESCRIPTION D?PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 4A ID Drain Current (co

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BC547B BC547C SMALL SIGNAL NPN TRANSISTORS Ordering Code Marking Package / Shipment BC547B BC547B TO-92 / Bulk BC547B-AP BC547B TO-92 / Ammopack BC547C BC547C TO-92 / Bulk BC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 BC547B - THE PNP COMPLEMENTARY Bulk Ammopack TYPE IS BC557B APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT INTERNAL SCHEMATIC DIAGRAM SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 50 V VCEO Collector-Emitter Voltage (IB = 0) 45 V V Emitter-Base Voltage (I = 0) 6 V EBO C I Collector Current 100 mA C ICM Collector Peak Current (tp < 5 ms) 200 mA Ptot Total Dissipation at TC = 25 oC 500 mW o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 March 2003 BC547B / BC547

1.32. stp3nc50.pdf Size:238K _st

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STP3NC50 N-CHANNEL 500V - 3? - 2.8A TO-220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP3NC50 500 V < 4 ? 2.8 A TYPICAL RDS(on) = 3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 The PowerMESHII is the evolution of the first TO-220 generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 2.8 A ID Drain Curr

1.33. 2stc5949.pdf Size:148K _st

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2STC5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5949 2STC5949 TO-264 Tube November 2008 Rev 4 1/8 www.st.com 8 Absolute maximum ratings 2STC5949 1 Absolute maximum ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 17 A ICM Collector peak current (tP < 5 ms) 34 A PTOT Total dissipation at Tc = 25C 220 W Tstg Storage te

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STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3? - 5.5A TO-220/FP/D2PAK/I2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP5NC50 500 V <1.5? 5.5A STP5NC50FP 500 V <1.5? 5.5A STB5NC50 500 V <1.5? 5.5A 3 STB5NC50-1 500 V <1.5? 5.5A 1 TYPICAL RDS(on) = 1.3? D2PAK TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I2PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP5NC50 STP5NC

1.35. stb8nc50.pdf Size:441K _st

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STB8NC50 N-CHANNEL 500V - 0.7? - 8A D2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STB8NC50 500V < 0.85 ? 8 A TYPICAL RDS(on) = 0.7? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 1 GATE CHARGE MINIMIZED DESCRIPTION D2PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 8A ID Drain Current (con

1.36. std2nc50.pdf Size:442K _st

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STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3? - 2.2A DPAK/IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V < 4 ? 2.2 A STD2NC50-1 500 V < 4 ? 2.2 A TYPICAL RDS(on) = 3 ? 3 3 EXTREMELY HIGH dv/dt CAPABILITY 1 2 100% AVALANCHE TESTED 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain

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STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2? - 3.5A TO-220/TO-220FP PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 ? 3.5 A STP4NC50FP 500 V < 2.7 ? 3.5 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area INTERNAL SCHEMATIC DIAGRAM figure of merit while keeping the device at the lead- ing edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP4NC50 STP4NC50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V

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STS8C5H30L N-channel 30 V, 0.018 ?, 8 A, P-channel 30 V, 0.045 ?, 5 A SO-8 low gate charge STripFET III MOSFET Features RDS(on) Type VDSS ID max STS8C5H30L(N-channel) 30 V < 0.022 ? 8 A STS8C5H30L(P-channel) 30 V < 0.055 ? 5 A Conduction losses reduced Switching losses reduced SO-8 Low threshold drive Standard outline for easy automated surface mount assembly Application Figure 1. Internal schematic diagram Switching applications Description The STS8C5H30L is a Power MOSFET realized with the latest development of STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Part number Marking Package Packaging STS8C5H30L S8C5H30L SO-8 Tape and reel Note: For the p-channel MOSFET actual polarity of volta

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STC5DNF30V N-channel 30 V, 0.027 ?, 5 A TSSOP8 2.7 V - driver STripFET Power MOSFET Features Type VDSS RDS(on) max ID < 0.031 ? ( @ 4.5 V ) STC5DNF30V 30V 5 A < 0.035 ? ( @ 2.7 V ) Ultra low threshold gate drive (2.7 V) Standard outline for easy automated surface TSSOP8 mount assembly Applications Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique single feature size D1 D2 strip-based process. The resulting transistor shows extremely high packing density for low on- S1 S2 resistance, rugged avalanche characteristics and S1 S2 less critical alignment steps therefore a G1 G2 remarkable manufacturing reproducibility. SC15210 Table 1. Device summary Order codes Marking Package Packaging STC5DNF30V 5DN3V TSSOP8 Tape and reel November 2009 Doc ID 12246 Rev 2 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STC5DNF30V Contents 1 E

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STC5NF30V N-channel 30V - 0.027? - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET General features Type VDSS RDS(on) ID < 0.031 ? ( @ 4.5 V ) STC5NF30V 30V 5A < 0.035 ? ( @ 2.7 V ) Ultra low threshold gate drive (2.7V) Standard outline for easy automated surface TSSOP8 mount assembly Description This Power MOSFET is the latest development of Internal schematic diagram STMicroelectronis unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications Switching application Order codes Part number Marking Package Packaging STC5NF30V C5NF30V TSSOP8 August 2006 Rev 2 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Contents STC5NF30V Contents 1 Electrical ratings . . . . . . . . . . . . .

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STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48? - 10A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NC50 500 V < 0.52 ? 10 A STP10NC50FP 500 V < 0.52 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Companys proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche INTERNAL SCHEMATIC DIAGRAM and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTO

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BC557B SMALL SIGNAL PNP TRANSISTOR Ordering Code Marking Package / Shipment BC557B BC557B TO-92 / Bulk BC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS BC547B TO-92 TO-92 Bulk Ammopack APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) -50 V VCEO Collector-Emitter Voltage (IB = 0) -45 V V Emitter-Base Voltage (I = 0) -5 V EBO C I Collector Current -100 mA C ICM Collector Peak Current (tp < 5 ms) -200 mA Ptot Total Dissipation at TC = 25 oC 500 mW o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 March 2003 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BC557B

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2STC5948 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5948 2STC5948 TO-3P Tube November 2008 Rev 4 1/8 www.st.com 8 Electrical ratings 2STC5948 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 250 V VCEO Collector-emitter voltage (IB = 0) 250 V VEBO Emitter-base voltage (IC = 0) 6 V IC Collector current 17 A ICM Collector peak current (tP < 5 ms) 34 A PTOT Total dissipation at Tc = 25 C 200 W Tstg Storage temper

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2STC5200 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5200 2STC5200 TO-264 Tube December 2007 Rev 2 1/9 www.st.com 9 Electrical ratings 2STC5200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A ICM Collector peak current 30 A Ptot Total dissipation at TC = 25C 150 W Tstg Storage temperature -55 to 150 C

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging 2SC5200 2SC5200 TO-264 Tube September 2009 Doc ID 16310 Rev 1 1/8 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8 change without notice. Electrical ratings 2SC5200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A

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STC5NF20V N-channel 20V - 0.030? - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS(on) ID < 0.040 ? (@ 4.5 V) STC5NF20V 20V 5A < 0.045 ? (@ 2.7 V) Ultra low threshold gate drive (2.7V) Standard outline for easy automated surface TSSOP8 mount assembly Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order code Marking Package Packaging STC5NF20V 5N20V TSSOP8 Tape & reel October 2007 Rev 6 1/12 www.st.com 12 Obsolete Product(s) - Obsolete Product(s) Contents STC5NF20V Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . .

1.47. ste53nc50.pdf Size:278K _st

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STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMeshII MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 53 A ID Drain Curren

1.48. 2stc5242.pdf Size:183K _st

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2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor Figure 1. Internal schematic diagram shows good gain linearity behaviour. Table 1. Device summary Order code Marking Package Packaging 2STC5242 2STC5242 TO-3P Tube July 2008 Rev 3 1/9 www.st.com 9 Electrical ratings 2STC5242 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCBO Collector-base voltage (IE = 0) 230 V VCEO Collector-emitter voltage (IB = 0) 230 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 15 A ICM Collector peak current 30 A Ptot Total dissipation at TC = 25C 150 W Tstg Storage temperature -55 to 150 C TJ

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STW14NC50 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STW14NC50 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 14 A ID Drain

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STU13NC50 N-CHANNEL 500V - 0.31? - 13A Max220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STU13NC50 500V < 0.4 ? 13 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 2 GATE CHARGE MINIMIZED 1 Max220 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLIES (UPS) DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 13 A ID Drain Current (continuos) at

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STU16NC50 N-CHANNEL 500V - 0.22? - 16A Max220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STU16NC50 500V < 0.27? 16 A TYPICAL RDS(on) = 0.22? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 2 GATE CHARGE MINIMIZED 1 Max220 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLIES (UPS) DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 16 A ID Drain Current (continuos) at

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STW20NC50 N-CHANNEL 500V - 0.22? - 18.4A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STW20NC50 500V < 0.27? 18.4A TYPICAL RDS(on) = 0.22? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION The PowerMESHII is the evolution of the first TO-247 generation of MESH OVERLAY. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS SWITH MODE LOW POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage 30 V ID Drain Current (continuos) at TC = 25C 18.4

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2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE

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2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 750 V Emitter-Base Voltage VEBO 5 V DC IC 17 Collector Current A JEDEC ? Pulse ICP 34 Base Current IB 8.5 A JEITA ? Collector Power Dissipation PC 75 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Emitter-Base Breakdown Voltage V (BR) C

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1.57. 2sc5785.pdf Size:182K _toshiba

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2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2.0 Collector current A Pulse ICP 3.5 Base current IB 200 mA JEDEC ? t = 10 s PC 2.0 Collector power W JEITA SC-62 dissipation (Note 1) DC 1.0 TOSHIBA 2-5K1A Junction temperature Tj 150 C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 C Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Cond

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2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (No

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2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 22 Collector current A Pulse ICP 44 Base current IB 11 A Collector power dissipation PC 200 W Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA ? TOSHIBA 2-21F2A Weight: 9.75 g (typ.) Electrical Characteristics (Tc = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 10 A Collector-emitter breakdown voltage V(BR) CEO IC = 10 mA, IB = 0

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2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 9 JEDEC ? Collector Current A Pulse ICP 18 JEITA ? Base Current IB 4.5 A TOSHIBA 2-16E3A Collector Power Dissipation PC 50 W Weight: 5.5 g (typ.) Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC =

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2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 2000 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 2000 V Collector-Emitter Voltage VCEO 900 V Emitter-Base Voltage VEBO 5 V DC IC 22 Collector Current A Pulse ICP 44 Base Current IB 11 A Collector Power Dissipation PC 220 W JEDEC ? Junction Temperature Tj 150 C JEITA ? Storage Temperature Range Tstg -55~150 C TOSHIBA 2-21F2A ELECTRICAL CHARACTERISTICS (Tc = 25C) Weight: 9.75 g (typ.) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 2000 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector-Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 900 ? ? V hFE (1) VCE = 5 V, IC = 2 A 1

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2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 10 mA Base current IB 5 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 7 mA 9 ? ? GHz ?S21e?2 (1) VCE = 3 V, IC = 7 mA, f = 1 GHz 12.5 15.5 ? Insertion gain dB ?S21e?2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 7 10 ? NF (1) VCE = 3 V, IC = 3 mA, f = 1 GHz ? 0.9 1.8 Noise figure dB NF (2)

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1.67. 2sc5316.pdf Size:125K _toshiba

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2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz ? 13 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 4.5 7.5 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.4 ? Noise figure dB NF (2) VCE = 6 V,

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2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ? 7 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.1 2.5 Noise figure dB NF (2) VCE = 8 V,

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2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C 1.Base(B) Storage temperature range Tstg -55 to 125 C 2.Emitter1(E1) Note: Using continuously under heavy loads (e.g. the application of high 3.Collector(C) temperature/current/voltage and the significant change in SMQ 4.Emitter(E2) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC ? operating temperature/current/voltage, etc.) are within the JEITA ? absolute maximum ratings.

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2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz ? 17 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ? NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 5 V

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2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V DC IC 28 Collector Current A JEDEC ? Pulse ICP 56 JEITA ? Base Current IB 14 A Collector Power Dissipation PC 220 W TOSHIBA 2-21F2A Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Emitter-Base Breakdown Voltage V (BR) CE

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2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 15 Collector Current A Pulse ICP 30 JEDEC ? Base Current IB 7.5 A JEITA ? Collector Power Dissipation PC 180 W TOSHIBA 2-21F2A Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 10 A Emitter-Base Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 600 ? ? V hFE (1) V

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2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 700 V Emitter-Base Voltage VEBO 5 V DC IC 10 Collector Current A JEDEC ? Pulse ICP 20 Base Current IB 5 A JEITA ? Collector Power Dissipation PC 50 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector - Emitter Breakdown Volt

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2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A JEDEC ? Pulse ICP 7 JEITA ? Base current IB 0.4 A TOSHIBA 2-3S1A DC 0.8 Collector power W PC (Note 1) dissipation t = 10 s 1.25 Weight: 0.01 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/curr

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2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEX 15 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A Pulse ICP 7 JEDEC ? Base current IB 400 mA JEITA SC-62 DC PC 1.0 Collector power W TOSHIBA 2-5K1A dissipation (Note) t = 10 s 2.5 Weight: 0.05 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Char

1.85. 2sc5386.pdf Size:317K _toshiba

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2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 8 Collector Current A JEDEC ? Pulse ICP 16 JEITA ? Base Current IB 4 A Collector Power Dissipation PC 50 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0

1.86. 2sc5263.pdf Size:103K _toshiba

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1.87. 2sc5387.pdf Size:318K _toshiba

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2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 10 JEDEC ? Collector Current A Pulse ICP 20 JEITA ? Base Current IB 5 A TOSHIBA 2-16E3A Collector Power Dissipation PC 50 W Weight: 5.5 g (typ.) Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC =

1.88. 2sc5319.pdf Size:169K _toshiba

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2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2K1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 15 mA 13 16 ? GHz ?S21e?2 (1) VCE = 3 V, IC = 15 mA, f = 1 GHz 14.5 17 ? Insertion gain dB ?S21e?2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 8.5 11.5 ? NF (1) VCE = 3 V, IC = 5 mA, f = 1 GHz ? 0.9 1.8 Noise figure dB NF (2) VC

1.89. 2sc5150.pdf Size:210K _toshiba

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1.90. 2sc5692.pdf Size:167K _toshiba

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2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) High-speed switching: t = 120 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 2.5 Collector current A Pulse ICP 4.0 JEDEC ? Base current IB 250 mA JEITA ? DC PC 625 Collector power TOSHIBA 2-3S1A mW dissipation (Note) t = 10 s 1000 Weight: 0.01 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = =

1.91. 2sc5784.pdf Size:178K _toshiba

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2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Collector current A Pulse ICP 2.5 Base current IB 150 mA JEDEC ? t = 10 s PC 750 Collector power JEITA ? mW dissipation (Note 1) DC 500 TOSHIBA 2-3S1A Junction temperature Tj 150 C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 150 C Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbo

1.92. 2sc5098.pdf Size:298K _toshiba

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2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2K1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz 12.5 15.5 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 7 10 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.3 2.5 Noise figure dB NF (2) VCE = 6 V, I

1.93. 2sc5065.pdf Size:466K _toshiba

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2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-3E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz ? 17 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ? NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 5 V,

1.94. 2sc5254.pdf Size:177K _toshiba

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2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 20 mA 9 12 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 20 mA, f = 1 GHz 11.5 14.5 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 20 mA, f = 2 GHz 5.5 8.5 ? NF (1) VCE = 5 V, IC = 5 mA, f = 1 GHz ? 1.1 ? Noise figure dB NF (2) V

1.95. 2sc5266.pdf Size:164K _toshiba

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1.96. 2sc5148.pdf Size:205K _toshiba

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1.97. 2sc5548.pdf Size:230K _toshiba

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2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 370 V CEO High DC current gain: h = 60 (min) (I = 0.2 A) FE C Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 370 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 4 Base current IB 0.5 A JEDEC ? Ta = 25C 1.0 Collector power PC W JEITA ? dissipation Tc = 25C 15 TOSHIBA 2-7B1A Junction temperature Tj 150 C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 C JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC5548 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. M

1.98. 2sc5108.pdf Size:242K _toshiba

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2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note 2)

1.99. 2sc5171.pdf Size:113K _toshiba

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2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Ta = 25C 2.0 Collector power PC W dissipation Tc = 25C 20 JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 180 V, IE = 0 ? ? 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 5.0 A Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 180 ? ? V hFE (1) VCE = 5 V, IC = 0.1 A 100 ? 320 DC curre

1.100. 2sc5548a.pdf Size:230K _toshiba

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2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 40 (min) (I = 0.2 A) FE C Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 4 Base current IB 0.5 A JEDEC ? Ta = 25C 1.0 Collector power PC W JEITA ? dissipation Tc = 25C 15 TOSHIBA 2-7B1A Junction temperature Tj 150 C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 C JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC5548A Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ

1.101. 2sc5093.pdf Size:300K _toshiba

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2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2K1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 12 15 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz 6.5 9.5 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.4 2.5 Noise figure dB NF (2) VCE = 8

1.102. 2sc5355.pdf Size:151K _toshiba

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2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 20 (min) FE Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 5 JEDEC ? Collector current A Pulse ICP 7 JEITA ? Base current IB 1 A TOSHIBA 2-7B5A Ta = 25C 1.5 Collector power Weight: 0.36 g (typ.) PC W dissipation Tc = 25C 25 Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C JEDEC ? JEITA ? TOSHIBA 2-7B6A Weight: 0.36 g (typ.) 1 2002-07-23 2SC5355 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-of

1.103. 2sc5255.pdf Size:180K _toshiba

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2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Collector current IC 40 mA Base current IB 20 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 20 mA 9 12 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 20 mA, f = 1 GHz 11.5 14.5 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 20 mA, f = 2 GHz 5.5 8.5 ? NF (1) VCE = 5 V, IC = 5 mA, f = 1 GHz ? 1.1 ? Noise figure dB NF (2) V

1.104. 2sc5460.pdf Size:196K _toshiba

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1.105. 2sc5376.pdf Size:260K _toshiba

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2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC ? Storage temperature range Tstg -55~125 C JEITA ? TOSHIBA 2-2H1A Marking Weight: 2.4 mg (typ.) 1 2003-03-27 2SC5376 Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 A hFE DC c

1.106. 2sc5088.pdf Size:481K _toshiba

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2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2K1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 18 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 10

1.107. 2sc5368.pdf Size:187K _toshiba

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1.108. 2sc5930.pdf Size:142K _toshiba

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2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.3 ?s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEX 600 V Collector-emitter voltage VCEO 285 V Emitter-base voltage VEBO 7 V DC IC 1.0 Collector current A Pulse ICP 2.0 Base current IB 0.5 A JEDEC ? Collector power Ta = 25C PC 1.0 W JEITA ? dissipation Junction temperature Tj 150 C TOSHIBA 2-7D101A Storage temperature range Tstg -55 to 150 C Weight: 0.2 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c

1.109. 2sc5242.pdf Size:122K _toshiba

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2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 130 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-16C1A Electrical Characteristics (Tc = 25C) Weight: 4.7 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ? ? 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 5.0 A Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ? ? V hFE (1) VC

1.110. 2sc5092.pdf Size:475K _toshiba

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2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 12 15 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz 6.5 9.5 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.4 2.5 Noise figure dB NF (2) VCE = 8

1.111. 2sc5459.pdf Size:186K _toshiba

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1.112. 2sc5422.pdf Size:316K _toshiba

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2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 15 Collector Current A JEDEC ? Pulse ICP 30 JEITA ? Base Current IB 7.5 A Collector Power Dissipation PC 200 W TOSHIBA 2-21F2A Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Emitter-Base Breakdown Voltage V (BR) CEO

1.113. 2sc5376ct_100418.pdf Size:137K _toshiba

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2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Applications 0.60.05 0.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) 3 @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) 1 2 Absolute Maximum Ratings (Ta = 25C) 0.350.02 0.050.03 Characteristics Symbol Rating Unit 0.150.03 Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V 1.BASE Collector current IC 400 mA 2.EMITTER CST3 Base current IB 50 mA 3.COLLECTOR Collector power dissipation PC (Note1) 100 mW JEDEC ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-1J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.75 mg (typ.) temperature, etc.) may cause this produ

1.114. 2sc5091ft.pdf Size:125K _toshiba

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2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ? 7 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.1 2.5 Noise figure dB NF (2) VCE = 8 V,

1.115. hn3c51f_071122.pdf Size:289K _toshiba

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HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA 1.COLLECTOR1 (C1) 2.EMITTER1 (E1) Collector power dissipation PC* 300 mW 3.COLLECTOR2 (C2) Junction temperature Tj 150 C 4.EMITTER2 (E2) 5.BASE2 (B2) Storage temperature range Tstg -55~150 C 6.BASE1 (B1) Note: Using continuously under heavy loads (e.g. the application of high JEDEC ? temperature/current/voltage and the significant change in JEITA ? temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3N1B reliabil

1.116. 2sc5588.pdf Size:331K _toshiba

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2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V DC IC 15 Collector Current A JEDEC ? Pulse ICP 30 Base Current IB 7.5 A JEITA ? Collector Power Dissipation PC 75 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Emitter-Base

1.117. 2sc5111.pdf Size:245K _toshiba

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2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note 2)

1.118. 2sc5464ft.pdf Size:125K _toshiba

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2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 60 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 15 mA 5 7 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 15 mA, f = 500 MHz ? 17.5 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 15 mA, f = 1 GHz 8 12 ? NF (1) VCE = 8 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 8

1.119. 2sc5143.pdf Size:191K _toshiba

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1.120. 2sc5376f.pdf Size:145K _toshiba

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2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 400 mA Base current IB 50 mA Collector power dissipation PC 100 mW JEDEC ? Junction temperature Tj 125 C JEITA ? Storage temperature range Tstg -55 to 125 C TOSHIBA 2-2HA1A Marking Equivalent Circuit (top view) Type Name hFE Classification F A 1 2002-01-16 2SC5376F Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off

1.121. 2sc5260.pdf Size:220K _toshiba

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1.122. 2sc5353.pdf Size:207K _toshiba

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1.123. 2sc5755.pdf Size:168K _toshiba

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2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2 Collector current A Pulse ICP 3.5 Base current IB 200 mA JEDEC ? DC 500 Collector power JEITA ? PC (Note) mW dissipation t = 10 s 750 TOSHIBA 2-3S1C Junction temperature Tj 150 C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut

1.124. 2sc5261ft.pdf Size:103K _toshiba

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1.125. 2sc5360.pdf Size:116K _toshiba

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1.126. 2sc5886a.pdf Size:144K _toshiba

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2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mm DC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V VCEX 100 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 9 V DC IC 5 Collector current A Pulse ICP 10 Base current IB 0.5 A JEDEC ? Ta = 25C 1 Collector power JEITA ? Pc W dissipation Tc = 25C 20 TOSHIBA 2-7J1A Junction temperature Tj 150 C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly ev

1.127. 2sc5091.pdf Size:469K _toshiba

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2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ? 7 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.1 2.5 Noise figure dB NF (2) VCE = 8 V, IC

1.128. 2sc5976.pdf Size:178K _toshiba

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2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 3 2 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEX 50 V 1.Base Collector-emitter voltage VCEO 30 V 2.Emitter 3.Collector Emitter-base voltage VEBO 6 V DC IC 3.0 Collector current A JEDEC ? Pulse ICP 5.0 JEITA ? Base current IB 0.3 A TOSHIBA 2-3S1A Collector power dissipation (t=10s) 1.00 PC (Note.1) W Total collector power dissipation (DC) 0.625 Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

1.129. 2sc5232.pdf Size:270K _toshiba

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2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C JEDEC TO-236MOD Storage temperature range Tstg -55~125 C JEITA SC-59 TOSHIBA 2-3F1A Marking Weight: 0.012 g (typ.) 1 2003-03-27 2SC5232 Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 A hFE DC

1.130. 2sc5154.pdf Size:198K _toshiba

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1.131. 2sc5354.pdf Size:129K _toshiba

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1.132. 2sc5106.pdf Size:238K _toshiba

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2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note

1.133. 2sc5464.pdf Size:124K _toshiba

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2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 60 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 15 mA 5 7 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 15 mA, f = 500 MHz ? 17.5 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 15 mA, f = 1 GHz 8 12 ? NF (1) VCE = 8 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 8 V, IC

1.134. 2sc5259.pdf Size:182K _toshiba

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1.135. 2sc5446.pdf Size:340K _toshiba

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2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 18 Collector Current A JEDEC ? Pulse ICP 36 JEITA ? Base Current IB 9 A Collector Power Dissipation PC 200 W TOSHIBA 2-21F2A Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 10 A Emitter-Base Breakdown Voltage V (BR) CEO

1.136. 2sc5089.pdf Size:465K _toshiba

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2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 20 mA Collector current IC 40 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 20 mA 7 10 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 20 mA, f = 2 GHz ? 7 ? NF (1) VCE = 8 V, IC = 5 mA, f = 1 GHz ? 1.1 2.5 Noise figure dB NF (2) VCE = 8 V,

1.137. 2sc5233.pdf Size:280K _toshiba

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2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC ? Storage temperature range Tstg -55~125 C JEITA SC-70 TOSHIBA 2-2E1A Marking Weight: 0.006 g (typ.) 1 2003-03-27 2SC5233 Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 A hFE DC curre

1.138. 2sc5590.pdf Size:297K _toshiba

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2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 5 V DC IC 16 Collector Current A JEDEC ? Pulse ICP 32 JEITA ? Base Current IB 8 A Collector Power Dissipation PC 200 W TOSHIBA 2-21F2A Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector-Em

1.139. 2sc5717.pdf Size:411K _toshiba

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2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 21 Collector current A Pulse ICP 42 Base current IB 10.5 A JEDEC ? Collector power dissipation PC 75 W Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55~150 C TOSHIBA 2-16E3A Weight: 5.5 g (typ.) Electrical Characteristics (Tc = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 10 A Collecto

1.140. 2sc5563.pdf Size:116K _toshiba

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1.141. 2sc5324.pdf Size:123K _toshiba

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1.142. 2sc5256.pdf Size:164K _toshiba

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1.143. 2sc5257.pdf Size:126K _toshiba

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1.144. 2sc5748.pdf Size:321K _toshiba

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2SC5748 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5748 Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = 2000 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t = 0.15 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 2000 V Collector-emitter voltage VCEO 900 V Emitter-base voltage VEBO 5 V DC IC 16 Collector current A Pulse ICP 32 Base current IB 8 A Collector power dissipation PC 210 W Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA ? TOSHIBA 2-21F2A Weight: 9.75 g (typ.) Electrical Characteristics (Tc = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 2000 V, IE = 0 ? ? 1 mA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector-emitter breakdown voltage V(BR) CEO IC = 10 mA, IB = 0 900 ? ? V hFE (1) VC

1.145. 2sc5094.pdf Size:296K _toshiba

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2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz ? 13 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 4.5 7.5 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.4 ? Noise figure dB NF (2) VCE = 6 V,

1.146. 2sc5107.pdf Size:241K _toshiba

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2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (No

1.147. 2sc5720.pdf Size:156K _toshiba

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2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base voltage VEBO 7 V DC IC 5 Collector current A Pulsed ICP 9 Collector power dissipation PC (Note1) 550 mW Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEDEC ? Note1: When a device is mounted on a glass epoxy board JEITA ? (35 mm ? 30 mm ? 1mm) TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 A Collector-Emitter breakdown voltage V(BR)CEO

1.148. 2sc5266a.pdf Size:181K _toshiba

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1.149. 2sc5095.pdf Size:295K _toshiba

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2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz ? 13 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 4.5 7.5 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.4 ? Noise figure dB NF (2) VCE = 6 V,

1.150. 2sc5109.pdf Size:242K _toshiba

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2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (Note

1.151. 2sc5948_061116.pdf Size:152K _toshiba

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2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Collector current IC 12 A Base current IB 1.2 A Collector power dissipation PC 200 W Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ? temperature/current/voltage and the significant change in JEITA ? temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-16C1A operating temperature/current/voltage, etc.) are within the Weight: 4.7 g (typ.) absolute maximum ratings. Please design the appropriate reli

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1.158. 2sc5439.pdf Size:123K _toshiba

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2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications Unit: mm High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Excellent switching times: tr = 0.2 s (typ.), tf = 0.15 s (typ.) High collector breakdown voltage: VCEO = 450 V Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 1000 V Collector-emitter voltage VCEO 450 V Emitter-base voltage VEBO 9 V DC IC 8 Collector current A Pulse ICP 16 JEDEC ? Base current IB 1 A JEITA SC-67 Ta = 25C 2.0 Collector power TOSHIBA 2-10R1A PC W dissipation Tc = 25C 30 Weight: 1.7 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C 1 2004-07-26 2SC5439 Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1000 V, IE = 0 ? ? 100 A Emitter cut-off c

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1.160. 2sc5317ft.pdf Size:125K _toshiba

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2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 15 mA 9 ? ? GHz ?S21e?2 (1) VCE = 3 V, IC = 15 mA, f = 1 GHz 12 15 ? Insertion gain dB ?S21e?2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 6 9 ? NF (1) VCE = 3 V, IC = 5 mA, f = 1 GHz ? 0.9 1.

1.161. 2sc5738.pdf Size:160K _toshiba

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2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 3.5 Collector current A Pulse ICP 6.0 Base current IB 350 mA JEDEC ? DC PC 625 Collector power JEITA ? mW dissipation (Note) t = 10 s 1000 TOSHIBA 2-3S1A Junction temperature Tj 150 C Weight: 0.01 g (typ.) Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol T

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2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Electrical Characteristics (Ta = Weight: 0.0022 g (typ.) = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 4 6 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 7 11 ? dB Output capacitance Cob ? 0.7 ? pF VCB = 5 V, IE = 0, f = 1 MHz (N

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2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm HDTV, DIGITAL TV, PROJECTION TV High Voltage : V = 1700 V CBO Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 750 V Emitter-Base Voltage VEBO 5 V DC IC 23 Collector Current A Pulse ICP 46 Base Current IB 11.5 A Collector Power Dissipation PC 210 W JEDEC ? Junction Temperature Tj 150 C JEITA ? Storage Temperature Range Tstg -55~150 C TOSHIBA 2-21F2A Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Min Typ. Max UNIT Collector Cut-off Current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector - Emitter Breakdown Voltage V (BR) CEO IC = 10 mA, IB = 0 750 ? ? V hFE (1)

1.166. 2sc5411.pdf Size:311K _toshiba

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2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 14 JEDEC ? Collector Current A Pulse ICP 28 JEITA ? Base Current IB 7 A TOSHIBA 2-16E3A Collector Power Dissipation PC 60 W Weight: 5.5 g (typ.) Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC =

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1.169. 2sc5208.pdf Size:167K _toshiba

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2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching: tr = 1.0 ?s (max) ,tf = 1.5 ?s (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current A Pulse ICP 1.5 JEDEC ? Base current IB 0.5 A JEITA ? Collector power dissipation PC 1.3 W TOSHIBA 2-8M1A Junction temperature Tj 150 C Weight: 0.55 g (typ.) Storage temperature range Tstg -55~150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditio

1.170. 2sc5339.pdf Size:335K _toshiba

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2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 7 Collector Current A Pulse ICP 14 JEDEC ? Base Current IB 3.5 A JEITA ? Collector Power Dissipation PC 50 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C EQUIVALENT CIRCUIT 1 2001-08-21 2SC5339 ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB =

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HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V 1.COLLECTOR1 (C1) 2.EMITTER1 (E2) Emitter-base voltage VEBO 5 V 3.COLLECTOR2 (C2) Collector current IC 150 mA 4.EMITTER2 (E2) 5.BASE2 (B2) Base current IB 30 mA 6.BASE1 (B1) Collector power dissipation PC* 200 mW Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA ? Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1A high temperature/current/voltage and the significant change in

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1.179. 2sc5716.pdf Size:304K _toshiba

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2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1700 V Collector-emitter voltage VCEO 700 V Emitter-base voltage VEBO 5 V DC IC 8 Collector current A Pulse ICP 16 Base current IB 4 A Collector power dissipation PC 55 W Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA ? TOSHIBA 2-16E3A Equivalent Circuit 2. Collector Weight: 5.5 g (typ.) 1. Base 40 ? (typ.) 3. Emitter Electrical Characteristics (Tc = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 1700 V, IE = 0 ? ? 1 mA Emitter cut-off current IEBO VEB = 5 V, IC

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2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz ? 17 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ? NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 5 V

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2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 10

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2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 8 Collector Current A Pulse ICP 16 JEDEC ? Base Current IB 4 A JEITA ? Collector Power Dissipation PC 50 W TOSHIBA 2-16E3A Junction Temperature Tj 150 C Weight: 5.5 g (typ.) Storage Temperature Range Tstg -55~150 C EQUIVALENT CIRCUIT 1 2001-08-20 2SC5280 ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 15

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2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC = 10 mA 5 7 ? GHz ?S21e?2 (1) VCE = 5 V, IC = 10 mA, f = 500 MHz ? 17 ? Insertion gain dB ?S21e?2 (2) VCE = 5 V, IC = 10 mA, f = 1 GHz 8.5 12 ? NF (1) VCE = 5 V, IC = 3 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 5 V,

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2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times: tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage: V = 400 V CEO Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current A Pulse ICP 1.5 JEDEC ? Base current IB 0.5 A JEITA ? Ta = 25C 1.0 Collector power PC W dissipation TOSHIBA 2-7B1A Tc = 25C 10 Junction temperature Tj 150 C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 C 1 2002-07-23 2SC5458 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 480 V, IE = 0

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2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE

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2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 5 Collector current A Pulse ICP 10 JEDEC ? Base current IB 0.5 A JEITA SC-64 Ta = 25C 1 Collector power Pc W dissipation Tc = 25C 20 TOSHIBA 2-7J1A Junction temperature Tj 150 C Weight: 0.36 g (typ.) Storage temperature range Tstg -55 to 150 C Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ? ? 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ? ? 100 nA Colle

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2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 10 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 1 V, IC = 0 ? ? 0.1 A hFE DC current gain VCE = 5 V, IC = 5 mA 80 ? 240 (Note 1) Transition frequency fT VCE = 5 V, IC = 5 mA 3 5 ? GHz Insertion gain ?S21e?2 VCE = 5 V, IC = 5 mA, f = 1 GHz 6 10 ? dB Output capacitance Cob ? 0.9 ? pF VCB = 5 V, IE = 0, f = 1 MHz (

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2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 16.5 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE

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2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 1.5 Collector current A Pulse ICP 2.5 Base current IB 150 mA JEDEC ? t = 10 s PC 2.0 Collector power W dissipation JEITA SC-62 (Note 1) DC 1.0 TOSHIBA 2-5K1A Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Weight: 0.05 g (typ.) Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Characteristics Symbo

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2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 60 mA Base current IB 30 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2E1A Weight: 0.006 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 8 V, IC = 15 mA 5 7 ? GHz ?S21e?2 (1) VCE = 8 V, IC = 15 mA, f = 500 MHz ? 17.5 ? Insertion gain dB ?S21e?2 (2) VCE = 8 V, IC = 15 mA, f = 1 GHz 8 12 ? NF (1) VCE = 8 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 8 V, IC

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2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base Voltage VEBO 5 V DC IC 20 Collector Current A JEDEC ? Pulse ICP 40 JEITA ? Base Current IB 10 A TOSHIBA 2-21F2A Collector Power Dissipation PC 200 W Junction Temperature Tj 150 C Weight: 9.75 g (typ.) Storage Temperature Range Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 10 A Emitter-Base Breakdown Voltage V (BR) CE

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1.196. 2sc5176.pdf Size:235K _toshiba

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1.197. 2sc5810.pdf Size:177K _toshiba

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2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) High-speed switching: t = 85 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 1.0 Collector current A Pulse ICP 2.0 JEDEC ? Base current IB 0.1 A JEITA SC-62 DC 2.0 Collector power PC (Note) W dissipation TOSHIBA 2-5K1A t = 10 s 1.0 Weight: 0.05 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-of

1.198. 2sc5703.pdf Size:166K _toshiba

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2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A Pulse ICP 7 JEDEC ? Base current IB 400 mA JEITA ? DC PC 800 Collector power TOSHIBA 2-3S1A mW dissipation (Note) t = 10 s 1250 Weight: 0.01 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Chara

1.199. 2sc5048.pdf Size:209K _toshiba

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1.200. 2sc5376fv_071101.pdf Size:155K _toshiba

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2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V 1.BASE Collector current IC 400 mA VESM 2.EMITTER Base current IB 50 mA 3.COLLECTOR Collector power dissipation PC 150 * mW JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55~150 C TOSHIBA 2-1L1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.5 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

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1.202. 2sc5684.pdf Size:126K _toshiba

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1.203. 2sc5200.pdf Size:121K _toshiba

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2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 150 W (Tc = 25C) Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-21F1A Electrical Characteristics (Tc = 25C) Weight: 9.75 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ? ? 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 5.0 A Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ? ? V hFE (1) VCE = 5 V,

1.204. 2sc5087.pdf Size:476K _toshiba

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2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ? GHz ?S21e?2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz ? 18 ? Insertion gain dB ?S21e?2 (2) VCE = 10 V, IC = 20 mA, f = 1 GHz 9.5 13 ? NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ? 1 ? Noise figure dB NF (2) VCE = 10

1.205. hn4c51j_071101.pdf Size:293K _toshiba

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HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V 1.EMITTER1 (E1) 2.BASE (B) Collector current IC 100 mA 3.EMITTER2 (E2) 4.COLLECTOR2 (C2) Base current IB 20 mA 5.COLLECTOR1 (C1) Collector power dissipation PC* 300 mW Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55~150 C JEITA ? TOSHIBA 2-3L1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.014g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause thi

1.206. 2sc5714.pdf Size:166K _toshiba

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2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEX 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current A Pulse ICP 7 JEDEC ? Base current IB 400 mA JEITA SC-62 DC PC 1.0 Collector power W dissipation TOSHIBA 2-5K1A (Note) t = 10 s 2.5 Weight: 0.05 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Electrical Characteristics (Ta = = 25C) = = Charac

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2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 Collector-emitter voltage V VCEO 50 Emitter-base voltage VEBO 7 V DC IC 3.0 Collector current A JEDEC ? Pulse ICP 5.0 JEITA SC-62 Base current IB 0.3 A DC PC 1.0 TOSHIBA 2-5K1A Collector power W dissipation (Note 1) t = 10 s 2.5 Weight: 0.05 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/

1.208. 2sc5322.pdf Size:121K _toshiba

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2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 10 mA Base current IB 5 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 7 mA 9 ? ? GHz ?S21e?2 (1) VCE = 3 V, IC = 7 mA, f = 1 GHz 12.5 15.5 ? Insertion gain dB ?S21e?2 (2) VCE = 3 V, IC = 7 mA, f = 2 GHz 7 10 ? NF (1) VCE = 3 V, IC = 3 mA, f = 1 GHz ? 0.9 1.8 Noise figure dB NF (2) VCE = 3 V, IC

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1.210. 2sc5028.pdf Size:218K _toshiba

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1.211. 2sc5097.pdf Size:473K _toshiba

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2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-3J1C Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz 12.5 15.5 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 7 10 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.3 2.5 Noise figure dB NF (2) VCE = 6 V, I

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1.213. 2sc5465.pdf Size:146K _toshiba

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2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEO Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 0.8 Collector current A Pulse ICP 1.5 Base current IB 0.2 A JEDEC ? Ta = 25C 1.0 Collector power PC W dissipation JEITA ? Tc = 25C 20 Junction temperature Tj 150 C TOSHIBA 2-7B1A Storage temperature range Tstg -55 to 150 C Weight: 0.36 g (typ.) 1 2002-07-23 2SC5465 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 800 V, IE = 0 ? ? 100 A Emitte

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2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltage VCEO 140 V Emitter-base voltage VEBO 5 V Collector current IC 10 A Base current IB 1 A Collector power dissipation PC 100 W (Tc = 25C) JEDEC ? Junction temperature Tj 150 C JEITA ? Storage temperature range Tstg -55 to 150 C TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

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2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage: V = 800 V CEO High DC current gain: h = 15 (min) (I = 0.15 A) FE C Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 3 JEDEC ? Collector current A Pulse ICP 5 JEITA ? Base current IB 1 A TOSHIBA 2-7B5A Ta = 25C 1.5 Collector power Weight: 0.36 g (typ.) PC W dissipation Tc = 25C 25 Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEDEC ? JEITA ? TOSHIBA 2-7B6A Weight: 0.36 g (typ.) 1 2002-08-13 2SC5356 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max

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2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base current IB 7 mA Collector current IC 15 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C Storage temperature range Tstg -55~125 C JEDEC ? JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 6 V, IC = 7 mA 7 10 ? GHz ?S21e?2 (1) VCE = 6 V, IC = 7 mA, f = 1 GHz ? 13 ? Insertion gain dB ?S21e?2 (2) VCE = 6 V, IC = 7 mA, f = 2 GHz 4.5 7.5 ? NF (1) VCE = 6 V, IC = 3 mA, f = 1 GHz ? 1.4 ? Noise figure dB NF (2) VCE = 6 V, IC =

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2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collector current IC 20 mA Base current IB 10 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 C JEDEC ? Storage temperature range Tstg -55~125 C JEITA ? TOSHIBA 2-2H1A Weight: 2.4 mg (typ.) Microwave Characteristics (Ta = = 25C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 3 V, IC = 15 mA 9 ? ? GHz ?S21e?2 (1) VCE = 3 V, IC = 15 mA, f = 1 GHz 12 15 ? Insertion gain dB ?S21e?2 (2) VCE = 3 V, IC = 15 mA, f = 2 GHz 6 9 ? NF (1) VCE = 3 V, IC = 5 mA, f = 1 GHz ? 0.9 1.8 Noise figure

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1.221. 2sc5359.pdf Size:121K _toshiba

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2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 180 W (Tc = 25C) Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-21F1A Electrical Characteristics (Tc = 25C) Weight: 9.75 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 230 V, IE = 0 ? ? 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 5.0 A Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ? ? V hFE (1) VCE = 5 V, IC =

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1.223. 2sc5949.pdf Size:255K _toshiba

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2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation PC 220 W Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C JEDEC ? JEITA ? TOSHIBA 2-21F1A Weight: 9.75 g (typ.) 1 2005-07-27 2SC5949 Electrical Characteristics (Tc = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit Collector cut-off current ICBO VCB = 200 V, IE = 0 ? ? 5.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 5.0 A Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 200 ? ? V hFE (1) VCE = 5 V, IC = 1 A 55 ? 160 DC current gain (Note 1) hFE (2) VCE = 5 V, IC = 8 A 35 60 ? Collector-emitte

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2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base voltage VEBO 7 V DC IC 5 Collector current A Pulsed ICP 9 Collector power dissipation PC (Note1) 550 mW Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55 to 150 C JEITA ? Note 1: When a device is mounted on a glass epoxy board (35 mm ? 30 mm ? 1mm) TOSHIBA 2-4E1A Weight: 0.13 g Electrical Characteristics (Ta = = 25C) = = Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB = 15 V, IE = 0 ? ? 0.1 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 ? ? 0.1 A Collector-Emitter breakdown voltage V(BR)CEO IC =

1.225. 2sc5589.pdf Size:298K _toshiba

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2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 750 V Emitter-Base Voltage VEBO 5 V DC IC 18 Collector Current A Pulse ICP 36 Base Current IB 9 A JEDEC ? Collector Power Dissipationc PC 200 W JEITA ? Junction Temperature Tj 150 C TOSHIBA 2-21F2A Storage Temperature Range Tstg -55~150 C Weight: 9.75 g (typ.) ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Collector Cut-off Current ICBO VCB = 1500 V, IE = 0 ? ? 1 mA Emitter Cut-off Current IEBO VEB = 5 V, IC = 0 ? ? 100 A Collector-Emitter Breakdown Voltage V (B

1.226. ttc5200_en_datasheet_090713.pdf Size:190K _toshiba2

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TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 0 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A 1.BASE 2.COLLECTOR(HEAT SINK) Base current IB 1.5 A 3.EMITTER Collector power dissipation (Tc=25C) PC 150 W Junction temperature Tj 150 C JEDEC ? Storage temperature range Tstg -55 to 150 C JEITA ? TOSHIBA 2-21F1A Weight: 9.75 g (typ) Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.

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2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm HDTV, DIGITAL TV, PROJECTION TV High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 1.5 V (Max) High Speed : tf(2) = 0.1 μs (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter Voltage VCEO 750 V Emitter-Base Voltage VEBO 5 V DC IC 22 Collector Current A Pulse ICP 44 Base Current IB 11 A Collector Power Dissipation PC 200 W JEDEC ― Junction Temperature Tj 150 °C JEITA ― Storage Temperature Range Tstg -55~150 °C TOSHIBA 2-21F2A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/cur

1.228. 2sc5375.pdf Size:122K _sanyo

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Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=3V, IC=7mA 110 180 DC Current Gain hFE2 VCE=3V, IC=30mA

1.229. 2sa608n_2sc536n.pdf Size:36K _sanyo

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Ordering number : ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit : mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 2 3 1.271.27 1 : Emitter 2 : Collector 3 : Base SANYO : NPA unit : mm 2164 [2SA608N / 2SC536N] 4.5 3.7 3.5 0.45 0.5 1.27 0.45 0.44 1 2 3 2.5 2.5 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest yo

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Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping. [2SC5291] 9.5mm onboard mounting height. 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base Specifications 2.5 2.5 SANYO : FLP Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 180 V Collector-to-Emitter Voltage VCEO 160 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 1.5 A Collector Current (Pulse) ICP 2.5 A Base Current IB 300 mA Collector Dissipation PC 1.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=120V, IE=0 1.0 A Emitter Cutoff Current IE

1.231. 2sc5777.pdf Size:29K _sanyo

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Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5777] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=8

1.232. 2sc5226.pdf Size:112K _sanyo

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Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2059B High cutoff frequency : fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A DC Current Gain hFE VCE=5V, IC=20mA

1.233. 2sc5155.pdf Size:115K _sanyo

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Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications Package Dimensions Various drivers. unit:mm 2045B Features [2SC5155] 6.5 High current capacity. 2.3 5.0 0.5 4 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. 0.85 0.7 1.2 1 : Base 0.6 0.5 2 : Collector 3 : Emitter 1 2 3 4 : Collector 2.3 2.3 SANYO : TP unit:mm 2044B [2SC5155] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 2 : Collector 1.2 0~0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircrafts control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Con

1.234. 2sc5536a.pdf Size:51K _sanyo

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Ordering number : ENA1092 2SC5536A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier, 2SC5536A OSC Applications Features Low-noise : NF=1.8dB typ (f=150MHz). High gain : ?S21e?2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 50 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A hFE1 VCE=2V, IC=3mA 80 200 DC Current Gain hFE2 VCE=2V, IC=50mA 70 Gain-Bandwidth Product fT VCE=2V, IC=3mA 1.0 1

1.235. 2sc5245.pdf Size:155K _sanyo

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Ordering number:EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2059B 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5245] High cutoff frequency : fT=11GHz typ. 0.3 Low-voltage, low-current operation 0.15 3 (VCE=1V, IC=1mA) : fT=7GHz type. 0 to 0.1 2 : ? S21e? =5.5dB typ (f=1.5GHz). 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ

1.236. 2sc5414a.pdf Size:48K _sanyo

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Ordering number : ENA1081 2SC5414A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5414A Amplifier Applications Features High gain : ?S21e?2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 400 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A hFE1 VCE=5V, IC=30mA 90* 270* DC Current Gain hFE2 VCE=5V, IC=70mA 70 Continued on next page. * : The 2SC5414A is classified by 30mA hFE as follows : Rank E F hFE 90 to 180 135 to 270 Any

1.237. 2sc5707.pdf Size:37K _sanyo

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Ordering number : ENN6913 2SA2040/2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2045B [2SA2040 / 2SC5707] Features 6.5 2.3 5.0 0.5 Adoption of FBET, MBIT process. 4 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2044B [2SA2040 / 2SC5707] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircr

1.238. 2sc5999.pdf Size:37K _sanyo

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Ordering number : ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors 2SC5999 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 40 A Base Current IB 2 A 1.65 W Collector Dissipation PC Tc=25C40 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=100V, IE=0 10 A Emitter Cutoff Current IEBO VEB=4V, IC=0

1.239. 2sc5536.pdf Size:35K _sanyo

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Ordering number:ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features Package Dimensions Low noise : NF=1.8dB typ (f=150MHz). unit:mm 2 High gain : ? S21e? =16dB typ (f=150MHz). 2159 Ultrasmall, slim flat-lead package. [2SC5536] (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 50 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=2V, IC=3mA 80 200 DC Current Gain

1.240. 2sc5638.pdf Size:42K _sanyo

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Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5638] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7 0.9 1 2 3 5.45 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3 W Collector Dissipation PC Tc=25?C 95 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES

1.241. 2sc5501a.pdf Size:264K _sanyo

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Ordering number : ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Large allowable collector dissipation : PC=500mW max. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2?0.8mm) 500 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=20mA 90* 270* *

1.242. 2sc5304ls.pdf Size:43K _sanyo

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Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 7 A Collector Current (pulse) ICP 14 A 2 W Collector Dissipation PC 35 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA C

1.243. 2sc5537.pdf Size:32K _sanyo

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Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features Package Dimensions Low voltage, low current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7dB typ (f=1GHz). 2159 : NF=2.6dB typ (f=1GHz). [2SC5537] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 12 V Collector-to-Emitter Voltage VCEO 6 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 15 mA Collector Dissipation PC 80 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=

1.244. 2sc5415.pdf Size:47K _sanyo

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Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =9dB typ (f=1GHz). unit:mm High cutoff frequency : fT=6.7GHz typ. 2038A [2SC5415] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 800 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=5V, IC=30mA 90* 27

1.245. 2sc5696.pdf Size:29K _sanyo

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Ordering number : ENN6663B 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5696] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter 5.45 Specifications SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 12 A Collector Current (Pulse) ICP 36 A 3.0 W Collector Dissipation PC Tc=25C85 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=

1.246. 2sc5567.pdf Size:49K _sanyo

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Ordering number:ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to 3 2 1 be made small and slim. 0.4 0.5 High allowable power dissipation. 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2014 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO ()15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()9 A Collector Current (Pulse) ICP ()12 A Base Current IB ()1.2 A Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W

1.247. 2sc5774.pdf Size:29K _sanyo

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Ordering number : ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SA2062 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)160 V Collector-to-Emitter Voltage VCEO (--)140 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)10 A Collector Current (Pulse) ICP (--)20 A 2.5 W Collector Dissipation PC Tc=25C 110 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Un

1.248. 2sc5569.pdf Size:50K _sanyo

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Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end 3 2 1 products. 0.4 0.5 High allowable power dissipation. 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2016 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (50)80 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()10 A Base Current IB ()1.2 A Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Co

1.249. 2sc5302.pdf Size:89K _sanyo

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Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (pulse) ICP 35 A Collector Dissipation PC 3 W Tc=25?C 75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES

1.250. 2sc5578.pdf Size:40K _sanyo

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Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.5 W Collector Dissipation PC Tc=25?C 140 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1600V, RBE=0 1

1.251. 2sc5764.pdf Size:31K _sanyo

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Ordering number : ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching. [2SC5764] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 700 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V Collector Current IC 7 A Collector Current (Pulse) ICP PW?300s, Duty cycle?10% 14 A 2.0 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=400V, IE=0 10 A Emitter C

1.252. 2sc5388.pdf Size:41K _sanyo

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Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions High speed (Adoption of MBIT process). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5388] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 700 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 5 A Collector Current (Pulse) ICP 10 A Base Current IB 1 A 3.0 W Collector Dissipation PC Tc=25?C 50 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=700V

1.253. 2sc5639.pdf Size:42K _sanyo

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Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5639] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7 0.9 1 2 3 5.45 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A 3 W Collector Dissipation PC Tc=25?C 100 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES

1.254. 2sc5450.pdf Size:40K _sanyo

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Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5450] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=

1.255. 2sc5610.pdf Size:51K _sanyo

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Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector Specifications 3 : Emitter 2.55 2.55 SANYO : TO220ML ( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (50)60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()7 A Collector Current (Pulse) ICP ()10 A Base Current IB ()1.2 A 2 W Collector Dissipation PC Tc=25?C 18 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C

1.256. 2sa2016_2sc5569.pdf Size:57K _sanyo

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Ordering number : ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. High allowable power dissipation. Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)7 A Collector Current (Pulse) ICP (--)10 A Base Current IB (--)1.2 A Mounted on a ceramic board (250mm2 0.8mm) 1.3 W Collector Dissipation PC Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55

1.257. 2sc5414.pdf Size:47K _sanyo

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Ordering number:ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =9.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=6.7GHz typ. 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Base 1 2 3 2 : Emitter 3 : Collector 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 400 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=5V, IC=30mA 90* 270* DC Current Gain hFE2 VCE=5V, IC=70mA 70 Gain-Bandw

1.258. 2sc5565.pdf Size:49K _sanyo

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Ordering number:ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2012/2SC5565] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized package permitting applied sets to be made small and slim. High allowable power dissipation. 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2012 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (30)40 V Collector-to-Emitter Voltage VCEO ()30 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()5 A Collector Current (Pulse) ICP ()8 A Base Current IB ()600 mA Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Collector Dissipation P

1.259. 2sc5541.pdf Size:44K _sanyo

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Ordering number:ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=2GHz). unit:mm 2 High gain : ? S21e? =10dB typ (f=2GHz). 2159 High cutoff frequency : fT=13GHz typ. [2SC5541] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 6 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hF

1.260. 2sc5275.pdf Size:136K _sanyo

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Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2018B 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5275] High cutoff frequency : fT=11GHz typ. 0.4 Low-voltage, low-current operation 0.16 3 (VCE=1V, IC=1mA) : fT=7GHz type. 0 to 0.1 2 : ? S21e? =5.5dB typ (f=1.5GHz). 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Colle

1.261. 2sc5710.pdf Size:37K _sanyo

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Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.2 0.6 0.5 1 : Base 2 : Collector 1 2 3 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 unit : mm 2044B [2SA2044 / 2SC5710] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Base 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other

1.262. 2sc5689.pdf Size:29K _sanyo

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Ordering number : ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5689] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector C

1.263. 2sc5566.pdf Size:50K _sanyo

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Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products. 0.4 0.5 High allowable power dissipation. 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (50)80 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()4 A Collector Current (Pulse) ICP ()7 A Base Current IB ()600 mA Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W

1.264. 2sc5763.pdf Size:30K _sanyo

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Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching. [2SC5763] Wide ASO. 10.2 4.5 Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter SANYO : TO-220 Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 700 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V Collector Current IC 7 A Collector Current (Pulse) ICP PW?300s, Duty cycle?10% 14 A 1.75 W Collector Dissipation PC Tc=25C55 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=400V, IE=0 10 A Emitter Cutoff Current IEBO

1.265. 2sc5994.pdf Size:254K _sanyo

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Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor 2SC5994 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 400 mA Mounted on a ceramic board (450mm2 0.8m) 1.3 W Collector Dissipation PC Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=50V, IE=0 1 A Emitter

1.266. 2sc5698.pdf Size:29K _sanyo

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Ordering number : ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5698] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A 3.0 W Collector Dissipation PC Tc=25C65 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=80

1.267. 2sc5504.pdf Size:48K _sanyo

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Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2161 2 High gain : ? S21e? =11dB typ (f=1GHz). [2SC5504] High cutoff frequency : fT=11GHz typ. Low voltage, low current operation. 0.65 0.65 (VCE=1V, IC=1mA) 0.15 0.3 : fT=7GHz typ. 4 3 2 0 to 0.1 : ? S21e? =6dB typ (f=1.5GHz). 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 300 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ra

1.268. 2sc5706.pdf Size:40K _sanyo

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Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4 Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2044B [2SA2039 / 2SC5706] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraf

1.269. 2sc5229.pdf Size:134K _sanyo

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Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =10.5dB typ (f=1GHz). 2038A High cutoff frequency : fT=6.5GHz typ. [2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V, IC=40mA) : ? S21e? =11dB typ 1.6 (f=1GHz). 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC Mounted on ceramic board (250mm2? 0.8mm) 700 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Condition

1.270. 2sc5265ls.pdf Size:31K _sanyo

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Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit : mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Base 2 : Collector 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220FI(LS) Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (Pulse) ICP 8 A 2 W Collector Dissipation PC Tc=25C30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=600V, IE=0 10 A Collector Cutoff Current ICES VCE=1200V, RBE=0 1.0 m

1.271. 2sc5680.pdf Size:28K _sanyo

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Ordering number : ENN6652A 2SC5680 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5680] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=8

1.272. 2sc5682.pdf Size:28K _sanyo

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Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5682] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A 3.0 W Collector Dissipation PC Tc=25C95 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V,

1.273. 2sc5226a.pdf Size:75K _sanyo

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Ordering number : ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=20mA 60* 270* Continued on next page. * : The 2SC5226A is classified by 20mA hFE as follows : Marking LN3 LN4 LN5 Rank

1.274. 2sc5501.pdf Size:46K _sanyo

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Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2161 High cutoff frequency : fT=7GHz typ. [2SC5501] Large allowable collector dissipation : PC=500mW max. 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 500 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff C

1.275. 2sc5231.pdf Size:132K _sanyo

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Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2106A High cutoff frequency : fT=7GHz typ. [2SC5231] Very small-sized package permiting 2SC5231- 0.75 0.3 0.6 applied sets to be made small and slim. 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emi

1.276. 2sc5230.pdf Size:128K _sanyo

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Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =10.5dB typ (f=1GHz). 2004B High cutoff frequency : fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Base 2 : Emitter 3 : Collector 1 2 3 SANYO : NP JEDEC : TO-92 EIAJ : SC-43 1.3 1.3 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 400 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A DC Current

1.277. 2sc5444.pdf Size:42K _sanyo

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Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5444] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 3.5 W Tc=25?C 210 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=150

1.278. 2sc5043.pdf Size:106K _sanyo

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Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5043] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC 3.0 W Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff

1.279. 2sc5420.pdf Size:69K _sanyo

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Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2069B Adoption of MBIT process. [2SC5420] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 5 A Collector Current (Pulse) ICP 10 A 1.75 W Collector Dissipation PC Tc=25?C 50 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Collector-to-Em

1.280. 2sc5416ls.pdf Size:43K _sanyo

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Ordering number:ENN5696A NPN Triple Diffused Planar Silicon Transistor 2SC5416LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5416] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (pulse) ICP 8 A 2 W Collector Dissipation PC Tc=25?C 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Collector Satura

1.281. 2sc5069.pdf Size:106K _sanyo

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Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit:mm Adoption of MBIT process. 2038A High DC current gain. [2SC5069] Low collector-to-emitter saturation voltage. 4.5 High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 0.4 A Collector Dissipation PC Mounted on ceramic board (250mm2? 0.8mm) 1.5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Coll

1.282. 2sa2013_2sc5566.pdf Size:57K _sanyo

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Ordering number : ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales miniaturization in end products. High allowable power dissipation. Specifications ( ) : 2SA2013 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)4 A Collector Current (Pulse) ICP (--)7 A Base Current IB (--)600 mA Mounted on a ceramic board (250mm2 0.8mm) 1.3 W Collector Dissipation PC Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55

1.283. 2sc5776.pdf Size:29K _sanyo

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Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5776] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A 3.0 W Collector Dissipation PC Tc=25C65 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=8

1.284. 2sc5296.pdf Size:99K _sanyo

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Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5296] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC 3.0 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Col

1.285. 2sc5374.pdf Size:122K _sanyo

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Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=3V, IC=7mA 110 180 DC Current Gain hFE2 VCE=3V, IC=30mA 100

1.286. 2sc5227a.pdf Size:75K _sanyo

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Ordering number : ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=20mA 60* 270* Continued on next page. * : The 2SC5227A is classified by 20mA hFE as follows : Marking LN3 LN4 LN5 Rank

1.287. 2sa2039_2sc5706.pdf Size:61K _sanyo

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Ordering number : ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2039 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)5 A Collector Current (Pulse) ICP (--)7.5 A Base Current IB (--)1.2 A 0.8 W Collector Dissipation PC Tc=25C15 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditi

1.288. 2sc5637.pdf Size:42K _sanyo

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Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5637] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7 0.9 1 2 3 5.45 1 : Base 2 : Collector 3 : Emitter 5.45 SANYO : TO-3PMLH Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25?C 85 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICB

1.289. 2sc5808.pdf Size:30K _sanyo

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Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit : mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Base 2 : Collector 1 2 3 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 Package Dimensions unit : mm 2044B [2SC5808] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 1 : Base 0.6 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before usi

1.290. 2sc5231a.pdf Size:279K _sanyo

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Ordering number : ENA1077 2SC5231A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5231A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=20mA 60* 270* Continued on next page. * :

1.291. 2sc5669.pdf Size:33K _sanyo

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Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB Note*( ) : 2SA2031 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-)250 V Collector-to-Emitter Voltage VCEO (-)230 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)15 A Collector Current (Pulse) ICP (-)30 A 2.5 W Collector Dissipation PC Tc=25C 140 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit

1.292. 2sc5297.pdf Size:100K _sanyo

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Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5297] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC 3.0 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICB

1.293. 2sc5793.pdf Size:51K _sanyo

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注文コード No. N7451 2SC5793 N7451 No. 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 超高精細度 CRT ディスプレイ 2SC5793 水平偏向出力用 特長 ・高速度である。 ・高耐圧である 。 (VCBO=1600V) ・高信頼性である プロセス採用) (HVP 。 ・MBIT プロセス採用。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃ unit コレクタ・ベース電圧 VCBO 1600 V コレクタ・エミッタ電圧 VCEO 800 V エミッタ・ベース電圧 VEBO 5 V コレクタ電流 IC 20 A コレクタ電流(パルス) ICP 40 A コレクタ損失 PC 3.0 W Tc=25℃ 95 W 接合部温度 Tj 150 ℃ 保存周囲温度 Tstg - 55 ~+ 150 ℃ 電気的特性 Electrical Characteristics / Ta=25℃ min typ max unit コレクタしゃ断電流 ICBO VCB=800V, IE=0 10 µA コレクタしゃ断電流 ICES VCE=1600V, RBE=0 1.0 mA コレクタ・エミッタ降伏電圧 V(BR)CEO IC=10mA, RBE=∞

1.294. 2sc5310.pdf Size:44K _sanyo

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Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16 3 products. 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()30 V Collector-to-Emitter Voltage VCEO ()25 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()1 A Collector Current (Pulse) ICP ()3 A Base Current IB ()200 mA Collector Dissipation PC Mounted on a glass-epoxy board (20? 30? 1.6mm) 250 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics

1.295. 2sc5792.pdf Size:29K _sanyo

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Ordering number : ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5792] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.0 W Collector Dissipation PC Tc=25C85 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=800V, IE=0 10 A Collector

1.296. 2sc5045.pdf Size:108K _sanyo

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Ordering number:EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5045] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A Collector Dissipation PC 3.0 W Tc=25?C 75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO

1.297. 2sc5452.pdf Size:42K _sanyo

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Ordering number:EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5452] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A Collector Dissipation PC 3 W Tc=25?C 75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1600V, RBE=0

1.298. 2sc5489.pdf Size:31K _sanyo

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Ordering number:ENN6339 NPN Epitaxial Planar Silicon Transistor 2SC5489 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2159 High cutoff frequency : fT=9.0GHz typ. [2SC5489] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0

1.299. 2sc5551a.pdf Size:287K _sanyo

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Ordering number : ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCEO 30 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 300 mA Collector Current (Pulse) ICP 600 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2?0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=20V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 5.0 ?A Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products

1.300. 2sc5301.pdf Size:96K _sanyo

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Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6 1 2 3 1 : Base 3.1 5.45 5.45 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3JML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A 4.6 W Collector Dissipation PC Tc=25?C 120 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff

1.301. 2sc5265.pdf Size:112K _sanyo

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Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (Pulse) ICP 8 A Collector Dissipation PC 2 W Tc=25?C 30 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=600V, IE=0 10 A ICES VCE=1200V, RBE=0 1.0 mA Collector-to-

1.302. 2sc5347a.pdf Size:67K _sanyo

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Ordering number : ENA1087 2SC5347A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, 2SC5347A Low-Noise Medium Output Amplifier Applications Features High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :?S21e?2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 150 mA Collector Dissipation PC When mounted on ceramic substrate (900mm2?0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office e

1.303. 2sc5690.pdf Size:28K _sanyo

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Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5690] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.0 W Collector Dissipation PC Tc=25C85 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=8

1.304. 2sc5490a.pdf Size:47K _sanyo

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Ordering number : ENA1091 2SC5490A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5490A Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : ?S21e?2=5.5dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Marking : MN Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard applic

1.305. 2sc5416.pdf Size:45K _sanyo

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Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit: mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5416] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter SANYO : TO220FI (LS) 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 4 A Collector Current (Pulse) ICP 8 A Collector Dissipation PC 2 W Tc=25C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Col

1.306. 2sc5070.pdf Size:106K _sanyo

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Ordering number:EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit:mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.5 2.5 SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A Base Current IB 0.4 A Collector Dissipation PC 1.5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=20V, IE=0 100

1.307. 2sc5276.pdf Size:136K _sanyo

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Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2110A 2 High gain : ? S21e? =11dB typ (f=1.5GHz). [2SC5276] 1.9 High cutoff frequency : fT=11GHz typ. 0.95 0.95 Low-voltage, low-current operation 0.4 0.16 (VCE=1V, IC=1mA) 4 3 : fT=7GHz type. 0 to 0.1 2 : ? S21e? =6dB typ (f=1.5GHz). 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2 : Collector 3 : Emitter 4 : Base SANYO : CP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Cond

1.308. 2sc5305ls.pdf Size:42K _sanyo

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Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 6 A Collector Current (pulse) ICP 12 A 2 W Collector Dissipation PC 35 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=600V, IE=0 10 A Collector Cutoff Current ICES VCE=1200V, RBE=0 1.0 mA

1.309. 2sc5047.pdf Size:108K _sanyo

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Ordering number:EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5047] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 3.5 W Tc=25?C 250 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=80

1.310. 2sc5245a.pdf Size:270K _sanyo

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Ordering number : ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5245A OSC Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : ?S21e?2=5.5dB typ (f=1.5GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, c

1.311. 2sc5538.pdf Size:36K _sanyo

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Ordering number:ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =10.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2159 Ultrasmall, slim flat-lead package. [2SC5538] (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE1 VCE=3V, IC=7mA 110 200 D

1.312. 2sc5299.pdf Size:94K _sanyo

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Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5299] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=800V, IE=0 10 A C

1.313. 2sc5791.pdf Size:31K _sanyo

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Ordering number : ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5791] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25C80 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=800V, IE=0 10 A Collector

1.314. 2sc5577.pdf Size:40K _sanyo

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Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.5 W Collector Dissipation PC Tc=25?C 140 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES V

1.315. 2sc5775.pdf Size:29K _sanyo

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Ordering number : ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter Specifications 5.45 5.45 SANYO : TO-3PB ( ) : 2SA2063 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V Collector-to-Emitter Voltage VCEO (--)160 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)12 A Collector Current (Pulse) ICP (--)24 A 2.5 W Collector Dissipation PC Tc=25C 130 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit

1.316. 2sc5568.pdf Size:49K _sanyo

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Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to 3 2 1 be made small and slim. 0.4 0.5 High allowable power dissipation. 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2015 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (30)40 V Collector-to-Emitter Voltage VCEO ()30 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()8 A Collector Current (Pulse) ICP ()12 A Base Current IB ()1.2 A Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W

1.317. 2sc5539.pdf Size:44K _sanyo

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Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2159 High cutoff frequency : fT=7.5GHz typ. [2SC5539] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0

1.318. 2sc5506.pdf Size:41K _sanyo

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Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5506] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A Collector Dissipation PC 3.5 W Tc=25?C 180 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1600V, RBE=0 1.0 m

1.319. 2sc5980.pdf Size:38K _sanyo

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Ordering number : ENN8091 2SC5980 NPN Epitaxial Planar Silicon Transistor 2SC5980 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 8 A Collector Current (Pulse) ICP 11 A Base Current IB 2 A 1.0 W Collector Dissipation PC Tc=25C15 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=40V, I

1.320. 2sc5683.pdf Size:28K _sanyo

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Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5683] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A 3.0 W Collector Dissipation PC Tc=25C 100 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB

1.321. 2sc5305.pdf Size:34K _sanyo

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Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1:Base 1 2 3 2:Collector 3:Emitter 2.55 2.55 SANYO:TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 6 A Collector Current (pulse) ICP 12 A Collector Dissipation PC 2 W 35 W Tc=25?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=600V, IE=0 10 A Collector Cutoff Current ICES VCE=1200V, RBE=0 1.0 mA Collec

1.322. 2sa2099_2sc5888.pdf Size:76K _sanyo

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Ordering number : EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)10 A Collector Current (Pulse) ICP (--)13 A Base Current IB (--)2 A 2 W Collector Dissipation PC Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electron

1.323. 2sc5646.pdf Size:31K _sanyo

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Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159 : fT=12.5GHz typ (VCE=3V). [2SC5646] Low operating voltage. High gain :?S21e?2=9.5dB typ (f=2GHz). 1.4 Ultraminiature and thin flat leadless package 0.1 0.25 (1.4mm 0.8mm 0.6mm). 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : SSFP Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Curre

1.324. 2sc5041.pdf Size:101K _sanyo

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Ordering number:EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5041] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 7 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC 3.0 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff

1.325. 2sc5611.pdf Size:41K _sanyo

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Ordering number:ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit:mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo, motor 3.3 1.0 1.0 control). High-speed switching (switching regulater, driver 3.0 circuit). 1.6 0.8 Features Low collector-to-emitter saturation voltage. 0.8 0.75 0.7 Excellent dependence of hFE on current. 1 : Base High-speed switching. 1 2 3 2 : Collector Micaless package facilitating mounting. 3 : Emitter 2.4 4.8 SANYO : TO126ML Specifications Note : The emitter and base are reversely assigned to those Note * ( ) : 2SA2023 of our standard products encapsulated in the TO- Absolute Maximum Ratings at Ta = 25?C 126ML package. Parameter Symbol Conditions Ra

1.326. 2sc5476.pdf Size:40K _sanyo

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Ordering number:EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener diode of 95 10V between collector and base. 2.4 1.6 Uniformity in collector-to-base voltage due to 1.2 adoption of accurate impurity diffusion process. 0.7 0.75 High inductive load handling capability. 1 2 3 2.55 2.55 1 : Base 2.55 2.55 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 85* V Collector-to-Emitter Voltage VCEO 85* V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 0.5 A Collector D

1.327. 2sc5453.pdf Size:41K _sanyo

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Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5453] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A 3.5 W Collector Dissipation PC Tc=25?C 210 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1600V, RBE=0 1.0 m

1.328. 2sc5534.pdf Size:44K _sanyo

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Ordering number:ENN6258 NPN Epitaxial Planar Silicon Transistor 2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=2GHz). unit:mm 2 High gain : ? S21e? =10dB typ (f=2GHz). 2161 High cutoff frequency : fT=13GHz typ. [2SC5534] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 6 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A hFE VCE=5V, IC=10mA D

1.329. 2sc5899.pdf Size:29K _sanyo

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Ordering number : ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1700V). 2174A High reliability(Adoption of HVP process). [2SC5899] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1700 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.0 W Collector Dissipation PC Tc=25C95 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=800V, IE=0 10 A Collector

1.330. 2sc5300.pdf Size:98K _sanyo

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Ordering number:EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A 3 W Collector Dissipation PC Tc=25?C 75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current IC

1.331. 2sc536n.pdf Size:40K _sanyo

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Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit:mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 : Emitter 2.5 2.5 2 : Collector ( ) : 2SA608N 3 : Base SANYO : NPA-WA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (50)60 V Collector-to-Emitter Voltage VCEO ()50 V Emitter-to-Base Voltage VEBO ()6 V Collector Current IC ()150 mA Collector Current (Pulse) ICP ()400 mA Collector Dissipation PC 500 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=()40V, IE=

1.332. 2sc5046.pdf Size:112K _sanyo

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Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5046] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A Collector Dissipation PC 3.5 W Tc=25?C 180 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800

1.333. 2sc5699.pdf Size:28K _sanyo

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Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5699] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A 3.0 W Collector Dissipation PC Tc=25C65 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE=0 10 A Collecto

1.334. 2sc5298.pdf Size:95K _sanyo

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Ordering number:EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5298] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A 3.0 W Collector Dissipation PC Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max ICB

1.335. 2sc5304.pdf Size:36K _sanyo

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Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1:Base 1 2 3 2:Collector 3:Emitter 2.55 2.55 SANYO:TO-220FI (LS) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 7 A Collector Current (pulse) ICP 14 A Collector Dissipation PC 2 W Tc=25?C 35 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Collector

1.336. 2sc5607.pdf Size:30K _sanyo

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Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features [2SC5607] Adoption of MBIT processes. 2.2 4.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 0.4 High allowable power dissipation. 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector 3 : Base 3.0 3.8nom SANYO : SPA Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 15 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 5 A Collector Current (Pulse) ICP 9 A Base Current IB 1 A Collector Dissipation PC 0.55 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO products described or contained herein do not have specificat

1.337. 2sc5831.pdf Size:32K _sanyo

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Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor 2SC5831 Driver Applications Preliminary Applications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B [2SC5831] 8.0 4.0 Features 3.3 1.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 6510V between collector and 3.0 base. Uniformity in collector-to-base voltage. 1.6 Large inductive load handling capability. 0.8 0.8 0.75 0.7 1 : Emitter 1 2 3 2 : Collector 3 : Base 2.4 Specifications 4.8 SANYO : TO-126ML Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO *55 V Collector-to-Emitter Voltage VCEO *55 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 2 A Collector Current (Pulse) ICP 4 A 1.5 W Collector Dissipation PC Tc=25C10 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150

1.338. 2sc5227.pdf Size:127K _sanyo

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Ordering number:EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2018B High cutoff frequency : fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A DC Current Gain hFE VCE=5V, IC=20mA 60* 270* G

1.339. 2sa2040_2sc5707.pdf Size:58K _sanyo

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Ordering number : ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications ( ) : 2SA2040 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)8 A Collector Current (Pulse) ICP (--)11 A Base Current IB (--)2 A 1.0 W Collector Dissipation PC Tc=25C15 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions

1.340. 2sc5551.pdf Size:43K _sanyo

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Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT : (fT=3.5GHz typ). unit:mm Large current : (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 40 V Collector-to-Emitter Voltage VCEO 30 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 300 mA Collector Current (pulse) ICP 600 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=20V, IE=0 1.0 A Emitte

1.341. 2sc5264.pdf Size:463K _sanyo

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Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 5 A Collector Current (Pulse) ICP 10 A 2 W Collector Dissipation PC Tc=25?C 30 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Collector-to-Emitter

1.342. 2sc5503.pdf Size:45K _sanyo

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Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =15dB typ (f=1GHz). 2161 High cutoff frequency : fT=9.0GHz typ. [2SC5503] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 400 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current

1.343. 2sc5238.pdf Size:104K _sanyo

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Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5238] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6 1 2 3 1 : Base 3.1 5.45 5.45 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3JML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 50 A Collector Current (Pulse) ICP 100 A Collector Dissipation PC 5.3 W Tc=25?C 160 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff C

1.344. 2sc5488.pdf Size:34K _sanyo

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Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2159 High cutoff frequency : fT=7GHz typ. [2SC5488] Ultrasmall, slim flat-lead package. (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10

1.345. 2sc5694.pdf Size:37K _sanyo

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Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit : mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low collector-to-emitter saturation voltage. High-speed switching. 1.6 High allowable power dissipation. 0.8 0.8 0.75 0.7 1 2 3 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 SANYO : TO-126ML Specifications ( ):2SA2037 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (-50)60 V Collector-to-Emitter Voltage VCEO (-)50 V Emitter-to-Base Voltage VEBO (-)6 V Collector Current IC (-)7 A Collector Current (Pulse) ICP (-)10 A Base Current IB (-)1.2 A 1.2 W Collector Dissipation PC Tc=25C10 W Junction Temperature Tj 150 C Storage Te

1.346. 2sc5681.pdf Size:28K _sanyo

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Ordering number : ENN6607A 2SC5681 NPN Triple Diffused Planar Silicon Transistor 2SC5681 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5681] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 5.45 2 : Collector 3 : Emitter Specifications 5.45 SANYO : TO-3PMLH Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.0 W Collector Dissipation PC Tc=25C85 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V

1.347. 2sc5488a.pdf Size:57K _sanyo

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Ordering number : ENA1089 2SC5488A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5488A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=20mA 90 200 Gain-Bandwidth Product

1.348. 2sc5665.pdf Size:36K _sanyo

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Ordering number : ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A : fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0~0.1 1 2 0.1 0.2 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Marking : NK This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity. Any and all SANYO products described or contained herein

1.349. 2sc5044.pdf Size:105K _sanyo

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Ordering number:EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5044] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 10 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC 3.0 W Tc=25?C 70 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V,

1.350. 2sc5347.pdf Size:114K _sanyo

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Ordering number:EN5512A NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features Package Dimensions High frequency medium output amplification unit:mm (VCE=5V, IC=50mA) 2038A : fT=4.7GHz typ (f=1GHz). [2SC5347] 2 : ? S21e? =8dB typ (f=1GHz). 4.5 : NF=1.8dB typ (f=1GHz). 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 150 mA Collector Dissipation PC Mounted on ceramic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO

1.351. 2sc5709.pdf Size:37K _sanyo

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Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.2 0.6 0.5 1 : Base 1 2 3 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP unit : mm 2044B [2SA2043 / 2SC5709] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1 : Base 1.2 2 : Collector 0 to 0.2 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap

1.352. 2sc5277a.pdf Size:58K _sanyo

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Ordering number : ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : ?S21e?2=5.5dB typ (f=1.5GHz). Ultrasmall-sized package permitting applied sets to be made small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended f

1.353. 2sc5374a.pdf Size:56K _sanyo

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Ordering number : ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain : ?S21e?2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A hFE1 VCE=3V, IC=7mA 110 180 DC Current Gain hFE2 VCE=3V, IC=30mA 100 Gain-Bandwidth Product fT VCE=3V, IC=7mA 3 5.2 GHz Output Capacitance Cob VCB=3V, f=1MHz 1.0 1.5 pF Reverse

1.354. 2sc5645.pdf Size:32K _sanyo

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Ordering number : ENN6588 2SC5645 NPN Epitaxial Planar Silicon Transistor 2SC5645 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). [2SC5645] Low-voltage operating . High gain :?S21e?2=9.5dB typ (f=2GHz). 0.75 0.3 0.6 3 0 to 0.1 1 2 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : SMCP Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current

1.355. 2sc5417.pdf Size:45K _sanyo

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Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit: mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5417] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter SANYO : TO220FI (LS) 2.55 2.55 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 3 A Collector Current (Pulse) ICP 6 A Collector Dissipation PC 2 W Tc=25C 25 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=600V, IE=0 10 A Collector Cutoff Current ICES VCE=1200V, RBE=0 1.0 mA Col

1.356. 2sc5417ls.pdf Size:43K _sanyo

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Ordering number:ENN5817A NPN Triple Diffused Planar Silicon Transistor 2SC5417LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5417] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1:Base 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 600 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 3 A Collector Current (pulse) ICP 6 A 2 W Collector Dissipation PC Tc=25?C 25 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta=25?C Ratings Parameter Symbol Conditons Unit min typ max Collector Cutoff Current ICBO VCB=600V, IE=0 10 A Collector Cutoff Current ICES VCE=1200V, RBE=0 1.0 mA Collector Sustain

1.357. 2sc5564.pdf Size:50K _sanyo

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Ordering number:ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim. 0.4 0.5 High allowable power dissipation. 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter Specifications SANYO : PCP (Bottom view) ( ) : 2SA2011 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ()15 V Collector-to-Emitter Voltage VCEO (12)15 V Emitter-to-Base Voltage VEBO ()5 V Collector Current IC ()6 A Collector Current (Pulse) ICP ()9 A Base Current IB ()600 mA Mounted on a ceramic board (250mm2? 0.8mm) 1.3

1.358. 2sc5646a.pdf Size:55K _sanyo

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Ordering number : ENA1120 2SC5646A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, 2SC5646A OSC Applications Features Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : ?S21e?2=9.5dB typ (f=2GHz). Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Curr

1.359. 2sc5303.pdf Size:40K _sanyo

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Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6 1 2 3 1 : Base 3.1 5.45 5.45 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3JML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 25 A Collector Current (Pulse) ICP 50 A Collector Dissipation PC 4.6 W Tc=25?C 140 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff

1.360. 2sc5264ls.pdf Size:42K _sanyo

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Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 Specifications SANYO : TO-220FI (LS) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1000 V Collector-to-Emitter Voltage VCEO 450 V Emitter-to-Base Voltage VEBO 9 V Collector Current IC 5 A Collector Current (Pulse) ICP 10 A 2 W Collector Dissipation PC Tc=25?C 30 W ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=450V, IE=0 10 A Collector Cutoff Current ICES VCE=1000V, RBE=0 1.0 mA Collector-to-E

1.361. 2sc5042.pdf Size:101K _sanyo

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Ordering number:EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5042] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 7 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC 3.0 W Tc=25?C 60 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=800V, IE

1.362. 2sc5778.pdf Size:30K _sanyo

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Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). Adoption of MBIT process. [2SC5778] On-chip damper diode. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 : Collector 5.45 3 : Emitter Specifications SANYO : TO-3PMLH 5.45 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3.0 W Collector Dissipation PC Tc=25C85 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max ICBO VCB=80

1.363. 2sc5451.pdf Size:40K _sanyo

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Ordering number:EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5451] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1600 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 15 A Collector Current (Pulse) ICP 35 A 3 W Collector Dissipation PC Tc=25?C 75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=1600V, RBE=

1.364. 2sa2125_2sc5964.pdf Size:59K _sanyo

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Ordering number : ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2125 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)3 A Collector Current (Pulse) ICP (--)6 A Base Current IB (--)600 mA Mounted on a ceramic board (250mm2 0.8m) 1.3 W Collector Dissipation PC Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min

1.365. 2sc5647.pdf Size:36K _sanyo

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Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). [2SC5647] Low operating voltage. 0.75 High gain : ?S21e?2=10.5dB typ (f=2GHz). 0.3 0.6 3 0 to 0.1 1 2 0.1 0.2 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 9 V Collector-to-Emitter Voltage VCEO 4 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 20 mA Collector Dissipation PC 80 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Marking : NH Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Any and all SANY

1.366. 2sc5888.pdf Size:42K _sanyo

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Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-speed switching. 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter Specifications 2.55 2.55 SANYO : TO-220ML ( ) : 2SA2099 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)10 A Collector Current (Pulse) ICP (--)13 A Base Current IB (--)2 A 2 W Collector Dissipation PC Tc=25C25 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electr

1.367. 2sc5443.pdf Size:42K _sanyo

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Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3 2 : Collector 3 : Emitter 5.45 5.45 SANYO : TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 6 V Collector Current IC 20 A Collector Current (Pulse) ICP 40 A Collector Dissipation PC 3.5 W Tc=25?C 180 W Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICES VCE=150

1.368. 2sc5490.pdf Size:39K _sanyo

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Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2159 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5490] High cutoff frequency : fT=11GHz typ. Ultrasmall, slim flat-lead package. 1.4 (1.4mm? 0.8mm? 0.6mm) 0.1 0.25 Low voltage, low current operation. 3 (VCE=1V, IC=1mA) : fT=7GHz typ. 2 : ? S21e? =5.5dB typ (f=1.5GHz) 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter

1.369. 2sc5415a.pdf Size:92K _sanyo

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Ordering number : ENA1080 2SC5415A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5415A Amplifier Applications Features High gain : ?S21e?2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC When mounted on ceramic substrate (250mm2?0.8mm) 800 mW Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A hFE1 VCE=5V, IC=30mA 90* 270* DC Current Gain hFE2 VCE=5V, IC=70mA 70 Continued on next page. * : The 2SC5415A is classified by 30mA hFE as fol

1.370. 2sc5502.pdf Size:48K _sanyo

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Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2161 High cutoff frequency : fT=8GHz typ. [2SC5502] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 100 mA Collector Dissipation PC Mounted on a ceramic board (250mm2? 0.8mm) 500 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=5V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB

1.371. 2sc5540.pdf Size:30K _sanyo

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Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions High cutoff frequency : fT=10GHz typ. unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2159 Low noise : NF=1.3dB typ (f=1GHz). [2SC5540] Small Cob : Cob=0.4pF typ. Ultrasmall, slim flat-lead package. 1.4 (1.4mm ? 0.8mm ? 0.6mm) 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 16 V Collector-to-Emitter Voltage VCEO 8 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 20 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter C

1.372. 2sc5277.pdf Size:134K _sanyo

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Ordering number:EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency : fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. 0 to 0.1 2 : ? S21e? =5.5dB typ (f=1.5GHz). Ultrasmall-sized package permitting 2SC5277- applied sets to be made small and slim. 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 1.5 V Collector Current IC 30 mA Collector Dissipation PC 100 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical

1.373. 2sc5228.pdf Size:128K _sanyo

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Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13.5dB typ (f=1GHz). 2110A High cutoff frequency : fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2 : Collector 3 : Emitter 4 : Base SANYO : CP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 10 V Emitter-to-Base Voltage VEBO 2 V Collector Current IC 70 mA Collector Dissipation PC 200 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg 55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0 1.0 A Emitter Cutoff Current IEBO VEB=1V, IC=0 10 A DC Current G

1.374. 2sc5593.pdf Size:63K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.375. 2sc5894.pdf Size:129K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.376. 2sc5623.pdf Size:63K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.377. 2sc5828.pdf Size:116K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.378. 2sc5945.pdf Size:276K _renesas

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2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm). Outline RENESAS Package code: PWSN0006JA-A (Package name: HWSON-6 ) 1. Collector 7 4 4 5 5 2. Collector 7 6 6 3. Collector 4. Emitter 5. Base 3 3 2 2 1 1 6. Emitter 7. Emitter Note: Marking is 5945. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 13 V Collector to emitter voltage VCEO 5 V Emitter to base voltage VEBO 1.5 V Collector current IC 500 mA Collector power dissipation Pc 1Note W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: Value on PCB (40 x 40 x 1.0 mm)

1.379. 2sc5820.pdf Size:140K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.380. 2sc5890.pdf Size:169K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.381. 2sc5624.pdf Size:105K _renesas

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2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z (Previous ADE-208-978(Z)) Rev.2.00 Oct.21.2003 Features High gain bandwidth product fT = 28 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is VH-. Rev.2.00, Oct.21.2003, page 1 of 7 2SC5624 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 3.5 V Emitter to base voltage VEBO 0.8 V Collector current IC 35 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown V(BR)CBO 10 V IC = 10 A , IE = 0 voltage Collector cutoff current ICBO 1 A VCB = 8 V , IE = 0 Collector cutoff current

1.382. 2sc5758.pdf Size:123K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.383. rej03g1921_rjk03c5dpads.pdf Size:80K _renesas

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Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 6 7 8 5 4 1, 2, 3 Source G 4 Gate 1 4 3 2 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 50 A Drain peak current ID(pulse)Note1 200 A Body-drain diode reverse drain current IDR 50 A Avalanche current IAP Note 2 20 A Avalanche energy EAR Note 2 40 mJ Channel dissipation Pch Note3 50 W Channel to case thermal impedance ?ch-c Note3 2.5 ?C/W Channel temperature Tch 150 ?C Storage temperature

1.384. 2sc5998.pdf Size:104K _renesas

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2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features High Transition Frequency fT = 11 GHz typ. High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Voltage VCEO = 5 V Ideal for up to 2GHz applications. e.g FRS(Family Radio Service) Power Amplifier , GMRS (General Mobile Radio Service) Driver Amplifier Outline MPAK 3 1 1. Collector 2 2. Base 3. Emitter Note: Marking is YC-. Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 13 V Collector to emitter voltage VCEO 5V Emitter to base voltage VEBO 1.5 V Collector current IC 500 mA Collector power dissipation Pc 700note mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm

1.385. 2sc5022.pdf Size:41K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.386. 2sc5850.pdf Size:85K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept

1.387. ksc5502.pdf Size:226K _fairchild_semi

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April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 1200 V BVCEO Collector-Emitter Voltage 600 V BVEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP Collector Current (Pulse)** 4 A IB Base Current (DC) 1 A IBP Collector Current (Pulse)** 2 A PC Collector Dissipation(TC=25C) 50 W TJ Junction Temperature 150 C TSTG Storage Junction Temperature Range - 65 ~ 150 C EAS Avalanche Energy(Tj=25C) 2.5 mJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle ? 10% Thermal Characteristics Ta=25C unless otherwise note

1.388. ksc5039f.pdf Size:58K _fairchild_semi

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KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current 3 A PC Collector Dissipation (TC=25C) 30 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IC = 1mA, IC = 0 7 ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 A IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 A hFE *DC Current Gain VCE = 5V, IC = 0.3A 10 VCE(

1.389. ksc5603d.pdf Size:109K _fairchild_semi

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February 2010 KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode B Suitable for Electronic Ballast Application TO-220 1 Small Variance in Storage Time 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1600 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 6 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25C) 100 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 to +150 C * Pulse Test: Pulse Width=5ms, Duty Cycle<10% Thermal Characteristics TA = 25C unless otherwise noted Symbol Parameter Rating Units R?JC Thermal Resistance Junction to Case 1.25 C/W R?JA Junction to Ambient 80 C/W

1.390. bc517.pdf Size:27K _fairchild_semi

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January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25C unless otherwise noted Symbol Parameter Conditions Min. Max Units Off Characteristics V(BR)CEO Collecto

1.391. ksc5019.pdf Size:38K _fairchild_semi

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KSC5019 Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP * Collector Current (Pulse) 5 A IB Base Current 2 A PC Collector Power Dissipation 750 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C * PW?10ms, Duty Cycle?30% Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=6V, IC=0 100 nA BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 10 V BVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 6 V hFE1 DC Current Gain VCE=1V, IC=0.5A 140 600 hFE2 VCE=1V, IC=2A 70 200 VC

1.392. ksc5027.pdf Size:53K _fairchild_semi

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KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 10 A IB Base Current 1.5 A PC Collector Dissipation ( TC=25C) 50 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 800 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 1.5A, IB1 = -IB2 = 0.3A 800 V L = 2mH, Clamped ICBO Collector Cut-off Current VCB = 800V,

1.393. fdc5661n_f085.pdf Size:419K _fairchild_semi

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October 2008 FDC5661N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 4A, 60m? Applications Features RDS(on) = 47m? at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60m? at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDC5661N_F085 Rev. A FDC5661N_F085 N-Channel Logic Level PowerTrench MOSFET MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage 20 V Drain Current Continuous (VGS = 10V) 4.3 ID A Pulsed 20 PD Power Dissipation 1.6 W o TJ, TSTG Operating and Storage Temperature -55 to +150 C Thermal Characteristics o R?JC Thermal Resistance Junction to Case 30 C/W o R?JA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 78 C/W Package Marking and Ordering Information Device Marking

1.394. fdmc510p.pdf Size:307K _fairchild_semi

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June 2010 FDMC510P P-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 m? Features General Description Max rDS(on) = 8.0 m? at VGS = -4.5 V, ID = -12 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.8 m? at VGS = -2.5 V, ID = -10 A been optimized for rDS(ON), switching performance and Max rDS(on) = 13 m? at VGS = -1.8 V, ID = -9.3 A ruggedness. Max rDS(on) = 17 m? at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extremely low rDS(on) Applications High power and current handling capability in a widely used Battery Management surface mount package Load Switch 100% UIL Tested Termination is Lead-free and RoHS Compliant HBM ESD capability level >2 KV typical (Note 4) Bottom Top Pin 1 G S S S D D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -20 V VGS Gate to Sour

1.395. ksc5024.pdf Size:58K _fairchild_semi

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KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 20 A IB Base Current 3 A PC Collector Dissipation (TC=25C) 90 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 500 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 7 V VCEX(sus) Collector-Emitter Sustaining Voltage IC = 3.5A, IB1=-IB2=1.4A 500 V L = 500H, Clamped ICBO Collector Cut-off Current VCB = 500V, IE = 0 10

1.396. ksc5030f.pdf Size:142K _fairchild_semi

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KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collector Dissipation (TC = 25C) 60 W TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C * Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity KSC5030F KSC5030FRTU TO3PF - - 50 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSC5030F Rev. A KSC5030F High Voltage Fast Switching Transistor Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO C

1.397. ksc5086_.pdf Size:64K _fairchild_semi

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KSC5086 HIgh Definition Color Display Horizontal Equivalent Circuit Deflection Output C (Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) B TO-3PF 1 50? typ. 1.Base 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25C) 50 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current (VBE=0) VCE = 1400V, RBE = 0 1 mA ICBO Collector Cu-toff Current VCB=800V, IE=0 10 A IEBO Emitter Cut-off Current VEB = 4V, IC = 0 40 200 mA VEBO Base-Emitter B

1.398. ksc5386.pdf Size:764K _fairchild_semi

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KSC5386 High Voltage Color Display Horizontal Equivalent Circuit C Deflection Output (Damper Diode Built In) High Collector-Base Breakdown Voltage : BVCBO=1500V B TO-3PF High Speed Switching : tF=0.1s (Typ) 1 Wide S.O.A 50? typ. 1.Base 2.Collector 3.Emitter For C-Monitor (48KHz) E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings unless otherwise noted TC=25C Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collector Current (Pulse) 16 A PC Collector Dissipation (TC=25C) 50 W TJ Junction Temperature 150 C TSTG Storage Temperature ~ 150 C Electrical Characteristics unless otherwise noted TC=25C Symbol Parameter Test Condition Min. Typ. Max. Units ICES Collector Cut-off Current VCE = 1400V, RBE = 0 1 mA ICBO Collector Cut-off Current VCB = 800V, IE = 0 10 A IEBO Emitter Cut-off Current VEB

1.399. fjaf6810a-j6810a-2sc5936.pdf Size:186K _fairchild_semi

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FJAF6810A High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1550V • High Switching Speed : tF(typ.) =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Rating Units VCBO Collector-Base Voltage 1550 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 10 A ICP* Collector Current (Pulse) 20 A PC Collector Dissipation 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ICES Collector Cut-off Current VCB=1400V, RBE=0 1 mA ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA BVEBO Bas

1.400. bc516.pdf Size:25K _fairchild_semi

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BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1 A PD Total Power Dissipation TA = 25C625 mW TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 C Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units VCEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 30 V VCBO Collector-Base Breakdown Voltage IC = 100A, IE = 0 40 V VEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 10 V ICBO Collector Cutoff Current VCB = 30V, IE = 0 100 nA hFE DC Current Gain IC = 20mA, VCE = 2V 30,00 0 VCE(sat) Collector-Emitter Saturation V

1.401. bc548_bc548a_bc548b_bc548c.pdf Size:21K _fairchild_semi

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Discrete POWER & Signal Technologies BC548 BC548A BC548B BC548C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCES Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Cha

1.402. ksc5042f.pdf Size:56K _fairchild_semi

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KSC5042F High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 100 mA ICP Collector Current (Pulse) 300 mA PC Collector Dissipation (TC=25C) 6 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1500 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 900 V BVEBO Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 900V

1.403. ksc5402dt.pdf Size:220K _fairchild_semi

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December 2009 KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features D-PAK High Voltage High Speed Power Switch Application Equivalent Circuit Wide Safe Operating Area C 1 Built-in Free Wheeling Diode TO-220 Suitable for Electronic Ballast Application B Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 1 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 5 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Power Dissipation(TC=25C) : D-PAK* 30 W : TO-220 50 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C * Pulse Test: Pulse Width=5ms, Duty Cycle<10% Thermal Characteristics TA=25C unless otherwise noted Symbol Parameter Rating Units TO-220

1.404. ksc5039.pdf Size:54K _fairchild_semi

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KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Current 3 A PC Collector Dissipation (TC=25C) 70 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 800 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IC = 1mA, IC=0 7 ICBO Collector Cut-off Current VCB = 500V, IE = 0 10 A IEBO Emitter Cut-off Current VEB = 7V, IC = 0 10 A hFE * DC Current Gain VCE = 5V, IC = 0.3A 10 VCE(sat) * Collec

1.405. ksc5305d.pdf Size:243K _fairchild_semi

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May 2010 KSC5305D NPN Silicon Transistor Features High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equivalent Circuit C B TO-220 1 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage 800 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation (TC=25C) 75 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 to 150 C * Pulse Test : Pulse Width = 5mS, Duty cycles ? 10% Thermal Characteristics Symbol Parameter Rating Units R?jc Therma

1.406. ksc5026m.pdf Size:120K _fairchild_semi

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January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 1.5 A ICP Collector Current (Pulse) 5 A IB Base Current 0.8 A PC Collector Dissipation (TC=25C) 20 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 to 150 C Package Marking and Ordering Information Part Number Marking Package Packing Method Remarks KSC5026MOS* C5026M-O TO-126 BULK * The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5026M Rev. B3 1 KSC5026M NPN Silicon Transistor Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter

1.407. 2sc5242_fja4313.pdf Size:468K _fairchild_semi

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January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A TO-3P 1 High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1962/FJA4213. Thermal and electrical Spice models are available Same transistor is also available in: --TO264 package, 2SC5200/FJL4315 : 150 watts --TO220 package, FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 250 V BVCEO Collector-Emitter Voltage 250 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 17 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25C) 130 W Derate above 25C 1.04 W/C TJ, T

1.408. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

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BC556/557/558/559/560 Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Collector-Emitter Voltage : BC556 -65 V : BC557/560 -45 V : BC558/559 -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA -90 -300 mV (sat) IC= -100mA, IB= -5mA -250 -650 mV VBE (sat) Coll

1.409. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

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BC546/547/548/549/550 Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collector-Emitter Voltage : BC546 65 V : BC547/550 45 V : BC548/549 30 V VEBO Emitter-Base Voltage : BC546/547 6 V : BC548/549/550 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat)

1.410. fdc5614p.pdf Size:140K _fairchild_semi

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February 2002 FDC5614P ? ? ? 60V P-Channel Logic Level PowerTrench? MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 ? @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 ? @ VGS = 4.5 V power management applications. Fast switching speed Applications High performance trench technology for extremely DC-DC converters low RDS(ON) Load switch Power management S D 1 6 D 2 5 G D 3 4 D SuperSOT TM -6 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage V 20 ID Drain Current Continuous (Note 1a) 3 A Pulsed 20 PD Maximum Power Dissipation (Note 1a) 1.6 W (Note 1b) 0.8 TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R?J

1.411. ksc5338d.pdf Size:388K _fairchild_semi

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May 2010 KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation (TC=25C) 75 W TJ Junction Temperature 150 C TSTG Storage Temperature - 55 to 150 C * Pulse Test : Pulse Width = 5ms, Duty Cycle ? 10% Thermal Characteristics Symbol Parameter Rating Units R?jc Junction to Case 1.65 C/W Thermal Resistance R?ja Jun

1.412. ksc5021.pdf Size:302K _fairchild_semi

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October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC Collector Current (DC) 10 A ICP Collector Current (Pulse) IB 2 A Base Current 50 W PC Collector Dissipation (TC=25C) 150 C TJ Junction Temperature - 55 ~ 150 C TSTG Storage Temperature 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5021 Rev. 1.0.0 1 KSC5021 N PN Si l i con Tran si stor Electrical Characteristics TC = 25C unless otherwise noted Symbol Parameter Conditions Min. Typ. Max Units 800 V BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 500 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 V BVEBO Emitter-Base Breakdown Vo

1.413. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

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January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215. Thermal and electrical Spice models are available. Same transistor is also available in: -- TO3P package, 2SC5242/FJA4313 : 130 watts -- TO220 package, FJP5200 : 80 watts -- TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Ratings Units BVCBO Collector-Base Voltage 250 V BVCEO Collector-Emitter Voltage 250 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 17 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25C) 150 W Derate above 25C 1.04 W/C

1.414. fdmc5614p.pdf Size:506K _fairchild_semi

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September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m? Features General Description Max rDS(on) = 100m? at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m? at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wide Low gate charge range of gate drive voltage ratings (4.5V-20V). Fast switching speed High performance trench technology for extremely low rDS(on) Application High power and current handling capability Power management RoHS Compliant Load switch Battery protection Bottom Top 4 5 G D Pin 1 D 3 S 6 G S S S D 2 7 S D D S 8 1 D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage -60 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25C -13.5 -C

1.415. bc547_bc547a_bc547b_bc547c.pdf Size:26K _fairchild_semi

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Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 500 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Cha

1.416. ksc5502d.pdf Size:137K _fairchild_semi

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KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1200 V V CEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 12 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current (DC) 1 A IBP *Base Current (Pulse) 2 A PC Collector Dissipation (TC=25C) 50 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C EAS Avalanche Energy(Tj=25C) 2.5 mJ * Pulse Test : Pulse Width = 5ms, Duty Cycle ? 10% Thermal Characteristics TC=25C unless otherwise noted Symbol Characteristics Rating

1.417. fdc5612.pdf Size:78K _fairchild_semi

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December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 ? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 ? @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) Fast switching speed. specifications. High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low RDS(ON). (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S 1 6 D D 2 5 G D 3 4 D SuperSOTTM -6 TA = 25C unless otherwise noted Absolute Maximum Ratings Symbol Parameter Ratings Units VDSS

1.418. irfk4hc50.pdf Size:162K _international_rectifier

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1.419. irgmc50f.pdf Size:547K _international_rectifier

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PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed Simple Drive Requirements VCES = 600V Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 1.7V G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter Max. Units VCES Co

1.420. irgc5b120ub.pdf Size:15K _international_rectifier

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PD - 94315 IRGC5B120UB IRGC5B120UB IGBT Die in Wafer Form Features GEN5 Non Punch Through (NPT) Technology UltraFast 1200 V 10s Short Circuit Capability C Square RBSOA IC(nom) = 5A Positive VCE(on) Temperature Coefficient VCE(on) typ. = 4.01V @ Benefits IC(nom) @ 25C Benchmark Efficiency above 20KHz UltraFast IGBT Optimized for Welding, UPS, and Induction Heating G Rugged with UltraFast Performance Short Circuit Rated Excellent Current Sharing in Parallel Operation E 150mm Wafer Qualified for Industrial Market Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.54V Min., 3.64V Max. IC = 2.5A, TJ = 25C, VGE = 15V V(BR)CES Collector-to-Emitter Breakdown Voltage 1200V Min. TJ = 25C, ICES = 100A, VGE = 0V VGE(th) Gate Threshold Voltage 4.4V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =125A ICES Zero Gate Voltage Collector Current 5.0 A Max

1.421. irgpc50ud2.pdf Size:214K _international_rectifier

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PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 27A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. O-247AC T Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 55 IC @ TC = 100C Continuous Collector Current 27 ICM Pulsed Collector Current 220 A ILM Clamped Inductive Load Current 220 IF @ TC = 100C

1.422. irg4cc50sb.pdf Size:39K _international_rectifier

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PD- 91829 IRG4CC50SB IRG4CC50SB IGBT Die in Wafer Form C 600 V Size 5 Standard Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 1.1 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Cr-NiV-Ag ( 1kA-2kA-.2.5kA ) Nominal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5226 Minimum Street Width 100 Microns Reject Ink Dot Siz

1.423. irgpc50f.pdf Size:113K _international_rectifier

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PD - 9.695A IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 1.7V G @VGE = 15V, IC = 39A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 39 A ICM Pulsed Collector Current 280 ILM Clamped Inductive Load Current 280 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy

1.424. irg4pc50f.pdf Size:146K _international_rectifier

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D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E Industry standard TO-247AC package n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 39 A ICM Pulsed Collector Current Q 280 ILM Clamped Inductive Load Current R 280 VGE Gate-to-Emitter Voltage 20

1.425. irgcc50ke.pdf Size:19K _international_rectifier

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PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 3.0V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 5.5V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 500 nA Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni-Ag ( 1kA-4kA-6kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (3 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 125mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5103 Minimum Street Width 100 Microns Reject Ink D

1.426. irhn2c50se.pdf Size:32K _international_rectifier

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Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED IRHN2C50SE HEXFET TRANSISTOR IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary ? 600 Volt, 0.60? ?, (SEE) RAD HARD HEXFET ? ? Part Number BVDSS RDS(on) ID International Rectifiers (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE 600V 0.60? 10.4A ure. Additionally, under identical pre- and post-radia- IRHN7C50SE tion test conditions, International Rectifiers RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in Features: gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high Radiation Hardened up to 1 x 105 Rads (Si) as 1 x 1012 Rads (Si)/Sec, and return to normal opera- Single Event Burnout (SEB) Hardened tion within a few microseconds. Since the SEE pro- Single Event Gate Rupture (SEGR) Hardened cess util

1.427. irg4pc50s.pdf Size:164K _international_rectifier

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D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard TO-247AC package @VGE = 15V, IC = 41A E n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 41 A ICM Pulsed Collector Current Q 140 ILM Clamped Inductive Load Current R 140 VGE Gate-to-Emitter Voltage 20 V E

1.428. irgc5b120kb.pdf Size:16K _international_rectifier

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PD - 94314 IRGC5B120KB IRGC5B120KB IGBT Die in Wafer Form Features GEN5 Non Punch Through (NPT) Technology Low VCE(on) 1200 V C 10s Short Circuit Capability IC(nom) = 5A Square RBSOA VCE(on) typ. = 2.55V @ Positive VCE(on) Temperature Coefficient IC(nom) @ 25C Benefits Motor Control IGBT Benchmark Efficiency for Motor Control G Rugged Transient Performance Short Circuit Rated Excellent Current Sharing in Parallel Operation E 150mm Wafer Qualified for Industrial Market Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 1.79V Min., 2.22V Max. IC = 2.5A, TJ = 25C, VGE = 15V V(BR)CES Collector-to-Emitter Breakdown Voltage 1200V Min. TJ = 25C, ICES = 100A, VGE = 0V VGE(th) Gate Threshold Voltage 4.4V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =125A ICES Zero Gate Voltage Collector Current 5.0 A Max. TJ = 25C, VCE = 1200V IGES Gate-to-Emitter

1.429. irgc50b120kb.pdf Size:43K _international_rectifier

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1.430. irg4pc50w.pdf Size:157K _international_rectifier

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D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E Low IGBT conduction losses n-channel Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) TO-247AC Absolute Maximum Ratings Parameter Max. Units

1.431. irg4cc50kb.pdf Size:37K _international_rectifier

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PD- 91774 IRG4CC50KB IRG4CC50KB IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 300 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 11 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni / V-Ag ( 1kA-2kA-2.5kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5253 Minimum Street Width 100 Microns Reject Ink Do

1.432. irhm2c50se.pdf Size:98K _international_rectifier

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PD - 91252A REPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SE IRHM7C50SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary ? 600Volt, 0.6? ?, (SEE) RAD HARD HEXFET ? ? Part Number BVDSS RDS(on) ID International Rectifiers (SEE) RAD HARD technology IRHM2C50SE 600V 0.60? 10.4A HEXFETs demonstrate immunity to SEE failure. Ad- ditionally, under identical pre- and post-irrradiation IRHM7C50SE 600V 0.60? 10.4A test conditions, International Rectifiers RAD HARD HEXFETs retain identical electrical specifications up Features: to 1 x 105 Rads (Si) total dose. No compensation in Radiation Hardened up to 1 x 106 Rads (Si) gate drive circuitry is required. These devices are also Single Event Burnout (SEB) Hardened capable of surviving transient ionization pulses as high Single Event Gate Rupture (SEGR) Hardened as 1 x 1012 Rads (Si)/Sec, and return to normal op- Gamma Dot (Flash X-Ray) Hardened eration within a few microseconds. Since th

1.433. irfpc50.pdf Size:164K _international_rectifier

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1.434. irgc5b60kb.pdf Size:15K _international_rectifier

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PD - 94408 IRGC5B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 5A Low VCE(on) VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E 150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Reference Standard IR Package Part: IRGS5B60KD Qualified for Industrial Market Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 1.0V min, 1.25V max IC = 1A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25C, ICES = 1mA, VGE = 0V VGE(th) Gate Threshold Voltage 3.5V min, 5.5V max VGE = VCE , TJ =25C, IC = 250A ICES Zero Gate Voltage

1.435. irgpc50fd2.pdf Size:215K _international_rectifier

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PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 to VCE(sat) ? 1.7V 10kHz) See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 39A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. O-247AC T Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 39 ICM Pulsed Collector Current 280 A ILM Clamped Inductive Load Current 280 IF @ TC = 100C Di

1.436. irgpc50md2.pdf Size:148K _international_rectifier

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PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast WITH ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 2.0V Optimized for medium operating frequency ( 1 to G 10kHz) See Fig. 1 for Current vs. Frequency curve @VGE = 15V, IC = 35A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25

1.437. irg4pc50ud.pdf Size:213K _international_rectifier

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PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent TO-247AC industry-standard Generation 3 IR IGBT's Absolute M

1.438. irg4mc50u.pdf Size:144K _international_rectifier

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PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- TO-254AA current applications. Absolute Maximum Ratings Parameter Max. Units

1.439. irg4mc50f.pdf Size:142K _international_rectifier

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PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- TO-254AA current applications. Absolute Maximum Ratings Parameter Max. Units VCES C

1.440. irg4pc50kd.pdf Size:374K _international_rectifier

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PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 30A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V

1.441. irgpc50kd2.pdf Size:195K _international_rectifier

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1.442. irg4bac50u.pdf Size:181K _international_rectifier

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PD -93770 PROVISIONAL IRG4BAC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating VCES = 600V frequencies 8-40kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industry Super-220 (TO-273AA) package N-channel Benefits Generation 4 IGBT offers highest efficiency available Optimized for specified application conditions Super-220 (TO-273AA) Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 55 IC @ TC = 100C Continuous Collector Current 27 A ICM Pulsed Collector Current Q 220 ILM Clamped Inductive Load Current R 220 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy S 20 mJ PD @ TC = 25C Maximum Power Dissipation 200 W PD @

1.443. irfk2dc50.pdf Size:165K _international_rectifier

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1.444. irgmvc50u.pdf Size:555K _international_rectifier

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PD -90825A IRGMVC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on) max = 3.0V Ultra Fast operation 10 kHz G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A Ceramic Eyelets E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-258AA Absolute

1.445. irgcc50fe.pdf Size:19K _international_rectifier

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PD-9.1425 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.0V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 5.5V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 500 nA Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni-Ag ( 1kA-4kA-6kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (3 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 125mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5103 Minimum Street Width 100 Microns Reject Ink Dot Siz

1.446. irg4pc50fd.pdf Size:211K _international_rectifier

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PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent TO-247AC industry-standard Generation 3 IR IGBT's Absolute Maxim

1.447. irgpc50s.pdf Size:108K _international_rectifier

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PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 1.6V G @VGE = 15V, IC = 41A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 41 A ICM Pulsed Collector Current 320 ILM Clamped Inductive Load Current 140 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy

1.448. irg4pc50s-p.pdf Size:144K _international_rectifier

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D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard TO-247AC package @VGE = 15V, IC = 41A E Surface Mountable n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Surface Mountable TO-247 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 41 A ICM Pulsed Collector Current Q 140 ILM Clamped Inductive Load Current R 14

1.449. irfpc50pbf.pdf Size:1924K _international_rectifier

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PD - 94934 IRFPC50PbF Lead-Free 1/8/04 Document Number: 91243 www.vishay.com 1 IRFPC50PbF Document Number: 91243 www.vishay.com 2 IRFPC50PbF Document Number: 91243 www.vishay.com 3 IRFPC50PbF Document Number: 91243 www.vishay.com 4 IRFPC50PbF Document Number: 91243 www.vishay.com 5 IRFPC50PbF Document Number: 91243 www.vishay.com 6 IRFPC50PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.50 (.089) - B - - A - 1.50 (.059) 5.50 (.217) 4 20.30 (.800) NOTES: 5.50 (.217) 19.70 (.775) 2X 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 1 2 3 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE - C - TO-247-AC. 14.80 (.583) 4.30 (.170) 14.20 (.559) 3.70 (.145) LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS 2.40 (.094) 0.80 (.031) 1.40 (.056) 1 - Gate 1 - Gate 2.00 (.079) 3X 3X 1

1.450. irg4cc50fb.pdf Size:35K _international_rectifier

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PD- 91828 IRG4CC50FB IRG4CC50FB IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 1.1 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Cr-NiV-Ag ( 1kA-2kA-.2.5kA ) Nominal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5226 Minimum Street Width 100 Microns Reject Ink Dot Size 0.

1.451. irg4bac50s.pdf Size:135K _international_rectifier

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PD - 93771 PROVISIONAL IRG4BAC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry Super-220 (TO-273AA) package @VGE = 15V, IC = 41A E N-channel Benefits Generation 4 IGBT offers highest efficiency Optimized for specific application conditions Super-220 (TO-273AA) Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 70 IC @ TC = 100C Continuous Collector Current 41 A ICM Pulsed Collector Current Q 140 ILM Clamped Inductive Load Current R 140 VGE Gate-to-Emitter Voltage 20 V EARV Reverse Voltage Avalanche Energy S 20 mJ PD @ TC = 25C Maximum Power Dissipation 200 W PD @ TC = 100C Maximum Power Dis

1.452. irgmc50u.pdf Size:547K _international_rectifier

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PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed Simple Drive Requirements VCES = 600V Latch-proof Fast Speed operation 10 kHz VCE(on) max = 3.0V G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-254AA Absolute Maximum Ratings Parameter Max. Units VCES Co

1.453. irg4cc58kb.pdf Size:41K _international_rectifier

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PD- 91870 IRG4CC58KB IRG4CC58KB IGBT Die in Wafer Form C 600 V Size 5.8 Ultra-Fast Speed G Short Circuit Rated 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.5V Max. VGE = VCE , TJ =25C, IC =1.0mA ICES Zero Gate Voltage Collector Current 200 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 11 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Cr-Ni V-Ag ( 1kA-2kA-2.5kA ) Nominal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: .288" x .288" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5348 Minimum Street Width 100 Mic

1.454. irg4pc50u.pdf Size:147K _international_rectifier

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D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Industry standard TO-247AC package n-channel Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25C Continuous Collector Current 55 IC @ TC = 100C Continuous Collector Current 27 A ICM Pulsed Collector Current Q 220 ILM Clamped Inductive Load Current R 220 VGE Gate-to-Emitter V

1.455. irgc50b60kb.pdf Size:15K _international_rectifier

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PD - 94377 IRGC50B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=50A Low VCE(on) VCE(on) typ.=2.0V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Control Applications E 150mm Wafer Rugged Transient Performance Excellent Current Sharing in Parallel Operation Qualified for Industrial Market Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (min, max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 1.0V min, 1.35V max IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V min TJ = 25C, ICES = 1mA, VGE = 0V VGE(th) Gate Threshold Voltage 3.5V min, 5.5V max VGE = VCE , TJ =25C, IC = 250A ICES Zero Gate Voltage Collector Current 20A max TJ = 25C, VCE = 6

1.456. irfpc50a.pdf Size:95K _international_rectifier

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PD- 91898 SMPS MOSFET IRFPC50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58? 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-247AC Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 11 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 7.0 A IDM Pulsed Drain Current 44 PD @TC = 25C Power Dissipation 180 W Linear Derating Factor 1.4 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 4.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS T

1.457. irfk3dc50.pdf Size:163K _international_rectifier

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1.458. irg4bac50w.pdf Size:163K _international_rectifier

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PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features Designed expressly for switch-mode power VCES = 600V supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E Low IGBT conduction losses Latest generation IGBT design and construction offers N-channel tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for Super-220 resonant mode switching as well (up to >300kHz) (TO-273AA) Absolute Maximum Ratings Parameter Max. Units VCES Collector

1.459. irfpc50lc.pdf Size:154K _international_rectifier

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PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

1.460. irgcc50me.pdf Size:19K _international_rectifier

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PD-9.1423 IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.5V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 5.5V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 500 nA Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni-Ag ( 1kA-4kA-6kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (3 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 125mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5103 Minimum Street Width 100 Microns Reject Ink Dot Siz

1.461. irgpc50m.pdf Size:109K _international_rectifier

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PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency VCE(sat) ? 2.2V G curve @VGE = 15V, IC = 35A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high- current applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Coll

1.462. irgc50b120ub.pdf Size:43K _international_rectifier

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1.463. irg4cc50wb.pdf Size:23K _international_rectifier

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PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.3V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 250 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 1.1 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Cr-NiV-Ag ( 1kA-2kA-.2.5kA ) Nominal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5226 Minimum Street Width 100 Microns Reject Ink Dot Size 0

1.464. irfk6hc50.pdf Size:162K _international_rectifier

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1.465. irc540.pdf Size:222K _international_rectifier

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1.466. irgpc50lc.pdf Size:154K _international_rectifier

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PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. Absolute Maximu

1.467. irg4pc50k.pdf Size:115K _international_rectifier

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PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides tighter parameter @VGE = 15V, IC = 30A E distribution and higher efficiency than previous generations n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC50K and IRGPC50M devices TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25C Continuous Collector Current 52 IC @ TC = 100C Con

1.468. irg4cc50ub.pdf Size:35K _international_rectifier

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PD- 91764 IRG4CC50UB IRG4CC50UB IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.0V Max. VGE = VCE , TJ =25C, IC =250A ICES Zero Gate Voltage Collector Current 300 A Max. TJ = 25C, VCE = 600V IGES Gate-to-Emitter Leakage Current 11 A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.257" x 0.260" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5226 Minimum Street Width 100 Microns Reject Ink D

1.469. irgmic50u.pdf Size:318K _international_rectifier

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PD -90813A IRGMIC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on) max = 3.0V G Ultra Fast operation 10 kHz Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-259AA Absolute Maximum Ratings

1.470. irc530.pdf Size:226K _international_rectifier

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1.471. 2sc5005.pdf Size:47K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5005 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. 1.6 0.1 0.8 0.1 2 FEATURES High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) 3 Ultra Super Mini Mold Package. (1.6 mm ? 0.8 mm) 1 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5005 50 pcs./unit Embossed tape 8 mm wide. Pin 3 (Collector) face to 2SC5005 T1 3 kpcs./Reel perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Collector to Base Voltage VCB

1.472. 2sc5337.pdf Size:47K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC4536 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5337 25 pcs (Non reel) Magazine case 2SC5337-T1 1 kpcs/reel 12 mm wide embossed taping Collector face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 250 mA Note Total Power Dissipation Ptot 2.

1.473. 2sc5010.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an NEC proprietary fabrication technique. FEATURES Low Voltage Use. PACKAGE DIMENSIONS High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) in milimeters Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 1.6 0.1 Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 0.8 0.1 High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) 2 Ultra Super Mini Mold Package. ORDERING INFORMATION 3 1 PART QUANTITY PACKING STYLE NUMBER 2SC5010 50 pcs/Unit. Embossed tape 8 mm wide. Pin3(

1.474. 2sc5009.pdf Size:59K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal amplifiers from VHF band to L band. Low in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6 0.1 dynamic range and excellent linearity. This is achieved by direct nitride 0.8 0.1 passivated base surface process (NEST3 process) which is an NEC 2 proprietary new fabrication technique. FEATURES 3 Low Voltage Use. 1 High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Low Cre : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) Low NF : 2.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) High |S21e|2 : 8.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Ultra Super Mini Mold Package. ORDERING INFORMATION PART 1. Emitter QUANTITY PACKING STYLE NUMBER 2. Base 2SC5009 50 pcs./Unit Embo

1.475. 2sc5186.pdf Size:46K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5186 50 pcs (Non reel) 8 mm wide embossed taping 2SC5186-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Note Total Power Dissipation Ptot 90 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Caution Observe precautions when han

1.476. ne856m13_2sc5614.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 1.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 LOW NOISE FIGURE: +0.1 +0.1 1.0 0.7 0.05 3 3 0.2 NF = 1.4 dB at 1 GHz 0.05 0.35 HIGH COLLECTOR CURRENT: IC MAX = 100 mA 1 2 +0.1 0.150.05 0.1 0.1 0.2 DESCRIPTION 0.2 Bottom View +0.1 The NE856M13 transistor is designed for low cost amplifier 0.50.05 0.125 0.05 and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE856 PIN CONNECTIONS is also available in chip, Micro-x, and eight different low cost 1. Emitter plastic surface m

1.477. 2sc5704.pdf Size:101K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5704 50 pcs (Non reel) 8 mm wide embossed taping 2SC5704-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Note Total Power Dissipation Ptot 115 mW Junction Temperat

1.478. 2sc5012.pdf Size:43K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 PART QUANTITY PACKING STYLE NUMBER 1 4 0.4 +0.1 0.05 2SC5012-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5012-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face 0.15 +0.1 0 to 0.1 0.05 to perforation side of the tape. PIN CONNECTIONS * Please contact with responsible NEC person, if you require 1. Collector evaluation sample. Unit sample quantity shall be 50 pcs. 2. Emitter (Part No.: 2SC5012) 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) Collector to Base Voltage VCBO 20

1.479. 2sc5787.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., ?S21e?2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopted High reliability through use of gold electrodes 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5787 50 pcs (Non reel) 8 mm wide embossed taping 2SC5787-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base Voltage VEBO 1.5 V Collector Current

1.480. 2sc5194.pdf Size:65K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5194-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5194-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape. PIN CONNECTIONS Remark If you require an evaluation sample, please contact an NEC 1. Collector 2. Emitter Sales Representative. (Unit sample quantity is 50 pcs.) 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage

1.481. 2sc5754.pdf Size:85K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: ?C = 60% UHS0-HV technology (fT = 25 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5754 50 pcs (Non reel) 8 mm wide embossed taping 2SC5754-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without no

1.482. 2sc5180.pdf Size:46K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low current consumption and high gain (Units : mm) ?S21e? 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz ?S21e? 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.2 Supper Mini-Mold package 1.25 0.1 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER Embossed tape, 8 mm wide, pins No. 3 2SC5180T1 (base) and No. 4 (emitter) facing the perforations 3 000 units/reel Embossed tape, 8 mm wide, pins No. 1 2SC5180T2 (collector) and No. 2 (emitter) facing the perforations * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V PIN CONNECTIONS Collector Current IC 10 mA 1. Collector Total Pow

1.483. 2sc5288.pdf Size:117K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit: mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold Package EIAJ: SC-61 ORDERING INFORMATION Part Number Quantity Packing Style 5 5 2SC5288-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 5 5 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Collector 2. Emitter Parameter Symbol Rating Unit 3. Base 4. Emitter Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 15

1.484. 2sc5006.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES PACKAGE DIMENSIONS Low Voltage Use. in millimeters High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 1.6 0.1 0.8 0.1 Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) High |S21e|2: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 Ultra Super Mini Mold Package. 3 ORDERING INFORMATION 1 PART QUANTITY PACKING STYLE NUMBER 2SC5006 50 pcs./Unit Embossed tape 8 mm wide. Pin3 (Col

1.485. 2sc5007.pdf Size:53K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. FEATURES PACKAGE DIMENSIONS Low Voltage Use. in millimeters High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 1.6 0.1 0.8 0.1 Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) 2 Ultra Super Mini Mold Package. 3 ORDERING INFORMATION 1 PART QUANTITY PACKING STYLE NUMBER 2SC5007 50 pcs./Unit Embossed tape 8 mm wide. Pin3 (C

1.486. 2sc5004.pdf Size:47K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5004 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) 3 Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) 1 Ultra Super Mini Mold Package. (1.6 mm ? 0.8 mm) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE Embossed tape 8 mm wide. 2SC5004 50 pcs./unit Pin 3 (Collector) face to perforation side of the tape. 2SC5004 T1 3 kpcs./Reel * Please contact with responsible NEC person, if you require evaluation PIN CONNECTIONS sample. Unit sample quantity shall be 50 pcs. 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VC

1.487. 2sc5181.pdf Size:44K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.6 0.1 Ultra Super Mini-Mold package 0.8 0.1 2 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 3 1 2SC5181 50 units/box Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation 2SC5181-T1 3 000 units/reel * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 5V PIN CONNECTIONS Collector to Emitter Voltage VCEO 3V 1. Emitter Emitter to Base Voltage VEBO 2V 2. Base 3. Collector Collector Current IC 10 mA Total Power Dissipation PT 30 mW Junction Temperature Tj 150 C Storage Tempera

1.488. 2sc5649_ne856m23.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: 0.4 IC MAX = 100 mA 2 3 0.25 DESCRIPTION 0.2 0.15 0.6 0.15 The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high BOTTOM VIEW current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" PIN CONNECTIONS 1. Collector package is ideal for today's portable wireless applications. The 2. Emitter NE856 is also available in chip, Micro-x, and eight different low 3. Base cost plastic surface mount package styles. ELECTRICAL CHARACTER

1.489. 2sc5008.pdf Size:51K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low 1.6 0.1 noise figure, high gain, and high current capability achieve a very wide 0.8 0.1 dynamic range and excellent linearity. This is achieved by direct nitride 2 passivated base surface, process (NEST2 process) which is an NEC proprietary fabrication technique. 3 FEATURES 1 Low Voltage Use. High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) High |S21e|2: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) Ultra Super Mini Mold Package. ORDERING INFORMATION 1. Emitter 2. Base 3. Collector PART QUANTITY PACKING STYLE NUMBER 2SC5008 50 pcs./Unit

1.490. 2sc5183.pdf Size:60K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.8+0.2 0.3 4-pin Mini-Mold package 1.5+0.2 0.1 EIAJ: SC-61 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 2SC5183-T1 Embossed tape, 8 mm wide, 5? 5? Pin No. 3 (base) and No. 4 (emitter) facing the perforations 3 000 units/reel 2SC5183-T2 Embossed tape, 8 mm wide, 5? 5? Pins No. 1 (collector) and No. 2 (emitter) facing the perforations PIN CONNECTIONS * Contact your NEC sales representatives to order samples for 1. Collector 2. Emitter evaluation (available in batches of 50). 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collec

1.491. 2sc5677.pdf Size:100K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) 8 mm wide embossed taping 2SC5677-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 140 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this product uses high-frequency techno

1.492. 2sc5618.pdf Size:96K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5618 50 pcs (Non reel) 8 mm wide embossed taping 2SC5618-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 30 mA Note Total Power Dissipation Ptot 90 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy PCB Because this product

1.493. 2sc5603.pdf Size:96K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5603 50 pcs (Non reel) 8 mm wide embossed taping 2SC5603-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 35 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C

1.494. 2sc5736.pdf Size:125K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5736 50 pcs (Non reel) 8 mm wide embossed taping 2SC5736-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 5V Emitter to Base Voltage VEBO 3V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Bec

1.495. 2sc5786.pdf Size:95K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., ?S21e?2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopted High reliability through use of gold electrodes Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5786 50 pcs (Non reel) 8 mm wide embossed taping 2SC5786-T1 3 kpcs/reel Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 3.0 V Emitter to Base

1.496. 2sc5437.pdf Size:60K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5195 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5437 50 pcs (Non reel) 8 mm wide embossed taping 2SC5437-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 100 mA Note Total Power Dissipation Ptot 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive static

1.497. 2sc5435.pdf Size:55K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5010 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5435 50 pcs (Non reel) 8 mm wide embossed taping 2SC5435-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Note Total Power Dissipation Ptot 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive static

1.498. 2sc5667.pdf Size:86K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold (t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5667 50 pcs (Non reel) 8 mm wide embossed taping 2SC5667-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collect

1.499. 2sc5737.pdf Size:97K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5737 50 pcs (Non reel) 8 mm wide embossed taping 2SC5737-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Note Total Power Dissipation Ptot 90 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because

1.500. 2sc5193.pdf Size:55K _nec

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DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 2 Compact Mini Mold Package EIAJ: SC-70 3 1 ORDERING INFORMATION PART Marking QUANTITY PACKING STYLE NUMBER 2SC5193-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (collector) face to perforation side of the tape. 2SC5193-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2 (Base) face to perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS Sales Representative. (Unit sample quantity is 50 pcs.) 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATI

1.501. 2sc5752.pdf Size:88K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5752 50 pcs (Non reel) 8 mm wide embossed taping 2SC5752-T1 3 kpcs/reel Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj

1.502. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

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NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to 32 (TO-92) 34 (SOT 89 STYLE) wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost. This is achieved by NEC's titanium/platinum/gold metallization sys- tem and their direct nitride passivated base surface process. The NE856 series is available in chip form and a Micro-x package for high frequency applications. It is also available in several low cost plastic package styles. 19 (3 PIN ULTRA SUPER 18 (SOT 343 STYLE) MINI MOLD) NE85600 NOISE FIGURE AND GAIN vs.

1.503. 2sc5013.pdf Size:44K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 PART QUANTITY PACKING STYLE NUMBER 1 4 0.4 +0.1 0.05 2SC5013-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC5013-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. 0.15 +0.1 0 to 0.1 0.05 Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. PIN CONNECTIONS * Please contact with responsible NEC person, If you require 1. Collector evaluation sample. Unit sample quantity shall be 50 pcs. 2. Emitter (Part No.: 2SC5013) 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) Collector to Base Voltage VCBO 20

1.504. 2sc5289.pdf Size:114K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit: mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold Package EIAJ: SC-61 ORDERING INFORMATION Part Number Quantity Packing Style 5 5 2SC5289-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 5 5 Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Collector 2. Emitter Parameter Symbol Rating Unit 3. Base 4. Emitter Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 30

1.505. 2sc5336.pdf Size:47K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain: ?S21e?2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) Magazine case 2SC5336-T1 1 kpcs/reel 12 mm wide embossed taping Collector face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 1.2 W Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 16 cm2 ? 0.7 mm (t) ceramic substrate (Co

1.506. 2sc5652_ne685m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.4 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 2 3 0.25 DESCRIPTION 0.2 The NE685M23 transistor is designed for low noise, high gain, 0.15 0.6 0.15 and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless BOTTOM VIEW communications and cellular radio applications. NEC's new low profile/ceramic substrate style "M23" package is ideal for PIN CONNECTIONS 1. Collector today's portable wireless applications. The NE685 is also 2. Emitter available in six different low cost plastic surface mount pack- 3. Base age styles. EL

1.507. 2sc5014.pdf Size:49K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC5014-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 2SC5014-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. * Please contact with responsible NEC person, if you require evaluation sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Collector Collector to Base Voltage VCBO 9V 2. Emitter Collector to Emitter Voltage VCEO 6V 3. Base 4. Emitter Emitter to Base Voltage VEBO 2V Collector Current IC 10

1.508. 2sc5191.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin minimold Package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5191 50 pcs (Non reel) 8 mm wide embossed taping Pin 3 (collector) face to perforation side of the tape 2SC5191-T1B 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature

1.509. 2sc5433.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5007 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5433 50 pcs (Non reel) 8 mm wide embossed taping 2SC5433-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 65 mA Note Total Power Dissipation Ptot 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive

1.510. 2sc5674.pdf Size:100K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5674 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 21.0 GHz TYP., ?S21e?2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 3-pin lead-less minimold package (1005 PKG) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5674 50 pcs (Non reel) 8 mm wide embossed taping 2SC5674-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Note Total Power Dissipation Ptot 115 mW Junction Temperature Tj 150 C Sto

1.511. 2sc5656.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5656 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 ? 0.6 ? 0.5 mm) NF = 1.3 dB TYP., ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC5656-T1 10 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 35 mA Note Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this product uses high-fr

1.512. 2sc5436.pdf Size:69K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5186 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5436 50 pcs (Non reel) 8 mm wide embossed taping 2SC5436-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Note Total Power Dissipation Ptot 90 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive static e

1.513. 2sc5668.pdf Size:87K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA High fT: fT = 21 GHz TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5668 50 pcs (Non reel) 8 mm wide embossed taping 2SC5668-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Coll

1.514. 2sc5753.pdf Size:85K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5753 50 pcs (Non reel) 8 mm wide embossed taping 2SC5753-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 100 mA Note Total Power Dis

1.515. 2sc5746.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5746 50 pcs (Non reel) 8 mm wide embossed taping 2SC5746-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 140 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy PCB Because this product uses high-frequency technology,

1.516. 2sc5800.pdf Size:104K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm wide embossed taping 2SC5800-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy PCB Be

1.517. 2sc5507.pdf Size:91K _nec

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PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA fT = 25 GHz technology Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Packaging Style 2SC5507 Loose product (50 pcs) 8 mm wide emboss taping 1 pin (emitter), 2 pin (collector) feed hole direction 2SC5507-T2 Taping product (3 kpcs/reel) Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units). ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 12 mA Note Total P

1.518. 2sc5843.pdf Size:59K _nec

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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz, fmax = 60 GHz) 6-pin lead-less minimold (M16, 1208 package) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5843 50 pcs (Non reel) 8 mm wide embossed taping 2SC5843-T3 10 kpcs/reel Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 8.0 V Collector to Emitter Voltage VCEO 2.3 V Emitter to Base Voltage VEBO 1.2 V Collector Current

1.519. 2sc5454.pdf Size:79K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise +0.2 2.8 0.3 +0.2 Small reverse transfer capacitance 1.5 0.1 Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V 5 5 Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 50 mA Total Power Dissipation PT 200 mW 5 5 Junction Temperature Tj 150 C PIN CONNECTIONS Storage Temperature Tstg 65 to +150 C 1: Collector 2: Emitter 3: Base ELECTRICAL CHARACTERISTICS (TA = 25 C) 4: Emitter PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 A DC Current Gain hFE VCE = 3 V, IC = 20 mANote 1 75 150 Gain Bandwidth Product fT VCE = 3 V, IC = 20 mA, f = 2 GHz 14.5 GHz Reverse Transfe

1.520. ne58219_2sc5004.pdf Size:1827K _nec

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DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES High fT : 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz) 3 Low Cre : 0.9 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz) 1 Ultra Super Mini Mold Package. (1.6 mm ? 0.8 mm) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE NE58219 Embossed tape 8 mm wide. 50 pcs./unit 2SC5004 Pin 3 (Collector) face to NE58219-T1 perforation side of the tape. 3 kpcs./Reel 2SC5004-T1 * Please contact with responsible NEC person, if you require evaluation PIN CONNECTIONS sample. Unit sample quantity shall be 50 pcs. 1. Emitter 2. Base 3. Collector ABSOLUTE MAXIMUM RATINGS

1.521. 2sc5184.pdf Size:58K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.1 Super Mini-Mold package 1.25 0.1 EIAJ: SC-70 ORDERING INFORMATION 2 PART 3 QUANTITY ARRANGEMENT 1 NUMBER 2SC5184-T1 3 000 units/reel Embossed tape, 8 mm wide, Pin No. 3 (collector) Marking facing the perforations 2SC5184-T2 3 000 units/reel Embossed tape, 8 mm wide, Pins No. 1 (emitter) and No. 2 (base) facing the perforations Remark: Contact your NEC sales representative to order samples for evaluation (available in batches of 50). PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) 1. Emitter Collector to Base Voltage VCBO 5V 2. Base Collector to Emitter Voltage VCEO 3V 3. Collector Emitter to Base Voltage VEBO 2V Collector Current

1.522. 2sc5801.pdf Size:33K _nec

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1.523. 2sc5617.pdf Size:103K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz ?S21e?2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5617 50 pcs (Non reel) 8 mm wide embossed taping 2SC5617-T3 10 kpcs/reel Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 30 mA Note Total Power Dissipation Ptot 140 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy PCB Because this

1.524. 2sc5600.pdf Size:98K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5600 50 pcs (Non reel) 8 mm wide embossed taping 2SC5600-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this product us

1.525. 2sc5177.pdf Size:56K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.80.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ: SC-59 ORDERING INFORMATION 2 PART QUANTITY ARRANGEMENT NUMBER 3 1 2SC5177-T1 3 000 units/reel Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforations Marking 2SC5177-T2 3 000 units/reel Embossed tape, 8 mm wide, pins No. 1 (emitter) and No. 2 (base) facing the perforations Remark Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter Collector to Base Voltage VCBO 5V 2. Base Collector to Emitter Voltage VCEO 3V 3. Collector Emitter to Base Voltage V

1.526. 2sc5182.pdf Size:56K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.80.2 Mini-Mold package +0.1 1.5 0.65 0.15 EIAJ: SC-59 ORDERING INFORMATION 2 PART QUANTITY ARRANGEMENT 3 NUMBER 1 2SC5182-T1 Embossed tape, 8 mm wide, Pin No. 3 (Collector) facing the perforations 3 000 units/reel Marking 2SC5182-T2 Embossed tape, 8 mm wide, Pins No. 1 (Emitter) and No. 2 (Base) facing the perforations * Contact your NEC sales representative to order samples for evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 ?C) PIN CONNECTIONS Collector to Base Voltage VCBO 5V 1. Emitter Collector to Emitter Voltage VCEO 3V 2. Base 3. Collector Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power D

1.527. 2sc5409.pdf Size:39K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 16 GHz TYP. 2.10.1 High gain 1.250.1 |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5409-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales person- nel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS E: Emitter PARAMETER SYMBOL RATING UNIT C: Collector Collector to Base Voltage VCBO 5V B: Base Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Because this product uses high-frequency proces

1.528. 2sc5012_2sc5007_2sc4227_2sc3583_2sc3604_2sc4094_ne681.pdf Size:218K _nec

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NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- tions. Both the chip and micro-x versions are suitable for 19 (3 PIN ULTRA amplifier applications up to 4 GHz. The NE681 die is also 18 (SOT 343 STYLE) SUPER MINI MOLD) available in six different low cost plastic surface mount pack- age styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. 33 (SOT 23 STYLE) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY VCE = 3 V, IC = 5 mA MSG 20 MAG 3.0 10 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 2.0 0 GA NF 1.0 0.5 1.0 2.0 3.0 Freque

1.529. 2sc5650_ne681m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT: 1 fT = 7 GHz LOW NOISE FIGURE: 0.4 NF = 1.4 dB 2 3 0.25 DESCRIPTION 0.2 0.15 0.6 0.15 The NE681M23 transistor is ideal for low noise, high gain, BOTTOM VIEW and low cost amplifier applications. NEC's new low profile/ ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE681 is also available PIN CONNECTIONS in chip, Micro-x, and six different low cost plastic surface 1. Collector mount package styles. 2. Emitter 3. Base ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE681M23 EIAJ1 REGISTERED NUMBER 2SC5650 PACKAGE OUTLINE M23 SYMBOLS PARAMETER

1.530. ne661m04_2sc5507.pdf Size:35K _nec

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PRELIMINARY DATA SHEET NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRIPTION M04 The NE661M04 is fabricated using NEC's state-of-art UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 10 mA provides a device with a usable current range of 100 A to 8 mA. The NE661M04 provides excellent low voltage/low current perfor- mance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NE661M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. ELECTRICAL CHA

1.531. 2sc5750.pdf Size:78K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5750 50 pcs (Non reel) 8 mm wide embossed taping 2SC5750-T1 3 kpcs/reel Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 50 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj

1.532. 2sc5599.pdf Size:101K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed taping 2SC5599-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this pro

1.533. 2sc5369.pdf Size:60K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION (in mm) High fT 2.10.1 14 GHz TYP. 1.250.1 High gain | S21e | 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 150 mW PIN CONNECTIONS Junction Temperature TI 150 C 1. Emitter 4. Emitter Storage Temperature Tstg 65 to +150 C 2. Emitter 5. Emitter 3. Base 6. Collector Document No. P11644EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan 1996 +0.1 0 0.2 1.3 2.00.2 0.65 0.65 3 2 1 4 5 6 0.7 0.90.1 +0.1 0 0.15 0 to 0.1 2SC5369 ELECTRICAL CHARACTERISTICS (TA = 25 C) PAR

1.534. 2sc5432.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5006 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5432 50 pcs (Non reel) 8 mm wide embossed taping 2SC5432-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3V Collector Current IC 100 mA Note Total Power Dissipation Ptot 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive st

1.535. 2sc5761.pdf Size:75K _nec

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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise ? high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz, fmax = 60 GHz) Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5761 50 pcs (Non reel) 8 mm wide embossed taping 2SC5761-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 8.0 V Collector to Emitter Voltage VCEO 2.3 V Emitter to Base Voltage VEBO 1.2 V Collector Current IC 3

1.536. 2sc5178.pdf Size:82K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +0.2 0.1 EIAJ: SC-61 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 2SC5178-T1 3000 units/reel Embossed tape, 8 mm wide, pins No. 3 (base) and No. 4 (emitter) facing 5 5 the perforations 2SC5178-T2 3000 units/reel Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations 5 5 * Contact your NEC sales representatives to order samples for PIN CONNECTIONS evaluation (available in batches of 50). 1. Collector 2. Emitter 3. Base ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 4. Emitter Collector to Base Voltage VCBO 5V Collector to Emi

1.537. 2sc5195.pdf Size:54K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact Mini Mold Package 3 1 ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5195 In-bulk products Embossed tape 8 mm wide. (50 pcs.) Pin 3 (Collector) face to perforation side of the tape. 2SC5195-T1 Taped products (3 Kpcs/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter 2. Base PARAMETER SYMBOL RATING UNIT 3. Collector Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collect

1.538. 2sc5179.pdf Size:57K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.10.1 Small Mini-Mold package 1.250.1 EIAJ: SC-70 ORDERING INFORMATION 2 PART QUANTITY ARRANGEMENT 3 NUMBER 1 2SC5179-T1 Embossed tape, 8 mm wide, pin No. 3 (Collector) facing the perforations 3000 units/reel Marking 2SC5179-T2 Embossed tape, 8 mm wide, pins No. 1 (Emitter) and No. 2 (Base) facing the perforations * Contact your NEC sales representatives to order samples for evaluation (available in batches of 50). PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS (TA = 25 C) 1. Emitter Collector to Base Voltage VCBO 5V 2. Base Collector to Emitter Voltage VCEO 3V 3. Collector Emitter to Base Voltage VEBO 2V Collector Curren

1.539. 2sc5508.pdf Size:76K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5508 50 pcs (Non reel) 8 mm wide embossed taping 2SC5508-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5

1.540. 2sc5615.pdf Size:126K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed (1.0 ? 0.5 ? 0.5 mm) • NF = 1.4 dB TYP., ?S21e?2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5615 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5615-T3 10 kpcs/reel • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25° °C) ° ° Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 65 mA Note Total Power Dissipation Ptot 140 mW Junction Temperature Tj 150 °C Storage Temperature Tstg -65 to +150 °C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy PCB Becau

1.541. 2sc5653_ne687m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz LOW NOISE FIGURE: 0.4 NF = 1.5 dB at 2 GHz 2 3 0.25 DESCRIPTION 0.2 0.15 0.6 0.15 The NE687M23 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for BOTTOM VIEW very low voltage/low current designs for portable wireless PIN CONNECTIONS communications and cellular radio applications. NEC's new 1. Collector low profile/ceramic substrate style "M23" package is ideal for 2. Emitter today's portable wireless applications. The NE687 is also 3. Base available in six different low cost plastic surface mount pack- age styles. E

1.542. 2sc5185.pdf Size:50K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.2 Super Mini-Mold package 1.25 0.1 ORDERING INFORMATION PART QUANTITY ARRANGEMENT NUMBER 2SC5185-T1 Embossed tape, 8 mm wide, pins No. 3 (base), and No. 4 (emitter) facing the perforations 3 000 units/reel 2SC5185-T2 Embossed tape, 8 mm wide, pins No. 1 (collector) and No. 2 (emitter) facing the perforations * Contact your NEC sales representative to order samples for evaluation. ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 5V PIN CONNECTIONS Collector to Emitter Voltage VCEO 3V 1. Collector Emitter to Base Voltage VEBO 2V 2. Emitter 3. Base Collector Current IC 30 mA 4. Emitter Total Power Dissipation PT 90 mW Junction Temper

1.543. 2sc5655.pdf Size:93K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 ? 0.6 ? 0.5 mm) NF = 1.5 dB TYP., ?S21e?2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC5655-T1 10 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this product uses hig

1.544. 2sc5455.pdf Size:79K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications +0.2 2.8 0.3 +0.2 High gain, low noise 1.5 0.1 Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V 5 5 Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 100 mA 5 5 Total Power Dissipation PT 200 mW Junction Temperature Tj 150 C PIN CONNECTIONS 1: Collector Storage Temperature Tstg 65 to +150 C 2: Emitter 3: Base 4: Emitter ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 A DC Current Gain hFE VCE = 3 V, IC = 30 mANote 1 75 150 Gain Bandwidth Product fT VCE = 3 V, IC = 30

1.545. 2sc5751.pdf Size:78K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5751 50 pcs (Non reel) 8 mm wide embossed taping 2SC5751-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9.0 V Collector to Emitter Voltage VCEO 6.0 V Emitter to Base Voltage VEBO 2.0 V Collector Current IC 50 mA Note Total Power Diss

1.546. 2sc5651_ne688m23.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: 0.25 1 fT = 9.5 GHz LOW NOISE FIGURE: 0.4 NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: 2 3 0.25 IC MAX = 100 mA 0.2 0.15 DESCRIPTION 0.6 0.15 The NE688M23 transistor is designed for low cost amplifier BOTTOM VIEW and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent PIN CONNECTIONS linearity. NEC's new low profile/ceramic substrate style "M23" 1. Collector package is ideal for today's portable wireless applications. The 2. Emitter NE688 is also available in chip and six different low cost plastic 3. Base surface mount pac

1.547. 2sc5509.pdf Size:81K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz fT = 25 GHz technology adopted Flat-lead 4-pin thin-type super minimold (M04) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5509 50 pcs (Non reel) 8 mm wide embossed taping 2SC5509-T2 3 kpcs/reel Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage V

1.548. 2sc5338.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain: ?S21e?2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75? 4-pin power minimold package with improved gain from the 2SC4703 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5338 25 pcs (Non reel) Magazine case 2SC5338-T1 1 kpcs/reel 12 mm wide embossed taping Collector face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 2.5 V Collector Current IC 150 mA Note Total Power Dissipation Ptot 1.8 W Junction Temperatu

1.549. 2sc5616_ne688m13.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 0.150.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT: +0.1 +0.1 1.0 0.7 0.05 3 3 0.2 0.05 fT = 9.5 GHz 0.35 LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1 2 HIGH COLLECTOR CURRENT: +0.1 0.150.05 0.1 0.1 0.2 IC MAX = 100 mA 0.2 Bottom View DESCRIPTION +0.1 0.50.05 0.125 0.05 The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package PIN CONNECTIONS 1. Emitter is ideal for today's portable wireless applications. The NE688 2. Base is also available in chip an

1.550. 2sc5615_ne681m13.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 0.150.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT: +0.1 +0.1 1.0 0.7 0.05 3 3 0.2 fT = 7 GHz 0.05 0.35 LOW NOISE FIGURE: NF = 1.4 dB 1 2 +0.1 0.150.05 0.1 0.1 0.2 0.2 DESCRIPTION Bottom View +0.1 0.50.05 0.125 The NE681M13 transistor is ideal for low noise, high gain, 0.05 and low cost amplifier applications. NEC's new low profile/ flat lead style "M13" package is ideal for today's portable wireless applications. The NE681 is also available in chip, PIN CONNECTIONS Micro-x, and six different low cost plastic surface mount 1. Emitter package styles. 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER NE681M13 EIAJ1

1.551. 2sc5745.pdf Size:118K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5745 50 pcs (Non reel) 8 mm wide embossed taping 2SC5745-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrat

1.552. 2sc5015.pdf Size:49K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5015 50 pcs (Non reel) 8 mm wide embossed taping 2SC5015-T1 3 kpcs/reel Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Caution Observe precautions when handling

1.553. 2sc5434.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5008 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5434 50 pcs (Non reel) 8 mm wide embossed taping 2SC5434-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Note Total Power Dissipation Ptot 125 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Free air Because this product uses high-frequency technology, avoid excessive

1.554. 2sc5408.pdf Size:50K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 17 GHz TYP. 2.10.1 High gain 1.250.1 |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE 2SC5408-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin (collector) feed hole direction Remark To order evaluation samples, consult your NEC sales person- nel (supported in 50-pcs units). ABSOLUTE MAXIMUM RATINGS PIN CONNECTIONS E: Emitter PARAMETER SYMBOL RATING UNIT C: Collector Collector to Base Voltage VCBO 5V B: Base Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 10 mA Total Power Dissipation PT 30 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Because this product uses high-frequency proce

1.555. 2sc5602.pdf Size:105K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5602 50 pcs (Non reel) 8 mm wide embossed taping 2SC5602-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage VEBO 2V Collector Current IC 35 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -6

1.556. 2sc5192.pdf Size:68K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Mini Mold Package EIAJ: SC-61 ORDERING INFORMATION 5? 5? PART NUMBER QUANTITY PACKING STYLE 2SC5192-T1 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. 2SC5192-T2 3 Kpcs/Reel Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to 5? 5? perforation side of the tape. Remark If you require an evaluation sample, please contact an NEC PIN CONNECTIONS 1. Collector Sales Representative. (Unit sample quantity is 50 pcs.) 2. Emitter 3. Base 4. Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAME

1.557. 2sc5676.pdf Size:97K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5676 50 pcs (Non reel) 8 mm wide embossed taping 2SC5676-T1 3 kpcs/reel Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 5.5 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate

1.558. 2sc5011.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package PACKAGE DIMENSIONS • High Gain Bandwidth Product in millimeters (fT = 6.5 GHz TYP.) 2.1 ± 0.2 • Low Noise, High Gain 1.25 ± 0.1 0.3 +0.1 –0.05 • Low Voltage Operation (LEADS 2, 3, 4) 2 3 ORDERING INFORMATION PART 1 4 QUANTITY PACKING STYLE 0.4 +0.1 –0.05 NUMBER 2SC5011-T1 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. 0.15 +0.1 0 to 0.1 –0.05 2SC5011-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Collector), Pin2 (Emitter) face to perforation side of the tape. PIN CONNECTIONS 1. Collector * Please contact with responsible NEC person, if you require 2. Emitter evaluation sample. It is available for 50 pcs. one unit sample lot. 3. Base 4. Emitter (Part No.: 2SC5011) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Coll

1.559. 2sc5606.pdf Size:67K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimold ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5606 50 pcs (Non reel) 8 mm wide embossed taping 2SC5606-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Note Total Power Dissipation Ptot 115 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C Note Mounted on 1.08 cm2 ? 1.0 mm (t) glass epoxy substrate Because this product uses high-freq

1.560. 2sc5431.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3V Collector Current IC 60 mA Note Total Power Dissipation Ptot 100 mW Junction Temperature Tj 125 C Storage Temperature Tstg -65 to +125 C Note Free air Because this product uses high-frequency technology, avoid excessive static electricity, etc.

1.561. ksc5086.pdf Size:20K _samsung

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NPN TRIPLE DIFFUSED KSC5086 PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY TO-3PF HORIZONTAL DEFLECTION OUTPUT (DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 6 V Collector Current (DC) IC 7 A Collector Current (Pulse) IC 16 A 1. Base 2. Collector 3. Emitter Collector Dissipation (TC=25 ) PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current (VBE=0) ICES VCE = 1400V, RBE = 0 1 mA Collector Cutoff Current ICBO VCB=800V, IE=0 10 uA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 40 200 mA Base Emitter Breakdown Voltage VEBO IE = 250mA, IC = 0 6 V DC Current Gain hFE VCE = 5V, IC = 1.0A 8 Collector

1.562. ksc5039f.pdf Size:24K _samsung

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KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1 . Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (Tc=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector- Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector- Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V Emitter- Base Breakdown Voltage BVEBO IC = 1mA, IC = 0 7 Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA DC Current Gain hFE VCE = 5V, IC = 0.3A 10 Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB

1.563. ksc5337f.pdf Size:26K _samsung

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KSC5337F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Vltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current IB 4 W Collector Dissipation (TC=25 ) PC 40 1 . Base 2. Collector 3. Emitter Juncction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (Tc=25 ) Characteristic Symbol Test Condition Min Typ Max Unit BVCBO IC = 1 , IE = 0 V Collector Base Breakdown Voltage 700 BVCEO IC = 5 , IB = 0 V 400 Collector Emitter Sustaining Voltage ICBO VCB = 700V, RBE = 0, IB=0 100 Collector Emitter Sustaning Voltage IEBO VEB = 9V, IC = 0 10 DC Current Gain hFE VCE = 5V, IC = 0.5A 15 40 VCE = 1V, IC = 3A 8 Collector Emitter Saturation Voltage VCE(sat) IC = 1.3A, IB = 0.13A

1.564. ksc5321f.pdf Size:29K _samsung

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NPN TRIPLE DIFFUSED KSC5321F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A Pulse IBP 4 1.Base 2.Collector 3. emitter Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 Pulse Test : Pulse Width=5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS ) (T =25 C Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 - - V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 500 - - V Emitter Base Breakdown Voltage BVEBO IC =1mA, IC = 0 7 - - V Collector Cutoff Current ICBO VCB = 800V, IE = 0 - - 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 - -

1.565. ksc5027f.pdf Size:74K _samsung

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KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1 . Base 2. Collector 3. Emitter ELECTRICAL CHARACTERISTICS (Tc=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1100 V Collector Emitter Sustaining Voltage BVCEO IC = 5mA, RBE = 800 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX (sus) IC = 1.5A, IB1 = -IB2 = 0.3A 800 V L = 2mH, Clamped Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V,

1.566. ksc5027.pdf Size:24K _samsung

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KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter Collector Dissipation ( TC=25 ) PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1100 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 800 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX(sus) IC = 1.5A, IB1 = -IB2 = 0.3A 800 V L = 2mH, Clamped Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0

1.567. ksc5021p.pdf Size:72K _samsung

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KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING : tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collector 3.Emitter Collector Dissipation ( TC=25 ) PC 50 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 ELECTRICAL CHARACTERISTICS (Tc =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 500 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX(sus) IC = 2.5A, IB1 = -IB2 = 1A 500 V L = 1mH, Clamped Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB =

1.568. ksc5338.pdf Size:23K _samsung

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KSC5338 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A 1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A Base Current (Pulse) IB 4 A Collector Dissipation (TC=25 ) PC 100 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 700 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB =0 400 V Emitter-Base Breakdown Voltage BVCBO IC=1mA, IE=0 9 V Collector Cutoff Current ICBO VCB = 800V, VBE = 0 10 uA Emitter Cutoff Current IEBO VEB = 9V, IC = 0 10 uA DC Current Gain hFE1 VCE = 5V, IC = 0.5A 15 30

1.569. ksc5321.pdf Size:28K _samsung

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NPN TRIPLE DIFFUSED KSC5321 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A 1.Base 2.Collector 3.Emitter Pulse IBP 4 Collector Dissipation (TC=25 ) PC 100 W Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 Pulse Test : Pulse Width = 5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS ) (T =25 C Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 - - V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 500 - - V Emitter Base Breakdown Voltage BVEBO IC =1mA, IC = 0 7 - - V Collector Cutoff Current ICBO VCB = 800V, IE = 0 - - 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 -

1.570. ksc5338f.pdf Size:23K _samsung

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KSC5338F NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A 1.Base 2.Collector 3. Emitter Base Current (Pulse) IB 4 A Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 700 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB =0 400 V Emitter Base Breakdown Voltage BVCBO IC=1mA, IE=0 9 V Collector Cutoff Current ICBO VCB = 800V, VBE = 0 10 uA Emitter Cutoff Current IEBO VEB = 9V, IC = 0 10 uA DC Current Gain hFE1 VCE = 5V, IC = 0.5A 15 3

1.571. ksc5367f.pdf Size:27K _samsung

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NPN TRIPLE DIFFUSED KSC5367F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY High speed Switching TO-220F Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6 Base Current DC IB 2 A 1.Base 2.Collector 3. emitter Pulse IBP 4 Collector Dissipation (TC=25 ) PC 40 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 Pulse Test : Pulse Width=5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 0.5mA, IE = 0 1600 - - V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 800 - - V Emitter Base Breakdown Voltage BVEBO IC =0.5mA, IC = 0 12 - - V Collector Cutoff Current ICBO VCB = 1,600V, IE = 0 - - 20 uA Emitter Cuto

1.572. ksc5030pwd.pdf Size:24K _samsung

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KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 100 W 1.Base 2.Collector 3.Emitter Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1100 V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, RBE = 800 V Emitter Base Breakdown Voltage BVEBO IE = 1mA, IC = 0 7 V Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB2 = 0.6A 800 V L = 2mH, Clamped Collector Cutoff Current ICBO VCB = 800V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 10 uA DC Cu

1.573. ksc5039.pdf Size:23K _samsung

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KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W 1.Base 2.Collector 3.Emitter Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 800 V Collector-Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 400 V Emitter-Base Breakdown Voltage BVEBO IC = 1mA, IC=0 7 Collector Cutoff Current ICBO VCB = 500V, IE = 0 10 uA Emitter Cutoff Current IEBO VEB = 7V, IC = 0 10 uA DC Current Gain hFE VCE = 5V, IC = 0.3A 10 Collector Emitter Saturation Voltage VCE(sat) IC = 2.5A, IB = 0.5A 1.5 V V

1.574. ksc5338d.pdf Size:153K _samsung

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KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram Emitter Base Voltage VEBO 9V C(2) Collector Current DC IC 5A *Pulse ICP 10 A Base Current DC IB 2A *Pulse IBP 4A (1) PC 75 W Power Dissipation(Tc=25 ) B Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 (3) ELECTRICAL CHARACTERISTICS (TC=25 ) E Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=1 , IE=0 1000 - - V Collector Emitter Breakdown Voltage BVCEO IC=5 , IB=0 450 - - V Emitter Cutoff Current BVEBO IE=1 , IC=0 12 - - V Collextor Cutoff Current ICBO VCB=800V, IE=0 - - 10 Emitter Cutoff Current IEBO VEB =

1.575. ksc5337.pdf Size:25K _samsung

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NPN TRIPLE DIFFUSED KSC5337 PLANER SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current IB 4 W Collector Dissipation (TC=25 ) PC 100 Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltge V BVCBO IC = 1 , IE = 0 700 Collector Emitter Breakdown Voltage V BVCEO IC = 5 , IB =0 400 100 Collector Cut off Current ICBO VCB = 700V, RBE = 0, IB=0 10 Emitter Cutoff Current IEBO VEB = 9V, IC = 0 40 DC Current Gain hFE VCE = 5V, IC = 0.5A 15 VCE = 1V, IC = 3A 8 Collector Emitter Saturation Voltage V VCE(sat) IC =

1.576. ksc5367.pdf Size:31K _samsung

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NPN TRIPLE DIFFUSED KSC5367 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6 1.Base 2.Collector 3.Emitter Base Current DC IB 2 A Pulse IBP 4 Collector Dissipation (TC=25 ) PC 80 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 Pulse Test : Pulse Width=5ms, Duty Cycle 10% ELECTRICAL CHARACTERISTICS (TC=25 ) Characteristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC = 1mA, IE = 0 1600 - - V Collector Emitter Breakdown Voltage BVCEO IC = 5mA, IB = 0 800 - - V Emitter Base Breakdown Voltage BVEBO IC =0.5mA, IC = 0 12 - - V Collector Cutoff Current ICBO VCB = 1,600V, IE = 0 - - 20 uA Emitter Cutoff C

1.577. 2sc5824.pdf Size:934K _rohm

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Power transistor (60V, 3A) 2SC5824 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) MPT3 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. (1)Base(Gate) Each lead has same dimensions ?Applications (2)Collector(Drain) (3)Emitter(Sourse) Abbreviated symbol : UP Low frequency amplifier High speed switching ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code T100 Basic ordering unit 1000 (pieces) 2SC5824 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 3 A Collector current ?1 ICP 6 A ?2 PC 500 mW Power dissipation ?3 PC 2.0 W Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Pw

1.578. 2sc5161.pdf Size:74K _rohm

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2SC5161 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5161 External dimensions (Units : mm) Features 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) 2.3+0.2 6.50.2 -0.1 C0.5 (Ic / IB =1A / 0.2A) 5.1+0.2 0.50.1 -0.1 2) High breakdown voltage. BVCEO = 400V 3) Fast switching. 0.650.1 0.75 tf ? 1.0s (Ic = 0.8A) 0.9 0.50.1 2.30.2 2.30.2 1.00.2 Structure (1) (2) (3) Three - layer, diffused planar type. NPN silicon transistor. (1) Base ROHM : CPT 3 (2) Collector EIAJ : SC-63 (3) Emitter Absolute maximum (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage V 400 V CBO Collector-emitter voltage V 400 V CEO Emitter-base voltage V 7 V EBO I 2 A(DC) C Collector current I 4 A(Pulse) * CP 1 W Collector power P C dissipation W(Tc=25?C) 10 Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C * Single pulse Pw=10ms +0.3 - 0.1 1.50.3 0.9 1.5 5.5 9.50.5 2.5 2SC5161 Transistors Electrical char

1.579. 2sc5575.pdf Size:52K _rohm

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2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 ? Absolute maximum ratings (Ta = 25C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collector-base voltage VCBO 250 V 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate Collector-emitter voltage VCEO 120 V (1) (2) (3) ( ) (2) Collector Drain Emitter-base voltage VEBO 12 V ( ) (1) (2) (3) (3) Emitter Source 7 A Collector current IC ROHM : TO-220FN 15 A(t=100ms) 2 W Collector power dissipation PC 25 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 ? +150 C Packaging specifications and hFE Type 2SC5575 Package TO-220FN hFE E Code - Basic ordering unit (pieces) 500 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Coll

1.580. 2sc5868.pdf Size:929K _rohm

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Medium power transistor (60V, 0.5A) 2SC5868 ?Features ?Dimensions (Unit : mm) 1) High speed switching. TSMT3 2.8 (Tf : Typ. : 80ns at IC = 500mA) 1.6 2) Low saturation voltage, typically : (Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base (2) Emitter 0.3 0.6 Each lead has same dimensions (3) Collector ?Applications Abbreviated symbol : VS Small signal low frequency amplifier High speed switching ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SC5868 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 VCEO V Collector-emitter voltage 60 Emitter-base voltage VEBO 6 V DC IC A 0.5 Collector current ?1 Pulsed ICP A 1.0 ?2 Power dissipation PC 500 mW Tj C Junction temperature 150 Tstg -55 to 150 C Range

1.581. 2sc5574.pdf Size:52K _rohm

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2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 ? 3) Pc = 30W (Tc = 25C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3) (1) Base Gate ( ) (2) Collector Drain Absolute maximum ratings (Ta = 25C) ( ) ROHM : TO-220FN (3) Emitter Source Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO V 80 Emitter-base voltage VEBO 6 V 4 A(DC) IC Collector current 6 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 ? +150 C Single pulse, Pw=100ms * Packaging specifications and hFE Type 2SC5574 Package TO-220FN hFE EFG Code - Basic ordering unit (pieces) 500 Electrical characteristics

1.582. 2sc5147.pdf Size:51K _rohm

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2SC5147 Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. 10.0 4.5 (Typ.3pF at VCB = 30V) 3.2 2.8 ? 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of 1.2 1.3 video signals. 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) (1) (2) (3) (3) Emitter(Source) Absolute maximum ratings (Ta=25C) ROHM : TO-220FN Parameter Symbol Limits Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA (DC) 2 W Collector power dissipation PC 10 W (Tc = 25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C Packaging specifications and hFE Type 2SC5147 Package TO-220FN hFE DE Code - Basic ordering unit (pieces) 500 Electrical characteristics (Ta=25C) Paramete

1.583. 2sc5274.pdf Size:20K _rohm

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Transistors 2SC5274 (96-203-C329) 304

1.584. 2sc5826.pdf Size:60K _rohm

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2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max. 3) Strong discharge power for inductive load and 0.5 capacitance load. (1) (2) (3) (1) Emitter 2.54 2.54 4) Complements the 2SA2073 1.05 0.45 (2) Collector Taping specifications (3) Base Symbol : C5826 Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TV2 Basic ordering unit (pieces) 2500 2SC5826 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 Collector-emitter voltage VCEO 60 V VEBO V Emitter-base voltage 6 DC IC A 3 Collector current ? Pulsed ICP 6 A PC W Power dissipation 1.0 Tj C Junction temperature 150 Rang

1.585. 2sc5060.pdf Size:52K _rohm

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2SC5060 Transistors Power transistor (9010V, 3A) 2SC5060 External dimensions (Units : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to L loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter. 0.5 6) Built-in damper diode. (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications Equivalent circuit ROHM : ATV (1) Emitter C (2) Collector (3) Base B R1 R2 B : Base E C : Collector R1 3k? E : Emitter R2 1k? Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 9010 V Collector-emitter voltage VCEO 9010 V Emitter-base voltage VEBO 6 V IC 1 A(DC) Collector current ?1 ICP 2 A(Pulse) ?2 Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C ?1 Single pulse Pw=10ms ?2 Printed circui

1.586. 2sc5526.pdf Size:52K _rohm

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2SC5526 Transistors High-speed Switching Transistor (60V, 12A) 2SC5526 External dimensions (Units: mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 10.0 4.5 2) High switching speed. 2.8 3.2 ? (Typ. tf = 0.1s at Ic = 6A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SA2007. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3) (1) Base Gate ( ) (2) Collector Drain Absolute maximum ratings (Ta = 25C) ( ) ROHM : TO-220FN (3) Emitter Source Parameter Symbol Limits Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V 12 A(DC) Collector current IC 20 A(Pulse) * 2 W PC Collector power dissipation 25 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 ? +150 C Single pulse, Pw=100ms * Packaging specifications and hFE Type 2SC5526 Package TO-220FN hFE EF Code - Basic ordering unit (pieces) 500 Electrical characteri

1.587. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

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High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2SC4726 2SC4083 2SC3838K 2SC5662 2SC4726 1.6 0.7 Package VMT3 EMT3 UMT3 SMT3 0.3 0.55 hFE NP NP NP NP ( ) 3 Marking AD AD 1D AD ( ) ( ) 2 1 0.2 0.2 Code T2L TL T106 T146 0.15 0.5 0.5 Basic ordering unit (1) Emitter 1.0 8000 3000 3000 3000 ROHM : EMT3 (2) Base (pieces) EIAJ : SC-75A (3) Collector 2.0 0.9 2SC4083 0.3 0.2 0.7 (3) ?Absolute maximum ratings (Ta=25?C) (2) (1) Parameter Symbol Limits Unit (1) Emitter 0.65 0.65 (2) Base 0.15 Collector-base voltage VCBO 20 V 1.3 (3) Collector ROHM : UMT3 Collector-emitter voltage VCEO 11 V EIAJ : SC-70 Each lead has

1.588. 2sc5916.pdf Size:48K _rohm

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2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base 4) Complements the 2SA2113 (2) Emitter Each lead has same dimensions 0.3 0.6 (3) Collector Abbreviated symbol : UY Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Code TL Type Basic ordering unit 3000 (pieces) 2SC5916 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current ?1 ICP 4 A ?2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range of storage temperatu

1.589. umc5n_fmc5a_c5_sot23-5_sot353.pdf Size:107K _rohm

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Transistors Power management (dual digital transistors) UMC5N / FMC5A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143X chip and DTC144E chip in a UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN/PNP silicon transistor (Built-in resistor type) FAbsolute maximum ratings (Ta = 25_C) (96-402-A143X/C144E) 523 Transistors UMC5N / FMC5A FElectrical characteristics, DTr1 (Ta = 25_C) FElectrical characteristics, DTr2 (Ta = 25_C) FPackaging specifications 524 Transistors UMC5N / FMC5A FElectrical characteristic curves FDTr1 (NPN) DTr2 (PNP) 525

1.590. 2sc5825.pdf Size:167K _rohm

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Power transistor (60V, 3A) 2SC5825 ?Features ?Dimensions (Unit : mm) 1) High speed switching. CPT3 (Tf : Typ. : 30ns at IC = 3A) (SC-63) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2072. ?Applications (1) Base Low frequency amplifier (2) Collector Each lead has same dimensions High speed switching (3) Emitter Abbreviated symbol : C5825 ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 2500 2SC5825 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 VCEO V Collector-emitter voltage 60 VEBO V Emitter-base voltage 6 Continuous IC 3 A Collector current ?1 Pulsed ICP A 6 ?2 W 1.0 PC Power dissipation ?3 10.0 W Tj C Junction temperature 150 Tstg -55 to 150 C Range

1.591. 2sc5659_2sc4618_2sc4098_2sc2413k.pdf Size:140K _rohm

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High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K ?Features ?Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter ?Absolute maximum ratings (Ta=25?C) (3) Collector Parameter Symbol Limits Unit 2SC4618 Collector-base voltage VCBO 40 V (1) Collector-emitter voltage VCEO 25 V (2) (3) Emitter-base voltage VEBO 5 V 0.8 Collector current IC 50 mA 1.6 Collector 2SC5659, 2SC4618 0.15 power PC W (1) Emitter ROHM : EMT3 dissipation 2SC4098, 2SC2413K 0.2 0.1Min. (2) Base EIAJ : SC-75A (3) Collector Junction temperature Tj 150 ?C Storage temperature Tstg -55 to +150 ?C 2SC4098 1.25 2.1 ?Packaging specifications and hFE 0.1to0.4 Type 2SC5659 2SC4618 2SC4098 2SC2413K ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base Each lead has same dimensions Pack

1.592. 2sc5880.pdf Size:87K _rohm

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2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications (3) Base Applications Symbol : C5880 Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TV2 Basic ordering unit (pieces) 2500 2SC5880 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 Collector-emitter voltage VCEO 60 V VEBO V Emitter-base voltage 6 DC IC A 2 Collector current ? Pulsed ICP 4 A PC W Power dissipation 1.0 tj C Junction temperature 150 Range of storage temperature tstg -55 to 150 C ?Pw=10ms Rev.B 1/3

1.593. 2sc5532.pdf Size:46K _rohm

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2SC5532 Transistors High-voltage Switching Transistor (400V, 5A) 2SC5532 Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A) 2) High switching speed. (tf : Max. 1s at Ic =4A) 3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 5A Collector current ICP 7 A * Collector power dissipation PC 30 W (Tc = 25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C * Single pulse, Pw = 100ms. Packaging specifications and hFE Type 2SC5532 Package TO-220FN hFE AB Code - Basic ordering unit (pieces) 500 Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC = 50A Collector-emitter breakdown voltage BVCEO 400 - - V IC = 1mA Emitter-base breakdown voltage BVEBO 7 - - V IE = 50A Collector cutoff current ICBO -

1.594. 2sc5877s.pdf Size:98K _rohm

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2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically : 0.45 (Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements the 2SA2089S Taping specifications (1) (2) (3) (2) Collector (3) Base Symbol : C5877S Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TP Basic ordering unit (pieces) 5000 2SC5877S Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 60 VCEO V Collector-emitter voltage 60 Emitter-base voltage VEBO 6 V DC IC A 0.5 Collector current ?1 Pulsed ICP A 1.0 PC mW Power dissipation 300 C Junction temper

1.595. 2sc5576.pdf Size:49K _rohm

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2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (6010V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B : Base R1 4.5k? C : Collector R2 300? E : Emitter Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 6010 V Collector-emitter voltage VCEO 6010 V Emitter-base voltage VEBO 6 V 4 A(DC) Collector current IC 6 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse, Pw=100ms * Packaging specifications and hFE Type 2SC5576 Package TO-220FN hFE 2k?20k Code - Basic ordering unit 500 (pieces) Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base

1.596. 2sc5730.pdf Size:50K _rohm

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2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base (2) Emitter 4) Complements the 2SA2048 Each lead has same dimensions (3) Collector 0.3 0.6 Abbreviated symbol : UM Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TL Basic ordering unit 3000 (pieces) 2SC5730 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A Collector current ?1 ICP 2 A ?2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range o

1.597. 2sc5511.pdf Size:51K _rohm

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2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units : mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 ? 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3 0.8 0.75 2.54 2.54 2.6 (1) Base(Gate) (1) (2) (3) (2) Collector(Drain) Absolute maximum ratings (Ta = 25C) (1) (2) (3) (3) Emitter(Source) Parameter Symbol Limits Unit ROHM : TO-220FN Collector-base voltage VCBO 160 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A 2 W Collector power dissipation PC 20 W (Tc = 25C) Junction temperature Tj 150 C Storage temperature Tstg -55~+150 C Packaging specifications and hFE Type 2SC5511 Package TO-220FN hFE DE Code - Basic ordering unit 500 Electrical characteristics (Ta = 25C) Par

1.598. 2sc5658.pdf Size:77K _rohm

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2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S External dimensions (Units : mm) Features 1) Low Cob. 2SC2412K 2SC4081 2SC4617 Cob=2.0pF (Typ.) (1) 2) Complements the 2SA1037AK / (2) (3) 1.25 2SA1576A / 2SA1774H / 1.6 0.8 2.1 2.8 2SA2029 / 2SA933AS. 1.6 0.1Min. 0.1Min. 0.3Min. Each lead has same dimensions Each lead has same dimensions Structure ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter ROHM : SMT3 (1) Emitter Epitaxial planar type EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base EIAJ : SC-59 (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector JEDEC : SOT-346 (3) Collector NPN silicon transistor Abbreviated symbol: B* Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 2SC1740S 40.2 20.2 1.2 0.2 0.8 0.2 (2) (3) (1) 0.45+0.15 -0.05 0.15Max. 2.5+0.4 0.5 0.45+0.15 -0.1 -0.05 5 (1) (2) (3) (1) Base (1) Emitter ROH

1.599. 2sc5585_2sc5663.pdf Size:68K _rohm

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2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585 For muting (1) (2) (3) 0.8 Features 1.6 1) High current. 2) Low VCE(sat). 0.1Min. (1) Emitter ROHM : EMT3 VCE(sat) ? 250mV at IC = 200mA / IB = 10mA (2) Base EIAJ : SC-75A JEDEC : SOT-416 (3) Collector Abbreviated symbol : BX 2SC5663 1.2 0.2 0.8 0.2 (2) (3) (1) 0.15Max. (1) Base (2) Emitter (3) Collector ROHM : VMT3 Abbreviated symbol : BX Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collectot-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V IC 500 mA Collector current ICP 1 A ? Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Single pul

1.600. 2sc5865.pdf Size:931K _rohm

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High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 ?Features ?Dimensions (Unit : mm) 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) TSMT3 1.0MAX 2) Low saturation voltage, typically. 2.9 0.85 : (Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.7 3) Strong discharge power for inductive load and ( ) 3 capacitance load. 4) Low Noise. 5) Complements the 2SA2092. ( ) ( ) 1 2 0.95 0.95 0.16 1.9 (1) Base Each lead has same dimensions (2) Emitter (3) Collector ?Applications Abbreviated symbol : VU High speed switching, Low noise ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code TL Basic ordering unit (pieces) 3000 2SC5865 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 1.0 A Collector current ?1 ICP 2.0 A ?2 Power dissipation PC 500 mW

1.601. umc5n.pdf Size:106K _rohm

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Transistors Power management (dual digital transistors) UMC5N / FMC5A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143X chip and DTC144E chip in a UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN/PNP silicon transistor (Built-in resistor type) FAbsolute maximum ratings (Ta = 25_C) (96-402-A143X/C144E) 523 Transistors UMC5N / FMC5A FElectrical characteristics, DTr1 (Ta = 25_C) FElectrical characteristics, DTr2 (Ta = 25_C) FPackaging specifications 524 Transistors UMC5N / FMC5A FElectrical characteristic curves FDTr1 (NPN) DTr2 (PNP) 525

1.602. 2sc2412k_2sc4081_2sc4617_2sc5658_2sc1740s.pdf Size:171K _rohm

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General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S ?Features ?Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 ?Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN silicon transistor Each lead has same dimensions Each lead has same dimensions ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter ROHM : SMT3 (1) Emitter EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base EIAJ : SC-59 (2) Base JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector JEDEC : SOT-346 (3) Collector Abbreviated symbol: B* Abbreviated symbol: B* Abbreviated symbol: B* 2SC5658 2SC1740S 40.2 20.2 1.2 0.2 0.8 0.2 (2) (3) (1) 0.45+0.15 -0.05 0.15Max. 2.5+0.4 0.5 0.45+0.15 -0.1 -0.05 5 (1) (2) (3) (1) Base (1) Emitter ROHM : VMT3 (2) Emitter ROHM : SPT (2) Collector EI

1.603. 2sc5103.pdf Size:164K _rohm

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High speed switching transistor (60V, 5A) 2SC5103 ?Features ?Dimensions (Unit : mm) 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 ?s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. 0.9 C0.5 0.8Min. (1) Base 1.5 2.5 (2) Collector ?Absolute maximum ratings (Ta=25?C) ROHM : CPT3 9.5 (3) Emitter Parameter Symbol Limits Unit EIAJ : SC-63 Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V 5 A(DC) Collector current IC 10 A(Pulse) ? Collector power 1 W PC dissipation 10 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ?Single pulse Pw=100ms ?Packaging specifications and hFE Type 2SC5103 Package CPT3 hFE Q Code TL Basic ordering unit (pieces) 2500 ?Electrical characteristics (Ta=25?C) Typ. Parameter Symbol Min. Max. Unit Conditions Collector-base breakdown voltage BVCBO 100 - - V IC =

1.604. 2sc5001.pdf Size:66K _rohm

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2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT3 6.5 5.1 IB= 4A / 50mA. 2.3 0.5 2) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications and hFE 0.65 Type 2SC5001 0.9 2.3 (1)Base 2.3 (1) (2) (3) 0.5 Package CPT3 (2)Collector 1.0 (3)Emitter hFE QR Code TL Basic ordering unit (pieces) 2500 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V IC 10 A Collector current ICP 15 A ? Base current IB 2A 1 W Collector power dissipation PC 10 W(Tc=25C) Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ? Single pulse Pw=10ms Electrical characteristics (Ta=25C) Pa

1.605. 2sc5875.pdf Size:98K _rohm

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2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter 4) Complements the 2SA2087 (2) Collector Taping specifications (3) Base Symbol : C5875 Applications Low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TV2 Basic ordering unit (pieces) 2500 2SC5875 Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 30 VCEO V Collector-emitter voltage 30 Emitter-base voltage VEBO 6 V DC IC A 2 Collector current ? Pulsed ICP A 4 PC W Power dissipation 1.0 C Junction temperature Tj 150 Ts

1.606. 2sc5730k.pdf Size:62K _rohm

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2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit : mm) Features 1) High speed switching. SMT3 (Tf : Typ. : 50ns at IC = 1.0A) (SC-59) 2) Low saturation voltage, typically : (Typ. 150mV at IC = 500mA, IB = 50mA) 1.6 3) Strong discharge power for inductive load and 2.8 capacitance load. (1) Emitter 4) Complements the 2SA2048K 0.3Min. (2) Base Each lead has same dimensions (3) Collector Abbreviated symbol : UM Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code T146 Basic ordering unit (pieces) 3000 2SC5730K Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 30 Collector-emitter voltage VCEO 30 V VEBO V Emitter-base voltage 6 DC IC A 1.0 Collector current ?1 Pulsed ICP A 2.0 ?2 PC mW Power dissipation 200

1.607. 2sc5866.pdf Size:929K _rohm

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Medium power transistor (60V, 2A) 2SC5866 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 Each lead has same dimensions (1)Base 0.3 0.6 (2)Emitter Abbreviated symbol : VL (3)Collector ?Applications Low frequency amplifier High speed switching ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code TL Basic ordering unit 3000 (pieces) 2SC5866 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 2 A Collector current ?1 ICP 4 A ?2 Power dissipation PC 500 mW Junction temperature Tj 150 C Range of storage temperature Tstg -55 to +150 C ?1 Pw=10ms

1.608. 2sc5876.pdf Size:928K _rohm

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Medium power transistor (60V, 0.5A) 2SC5876 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 4) Complements the 2SA2088 0.1Min. Each lead has same dimensions (1)Emitter (2)Base Abbreviated symbol : VS (3)Collector ?Applications Small signal low frequency amplifier High speed switching ?Structure NPN Silicon epitaxial planar transistor ?Packaging specifications Package Taping Type Code T106 Basic ordering unit 3000 (pieces) 2SC5876 ?Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V IC 0.5 A Collector current ?1 ICP 1.0 A ?2 Power dissipation PC 200 mW Junction temperature Tj 150 C Range of storage temperature Tstg -55

1.609. 2sc5874s.pdf Size:98K _rohm

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2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically : 0.45 (Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements the 2SA2086S Taping specifications (1) (2) (3) (2) Collector (3) Base Symbol : C5874S Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Package Taping Type Code TP Basic ordering unit (pieces) 5000 2SC5874S Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit VCBO V Collector-base voltage 30 VCEO V Collector-emitter voltage 30 VEBO V Emitter-base voltage 6 DC IC 1.0 A Collector current ?1 Pulsed ICP 2.0 A ?2 PC mW Power dissipation 300 Tj C Jun

1.610. 2sc5659.pdf Size:140K _rohm

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High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K ?Features ?Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter ?Absolute maximum ratings (Ta=25?C) (3) Collector Parameter Symbol Limits Unit 2SC4618 Collector-base voltage VCBO 40 V (1) Collector-emitter voltage VCEO 25 V (2) (3) Emitter-base voltage VEBO 5 V 0.8 Collector current IC 50 mA 1.6 Collector 2SC5659, 2SC4618 0.15 power PC W (1) Emitter ROHM : EMT3 dissipation 2SC4098, 2SC2413K 0.2 0.1Min. (2) Base EIAJ : SC-75A (3) Collector Junction temperature Tj 150 ?C Storage temperature Tstg -55 to +150 ?C 2SC4098 1.25 2.1 ?Packaging specifications and hFE 0.1to0.4 Type 2SC5659 2SC4618 2SC4098 2SC2413K ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base Each lead has same dimensions Pack

1.611. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 UMT3 SMT3 hFE NP NP NP NP 2SC4725 Marking AC? AC? 1C? AC? Code TL T106 T146 T2L Basic ordering unit 8000 3000 3000 3000 (pieces) ? Denotes hFE (1) Emitter (2) Base ROHM : EMT3 EIAJ : SC-75A (3) Collector 2SC4082 ? Absolute maximum ratings (Ta=25?C) Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V (1) Emitter Collector current IC 50 mA (2) Base 2SC5661, 2SC4725 0.15 (3) Collector Collector power PC W ROHM : UMT3 dissipation 2SC4082, 2SC3837K 0.2 EIAJ : SC-70 Each lead has same dimensi

1.612. 2sa1834_2sc5001.pdf Size:50K _rohm

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2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use

1.613. 2sa1964_2sc5248.pdf Size:38K _rohm

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2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

1.614. 2sc5531.pdf Size:51K _rohm

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2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 Features External dimensions (Units : mm) 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) 13.1 (IC / IB =1A / 0.2A) 3.2 2) High breakdown voltage. VCEO=400V 3) Fast switching. 8.8 tf ?1.0s ( ) 1 Base ( ) 2 Collector (IC=0.8A) ( ) 3 Emitter 0.5Min. ROHM : PSD3 EIAJ : SC-83A Structure Three-layer, diffused planar type NPN silicon transistor. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC 2 A(DC) Collector current ICP 4 A(Pulse) * 2 W Collector power dissipation PC 30 W(Tc=25?C) Junction temperature Tj 150 ?C Storage temperature Tstg -55~+150 ?C Single pulse Pw=10ms * Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 400 - - V IC=50A Collector-emitter breakdown voltage BVCE

1.615. 2sa1900_2sc5053.pdf Size:47K _rohm

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2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use

1.616. irfpc50a_sihfpc50a.pdf Size:889K _vishay

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IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configuration Single Effective Coss Specified Lead (Pb)-free Available D TO-247 APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptable Power Supply High Speed Power Switching S D S G TYPICAL SMPS TOPOLOGY N-Channel MOSFET PFC Boost ORDERING INFORMATION Package TO-247 IRFPC50APbF Lead (Pb)-free SiHFPC50A-E3 IRFPC50A SnPb SiHFPC50A ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS 30 TC = 25 C 11 Continuous Drain Current VGS at 10 V ID TC = 100 C 7.0 A Pulsed Drai

1.617. irfpc50lc_sihfpc50lc.pdf Size:597K _vishay

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IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitive Avalanche Rated Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-247AC significantly lower gate charge over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, G faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the S designer a new standard in power transistors for switching D S applications. G The TO-247AC package is pref

1.618. irfpc50_sihfpc50.pdf Size:1457K _vishay

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IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 69 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-247AC package is preferred for commercial-industrial applications where higher power S levels preclude the use of TO-220AB devices. The D G S TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also N-Channel MOSFET provides greater creepage distance between pins to meet the requirements of most safety

1.619. umc5n.pdf Size:283K _diodes

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UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1) (3) (2) 3 2 1 Case Material: Molded Plastic. UL Flammability R1 R2 Q1 Classification Rating 94V-0 R1 = 47k? Moisture Sensitivity: Level 1 per J-STD-020C R2 Q1 R2 = 47k? Terminal Connections: See Diagram Q2 Q2 R1 Terminals: Finish Matte Tin Annealed Over Alloy 42 R1 = 4.7k? 4 5 Leadframe. Solderable per MIL-STD-202, Method 208 R2 = 10k? TOP VIEW (4) (5) Marking Information: See Page 4 Ordering Information: See Page 4 Schematic and Pin Configuration Weight: 0.006 grams (approximate) Maximum Ratings, Total Device @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 150 mW

1.620. bc549b-c_bc550b-c.pdf Size:52K _diodes

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Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit CollectorEmitter Voltage VCEO 30 45 Vdc CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25C PD 625 mW 2 Derate above 25C 5.0 mW/C 3 Total Device Dissipation @ TC = 25C PD 1.5 Watt CASE 2904, STYLE 17 Derate above 25C 12 mW/C TO92 (TO226AA) Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit COLLECTOR 1 Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CEO Vdc (IC = 10 mAdc, IB = 0) BC549B,C 30 BC550B,C 45 CollectorBase Breakdown V

1.621. bsc520n15ns3rev2.2.pdf Size:657K _infineon

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pe % ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,E5AB9?> m D n) m x P ' 381>>5< >?A=1< <5E5< 1 D P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) G? D ON? P .5AH A5B9BC1>35 D n) P S ?@5A1C9>7 C5=@5A1CDA5 P )2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?> P "1 6A55 133?A49>7 C? # Type Package Marking , ' ', ! G? D ON? N1 N ,B48?8 <,>492= 1C S D><5BB ?C85AF9B5 B@5396954 j Parameter Symb?I C?nditi?ns VaIue Unit S ?>C9>D?DB 4A19> 3DAA5>C 1 D C S 14 C S 4 )D 3DAA5>C ) D p l e C E1<1>385 5>5A7H B9>7<5 @D 7 t t C ( @5A1C9>7 1>4 BC?A175 C5=@5A1CDA5 S j t # 3<9=1C93 31C57?AH #' # + 5E @175 % ! !% Parameter Symb?I C?nditi?ns VaIues Unit min. typ. max. &30<8,7 .3,<,.>0<4=>4.= -85A=1< A5B9BC1>35 :D>3C9?> 31B5 ? ? t C -85A=1< A5B9BC1>35 ? ? t 3= 3??<9>7 1A

1.622. ixkp20n60c5m.pdf Size:101K _ixys

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IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability VGS 20 V - Lowest resistance - Avalanche rated for unclamped ID25 TC = 25C 7.6 A inductive switching (UIS) ID90 TC = 90C 5.3 A - Low thermal resistance due to reduced chip thickness EAS single pulse 435 mJ ID = 6.6 A; TC = 25C Enhanced total power density EAR repetitive 0.66 mJ dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns Applications Switched mode power supplies Symbol Conditions Characteristic Values (SMPS) (TVJ = 25C, unless otherwise specified) Uninterruptible power supplies (UPS) Power factor correction (PFC) min. typ. max. Welding RDSon VGS

1.623. ixkc23n60c5.pdf Size:262K _ixys

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IXKC 23N60C5 ID25 = 23 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 ? Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode D ISOPLUS220TM Low RDSon, high VDSS MOSFET Ultra low gate charge G G D ? S isolated back S surface E72873 Preliminary data Features MOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratings substrate VDSS TVJ = 25C 600 V - high power dissipation VGS 20 V - isolated mounting surface - 2500 V electrical isolation ID25 TC = 25C 23 A - low drain to tab capacitance (< 30 pF) ID90 TC = 90C 16 A Fast CoolMOS 1) power MOSFET 4th generation EAS single pulse 800 mJ ID = 11 A; TC = 25C EAR repetitive 1.2 mJ - high blocking capability - lowest resistance dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance Symbol Conditions Characteristic Values due to reduced

1.624. cpc5602.pdf Size:79K _ixys

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CPC5602 N Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage (VDS) 350 V The CPC5602 is an N channel depletion mode Field ? Max On-Resistance (Ron-max)14 Effect Transistor (FET) that utilizes Clares proprietary third generation vertical DMOS process. The third Max Power 2.5 W generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly Features reliable device, particularly in difficult application 350V Drain-to-Source Voltage environments such as telecommunications. Low On-resistance: 8 Ohms (Typical) One of the primary applications for the CPC5602 is High input impedance as a linear regulator/hook switch for the LITELINK Low input and output leakage family of Data Access Arrangements (DAA) Devices Small package size SOT-223 CPC5610A, CPC5611A, CPC5620A, CPC5621A, PC Card (PCMCIA) Compatible and CPC5622A.

1.625. ixkh70n60c5.pdf Size:106K _ixys

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IXKH 70N60C5 ID25 = 70 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.045 ? N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability VGS 20 V - Lowest resistance - Avalanche rated for unclamped ID25 TC = 25C 70 A inductive switching (UIS) ID90 TC = 90C 48 A - Low thermal resistance due to reduced chip thickness EAS single pulse 1950 mJ ID = 11 A; TC = 25C Enhanced total power density EAR repetitive 3 mJ dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns Applications Switched mode power supplies Symbol Conditions Characteristic Values (SMPS) (TVJ = 25C, unless otherwise specified) Uninterruptible power supplies (UPS) Power factor correction (PFC) min. typ. max. Welding RDSon VGS = 10 V; ID = 44 A 40 45 m?

1.626. ixkp13n60c5m.pdf Size:100K _ixys

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IXKP 13N60C5M ID25 = 6.5 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability VGS 20 V - Lowest resistance - Avalanche rated for unclamped ID25 TC = 25C 6.5 A inductive switching (UIS) ID90 TC = 90C 4.5 A - Low thermal resistance due to reduced chip thickness EAS single pulse 290 mJ ID = 4.4 A; TC = 25C Enhanced total power density EAR repetitive 0.44 mJ dV/dt MOSFET dV/dt ruggedness VDS = 0...480 V 50 V/ns Applications Switched mode power supplies Symbol Conditions Characteristic Values (SMPS) (TVJ = 25C, unless otherwise specified) Uninterruptible power supplies (UPS) Power factor correction (PFC) min. typ. max. Welding RDSon VGS

1.627. bc546_bc547_bc548_to-92.pdf Size:295K _mcc

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BC546A/B/C MCC Micro Commercial C omponents TM BC547A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 BC548A/B/C Fax: (818) 701-4939 Features NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Amplifier Transistor Through Hole Package ? 150 C Junction Temperature 625mW Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 TO-92 A E Mechanical Data Case: TO-92, Molded Plastic Polarity:indicated as below B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Value Unit ge BC546 65 Collector-Emitter Volta C VCEO BC547 45 V BC548 30 Collector-Base Voltage BC546 80 VCBO BC547 50 V BC548 30 D VEBO Emitter-Base Voltage 6.0 V Collector Current(DC) IC 100 mA mW 1-Collector Pd 625 Power Dissipation@TA=25oC 2-Base 5.0 1 mW/oC 2 3-Emitter 3 W G Pd 1.5 Power Dissipation@TC=25oC 12 mW/oC

1.628. umc2nt1g_umc3nt1g_umc5nt1g.pdf Size:158K _onsemi

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UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 R2 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are Q2 R2 designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by Q1 R1 integrating them into a single device. In the UMC2NT1G series, two complementary BRT devices are housed in the SOT-353 package 45 which is ideal for low power surface mount applications where board space is at a premium. Features MARKING Simplifies Circuit Design DIAGRAM Reduces Board Space Reduces Component Count 5 4 Available in 8 mm, 7 inch/3000 Unit Tape and Reel SC-88A/SOT-353 Ux M G Thes

1.629. emc2dxv5t1_emc3dxv5t1_emc4dxv5t1_emc5dxv5t1.pdf Size:137K _onsemi

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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http://onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by 5 integrating them into a single device. In the EMC2DXV5T1 series, two complementary BRT devices are housed in the SOT-553 package 1 which is ideal for low power surface mount applications where board SOT-553 space is at a premium. CASE 463B Features Simplifies Circuit Design MARKING DIAGRAM Reduces Board Space Reduces Component Count Ux M G These are Pb-Free Devices G MAXIMUM RATINGS

1.630. bc546b_bc547a-b-c_bc548b-c.pdf Size:72K _onsemi

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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 TO-92 Emitter - Base Voltage VEBO 6.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C PD 625 mW 1 1 Derate above 25C 5.0 mW/C 2 2 3 3 Total Device Dissipation @ TC = 25C PD 1.5 W STRAIGHT LEAD BENT LEAD Derate above 25C 12 mW/C BULK PACK TAPE & REEL AMMO PACK Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC Stresses exceeding Maximum Ratings may damage the device. Ma

1.631. nthc5513.pdf Size:80K _onsemi

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NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair V(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to 60 mW @ 4.5 V N-Channel Larger Packages 3.9 A 20 V 80 mW @ 2.5 V Low RDS(on) in a ChipFET Package for High Efficiency Performance P-Channel 130 mW @ -4.5 V Low Profile (< 1.10 mm) Allows Placement in Extremely Thin -3.0 A -20 V 200 mW @ -2.5 V Environments Such as Portable Electronics Pb-Free Package is Available S2 D1 Applications Load Switch Applications Requiring Level Shift DC-DC Conversion Circuits Drive Small Brushless DC Motors G2 G1 Designed for Power Management Applications in Portable, Battery Powered Products D2 S1 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) N-Channel MOSFET P-Channel MOS

1.632. bc559.pdf Size:125K _onsemi

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BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit http://onsemi.com Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current Continuous IC -100 mAdc Total Device Dissipation @ PD mW 1 TA = 25C 625 2 3 Derate above 25C 5.0 mW/C Total Device Dissipation @ PD Watt CASE 29-04, STYLE 17 TC = 25C 1.5 TO-92 (TO-226AA) Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range COLLECTOR THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Thermal Resistance, Junction to RqJA 200 C/W BASE Ambient Thermal Resistance, Junction to RqJC 83.3 C/W 3 Case EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CEO Vdc (IC = -10 mAdc, IB = 0) BC559 -30 BC560 -45 Collector-Ba

1.633. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

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BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29 STYLE 17 Collector Current - Continuous IC -100 mAdc Collector Current - Peak ICM -200 1 1 2 2 Base Current - Peak IBM -200 mAdc 3 3 STRAIGHT LEAD BENT LEAD Total Device Dissipation @ TA = 25C PD 625 mW BULK PACK TAPE & REEL Derate above 25C 5.0 mW/C AMMO PACK Total Device Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C MARKING DIAGRAM Operating and Storage Junction TJ, Tstg -55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit BC 55xx Thermal Resistance, Junction-to-Ambient RqJA 200 C/W AYWW G Thermal Resistance, Junct

1.634. 2sc5658m3.pdf Size:125K _onsemi

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2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http://onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTORS High hFE, 210-460 (typical) SURFACE MOUNT Low VCE(sat), < 0.5 V ESD Performance: Human Body Model; u 2000 V, COLLECTOR Machine Model; u 200 V 3 Available in 8 mm, 7-inch/3000 Unit Tape and Reel These are Pb-Free Devices MAXIMUM RATINGS (TA = 25C) 1 2 Rating Symbol Value Unit BASE EMITTER Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc MARKING Emitter-Base Voltage V(BR)EBO 5.0 Vdc DIAGRAM Collector Current - Continuous IC 100 mAdc 3 THERMAL CHARACTERISTICS XXM SOT-723 CASE 631AA Rating Symbol Max Unit 2 1 Power Dissipation (Note

1.635. 2sc5244.pdf Size:36K _panasonic

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Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (TC=25?C) 1.0 0.2 Parameter Symbol Ratings Unit 0.6 0.2 Collector to 2SC5244 1500 5.45 0.3 VCBO V 10.9 0.5 base voltage 2SC5244A 1600 Collector to 2SC5244 1500 VCES V 1:Base emitter voltage 2SC5244A 1600 2:Collector 1 2 3 3:Emitter Emitter to base voltage VEBO 6 V TOP3L Package Peak collector current ICP 20 A Collector current IC 30 A Collector power TC=25 C 200 PC W dissipation Ta=25 C 3.5 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC5244 VCB = 1500V

1.636. 2sc5406.pdf Size:37K _panasonic

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Parameter Symbol Ratings Unit 5.45 0.3 5.45 0.3 Collector to base voltage VCBO 1500 V VCES 1500 V 5 Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V 1 2 3 1:Base Peak collector current ICP 20 A 2:Collector 3:Emitter Collector current IC 14 A TOP3E Full Pack Package Base current IB 8 A Collector power TC=25 C 100 PC W dissipation Ta=25 C 3 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff 2SC5406 VCB = 1000V, IE = 0 50 A

1.637. 2sc5896.pdf Size:61K _panasonic

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Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forward current transfer ratio hFE linearity 0.80.1 0.550.15 TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 2.540.30 5.080.50 Absolute Maximum Ratings TC = 25C 1 2 3 1: Base Parameter Symbol Rating Unit 2: Collector 3: Emitter Collector-base voltage (Emitter open) VCBO 60 V TO-220D-A1 Package Collector-emitter voltage (Base open) VCEO 60 V Marking Symbol: C5896 Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Internal Connection Peak collector current ICP 5 A C TC = 25C PC 15 W Collector power dissipation Ta = 25C2

1.638. 2sc5121.pdf Size:38K _panasonic

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Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm +0.5 8.0 0.1 3.2 0.2 Features High collector to base voltage VCBO ? 3.16 0.1 High collector to emitter VCEO Small collector output capacitance Cob TO-126 package, which is fitted to a heat sink without any insu- lation parts Absolute Maximum Ratings (TC=25?C) 0.5 0.1 Parameter Symbol Ratings Unit 0.75 0.1 0.5 0.1 1.76 0.1 Collector to base voltage VCBO 400 V 4.6 0.2 2.3 0.2 Collector to emitter voltage VCEO 400 V 1:Emitter Emitter to base voltage VEBO 7 V 2:Collector 1 2 3 3:Base Peak collector current ICP 100 mA JEDEC:TO126(b) Collector current IC 70 mA Collector power dissipation PC 1.2 W Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 300V, IE = 0 10 A Collector cutoff current Hot ICEO VCE = 380V, IB = 0, Ta = 80 C 10

1.639. 2sc5405.pdf Size:37K _panasonic

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Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm Features 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching High forward current transfer ratio hFE which has satisfactory ? 3.2 0.1 linearity Dielectric breakdown voltage of the package: > 5kV 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25?C) 1.6 0.2 Parameter Symbol Ratings Unit 0.8 0.1 0.55 0.15 Collector to base voltage VCBO 80 V 2.54 0.3 Collector to emitter voltage VCEO 50 V 1 2 3 5.08 0.5 Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A 1:Base Collector current IC 3 A 2:Collector 3:Emitter Base current IB 1 A TO220D Full Pack Package Collector power TC=25 C 20 PC W dissipation Ta=25 C 2.0 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 80V, IE = 0 100 A Collector cuto

1.640. 2sc5725.pdf Size:57K _panasonic

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Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25C 10? Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 20 V 1: Base Collector-emitter voltage (Base open) VCEO 15 V 2: Emitter Emitter-base voltage (Collector open) VEBO 5 V 3: Collector EIAJ: SC-59 Collector current IC 2 A Mini3-G1 Package Peak collector current ICP 6 A Marking Symbol: 3C Collector power dissipation * PC 600 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note) Measure on the ceramic substrate at 15 mm ? 15 mm ? 0.6 mm *: Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-bas

1.641. 2sc5457.pdf Size:37K _panasonic

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Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit: mm 6.5 0.1 2.3 0.1 5.3 0.1 For high breakdown voltage high-speed switching 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 High-speed switching 0.5 0.1 0.75 0.1 High collector to base voltage VCBO 2.3 0.1 4.6 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 1:Base 2:Collector 3:Emitter 1 2 3 Absolute Maximum Ratings (TC=25?C) U Type Package Unit: mm Parameter Symbol Ratings Unit 6.5 0.2 5.35 Collector to base voltage VCBO 500 V 4.35 VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V 0.75 Peak collector current ICP 6 A 2.3 2.3 Collector current IC 3 A 0.6 Base current IB 1.2 A 0.5 0.1 Collector power TC=25 C 30 PC W 1:Base dissipation Ta=25 C 1.0 2:Collector 1 2 3 3:Emitter Junction temperature Tj 150 ?C EIAJ:SC63 U Type Package (Z) Storage temperature Tstg 5

1.642. 2sc5845.pdf Size:81K _panasonic

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Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- 1 2 ing (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25C 10? Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V 1: Base 2: Emitter Emitter-base voltage (Collector open) VEBO 7 V 3: Collector EIAJ: SC-59 Collector current IC 100 mA Mini3-G1 Package Peak collector current ICP 200 mA Marking Symbol: 7M Collector power dissipation PC 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 ?,

1.643. 2sc5473_e.pdf Size:38K _panasonic

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Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter Symbol Ratings Unit 1:Emitter Collector to base voltage VCBO 9 V 2:Collector Collector to emitter voltage VCEO 6 V 3:Emitter EIAJ:SC82 4:Base S-Mini Type Package Emitter to base voltage VEBO 1 V Collector current IC 30 mA Marking symbol : 3A Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 9

1.644. 2sc5379.pdf Size:40K _panasonic

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Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V 1:Base Emitter to base voltage VEBO 2 V 2:Emitter EIAJ:SC75 3:Collector SSMini Type Package Collector current IC 80 mA Collector power dissipation PC 125 mW Marking symbol : HT Junction temperature Tj 125 ?C Storage temperature Tstg 55 ~ +125 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio hFE* VCE = 5V, IC = 10m

1.645. 2sc5036.pdf Size:60K _panasonic

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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absolute Maximum Ratings (TC=25?C) 0.75 0.1 Parameter Symbol Ratings Unit 2.54 0.2 Collector to 2SC5036 900 5.08 0.4 VCBO V base voltage 2SC5036A 1000 1 2 3 7 Collector to 2SC5036 900 VCES V 1:Base emitter voltage 2SC5036A 1000 2:Collector Collector to emitter voltage VCEO 800 V 3:Emitter TO220E Full Pack Package Emitter to base voltage VEBO 7 V Peak collector current ICP 2 A Collector current IC 1 A Base current IB 0.3 A Collector power TC=25 C 30 PC W dissipation Ta=25 C

1.646. 2sc5632.pdf Size:49K _panasonic

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Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings Ta = 25C 10? Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 15 V 1: Base Collector-emitter voltage (Base open) VCEO 8 V 2: Emitter Emitter-base voltage (Collector open) VEBO 3 V 3: Collector EIAJ: SC-70 Collector current IC 50 mA SMini3-G1 Package Collector power dissipation PC 150 mW Marking Symbol: 2R Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 A, IE = 015 V Emitter-base cutoff current (Collector open) IEBO V

1.647. 2sc5104.pdf Size:62K _panasonic

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Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08 0.5 N type package enabling direct soldering of the radiating fin to 1:Base 1 2 3 2:Collector the printed circuit board, etc. of small electronic equipment. 3:Emitter N Type Package Unit: mm Absolute Maximum Ratings (TC=25?C) 8.5 0.2 3.4 0.3 6.0 0.3 1.0 0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V R0.5 0.8 0.1 R0.5 Peak collector current ICP 6 A 0 to 0.4 2.54 0.3 1.1 max. Collector current IC 3 A 5.08 0.5 Base current IB 1.2 A 1:Base 1 2 3 2:Collector Collector powe

1.648. 2sc5838.pdf Size:79K _panasonic

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Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm ? 1.0 mm (height 0.39 mm) 0.39+0.01 1.000.05 -0.03 0.250.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 3 2 0.650.01 0.050.03 Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V 1: Base Emitter-base voltage (Collector open) VEBO 2 V 2: Emitter 3: Collector Collector current IC 80 mA ML3-N2 Package Collector power dissipation PC 100 mW Junction temperature Tj 125 C Marking symbol: 1F Storage temperature Tstg -55 to +125 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 A, IE = 015V Collector-emitter voltage (Base open) VCEO IC = 100 A, IB = 010 V Colle

1.649. 2sc5788.pdf Size:73K _panasonic

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Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 C 1.0 High-speed switching (tstg: storage time/tf: fall time is short) 1.480.2 2.250.2 Low collector to emitter saturation voltage VCE(sat) 0.650.1 Superior forward current transfer ratio hFE linearity 0.650.1 0.350.1 Allowing automatic insertion with radial taping 1.050.1 0.550.1 0.550.1 2.50.2 2.50.2 Absolute Maximum Ratings TC = 25C 1 2 3 Parameter Symbol Rating Unit 1: Base 2: Collector Collector-base voltage (Emitter open) VCBO 60 V 3: Emitter Collector-emitter voltage (Base open) VCEO 60 V MT-4-A1 Package Emitter-base voltage (Collector open) VEBO 6 V Marking Symbol: C5788 Collector current IC 3 A Peak collector current ICP 6 A Internal Connection TC = 25C PC 15 W Collector power C dissipation Ta =

1.650. 2sc5946.pdf Size:159K _panasonic

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?????? 2SC5946 ????NPN???????????? ???????????? Unit : mm 0.33+0.05 0.10+0.05 0.02 0.02 3 ??? ??????????fT ??? SSS ??????????????????????? ???????????? 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.800.05 ?????? Ta = 25C 1.200.05 5? ?? ?? ?? ?? ???????????(E ???) VCBO 30 V ???? ???????(B???) VCEO 20 V ? ???????????(C ???) VEBO 3 V ?????? IC 50 mA 1 : Base 2 : Emitter ?????? PC 100 mW 3 : Collector ???? Tj 125 C SSSMini3-F1 Package ???? Tstg -55 ? +125 C ?????? : 9N ????? Ta = 25C 3C ?? ?? ?? ?? ?? ?? ?? ???????????(E ???) VCBO IC = 100 A, IE = 030 V ???????????(C ???) VEBO IE = 10 A, IC = 03V ??????????? VBE VCB = 10 V, IE = -2 mA 720 mV ??????? hFE VCB = 10 V, IE = -2 mA 25 250 ? ?????????? * fT VCB = 10 V, IE = -15 mA, f = 200 MHz 800 1 600 MHz ????(?????)Crb VCE = 6 V, IC = 0, f = 1 MHz 0.8 pF ????(??????)Cre VCB = 10 V, IE = -1 mA, f = 10.7 MHz 1.0 1.5 pF ???? PG VCB = 10 V, IE = -1 mA, f = 200 MHz 20 dB ? ) 1. ?????, ?????? JIS

1.651. 2sc5572.pdf Size:71K _panasonic

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1.652. 2sc5474_e.pdf Size:37K _panasonic

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Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. 0.2 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 1:Base Collector to emitter voltage VCEO 6 V 2:Emitter EIAJ:SC75 Emitter to base voltage VEBO 1 V 3:Collector SS-Mini Type Package Collector current IC 30 mA Marking symbol : 3A Collector power dissipation PC 125 mW Junction temperature Tj 125 ?C Storage temperature Tstg 55 ~ +125 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 9V, IE = 0 1 A Emitter cutoff

1.653. 2sc5517.pdf Size:35K _panasonic

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Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Parameter Symbol Ratings Unit 5.45 0.3 5.45 0.3 Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V 5 Emitter to base voltage VEBO 5 V Peak collector current ICP 12 A 1 2 3 1:Base Collector current IC 6 A 2:Collector 3:Emitter Base current IB 3 A TOP3E Full Pack Package Collector power TC=25 C 40 PC W dissipation Ta=25 C 3 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit VCB = 1000V, IE = 0 50 A Collector cutoff current ICBO VCB = 1700V, IE =

1.654. 2sc5383.pdf Size:46K _panasonic

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Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C 0.60.2 Parameter Symbol Rating Unit 5.450.3 10.90.5 Collector to base voltage VCBO 1 500 V Collector to emitter voltage VCES 1 500 V 1: Base 1 2 3 VCEO 600 V 2: Collector 3: Emitter Emitter to base voltage VEBO 7V TOP-3L Package Peak collector current ICP 30 A Marking Symbol: C5583 Collector current IC 17 A Base current IB 8 A Internal Connection TC = 25C PC 150 W Collector power C dissipation Ta = 25C3 Junction temperature Tj 150 C B Storage temperature Tstg -55 to +150 C E Electrical Characteristics TC = 25C 3C Parameter Symbol Conditions Min Typ Max Un

1.655. 2sc5018_e.pdf Size:41K _panasonic

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Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP 1.5 A the upper figure, the 3:Base Collector current IC 0.8 A type as shown in MT2 Type Package the lower figure is Collector power dissipation PC* 1 W also available. Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C * Printed circuit board: Copper foil area of 1cm2 or more, and the board 1.2 0.1 thickness of 1.7mm for the collector portion 0.65 max. 0.45+0.1 0.05 (HW

1.656. 2sc5580.pdf Size:43K _panasonic

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Transistors 2SC5580 Silicon NPN epitaxial planer type Unit: mm For high-frequency oscillation / switching 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.65) (0.65) packing. 1.30.1 2.00.2 10 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8V 1: Base Emitter to base voltage VEBO 3V 2: Emitter EIAJ: SC-70 3: Collector S-Mini Type Package Collector current IC 50 mA Collector power dissipation PC 150 mW Marking Symbol: 3R Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit Emitter cutoff current IEBO VEB = 2 V, IC = 02 A Collector to base voltage VCBO IC = 100 A, IE = 015 V Forward current transfer ratio

1.657. 2sc5190.pdf Size:37K _panasonic

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Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V 0.2 0.1 Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V 1:Base 2:Emitter EIAJ:SC70 Collector current IC 30 mA 3:Collector SMini Type Package Collector power dissipation PC 150 mW Junction temperature Tj 150 ?C Marking symbol : 3Y Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 5V, IE = 0 1 A Emitter cutoff current IEBO VEB = 1V, IC = 0 1 A Forward current transfer ratio

1.658. 2sc5419_e.pdf Size:44K _panasonic

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Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Note: In addition to the 1:Emitter lead type shown in 2:Collector Peak collector current ICP 100 mA the upper figure, the 3:Base Collector current IC 70 mA type as shown in MT2 Type Package the lower figure is Collector power dissipation PC*1 1.0 W also available. Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board 1.2 0.1 thickness of 1.7mm for the collector porti

1.659. 2sc5779.pdf Size:78K _panasonic

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Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs ? 3.20.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forward current transfer ratio hFE linearity 0.80.1 0.550.15 TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 2.540.30 5.080.50 Absolute Maximum Ratings TC = 25C 1 2 3 1: Base Parameter Symbol Rating Unit 2: Collector 3: Emitter Collector-base voltage (Emitter open) VCBO 50 V TO-220D-A1 Package Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 10 A C Peak collector current ICP 20 A B Collector power dissipation PC 25 W Ta = 25C 2.0 E Junction temperature T

1.660. 2sc5423.pdf Size:30K _panasonic

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Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Parameter Symbol Ratings Unit 5.45 0.3 5.45 0.3 Collector to base voltage VCBO 1700 V VCES 1700 V 5 Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 5 V 1 2 3 1:Base Peak collector current ICP 30 A 2:Collector 3:Emitter Collector current IC 15 A TOP3E Full Pack Package Base current IB 10 A Collector power TC=25 C 100 PC W dissipation Ta=25 C 3.5 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit VCB = 1000V, IE = 0 50 A Collector cutoff current ICBO

1.661. 2sc5378.pdf Size:31K _panasonic

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Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V 1:Base Emitter to base voltage VEBO 2 V 2:Emitter EIAJ:SC70 3:Collector SMini Type Packa