C5 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

L CHARACTERISTICS Current�Gain � Bandwidth Product fT MHz (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 � BC547 150 300 � BC548 150 300 � Output Capacitance Cobo � 1.7 4.5 pF (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance Cibo � 10 � pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small�Signal Current Gain hfe � (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546 125 � 500 BC547/548 125 � 900 BC547A/548A 125 220 260 BC546B/547B/548B 240 330 500 BC547C/548C 450 600 900 Noise Figure NF

1.2. bc559_bc560.pdf Size:107K _motorola

CB = �10 Vdc, IE = 0, f = 1.0 MHz) Small�Signal Current Gain hfe � (IC = �2.0 mAdc, VCE = �5.0 V, f = 1.0 kHz) BC559B 240 330 500 BC559C/BC560C 450 600 900 Noise Figure dB (IC = �200 �Adc, VCE = �5.0 Vdc, RS = 2.0 k?, f = 1.0 kHz) NF1 � 0.5 2.0 (IC = �200 �Adc, VCE = �5.0 Vdc, RS = 100 k?, f = 1.0 kHz, ?f = 200 kHz) NF2 � � 10 NOTES: 1. IB is value for which IC = �11 mA at VCE = �1.0 V. 2. Pulse test = 300 �s � Duty cycle = 2%. 2 Motorola Small�Signal Transistors, FETs and Diodes Devi

1.3. bc556_bc557_bc558.pdf Size:159K _motorola

E = �5.0 Vdc) �0.55 �0.62 �0.7 (IC = �10 mAdc, VCE = �5.0 Vdc) � �0.7 �0.82 SMALL�SIGNAL CHARACTERISTICS Current�Gain � Bandwidth Product fT MHz (IC = �10 mA, VCE = �5.0 V, f = 100 MHz) BC556 � 280 � BC557 � 320 � BC558 � 360 � Output Capacitance Cob � 3.0 6.0 pF (VCB = �10 V, IC = 0, f = 1.0 MHz) Noise Figure NF dB (IC = �0.2 mAdc, VCE = �5.0 V, BC556 � 2.0 10 RS = 2.0 kW, f = 1.0 kHz, ?f = 200 Hz) BC557 � 2.0 10 BC558 � 2.0 10 Small�Signal Current Gain hfe � (IC = �2.0 mAdc, VCE

1.4. bc556_bc557_bc558_2.pdf Size:220K _motorola

1.5. bc549_bc550.pdf Size:110K _motorola

Gain hfe � (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B 240 330 500 BC549C/BC550C 450 600 900 Noise Figure dB (IC = 200 �Adc, VCE = 5.0 Vdc, RS = 2.0 k?, f = 1.0 kHz) NF1 � 0.6 2.5 (IC = 200 �Adc, VCE = 5.0 Vdc, RS = 100 k?, f = 1.0 kHz) NF2 � � 10 NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 �s � Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small�Signal Transistors, FETs and Diodes Device Dat

1.6. bc517rev.pdf Size:206K _motorola

z) f, FREQUENCY (Hz) Figure 2. Noise Voltage Figure 3. Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 10 70 IC = 10 �A 10 �A 8.0 50 100 �A 6.0 100 �A 30 4.0 IC = 1.0 mA 20 1.0 mA 2.0 10 0 1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100 0 0 RS, SOURCE RESISTANCE (k?) RS, SOURCE RESISTANCE (k?) Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure Motorola Small�Signal Transistors, FETs an

1.7. bc516.pdf Size:44K _philips

rough hole) package; 3 leads SOT54 c E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) 5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5 mm 2.54 1.27 2.5 5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES EUROPEAN OUTLINE ISSUE DATE PROJECTION VERSION IEC JEDEC EIAJ SOT54 TO-92 SC-43 97-02-28

1.8. jc501_3.pdf Size:48K _philips

tion NPN general purpose transistor JC501 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) 5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5 mm 2.54 1.27 2.5 5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES EURO

1.9. jc546_jc547_jc548_3.pdf Size:51K _philips

te 2 - - 770 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz - 2.5 - pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz - 11.5 - pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 - - MHz F noise figure IC = 200 �A; VCE =5V; RS =2k?; - 2 10 dB f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 27 3 Philips Semiconductors Product spec

1.10. bfc505_2.pdf Size:65K _philips

K/W to soldering point; note 1 double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 3 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 CHARACTERISTICS Tj =25�C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V(BR)CBO collector-base breakdown voltage IC = 2.5 �A; IE =0 20

1.11. bc516_3.pdf Size:49K _philips

1.12. bfc520_3.pdf Size:83K _philips

ouble loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1997 Sep 10 3 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 CHARACTERISTICS Tj =25�C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor V(BR)CBO collector-base breakdown voltage IC = 2.5 �A; IE =0 20 - - V V(BR)CEO collector-emitter b

1.13. bc517.pdf Size:43K _philips

b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) 5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5 mm 2.54 1.27 2.5 5.0 0.40 0.56 0.40 4.4 1.4 3.6 12.7 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. REFERENCES EUROPEAN OUTLINE ISSUE DATE PROJECTION VERSION IEC JEDEC EIAJ SOT54 TO-92 SC-43 97-02-28 1999 Apr 23 4 Philips Semiconductors Produc

1.14. bc517_4.pdf Size:49K _philips

1.15. bc546_bc547_3.pdf Size:53K _philips

; VCE =5V - - 770 mV Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz - 1.5 - pF Ce emitter capacitance IC =ic = 0; VEB = 0.5 V; f = 1 MHz - 11 - pF fT transition frequency IC = 10mA; VCE = 5 V; f = 100 MHz 100 - - MHz F noise figure IC = 200 �A; VCE =5V; - 2 10 dB RS =2k?; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 15 3 Philips Semiconductors Product sp

1.16. bc556_bc557.pdf Size:246K _philips

= -10 mA; note 2 - - -820 mV Cc collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 3 - pF Ce emitter capacitance VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz - 10 - pF fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz 100 - - MHz F noise figure VCE = -5 V; IC = -200 ?A; RS = 2 k?; - 2 10 dB f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. 2004 Oct 11 3 NXP Sem

1.17. bc546_bc547.pdf Size:38K _philips

e -65 +150 �C Fnoi se figur eIC =200 A; VCE=5 V; - 2 10 dB RS =2k ; f =1kHz ; B=200Hz Tj j unct i on t emperat ure - 150 �C Tamb operat i ng ambi ent t emperat ure -65 +150 �C N?t es 1. VBEsat decr eases by about 1. 7mV/ K wi t h i ncr easi ng t emper at ur e. N?t e 2. VBE decr eases by about 2mV/ K wi t h i ncr easi ng t emper at ur e. 1. Transi st or mount ed on an FR4 pri nt ed- ci rcui t board. 1999Apr 152 1999Apr 153

1.18. bc847_bc547_ser.pdf Size:97K _philips

d. Product data sheet Rev. 07 � 10 December 2008 3 of 15 BC847/BC547 series NXP Semiconductors 45 V, 100 mA NPN general-purpose transistors Table 4. Ordering information �continued Type number[1] Package Name Description Version BC847T SC-75 plastic surface-mounted package; 3 leads SOT416 BC847AT BC847AT/DG BC847BT BC847CT BC847AM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 ? 0.6 ? 0.5 mm BC847BM BC847CM BC547[2] SC-43A plastic single-ended lead

1.19. jc556_jc557_jc558_3.pdf Size:49K _philips

uency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz F noise figure IC = -200 �A; VCE = -5 V; RS =2k?; - - 10 dB f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. 1999 Apr 27 3 Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 MBH727 400 handbook, full pagewidth hFE VCE = -5 V 300 200 100 0 -10-2 -10-1 -1 -10 -102 IC (mA)

1.20. bc559_4.pdf Size:49K _philips

otes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. 1999 May 28 3 Philips Semiconductors Product specification PNP general purpose transistor BC559 MBH728 600 handbook, full pagewidth hFE 500 VCE = -5 V 400 300 200 100 0 -10-2 -10-1 -1 -10 -102 IC (mA) -103 BC559C. Fig.2 DC current gain; typical values. 1999 May 28 4 Philips Semiconductors Product specification PNP general purpose transist

1.21. bc549_bc550.pdf Size:231K _philips

capacitance VCB = 10 V; IE = ie = 0 A; - 1.5 - pF f = 1 MHz Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A; - 11 - pF f = 1 MHz fT transition frequency VCE = 5 V; IC = 10 mA; 100 - - MHz f = 100 MHz F noise figure VCE = 5 V; IC = 200 ?A; - - 4 dB RS = 2 k?; f = 10 Hz to 15.7 kHz VCE = 5 V; IC = 200 ?A; - - 4 dB RS = 2 k?; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 200

1.22. bc846_bc546_ser.pdf Size:373K _philips

BC846W 1D* BC546A C546A BC846AW 1A* BC546B C546B BC846BW 1B* - - [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China BC846_BC546_SER_7 � NXP B.V. 2009. All rights reserved. Product data sheet Rev. 07 � 17 November 2009 3 of 14 BC846/BC546 series NXP Semiconductors 65 V, 100 mA NPN general-purpose transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter

1.23. bc556_bc557_3.pdf Size:53K _philips

transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz F noise figure IC = -200 �A; VCE = -5 V; RS =2k?; - 2 10 dB f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. 1999 Apr 15 3 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 MBH726 300 handbook, full pagewidth hFE 200 VCE = -5 V 100 0 -10-1 -1 -10 -102 -103 IC

1.24. jc549_jc550_cnv_2.pdf Size:53K _philips

-off current IC = 0; VEB =5V - - 100 nA hFE DC current gain IC =10 �A; VCE =5V; see Figs 2 and 3 JC549B; JC550B - 150 - JC549C; JC550C - 270 - hFE DC current gain IC = 2 mA; VCE =5V; see Figs 2 and 3 JC549; JC550 200 - 800 JC549B; JC550B 200 290 450 JC549C; JC550C 420 520 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 90 250 mV IC = 100 mA; IB =5mA - 200 600 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; note 1 - 700 - mV IC = 100 mA; I

1.25. bc549_bc550_3.pdf Size:49K _philips

ansition frequency IC = 10 mA; VCE =5V; 100 - - MHz f = 100 MHz F noise figure IC = 200 �A; VCE =5V; - - 4 dB RS =2k?; f = 10 Hz to 15.7 kHz IC = 200 �A; VCE =5V; - - 4 dB RS =2k?; f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1999 Apr 22 3 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 MBH725 600 handbook, full pagewidth VCE =

1.26. jc559_3.pdf Size:49K _philips

requency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz F noise figure IC = -200 �A; VCE = -5 V; RS =2k?; - - 4 dB f = 10 Hz to 15.7 kHz IC = -200 �A; VCE = -5 V; RS =2k?; - - 4 dB f = 1 kHz; B = 200 Hz Notes 1. VBEsat decreases by about -1.7 mV/K with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. 1999 Apr 27 3 Philips Semiconductors Product specification PNP general purpose transistor JC559 MBH727 400 handbook, full pagewidth hFE VCE =

1.27. bc549.pdf Size:44K _philips

1.28. ppc5001t_2.pdf Size:58K _philips2

er cut-off current VEB = 1.5 V; IC =0 - - 200 nA V(BR)CBO collector-base breakdown voltage IC = 500 �A; IE =0 40 - - V V(BR)CER collector-emitter breakdown voltage IC = 2.5 mA; RBE =70 ? 35 - - V Ccb collector-base capacitance VCB = 18 V; VEB = 1.5 V; - 1.4 - pF IE =IC = 0; f = 1 MHz Cce collector-emitter capacitance VCE = 18 V; VEB = 1.5 V; - 0.9 - pF IE =IC = 0; f = 1 MHz Ceb emitter-base capacitance VCB = 10 V; VEB =1V; - 5.5 - pF IC =IE = 0; f = 1 MHz 1997 Mar 03 4 Philips Semicon

1.29. 2stc5948.pdf Size:151K _st

ve a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data 2STC5948 TO-3P Mechanical data mm. DIM. MIN. TYP MAX. A4.6 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b0.8

1.30. bc557b.pdf Size:70K _st

3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree 3/5 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) BC557B TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A1 4.80 0.189 T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091 d 0.48 0.019 P0 12.50 12.70

1.31. std2nc50.pdf Size:442K _st

est Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 2S ID = 1.4A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 260 pF Coss Output Capacitance 45 pF Crss Reverse Transfer 5pF Capacitance 2/10 STD2NC50 / STD2NC50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) VDD = 250V, ID = 1.4 A 10 ns Turn-on Delay Time 10 ns tr Rise Time RG = 4.7? VGS = 10V (see test circuit, F

1.32. stp8nc50-fp--1.pdf Size:352K _st

�A IGSS Gate-body Leakage VGS = �30V �100 nA Current (VDS = 0) ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250�A 2 3 4 V VGS = 10V, ID = 4 A 0.7 0.85 ? RDS(on) Static Drain-source On Resistance VDS > ID(on) x RDS(on)max, ID(on) On State Drain Current 8A VGS =10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit VDS > ID(on) x RDS(on)max, gfs (1) Forward Transconductance 7.5 S ID =4A Ciss Input Capacitan

1.33. stp4nc50(fp).pdf Size:324K _st

Current (VDS = 0) ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250�A 2 3 4 V RDS(on) Static Drain-source On VGS = 10V, ID = 1.5 A 2.2 2.7 ? Resistance ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, 3.5 A VGS =10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 2.7 S ID = 1.5 A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 315 pF Coss

1.34. 2stc5949.pdf Size:148K _st

have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 5/8 Package mechanical data 2STC5949 TO-264 Mechanical data mm. Dim. Min. Typ Max. A4.805.20 A1 2.50 3.10 b 0.90 1.0 1.25 b1 2

1.35. stc5dnf30v.pdf Size:292K _st

mended footprint Doc ID 12246 Rev 2 3/12 Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STC5DNF30V 2 Electrical characteristics (TCASE = 25 �C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS ID = 250 �A, VGS= 0 30 V voltage VDS = max rating, 1 �A Zero gate voltage drain IDSS current (VGS = 0) VDS = max rating @125�C 10 �A Gate body leakage current IGSS VGS = �8 V �100

1.36. bc547b_bc547c.pdf Size:60K _st

0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree 3/5 BC547B / BC547C TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A1 4.80 0.189 T 3.80 0.150 T1 1.60 0.063 T2 2.30 0.091 d 0.48 0.019 P0 12.50 12.70 12.90 0.492 0.500 0.508 P2 5.65 6.35 7.05 0.222 0.250 0.278 F1,F2 2.44 2.54 2.94 0.096 0.100 0.116 delta H -2.00 2.00 -0.079 0.079 W 17.50 18.00 19.00 0.68

1.37. stc5nf20v.pdf Size:283K _st

olete Product(s) Electrical characteristics STC5NF20V 2 Electrical characteristics (TCASE=25�C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown ID = 250�A, VGS= 0 20 V voltage VDS = Max rating, Zero gate voltage drain 1 �A IDSS current (VGS = 0) VDS = Max rating @125�C 10 �A Gate body leakage current IGSS VGS = �12V �100 nA (VDS = 0) VGS(th) VDS= VGS, ID = 250�A Gate threshold voltage 0.6 V

1.38. stc5nf30v.pdf Size:324K _st

minimum recommended footprint 3/12 Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristics STC5NF30V 2 Electrical characteristics (TCASE=25�C unless otherwise specified) Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown ID = 250�A, VGS= 0 30 V voltage VDS = Max rating, Zero gate voltage drain 1 �A IDSS current (VGS = 0) VDS = Max rating @125�C 10 �A Gate body leakag

1.39. ste53nc50.pdf Size:278K _st

rd Transconductance VDS > ID(on) x RDS(on)max, 42 S ID = 15 A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 11.2 nF Coss Output Capacitance 1350 pF Crss Reverse Transfer 115 pF Capacitance Note: 1. Pulsed: Pulse duration = 300 �s, duty cycle 1.5 %. 2/8 STE53NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 26.5A 46 ns RG = 4.7? VGS = 10V tr Rise Time 70 ns (see test circu

1.40. 2stc5242.pdf Size:183K _st

voltage 4/9 2STC5242 Electrical characteristics 2.2 Test circuit Figure 8. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/9 Package mechanical data 2STC5242 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK� packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in co

1.41. stb4nc50.pdf Size:244K _st

tate Drain Current 4A VGS =10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit VDS > ID(on) x RDS(on)max, gfs (1) Forward Transconductance 3S ID =2A Ciss Input Capacitance 315 pF Coss Output Capacitance 52 pF VDS = 25V, f = 1 MHz, VGS = 0 Crss Reverse Transfer 7.7 pF Capacitance 2/8 STB4NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 300V, ID = 2 A 10 ns RG = 4.7? VGS =

1.42. stb8nc50.pdf Size:441K _st

1) Forward Transconductance 7.5 S ID =2A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1050 pF Coss Output Capacitance 165 pF Crss Reverse Transfer 25 pF Capacitance 2/9 STB8NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 4A 19 ns RG = 4.7? VGS = 10V tr Rise Time 14 ns (see test circuit, Figure 3) Qg Total Gate Charge VDD = 400V, ID = 8A, 36 45 nC VGS = 10V Qgs Gate-S

1.43. stp3nc50.pdf Size:238K _st

nce VDS > ID(on) x RDS(on)max, 2S ID = 1.4A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 260 pF Coss Output Capacitance 45 pF Crss Reverse Transfer 5pF Capacitance 2/8 STP3NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) VDD = 250V, ID = 1.4 A 10 ns Turn-on Delay Time 10 ns tr Rise Time RG = 4.7? VGS = 10V (see test circuit, Figure 3) Qg Total Gate Charge VDD = 400V, ID = 2.8 A, 10 13.5 nC Gate-Source

1.44. 2stc5200.pdf Size:182K _st

voltage 4/9 2STC5200 Electrical characteristics 2.2 Test circuit Figure 8. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 5/9 Package mechanical data 2STC5200 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK� packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in

1.45. stp10nc50(fp).pdf Size:149K _st

ain-source 500 V ID = 250 �A VGS = 0 Breakdown Voltage IDSS Zero Gate Voltage VDS = Max Rating 1 �A Drain Current (V = 0) V = Max Rating T = 125 oC 50 �A GS DS c I Gate-body Leakage VGS = � 30 V � 100 nA GSS Current (VDS = 0) ON (?) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold 2 3 4 V VDS = VGS ID = 250 �A Voltage RDS(on) Static Drain-source On VGS = 10V ID = 5 A 0.48 0.52 ? Resistance I On State Drain Current V > I x R 10 A D(on) DS D(on) DS(on)m

1.46. stp5nc50,stb5nc50.pdf Size:534K _st

(VGS =0) VDS = Max Rating, TC = 125 �C 50 �A IGSS Gate-body Leakage VGS = �30V �100 nA Current (VDS = 0) (1) ON Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS, ID = 250�A 2 3 4 V RDS(on) Static Drain-source On VGS =10V, ID =2A 1.3 1.5 ? Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit 4S gfs (1) Forward Transconductance VDS >ID(on) x RDS(on)max, ID = 2.5A Ciss Input Capacitance VDS =25V, f =1MHz, VGS =0 480 pF

1.47. sts8c5h30l.pdf Size:463K _st

ction-ambient single Rthj-a (1) 62.5 �C/W operating Thermal resistance junction-ambient dual Rthj-a (1) 78 �C/W operating 1. When mounted on 1 inch? FR-4 board, 2 oz. Cu., t ? 10 sec Note: For the p-channel MOSFET actual polarity of voltages and current has to be reversed Doc ID 10809 Rev 6 3/14 Electrical characteristics STS8C5H30L 2 Electrical characteristics (TCASE = 25 �C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit

1.48. 2sc5200.pdf Size:148K _st

circuit Figure 4. Resistive load switching test circuit 1. Fast electronic switch 2. Non-inductive resistor 4/8 Doc ID 16310 Rev 1 2SC5200 Package mechanical data 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK� packages, depending on their level of environmental compliance. ECOPACK� specifications, grade definitions and product status are available at: www.st.com. ECOPACK� is an ST trademark. Doc ID 16

1.49. stw20nc50.pdf Size:249K _st2

RDS(on)max, ID(on) On State Drain Current 18.4 A VGS =10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit VDS > ID(on) x RDS(on)max, Forward Transconductance 18 S gfs (1) ID =9A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2980 pF Coss Output Capacitance 410 pF Crss Reverse Transfer 58 pF Capacitance 2/8 STW20NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V

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RDS(on)max, 13 S ID =7A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1970 pF Coss Output Capacitance 300 pF Crss Reverse Transfer 48 pF Capacitance 2/8 STU13NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) VDD = 250V, ID = 7 A 20 ns Turn-on Delay Time RG = 4.7? VGS = 10V tr Rise Time 23 ns (see test circuit, Figure 3) Qg Total Gate Charge 75 105 nC VDD = 400V, ID = 14 A, Qgs Gate-Source Charge 10 nC

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x RDS(on)max, 18 S ID =9A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2980 pF Coss Output Capacitance 410 pF Crss Reverse Transfer 58 pF Capacitance 2/8 STU16NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) VDD = 250V, ID = 10 A 29 ns Turn-on Delay Time RG = 4.7? VGS = 10V tr Rise Time 21 ns (see test circuit, Figure 3) Qg Total Gate Charge 95 128 nC VDD = 400V, ID = 20 A, Qgs Gate-Source Charge 14

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on)max, gfs Forward Transconductance 13 S ID =7A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 2000 pF Coss Output Capacitance 300 pF Crss Reverse Transfer 43 pF Capacitance 2/8 STW14NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250V, ID = 7 A 20 ns RG = 4.7?, VGS = 10V tr Rise Time 23 ns (see test circuit, Figure 3) Qg Total Gate Charge VDD = 400V, ID = 14 A, 75 90 nC VGS =

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ied operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These

1.57. 2sc5254.pdf Size:177K _toshiba

autions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality a

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gn for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconducto

1.59. 2sc5465.pdf Size:146K _toshiba

C (mA) Collector current IC (mA) Safe Operating Area 3 IC max (pulsed)* 10 �s* 1 100 �s* IC max 1 ms* (continuous) 0.3 IC � VBE DC operation 800 Tc = 25�C Common emitter 0.1 VCE = 5 V 10 ms* 600 0.03 100 ms* 400 0.01 *: Single nonrepetitive pulse Tc = 25�C 200 0.003 Curves must be derated Tc = 100�C 25 -55 VCEO max linearly with increase in temperature. 0 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 10 30 100 300 1000 3000 Base-emitter vo

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utions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality an

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ications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment th

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.033 68.9 0.506 -36.6 400 0.147 -116.5 9.693 97.8 0.057 72.0 0.353 -32.4 600 0.097 -150.0 6.680 88.8 0.082 72.7 0.313 -27.9 800 0.083 179.5 5.088 82.3 0.106 72.1 0.300 -25.9 1000 0.084 151.3 4.141 76.7 0.131 71.2 0.295 -25.2 1200 0.095 135.6 3.497 72.2 0.156 69.8 0.295 -25.7 1400 0.108 124.2 3.058 67.7 0.182 67.7 0.297 -27.3 1600 0.121 113.8 2.699 63.2 0.206 65.2 0.289 -30.1 1800 0.128 108.4 2.432 59.2 0.228 63.0 0.283 -33.2 2000 0.146 104.2 2.241 55.5 0.253 61.6 0.274 -36.5

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C 1 -55 25 0.01 100 25 0.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 3 Common emitter VCE = 2 V Single nonrepetitive pulse 2 Ta = 100�C 25 1 -55 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) 3 2001-12-12 FE C DC current gain h Collector current I (A) CE (sat) BE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I

1.64. 2sc5387.pdf Size:318K _toshiba

s and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or

1.65. 2sc5317.pdf Size:121K _toshiba

in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or

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IBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for us

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0.001 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) IC � VBE VCE � IB 2 10 Common emitter Common emitter 5 VCE = 2 V Tc = 25�C 3 1 IC = 2.5 A 0.5 1 2 A 0.3 Tc = 100�C -55�C 0.1 1 A 0.05 0.03 25�C 0 0.01 0 0.5 1 1.5 0.001 0.003 0.01 0.03 0.1 0.3 1 3 Base-emitter voltage VBE (V) Base current IB (A) 3 2002-08-21 FE C DC current gain h Collector current I (A) BE (sat

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le ? 2% IB1 = -IB2 = 5 mA Fall time tf ? 40 ? Note: hFE classification A(J): 300 to 600, B(K): 500 to 1000 ( ) Marking 2 2010-04-18 60 ? 50 ? 600 ? 2SC5376CT IC � VCE hFE � IC 1.0 10000 COMMON COMMON 5000 EMITTER EMITTER Ta = 25�C 3000 VCE = 2 V 0.8 6 5 1000 Ta = 100�C 4 0.6 25 500 3 300 -25 2 0.4 1 100 50 0.2 30 IB = 0.5 mA R 10 0 0 1 2 3 4 5 0.1 0.3 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRE

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ent IC (A) Safe Operating Area 10 IC max (pulse)* 10 �s* 1 ms* 100 �s* 3 IC max 10 ms* (continuous) 100 ms* 1 DC operation Tc = 25�C 0.3 0.1 *: Single nonrepetitive pulse Tc = 25�C 0.03 Curves must be derated linearly with increase in VCEO max temperature. 0.01 2 10 100 1000 Collector-emitter voltage VCE (V) 3 2002-07-23 C C Collector current I (A) Collector current I (A) FE DC current gain h CE (sat) V (V) Collector-emitter

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e VCC = 6 V VBB = -3 V < 2% Duty Cycle = Falll time tf ? 40 ? ns IB1 = -IB2 = 5 mA Note: hFE Classification A: 300 ~ 600, B: 500 ~ 1000 2 2007-11-01 60 ? 50 ? 600 ? 2SC5376FV IC � VCE hFE � IC 1.0 10000 Common emitter Common emitter 5000 VCE = 2 V Ta = 25�C 3000 0.8 6 5 1000 Ta = 100�C 4 0.6 25 500 3 300 -25 2 0.4 1 100 50 0.2 30 IB = 0.5 mA 10 0 0 1 2 3 4 5 0.1 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Coll

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7 68.5 0.783 -25.6 400 0.392 -64.1 8.847 114.7 0.059 64.3 0.586 -31.8 600 0.248 -78.3 6.514 101.4 0.077 64.1 0.495 -32.0 800 0.161 -87.5 5.094 92.6 0.096 64.7 0.449 -31.2 1000 0.105 -95.3 4.213 85.9 0.114 64.9 0.423 -30.5 1200 0.060 -106.3 3.589 80.3 0.133 65.0 0.412 -30.8 1400 0.028 -121.7 3.139 74.9 0.154 64.0 0.406 -32.1 1600 0.021 -158.4 2.786 70.1 0.173 62.5 0.398 -34.0 1800 0.035 171.6 2.498 66.0 0.190 61.2 0.387 -36.7 2000 0.054 144.0 2.300 62.3 0.210 60.7 0.377 -38.4

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VCE (sat) � IC VCE � IB 10 10 Common emitter Common emitter Tc = -25�C Tc = -25�C 5 8 3 8 6 6 1 4 0.5 4 0.3 IC/IB = 2 2 0.1 3 4 5 IC = 6 A 0.05 0.2 1 3 5 10 30 50 100 0 0 0.4 0.8 1.2 1.6 2 2.4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 10 Common emitter Common emitter Tc = 25�C Tc = 25�C 5 8 3 8 6 1 6 4 0.5 4 0.3 IC/IB = 2 2 0.1 3 4 5 IC = 6 A 0.05 0.2 1 3 5 10 30 50 100

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he entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliab

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0.05 0.2 1 3 5 10 30 50 100 0 0 0.8 1.6 2.4 3.2 4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 10 Common Common emitter emitter Tc = 25�C 5 Tc = 25�C 8 3 6 1 10 6 0.5 8 4 0.3 IC/IB = 4 IC = 17 A 2 0.1 7 8 9 10 11 12 13 14 15 16 0.05 0.2 1 3 5 10 30 50 100 0 0 0.8 1.6 2.4 3.2 4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 Common 10 emitter Common emitter Tc = 100�C Tc =

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the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Relia

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Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-11-02 2SC5198 IC � VCE IC � VBE 10 10 250 200 Common emitter 150 Tc = 25�C 8 100 8 6 6 50 Tc = 100�C 40 25�C 4 4 30 -25�C 20 2 2 Common emitter VCE = 5 V IB = 10 mA 0 0 0 2 4 6 8 10 0 0.4 0.8 1.2 1.6 2.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) VCE (sat) � IC hFE � IC 10 1000 Tc = 100�C 1

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(mW) HN3C51F RESTRICTIONS ON PRODUCT USE � Toshiba Corporation, and its subsidiaries and affiliates (collectively �TOSHIBA�), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively �Product�) without notice. � This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA�s written permission, reproduction is permissible only if reproduction is wit

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Common emitter 120 80 VCE = 5 V 1000 140 0.8 60 300 40 Ta = 100�C 0.6 100 20 -55 30 25 0.4 10 -55 10 IB = 5 mA 100�C 0.2 3 Common emitter Ta = 25�C 1 0 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0 0.4 0.8 1.2 1.6 2 2.4 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) - IC VBE (sat) - IC 30 30 Common emitter Common emitter ? = 8 ? = 8 10 10 3 3 Ta = -55�C 1 1 0.3 0.3 25 Ta = 100�C 100 0.1 0.1 0.03 0.03 25 -55

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VCE � IB VCE (sat) � IC 10 10 Common emitter Common emitter 10 6 Tc = 25? Tc = 25? 8 IC/IB = 4 1 6 5 6 7 Ic = 8 A 8 4 0.1 2 0 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 Base current IB (A) Collector current IC (A) VCE � IB VCE (sat) � IC 10 10 Common emitter Common emitter 10 6 Tc = 100? Tc = 100? 8 IC/IB = 4 1 6 5 6 7 Ic = 8 A 8 4 0.1 2 0 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 Collector current IC (A) Base current IC (A) 3 2004-5-18

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100�C 0.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 6 Common emitter VCE = 2 V Ta = 100�C 25 -55 5 Single nonrepetitive pulse 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Base-emitter voltage VBE (V) 3 2001-12-17 FE C DC current gain h Collector current I (A) CE (sat) BE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I (A) 2SC5738

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.1 0.1 0.03 0.01 0.03 0.1 0.3 1 3 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) IC � VBE PC � Ta 2.0 20 (1) Tc = Ta Common emitter infinite heat sink VCE = 5 V (2) No heat sink 1.6 16 (1) 1.2 12 0.8 8 0.4 4 Tc = 100�C 25 -55 (2) 0 0 0 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 175 200 Base-emitter voltage VBE (V) Ambient temperature Ta (�C) 3 2002-07-23 FE C DC current gain h Collector current I (A) BE (sat)

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.6 0.034 64.3 0.714 -27.5 400 0.367 -90.3 9.581 107.5 0.052 61.9 0.534 -30.8 600 0.260 -110.7 6.781 96.1 0.067 63.9 0.462 -30.1 800 0.209 -126.9 5.207 88.6 0.083 65.2 0.428 -29.2 1000 0.178 -141.8 4.269 82.5 0.100 66.4 0.412 -28.6 1200 0.160 -153.7 3.618 77.7 0.117 66.7 0.403 -28.3 1400 0.150 -166.3 3.152 72.7 0.135 65.4 0.398 -28.8 1600 0.141 -175.2 2.801 68.7 0.149 64.0 0.393 -29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 -29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.395

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-emitter voltage VBE (V) VBE (sat) � IC VBE (sat) � IC 10 10 Common emitter Common emitter IC/IB = 10 IC/IB = 5 3 3 25 25 -55 -55 1 1 Tc = 100�C Tc = 100�C 0.3 0.3 0.1 0.1 0.05 0.05 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 Collector current IC (mA) Collector current IC (mA) 3 2002-07-23 FE C DC current gain h Collector current I (mA) C C Collector current I (mA) Collector current I (mA) BE (sat) BE (sat) V (V) V (V) Base-emitter saturation volt

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ge VCE (V) 3 2005-07-27 C C Collector current I (A) Collector current I (A) FE CE (sat) V (V) DC current gain h Collector-emitter saturation voltage C T Collector current I (A) Transition frequency f (MHz) 2SC5949 4 2005-07-27

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Common emitter Common emitter VCE = 5 V IC / IB = 10 Tc = 100�C 25 100 0.1 -25 Tc = -25�C 25 100 10 0.01 1 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 Collector current IC (A) Collector current IC (A) VBE (sat) � IC fT � IC 10 100 Common emitter IC / IB = 10 Tc = -25�C 1 10 25 100 0.1 1 Common emitter VCE = 5 V Tc = 25�C 0.01 0.1 0.01 0.1 1 10 100 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) 3 2006-11-16 C Collecto

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cations. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment tha

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0 148.1 0.036 70.3 0.893 -29.1 400 0.570 -83.4 11.651 125.1 0.058 59.4 0.726 -50.2 600 0.488 -111.0 8.996 110.5 0.072 54.8 0.596 -64.8 800 0.432 -133.1 7.207 100.0 0.083 52.8 0.508 -76.0 1000 0.403 -150.9 5.938 91.9 0.093 53.0 0.446 -85.0 1200 0.378 -167.1 4.989 85.3 0.101 53.1 0.401 -92.9 1400 0.364 177.9 4.292 79.9 0.110 54.0 0.363 -100.0 1600 0.348 164.4 3.761 75.3 0.120 54.7 0.336 -105.7 1800 0.339 151.5 3.353 71.1 0.130 55.7 0.314 -110.2 2000 0.334 138.6 3.015 67.2 0.140 5

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100�C -55 25 0.01 25 -55 0.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 5 Common emitter VCE = 2 V Single nonrepetitive pulse 4 3 2 1 Ta = 100�C 25 -55 0 0 0.4 0.8 1.2 Base-emitter voltage VBE (V) 3 2001-12-17 C FE Collector current I (A) DC current gain h BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I

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entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliabili

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Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of hum

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aking a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOS

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0.03 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) 3 2004-07-07 C C Collector current I (A) Collector current I (A) FE CE (sat) V (V) DC current gain h Collector-emitter saturation voltage C Collector current I (A) 2SC5242 RESTRICTIONS ON PRODUCT USE 030619EAA � The information contained herein is subject to change without notice. � The information contained herein is presented only as a guide for the applications of our products. No responsibility is as

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0.003 0.01 0.03 0.1 0.3 1 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Collector current IC (A) IC � VBE 2 Common emitter VCE = 2 V Single nonrepetitive pulse 1.6 1.2 0.8 Ta = 100�C 25 -55 0.4 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) 3 2002-07-22 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I (A) 2SC

1.109. 2sc5464.pdf Size:124K _toshiba

m, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handboo

1.110. 2sc5149.pdf Size:193K _toshiba

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67.3 0.786 -27.0 400 0.427 -64.4 8.852 116.1 0.061 61.6 0.579 -35.0 600 0.280 -79.5 6.591 102.9 0.078 61.8 0.476 -35.9 800 0.193 -89.7 5.191 94.3 0.096 62.5 0.420 -35.0 1000 0.134 -99.3 4.288 87.8 0.112 63.2 0.390 -34.2 1200 0.088 -112.3 3.661 81.9 0.130 63.8 0.374 -34.0 1400 0.056 -129.8 3.232 76.9 0.150 63.4 0.366 -34.8 1600 0.035 -169.0 2.857 72.1 0.168 62.5 0.356 -36.6 1800 0.040 157.0 2.574 68.1 0.185 61.4 0.347 -39.0 2000 0.054 131.5 2.363 64.3 0.203 61.3 0.338 -40.2 4

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.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 1.5 Common emitter VCE = 2 V Single nonrepetitive 1.2 pulse 0.9 0.6 Ta = 100�C -55 0.3 25 0 0 0.3 0.6 0.9 1.2 1.5 Base-emitter voltage VBE (V) 3 2001-12-17 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I (A) 2SC5819

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ing Area 30 IC � VBE IC max (pulsed)* 8 10 �s* 10 Common emitter IC max VCE = 5 V (continuous) 3 6 100 �s* DC operation 1 ms* 1 Tc = 25�C 4 10 ms* 0.3 100 ms* 0.1 *: Single nonrepetitive pulse Tc = 100�C 25 -55 2 Tc = 25�C 0.03 Curves must be derated linearly VCEO max with increase in temperature. 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 3 10 30 100 300 1000 3000 Base-emitter voltage VBE (V) Collector-emitter voltage VCE (V) 3 2004-07-26 FE C DC

1.118. 2sc5713.pdf Size:159K _toshiba

-55�C 25�C 0.01 25�C 100�C 0.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 5 Common emitter VCE = 2 V Single nonrepetitive pulse 4 3 Ta = 100�C 2 -55�C 25�C 1 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) 3 2001-12-17 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collec

1.119. 2sc5110.pdf Size:246K _toshiba

y in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� o

1.120. 2sc5360.pdf Size:116K _toshiba

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040 67.3 0.786 -27.0 400 0.427 -64.4 8.852 116.1 0.061 61.6 0.579 -35.0 600 0.280 -79.5 6.591 102.9 0.078 61.8 0.476 -35.9 800 0.193 -89.7 5.191 94.3 0.096 62.5 0.420 -35.0 1000 0.134 -99.3 4.288 87.8 0.112 63.2 0.390 -34.2 1200 0.088 -112.3 3.661 81.9 0.130 63.8 0.374 -34.0 1400 0.056 -129.8 3.232 76.9 0.150 63.4 0.366 -34.8 1600 0.035 -169.0 2.857 72.1 0.168 62.5 0.356 -36.6 1800 0.040 157.0 2.574 68.1 0.185 61.4 0.347 -39.0 2000 0.054 131.5 2.363 64.3 0.203 61.3 0.338 -40.2

1.123. 2sc5232.pdf Size:270K _toshiba

TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted f

1.124. 2sc5280.pdf Size:344K _toshiba

ithin specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

1.125. 2sc5322ft.pdf Size:124K _toshiba

a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA S

1.126. 2sc5108.pdf Size:242K _toshiba

making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �T

1.127. 2sc5028.pdf Size:218K _toshiba

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ng ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA pr

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ecified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). T

1.133. 2sc5421.pdf Size:322K _toshiba

HIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodi

1.134. 2sc5422.pdf Size:316K _toshiba

Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of whi

1.135. 2sc5087r_101223.pdf Size:100K _toshiba

ment and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA�s written permission, reproduction is permissible only if reproduction is without alteration/omission. � Though TOSHIBA works continually to improve Product�s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems whi

1.136. 2sc5317ft.pdf Size:125K _toshiba

andards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semicon

1.137. 2sc5352.pdf Size:188K _toshiba

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247 109.3 0.034 59.7 0.420 -43.7 400 0.329 -152.1 8.775 94.5 0.054 66.0 0.280 -38.4 600 0.321 -170.6 6.018 86.3 0.075 69.5 0.244 -33.7 800 0.321 177.5 4.598 80.2 0.097 70.7 0.231 -31.7 1000 0.324 167.9 3.767 74.8 0.119 71.2 0.225 -31.3 1200 0.332 160.3 3.191 70.0 0.142 71.3 0.225 -32.7 1400 0.341 153.5 2.812 65.2 0.168 70.0 0.225 -36.2 1600 0.352 146.6 2.502 60.7 0.190 68.4 0.222 -40.3 1800 0.362 142.2 2.264 56.5 0.212 66.8 0.217 -44.9 2000 0.379 137.7 2.092 52.8 0.236 66.3 0.2

1.139. 2sc5712.pdf Size:146K _toshiba

me Test Circuit & Timing Chart Note 3: A line beside a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous

1.140. 2sc5386.pdf Size:317K _toshiba

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as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

1.142. 2sc5106.pdf Size:238K _toshiba

or the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Re

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current I (A) FE CE (sat) V (V) DC current gain h Collector-emitter saturation voltage C Collector current I (A) 2SC5171 RESTRICTIONS ON PRODUCT USE 030619EAA � The information contained herein is subject to change without notice. � The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No

1.146. 2sc5093.pdf Size:300K _toshiba

034 126.0 0.032 55.7 0.629 -53.5 400 0.521 -137.0 13.888 105.1 0.045 52.0 0.407 -75.8 600 0.505 -160.0 9.597 94.2 0.054 54.0 0.311 -89.3 800 0.505 -174.7 7.272 86.8 0.064 56.4 0.263 -101.3 1000 0.508 172.6 5.797 81.0 0.075 59.0 0.233 -112.0 1200 0.519 163.1 4.800 76.5 0.085 60.4 0.208 -122.9 1400 0.518 153.4 4.119 72.8 0.095 62.0 0.189 -132.7 1600 0.525 144.3 3.603 69.1 0.106 63.2 0.172 -141.7 1800 0.532 135.6 3.231 66.4 0.119 63.8 0.153 -149.3 2000 0.523 125.9 2.952 62.8 0.131

1.147. 2sc5765.pdf Size:158K _toshiba

Collector-Emitter saturation voltage FE C DC current gain h Collector current I (A) C C P (mW) Collector current I (A) Collector power dissipation 2SC5765 rth � tw 1000 When a device is mounted on a Glass epoxy board (35 mm ? 30 mm ? 1 mm) 100 10 Single pulse 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) 3 2002-01-16 th r (�C/W) Transient thermal impedance 2SC5765 RESTRICTIONS ON PRODUCT USE 000707EAA � TOSHIBA is continually working to impr

1.148. 2sc5098.pdf Size:298K _toshiba

50.5 0.037 70.4 0.900 -28.4 400 0.625 -77.4 11.757 128.3 0.060 58.8 0.735 -50.2 600 0.521 -105.4 9.204 112.6 0.074 52.5 0.600 -65.3 800 0.455 -128.8 7.420 101.5 0.085 50.0 0.503 -77.3 1000 0.412 -147.7 6.078 92.9 0.093 49.5 0.433 -86.9 1200 0.388 -165.4 5.105 86.1 0.100 49.3 0.376 -95.4 1400 0.370 179.0 4.377 80.9 0.108 50.4 0.330 -102.8 1600 0.360 165.6 3.855 76.2 0.116 51.4 0.295 -108.7 1800 0.348 151.3 3.441 72.3 0.126 52.3 0.265 -113.4 2000 0.333 137.7 3.114 68.4 0.135 53.2

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e contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-02-05 L R 2SC5886A IC � VCE hFE � IC 6 10000 Common emitter Common emitter Tc = 25�C VCE = 2 V 70 50 40 30 Pulse test Pulse test

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9.6 0.034 64.3 0.714 -27.5 400 0.367 -90.3 9.581 107.5 0.052 61.9 0.534 -30.8 600 0.260 -110.7 6.781 96.1 0.067 63.9 0.462 -30.1 800 0.209 -126.9 5.207 88.6 0.083 65.2 0.428 -29.2 1000 0.178 -141.8 4.269 82.5 0.100 66.4 0.412 -28.6 1200 0.160 -153.7 3.618 77.7 0.117 66.7 0.403 -28.3 1400 0.150 -166.3 3.152 72.7 0.135 65.4 0.398 -28.8 1600 0.141 -175.2 2.801 68.7 0.149 64.0 0.393 -29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 -29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.39

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25 0.01 Ta = 100�C 0.001 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) IC � VBE 6 Common emitter VCE = 2 V Single nonrepetitive pulse Ta = 100�C 25 -55 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 Base-emitter voltage VBE (V) 3 2001-12-17 FE C DC current gain h Collector current I (A) CE (sat) BE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I

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20 ?s IB1 IB1 Output Input IB2 IB2 Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart MARKING Part No. (or abbreviation code) W W Lot code (month) Lot code (year) Dot: even year No dot: odd year 2 2006-11-13 L R 2SC5976 IC � VCE hFE � IC 3.0 1000 20 15 10 Ta = 100�C 2.5 8 25�C 2.0 6 -55�C 100 1.5 4 1.0 IB = 2 mA Common emitter 0.5 Common emitter VCE = 2 V Ta = 25�C Single nonrepetitive pulse Single nonrepe

1.161. 2sc5810.pdf Size:177K _toshiba

0.01 0.1 0.003 0.03 0.001 0.003 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) IC � VBE 1.0 Common emitter VCE = 2 V Single nonrepetitive pulse 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2002-08-13 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector cur

1.162. hn3c56fu_071101.pdf Size:194K _toshiba

(collectively �TOSHIBA�), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively �Product�) without notice. � This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA�s written permission, reproduction is permissible only if reproduction is without alteration/omission. � Though TOSHIBA works continually to improve Product�s quality and reliabili

1.163. 2sc5255.pdf Size:180K _toshiba

9 0.671 -34.0 400 0.271 -92.4 11.34 106.5 0.053 74.7 0.496 -41.9 600 0.211 -113.2 7.947 96.4 0.075 76.6 0.425 -45.8 800 0.19 -131.4 6.139 89.3 0.097 77.3 0.386 -50.1 1000 0.179 -146.5 4.975 83.6 0.12 77.3 0.355 -55.2 1200 0.172 -164 4.193 78.6 0.142 77 0.331 -59.8 1400 0.169 -175.6 3.627 74.3 0.166 76.5 0.311 -64.3 1600 0.165 168.7 3.215 70.4 0.189 76 0.292 -68.2 1800 0.16 155.5 2.866 66.7 0.213 75.2 0.278 -71.1 2000 0.157 143.6 2.587 63.4 0.236 74.2 0.267 -72.7 4 2003-03-24

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1.165. 2sc5091.pdf Size:469K _toshiba

3 65.3 0.494 -43.5 400 0.213 -134.2 10.303 99.2 0.054 68.9 0.312 -42.4 600 0.185 -160.0 7.111 90.3 0.076 70.8 0.258 -37.6 800 0.176 -178.2 5.415 84.3 0.098 71.2 0.236 -34.3 1000 0.174 167.8 4.400 79.2 0.120 71.1 0.228 -32.0 1200 0.178 156.8 3.712 74.8 0.143 70.3 0.226 -31.5 1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8 1600 0.194 139.7 2.874 66.3 0.190 66.6 0.223 -35.9 1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0 2000 0.215 127.8 2.369 58.8 0.232 63.5 0.211 -41.9 4

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1.168. 2sc5748.pdf Size:321K _toshiba

emitter Common emitter Tc = 25�C 5 Tc = 25�C 8 3 6 1 0.5 10 4 6 0.3 8 IC/IB = 4 2 0.1 7 8 9 10 11 IC = 12 A 0.05 0.2 1 3 5 10 30 50 100 0 0 0.8 1.6 2.4 3.2 4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 10 Common emitter Common emitter Tc = 100�C Tc = 100�C 5 8 3 6 1 10 8 6 IC/IB = 4 0.5 4 0.3 2 7 8 9 10 11 IC = 12 A 0.1 0 0.05 0 0.8 1.6 2.4 3.2 4 0.2 1 3 5 10 30 50 100 Base curre

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1.170. 2sc5359.pdf Size:121K _toshiba

Collector-emitter voltage VCE (V) 3 2004-07-07 C C Collector current I (A) Collector current I (A) FE CE (sat) V (V) DC current gain h Collector-emitter saturation voltage C Collector current I (A) 2SC5359 RESTRICTIONS ON PRODUCT USE 030619EAA � The information contained herein is subject to change without notice. � The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any inf

1.171. 2sc5859.pdf Size:200K _toshiba

Common emitter Common emitter Tc = 25? Tc = 25? 8 6 1 6 IC/IB = 4 10 10 12 14 16 Ic = 18 A 4 8 0.1 9 2 8 7 0 0.01 0 1 2 3 4 5 1 10 100 Base current IB (A) Collector current IC (A) VCE � IB VCE (sat) � IC 10 10 Common emitter Common emitter Tc = 100? Tc = 100? 8 6 1 IC/IB = 4 6 10 Ic = 18 A 12 14 16 10 8 4 0.1 9 2 8 7 0 0.01 0 1 2 3 4 5 1 10 100 Base current IC (A) Collector current IC (A) 3 2004-5-18 CE CE(sat) V (

1.172. hn4c51j_071101.pdf Size:293K _toshiba

and its subsidiaries and affiliates (collectively �TOSHIBA�), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively �Product�) without notice. � This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA�s written permission, reproduction is permissible only if reproduction is without alteration/omission. � Though TOSHIBA works continually to impr

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cautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality

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113.2 0.035 56.7 0.484 -40.9 400 0.375 -145.6 9.090 96.5 0.052 62.2 0.331 -37.8 600 0.351 -164.4 6.252 88.1 0.070 66.5 0.291 -34.1 800 0.343 -176.7 4.762 81.9 0.089 68.9 0.277 -33.3 1000 0.338 174.8 3.875 76.6 0.109 70.2 0.273 -34.0 1200 0.337 167.9 3.285 71.8 0.130 70.8 0.274 -36.2 1400 0.343 161.6 2.874 67.2 0.152 70.6 0.274 -39.3 1600 0.343 156.2 2.553 62.9 0.173 69.8 0.274 -43.4 1800 0.348 151.2 2.317 58.8 0.195 68.9 0.273 -47.8 2000 0.354 146.2 2.113 55.0 0.218 68.2 0.272

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design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semicond

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29.6 0.034 64.3 0.714 -27.5 400 0.367 -90.3 9.581 107.5 0.052 61.9 0.534 -30.8 600 0.260 -110.7 6.781 96.1 0.067 63.9 0.462 -30.1 800 0.209 -126.9 5.207 88.6 0.083 65.2 0.428 -29.2 1000 0.178 -141.8 4.269 82.5 0.100 66.4 0.412 -28.6 1200 0.160 -153.7 3.618 77.7 0.117 66.7 0.403 -28.3 1400 0.150 -166.3 3.152 72.7 0.135 65.4 0.398 -28.8 1600 0.141 -175.2 2.801 68.7 0.149 64.0 0.393 -29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 -29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.3

1.184. 2sc5316.pdf Size:125K _toshiba

1.185. 2sc5084.pdf Size:474K _toshiba

43 107.4 0.034 62.7 0.415 -40.5 400 0.299 -158.7 8.266 92.4 0.056 69.3 0.293 -34.2 600 0.293 -178.0 5.664 84.0 0.080 71.7 0.265 -30.4 800 0.294 169.0 4.334 77.3 0.104 72.1 0.255 -29.9 1000 0.299 157.9 3.528 71.2 0.129 72.0 0.252 -30.6 1200 0.310 149.5 3.002 66.0 0.155 71.4 0.254 -32.5 1400 0.321 142.0 2.629 61.0 0.183 69.7 0.255 -36.1 1600 0.332 134.9 2.336 56.3 0.209 67.6 0.248 -40.6 1800 0.341 129.5 2.121 51.7 0.234 65.6 0.242 -45.9 2000 0.366 124.3 1.958 47.3 0.260 64.6 0.23

1.186. 2sc5464ft.pdf Size:125K _toshiba

tire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability

1.187. 2sc5376f.pdf Size:145K _toshiba

current IC (mA) IC � VBE Cob � VCB 1000 100 IE = 0 A Common emitter 500 f = 1 MHz VCE = 2V 50 300 Ta = 25�C 30 100 50 10 30 Ta = 100�C 25 -25 5 10 5 3 3 1 1 0.0 0.4 0.8 1.2 1.6 0.1 0.3 1 3 10 30 100 Base-emitter voltage VBE (V) Collector-base voltage VCB (V) 3 2002-01-16 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (mV) Base-emitter saturation voltage Collector-emitter saturation voltage ob C Collector curre

1.188. 2sc5549.pdf Size:205K _toshiba

1.189. 2sc5208.pdf Size:167K _toshiba

Collector-emitter voltage VCE (V) VCE (sat) � IC VBE (sat) � IC 10 10 Common emitter Common emitter 5 5 IC/IB = 10 IC/IB = 10 3 3 1 1 Ta = -40�C 0.5 0.5 100 0.3 0.3 25 0.1 Ta = 100�C 0.1 1 3 10 30 100 300 1000 0.05 -40 25 Collector current IC (mA) 0.03 1 3 10 30 100 300 1000 Collector current IC (mA) IC � VBE Switching Characteristics 1000 100 Common emitter 50 IC/IB = 10 VCE = 5 V 30 IB1 = -IB2 800 Pulse width = 20 ?s Duty cycle

1.190. 2sc5262.pdf Size:126K _toshiba

1.191. 2sc5196.pdf Size:170K _toshiba

1.192. 2sc5906.pdf Size:165K _toshiba

de (month) Lot code (year) Dot: even year No dot: odd year 2 2006-11-13 L R 2SC5906 IC � VCE hFE - IC 8 30000 Common emitter Ta = 25�C 20 10000 16 6 3000 12 1000 10 4 300 8 Ta = -55�C 25 100 6 100 2 4 30 Common emitter VCE = 2 V IB = 2mA 10 0 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0 1 2 3 4 5 6 Collector current IC (A) Collector-emitter voltage VCE (V) VCE (sat) - IC VBE (sat) - IC 3 30 Common emitter Common emitter IC/IB = 30

1.193. 2sc5358.pdf Size:171K _toshiba

1.194. 2sc5144.pdf Size:206K _toshiba

1.195. 2sc5092.pdf Size:475K _toshiba

.009 123.0 0.033 56.9 0.605 -57.8 400 0.521 -147.5 13.445 102.7 0.045 54.9 0.392 -81.2 600 0.521 -167.1 9.277 92.8 0.057 57.9 0.309 -95.5 800 0.525 -178.9 7.029 85.7 0.069 60.0 0.271 -107.3 1000 0.526 -168.8 5.651 80.0 0.082 62.5 0.250 -117.9 1200 0.529 -158.7 4.688 75.6 0.094 63.4 0.236 -127.6 1400 0.531 -148.5 4.011 71.6 0.106 64.5 0.225 -136.2 1600 0.536 -140.4 3.531 68.1 0.119 65.1 0.214 -143.8 1800 0.539 -131.7 3.159 64.7 0.133 65.5 0.201 -149.8 2000 0.540 -122.8 2.842 61.

1.196. 2sc5459.pdf Size:186K _toshiba

1.197. 2sc5199.pdf Size:170K _toshiba

1.198. 2sc5048.pdf Size:209K _toshiba

1.199. 2sc5172.pdf Size:191K _toshiba

1.200. 2sc5717.pdf Size:411K _toshiba

IC = 17 A 2 0.1 7 8 9 10 11 12 13 14 15 16 0.05 0.2 1 3 5 10 30 50 100 0 0 0.8 1.6 2.4 3.2 4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 10 Common Common emitter emitter Tc = 25�C 5 Tc = 25�C 8 3 6 1 10 6 0.5 8 4 0.3 IC/IB = 4 IC = 17 A 2 0.1 7 8 9 10 11 12 13 14 15 16 0.05 0.2 1 3 5 10 30 50 100 0 0 0.8 1.6 2.4 3.2 4 Collector current IC (A) Base current IB (A) VCE � IB VCE (sat) � IC 10 Commo

1.201. 2sc5587.pdf Size:332K _toshiba

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neit

1.202. 2sc5356.pdf Size:175K _toshiba

.01 0.1 1 10 Collector current IC (A) Collector current IC (A) VBE (sat) � IC Switching Characteristics 10 10 IC = 5IB1 Common emitter 2IB1 = -IB2 IC/IB = 5 Pulse width = 20 �s tstg Duty cycle -55 25 ? 1% 1 1 Tc = 25�C tf Tc = 100�C tr 0.1 0.1 0.01 0.1 1 10 0.01 0.1 1 10 Collector current IC (A) Collector current IC (A) 3 2002-08-13 C C Collector current I (A) Collector current I (A) FE CE (sat) V (V) DC current gain h Collector-emitt

1.203. 2sc5324.pdf Size:123K _toshiba

1.204. 2sc5090.pdf Size:466K _toshiba

0.033 65.3 0.494 -43.5 400 0.213 -134.2 10.303 99.2 0.054 68.9 0.312 -42.4 600 0.185 -160.0 7.111 90.3 0.076 70.8 0.258 -37.6 800 0.176 -178.2 5.415 84.3 0.098 71.2 0.236 -34.3 1000 0.174 167.8 4.400 79.2 0.120 71.1 0.228 -32.0 1200 0.178 156.8 3.712 74.8 0.143 70.3 0.226 -31.5 1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8 1600 0.194 139.7 2.874 66.3 0.190 66.6 0.223 -35.9 1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0 2000 0.215 127.8 2.369 58.8 0.232 63.5 0.211 -41.9

1.205. 2sc5261ft.pdf Size:103K _toshiba

1.206. 2sc5720.pdf Size:156K _toshiba

(A) Collector-Emitter saturation voltage FE C DC current gain h Collector current I (A) C C P (mW) Collector current I (A) Collector power dissipation 2SC5720 RESTRICTIONS ON PRODUCT USE 000707EAA � TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buy

1.207. 2sc5589.pdf Size:298K _toshiba

1.208. 2sc5548.pdf Size:230K _toshiba

0.1 0.03 0.01 0.03 0.1 0.3 1 3 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) IC � VBE PC � Ta 2.0 20 (1) Tc = Ta Common emitter infinite heat sink VCE = 5 V (2) No heat sink 1.6 16 (1) 1.2 12 0.8 8 0.4 4 Tc = 100�C 25 -55 (2) 0 0 0 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 175 200 Base-emitter voltage VBE (V) Ambient temperature Ta (�C) 3 2002-07-23 FE C DC current gain h Collector current I (A) BE (sat) CE

1.209. 2sc5785.pdf Size:182K _toshiba

rent IC (A) Collector current IC (A) IC � VBE 2 Common emitter VCE = 2 V Single nonrepetitive pulse 1.6 1.2 0.8 Ta = 100�C 25 -55 0.4 0 0 0.4 0.8 1.2 1.6 Base-emitter voltage VBE (V) 3 2001-12-17 FE C DC current gain h Collector current I (A) BE (sat) CE (sat) V (V) V (V) Base-emitter saturation voltage Collector-emitter saturation voltage C Collector current I (A) 2SC5785 rth � tw 1000 100 10 Curves should be applied in thermal limit

1.210. 2sc5588.pdf Size:331K _toshiba

ified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). The

1.211. 2sc5107.pdf Size:241K _toshiba

ety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,�

1.212. 2sc5563.pdf Size:116K _toshiba

1.213. 2sc5376.pdf Size:260K _toshiba

oducts specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in

1.214. 2sc5319.pdf Size:169K _toshiba

2.003 90.5 0.239 24.9 0.686 -74.7 2100 0.593 -107.8 1.941 84.9 0.236 23.0 0.678 -76.7 2200 0.560 -112.4 1.864 86.0 0.240 22.5 0.666 -79.6 2300 0.564 -116.6 1.942 79.1 0.247 19.6 0.668 -81.8 2400 0.590 -119.3 1.753 81.6 0.239 16.5 0.656 -84.0 VCE = = 3 mA = 3 V, IC = = = = = f S11 S21 S12 S22 (MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. 800 0.634 -83.6 6.442 118.6 0.113 48.4 0.682 -56.4 900 0.606 -91.1 6.105 114.7 0.121 45.7 0.644 -59.7 1000 0.587 -96.3 5.681 110.0 0.126 42

1.215. 2sc5201.pdf Size:114K _toshiba

1.216. 2sc5550.pdf Size:208K _toshiba

1.217. 2sc5570.pdf Size:349K _toshiba

g ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the �Handling Guide for Semiconductor Devices,� or �TOSHIBA Semiconductor Reliability Handbook� etc.. � The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA pro

1.218. 2sc5684.pdf Size:126K _toshiba

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1.220. 2sc5122.pdf Size:171K _toshiba

1.221. 2sc5087.pdf Size:476K _toshiba

113.2 0.031 48.0 0.496 -59.6 400 0.650 -161.5 11.288 95.5 0.040 50.4 0.319 -74.1 600 0.660 -176.3 7.643 86.4 0.049 56.4 0.263 -83.5 800 0.666 172.8 5.758 79.6 0.059 60.0 0.242 -92.9 1000 0.667 164.0 4.605 74.2 0.070 63.6 0.233 -102.0 1200 0.668 156.8 3.809 69.3 0.080 65.9 0.229 -111.0 1400 0.677 148.4 3.277 65.1 0.091 68.2 0.226 -119.1 1600 0.676 141.1 2.862 61.2 0.104 70.0 0.223 -126.5 1800 0.688 133.9 2.559 57.5 0.117 71.2 0.220 -132.4 2000 0.690 126.7 2.303 54.1 0.131 72.4 0

1.222. 2sc5460.pdf Size:196K _toshiba

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92 129.8 0.048 52.1 0.717 -47.1 400 0.675 -130.5 10.431 106.5 0.063 41.8 0.486 -69.1 600 0.648 -154.8 7.298 93.5 0.070 40.8 0.379 -82.0 800 0.636 -170.9 5.547 84.4 0.076 42.0 0.324 -93.0 1000 0.630 176.7 4.423 77.5 0.083 44.7 0.291 -102.7 1200 0.634 166.4 3.660 71.7 0.089 47.7 0.266 -112.1 1400 0.634 157.1 3.125 67.0 0.097 50.8 0.249 -120.8 1600 0.639 148.8 2.741 62.4 0.105 53.2 0.233 -128.9 1800 0.645 139.9 2.451 58.8 0.115 55.6 0.220 -135.8 2000 0.642 131.4 2.233 54.9 0.126 5

1.224. 2sc5200.pdf Size:121K _toshiba

Collector-emitter voltage VCE (V) 3 2004-07-07 C C Collector current I (A) Collector current I (A) FE CE (sat) V (V) DC current gain h Collector-emitter saturation voltage C Collector current I (A) 2SC5200 RESTRICTIONS ON PRODUCT USE 030619EAA � The information contained herein is subject to change without notice. � The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infr

1.225. 2sc5258.pdf Size:103K _toshiba

1.226. ttc5200_en_datasheet_090713.pdf Size:190K _toshiba2

restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-07-13 TTC5200 hFE � IC IC � VCE 1000 16 Common emitter 400mA Tc = 25�C 300mA Single pulse test Tc = 100�C 200mA 12 100 25�C 150mA 8 100mA -55�C 10 60mA 4 40mA Common emitter VCE = 5 V IB =20mA Single pulse test 0 1 0 2 4 6 8 10 0.001 0.01 0.1 1 10 100 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) � IC VBE (sat) � IC

1.227. 2sc5300.pdf Size:98K _sanyo

Saturation Voltage VBE(sat) IC=16A, IB=4A 1.5 V Storage Time tstg IC=12A, IB1=2.4A, IB2=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=�4.8A 0.1 0.2 �s Switching Time Test Circuit No.5416�2/4 2SC5300 No.5416�3/4 2SC5300 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the

1.228. 2sc5416ls.pdf Size:43K _sanyo

VOUT 0.1 VOUT tstg tf I � V I � V C CE C BE 5 5 VCE=5V 4 4 3 3 2 2 1 1 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h � I V � I ( ) FE C CE sat C 100 10 VCE=5V IC/IB=5 7 7 5 5 3 2 3 1.0 2 7 25�C 5 10 3 2 7 5 0.1 7 3 5 3 2 2 1.0 0.01 7 2 3 5 7 2 3 5 7 2 3 5 7 7 2 3 5 7 2 3 5 7 2 3 5 7 0.01 0.1 1.0 0.01 0.1 1.0 Collector Current,IC � A Collector Current,IC

1.229. 2sc5452.pdf Size:42K _sanyo

5 V Storage Time tstg IC=12A, IB1=2.0A, IB2=�5.0A 3.0 �s Fall Time tf IC=12A, IB1=2.0A, IB2=�5.0A 0.2 �s Switching Time Test Circuit IB1 OUTPUT IB2 PW=20�s INPUT D.C.?1% RB RL=16.7? 50? VR + + 100�F 470�F VBE VCC=200V =-2V IC - VCE IC - VBE 20 20 VCE=5V 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V hFE - IC VCE(sat) - IC 100 10 V

1.230. 2sc5536.pdf Size:35K _sanyo

Current, IC � mA IT01305 IT01306 Cob -- VCB Cre -- VCB 5 5 f=1MHz f=1MHz 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT01307 IT01308 2 NF -- IC ? S21e? -- IC 32 12 f=150MHz f=150MHz 28 10 24 8 20 16 6 12 4 8 2 4 0 0 3 5 7 2 3 5 7 2 3 5 7 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, I

1.231. 2sc5374.pdf Size:122K _sanyo

74 �40.6 8.627 152.3 0.062 67.9 0.918 �23.4 200 0.785 �71.6 6.874 132.5 0.101 52.1 0.748 �41.7 400 0.651 �114.8 4.701 107.3 0.135 37.1 0.537 �57.6 600 0.613 �136.9 3.365 92.8 0.152 31.1 0.430 �65.6 800 0.581 �153.9 2.716 81.9 0.155 29.9 0.361 �74.3 1000 0.568 �164.2 2.218 73.4 0.161 30.0 0.326 �80.2 1200 0.556 �172.0 1.863 66.2 0.170 30.5 0.300 �86.1 1400 0.563 �178.1 1.626 59.6 0.177 32.7 0.297 �92.3 1600 0.558 175.4 1.473 53.9 0.185 35.4 0.306 �96.5 1800 0.560 168.9 1.345 48.1 0.196 3

1.232. 2sc5415.pdf Size:47K _sanyo

0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I f - I FE C T C 7 10 5 VCE=5V 7 3 2 5 2V VCE=5V 2V 100 3 7 5 2 3 2 10 1.0 3 5 7 2 3 5 7 2 3 5 7 2 3 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, IC � mA Cre - V Cob - V CB CB 10 10 f =1MHz f =1MHz 7 7 5 5 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0

1.233. 2sc5046.pdf Size:112K _sanyo

tf IC=8A, IB1=1.3A, IB2=�4A 0.1 0.2 �s Switching Time Test Circuit No.4784�2/4 2SC5046 No.4784�3/4 2SC5046 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

1.234. 2sc5226.pdf Size:112K _sanyo

rent, IC � mA Collector-to-Base Voltage, VCB � V Collector-to-Base Voltage, VCB � V Collector Current, IC � mA Collector Current, IC � mA Ambient Temperature, Ta � � C No.5032�2/5 � FE T DC Current Gain,h Gain Bandwidth Product, f GHz Output Capacitance, Cob � pF Reverse Transfer Capacitance, Cre � pF d 2 Noise Figure, NF � dB Forward Transfer Gain, ? S21e ? �B m C Collector Dissipation, P � W 2SC5226 S Parameters No.5032�3/5 2SC5226 S parameters (Common emitte

1.235. 2sc5778.pdf Size:30K _sanyo

Fall Time tf IC=7A, IB1=0.9A, IB2=--3.5A 0.2 �s Diode Forward Voltage VF IEC=12A 2.2 V Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=28.6? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 14 16 VCE=5V 14 12 12 10 10 8 8 6 6 4 4 0.1A 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V IT03523 Base-to-Emitter Voltage, VBE -- V IT03524 hFE -- IC VCE(sat) -- IC 100 10 I

1.236. 2sc5501.pdf Size:46K _sanyo

min typ max VCE=5V, IC=20mA, f=1GHz | S21e |2 1 10 13 dB Forward Transfer Gain VCE=2V, IC=3mA, f=1GHz | S21e |2 2 9 dB Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB hFE -- IC fT -- IC 3 2 VCE=5V VCE=5V 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 3 5 7 2 3 5 7 2 3 5 7 2 7 2 3 5 7 2 3 5 7 2 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, IC � mA IT00637 IT00638 Cob -- VCB Cre -- VCB 3 3 f=1MHz f=1MHz 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1

1.237. 2sc5297.pdf Size:100K _sanyo

IC=5A 47 Storage Time tstg IC=4A, IB1=0.8A, IB2=�1.6A 3.0 �s Fall Time tf IC=4A, IB1=0.8A, IB2=�1.6A 0.1 0.2 �s Switching Time Test Circuit No.5291�2/4 2SC5297 No.5291�3/4 2SC5297 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the cus

1.238. 2sa2013_2sc5566.pdf Size:57K _sanyo

Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF VCE(sat)1 IC=(--)1A, IB=(--)50mA (--105)85 (--180)130 mV Collector-to-Emitter Saturation Voltage VCE(sat)2 IC=(--)2A, IB=(--)100mA (--200)150 (--340)225 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100�A, RBE=0? (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)C

1.239. 2sc5669.pdf Size:33K _sanyo

(--)5V, IC=(--)7.5A 1.5 V Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)7.5A, IB=(--)0.75A (--0.3)0.2 (--)2.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)250 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=? (--)230 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V Turn-On Time ton See specified test circuit. (0.45)0.56 �s Storage Time tstg See specified test circuit. (1.75)3.3 �s Fall Time tf See specified test circ

1.240. 2sc5539.pdf Size:44K _sanyo

to-Emitter Voltage, VBE � V IT01418 IT01419 hFE -- IC fT -- IC 7 10 5 7 3 2 5 VCE=5V 100 2V 3 7 5 2 3 2 1.0 10 3 5 7 2 3 5 7 2 3 5 7 2 3 2 3 5 710 2 3 5 7 1.0 10 100 1.0 100 Collector Current, IC � mA Collector Current, IC � mA IT01420 IT01421 Cob -- VCB Cre -- VCB 10 10 f=1MHz f=1MHz 7 7 5 5 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 100 0.1 1.0 10 100 Collector-to-Base Voltage, VCB -- V Collect

1.241. 2sc5709.pdf Size:37K _sanyo

00mA 200 560 Gain-Bandwidth Product fT VCE=(--)2V, IC=(--)500mA (220)280 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (90)50 pF IC=(--)3A, IB=(--)60mA (--110)120 (--170)180 mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)4.5A, IB=(--)90mA (--160)180 (--240)280 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)3A, IB=(--)60mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0 (--)15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1m

1.242. 2sc5302.pdf Size:89K _sanyo

IC=12A, IB=3A 1.5 V Storage Time tstg IC=8A, IB1=1.6A, IB2=�3.2A 3.0 �s Fall Time tf IC=8A, IB1=1.6A, IB2=�3.2A 0.2 �s Switching Time Test Circuit Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V Collector Current, IC � A Collector Current, IC � A No.5363�2/4 � � C C Collector Current, I A Collector Current, I A FE CE (sat) DC Current Gain,h Collector�to�Emitter Saturation Voltage, V �V 2SC5302 R load R load Collector Current, IC � A Base Current, I

1.243. 2sc536n.pdf Size:40K _sanyo

to-Emitter Saturation Voltage VCE(sat) IC=(�)100mA, IB=(�)10mA (�)0.3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)100mA, IB=(�)10mA (�)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 (�)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(�)10�A, IC=0 (�)6 V IC -- VCE IC -- VCE --16 20 2SC536N 2SA608N 16 --12 12 --8 8 --4 4 IB=0 IB=0 0 0 0 --10 --20 --30 --40 --50 0 10 20 30 40

1.244. 2sc5774.pdf Size:29K _sanyo

E=(--)5A, IC=(--)5A 1.5 V Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (-- 0.3)0.2 (--)2.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)160 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=? (--)140 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V Turn-On Time ton See specified Test Circuit. (0.45)0.56 �s Storage Time tstg See specified Test Circuit. (1.75)3.3 �s Fall Time tf See specified Test Circui

1.245. 2sc5699.pdf Size:28K _sanyo

orage Time tstg IC=3A, IB1=0.6A, IB2=--1.2A 3.0 �s Fall Time tf IC=3A, IB1=0.6A, IB2=--1.2A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT VR RB RL=66.7? 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 8 9 VCE=5V 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V IT02576 Base-to-Emitter Voltage, VBE -- V IT02577 hFE -- IC VCE(sat) -- IC 7 5

1.246. 2sc5551a.pdf Size:287K _sanyo

s and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network D0209AB TK IM TC-00002042 No. A1118-1/4 2SC5551A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max hFE1 VCE=5V, IC=50mA 90 270 DC Current Gain hFE2 VCE=5V, IC=300mA 20 Gain-Bandwidth Product fT VCE=5V, IC=50mA 3

1.247. 2sc5275.pdf Size:136K _sanyo

ntinued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=10mA, f=1.5GHz 8 10 dB | S21e |2 2 VCE=1V, IC=1mA, f=1.5GHz 5.5 dB Noise Figure NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB No.5185�2/5 2SC5275 S Parameters No.5185�3/5 2SC5275 S parameters (Common emitter) VCE=5V, IC=5mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 200 0.725 �37.6 11.573 144.6

1.248. 2sc5226a.pdf Size:75K _sanyo

he described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001340 No. A1062-1/6 2SC5226A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Gain-Bandwidth P

1.249. 2sc5070.pdf Size:106K _sanyo

30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 15 V Turn-ON Time ton See specified Test Circuit 0.14 �s Strage Time tstg See specified Test Circuit 1.35 �s Fall Time tf See specified Test Circuit 0.1 �s Switching Time Test Circuit No.4473�2/4 2SC5070 No.4473�3/4 2SC5070 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and function

1.250. 2sc5808.pdf Size:30K _sanyo

tter Saturation Voltage VCE(sat) IC=1.2A, IB=0.24A 0.8 V Base-to-Emitter Saturation Voltage VBE(sat) IC=1.2A, IB=0.24A 1.5 V Collector-to-Base Breakdown Voltage V( IC=1mA, IE=0 700 V BR)CBO Collector-to-Emitter Breakdown Voltage V( IC=5mA, RBE=? 400 V BR)CEO Emitter-to-Base Breakdown Voltage V( IE=1mA, IC=0 8 V BR)EBO Turn-On Time ton VCC=200V, IC=1.5A, IB1=0.3A, 0.5 �s IB2=--0.6A, RL=133? VCC=200V, IC=1.5A, IB1=0.3A, Storage Time tstg 2.5 �s IB2=--0.6A, RL=133? VCC=200V, IC=1.5A,

1.251. 2sc5069.pdf Size:106K _sanyo

Collector-to-Base Breakdown Voltage V(BR)CBO IC=10�A, IE=0 30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 15 V Turn-ON Time ton See specified Test Circuit 0.14 �s Strage Time tstg See specified Test Circuit 1.35 �s Fall Time tf See specified Test Circuit 0.1 �s Switching Time Test Circuit No.4509�2/4 2SC5069 No.4509�3/4 2SC5069 Specifications of any and all SANYO products described or contained herei

1.252. 2sc5506.pdf Size:41K _sanyo

IC=12A, IB1=2.0A, IB2=�5.0A 3.0 �s Fall Time tf IC=12A, IB1=2.0A, IB2=�5.0A 0.2 �s Switching Time Test Circuit PW=20�s IB1 DC?1% IB2 OUTPUT INPUT RB RL=16.7? VR + + 50? 100�F 470�F VBE=�2V VCC=200V IC - VCE IC - VBE 20 20 VCE=5V 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V hFE - IC VCE(sat) - IC 100 10 VCE=5V IC/IB=5 7 7 5 5

1.253. 2sc5777.pdf Size:29K _sanyo

s Fall Time tf IC=5A, IB1=0.8A, IB2=--2.5A 0.2 �s Diode Forward Voltage VF IEC=8A 2.2 V Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=40? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 10 10 VCE=5V 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT03533 Base-to-Emitter Voltage, VBE -- V IT03534 hFE -- IC VCE(sat) -- IC 100 10 IC / IB=5

1.254. 2sc5299.pdf Size:94K _sanyo

VCE=5V, IC=8A 47 Storage Time tstg IC=6A, IB1=1.2A, IB2=�2.4A 3.0 �s Fall Time tf IC=6A, IB1=1.2A, IB2=�2.4A 0.1 0.2 �s Switching Time Test Circuit No.5293�2/4 2SC5299 No.5293�3/4 2SC5299 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in

1.255. 2sc5569.pdf Size:50K _sanyo

o.6309�1/5 2.5 4.25max 1.0 2SA2016/2SC5569 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max (�230) (�390) mV IC=(�)3.5A, IB=(�)175mA 160 240 mV Collector-to-Emitter Saturation Voltage VCE(sat) (�240) (�400) mV IC=(�)2A, IB=(�)40mA 110 170 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)2A, IB=(�)40mA (�)0.83 (�)1.2 V (�50) V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO

1.256. 2sc5304.pdf Size:36K _sanyo

urrent, IC � A No.5883-2/3 � � C C Collector Current, I A Collector Current, I A FE CE (sat) DC Current Gain,h Collector�to�Emitter Saturation Voltage, V �V CE (sat) Switching Time, SW Time � � s Base�to�Emitter Saturation Voltage, V �V 1.4A 1.6A 1.8A 2.0A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A C � C C � � 0 120 25 = �4 a T C � Ta=120 C � C � 25 C 120 � C � � = 40 25 Ta C � 40 � t stg t f C � 25 C � 120 2SC5304 SW Time - I B

1.257. 2sc5416.pdf Size:45K _sanyo

No.5696-2/4 C C Collector Current, I � A Collector Current, I � A CE(sat) FE DC Current Gain, h Collector-to-Emitter Saturation Voltage, V � V BE(sat) Switching Time, SW Time � � s Base-to-Emitter Saturation Voltage, V � V A 4 . 1 A 0 A 2 . . 1 2 A 0 . 1 A 6 . 1 A 8 . 1 A 8 . 0 A 6 . 0 A 4 . 0 A 2 . 0 A 1 . 0 C � 0 A 5 0 C . 0 2 � 1 5 C = 2 � a 0 T 4 � C � 0 2 1 = a T C � 0 C � 2 C � 5 2 0 1

1.258. 2sc5534.pdf Size:44K _sanyo

100 Collector Current, IC � mA Collector Current, IC � mA IT00579 IT00580 Cob -- VCB Cre -- VCB 10 10 f=1MHz f=1MHz 7 7 5 5 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 2 3 5 7 2 3 5 7100 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.1 1.0 10 100 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT00581 IT00582 2 2 ? S21e? -- IC ? S21e? -- IC 16 16 f=1GHz f=2GHz 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2

1.259. 2sc5690.pdf Size:28K _sanyo

Conditions Unit min typ max Diode Forward Voltage VF IEC=12A 2 V Storage Time tstg IC=7A, IB1=1.4A, IB2=--2.8A 3.0 �s Fall Time tf IC=7A, IB1=1.4A, IB2=--2.8A 0.2 �s Switching Time Test Circuit PW=20�s IB1 D.C.?1% OUTPUT IB2 INPUT RB RL=28.6? VR ++ 50? 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE(ON) 12 12 VCE=5V 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V IT02890 Base-to-Emitter V

1.260. 2sc5565.pdf Size:49K _sanyo

ax 1.0 2.5 2SA2012/2SC5565 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max (�140) (�210) mV IC=(�)1.5A, IB=(�)30mA Collector-to-Emitter Saturation Voltage VCE(sat) 125 190 mV IC=(�)2.5A, IB=(�)125mA (�)170 (�)260 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)1.5A, IB=(�)30mA (�)0.83 (�)1.2 V (�30) V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)30 V

1.261. 2sc5375.pdf Size:122K _sanyo

100 0.875 �40.1 8.529 152.1 0.062 67.4 0.905 �24.3 200 0.782 �70.7 6.673 131.8 0.101 51.6 0.745 �42.0 400 0.621 �115.9 4.733 104.7 0.135 37.2 0.524 �59.1 600 0.576 �138.2 3.353 90.2 0.143 33.3 0.387 �71.5 800 0.547 �155.7 2.686 79.1 0.151 33.0 0.329 �79.4 1000 0.542 �165.4 2.165 70.4 0.165 31.2 0.330 �80.5 1200 0.534 �174.7 1.873 62.4 0.173 33.0 0.310 �86.0 1400 0.529 178.3 1.638 55.7 0.184 35.1 0.295 �91.9 1600 0.529 170.8 1.480 49.7 0.194 35.6 0.308 �95.7 1800 0.533 165.4 1.321 43.4 0

1.262. 2sc5414.pdf Size:47K _sanyo

-Emitter Voltage, VBE � V h - I f - I FE C T C 7 10 5 VCE=5V 7 3 2V 2 5 VCE=5V 2V 100 3 7 5 2 3 2 10 1.0 3 5 7 2 3 5 7 2 3 5 7 2 3 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, IC � mA Cre - V Cob - V CB CB 10 10 f =1MHz f =1MHz 7 7 5 5 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V 2

1.263. 2sc5578.pdf Size:40K _sanyo

Storage Time tstg IC=9A, IB1=1.5A, IB2=�3.75A 3.0 �s Fall Time tf IC=9A, IB1=1.5A, IB2=�3.75A 0.2 �s Switching Time Test Circuit IB1 PW=20� s IB2 D.C.?1% OUTPUT INPUT RB RL=22.2? VR + + 50? 100� F 470� F VBE=�2V VCC=200V IC -- VCE IC -- VBE 16 14 VCE=5V 14 12 1.2A 1.0A 12 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT00811 IT00812 hFE -- IC VCE(sat

1.264. 2sc5541.pdf Size:44K _sanyo

C � mA Collector Current, IC � mA IT01427 IT01428 Cob -- VCB Cre -- VCB 1.0 1.0 f=1MHz f=1MHz 7 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 100 0.1 1.0 10 100 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT01429 IT01430 2 2 ? S21e? -- IC ? S21e? -- IC 16 16 f=1GHz f=2GHz 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 1.0 0.1 10 100 0.1 1.0 10 100 Collector C

1.265. 2sc5490.pdf Size:39K _sanyo

IC=10mA, f=1.5GHz | S21e |2 1 8 10 dB Forward Transfer Gain VCE=1V, IC=1mA, f=1.5GHz | S21e |2 2 5.5 dB NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB Noise Figure NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB hFE -- IC fT -- IC 5 3 VCE=5V f=1GHz 2 3 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 0.1 1.0 10 100 0.1 1.0 10 Collector Current, IC � mA Collector Current, IC � mA IT01377 IT01378 Cre -- VCB Cob -- VCB 5 5 f=1MHz f=1MHz 3 3 2

1.266. 2sc5681.pdf Size:28K _sanyo

C=10.8A, IB=2.7A 1.5 V Storage Time tstg IC=7A, IB1=1.4A, IB2=--2.8A 3.0 �s Fall Time tf IC=7A, IB1=1.4A, IB2=--2.8A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=28.6? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 14 12 VCE=5V 12 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V IT02391 Base-to-Emitter Voltage, VBE -- V IT02392 hFE -- IC VC

1.267. 2sc5689.pdf Size:29K _sanyo

aturation Voltage VBE(sat) IC=7.2A, IB=1.8A 1.5 V Diode Forward Voltage VF IEC=8A 2.0 V Storage Time tstg IC=5A, IB1=1A, IB2=--2A 3.0 �s Fall Time tf IC=5A, IB1=1A, IB2=--2A 0.1 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=40? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 10 12 VCE=5V 9 10 8 7 8 6 5 6 4 4 3 2 2 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V I

1.268. 2sc5888.pdf Size:42K _sanyo

Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)250mA (--250)180 (--500)360 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)5A, IB=(--)250mA (--)0.93 (--)1.4 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)100�A, IE=0 (--50)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)100�A, IC=0 (--)6 V Turn-ON Time ton See specified Test Circuit. (70)40 ns Storage Time tstg See specified T

1.269. 2sc5831.pdf Size:32K _sanyo

r-to-Emitter Saturation Voltage VCE(sat) IC=1A, IB=4mA 1.0 1.5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=4mA 2.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=100�A, IE=0 55 65 75 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 55 65 75 V Turn-ON Time ton See specified Test Circuit. 0.2 �s Storage Time tstg See specified Test Circuit. 3.5 �s Fall Time tf See specified Test Circuit. 0.5 �s Switching Time Test Circuit Es / b Test Circuit PW=50�s, Duty Cycl

1.270. 2sc5277.pdf Size:134K _sanyo

(KT)/83095YK (KOTO) TA-0413 No.5187�1/5 0.8 0.4 1.6 0.4 0.1max 2SC5277 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=10mA, f=1.5GHz 8 10 dB | S21e |2 2 VCE=1V, IC=1mA, f=1.5GHz 5.5 dB Noise Figure NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB No.5187�2/5 2SC5277 S Parameters No.5187�3/5 2SC5277 S parameters (Common emitter) VCE=5V, IC=5mA, ZO=50? Freq (MHz) | S

1.271. 2sc5488a.pdf Size:57K _sanyo

of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408AB TI IM TC-0000138

1.272. 2sc5227a.pdf Size:75K _sanyo

he described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001342 No. A1063-1/6 2SC5227A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Gain-Bandwidth P

1.273. 2sc5264.pdf Size:463K _sanyo

me tf IC=2.5A, IB1=0.5A, IB2=�1.0A 0.15 �s Switching Time Test Circuit lB1 RC lB2 lB1 VOUT 0.9VOUT VCC VOUT lB2 0.1VOUT tstg tf I � V h � I C CE FE C 8 100 V =5V CE 7 5 6 3 2 4 1.0 7 2 5 3 I =0 B 0 2 0 7 0 2 4 6 8 10 3 5 0.1 2 3 5 7 1.0 2 3 5 7 Collector-to-Emitter Voltage, VCE � V Collector Current, IC � A V � I I � V CE(sat) C C BE 7 6 V =5V CE 5 5 3 2 4 1.0 7 3 5 3 2 2 Ta=�40�C 1 0.1 7 120�C 25�C I /I =5 C B 5 0 3 5 0.1 2 3 5 7 1.0

1.274. 2sc5296.pdf Size:99K _sanyo

DC Current Gain hFE2 VCE=5V, IC=5A 47 Storage Time tstg IC=4A, IB1=0.8A, IB2=�1.6A 3.0 �s Fall Time tf IC=4A, IB1=0.8A, IB2=�1.6A 0.1 0.2 �s Switching Time Test Circuit No.5290�2/4 2SC5296 No.5290�3/4 2SC5296 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described p

1.275. 2sc5899.pdf Size:29K _sanyo

Time tstg IC=7A, IB1=0.9A, IB2=--3.6A 3.0 �s Fall Time tf IC=7A, IB1=0.9A, IB2=--3.6A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT VR RB RL=28.6? 50? + + 100�F 470�F VBE= --5V VCC=200V IC -- VCE IC -- VBE 12 16 VCE=5V 11 14 10 9 12 8 10 7 6 8 5 6 4 3 4 2 2 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT06263 Base-to-Emitter Voltage, VBE -- V IT06264 hFE -- IC VCE(sat) -- IC 100

1.276. 2sc5776.pdf Size:29K _sanyo

l Time tf IC=3A, IB1=0.5A, IB2=--1.5A 0.2 �s Diode Forward Voltage VF IEC=6.5A 2.2 V Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=66.7? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 9 9 VCE=5V 8 8 7 7 6 6 5 5 4 4 0.4A 3 3 0.2A 2 2 0.1A 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT03553 Base-to-Emitter Voltage, VBE -- V IT03554 hFE -- IC VCE(sat) -- IC 5 10 IC /

1.277. 2sa2125_2sc5964.pdf Size:59K _sanyo

=(--)2A, IB=(--)100mA (--250)190 (--500)290 mV Base-to-Emitterr Saturation Voltage VBE(sat) VCE=(--)2V, IB=(--)100mA (--)0.94 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0 (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100�A, RBE=0 (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10�A, IC=0 (--)6 V Turn-On Time ton See specified test circuit. (30)35 ns Sto

1.278. 2sc5045.pdf Size:108K _sanyo

2=�4.0A 2.0 �s Fall Time tf IC=8A, IB1=1.3A, IB2=�4.0A 0.1 0.2 �s Switching Time Test Circuit No.4783�2/4 2SC5045 No.4783�3/4 2SC5045 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify sympto

1.279. 2sa2040_2sc5707.pdf Size:58K _sanyo

to-Emitter Saturation Voltage VCE(sat)2 IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100�A, RBE=0? (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10�A, IC=0A (--)6 V Turn-On Time ton

1.280. 2sc5291.pdf Size:27K _sanyo

Time tstg See specified Test Circuit 1.2 �s Fall Time tf See specified Test Circuit 8.0 ns * : The 2SC5291 is classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 OUTPUT IB2 INPUT RB RL PW=20�s VR 50? D.C.=?1% + + 100�F 470�F VBE= --5V VCC=100V 10IB1=--10IB2=IC=700mA RL=140?, RB=14? at IC=700mA IC -- VCE IC -- VCE 1.8 1.0 1.6 0.8 1.4 1.2 0.6 1.0 0.8 0.4 0.6 0.4 0.2 1mA 0.5mA 0.2 IB=0 IB=0 0 0

1.281. 2sc5698.pdf Size:29K _sanyo

n hFE2 VCE=5V, IC=5A 4 7 Diode Forward Voltage VF IEC=6.5A 2 V Storage Time tstg IC=3A, IB1=0.6A, IB2=--1.2A 3.0 �s Fall Time tf IC=3A, IB1=0.6A, IB2=--1.2A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT VR RB RL 66.7? 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 8 9 VCE=5V 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE -- V IT02567 Base-t

1.282. 2sc5710.pdf Size:37K _sanyo

-)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (290)320 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (52)40 pF IC=(--)4A, IB=(--)200mA (--200)180 (--340)270 mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2.5A, IB=(--)50mA (--170)130 (--290)195 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2.5A, IB=(--)50mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0 (--30)40 V Collector-to-Emitter Breakdown Voltage V(BR)CEO

1.283. 2sc5227.pdf Size:127K _sanyo

034�3/5 2SC5227 S parameters (Common emitter) VCE=5V, IC=7mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.722 �41.6 17.352 148.7 0.029 70.9 0.883 �21.3 200 0.587 �73.2 13.419 127.6 0.046 60.8 0.710 �33.1 400 0.426 �113.0 8.371 105.1 0.067 56.9 0.507 �40.7 600 0.369 �136.6 5.914 92.7 0.084 58.4 0.423 �42.5 800 0.344 �152.9 4.593 83.9 0.102 60.3 0.382 �43.9 1000 0.334 �165.7 3.750 76.7 0.121 61.5 0.360 �46.3 1200 0.326 �177.9 3.178 70.3 0.141 62.0 0.

1.284. 2sc5503.pdf Size:45K _sanyo

ain | S21e |2 12 15 dB Noise Figure NF VCE=5V, IC=5mA, f=1GHz 1.2 2.5 dB hFE -- IC fT -- IC 5 2 VCE=5V VCE=5V 3 10 2 7 100 5 7 5 3 3 2 2 1.0 10 7 7 5 5 3 3 3 5 7 2 3 5 7 2 3 5 7 2 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, IC � mA IT00644 IT00645 Cob -- VCB Cre -- VCB 5 5 f=1MHz f=1MHz 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 5 5 7 2 3 5 7 2 3 5 7 2 3 5 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.1 1.0 10 100

1.285. 2sc5229.pdf Size:134K _sanyo

om preceding page. Ratings Parameter Symbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=20mA, f=1GHz 8 10.5 dB | S21e |2 2 VCE=8V, IC=40mA, f=1GHz 11 dB Noise Figure NF1 VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB NF2 VCE=8V, IC=40mA, f=1GHz 1.7 dB No.5045�2/5 2SC5229 S Parameters No.5045�3/5 2SC5229 S parameters (Common emitter) VCE=5V, IC=7mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.682 �44.8 16.999 143.0 0.032 69.4 0

1.286. 2sc5155.pdf Size:115K _sanyo

or-to-Emitter Saturation Voltage VCE(sat) IC=2A, IB=20mA 0.15 0.5 V Base-to-Emitter Saturation Voltage VBE(sat) IC=2A, IB=20mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10�A, IE=0 50 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 20 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 15 V Turn-ON Time ton See specified Test Circuit 0.14 �s Storage Time tstg See specified Test Circuit 1.5 �s Fall Time tf See specified Test Circuit 0.12 �s Switching

1.287. 2sc5231.pdf Size:132K _sanyo

ymbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=20mA, f=1GHz 9 12 dB | S21e |2 2 VCE=2V, IC=3mA, f=1GHz 8.5 dB Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB No.5036�2/5 2SC5231 S Parameters No.5036�3/5 2SC5231 S parameters (Common emitter) VCE=5V, IC=7mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.786 �40.7 17.507 151.3 0.028 70.1 0.898 �20.4 200 0.677 �72.4 13.998 131.4 0.046 58.0 0.739 �33.4 400 0.546 �112

1.288. 2sc5639.pdf Size:42K _sanyo

16A, IB=4A 1.5 V Storage Time tstg IC=12A, IB1=2.4A, IB2=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=�4.8A 0.1 0.2 �s Switching Time Test Circuit PW=20� s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=16.7? VR + + 50? 100� F 470�F VBE=--2V VCC=200V IC -- VCE IC -- VBE 20 22 VCE=5V 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V

1.289. 2sc5301.pdf Size:96K _sanyo

tion Voltage VBE(sat) IC=16A, IB=4A 1.5 V Storage Time tstg IC=12A, IB1=2.4A, IB2=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=�4.8A 0.1 0.2 �s Switching Time Test Circuit No.5417�2/4 2SC5301 No.5417�3/4 2SC5301 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the descri

1.290. 2sc5540.pdf Size:30K _sanyo

tor Current, IC � mA IT01321 IT01322 Cob -- VCB Cre -- VCB 5 5 f=1MHz f=1MHz 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 5 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT01323 IT01324 2 NF -- IC ? S21e? -- IC 16 10 VCE=5V VCE=5V f=1GHz f=1GHz 14 8 12 10 6 8 4 6 4 2 2 0 0 2 3 5 7 2 3 5 7 2 3 5 5 71.0 2 3 5 7 2 3 1.0 10 10 Collector Current, IC � mA

1.291. 2sc5245a.pdf Size:270K _sanyo

ent. www.semiconductor-sanyo.com/network http://semicon.sanyo.com/en/network O2908AB MS IM TC-00001685 No. A1074-1/6 2SC5245A Electrical Characteristics at Ta=25�C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=10mA 60* 270* fT1 VCE=5V, IC=10mA 5 8 GHz Gain-Bandwidth Product fT2 VCE=1V, IC=1mA 3.5 GHz Output Capacitance Cob VCB=10V, f=1MHz 0.45

1.292. 2sc5476.pdf Size:40K _sanyo

TOKYO, 110-8534 JAPAN 40199TS (KOTO) TA-1387 No.6069�1/4 3.5 7.2 18.1 5.6 14.0 16.0 2.4 2SC5476 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=0.1mA, IE=0 85 95 105 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 85 95 105 V Inductive Load Voltage Es/b L=100mH, RBE=100? 15 mJ Es/b Test Circuit L +VCC TUT SW IB RBE 6k? 200? VCC=20V RBE=100? Tc=25�C IC - VCE IC - VBE

1.293. 2sc5706.pdf Size:40K _sanyo

off Current IEBO VEB=(--)4V, IC=0 (--)1 �A DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (360)400 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF IC=(--)1A, IB=(--)50mA (--115)90 (--195)135 mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)100mA (--255)160 (--430)240 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO I

1.294. 2sc5231a.pdf Size:279K _sanyo

are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51408AB TI IM TC-00001355 No. A1077-1/6 2

1.295. 2sc5453.pdf Size:41K _sanyo

me tstg IC=15A, IB1=2.5A, IB2=�6.25A 3.0 �s Fall Time tf IC=15A, IB1=2.5A, IB2=�6.25A 0.2 �s Switching Time Test Circuit PW=20�s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=13.3? VR + + 50? 100�F 470�F VBE=�2V VCC=200V I - V I - V C CE C BE 25 30 VCE=5V 25 20 20 15 15 10 10 5 5 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I V - I ( ) FE C CE sat C 100 10 VCE=5V IC/IB=5 7 7

1.296. 2sc5502.pdf Size:48K _sanyo

Figure NF VCE=5V, IC=7mA, f=1GHz 1.1 2.0 dB IC -- VCE IC -- VBE 100 50 40 80 30 60 40 20 0.10mA 20 10 0.05mA IB=0 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT00651 IT00652 hFE -- IC fT -- IC 10 7 5 7 2V 3 2 5 VCE=5V 100 2V 3 7 5 2 3 2 10 1.0 2 3 5 7 3 5 7 2 3 5 7 2 3 5 7 2 3 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC � mA Collector Current, IC � mA IT00653 IT00654 Cob -- VCB

1.297. 2sc5276.pdf Size:136K _sanyo

.5 0.5 0.8 1.1 2SC5276 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=10mA, f=1.5GHz 9 11 dB | S21e |2 2 VCE=1V, IC=1mA, f=1.5GHz 6 dB Noise Figure NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB No.5186�2/5 2SC5276 S Parameters No.5186�3/5 2SC5276 S parameters (Common emitter) VCE=5V, IC=5mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22

1.298. 2sc5047.pdf Size:108K _sanyo

ll Time tf IC=12A, IB1=2A, IB2=�6A 0.1 0.2 �s Switching Time Test Circuit No.4785�2/4 2SC5047 No.4785�3/4 2SC5047 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that ca

1.299. 2sc5791.pdf Size:31K _sanyo

ime tstg IC=5A, IB1=0.8A, IB2=--2.5A 3.0 �s Fall Time tf IC=5A, IB1=0.8A, IB2=--2.5A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=40? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 10 10 VCE=5V 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT03543 Base-to-Emitter Voltage, VBE -- V IT03544 hFE -- IC VCE(sat) -- IC 100 10 IC / IB=

1.300. 2sc5450.pdf Size:40K _sanyo

7A 47 Storage Time tstg IC=6A, IB1=1.0A, IB2=�2.5A 3.0 �s Fall Time tf IC=6A, IB1=1.0A, IB2=�2.5A 0.2 �s Switching Time Test Circuit PW=20�s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=33.3? VR + + 50? 100�F 470�F VBE=�2V VCC=200V I - V I - V C CE C BE 10 10 VCE=5V 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I V - I ( ) FE C CE sat C 10

1.301. 2sc5763.pdf Size:30K _sanyo

T VCE=10V, IC=0.8A 17 MHz Output Capacitance Cob VCB=10V, f=1MHz 80 pF Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 700 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=? 400 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 8 V Turn-On Time ton IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 0.5 �s Storage Time tstg IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 2.5 �s Fall Time tf IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 0.25 �s Switching Time Test Circuit IB1

1.302. 2sc5637.pdf Size:42K _sanyo

E=5V, IC=8A 47 Storage Time tstg IC=6A, IB1=1.2A, IB2=�2.4A 3.0 �s Fall Time tf IC=6A, IB1=1.2A, IB2=�2.4A 0.1 0.2 �s Switching Time Test Circuit PW=20� s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=33.3? VR + + 50? 100� F 470�F VBE=--2V VCC=200V IC -- VCE IC -- VBE 10 11 VCE=5V 10 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT01753 IT0175

1.303. 2sc5607.pdf Size:30K _sanyo

tor-to-Base Breakdown Voltage V(BR)CBO IC=10�A, IE=0 15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 10 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 7 V Turn-On Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 210 ns Fall Time tf See specified Test Circuit. 11 ns Switching Time Test Circuit PW=20�s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL VR + + 50? 220�F 470�F VBE= --5V VCC=5V 20IB1= --20IB2= IC=1.5A IC -- V

1.304. 2sc5443.pdf Size:42K _sanyo

age Time tstg IC=12A, IB1=2.4A, IB2=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=�4.8A 0.2 �s Switching Time Test Circuit PW=20�s D.C.?1% IB1 IB2 OUTPUT INPUT RB VR RL=16.7? 50? + + 100�F 470�F 200 VBE=-2V VCC= V IC - VCE IC - VBE 20 22 VCE=5V 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4.5A 4.0A 3.5A 4 4 2 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V hFE - IC VC

1.305. 2sc5277a.pdf Size:58K _sanyo

always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2908AB MS IM TC-00001687 No. A1075-1/6 2SC5277A Electrical Characteristics at Ta=25�C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=10mA 60* 270* fT1 VCE=5V, IC=10mA 5 8 GHz Gain-Bandwidth Product fT2 VCE=1V, IC=1mA 3.5 GHz Ou

1.306. 2sc5298.pdf Size:95K _sanyo

15 25 DC Current Gain hFE2 VCE=5V, IC=8A 47 Storage Time tstg IC=6A, IB1=1.2A, IB2=�2.4A 3.0 �s Fall Time tf IC=6A, IB1=1.2A, IB2=�2.4A 0.1 0.2 �s Switching Time Test Circuit No.5292�2/4 2SC5298 No.5292�3/4 2SC5298 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the desc

1.307. 2sc5417ls.pdf Size:43K _sanyo

IB2 VOUT 0.1 VOUT tstg tf I � V I � V C CE C BE 5 4 VCE=5V 4 3 3 2 2 1 0.05A 1 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, V � V Base-to-Emitter Voltage, V � V CE BE h � I V � I ( ) FE C CE sat C 10 100 VCE=5V IC/IB=5 7 7 5 5 3 2 3 1.0 2 7 5 25�C 10 3 2 7 5 0.1 7 3 5 3 2 2 1.0 0.01 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 0.01 0.1 1.0 0.01 0.1 1.0 Collector Current,I � A Collector C

1.308. 2sc5696.pdf Size:29K _sanyo

Gain hFE2 VCE=5V, IC=8A 4 7 Fall Time tf IC=6A, IB1=1.2A, IB2=--2.4A 0.3 �s Storage Time tstg IC=6A, IB1=1.2A, IB2=--2.4A 2.0 �s Diode Forward Voltage VF IEC=10A 2.2 V Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT VR RB RL 33.3? 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 10 12 VCE=5V 9 10 8 7 8 6 5 6 4 4 3 0.2A 2 2 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02492 B

1.309. 2sc5489.pdf Size:31K _sanyo

IT01371 Cre -- VCB Cob -- VCB 5 5 f=1MHz f=1MHz 3 3 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT01372 IT01373 2 NF -- IC ? S21e? -- IC 16 10 VCE=5V VCE=5V f=1GHz f=1GHz 14 8 12 10 6 8 4 6 4 2 2 0 0 5 7 2 3 5 7 2 3 5 7 7 2 3 5 710 2 3 5 1.0 10 1.0 Collector Current, IC � mA Collector Current, IC � mA IT01374 IT01375 PC --

1.310. 2sc5414a.pdf Size:48K _sanyo

omer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002103 No. A1081-1/6 2SC5414A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Gain-Bandwidth Product fT VCE=5V, IC=30mA 5 6.7 GHz Output Capacitance Cob VCB=5V, f=1MHz 1.0 1.5 pF Re

1.311. 2sc5537.pdf Size:32K _sanyo

0.1 1.0 10 1.0 Collector Current, IC � mA Collector Current, IC � mA IT01386 IT01387 2 Cob -- VCB ? S21e? -- IC 1.0 14 f=1GHz f=1MHz 12 7 10 5 8 3 6 2 4 2 0.1 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 100 1.0 Collector Current, IC � mA Collector-to-Base Voltage, VCB -- V IT01388 IT01389 2 NF -- IC ? S21e? , NF -- VCE 10 14 f=1GHz f=1GHz 12 IC=3mA 8 10 2 ? S21e? 6 8 1mA 6 4 4 VCE=1V NF IC=1mA 2 2 3mA 0 0 2 3 5 7 2 3 5 710 2 0 1 2 3 4 5

1.312. 2sc5577.pdf Size:40K _sanyo

=3A 1.5 V Storage Time tstg IC=8A, IB1=1.6A 3.0 �s Fall Time tf IB2=�3.2A 0.2 �s Switching Time Test Circuit IB1 PW=20� s IB2 D.C.?1% OUTPUT INPUT RB RL=25? VR + + 50? 100� F 470� F VBE=�2V VCC=200V IC -- VCE IC -- VBE 16 14 VCE=5V 1.8A 1.6A 1.4A 1.2A 14 12 12 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT00801 IT00802 hFE -- IC VCE(sat) -

1.313. 2sc5683.pdf Size:28K _sanyo

) IC=18A, IB=4.5A 1.5 V Storage Time tstg IC=12A, IB1=2.4A, IB2=--4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=--4.8A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=16.7? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 40 12 VCE=5V 35 10 30 8 25 20 6 15 4 10 0.5A 2 5 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02409 Base-to-Emitter Voltage, VBE -- V IT02410 h

1.314. 2sa2039_2sc5706.pdf Size:61K _sanyo

itter Saturation Voltage VCE(sat)2 IC=(--)2A, IB=(--)100mA (--255)160 (--430)240 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)100mA (--)0.89 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100�A, RBE=0? (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10�A, IC=0A (--)6 V Turn-On Time ton Se

1.315. 2sc5538.pdf Size:36K _sanyo

ollector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT01312 IT01313 hFE -- IC fT -- IC 7 2 VCE=3V VCE=3V f=1GHz 5 10 3 7 5 2 3 100 2 7 1.0 5 7 3 5 3 5 7 2 3 5 7 2 3 5 7 2 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 Collector Current, IC � mA Collector Current, IC � mA IT01314 IT01315 Cob -- VCB Cre -- VCB 3 3 f=1MHz f=1MHz 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base

1.316. 2sc5567.pdf Size:49K _sanyo

98 No.6321�1/5 2.5 4.25max 1.0 2SA2014/2SC5567 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max (�110) (�170) mV IC=(�)3A, IB=(�)60mA 120 180 mV Collector-to-Emitter Saturation Voltage VCE(sat) (�160) (�240) mV IC=(�)4.5A, IB=(�)90mA 180 280 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)3A, IB=(�)60mA (�)0.85 (�)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 (�)15 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=

1.317. 2sc5043.pdf Size:106K _sanyo

IB1=1.0A, IB2=�3.0A 2.0 �s Fall Time tf IC=6A, IB1=1.0A, IB2=�3.0A 0.1 0.2 �s Switching Time Test Circuit No.4781�2/4 2SC5043 No.4781�3/4 2SC5043 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To

1.318. 2sc5680.pdf Size:28K _sanyo

IC=7.2A, IB=1.8A 1.5 V Storage Time tstg IC=5A, IB1=1A, IB2=--2A 3.0 �s Fall Time tf IC=5A, IB1=1A, IB2=--2A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=40? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 10 12 VCE=5V 9 10 8 7 8 6 5 6 4 4 3 2 2 1 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02377 Base-to-Emitter Voltage, VBE -- V IT02378 hFE -- IC VCE(sat) -

1.319. 2sc5611.pdf Size:41K _sanyo

ts described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13100TS (KOTO) TA-2336 No.6336�1/4 1.4 11.0 7.5 1.5 3.0 15.5 1.7 2SA2023/2SC5611 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)1mA, IE=0 (�)80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)60 V Emitter-to-Base

1.320. 2sc5707.pdf Size:37K _sanyo

f Current IEBO VEB=(--)4V, IC=0 (--)0.1 �A DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (290)330 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO

1.321. 2sc5994.pdf Size:254K _sanyo

o-Base Breakdown Voltage V(BR)CBO IC=10�A, IE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100�A, RBE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 6 V Turn-ON Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 330 ns Fall Time tf See specified Test Circuit. 40 ns Package Dimensions Switching Time Test Circuit unit : mm IB1 2038B PW=20�s OUTPUT D.

1.322. 2sc5264ls.pdf Size:42K _sanyo

0A 2.5 �s Fall Time tf IC=2.5A, IB1=0.5A, IB2=�1.0A 0.15 �s Switching Time Test Circuit RC IB1 IB2 IB1 VOUT 0.9VOUT IB2 VCC VOUT 0.1VOUT tstg tf IC -- VCE IC -- VBE 8 6 VCE=5V 5 6 4 4 3 2 2 1 IB=0 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT03884 IT03885 hFE -- IC VCE(sat) -- IC 100 7 VCE=5V IC / IB=5 5 7 5 3 2 3 1.0 2 7 5 10 3 7 2 5 Ta= --40�C 0.1 3 7 25�C 2 5 3 5 7 2

1.323. 2sc5415a.pdf Size:92K _sanyo

, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 93009AB TK IM TC-00002100 No. A1080-1/6 2SC5415A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Gain-Bandwidth Product fT VCE=5V, IC=30

1.324. 2sc5566.pdf Size:50K _sanyo

.6307�1/5 4.25max 1.0 2.5 2SA2013/2SC5566 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max (�105) (�180) mV IC=(�)1A, IB=(�)50mA 85 130 mV Collector-to-Emitter Saturation Voltage VCE(sat) (�200) (�340) mV IC=(�)2A, IB=(�)100mA 150 225 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)2A, IB=(�)100mA (�)0.89 (�)1.2 V (�50) V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC

1.325. 2sc5645.pdf Size:32K _sanyo

0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02250 Base-to-Emitter Voltage, VBE -- V IT02251 hFE -- IC fT -- IC 1000 100 7 7 5 5 3 3 2 2 100 10 1V 7 7 5 5 3 3 2 2 10 1.0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC -- mA IT02252 Collector Current, IC -- mA IT02253 Cob -- VCB Cre -- VCB 1.0 1.0 f=1MHz f=1MHz 7 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Vol

1.326. 2sc5647.pdf Size:36K _sanyo

e?22 VCE=3V, IC=7mA, f=2GHz Noise Figure NF VCE=1V, IC=3mA, f=2GHz 2.6 3.5 dB IC -- VCE IC -- VBE 10 20 18 8 16 14 6 12 10 4 8 6 2 4 2 IB=0 0 0 0 1.0 2.0 3.0 4.0 5.0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT05344 Base-to-Emitter Voltage, VBE -- V IT05345 hFE -- IC fT -- IC 3 3 2 2 VCE=3V 10 100 7 7 5 5 3 3 2 3 5 7 2 3 5 7 2 3 2 3 5 710 2 3 1.0 10 1.0 Collector Current, IC -- mA IT05346 IT05347 Collector Current, IC -- mA Cob -- VCB Cre

1.327. 2sc5504.pdf Size:48K _sanyo

0.425 0.9 0.7 2SC5504 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max VCE=5V, IC=10mA, f=1.5GHz | S21e |2 1 9 11 dB Forward Transfer Gain VCE=1V, IC=1mA, f=1.5GHz | S21e |2 2 6 dB NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB Noise Figure NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB hFE -- IC fT -- IC 3 5 VCE=5V f=1GHz 2 3 2 10 100 7 7 5 5 3 3 2 2 1.0 10 7 7 5 5 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 0.1 1.0 10 100 0.1 1.0 10 Col

1.328. 2sc5230.pdf Size:128K _sanyo

parameters (Common emitter) VCE=5V, IC=7mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.706 �39.4 16.564 141.8 0.029 70.7 0.866 �22.2 200 0.504 �65.6 12.172 117.3 0.048 62.0 0.699 �32.9 400 0.272 �98.9 7.268 90.7 0.076 56.7 0.535 �40.9 600 0.167 �127.5 5.116 73.6 0.105 52.5 0.470 �46.9 800 0.116 �167.7 3.946 59.5 0.134 47.7 0.429 �54.5 1000 0.118 154.0 3.253 47.0 0.163 41.7 0.403 �63.3 1200 0.141 124.4 2.750 35.1 0.194 35.3 0.379 �72.7 1400 0.182 104

1.329. 2sc5044.pdf Size:105K _sanyo

A 2.0 �s Fall Time tf IC=6A, IB1=1.0A, IB2=�3.0A 0.1 0.2 �s Switching Time Test Circuit No.4782�2/4 2SC5044 No.4782�3/4 2SC5044 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and

1.330. 2sa2016_2sc5569.pdf Size:57K _sanyo

tput Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF VCE(sat)1 IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV Collector-to-Emitter Saturation Voltage VCE(sat)2 IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0A (--50)100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100�A, RBE=0? (--50)100 V Collector-to-Emitter Breakdown Voltage

1.331. 2sc5374a.pdf Size:56K _sanyo

ns of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2809AB TK IM TC-00002118 No. A1090-1/6 2SC5374A Package Dime

1.332. 2sc5490a.pdf Size:47K _sanyo

e customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network N2608AB TI IM TC-00001691 No. A1091-1/5 2SC5490A Electrical Characteristics at Ta=25�C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=10mA 90 200 fT1 VCE=5V, IC=10mA 5 8 GHz Gain-Bandwidth Product fT2 VCE=1V, IC

1.333. 2sc5245.pdf Size:155K _sanyo

0.425 2SC5245 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Forward Transfer Gain | S21e |2 1 VCE=5V, IC=10mA, f=1.5GHz 8 10 dB | S21e |2 2 VCE=1V, IC=1mA, f=1.5GHz 5.5 dB Noise Figure NF1 VCE=5V, IC=5mA, f=1.5GHz 1.4 3.0 dB NF2 VCE=2V, IC=3mA, f=1GHz 0.9 dB No.5184�2/5 2SC5245 S Parameters No.5184�3/5 2SC5245 S parameters (Common emitter) VCE=5V, IC=5mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 200 0.76

1.334. 2sc5305.pdf Size:34K _sanyo

tor Current, IC � A No.5884-2/3 � � C C Collector Current, I A Collector Current, I A FE CE (sat) DC Current Gain,h Collector�to�Emitter Saturation Voltage, V �V BE (sat) Switching Time, SW Time � � s Base�to�Emitter Saturation Voltage, V �V 1.4A 1.6A 1.8A 2.0A 1.2A 1.0A 0.8A 0.6A 0.4A 0.2A C � 120 C C = � � a T 25 40 - C � 120 = Ta C � 25 C � C � - 40 C � Ta=120 25 C � 40 - t stg t f C � 25 C � 120 2SC5305 CC SW Time

1.335. 2sc5303.pdf Size:40K _sanyo

IC=20A, IB=5A 1.5 V Storage Time tstg IC=12A, IB1=2.4A, IB1=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB1=�4.8A 0.2 �s Switching Time Test Circuit IB1 OUTPUT IB2 PW=20�s I NPUT D.C.?1% RB RL=16.7? 50? VR ++ 100�F 470�F VBE VCC=200V =-2V IC - VCE IC - VBE 25 30 VCE=5V 28 26 24 20 22 20 18 15 16 14 12 10 10 8 6 5 9.0A 8.0A 7.0A 4 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Vol

1.336. 2sc5238.pdf Size:104K _sanyo

oltage VBE(sat) IC=40A, IB=10A 1.5 V Storage Time tstg IC=30A, IB1=5A, IB2=�15A 2.0 �s Fall Time tf IC=30A, IB1=5A, IB2=�15A 0.1 0.2 �s Switching Time Test Circuit No.5126�2/4 2SC5238 No.5126�3/4 2SC5238 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described product

1.337. 2sc5792.pdf Size:29K _sanyo

e tstg IC=7A, IB1=0.9A, IB2=--3.5A 3.0 �s Fall Time tf IC=7A, IB1=0.9A, IB2=--3.5A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT VR RB RL 28.6? 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 14 16 VCE=5V 14 12 12 10 10 8 8 6 0.4A 6 4 0.2A 4 0.1A 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT03563 Base-to-Emitter Voltage, VBE -- V IT03564 hFE -- IC VCE(sat) -- IC 5

1.338. 2sc5564.pdf Size:50K _sanyo

TA-2519 No.6305�1/5 4.25max 1.0 2.5 2SA2011/2SC5564 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max IC=(�)1.5A, IB=(�)30mA (�)120 (�)180 mV Collector-to-Emitter Saturation Voltage VCE(sat) (�190) (�290) mV IC=(�)3A, IB=(�)60mA 200 300 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)1.5A, IB=(�)30mA (�)0.85 (�)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 (�)15 V (�12) V Collector-to-Emitter Breakdown Voltage V(BR)CEO

1.339. 2sc5347a.pdf Size:67K _sanyo

.com/network D0308AB MS IM TC-00001778 No. A1087-1/6 2SC5347A Electrical Characteristics at Ta=25�C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 ?A Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 ?A DC Current Gain hFE VCE=5V, IC=50mA 60* 270* Gain-Bandwidth Product fT VCE=5V, IC=50mA 3 4.7 GHz Output Capacitance Cob VCB=10V, f=1MHz 1.3 2.0 pF Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.9 pF Forward Transfer Gain 6 8 dB

1.340. 2sc5638.pdf Size:42K _sanyo

2A, IB=3A 1.5 V Storage Time tstg IC=8A, IB1=1.6A, IB2=�3.2A 3.0 �s Fall Time tf IC=8A, IB1=1.6A, IB2=�3.2A 0.2 �s Switching Time Test Circuit PW=20� s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=25? VR + + 50? 100� F 470�F VBE=--2V VCC=200V IC -- VCE IC -- VBE 14 16 VCE=5V 14 12 12 10 10 8 8 6 6 4 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V IT01763 IT01764 hFE -- IC VCE(sa

1.341. 2sc5646a.pdf Size:55K _sanyo

racteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 31710AB TK IM TC-00002250 No. A1120-1/7 2SC5646A Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max fT1 VCE=1V, IC=5mA 8 10 GHz

1.342. 2sc5451.pdf Size:40K _sanyo

5A 1.5 V Storage Time tstg IC=9A, IB1=1.5A, IB2=�3.75A 3.0 �s Fall Time tf IC=9A, IB1=1.5A, IB2=�3.75A 0.2 �s Switching Time Test Circuit PW=20�s IB1 D.C.?1% IB2 OUTPUT INPUT RB RL=22.2? VR + + 50? 100�F 470�F VBE=�2V VCC=200V I - V I - V C CE C BE 16 14 VCE=5V 14 12 12 10 10 8 8 6 6 4 4 2 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I V - I ( ) FE C CE sat C 10

1.343. 2sc5488.pdf Size:34K _sanyo

7 2 3 5 7 2 3 5 7 2 1.0 10 100 1.0 10 100 Collector Current, IC � mA IT01363 Collector Current, IC � mA IT01364 Cob -- VCB Cre -- VCB 3 3 f=1MHz f=1MHz 2 2 1.0 1.0 7 7 5 5 3 3 2 2 0.1 0.1 7 7 5 5 7 2 3 5 7 2 3 5 7 2 3 7 2 3 5 7 2 3 5 7 2 3 0.1 1.0 10 0.1 1.0 10 Collector-to-Base Voltage, VCB -- V Collector-to-Base Voltage, VCB -- V IT01365 IT01366 2 NF -- IC ? S21e? -- IC 14 12 f=1GHz VCE=5V f=1GHz 12 10 10 8 8 6 6 4 4 2 2 0 0 3 5 7 2 3 5 7 2 3 5 7 2 3 5

1.344. 2sc5980.pdf Size:38K _sanyo

ge V(BR)CBO IC=10�A, IE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100�A, RBE=? 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10�A, IC=0 6 V Turn-ON Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 420 ns Fall Time tf See specified Test Circuit. 25 ns Package Dimensions Package Dimensions unit : mm unit : mm 2045B 2044B 6.5 2.3 5.0 6.5 2.3 0.5 4 5.0 0.5

1.345. 2sc5501a.pdf Size:264K _sanyo

t state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60408AB TI IM TC-00001434 No.

1.346. 2sa2099_2sc5888.pdf Size:76K _sanyo

es mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32608FA TI IM / D2502 TS IM TA-3711 No.7331-1/5 2SA2099 / 2SC5888 Electrical Characteristics at Ta=25�C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)10 ?A Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)10 ?A DC Current Gain hFE VCE=(--)2V, IC=(--)1A 200 (560)700 Gain-Bandwidth Product fT VC

1.347. 2sc5265.pdf Size:112K _sanyo

.4A, IB2=�0.8A 2.5 �s Fall Time tf IC=2.0A, IB1=0.4A, IB2=�0.8A 0.15 �s Switching Time Test Circuit No.5321�2/4 2SC5265 No.5321�3/4 2SC5265 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify

1.348. 2sc5551.pdf Size:43K _sanyo

r Saturation Voltage VCE(sat) IC=50mA, IB=5mA 0.15 0.3 V Collector-to-Base Saturation Voltage VBE(sat) IC=50mA, IB=5mA 0.9 1.2 V IC -- VCE hFE -- IC 100 1000 VCE=5V 7 5 80 3 2 60 100 7 40 5 3 100�A 20 2 50�A IB=0 0 10 0 4 8 12 16 20 2 3 5 7 2 3 5 7 2 3 5 7 1.0 10 100 1000 Collector-to-Emitter Voltage, VCE � V Collector Current, IC � mA IT01066 IT01067 2 VCE(sat) -- IC ? S21e? -- IC 20 1.0 VCE=5V IC / IB=10 7 18 5 16 3 14 2 12 10 0.1 7 8 5 6 3 4 2

1.349. 2sc5420.pdf Size:69K _sanyo

5A, IB2=�1.0A 2.5 �s Fall Time tf IC=2.5A, IB1=0.5A, IB2=�1.0A 0.15 �s Switching Time Test Circuit RC IB1 IB2 IB1 VOUT VCC 0.9 VOUT IB2 VOUT 0.1VOUT tstg tf I � V I � V C CE C BE 10 6 VCE=5V 5 8 4 6 3 4 2 2 1 = IB 0 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, V � V Base-to-Emitter Voltage, V � V CE BE h � I V � I ( ) FE C CE sat C 100 10 VCE=5V IC/IB=5 7 7 5 5 3 3 2 2 10 1.0 7 7 5 5 3 3 2 2 1.0 0.1 7 7 5 5 3

1.350. 2sc5764.pdf Size:31K _sanyo

F Collector-to-Base Breakdown Voltage V(BR)CBO IC=1mA, IE=0 700 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=5mA, RBE=? 400 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 8 V Turn-On Time ton IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 0.5 �s Storage Time tstg IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 2.5 �s Fall Time tf IC=5A, IB1=1A, IB2=--2A, RL=40?, VCC=200V 0.25 �s * : The 2SC5764 is classified by 0.8A hFE as follows. Rank M N hFE 20 to 40 30 to 50 Switching Time

1.351. 2sc5304ls.pdf Size:43K _sanyo

OUT VCC 0.9 VOUT IB2 VOUT 0.1 VOUT tstg tf I � V I - V C CE C BE 10 7 VCE=5V 6 8 5 6 4 3 4 2 2 1 = IB 0 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I V - I ( ) FE C CE sat C 100 10 VCE=5V IC/IB=5 7 7 5 5 3 2 3 1.0 2 7 5 10 3 2 7 5 0.1 7 3 5 3 2 2 1.0 0.01 3 5 7 2 3 5 7 2 3 5 7 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.1 1.0 10 Collector Current, IC � A Collector Curr

1.352. 2sc5347.pdf Size:114K _sanyo

max 1.0 2.5 2SC5347 No.5512�2/5 2SC5347 S Parameters No.5512�3/5 2SC5347 S parameters (Common emitter) VCE=5V, IC=50mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.358 �141.0 24.005 105.9 0.027 68.4 0.342 �63.0 200 0.354 �165.7 12.593 93.3 0.047 72.7 0.205 �68.4 300 0.355 �176.8 8.532 86.8 0.068 74.1 0.166 �69.7 400 0.359 174.9 6.428 81.9 0.089 73.7 0.149 �72.3 500 0.359 169.3 5.293 77.6 0.110 72.8 0.145 �75.3 600 0.362 163.9 4.360 73.5 0.1

1.353. 2sc5536a.pdf Size:51K _sanyo

ucts in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. http://semicon.sanyo.com/en/network 42110AB TK IM TC-00002325 No. A1092-1/5 2SC5536A Continued from preceding page. Rati

1.354. 2sc5568.pdf Size:49K _sanyo

-2522 No.6308�1/5 2.5 4.25max 1.0 2SA2015/2SC5568 Continued on preceding page. Ratings Parameter Symbol Conditions Unit min typ max (�200) (�340) mV IC=(�)4A, IB=(�)200mA 180 270 mV Collector-to-Emitter Saturation Voltage VCE(sat) (�170) (�290) mV IC=(�)2.5A, IB=(�)50mA 130 195 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)2.5A, IB=(�)50mA (�)0.85 (�)1.2 V (�30) V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 40 V Collector-to-Emitter Breakdown Voltage

1.355. 2sc5228.pdf Size:128K _sanyo

5035�2/5 2SC5228 S Parameters No.5035�3/5 2SC5228 S parameters (Common emitter) VCE=5V, IC=7mA, ZO=50? Freq (MHz) | S11 | ? S11 | S21 | ? S21 | S12 | ? S12 | S22 | ? S22 100 0.803 �38.2 18.190 151.5 0.026 71.3 0.903 �19.3 200 0.677 �68.5 14.614 131.5 0.042 59.3 0.753 �31.5 400 0.508 �132.7 9.484 108.0 0.061 51.6 0.549 �41.1 600 0.442 �132.7 6.775 95.1 0.073 50.9 0.453 �44.2 800 0.407 �151.0 5.256 85.7 0.086 52.1 0.406 �46.4 1000 0.393 �163.5 4.285 78.5 0.098 53.1 0.383 �48.9 1200

1.356. 2sc5417.pdf Size:45K _sanyo

I C � A S No.5817-2/4 C C Collector Current, I � A Collector Current, I � A CE(sat) FE DC Current Gain, h BE(sat) Switching Time, SW Time � � s Collector-to-Emitter Saturation Voltage, V � V Base-to-Emitter Saturation Voltage, V � V A 0 . A 2 8 . 1 A 6 . 1 A 4 . 1 A 2 . 1 A 0 . 1 A 8 . 0 A 6 . 0 A 4 . 0 C � 0 2 C A 2 . 1 0 � C = 5 � a 2 0 T 4 A 1 � . 0 C � 0 2 1 = a T C � 5 2 C � 0 2 C � 0 1 4

1.357. 2sc5682.pdf Size:28K _sanyo

=14.4A, IB=3.6A 1.5 V Storage Time tstg IC=10A, IB1=2A, IB2=--4A 3.0 �s Fall Time tf IC=10A, IB1=2A, IB2=--4A 0.2 �s Switching Time Test Circuit IB1 PW=20�s OUTPUT D.C.?1% IB2 INPUT RB RL=20? VR 50? + + 100�F 470�F VBE= --2V VCC=200V IC -- VCE IC -- VBE 20 12 VCE=5V 18 10 16 14 8 12 10 6 8 4 6 4 2 2 IB=0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02400 Base-to-Emitter Voltage, VBE -- V IT02401 hFE -- IC VCE(

1.358. 2sc5305ls.pdf Size:42K _sanyo

VOUT VCC 0.9 VOUT IB2 VOUT 0.1 VOUT tstg tf I - V I - V C CE C BE 10 7 VCE=5V 6 8 5 6 4 3 4 2 2 1 = IB 0 0 0 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V h - I V - I ( ) FE C CE sat C 100 10 VCE=5V IC/IB=5 7 7 5 5 3 2 3 1.0 2 7 5 10 3 2 7 5 0.1 7 3 5 3 2 2 1.0 0.01 3 5 7 2 3 5 7 2 3 5 7 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 10 0.1 1.0 10 Collector Current, IC � A Collector Cu

1.359. 2sc5444.pdf Size:42K _sanyo

age Time tstg IC=12A, IB1=2.4A, IB2=�4.8A 3.0 �s Fall Time tf IC=12A, IB1=2.4A, IB2=�4.8A 0.2 �s Switching Time Test Circuit PW=20�s D.C.?1% IB1 IB2 OUTPUT INPUT RB VR RL=16.7? 50? + + 100�F 470�F 200 VBE=-2V VCC= V IC - VCE IC - VBE 25 30 VCE=5V 28 26 24 20 22 20 18 15 16 14 12 10 10 8 6 5 9.0A 8.0A 7.0A 4 2 = IB 0 0 0 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE � V Base-to-Emitter Voltage, VBE � V hFE - IC VCE(sa

1.360. 2sc5388.pdf Size:41K _sanyo

ge V(BR)CBO IC=1mA, IE=0 1500 V Diode Forward Voltage VF IEC=5A 2.0 V Fall Time tf IC=5A, IB1=0.5A, IB2=�2.5A, VCC=200V, RL=40? 0.8 �s Storage Time tstg IC=5A, IB1=0.5A, IB2=�2.5A, VCC=200V, RL=40? 3 �s Switching Time Test Circuit OUTPUT IB1 PW=20� s T.U.T D.C.?1% IB2 INPUT RB RL VR R1 R2 50? ++ 100� F 470� F VCC=200V VBE=--5V IC -- VCE IC -- VBE 10 5.0 90mA VCE=5V 80mA 4.5 9 70mA 8 4.0 60mA 50mA 3.5 7 3.0 6 2.5 5 4 2.0 1.5 3 1.0 2 IB=0 0.5 1 5mA 0 0 0

1.361. 2sc5042.pdf Size:101K _sanyo

0 �s Fall Time tf IC=4A, IB1=0.7A, IB2=�2.0A 0.1 0.2 �s Switching Time Test Circuit No.4780�2/4 2SC5042 No.4780�3/4 2SC5042 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and sta

1.362. 2sc5265ls.pdf Size:31K _sanyo

torage Time tstg IC=2.0A, IB1=0.4A, IB2=--0.8A 2.5 �s Fall Time tf IC=2.0A, IB1=0.4A, IB2=--0.8A 0.15 �s Switching Time Test Circuit RC IB1 IB2 IB1 VOUT 0.9 VOUT IB2 VCC VOUT 0.1 VOUT tstg tf IC -- VCE hFE -- IC 8 100 VCE=5V 7 5 6 3 2 4 10 7 2 5 3 IB=0 0 2 0 2 4 6 8 10 3 5 7 2 3 5 7 2 3 5 7 0.1 1.0 Collector-to-Emitter Voltage, VCE -- V ITR08008 Collector Current, IC -- A ITR08009 VCE(sat) -- IC IC -- VBE 5 7 VCE=5V IC / IB=5 5 3 4 2 1.0 3 7 5 2 3 2

1.363. 2sc5694.pdf Size:37K _sanyo

(--150)130 (--300)260 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2.5A, IB=(--)125mA (--)0.85 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0 (--50)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10�A, IC=0 (--)6 V Turn-On Time ton See specified test circuit. 30 ns Storage Time tstg See specified test circuit. (250)300 ns Fall Time tf See specified test circuit. 15 ns Swic

1.364. 2sc5775.pdf Size:29K _sanyo

(--)5A, IC=(--)6A 1.5 V Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)6A, IB=(--)0.6A (-- 0.3)0.2 (--)2.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0 (--)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=? (--)160 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0 (--)6 V Turn-On Time ton See specified Test Circuit. (0.45)0.56 �s Storage Time tstg See specified Test Circuit. (1.75)3.3 �s Fall Time tf See specified Test Circuit.

1.365. 2sc5999.pdf Size:37K _sanyo

lector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=? 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=100�A, IC=0 6 V Turn-ON Time ton See specified Test Circuit. 230 ns Storage Time tstg See specified Test Circuit. 1300 ns Fall Time tf See specified Test Circuit. 40 ns Package Dimensions Switching Time Test Circuit unit : mm 2069C IB1 PW=20�s OUTPUT D.C.?1% IB2 10.2 4.5 1.3 INPUT VR RB RL 50? + + 100�F 470�F 1 2 3 VBE= --5V VCC=20V 0 to 0.3 0.8 1.2 0.4 2.55

1.366. 2sa608n_2sc536n.pdf Size:36K _sanyo

z (4.5)3.0 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)100mA, IB=(--)10mA (--)0.3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)100mA, IB=(--)10mA (--)1.0 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10�A, IE=0 (--)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=? (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10�A, IC=0 (--)6 V *The 2SA608N / 2SC536N are classified by 1mA hFE as follow. Rank F G hFE 160 to 320 280 to 560 I

1.367. 2sc5041.pdf Size:101K _sanyo

C=4A, IB1=0.7A, IB2=�2.0A 2.0 �s Fall Time tf IC=4A, IB1=0.7A, IB2=�2.0A 0.1 0.2 �s Switching Time Test Circuit No.4779�2/4 2SC5041 No.4779�3/4 2SC5041 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment

1.368. 2sc5646.pdf Size:31K _sanyo

8 20 6 4 10 2 IB=0 0 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT02260 Base-to-Emitter Voltage, VBE -- V IT02261 hFE -- IC fT -- IC 1000 100 7 7 5 5 3 3 2 2 100 10 1V 7 7 5 5 3 3 2 2 10 1.0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC -- mA IT02262 Collector Current, IC -- mA IT02253 Cob -- VCB Cre -- VCB 1.0 1.0 f=1MHz f=1MHz 7 7 5 5 3 3 2 2 0.1 0.1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7

1.369. 2sc5610.pdf Size:51K _sanyo

yp max (�150) (�300) mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(�)2.5A, IB=(�)125mA 130 260 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)2.5A, IB=(�)125mA (�)0.85 (�)1.2 V (�50) V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(�)10�A, IC=0 (�)6 V Turn-ON Time ton See specified Test Circuit 30 ns (250) ns Storage Time tstg See

1.370. 2sc5665.pdf Size:36K _sanyo

VCE=1V, IC=5mA, f=2GHz 1.5 2.3 dB IC -- VCE IC -- VBE 50 70 60 40 50 30 40 30 20 20 10 10 IB=0 0 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-to-Emitter Voltage, VCE -- V IT04829 Base-to-Emitter Voltage, VBE -- V IT04830 hFE -- IC fT -- IC 1000 3 7 2 5 3 10 2 1V 7 100 5 7 5 3 3 2 2 10 1.0 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 1.0 10 100 1.0 10 100 Collector Current, IC -- mA IT04831 IT04832 Collector Current, IC -- mA Cob -- VCB Cre -- VCB 10 10 f=1

1.371. 2sc5310.pdf Size:44K _sanyo

dwidth Product fT VCE=(�)10V, IC=(�)50mA 150 MHz Output Capacitance Cob VCB=(�)10V, f=1MHz (32)19 pF (�150) (�300) mV Collector-to-Emitter Saturation Voltage VCE(sat) IC=(�)500mA, IB=(�)25mA 100 200 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(�)500mA, IB=(�)25mA (�)0.85 (�)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(�)10�A, IE=0 (�)30 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(�)1mA, RBE=? (�)25 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(�)10�A, IC=0 (�

1.372. 2sc5820.pdf Size:140K _renesas

ology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other

1.373. 2sc5998.pdf Size:104K _renesas

t Transfer Ratio h 2SC5998 Collector Output Capacitance vs. Reverse Transfer Capacitance vs. Collector to Base Voltage Collector to Base Voltage 4.0 2.0 IE = 0 Emitter grounded f = 1 MHz f = 1 MHz 3.0 1.5 2.0 1.0 1.0 0.5 0 1 2 3 4 5 0 1 2 3 4 5 Collector to Base Voltage VCB (V) Collector to Base Voltage VCB (V) Transition Frequency vs. S21 Parameter, Maximum Available Gain, Collector Current Maximum Stable Gain vs. Frequency 12 40 VCE = 3.6 V f = 1 GHz IC = 100 mA VCE=3.6V

1.374. 2sc5593.pdf Size:63K _renesas

1.375. 2sc5945.pdf Size:276K _renesas

equency vs. Collector to Base Voltage Collector Current 20 1.5 IE = 0 VCE = 3 V f = 1 MHz f = 1 GHz 15 1.0 10 0.5 5 0 1 10 100 1000 0 1 2 3 4 5 Collector to Base Voltage VCB (V) Collector Current IC (mA) Maximum Available Gain, Maximum Stable Gain S21 Parameter, Maximum Available Gain, vs. Collector Current Maximum Stable Gain vs. Frequency 40 30 VCE = 3 V VCE = 3 V MAG f = 0.5 GHz IC = 100 mA 25 MSG 30 20 MSG 1.0 GHz 20 15 1.8 GHz MAG 10 10 2.4 GHz |S21|2

1.376. rej03g1921_rjk03c5dpads.pdf Size:80K _renesas

REJ03G1921-0200 Rev.2.00 Page 2 of 6 Apr 27, 2010 RJK03C5DPA Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 80 1000 100 60 10 40 PW = 10 ms Operation in this area is 20 1 limited by RDS(on) Tc = 25�C 1 shot Pulse 0.1 0 0.1 1 10 100 50 100 150 200 Drain to Source Voltage VDS (V) Case Temperature Tc (�C) Typical Output Characteristics Typical Transfer Characteristics 100 100 4.5 V Pulse Test VDS = 5 V 3.0 V 10 V Pulse

1.377. 2sc5850.pdf Size:85K _renesas

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VCE = 2 V f = 2 GHz 16 12 8 4 0 1 2 5 10 20 100 50 Collector Current IC (mA) Rev.2.00, Oct.21.2003, page 4 of 7 Noise Figure NF (dB) Power Gain PG (dB) 2 21 21 S Parameter |S | (dB) 2SC5624 S21 Parameter vs. Frequency S11 Parameter vs. Frequency Scale: 12 / div. 1 90 .8 1.5 .6 60 120 2 .4 3 30 4 150 .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180 0 -10 -5 -.2 -4 -30 -150 -3 -.4 -2 -60 -120 -.6 -1.5 -.8 -90 -1 Condition ; Conditio

1.382. 2sc5894.pdf Size:129K _renesas

1.383. 2sc5890.pdf Size:169K _renesas

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1.385. ksc5305d.pdf Size:243K _fairchild_semi

licon Transistor Typical Characteristics 5 100 IB = 500mA IB = 450mA VCE = 1V Ta = 125oC IB = 400mA IB = 350mA 4 o IB = 300mA 25 C o IB = 250mA -25 C IB = 200mA 3 IB = 150mA IB = 100mA 10 2 IB = 50mA 1 IB = 0 0 1 0 1 2 3 4 5 6 7 8 9 10 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 10 IC = 10 IB VCE = 5V Ta = 125oC o 25 C -20oC 1 VBE(sat) 10 VCE(sat) 0.1 1 0.01 0.01 0

1.386. ksc5402dt.pdf Size:220K _fairchild_semi

Gain Bandwidth IC=0.5A, VCE=10V 11 MHz Product VF Diode Forward Voltage IF=1A TA=25�C 0.86 1.5 V IF=0.2A TA=25�C 0.75 1.2 V TA=125�C0.6 V IF=0.4A TA=25�C0.8 1.3 V TA=125�C0.65 V � 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5402D/KSC5402DT Rev. C0 2 KSC5402D/KSC5402DT � NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics (Continued) TA=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units tfr Diode Froward R

1.387. ksc5027.pdf Size:53K _fairchild_semi

0.1 0.01 0.01 1E-3 0.1 1 10 1 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Switching Time Figure 6. Safe Operating Area �2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5027 FE h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT C I [A], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE ON STG F t , t , t [ � s], TIME C I [A], COLLECTOR CURRENT 10 100 m 1m s � s s DC Typical Characteristics

1.388. bc516.pdf Size:25K _fairchild_semi

ET� Across the board. Around the world.� The Power Franchise� OPTOLOGIC� SILENT SWITCHER� VCX� Programmable Active Droop� OPTOPLANAR� SMART START� DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR

1.389. bc547_bc547a_bc547b_bc547c.pdf Size:26K _fairchild_semi

1.390. ksc5039.pdf Size:54K _fairchild_semi

0 Fairchild Semiconductor International Rev. A, February 2000 KSC5039 FE h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT C I [A], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE OB C (pF), CAPACITANCE T f (MHz), CURRENT GAIN BANDWIDTH PRODUCT Typical Characteristics (Continued) 10 100 VCC = 150V IC = 5IB1 = -5IB2 tSTG 50�s IC(max).(Pulse) 10 1 IC(max)(DC) 1 tF 0.1 0.1 0.01 0.01 0.1 1 10 1 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A]

1.391. ksc5030f.pdf Size:142K _fairchild_semi

.9 1.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Forward Biased Safe Operating Area 10 100 tSTG IC(max).(Pulse) 10 IC(max) 1 tON 1 tF 0.1 0.1 0.01 0.01 0.1 1 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT 3 www.fairchildsemi.com KSC5030F Rev. A KSC5030F High Voltage Fast Switching Transistor FE h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT C I [A], COLLECTOR CURRENT BE CE V (sat), V (sat)[

1.392. fdmc510p.pdf Size:307K _fairchild_semi

= -2.5 V, ID = -10 A 7.6 9.8 rDS(on) Static Drain to Source On Resistance VGS = -1.8 V, ID = -9.3 A 9.2 13 m? VGS = -1.5 V, ID = -8.3 A 11 17 VGS = -4.5 V, ID = -12 A, TJ = 125 �C 8.5 12 gFS Forward Transconductance VDS = -5 V, ID = -12 A 75 S Dynamic Characteristics Ciss Input Capacitance 5910 7860 pF VDS = -10 V, VGS = 0 V, Coss Output Capacitance 840 1120 pF f = 1 MHz Crss Reverse Transfer Capacitance 738 1110 pF Switching Characteristics td(on) Turn-On Delay Time 15 27 ns tr R

1.393. fdc5612.pdf Size:78K _fairchild_semi

4 ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 10 A gFS Forward Transconductance VDS = 10 V, ID = 4.3 A 14 S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, 650 pF f = 1.0 MHz Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 35 pF (Note 2) Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 1 A, 11 20 ns VGS = 10 V, RGEN = 6 ? tr Turn-On Rise Time 8 18 ns td(off) Turn-Off Delay Time 19 35 ns tf Turn-Off Fall Time 6 15 ns

1.394. bc517.pdf Size:27K _fairchild_semi

ROCOUPLER� PowerSaver� SuperSOT�-3 FRFET� CROSSVOLT� MicroFET� PowerTrench? SuperSOT�-6 GlobalOptoisolator� DOME� MicroPak� QFET? SuperSOT�-8 GTO� EcoSPARK� MICROWIRE� QS� SyncFET� HiSeC� E2CMOS� MSX� QT Optoelectronics� TinyLogic? I2C� EnSigna� MSXPro� Quiet Series� TINYOPTO� i-Lo� FACT� OCX� RapidConfigure� TruTranslation� ImpliedDisconnect� FACT Quiet Series� OCXPro� RapidConnect� UHC� OPTOLOGIC? �SerDes� UltraFET? Across the board. Around the world.� OPTOPLANAR� SILENT SWITC

1.395. 2sc5242_fja4313.pdf Size:468K _fairchild_semi

BE hFE1 R grade FJA4313OTU J4313O TO-3P TUBE hFE1 O grade � 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SC5242/FJA4313 Rev. C 2 2SC5242/FJA4313 � NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA IB = 180mA 14 Vce=5V IB = 160mA Tj=125oC Tj=25oC IB = 140mA 12 IB = 120mA 100 IB = 100mA 10 IB = 80mA Tj=-25oC 8 IB = 60mA 6 10 IB = 40mA 4 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 110 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLL

1.396. ksc5039f.pdf Size:58K _fairchild_semi

ct �2000 Fairchild Semiconductor International Rev. A, February 2000 KSC5039F FE h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT C I [A], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE OB C (pF), CAPACITANCE T f (MHz), CURRENT GAIN BANDWIDTH PRODUCT Typical Characteristics (Continued) 100 10 VCC = 150V IC = 5IB1 = -5IB2 50�s tSTG IC(max).(Pulse) 10 1 IC(max)(DC) 1 tF 0.1 0.1 0.01 0.01 1 10 100 1000 10000 0.1 1 10 VCE[V], COLLECTOR-EMITTER V

1.397. ksc5042f.pdf Size:56K _fairchild_semi

A m 2 = I B A m 1 = I B 100 200 � s 500 � 1 s m � 10 s s m s DC Package Dimensions TO-220F 2.54 �0.20 10.16 �0.20 o3.18 �0.10 (7.00) (0.70) (1.00x45�) MAX1.47 0.80 �0.10 #1 0.35 �0.10 +0.10 0.50 �0.05 2.76 �0.20 2.54TYP 2.54TYP [2.54 �0.20] [2.54 �0.20] 9.40 �0.20 Dimensions in Millimeters �2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5042F 3.30 � 0.10 6.68 � 0.20 15.87 � 0.20 15.80 � 0.20 9.75 � 0.30 4.70 � 0

1.398. ksc5502.pdf Size:226K _fairchild_semi

tance VCB=10V, IE=0, f=1MHz 20 100 pF * Pulse Test : Pulse Width = 5ms, Duty Cycle ? 10% � 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5502 Rev. A1 2 KSC5502 � High Voltage Power Switch Mode Application Electrical Characteristics TC=25�C unless otherwise noted Symbol Parameter Test Condition Min Typ. Max. Units VCE(DSAT) Dynamic Saturation Voltage IC=0.4A, IB1=80mA @ 1�s 11 V VCC=300V @ 3�s 8 V IC=1A, IB1=200mA @ 1�s 23 V VCC=300V @ 3�s 13 V RESISTIVE LOAD SW

1.399. ksc5502d.pdf Size:137K _fairchild_semi

rward Voltage IF=0.2A TC=25�C0.75 1.2 V TC=125�C0.59 V IF=0.4A TC=25�C0.80 1.3 V TC=125�C0.64 V IF=1A TC=25�C0.9 1.5 V �2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Electrical Characteristics TC=25�C unless otherwise noted Symbol Parameter Test Condition Min Typ. Max. Units tfr Diode Froward Recvery Time IF=0.2A 650 ns (di/dt=10A/�s) IF=0.4A 740 ns IF=1A 785 ns VCE(DSAT) Dynamic Saturation Voltage IC=0.4A, IB1=80mA @ 1�s7.2 V VCC=300V @ 3�s1.8 V

1.400. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

Gain Bandwidth Product �2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC546/547/548/549/550 C C I [mA], COLLECTOR CURRENT I [mA], COLLECTOR CURRENT FE h , DC CURRENT GAIN BE CE V (sat), V (sat)[mV], SATURATION VOLTAGE ob C [pF], CAPACITANCE T f , CURRENT GAIN-BANDWIDTH PRODUCT Package Dimensions TO-92 +0.25 4.58 �0.15 0.46 �0.10 +0.10 1.27TYP 1.27TYP 0.38 �0.05 [1.27 �0.20] [1.27 �0.20] 3.60 �0.20 (R2.29) Dimensions in Millimeters �2002 Fairchild

1.401. ksc5502d-dt.pdf Size:137K _fairchild_semi

1.402. fdc5614p.pdf Size:140K _fairchild_semi

Time 7 14 ns VDD = �30 V, ID = �1 A, VGS = �10 V, RGEN = 6 ? tr Turn�On Rise Time 10 20 ns td(off) Turn�Off Delay Time 19 34 ns tf Turn�Off Fall Time 12 22 ns Qg Total Gate Charge 15 24 nC VDS = �30V, ID = �3.0 A, VGS = �10 V Qgs Gate�Source Charge 2.5 nC Qgd Gate�Drain Charge 3.0 nC Drain�Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain�Source Diode Forward Current �1.3 A VSD Drain�Source Diode Forward VGS = 0 V, IS = �1.3 A (Note 2) �0.8 �1.2 V

1.403. bc548_bc548a_bc548b_bc548c.pdf Size:21K _fairchild_semi

1.404. fdc5661n_f085.pdf Size:419K _fairchild_semi

Time - 3.1 - ns toff Turn-Off Time - - 36 ns Drain-Source Diode Characteristics ISD = 4.3A - 0.8 1.25 VSD Source to Drain Diode Voltage V ISD = 2.1A - 0.8 1.0 trr Reverse Recovery Time - 18.4 24 ns ISD = 4.3A, dISD/dt = 100A/?s Qrr Reverse Recovery Charge - 10.0 13 nC Notes: 1: This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchi

1.405. ksc5338d.pdf Size:388K _fairchild_semi

andwidth Product IC=0.5A,VCE=10V 11 MHz VF Diode Forward Voltage IF=1A, IC=1mA, Ta=25�C0.86 1.3 V IE=0 Ta=125�C0.79 V IF=2A Ta=25�C0.95 1.5 V Ta=125�C0.88 V tfr Diode Forward Recovery Time IF=0.4A 460 ns (di/dt=10A/�s) IF=1A 360 ns IF=2A 325 ns VCE(DSAT) Dynamic Saturation Voltage IC=1A, IB1=100mA Ta=25�C8V VCC=300V at 1 �s Ta=125�C15 V IC=1A, IB1=100mA Ta=25�C2.9 V VCC=300V at 3 �s Ta=125�C8 V IC=2A, IB1=400mA Ta=25�C9V VCC=300V at 1 �s Ta=125�C17 V IC=2A, IB1=400mA Ta=25�C1.9

1.406. ksc5086_.pdf Size:64K _fairchild_semi

( � s), FALL TIME stg t ( � s), STORAGE TIME C I [A], COLLECTOR CURRENT 10 0 30 � s 0 � s 10 1m m s s DC Typical Characteristics (Continued) 100 80 70 60 10 IB2=-1A 50 CONSTANT 40 30 1 20 IC=5IB1 = 5IB2 10 L=500�H SINGLE PULSE 0.1 0 10 100 1000 10000 0 25 50 75 100 125 150 175 200 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], TEMPERATURE Figure 1. Reverse Bias Safe Operating Area Figure 2. Power Derating �2000 Fairchild Semiconductor International Rev

1.407. ksc5603d.pdf Size:109K _fairchild_semi

.5 V TA=125�CV � 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com KSC5603D Rev. C2 2 KSC5603D � NPN Silicon Transistor, Planar Silicon Transistor Electrical Characteristics (Continued) TA=25�C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20?s) tON Turn On Time IC=0.3A, TA=25�C400 600 ns IB1=50mA, TA=125�Cns IB2=150A, tSTG Storage Time TA=25�C 2.0 2.1 2.3 ?s VCC=125V, TA=125�C ?s RL =

1.408. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

O-264 TUBE hFE1 R grade FJL4315OTU J4315O TO-264 TUBE hFE1 O grade � 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SC5200/FJL4315 Rev. C 2 2SC5200/FJL4315 � NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA IB = 180mA 14 Vce=5V IB = 160mA Tj=125oC Tj=25oC IB = 140mA 12 IB = 120mA 100 IB = 100mA 10 IB = 80mA Tj=-25oC 8 IB = 60mA 6 10 IB = 40mA 4 2 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 110 VCE[V], COLLECTOR-EMITTER VOLTAGE Ic

1.409. ksc5019.pdf Size:38K _fairchild_semi

1m s 10m 100m s s Package Dimensions TO-92 +0.25 4.58 �0.15 0.46 �0.10 +0.10 1.27TYP 1.27TYP 0.38 �0.05 [1.27 �0.20] [1.27 �0.20] 3.60 �0.20 (R2.29) Dimensions in Millimeters �2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC5019 4.58 � 0.20 14.47 � 0.40 3.86MAX (0.25) +0.10 �0.05 0.38 1.02 � 0.10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended t

1.410. ksc5026m.pdf Size:120K _fairchild_semi

IB 1.4 1.2 VBE(sat) 1 1.0 0.8 0.6 VCE(sat) 0.1 0.4 0.2 0.01 0.0 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage 10 10 IC(max).(Pulse) IC(max) 1 tSTG 1 tON 0.1 tF 0.1 0.01 0.01 1E-3 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe O

1.411. ksc5021.pdf Size:302K _fairchild_semi

C O 10 Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 1 0.01 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CUTRRENT IC [A], COLLECTOR CURRENT Figure 5. Saturatin Voltage (O-Grade) Figure 6. Saturation Voltage (R-Grade) 10 10 IC = 4 IB IC = 4 IB O Ta = 125 C Ta = 25 OC O 1 1 Ta = - 25 C O Ta = 125 OC Ta = 75 C Ta = 75 OC O Ta = - 25 C 0.1 0.1 O Ta = 25 C 0.01 0.01 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT � 2007 Fairchild Semic

1.412. ksc5386.pdf Size:764K _fairchild_semi

uch trademarks. ACEx� ISOPLANAR� SyncFET� CoolFET� MICROWIRE� TinyLogic� CROSSVOLT� POP� UHC� E2CMOS� PowerTrench� VCX� FACT� QFET� FACT Quiet Series� QS� FAST� Quiet Series� FASTr� SuperSOT�-3 GTO� SuperSOT�-6 HiSeC� SuperSOT�-8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

1.413. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

Capacitance Figure 6. Current Gain Bandwidth Product �2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BC556/557/558/559/560 FE h , DC CURRENT GAIN C I [mA], COLLECTOR CURRENT C I [mA], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE ob C (pF), CAPACITANCE T f [MHz], CURRENT GAIN-BANDWIDTH PRODUCT Package Dimensions TO-92 +0.25 4.58 �0.15 0.46 �0.10 +0.10 1.27TYP 1.27TYP 0.38 �0.05 [1.27 �0.20] [1.27 �0.20] 3.60 �0.20 (R2.29) Dimensio

1.414. ksc5024.pdf Size:58K _fairchild_semi

Switching Time Figure 6. Safe Operating Area �2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5024 FE h , DC CURRENT GAIN C I [A], COLLECTOR CURRENT C I [A], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE ON STG F t , t , t [ � s], TIME C I [A], COLLECTOR CURRENT 100 10 � 1m m s s s DC Typical Characteristics (Continued) 100 100 90 80 10 70 60 1 50 40 30 0.1 20 10 0.01 0 10 100 1000 10000 0 25 50 75 100 125 150 175

1.415. fdmc5614p.pdf Size:506K _fairchild_semi

ductance VDS = -15V, ID = -5.7A 11 S Dynamic Characteristics Ciss Input Capacitance 795 1055 pF VDS = -30V, VGS = 0V, Coss Output Capacitance 140 185 pF f = 1MHz Crss Reverse Transfer Capacitance 60 90 pF Switching Characteristics td(on) Turn-On Delay Time 10 21 ns VDD = -30V, ID = -1A tr Rise Time 11 23 ns VGS = -10V, RGEN = 6? td(off) Turn-Off Delay Time 32 65 ns tf Fall Time 11 22 ns Qg(TOT) Total Gate Charge at 10V VGS = -10V 15 20 nC VDD = -30V Qgs Gate to Source Gate Charg

1.416. irgc5b120kb.pdf Size:16K _international_rectifier

1.417. irfpc50.pdf Size:164K _international_rectifier

1.418. irfpc50pbf.pdf Size:1924K _international_rectifier

ility whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and

1.419. irg4cc50sb.pdf Size:39K _international_rectifier

1.420. irc530.pdf Size:226K _international_rectifier

1.421. irgpc50md2.pdf Size:148K _international_rectifier

ture Coeff. of Threshold Voltage ---- -14 ---- mV/�C VCE = VGE, IC = 250�A gfe Forward Transconductance T 11 20 ---- S VCE = 100V, IC = 35A ICES Zero Gate Voltage Collector Current ---- ---- 250 �A VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150�C V Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 FM ---- 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current ---- ---- �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise s

1.422. irgmc50u.pdf Size:547K _international_rectifier

IC = 250 �A gfe Forward Transconductance T 16 �� S VCE ? 15V, IC = 20A �� 50 VGE = 0V, VCE = 480V ICES Zero Gate Voltage Collector Current �A �� 5000 VGE = 0V, VCE = 480V, TJ = 125�C IGES Gate-to-Emitter Leakage Current �� 500 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) �� 115 140 IC = 20A Qge Gate - Emitter Charge (turn-on) �� 15 35 nC VCC = 300V See Fi

1.423. irfpc50a.pdf Size:95K _international_rectifier

Output Capacitance �� 74 �� VGS = 0V, VDS = 480V, ? = 1.0MHz Coss eff. Effective Output Capacitance �� 81 �� VGS = 0V, VDS = 0V to 480V Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy �� 920 mJ IAR Avalanche Current �� 11 A EAR Repetitive Avalanche Energy �� 18 mJ Thermal Resistance Parameter Typ. Max. Units R?JC Junction-to-Case �� 0.65 R?CS Case-to-Sink, Flat, Greased Surface 0.24 �� C/W R?JA Junction-to-Ambient �� 40 Diode Charact

1.424. irgcc50ke.pdf Size:19K _international_rectifier

1.425. irg4mc50u.pdf Size:144K _international_rectifier

llector Current �A �� 2000 VGE = 0V, VCE = 480V, TJ = 125�C IGES Gate-to-Emitter Leakage Current �� 100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) �� 270 IC = 27A Qge Gate - Emitter Charge (turn-on) �� 38 nC VCC = 480V See Fig. 8 Qgc Gate - Collector Charge (turn-on) �� 90 VGE = 15V td(on) Turn-On Delay Time �� 75 TJ = 25�C tr Rise Time �� 7

1.426. irgc5b60kb.pdf Size:15K _international_rectifier

1.427. irgpc50f.pdf Size:113K _international_rectifier

ified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 84 100 IC = 39A Qge Gate - Emitter Charge (turn-on) � 20 25 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 51 67 VGE = 15V td(on) Turn-On Delay Time � 24 � TJ = 25�C tr Rise Time � 50 � ns IC = 39A, VCC = 480V td(off) Turn-Off Delay Time � 270 540 VGE = 15V, RG = 5.0? tf Fall Time � 210 360 Energy losses include "tail" Eon Turn-On Switching Loss � 1.7 � Eoff Turn-Off Switching Loss � 4.3

1.428. irc540.pdf Size:222K _international_rectifier

1.429. irgpc50kd2.pdf Size:195K _international_rectifier

1.430. irgmvc50u.pdf Size:555K _international_rectifier

= 250 �A ? gfe Forward Transconductance ? 16 �� S VCE = 100V, IC = 27A ? ? ? �� 250 VGE = 0V, VCE = 480V �A ICES Zero Gate Voltage Collector Current �� 5000 VGE = 0V, VCE = 480V, TJ = 125�C nA IGES Gate-to-Emitter Leakage Current �� 100 VGE = �20 VFM Diode Forward Voltage Drop �� 1.7 IC = 27A V �� 1.5 IC = 27A , TJ = 125�C Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Char

1.431. irfk2dc50.pdf Size:165K _international_rectifier

1.432. irhn2c50se.pdf Size:32K _international_rectifier

tion Electrical Characteristics @ Tj = 25�C (Unless Otherwise Specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 600 � � V VGS = 0V, ID = 1.0 mA ?BVDSS/?TJ Temperature Coefficient of Breakdown � 0.45 � V/�C Reference to 25�C, ID = 1.0 mA Voltage RDS(on) Static Drain-to-Source � � 0.60 VGS = 12V, ID = 6.5A On-State Resistance � � 0.65 ? VGS = 12V, ID = 10.4A VGS(th) Gate Threshold Voltage 2.5 � 4.5 V VDS = VGS, ID = 1.0 mA gfs Forward Transc

1.433. irg4bac50u.pdf Size:181K _international_rectifier

cteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) �� 180 270 IC = 27A Qge Gate - Emitter Charge (turn-on) �� 25 38 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) �� 61 90 VGE = 15V td(on) Turn-On Delay Time �� 32 �� tr Rise Time �� 20 �� TJ = 25�C ns td(off) Turn-Off Delay Time �� 170 260 IC = 27A, VCC = 480V tf Fall Time �� 88 130 VGE = 15V, RG = 5.0? Eon Turn-On Switching Loss �� 0.12

1.434. irgcc50fe.pdf Size:19K _international_rectifier

1.435. irg4pc50f.pdf Size:146K _international_rectifier

to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 190 290 IC = 39A Qge Gate - Emitter Charge (turn-on) � 28 42 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 65 97 VGE = 15V td(on) Turn-On Delay Time � 31 � tr Rise Time � 25 � TJ = 25�C ns td(off) Turn-Off Delay Time � 240 350 IC = 39A, VCC = 480V tf Fall Time � 130 190 VGE = 15

1.436. irg4cc50ub.pdf Size:35K _international_rectifier

1.437. irhm2c50se.pdf Size:98K _international_rectifier

RHM2C50SE, IRHM7C50SE Devices Pre-Irradiation Electrical Characteristics @ Tj = 25�C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 600 � � V VGS = 0V, ID = 1.0mA ?BVDSS/?TJ Temperature Coefficient of Breakdown � 0.6 � V/�C Reference to 25�C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source � � 0.60 VGS = 12V, ID = 6.5A ? On-State Resistance � � 0.65 VGS = 12V, ID = 10.4A VGS(th) Gate Threshold Voltage 2.5 � 4.5 V VDS =

1.438. irg4cc58kb.pdf Size:41K _international_rectifier

1.439. irg4cc50wb.pdf Size:23K _international_rectifier

1.440. irgc50b120ub.pdf Size:43K _international_rectifier

1.441. irfk3dc50.pdf Size:163K _international_rectifier

1.442. irg4pc50kd.pdf Size:374K _international_rectifier

� mV/�C VCE = VGE, IC = 250�A gfe Forward Transconductance 17 24 � S VCE = 100V, IC = 30A ICES Zero Gate Voltage Collector Current � � 250 �A VGE = 0V, VCE = 600V � � 6500 VGE = 0V, VCE = 600V, TJ = 150�C VFM Diode Forward Voltage Drop � 1.3 1.7 V IC = 25A see figure 13 � 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge

1.443. irfpc50lc.pdf Size:154K _international_rectifier

akage �� 100 nA VGS = 20V Gate-to-Source Reverse Leakage �� -100 VGS = -20V Qg Total Gate Charge �� 84 ID = 11A Qgs Gate-to-Source Charge �� 18 nC VDS = 360V Qgd Gate-to-Drain ("Miller") Charge �� 36 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time �� 17 �� VDD = 300V tr Rise Time �� 32 �� ID = 11A ns td(off) Turn-Off Delay Time �� 41 �� RG = 6.2? tf Fall Time �� 26 �� RD = 30?, See Fig. 10 Between lead, LD Internal Drain Inductance �� 5.0 ��

1.444. irgc5b120ub.pdf Size:15K _international_rectifier

1.445. irgpc50m.pdf Size:109K _international_rectifier

S VCE = 100V, IC = 35A ICES Zero Gate Voltage Collector Current � � 250 �A VGE = 0V, VCE = 600V � � 2000 VGE = 0V, VCE = 600V, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 120 180 IC = 35A Qge Gate - Emitter Charge (turn-on) � 25 38 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 40 60 VGE = 15V td(on) Tu

1.446. irg4pc50w.pdf Size:157K _international_rectifier

� mV/�C VCE = VGE, IC = 1.0mA gfe Forward Transconductance U 27 41 � S VCE = 100 V, IC = 27A � � 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current �A � � 2.0 VGE = 0V, VCE = 10V, TJ = 25�C � � 5000 VGE = 0V, VCE = 600V, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 180 270 IC = 27A Qge Gate - Emitter Char

1.447. irgc50b60kb.pdf Size:15K _international_rectifier

1.448. irg4pc50s.pdf Size:164K _international_rectifier

-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 180 280 IC = 41A Qge Gate - Emitter Charge (turn-on) � 24 37 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 61 92 VGE = 15V td(on) Turn-On Delay Time � 33 � tr Rise Time � 30 � TJ = 25�C ns td(off) Turn-Off Delay Time � 650 980 IC = 41A, VCC = 480V tf Fall Time � 400 600 VGE = 1

1.449. irgmc50f.pdf Size:547K _international_rectifier

, IC = 250 �A gfe Forward Transconductance T 21 �� S VCE ? 15V, IC = 30A �� 50 VGE = 0V, VCE = 480V ICES Zero Gate Voltage Collector Current �A �� 2000 VGE = 0V, VCE = 480V, TJ = 125�C IGES Gate-to-Emitter Leakage Current �� 100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) �� 120 140 IC = 30A Qge Gate - Emitter Charge (turn-on) �� 15 35 nC VCC = 300V See F

1.450. irgc50b120kb.pdf Size:43K _international_rectifier

1.451. irg4bac50s.pdf Size:135K _international_rectifier

Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 180 280 IC = 41A Qge Gate - Emitter Charge (turn-on) � 24 37 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 61 92 VGE = 15V td(on) Turn-On Delay Time � 33 � tr Rise Time � 30 � TJ = 25�C ns td(off) Turn-Off Delay Time � 650 980 IC = 41A, VCC = 480V tf Fall Time � 400 600 VGE = 15V, RG = 5.0? Eon Turn-On Switching Loss � 0.72 � Energy losses include "tail" Eoff Turn-Off Switching Loss � 8.27 � mJ See Fig. 9,

1.452. irgpc50ud2.pdf Size:214K _international_rectifier

C = 25A See Fig. 13 � 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 110 140 IC = 27A Qge Gate - Emitter Charge (turn-on) � 17 21 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) � 53 70 See Fig. 8 td(on) Turn-On Delay Time � 73 � TJ = 25�C tr Rise Time � 71 � ns IC = 27A, VCC = 480V td(off) Turn-Off D

1.453. irg4pc50fd.pdf Size:211K _international_rectifier

ate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250�A ?VGE(th)/?TJ Temperature Coeff. of Threshold Voltage ---- -14 ---- mV/�C VCE = VGE, IC = 250�A gfe Forward Transconductance T 21 30 ---- S VCE = 100V, IC = 39A ICES Zero Gate Voltage Collector Current ---- ---- 250 �A VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150�C VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current ---- ---- �

1.454. irfk6hc50.pdf Size:162K _international_rectifier

1.455. irg4pc50s-p.pdf Size:144K _international_rectifier

less otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 180 280 IC = 41A Qge Gate - Emitter Charge (turn-on) � 24 37 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 61 92 VGE = 15V td(on) Turn-On Delay Time � 33 � tr Rise Time � 30 � TJ = 25�C ns td(off) Turn-Off Delay Time � 650 980 IC = 41A, VCC = 480V tf Fall Time � 400 600 VGE = 15V, RG = 5.0? Eon Turn-On Switching Loss � 0.72 � Energy losses include "tail" Eoff Turn-Of

1.456. irg4cc50fb.pdf Size:35K _international_rectifier

1.457. irgmic50u.pdf Size:318K _international_rectifier

Forward Transconductance ? 16 �� S VCE = 100V, IC = 27A ? ? ? �� 250 VGE = 0V, VCE = 480V �A ICES Zero Gate Voltage Collector Current �� 5000 VGE = 0V, VCE = 480V, TJ = 125�C nA IGES Gate-to-Emitter Leakage Current �� 100 VGE = �20 VFM Diode Forward Voltage Drop �� 1.7 IC = 27A V �� 1.5 IC = 27A , TJ = 125�C Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ��

1.458. irg4cc50kb.pdf Size:37K _international_rectifier

1.459. irgcc50me.pdf Size:19K _international_rectifier

1.460. irg4pc50k.pdf Size:115K _international_rectifier

IC = 30A � � 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current �A � � 2.0 VGE = 0V, VCE = 10V, TJ = 25�C � � 5000 VGE = 0V, VCE = 600V, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 200 300 IC = 30A Qge Gate - Emitter Charge (turn-on) � 25 38 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) �

1.461. irgpc50lc.pdf Size:154K _international_rectifier

1.462. irgpc50fd2.pdf Size:215K _international_rectifier

V IC = 25A See Fig. 13 � 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 110 170 IC = 39A Qge Gate - Emitter Charge (turn-on) � 20 30 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) � 50 75 See Fig. 8 td(on) Turn-On Delay Time � 70 � TJ = 25�C tr Rise Time � 110 � ns IC = 39A, VCC = 480V td(off) Turn-

1.463. irg4pc50u.pdf Size:147K _international_rectifier

10V, TJ = 25�C ---- ---- 5000 VGE = 0V, VCE = 600V, TJ = 150�C IGES Gate-to-Emitter Leakage Current ---- ---- �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 180 270 IC = 27A Qge Gate - Emitter Charge (turn-on) ---- 25 38 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 61 90 VGE = 15V td(on) Turn-On Delay Time ---- 32 ---- tr Rise Time ---- 20 ---- TJ

1.464. irgpc50s.pdf Size:108K _international_rectifier

ameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 120 150 IC = 41A Qge Gate - Emitter Charge (turn-on) � 16 23 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) � 52 90 VGE = 15V td(on) Turn-On Delay Time � 52 � TJ = 25�C tr Rise Time � 59 � ns IC = 41A, VCC = 480V td(off) Turn-Off Delay Time � 1200 1400 VGE = 15V, RG = 5.0? tf Fall Time � 500 700 Energy losses include "tail" Eon Turn-On Switching Loss � 0.35 � Eoff Turn-Off Switching Loss � 15 � mJ Se

1.465. irg4mc50f.pdf Size:142K _international_rectifier

0V, VCE = 480V ICES Zero Gate Voltage Collector Current �A �� 2000 VGE = 0V, VCE = 480V, TJ = 125�C IGES Gate-to-Emitter Leakage Current �� 100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) �� 290 IC = 30A Qge Gate - Emitter Charge (turn-on) �� 42 nC VCC = 480V See Fig. 8 Qgc Gate - Collector Charge (turn-on) �� 97 VGE = 15V td(on) Turn-On Delay Time ��

1.466. irfk4hc50.pdf Size:162K _international_rectifier

1.467. irg4bac50w.pdf Size:163K _international_rectifier

, IC = 1.0mA gfe Forward Transconductance � 27 41 � S VCE = 100 V, IC = 27A � � 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current �A � � 2.0 VGE = 0V, VCE = 10V, TJ = 25�C � � 5000 VGE = 0V, VCE = 600V, TJ = 150�C IGES Gate-to-Emitter Leakage Current � � �100 nA VGE = �20V Switching Characteristics @ TJ = 25�C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) � 180 270 IC = 27A Qge Gate - Emitter Charge (turn-on) � 24

1.468. irg4pc50ud.pdf Size:213K _international_rectifier

Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250�A ?VGE(th)/?TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/�C VCE = VGE, IC = 250�A gfe Forward Transconductance T 16 24 ---- S VCE = 100V, IC = 27A ICES Zero Gate Voltage Collector Current ---- ---- 250 �A VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150�C VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150�C IGES Gate-to-Emitter Leakage Current ---- ----

1.469. 2sc5617.pdf Size:103K _nec

AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.6 f = 1 MHz Mounted on Glass Epoxy PCB (1.08 cm2 ? 1.0 mm (t) ) 250 0.5 200 0.4 150 0.3 140 100 0.2 50 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 30 30 VCE = 1 V VCE = 2 V 25 25 20 20 15 15 10 10 5 5 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter V

1.470. 2sc5191.pdf Size:56K _nec

, f = 2.0 GHz - 1.5 - dB Note 2 Reverse Transfer Capacitance Cre VCB = 1 V, IE = 0 mA, f = 1.0 MHz - 0.75 0.85 pF Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB Marking T88 hFE Value 80 to 160 2 Data Sheet PU10523EJ01V0DS 2SC5191 TYPICAL CHARACTERISTICS (TA = +25�C, unless otherwise specified) TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLL

1.471. 2sc5336.pdf Size:47K _nec

SC5336 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 5.0 Mounted on Ceramic Substrate f = 1 MHz (16 cm2 ? 0.7 mm (t) ) 3.0 2.0 2.0 1.0 1.0 0.5 0.3 0 50 100 150 13 5 10 20 30 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. GAIN BANDWIDTH PRODUCT COLLECTOR CURRENT vs. COLLECTOR CURRENT 200 10 VCE = 10 V VCE = 1

1.472. 2sc5436.pdf Size:69K _nec

ollector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB Marking TN TP hFE Value 70 to 100 90 to 130 2 Data Sheet PU10104EJ01V0DS 2SC5436 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 1.0 f = 1 MHz Free Air 125 0.5 100 90 75 50 0.2 25 0.1 0 25 50 75 100 125 150 1 25 10 20 Ambient Temperature TA (?C) Collect

1.473. 2sc5408.pdf Size:50K _nec

10 0 1.0 2.0 3.0 1 2 5 10 20 50 100 IC - Collector Current - mA VCE - Collector to Emitter Voltage - V 2 I C - Collector Current - mA P T - Total Power Dissipation - mW h FE - DC Current Gain I C - Collector Current - mA 2SC5408 fT vs. IC characteristics |S21e|2 vs. IC characteristics 20 18 VCE = 2 V VCE = 2 V 16 f = 2 GHz f = 2 GHz 14 12 10 10 8 6 4 2 0 0 1 10 100 1 10 100 IC - Collector Current - mA IC - Collector Current - mA NF vs. IC characteristics

1.474. ne661m04_2sc5507.pdf Size:35K _nec

PT Total Power Dissipation mW 50 1.00 1.14 18.40 0.64 33 0.64 1.50 1.20 15.70 0.63 43 0.64 TJ Junction Temperature �C 150 2.00 1.29 14.20 0.62 50 0.62 TSTG Storage Temperature �C -65 to +150 2.50 1.40 13.20 0.61 59 0.55 3.00 1.55 12.50 0.60 67 0.45 Note: 1. Operation in excess of any one of these parameters may result VC = 2 V, IC = 1 mA in permanent damage. 0.50 1.12 21.70 0.69 13 0.57 0.90 1.15 19.50 0.66 26 0.56 1.00 1.16 19.10 0.65 30 0.55 1.50 1.23 16.50 0.64 37 0.69 2.00

1.475. 2sc5508.pdf Size:76K _nec

f = 2 GHz, � 1.1 1.5 dB ZS = Zopt Note 2 Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz � 0.18 0.24 pF Maximum Available Power Gain MAG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz � 19 � dB Maximum Stable Power Gain MSG Note 4 VCE = 2 V, IC = 20 mA, f = 2 GHz � 20 � dB Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz � 11 � dBm 3rd Order Intermodulation Distortion OIP3 VCE = 2 V, IC = 20 mA Note 5, f = 2 GHz � 22 � dBm Output Inter

1.476. 2sc5454.pdf Size:79K _nec

ollector Current - mA 2 Preliminary Data Sheet I C - Collector Current - mA P T - Total Power Dissipation - mW DC Current Gain - h FE I C - Collector Current - mA 2SC5454 GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT 16 14 VCE = 3 V VCE = 3 V f = 2 GHZ f = 2 GHZ 14 12 12 10 10 8 8 6 6 4 2 4 1 10 100 1 10 20 100 IC - Collector Current - mA IC - Collector Current - mA GAIN WITH MINIMUM NF/NOISE FIGURE REVERSE TRANSFER CA

1.477. ne856m13_2sc5614.pdf Size:19K _nec

EMITTER VOLTAGE COLLECTOR CURRENT 100 500 VCE = 10 V 300 80 200 60 100 70 50 40 30 20 20 10 0 2 4 6 8 10 12 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES � Headquarters � 4590 Patrick Henry Drive � Santa Clara, CA 95054-1817 � (408) 988-3500 � Telex 34-6393 � FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and

1.478. 2sc5007.pdf Size:53K _nec

king 34 hFE 80 to 160 2 2SC5007 TYPICAL CHARACTERISTICS (TA = 25 ?C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 20 Free Air VCE = 3 V 100 10 50 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � ?C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 200 VCE = 3 V 20 IB = 160 A � 100 140 A � 15 120 A � 50 100 A � 10 80 A � 60 �A 20

1.479. 2sc5674.pdf Size:100K _nec

the emitter grounded hFE CLASSIFICATION Rank FB Marking C5 hFE Value 50 to 100 2 Data Sheet PU10133EJ01V0DS 2SC5674 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.5 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.4 200 0.3 150 0.2 115 100 0.1 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Col

1.480. 2sc5651_ne688m23.pdf Size:19K _nec

OR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 1000 100 VCE = 2 V IB 50 �A step 450 �A 80 350 �A 60 100 250 �A 40 150 �A 20 IB = 50 �A 10 0 0.01 0.1 1 10 100 0 2 4 6 8 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 10 8 VCE= 3 V VCE = 3 V f = 2 GHz 7 f = 1 GHz GA 8 8 6 5 6 6 4 4 4 3 2 2 2 1 NF 0 0 0 1 1

1.481. 2sc5752.pdf Size:88K _nec

dB VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Linear Gain GL - 12.5 - dB Pin = -5 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) - 18.0 - dBm Pin = 7 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Collector Efficiency ?C - 55 - % Pin = 7 dBm Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MAG = (K � v (K2 � 1) ) v v v S12 hFE CLASSIFICATION Rank FB Marking R55 hFE Valu

1.482. 2sc5433.pdf Size:56K _nec

25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 2.0 f = 1 MHz Free Air 125 1.0 100 0.5 75 50 0.2 25 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 20 25 VCE = 3 V 20 � IB = 160 A � 140 A 15 � 120 A 10 � 100 A 10 � 80 A � 60 A 40 �A

1.483. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

mA GHz 3.0 4.5 4.5 NF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 1.1 1.4 1.4 1.3 1.4 VCE = 10 V, IC = 7 mA, f = 2 GHz dB 2.1 2.1 2.2 2.2 GA Associated Gain at VCE = 10 V, IC = 7 mA, f = 1 GHz dB 13 12.5 12 10 f = 2 GHz dB 10 7 6.5 6 |S21E|2 Insertion Power Gain at VCE = 10 V, IC = 20 mA, f = 1 GHz dB 11 13 12 12 9.5 f = 2 GHz dB 7 9 7 6 hFE Forward Current Gain2 at VCE = 10 V, IC = 20 mA 50 120 300 50 120 300 50 120 300 VCE = 3 V, IC = 7 mA 80 120 160 40 110 250 ICBO Colle

1.484. 2sc5179.pdf Size:57K _nec

E 70 to 140 2 2SC5179 CHARACTERISTICS CURVES (TA = 25 �C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 VCE = 2 V 200 40 30 100 20 10 30 mW 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 500 20 200 200 � A VCE = 2 V 180 � A 15 160 � A 100 140 � A 120 � A 50 10

1.485. 2sc5192.pdf Size:68K _nec

350 �s, Duty cycle ? 2 %, Pulsed 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE Classification Rank FB Marking T88 hFE 80 to 160 2 2SC5192 TYPICAL CHARACTERISTICS (TA = 25 �C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 100 VCE = 1 V 50 Free Air 20 200 10 5 2 1 0.5 100 0.2 0.1 0.05 0.02 0.01 050 100 150 0 0.5 1 Ambient Temperature TA (�C) Base to Emitter Voltage VBE (V

1.486. 2sc5009.pdf Size:59K _nec

82 hFE 75 to 150 2 2SC5009 TYPICAL CHARACTERISTICS (TA = 25 ?C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 50 VCE = 3 V Free Air 40 100 30 60 mW 20 50 10 0 50 100 150 0 0.5 1 TA � Ambient Temperature � ?C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 500 VCE = 3 V VCE = 3 V 200 IB = 20 200 A 180 A 100 160

1.487. 2sc5602.pdf Size:105K _nec

eet P15146EJ1V0DS00 2SC5602 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.5 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.4 200 0.3 150 0.2 100 0.1 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLT

1.488. 2sc5843.pdf Size:59K _nec

PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MSG = S12 hFE CLASSIFICATION Rank FB Marking zD hFE Value 200 to 400 2 Data Sheet PU10353EJ02V0DS 2SC5843 TYPICAL CHARACTERISTICS (TA = +25�C, unless otherwise specified) TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 250 0.3 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 200 0.2 150 100 0.1 80

1.489. 2sc5509.pdf Size:81K _nec

7 dB ZS = Zopt Note 2 Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz - 0.5 0.75 pF Maximum Available Power Gain MAG Note 3 VCE = 2 V, IC = 50 mA, f = 2 GHz - 14 - dB Maximum Stable Power Gain MSG Note 4 VCE = 2 V, IC = 50 mA, f = 2 GHz - 15 - dB Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz - 17 - dBm 3rd Order Intermodulation Distortion OIP3 VCE = 2 V, IC = 70 mA Note 5, f = 2 GHz - 27 - dBm Output Intercept Point Notes 1.

1.490. 2sc5455.pdf Size:79K _nec

- Collector to Emitter Voltage - V IC - Collector Current - mA 2 Preliminary Data Sheet I C - Collector Current - mA P T - Total Power Dissipation - mW DC Current Gain - h FE I C - Collector Current - mA 2SC5455 GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT 16 16 VCE = 3 V VCE = 3 V f = 2 GHz f = 2 GHz 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 IC - Collector Current - mA IC - Collector Curre

1.491. 2sc5185.pdf Size:50K _nec

86 hFE 70 to 140 2 2SC5185 CHARACTERISTICS CURVES (TA = 25 ?C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 V CE = 2 V Passive Air Cooling 200 40 30 100 20 90 mW 10 0 50 100 150 0 0.5 1.0 TA - Ambient Temperature - ?C VBE - Base to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 500 25 20 200 200 � A 180 � A VCE = 2 V 160 � A 15

1.492. 2sc5369.pdf Size:60K _nec

E = 1 V 5 5 0 0 1 10 100 1 10 100 Collector Current IC (mA) Collector Current IC (mA) 2 NF - IC CHARACTERISTICS S21e - f CHARACTERISTICS 6 VCE = 3 V, IC = 10 mA VCE = 3 V 30 VCE = 2 V, IC = 5 mA f = 2 GHz VCE = 1 V, IC = 3 mA 20 4 10 0 2 0 1 10 100 0.1 1.0 2.0 3.0 Collector Current IC (mA) Frequency f (GHz) Cre - VCB 4 f = 1 MHz 3 2 1 0 0 10 100 Collector to Base Voltage VCB (V) 3 2 Insertion Gain S 21 e (dB) Gain Bandwidth Product f T (GHz) 2 Noise Fig

1.493. 2sc5186.pdf Size:46K _nec

ulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank FB Marking 86 hFE Value 70 to 140 2 Data Sheet PU10213EJ01V0DS 2SC5186 TYPICAL CHARACTERISTICS (TA = +25� �C, unless otherwise specified) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 250 0.8 f = 1 MHz Free Air 200 0.6 150 0.4 100 90 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10

1.494. 2sc5618.pdf Size:96K _nec

CLASSIFICATION Rank EB FB Marking W1 W2 hFE Value 70 to 100 90 to 130 2 Data Sheet P15644EJ1V0DS 2SC5618 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.6 f = 1 MHz Mounted on Glass Epoxy PCB (1.08 cm2 ? 1.0 mm (t) ) 250 0.5 200 0.4 150 0.3 100 0.2 90 50 0.1 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature TA (?C) Collector to Bas

1.495. 2sc5754.pdf Size:85K _nec

0.5 GHz 16 20 - GHz 2 Insertion Power Gain ?S21e? VCE = 3 V, IC = 100 mA, f = 2 GHz 5.0 6.5 - dB Note 2 Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz - 1.0 1.5 pF Note 3 Maximum Available Power Gain MAG VCE = 3 V, IC = 100 mA, f = 2 GHz - 12.0 - dB VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz, Linear Gain GL - 12.0 - dB Pin = 0 dBm, 1/2 Duty VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) - 26.0 - dBm Pin = 15 dBm, 1/2 Duty VCE = 3.6 V

1.496. 2sc5435.pdf Size:55K _nec

) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 5.0 f = 1 MHz Free Air 125 2.0 100 1.0 75 0.5 50 0.2 25 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 50 30 VCE = 3 V � 200 A 40 � 180 A 20 � 160 A 30 � 140 A 120 �A 100 �A 20 80 �A 10 60

1.497. 2sc5015.pdf Size:49K _nec

� �C, unless otherwise specified) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 250 2 f = 1 MHz 200 1 150 0.5 100 0.2 50 0.1 0 25 50 75 100 125 150 1 2 5 10 20 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 10 10 1 1 0.1 0.1 0.01 0.01 0.001 0.001 0.0001 0.0001 0.4 0.5 0.6

1.498. 2sc5603.pdf Size:96K _nec

1V0DS 2SC5603 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.5 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.4 200 0.3 150 0.2 100 0.1 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR

1.499. 2sc5181.pdf Size:44K _nec

TION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 Passive air cooling VCE = 2 V 200 40 30 100 20 10 30 mW 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER COLLECTOR CURRENT 500 25 20 200 � 200 A VCE = 2 V � 180 A 15 � 160 A 100 � 140 A � 120 A 50 10 100 A VCE = 1 V � � 80 A 60 �A 5 � 40 A

1.500. 2sc5787.pdf Size:94K _nec

e 50 to 100 2 Data Sheet P15786EJ1V0DS 2SC5787 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 0.5 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 125 0.4 105 100 0.3 75 0.2 50 0.1 25 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs.

1.501. 2sc5193.pdf Size:55K _nec

rd pin of bridge. hFE Classification Rank FB Marking T88 hFE 80 to 160 2 2SC5193 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 100 VCE = 1 V 50 Free Air 20 200 10 5 2 1 0.5 100 0.2 0.1 0.05 0.02 0.01 0 50 100 150 0 0.5 1 Ambient Temperature TA (�C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 200 30 VCE =

1.502. 2sc5753.pdf Size:85K _nec

AG VCE = 3 V, IC = 30 mA, f = 2 GHz - 13.5 - dB VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Linear Gain GL - 13.0 - dB Pin = -5 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) - 18.0 - dBm Pin = 7 dBm VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz, Collector Efficiency ?C - 55 - % Pin = 7 dBm Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MAG = (K � v (K2 � 1) ) v v v S12 hFE C

1.503. 2sc5337.pdf Size:47K _nec

Distortion IM3 � 82.0 � dB Vin = 105 dB�V/75 ?, f1 = 190 MHz, f2 = 200 MHz, f = 2 ? f1 - f2 Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. RS = RL = 50 ?, tuned hFE CLASSIFICATION Rank QQ QR QS Marking QQ QR QS hFE Value 40 to 80 60 to 120 100 to 200 2 Data Sheet P10939EJ2V1DS 2SC5337 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 5.0

1.504. 2sc5606.pdf Size:67K _nec

S12 hFE CLASSIFICATION Rank FB Marking UA hFE 60 to 100 2 Data Sheet P14658EJ3V0DS 2SC5606 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 �C) � � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 200 1.0 f = 1 MHz Mounted on Glass Epoxy Board (1.08 cm2 ? 1.0 mm (t) ) 150 115 100 50 0 0.1 0 25 50 75 100 125 150 0.1 1.0 10.0 100.0 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLEC

1.505. 2sc5746.pdf Size:94K _nec

A = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 140 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 10 10 1 1 0.1 0.1 0.0

1.506. 2sc5507.pdf Size:91K _nec

cle ? 2% 2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MSG = S12 4. Collector current when P-1 is output hFE CLASSIFICATION Rank FB Marking T78 hFE 50 to 100 2 Preliminary Data Sheet P13864EJ1V0DS00 2SC5507 TYPICAL CHARACTERISTICS (TA = +25 �C) Thermal/DC Characteristics Total Power Dissipation vs. Ambient Temperature, Case Temperature Collector Current vs. DC Base Voltage

1.507. 2sc5800.pdf Size:104K _nec

ata Sheet P15660EJ1V0DS 2SC5800 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMIT

1.508. 2sc5431.pdf Size:51K _nec

� � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 1.00 f = 1 MHz Free Air 125 0.50 100 75 50 0.20 25 0.10 0 25 50 75 100 125 150 1 10 100 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 24 24 VCE = 5 V IB = 120 �A � 100 A 16 16 � 80 A 60 A � 8 8 40 A � 20 A � 0 0.2 0.4 0.6 0.8 1.0 0 2 4 6

1.509. 2sc5012_2sc5007_2sc4227_2sc3583_2sc3604_2sc4094_ne681.pdf Size:218K _nec

mA, f = 1 GHz dB 17 13 15 14 13 f = 2 GHz dB 9 11 9 8 7.5 hFE Forward Current Gain2 at VCE = 8 V, IC = 20 mA 50 100 250 50 100 250 VCE = 3 V, IC = 7 mA 80 160 40 240 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA A 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA A 1.0 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.45 0.9 0.45 0.9 VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.2 0.7 0.25 0.8 RTH (J-A) Thermal Resistance (Junction to

1.510. 2sc5737.pdf Size:97K _nec

TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 90 0.2 50 0 25 50 75 100 125 150 0 1 2 3 4 5 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 30 30 VCE = 1 V VCE = 2 V 20 20 10 10 0 0.2 0.4 0

1.511. 2sc5005.pdf Size:47K _nec

ECTOR CURRENT vs. GAIN BANDWIDTH PRODUCT vs. BASE TO EMITTER COLLECTOR CURRENT 24 10 VCE = 5 V VCE = 5 V IC = 5 mA 8 16 6 4 8 2 0 0 0.2 0.4 0.6 0.8 1.0 0.5 1 2 5 10 20 50 IC � Collector Current � mA VBE � Base to Emitter Voltage � V INSERTION POWER GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 14 30 VCE = 5 V f = 1 GHz 12 IB = 160 m A 10 20 m 140 A 8 120 A m m 100 A 6 80 A m 10 60 A m 4 40 m A 2 m 20 A 0 0 2

1.512. 2sc5650_ne681m23.pdf Size:18K _nec

20 IB = 70 �A 0 10 0.1 1.0 10.0 100.0 0 3 6 9 12 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCTvs. NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 8 10 20 VCE = 3 V 7 f = 1 GHz 8 GA 16 6 5 6 12 4 4 8 3 2 2 4 1 VCE = 3 V NF f = 1 GHz 0 0 0 1 10 100 1 10 100 Collector Current, IC (mA) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA E

1.513. 2sc5652_ne685m23.pdf Size:18K _nec

CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 50 1000 IB 40 �A step VCE = 3 V 400 �A 40 30 100 200 �A 20 10 IB = 40 �A 0 10 0 2 4 6 8 0.001 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 14 10 20 VCE = 3 V VCE = 3 V f = 2 GHz f = 2 GHz 12 GA 8 16 10 6 12 8 6 4 8 4 2 4 2 NF 0 0 0 100 1 10 1 10 100 Collector

1.514. 2sc5736.pdf Size:125K _nec

ed to the guard pin hFE CLASSIFICATION Rank FB Marking TX hFE Value 100 to 145 2 Data Sheet P15437EJ1V0DS 2SC5736 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector

1.515. ne58219_2sc5004.pdf Size:1827K _nec

ctor Current � mA TA � Ambient Temperature � �C COLLECTOR CURRENT vs. GAIN BANDWIDTH PRODUCT vs. BASE TO EMITTER COLLECTOR CURRENT 10 24 VCE = 5 V VCE = 5 V f = 1 GHz 8 16 6 4 8 2 0 0 0.2 0.4 0.6 0.8 1.0 0.5 1 2 5 10 20 50 IC � Collector Current � mA VBE � Base to Emitter Voltage � V INSERTION POWER GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 30 14 VCE = 5 V f = 1 GHz IB = 120 A 12 100 A 10 20 80 A 8 60 A 6 10 40 A 4 20 A

1.516. 2sc5194.pdf Size:65K _nec

3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE Classification Rank FB Marking T88 hFE 80 to 160 2 2SC5194 TYPICAL CHARACTERISTICS (TA = 25 �C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 100 VCE = 1 V 50 Free Air 20 200 10 5 2 1 0.5 100 0.2 0.1 0.05 0.02 0.01 050 100 150 0 0.5 1 Ambient Temperature TA (�C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. DC CURENT GAIN vs. COLLEC

1.517. 2sc5006.pdf Size:52K _nec

24 hFE 80 to 160 2 2SC5006 TYPICAL CHARACTERISTICS (TA = 25 ?C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 20 Free Air VCE = 3 V 100 10 50 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � ?C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 200 IB = 160 A � VCE = 3 V 140 A � 20 120 A � 100 100 A � 15 50 80 �A 10 60 �A 40 A � 20

1.518. 2sc5616_ne688m13.pdf Size:19K _nec

device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25�C) COLLECTOR CURRENT vs. D.C. CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 200 30 VCE = 1 V 200 �A 25 180 �A 160 �A 20 140 �A 120 �A 15 100 100 �A 80 �A 10 60 �A 40 �A 5 IB = 20 �A 0 0 5 7 1 50 0 2.5 0.1 0.2 0.5 2 5 10 20 100 Collector to Emmiter Voltage, VCE (V) Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 1 V 50 20

1.519. 2sc5183.pdf Size:60K _nec

terminal are connected to the guard terminal of the bridge. hFE Class Class FB Marking T86 hFE 70 to 140 2 2SC5183 CHARACTERISTICS CURVES (TA = 25 ?C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 200 50 VCE = 2 V 40 30 100 90 mW 20 10 0 50 100 150 0 0.5 1.0 TA - Ambient Temperature - �C VBE - Base to Emitter Voltage - V DC CURRENT GAIN vs. COLLECTOR TO CURRENT vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOL

1.520. 2sc5655.pdf Size:93K _nec

AL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 80 80 60 60 40 40 20 20 0 0.2 0.4 0.6 0.8 1.0

1.521. 2sc5289.pdf Size:114K _nec

lector to Emitter Voltage - V 3 I C - Collector Current - mA I C - Collector Current - mA 2SC5289 S-Parameters (VCE = 3.0 V, IC = 60 mA) FREQUENCY S11 S21 S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 1 500.000 000 810.84 mU 138.58 1.9411 U 48.639 106.35 mU 46.46 583.53 mU 159.88 1 600.000 000 813.96 mU 133.87 1.8066 U 45.93 110.68 mU 44.993 590.28 mU 158.28 1 700.000 000 816.5 mU 131.39 1.6922 U 43.227 116.71 mU 43.52 592.75 mU 156.45 1 800.000 000 820.32 mU 128.91 1.594

1.522. 2sc5437.pdf Size:60K _nec

o base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB Marking TS TT hFE Value 80 to 110 100 to 145 2 Data Sheet PU10105EJ01V0DS 2SC5437 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 1.0 f = 1 MHz Free Air 125 0.5 100 75 50 0.2 25 0.1 0 25 50 75 100 125 150 1 10 100 Ambient Temperature TA (?C) Collector to Base Volt

1.523. 2sc5409.pdf Size:39K _nec

40 �A IB = 20 �A 10 0 1.0 2.0 3.0 1 2 5 10 20 50 100 IC - Collector Current - mA VCE - Collector to Emitter Voltage - V 2 I C - Collector Current - mA P T - Total Power Dissipation - mW h FE - DC Current Gain I C - Collector Current - mA 2SC5409 fT vs. IC characteristics |S21e|2 vs. IC characteristics 20 18 VCE = 2 V VCE = 2 V 16 f = 2 GHz f = 2 GHz 14 12 10 10 8 6 4 2 0 0 1 10 100 1 10 100 IC - Collector Current - mA IC - Collector Current - mA NF vs. IC

1.524. 2sc5600.pdf Size:98K _nec

LASSIFICATION Rank FB Marking TV hFE Value 80 to 160 2 Data Sheet P14999EJ1V0DS00 2SC5600 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25 �C) � � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V

1.525. 2sc5677.pdf Size:100K _nec

T TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.2 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 1.0 200 0.8 150 0.6 140 100 0.4 50 0.2 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 80 80 60 60 40 40 20 20 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)

1.526. 2sc5013.pdf Size:44K _nec

to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 500 VCE = 6 V IB = � A 200 200 180 � A 20 � A 160 100 � A 140 � A 120 � A 100 50 10 � A 80 � A 60 20 � A 40 � A 20 10 0 2 4 6 8 10 12 1 2 5 10 20 50 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA GAIN BANDWIDTH PRODUCT vs. INSERTION POWER GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 12

1.527. 2sc5745.pdf Size:118K _nec

E vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 80 80 60 60 40 40 20 20 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VB

1.528. 2sc5008.pdf Size:51K _nec

to 160 2 2SC5008 TYPICAL CHARACTERISTICS (TA = 25 ?C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 20 Free Air VCE = 3 V 100 10 50 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 200 VCE = 3 V � IB = 160 A � 20 140 A 100 � 120 A 15 100 A � 50 � 80 A 10 � 60 A � 40 A 20 5 � 2

1.529. 2sc5180.pdf Size:46K _nec

ase terminal are connected to the guard terminal of the bridge. hFE class Class FB Marking T84 hFE 70 to 140 2 2SC5180 CHARACTERISTICS CURVES (TA = 25 �C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 200 50 VCE = 2 V Passive air cooling 40 30 100 20 30 mW 10 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V DC CURRENT GAIN vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER

1.530. 2sc5012.pdf Size:43K _nec

to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 500 IB = 200 � A VCE = 8 V 180 � A � A 160 200 � A 140 20 � A 120 100 � A 100 50 � A 80 10 � A 60 � A 40 20 � A 20 10 0 2 4 6 8 10 12 1 10 100 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA GAIN BANDWIDTH PRODUCT vs. INSERTION POWER GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 10 20 VCE =

1.531. 2sc5751.pdf Size:78K _nec

AG VCE = 3 V, IC = 20 mA, f = 2 GHz - 16.0 - dB VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Linear Gain GL - 15.5 - dB Pin = -10 dBm VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) - 15.0 - dBm Pin = 1 dBm VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Collector Efficiency ?C - 50 - % Pin = 1 dBm Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MAG = (K � v (K2 � 1) ) v v v S12 hFE CLA

1.532. 2sc5801.pdf Size:33K _nec

1.533. 2sc5786.pdf Size:95K _nec

CATION Rank FB Marking UE hFE Value 50 to 100 2 Data Sheet P15785EJ1V0DS 2SC5786 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 0.5 Mounted on Glass Epoxy PCB f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 125 0.4 105 100 0.3 75 0.2 50 0.1 25 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECT

1.534. 2sc5761.pdf Size:75K _nec

MSG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz 18.0 20.0 - dB - 12.0 - dBm Gain 1 dB Compression Output Power PO (1 dB) VCE = 2 V, IC = 20 mA, f = 2 GHz 3rd Order Intermodulation Distortion - 22.0 - dBm OIP3 VCE = 2 V, IC = 20 mA, f = 2 GHz Output Intercept Point Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MSG = S12 hFE CLASSIFICATION Rank FB Marking T16 hFE Value 200 to 400 2 Data Sheet PU10212EJ02V0DS

1.535. 2sc5434.pdf Size:56K _nec

= +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 1.0 f = 1 MHz Free Air 125 0.5 100 75 50 0.2 25 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 20 25 VCE = 3 V IB = 160 A � 140 �A 20 120 �A 15 100 �A 10 80 �A 10 60 �A 40 A � 5 20 A

1.536. 2sc5599.pdf Size:101K _nec

n hFE CLASSIFICATION Rank FB Marking TV hFE Value 80 to 160 2 Data Sheet P15145EJ1V0DS00 2SC5599 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.0 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.8 200 0.6 150 0.4 100 0.2 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage

1.537. 2sc5750.pdf Size:78K _nec

VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Linear Gain GL - 14.5 - dB Pin = -10 dBm VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Gain 1 dB Compression Output Power PO (1 dB) - 15.0 - dBm Pin = 1 dBm VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Collector Efficiency ?C - 50 - % Pin = 1 dBm Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded S21 3. MAG = (K � v (K2 � 1) ) v v v S12 hFE CLASSIFICATION Rank FB Marking R54 hFE Value 75

1.538. 2sc5288.pdf Size:117K _nec

1.0 mA � 500 A 01 234 VCE - Collector to Emitter Voltage - V 3 I C - Collector Current - mA I C - Collector Current - mA 2SC5288 S-Parameters (VCE = 3.0 V, IC = 10 mA) FREQUENCY S11 S21 S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 1 500.000 000 719.74 mU 145.59 2.5304 U 49.912 92.605 mU 32.197 269.43 mU �162.09 1 600.000 000 725.17 mU 142.26 2.3524 U 46.6 96.439 mU 32.428 277.83 mU �164.53 1 700.000 000 730.14 mU 139.35 2.2024 U 43.606 98.551 mU 31.724 285.95 mU �167.1

1.539. 2sc5704.pdf Size:101K _nec

20 mA, f = 2 GHz - 11.0 - dBm 3rd Order Intermodulation Distortion OIP3 VCE = 2 V, IC = 20 mA, f = 2 GHz - 22.0 - dBm Output Intercept Point Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MAG = (k � v (k2 � 1) ) v v v S12 S21 4. MSG = S12 hFE CLASSIFICATION Rank FB Marking zC hFE Value 50 to 100 2 Data Sheet P15364E

1.540. 2sc5004.pdf Size:47K _nec

�C COLLECTOR CURRENT vs. GAIN BANDWIDTH PRODUCT vs. BASE TO EMITTER COLLECTOR CURRENT 10 24 VCE = 5 V VCE = 5 V f = 1 GHz 8 16 6 4 8 2 0 0 0.2 0.4 0.6 0.8 1.0 0.5 1 2 5 10 20 50 IC � Collector Current � mA VBE � Base to Emitter Voltage � V INSERTION POWER GAIN vs. COLLECTOR CURRENT vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE 30 14 VCE = 5 V f = 1 GHz IB = 120 A 12 100 A 10 20 80 A 8 60 A 6 10 40 A 4 20 A 2 0 0 2 4 6 8 10 0.5 1 2 5 10 20 50

1.541. 2sc5014.pdf Size:49K _nec

COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 500 VCE = 3 V 200 IB = 20 200 � A 100 � 180 A � 160 A � 140 A 50 � 120 A 10 100 A � � 80 A � 60 A 20 � 40 A 20 A � 10 0 1 2 5 10 20 50 100 5 10 IC - Collector Current - mA VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN vs. vs. COLLECTOR CURRENT COLLECTOR CURRENT 14 14 VCE = 3 V VCE = 3 V f = 2 GHZ f = 2 GHZ 12 12 10 10 8 8 6

1.542. 2sc5615_ne681m13.pdf Size:19K _nec

10 0 2 4 6 8 10 1 2 3 5 7 10 20 30 50 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES � Headquarters � 4590 Patrick Henry Drive � Santa Clara, CA 95054-1817 � (408) 988-3500 � Telex 34-6393 � FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) � Internet: http://WWW.CEL.COM 2/09/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE Collecto

1.543. 2sc5178.pdf Size:82K _nec

*2. Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal of the bridge. hFE Class Class FB Marking T84 hFE 70 to 140 2 2SC5178 CHARACTERISTICS CURVES (TA = 25 �C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 VCE = 2 V 200 40 30 100 20 10 30 mW 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC

1.544. 2sc5177.pdf Size:56K _nec

Class Class FB Marking T84 hFE 70 to 140 2 2SC5177 CHARACTERISTICS CURVES (TA = 25 �C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 VCE = 2 V 200 40 30 100 20 10 30 mW 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � �C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 500 20 200 200 � A VCE = 2 V 180 � A 15 160 �

1.545. 2sc5195.pdf Size:54K _nec

RISTICS (TA = 25 �C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 100 VCE = 1 V Free Air 10 100 1 50 0.1 0.01 050 100 150 0 0.5 1 Ambient Temperature TA (�C) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. DC CURENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 200 VCE = 1 V 200 �A 25 180 �A 160 �A 20 140 �A 120 �A 15 100 100 �A 80 �A 10 60 �A 40 �A 5 IB = 20 �A 0 0 2.5 0.1 0.2 0.5 1 2 5 10

1.546. 2sc5668.pdf Size:87K _nec

VCB = 2 V, IE = 0 mA, f = 1 MHz � 0.24 0.30 pF Note 3 Maximum Available Power Gain MAG. VCE = 2 V, IC = 20 mA, f = 2 GHz � 12.5 � dB Note 4 Maximum Stable Power Gain MSG. VCE = 2 V, IC = 20 mA, f = 2 GHz � 13.5 � dB Note 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2 % 2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MAG. = (k � v (k2 � 1) ) v v v S12 S21 4. MSG. = S12 hFE CL

1.547. 2sc5010.pdf Size:52K _nec

FE 75 to 150 2 2SC5010 TYPICAL CHARACTERISTICS (TA = 25 ?C) TOTAL POWER DISSIPATION vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 150 50 VCE = 3 V Free Air 40 100 30 20 50 10 0 50 100 150 0 0.5 1.0 TA � Ambient Temperature � ?C VBE � Base to Emitter Voltage � V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 30 500 VCE = 3 V IB = 200 � A 200 180 � A 20 160 � A 140 � A 100 120 �

1.548. 2sc5649_ne856m23.pdf Size:19K _nec

COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 120 1000 IB = 40 �A step VCE = 3 V 400 �A 100 80 60 100 40 200 �A 20 IB = 40 �A 0 10 0 2 4 6 8 10 12 14 0.01 0.1 1 10 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 8 10 20 VCE = 3 V VCE = 3 V 7 f = 1 GHz f = 2 GHz 8 16 6 GA 5 6 12 4 4 8 3 2 2 4 1 NF 0 0 0 1 10 100 1 10 100 Collector Current, I

1.549. 2sc5182.pdf Size:56K _nec

2 2SC5182 CHARACTERISTICS CURVES (TA = 25 ?C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 VCE = 2 V Passive Air Cooling 200 40 30 100 20 90 mW 10 0 50 100 150 0 0.5 1.0 TA - Ambient Temperature - �C VBE - Base to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 25 500 20 200 200 � A 180 � A VCE = 2 V 160 � A 15 100 140 � A 12

1.550. 2sc5667.pdf Size:86K _nec

.30 pF Note 3 Maximum Available Power Gain MAG. VCE = 2 V, IC = 20 mA, f = 2 GHz � 12.5 � dB Note 4 Maximum Stable Power Gain MSG. VCE = 2 V, IC = 20 mA, f = 2 GHz � 13.5 � dB Note 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2 % 2. Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when the emitter is connected to the guard pin S21 3. MAG. = (k � v (k2 � 1) ) v v v S12 S21 4. MSG. = S12 hFE CLASSIFICATION Rank FB Marking UB hFE V

1.551. 2sc5653_ne687m23.pdf Size:18K _nec

GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 1000 60 IB 40 �A step VCE = 1 V 400 �A 50 40 100 30 200 �A 20 10 IB = 40 �A 0 10 0 1 2 3 4 0.01 0.1 1 10 100 Collector Current, IC (mA) Collector to Emitter Voltage, VCE (V) GAIN BANDWIDTH PRODUCT vs. NOISE FIGURE/ASSOCIATED GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT 16 5 20 VCE = 1 V VCE = 1 V f = 2 GHz f = 1 GHz Ga 4 16 12 3 12 8 2 8 NF 4 1 4 0 0 0 1 10 100 1 10 100 Collector Current, IC (mA) C

1.552. 2sc5011.pdf Size:57K _nec

a Sheet PU10515EJ01V0DS 2SC5011 TYPICAL CHARACTERISTICS (TA = +25�C, unless otherwise specified) TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 250 5.0 f = 1 MHz Free Air 200 2.0 150 1.0 0.5 100 50 0.2 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 50 30 IB =

1.553. 2sc5432.pdf Size:56K _nec

= +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 150 2.0 f = 1 MHz Free Air 125 1.0 100 0.5 75 50 0.2 25 0.1 0 25 50 75 100 125 150 1 2 5 10 20 50 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR TO EMITTER VOLTAGE 20 25 IB = 160 �A VCE = 3 V � 140 A � 20 120 A � 100 A 15 � 80 A 10 10 60 A � 40 A

1.554. 2sc5184.pdf Size:58K _nec

86 hFE 70 to 140 2 2SC5184 CHARACTERISTICS CURVES (TA = 25 ?C) TOTAL POWER DISSIPATION COLLECTOR CURRENT vs. vs. AMBIENT TEMPERATURE BASE TO EMITTER VOLTAGE 50 VCE = 2 V 200 40 30 90 mW 100 20 10 0 50 100 150 0 0.5 1.0 TA - Ambient Temperature - �C VBE - Base to Emitter Voltage - V COLLECTOR CURRENT vs. DC CURRENT GAIN vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT 500 25 20 200 200 � A 180 � A VCE = 2 V 160 � A 15 100 140 � A 120 � A

1.555. 2sc5338.pdf Size:51K _nec

Vin = 105 dB�V/75 ?, VCE = 10 V � -83 � f = 2 ? 190 - 200 MHz Notes 1. Pulse measurement: PW ? 350 �s, Duty Cycle ? 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank SH SF SE Marking SH SF SE hFE Value 50 to 100 80 to 160 125 to 250 2 Data Sheet P10940EJ2V0DS 2SC5338 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAG

1.556. 2sc5676.pdf Size:97K _nec

se specified, TA = +25� �C) � � TOTAL POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 1.2 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 1.0 200 0.8 150 0.6 100 0.4 50 0.2 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 100 100 VCE = 1 V VCE = 2 V 80 80 60 6

1.557. 2sc5656.pdf Size:94K _nec

POWER DISSIPATION REVERSE TRANSFER CAPACITANCE vs. AMBIENT TEMPERATURE vs. COLLECTOR TO BASE VOLTAGE 300 0.5 Mounted on Glass Epoxy Board f = 1 MHz (1.08 cm2 ? 1.0 mm (t) ) 250 0.4 200 0.3 150 0.2 100 0.1 50 0 25 50 75 100 125 150 0 2 4 6 8 10 Ambient Temperature TA (?C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE 35 35 VCE = 1 V VCE = 2 V 30 30 25 25 20 20 15 15 10 10 5 5 0 0.2 0.4 0.6

1.558. ksc5086.pdf Size:20K _samsung

1.559. ksc5027.pdf Size:24K _samsung

1.560. ksc5021p.pdf Size:72K _samsung

1.561. ksc5030pwd.pdf Size:24K _samsung

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1.569. ksc5338d.pdf Size:153K _samsung

ORWARD CURRENT (AMP) SWITCHING TIM E trr,REVERSE RECOVERY (ns) KSC5338D NPN SILICON TRANSISTOR

1.570. ksc5337f.pdf Size:26K _samsung

1.571. ksc5338.pdf Size:23K _samsung

1.572. ksc5027f.pdf Size:74K _samsung

1.573. ksc5338f.pdf Size:23K _samsung

1.574. 2sc5659.pdf Size:140K _rohm

1 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current ( ) VCE=5V Ta=25�C IC/IB=10 200 0.2 0.2 0.1 100 0.1 IC/IB=50 20 50 0.05 Ta=100�C 0.05 25�C 10 -55�C 20 0.02 0.02 10 0.01 0.01 0.2 0.5 1 2 5 10 20 50 100 0.2 0.5 1

1.575. 2sc5826.pdf Size:60K _rohm

1 1 VCE=5V VCE=3V VCE=2V Ta=125�C IC / IB=20 / 1 Ta=25�C IC / IB=10 / 1 Ta= -40�C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collector Current (??) Voltage vs. Collector Current (?) Voltage vs. Collector Current (??) 2/3 SWITCHING TIME : (ns) DC CURRENT GAIN :

1.576. 2sc5866.pdf Size:929K _rohm

collector Fig.3 DC current gain vs. collector current current 10 10 10 Ta=25�C IC/IB=10/1 IC/IB=10/1 Ta= -40�C 1 1 1 Ta=125�C Ta=25�C Ta=125�C 0.1 0.1 0.1 Ta=25�C IC/IB=20/1 IC/IB=10/1 Ta= -40�C 0.01 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage Fig.4 Collector-emitter saturation voltage Fig.5 Collector-emitter saturation volt

1.577. 2sa1900_2sc5053.pdf Size:47K _rohm

s of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0

1.578. 2sc5824.pdf Size:934K _rohm

d emitter propagation Fig.2 DC current gain vs. collector current characteristics current 10 10 10 Ta=25�C IC/IB=10/1 IC/IB=10/1 Ta=125�C 1 1 Ta= -40�C Ta=100�C Ta=25�C 1 0.1 0.1 IC/IB=20/1 Ta=25�C Ta=125�C IC/IB=10/1 Ta=100�C Ta= -40�C 0.01 0.01 0.1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage Fig.4 Collector-emitter saturation voltage

1.579. 2sc5147.pdf Size:51K _rohm

1.580. 2sc5526.pdf Size:52K _rohm

1.581. 2sc5001.pdf Size:66K _rohm

IC/IB=80 20 200 20 50 10 100 10 20 5 50 5 2 20 2 1 10 1 -10m -100m -1 -10 0.05 0.1 0.2 0.5 1 2 5 10 20 50 10m 20m 50m 100m 200m 500m 1 2 5 10 20 EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product Fig.6 Collector output capacitance Fig.4 Collector-emitter saturation voltage vs. emitter current vs. collector-base voltage vs. collector current 100 Ta=25�C 50 20 10 5 2 1 500m 200m 100m 50m 20

1.582. 2sc5103.pdf Size:164K _rohm

ter propagation characteristics Fig.3 DC current gain vs. collector current 10000 10 1000 IC/IB=20 Ta=25�C Ta=25�C 5000 IE=0A 5 500 VCE=10V f=1MHz 2000 2 200 Ta= -25�C 1000 1 100 500 0.5 VBE(sat) 50 100�C 25�C 200 0.2 20 100 0.1 10 50 0.05 5 Ta=100�C VCE(sat) 0.02 25�C 20 2 -25�C 10 0.01 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10 20 50 100 -0.001-0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1 COLLECTOR CURRENT : IC (A ) COLLECTOR TO BASE

1.583. 2sc5575.pdf Size:52K _rohm

1.584. 2sc5876.pdf Size:928K _rohm

rrent current 10 10 10 Ta=25�C IC/IB=10/1 IC/IB=10/1 Ta= -40�C 1 1 1 Ta=125�C Ta=25�C Ta=125�C IC/IB=20/1 0.1 0.1 0.1 Ta=25�C IC/IB=10/1 Ta= -40�C 0.01 0.01 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.6 Base-emitter saturation voltage Fig.4 Collector-emitter saturation voltage Fig.5 Collector-emitter saturation voltage vs. collector current vs. collector current vs. collecto

1.585. 2sc5730k.pdf Size:62K _rohm

Time Fig.3 DC Current Gain vs. Fig.1 Safe Operating Area Collector Current (?) 1000 10 10 Ta=25�C Ta=25�C IC / IB=10 / 1 100 1 1 VCE=5V Ta=100�C IC / IB=20 / 1 VCE=3V Ta=25�C IC / IB=10 / 1 VCE=2V Ta= -40�C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collecto

1.586. 2sc5511.pdf Size:51K _rohm

1.587. 2sc5865.pdf Size:931K _rohm

COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Switching Time Fig.3 DC current gain Fig.1 Typical output characteristics vs. collector current ( ? ) 1000 10 10 IC/IB=10/1 Ta=25�C Ta=25�C VCE=5V 1 VCE=2V VCE=3V 1 100 Ta=125�C IC/IB=100/1 0.1 10 0.1 Ta=25�C IC/IB=20/1 Ta= -40�C IC/IB=10/1 0.01 0.01 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter sa

1.588. 2sc5880.pdf Size:87K _rohm

1 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Collector Current (?) Voltage vs. Collector Current (??) Voltage vs. Collecter Current Rev.B 2/3 DC CURRENT GAIN : h FE DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) COLLECTOR SATURATION V

1.589. umc5n.pdf Size:106K _rohm

1.590. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

2 20 10 0.1 10 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter saturation voltage Fig.3 Capacitance vs. reverse bias voltage vs. collector current 5000 Ta=25�C Ta=25�C 50 25 VCE=10V VCE=10V IC=10mA 20 2000 20 1000 15 10 500 5 10 5 200 2 Ta=25�C VCE=10V 0 100 f=31.8MHz 0.1 0.

1.591. 2sc5659_2sc4618_2sc4098_2sc2413k.pdf Size:140K _rohm

1.592. 2sc5161.pdf Size:74K _rohm

bias safe operating area Fig.3 Grounded emitter output Fig.2 Grounded emitter propagation characteristics characteristics COLLECTOR CURRENT : I C (A) COLLECTOR CURRENT : I C (A) COLLECTOR CURRENT : I C (A) 2SC5161 Transistors 1000 10 1000 Ta=25?C Ta=25?C Ta=25?C 500 5 500 200 2 200 100 Ta=100?C 1 100 25?C 50 0.5 50 -25?C 20 IC/IB=10 0.2 20 10 0.1 10 VCE=10V 5 5 5 5V 0.05 2 0.02 2 1 0.01 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05

1.593. 2sc5916.pdf Size:48K _rohm

V VCE=3V Ta=125�C 10 0.1 0.1 Ta=25�C IC/IB=20/1 Ta=-40�C IC/IB=10/1 0.01 0.01 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage current vs. collector current vs. collector current 2/3 SWITCHING TIME (ns) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) VOLTAGE

1.594. 2sc5574.pdf Size:52K _rohm

1.595. 2sc5274.pdf Size:20K _rohm

1.596. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

.25 0.1Min. 1.6 2.8 0.3Min. 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Data Sheet ?Electric characteristics curves 500 500 5.0 Ta=25�C Ta=25�C VCE=10V 200 200 2.0 100 100 1.0 50 50 0.5 IC/IB=10 20 20 IC/IB=2 0.2 Ta=25�C VCE=10V 10 10 0.1 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.1 DC current gain vs. collector current Fig.2 Collector-emitter sat

1.597. 2sa1964_2sc5248.pdf Size:38K _rohm

1.598. 2sc5585_2sc5663.pdf Size:68K _rohm

( ? ) 1000 10000 1000 Ta = 25�C IC/IB = 20 500 5000 500 VCE = 2V Ta = -40�C Ta = 25�C 25�C Pulsed 200 2000 200 125�C 100 1000 100 50 500 50 IC/IB = 50 20 20 200 20 10 10 100 10 5 5 50 2 2 20 1 1 10 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.6 Collector output capacitance Fig.4 Collector-emitter saturation voltage Fig.5 B

1.599. 2sc5532.pdf Size:46K _rohm

1.600. 2sc5060.pdf Size:52K _rohm

1.601. 2sc5868.pdf Size:929K _rohm

ig.2 DC Current Gain vs. Fig.3 DC Current Gain vs. Collector Current (?) Collector Current (??) 10 10 10 IC / IB=10 / 1 IC / IB=10 / 1 Ta=25�C 1 1 1 Ta=125�C IC / IB=20 / 1 Ta=125�C Ta=25�C IC / IB=10 / 1 Ta=25�C Ta= -40�C Ta= -40�C 0.1 0.1 0.1 0.01 0.01 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitte

1.602. 2sc5531.pdf Size:51K _rohm

1.603. 2sc5576.pdf Size:49K _rohm

1.604. 2sa1834_2sc5001.pdf Size:50K _rohm

1.605. 2sc5875.pdf Size:98K _rohm

25�C IC / IB=10 / 1 Ta= -40�C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collector Current (??) Voltage vs. Collector Current (?) Voltage vs. Collector Current (??) 2/3 SWITCHING TIME : (ns) DC CURRENT GAIN : h FE COLLECTOR CURRENT : I C (A) DC CURRENT GAIN : h

1.606. umc5n_fmc5a_c5_sot23-5_sot353.pdf Size:107K _rohm

1.607. 2sc5658.pdf Size:77K _rohm

106 TL T2L TP Basic ordering 3000 3000 3000 8000 5000 Type hFE unit (pieces) 2SC2412K QRS - - - - 2SC4081 QRS - - - - 2SC4617 QRS - - - - 2SC5658 QRS - - - - 2SC1740S QRS - - - - hFE values are classified as follows : Item Q R S hFE 120~270 180~390 270~560 Electrical characterristic curves 0.50mA 100 50 10 Ta=25�C 30�A VCE=6V Ta=25�C 27�A 20 80 8 24�A 0.30mA 10 21�A 0.25mA 5 60 6 18�A 0.20mA 15�A 2 0.15mA 12�A 40 4 1 9�A 0.10mA 0.5 6�A 20 2 0.05mA

1.608. 2sc5825.pdf Size:167K _rohm

tor Current (?) Collector Current (??) 10 10 10 IC / IB=10 / 1 Ta=25�C IC / IB=10 / 1 1 1 Ta=125�C 1 IC / IB=20 / 1 Ta=25�C IC / IB=10 / 1 Ta= -40�C 0.1 0.1 Ta=125�C Ta=25�C Ta= -40�C 0.01 0.01 0.1 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Voltage vs. Voltage vs.Colle

1.609. 2sc2412k_2sc4081_2sc4617_2sc5658_2sc1740s.pdf Size:171K _rohm

s and hFE Package Taping Code T146 T106 TL T2L TP Basic ordering 3000 3000 3000 8000 5000 Type hFE unit (pieces) 2SC2412K QR - - - - 2SC4081 QR - - - - 2SC4617 QR - - - - 2SC5658 QR - - - - 2SC1740S QR - - - - hFE values are classified as follows : Item Q R hFE 120 to 270 180 to 390 ?Electrical characterristic curves 0.50mA 100 50 10 Ta=25�C 30�A VCE=6V Ta=25�C 27�A 20 80 8 24�A 0.30mA 10 21�A 0.25mA 5 60 6 18�A 0.20mA 15�A 2 0.15mA 12�A 40 4 1 9�A 0

1.610. 2sc5874s.pdf Size:98K _rohm

Area Collector Current (?) 1000 10 10 Ta=25�C IC / IB=10 / 1 Ta=25�C 100 1 1 VCE=5V VCE=3V VCE=2V Ta=100�C IC / IB=20 / 1 Ta=25�C IC / IB=10 / 1 Ta= -40�C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collector Current (??) Voltage vs. Collector Current (?) Volt

1.611. 2sc5877s.pdf Size:98K _rohm

1 Ta=25�C 100 1 1 VCE=5V VCE=3V Ta=125�C IC / IB=20 / 1 VCE=2V Ta=25�C IC / IB=10 / 1 Ta= -40�C 10 0.1 0.1 1 0.01 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Fig.5 Collector-Emitter Saturation Fig.6 Collector-Emitter Saturation Collector Current (??) Voltage vs. Collector Current (?) Voltage vs. Collector Current (??) 2/3 SWITCHING TIME : (ns) DC CURREN

1.612. 2sc5730.pdf Size:50K _rohm

area Fig.3 DC current gain vs. collector current 1000 10 10 Ta=25�C IC/IB=10/1 Ta=25�C VCE=5V VCE=3V 1 1 100 Ta=100�C VCE=2V 10 0.1 0.1 IC/IB=20/1 Ta=25�C Ta=-40�C IC/IB=10/1 0.01 0.01 1 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Fig.4 DC current gain vs. collector vs. collector current v

1.613. irfpc50_sihfpc50.pdf Size:1457K _vishay

X. UNIT Maximum Junction-to-Ambient RthJA -- 40 Case-to-Sink, Flat, Greased Surface RthCS -0.24-�C/W Maximum Junction-to-Case (Drain) RthJC - - 0.65 SPECIFICATIONS (TJ = 25 �C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 �A 600 - - V VDS Temperature Coefficient ?VDS/TJ Reference to 25 �C, ID = 1 mA - 0.78 - V/�C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 �A 2.0 - 4.0 V Gate-

1.614. irfpc50a_sihfpc50a.pdf Size:889K _vishay

- � 100 nA VDS = 600 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS �A VDS = 480 V, VGS = 0 V, TJ = 125 �C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6.0 Ab - - 0.58 ? Forward Transconductance gfs VDS = 50 V, ID = 6.0 Ab 7.7 - - S Dynamic Input Capacitance Ciss - 2100 - VGS = 0 V, Output Capacitance Coss VDS = 25 V, - 270 - f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 9.7 - pF VDS = 1.0 V, f = 1.0 MHz - 2830 - Output Capacitance

1.615. irfpc50lc_sihfpc50lc.pdf Size:597K _vishay

ge without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFPC50LC, SiHFPC50LC Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 Case-to-Sink, Flat, Greased Surface RthCS 0.24 - �C/W Maximum Junction-to-Case (Drain) RthJC -0.65 SPECIFICATIONS (TJ = 25 �C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static

1.616. bc549b-c_bc550b-c.pdf Size:52K _diodes

Hz) BC549B/BC550B 240 330 500 BC549C/BC550C 450 600 900 Noise Figure dB (IC = 200 �Adc, VCE = 5.0 Vdc, RS = 2.0 k?, f = 1.0 kHz) NF1 � 0.6 2.5 (IC = 200 �Adc, VCE = 5.0 Vdc, RS = 100 k?, f = 1.0 kHz) NF2 � � 10 NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 �s � Duty cycle = 2%. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC549B,C BC550B,C 2.0 1.0 TA = 25�C VCE = 10 V 0.9 1.5 TA = 25�C 0.8 VBE(sat) @ IC/I

1.617. umc5n.pdf Size:283K _diodes

= 5mA Gain-Bandwidth Product fT ? 250 ? MHz VCE = 10V, IE = -5mA, f = 100MHz* Input Resistance R1 32.9 47 61.1 k? ? Resistance Ratio R2/R1 0.8 1 1.2 ? ? *Characteristics of Transistor � for reference only. Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25�C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition VI(off) ? ? -0.3 V VCC = -5V, IO = -100?A Input Voltage VI(on) -2.5 ? ? V VO = -0.3V, IO = -20mA Output Voltage VO(on) ? -0.

1.618. bsc520n15ns3rev2.2.pdf Size:657K _infineon

5 697DA5 6?A 71C5 381A75 @1A1=5C5A 4569>9C9?> + 5E @175 % ! !% #:A0< /4==4;,>4:9 <,49 .?<<09> = ) = . t t C D C G 60 25 50 20 40 15 30 10 20 5 10 0 0 0 40 80 120 160 0 40 80 120 160 T *F + C T *F + C %,10 :;0<,>492 ,<0, ,B ><,9=409> >30<8,7 48;0/,9.0 = S = = t ) D D C t C p @1A1=5C5A t @1A1=5C5A =t p p 102 101 UB UB UB 101 =B 100 DC 100 1 1 B9>7<5 @D

1.619. ixkp20n60c5m.pdf Size:101K _ixys

0 8V 6V 25 25 5.5 V 7V 45 20 20 6V 15 15 5V 30 5.5 V 10 10 4.5 V 15 5V 5 5 4.5 V 0 0 0 0 40 80 120 160 0 5 10 15 20 0 5 10 15 20 TC [�C] V [V] V [V] DS DS Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. 20090209d � 2009 IXYS All rights reserved 3 - 4 D D I [A ] I [A] tot P [ W] IXKP 20N60C5M 1.2 0.6 80 6.5 V TJV = 150�C ID = 10

1.620. ixkh70n60c5.pdf Size:106K _ixys

BSC L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 OP 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242 BSC 6.14 BSC b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 D1 0.515 - 13.07 - D2 0.020 0.053 0.51 1.35 E1 0.530 - 13.45 - OP1 - 0.291 - 7.39 700 250 140 10 V 8V 8V TJ = 25�C VGS = 20 V TJ = 150�C 7V 10 V 600 120 7V 200 6V VGS =20 V 500 100 5.5 V 150 400 80 6V 300 60 5V 100 5.5 V 200 40 4.5 V 5V

1.621. ixkp13n60c5m.pdf Size:100K _ixys

V 25 6V 8V VGS = 8V 30 5.5 V 15 20 6V 15 10 5V 15 5.5 V 10 4.5 V 5V 5 5 4.5 V 0 0 0 0 40 80 120 160 0 5 10 15 20 0 5 10 15 20 TC [�C] V [V] DS V [V] DS Fig. 1 Power dissipation Fig. 2 Typ. output characteristics Fig. 3 Typ. output characteristics IXYS reserves the right to change limits, test conditions and dimensions. 20090209d � 2009 IXYS All rights reserved 3 - 4 D D tot I [A ] I [A ] P [ W] IXKP 13N60C5M 1.8 1 50 ID = 6.6 A VDS > 2�RDS(on) max

1.622. cpc5602.pdf Size:79K _ixys

Current IDS(off) VGS= -5V, VDS=350V - - 1 ?A Drain Current VGS= -2.7V, VDS=5V, VDS=50V - - 5 mA ID VGS= -0.57V, VDS=5V 130 - - mA ? On Resistance RDS(on) VGS= -0.35V, IDS=50mA - 8 14 Gate Leakage Current IGSS VGS=10V, VGS=-10V - - 0.1 ?A Gate Capacitance CISS VDS= VGS=0V - - 300 pF Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Thermal Resistance R?JC - - - 14 ?C/W R05 2 www.clare.com CPC5602 MANUFACTURING INFORMATION Soldering Washing For proper assembl

1.623. ixkc23n60c5.pdf Size:262K _ixys

bol Conditions Characteristic Values min. typ. max. with heatsink compound RthCH 0.28 K/W Weight 3.1 g IXYS reserves the right to change limits, test conditions and dimensions. 20100303c � 2010 IXYS All rights reserved 2 - 4 IXKC 23N60C5 ISOPLUS220TM Outline INCHES MILLIMETERS A E SYM MIN MAX MIN MAX A .157 .197 4.00 5.00 A2 .098 .118 2.50 3.00 b .035 .051 0.90 1.30 b2 .049 .065 1.25 1.65 b4 .093 .100 2.35 2.55 c 1.00 .028 .039 0.70 D .591 .630 15.00 16.00 D1 .472 .512 1

1.624. bc546_bc547_bc548_to-92.pdf Size:295K _mcc

mA, VCE = 5.0 V) 0.55 � 0.7 (IC = 10 mA, VCE = 5.0 V) � � 0.77 SMALL�SIGNAL CHARACTERISTICS Current�Gain � Bandwidth Product fT MHz (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) BC546 150 300 � BC547 150 300 � BC548 150 300 � Output Capacitance Cobo � 1.7 4.5 pF (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance Cibo � 10 � pF (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Small�Signal Current Gain hfe � (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) BC546A/547A/548A 125 220 260 BC546B/547B/548B 240 330 50

1.625. umc2nt1g_umc3nt1g_umc5nt1g.pdf Size:158K _onsemi

Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO - - 500 nAdc Emitter-Base Cutoff Current UMC2NT1G IEBO - - 0.2 mAdc (VEB = 6.0, IC = 0 mA) UMC3NT1G - - 0.5 UMC5NT1G / T2G - - 1.0 ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V

1.626. bc559.pdf Size:125K _onsemi

fe � (IC = -2.0 mAdc, VCE = -5.0 V, f = 1.0 kHz) BC559B 240 330 500 BC559C/BC560C 450 600 900 Noise Figure dB (IC = -200 ?Adc, VCE = -5.0 Vdc, RS = 2.0 k?, f = 1.0 kHz) NF1 � 0.5 2.0 (IC = -200 ?Adc, VCE = -5.0 Vdc, RS = 100 k?, f = 1.0 kHz, ?f = 200 kHz) NF2 � � 10 NOTES: 1. IB is value for which IC = -11 mA at VCE = -1.0 V. 2. Pulse test = 300 ?s - Duty cycle = 2%. http://onsemi.com 2 BC559 2.0 -1.0 TA = 25�C VCE = -10 V -0.9 1.5 TA = 25�C -0.8 VBE(sat) @ IC/IB = 10 1.0 -0

1.627. nthc5513.pdf Size:80K _onsemi

r to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. � Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: October, 2004 - Rev. 4 NTHC5513/D C1 M NTHC5513 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient (Note 1) Steady State RqJA 110 �C/W T =25�C TA = 25�C t v 5 60 2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25�C unless other

1.628. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

.0 -100 (VCES = -20 V, TA = 125�C) BC556 - - -4.0 mA BC557 - - -4.0 BC558 - - -4.0 ON CHARACTERISTICS DC Current Gain hFE - (IC = -10 mAdc, VCE = -5.0 V) A Series Device - 90 - B Series Devices - 150 - C Series Devices - 270 - (IC = -2.0 mAdc, VCE = -5.0 V) BC557 120 - 800 A Series Device 120 170 220 B Series Devices 180 290 460 C Series Devices 420 500 800 (IC = -100 mAdc, VCE = -5.0 V) A Series Device - 120 - B Series Devices - 180 - C Series Devices - 300 - Collector-Emitter S

1.629. bc546b_bc547a-b-c_bc548b-c.pdf Size:72K _onsemi

S DC Current Gain hFE - (IC = 10 mA, VCE = 5.0 V) BC547A - 90 - BC546B/547B/548B - 150 - BC548C - 270 - (IC = 2.0 mA, VCE = 5.0 V) BC546 110 - 450 BC547 110 - 800 BC548 110 - 800 BC547A 110 180 220 BC546B/547B/548B 200 290 450 BC547C/BC548C 420 520 800 (IC = 100 mA, VCE = 5.0 V) BC547A/548A - 120 - BC546B/547B/548B - 180 - BC548C - 300 - Collector - Emitter Saturation Voltage VCE(sat) V (IC = 10 mA, IB = 0.5 mA) - 0.09 0.25 (IC = 100 mA, IB = 5.0 mA) - 0.2 0.6 (IC = 10 mA, IB =

1.630. 2sc5658m3.pdf Size:125K _onsemi

tor-Emitter Saturation Voltage (Note 2) VCE(sat) Vdc (IC = 60 mAdc, IB = 5.0 mAdc) - - 0.4 DC Current Gain (Note 2) hFE - (VCE = 6.0 Vdc, IC = 1.0 mAdc) 2SC5658M3T5G 120 - 560 (VCE = 6.0 Vdc, IC = 1.0 mAdc) 2SC5658RM3T5G 215 - 375 Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) fT - 180 - MHz Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz) COB - 2.0 - pF 2. Pulse Test: Pulse Width ? 300 ms, D.C. ? 2%. http://onsemi.com 2 2SC5658M3T5G, 2SC5658RM3T5G TYPICAL E

1.631. emc2dxv5t1_emc3dxv5t1_emc4dxv5t1_emc5dxv5t1.pdf Size:137K _onsemi

ransistor 1 - PNP Transistor 2 - NPN Device Marking R1 (K) R2 (K) R1 (K) R2 (K) Package Shipping� EMC2DXV5T1G UC 22 22 22 22 SOT-553* 4000 / Tape & Reel EMC3DXV5T1G SOT-553* 4000 / Tape & Reel U3 10 10 10 10 EMC3DXV5T5G SOT-553* 8000 / Tape & Reel EMC4DXV5T1G UE 10 47 47 47 SOT-553* 4000 / Tape & Reel EMC5DXV5T1G U5 4.7 10 47 47 SOT-553* 4000 / Tape & Reel �For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packa

1.632. 2sc5440.pdf Size:60K _panasonic

<1mA 0.001 0 1 3 10 30 100 300 1000 0 500 1000 1500 2000 ( ) ( ) Collector to emitter voltage VCE V Collector to emitter voltage VCE V 2 ( ) FE ( ) CE(sat) C Forward current transfer ratio h Collector power dissipation P W Collector to emitter saturation voltage V V ( ) ( ) C C Collector current I A Collector current I A CEO V max. Request for your special attention and precautions in using the technical information and semiconductors described in this material

1.633. 2sc5739.pdf Size:79K _panasonic

IC (A) Collector current IC (A) Area of safe operation Rth ? t 100 1 000 Ta = 25�C Non repetitive pulse TC = 25�C 10 100 ICP t = 1 ms IC (1) t = 1 s t = 10 ms 1 10 (2) 0.1 1 (1) Without heat sink (2) With 100 ? 100 ? 2 mm Al 0.01 0.1 1 10 100 1 000 0.001 0.01 0.1 1 10 100 1 000 Time t (s) Collector-emitter voltage VCE (V) SJD00288AED 2 FE CE(sat) C Collector current I (A) Forward current transfer ratio h Collector-emitter saturation voltage V (V) C th Collector cu

1.634. 2sc5472_e.pdf Size:38K _panasonic

1.635. 2sc5896.pdf Size:61K _panasonic

is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standa

1.636. 2sc5378_e.pdf Size:35K _panasonic

1.637. 2sc5556.pdf Size:65K _panasonic

100 1 -25�C 80 60 40 20 0 0.1 1 10 100 1 000 0 5 10 15 20 25 ( ) ( ) Collector current IC mA Collector-base voltage VCB V SJC00278BED 2 ( ) CE(sat) ( ) C ( ) C Collector current I mA Collector power dissipation P mW Collector-emitter saturation voltage V V ob C (pF) FE Forward current transfer ratio h Collector output capacitance (Common base, input open circuited) Request for your special attention and precautions in using the technical information and semic

1.638. 2sc5884.pdf Size:75K _panasonic

2 000 ( ) Ambient temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00311AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or

1.639. 2sc5478.pdf Size:35K _panasonic

1.640. 2sc5829.pdf Size:66K _panasonic

for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications: � Special applications (such as for airplan

1.641. 2sc5037.pdf Size:78K _panasonic

IC/IB=5 VCE=5V VCE=5V f=1MHz TC=25?C 30 300 30 10 100 10 TC=100?C 25?C 3 30 3 �25?C TC=�25?C 1 10 1 25?C 100?C 0.3 3 0.3 0.1 1 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 100 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 30 30 TC=25?C IC/IB=5 300 (2IB1=�IB2) VCC=

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dissipation P W

1.644. 2sc5270.pdf Size:35K _panasonic

holding down and like that, DC during horizontal operation. 1 30 0.6 0.5 0.1 20 0.4 0.3 0.01 10 0.2 0.1 Non repetitive pulse TC=25?C <1mA 0.001 0 0 1 3 10 30 100 300 1000 0 500 1000 1500 2000 0 1 2 3 4 5 ( ) ( ) ( ) Collector to emitter voltage VCE V Collector to emitter voltage VCE V End-of-scan current IB end A tstg �IB 10 TC=25?C 9 IC=6A fH=64kHz 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 ( ) End-of-scan current IB end A 2 ( ) FE ( ) CE(sat) C Forward current transf

1.645. 2sc5223.pdf Size:42K _panasonic

oltage V V ( ) ( ) FE ob BE(sat) Forward current transfer ratio h Collector output capacitance C pF Base to emitter saturation voltage V V

1.646. 2sc5572.pdf Size:71K _panasonic

1.647. 2sc5412.pdf Size:37K _panasonic

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25?C 25?C Ta=�25?C 1 900 12 �25?C 75?C 0.3 600 8 0.1 300 4 0.03 0.01 0 0 1 3 10 30 100 300 1000 1 3 10 30 100 300 1000 1 3 10 30 100 ( ) ( ) ( ) Collector current IC mA Collector current IC mA Collector to base voltage VCB V 2 ( ) ( ) CE(sat) C ( ) C Collector current I mA Collector power dissipation P W Collector to emitter saturation voltage V V ( ) ( ) FE ob BE(sat) Forward current transfer ratio h Collector output capacitance C pF Base to emitter satu

1.649. 2sc5553.pdf Size:55K _panasonic

lector power dissipation P W

1.650. 2sc5813.pdf Size:81K _panasonic

2 FE ( ) C ( ) C Collector current I A Forward current transfer ratio h Collector power dissipation P mW (V) ob C (pF) CE(sat) Collector output capacitance (Common base, input open circuited) Collector-emitter saturation voltage V Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of th

1.651. 2sc5243.pdf Size:46K _panasonic

IC A Collector current IC A Collector to emitter voltage VCE V Rth(t) �t 1000 Note: Rth was measured at Ta=25?C and under natural convection (1) PT=10V ? 0.3A (3W) and without heat sink (2) PT=10V ? 1.0A (10W) and with a 100 ? 100 ? 2mm Al heat sink 100 (1) 10 (2) 1 0.1 0.01 10�4 10�3 10�2 10�1 1 10 102 103 104 ( ) Time t s 2 FE ( ) C ( ) C Collector current I A Forward current transfer ratio h Collector power dissipation P W ( ) ( ) CE(sat) BE(sat) ( ) C Colle

1.652. 2sc5517.pdf Size:35K _panasonic

1.653. 2sc5407.pdf Size:36K _panasonic

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urrent IC A VBE(sat) �IC hFE �IC fT �IC 100 1000 1000 IC/IB=5 VCE=5V VCE=10V f=1MHz 30 300 300 TC=25?C 10 100 100 TC=100?C 25?C 3 30 30 �25?C 25?C TC=�25?C 1 10 10 100?C 0.3 3 3 0.1 1 1 0.03 0.3 0.3 0.01 0.1 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 10000 100 IE=0 Pulsed tw=1ms 10 f=1MHz Duty cycle

1.655. 2sc5035.pdf Size:62K _panasonic

C 0.3 3 3 0.1 1 1 0.03 0.3 0.3 0.01 0.1 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 10000 100 IE=0 Pulsed tw=1ms 10 f=1MHz Duty cycle=1% ICP 3000 30 TC=25?C IC/IB=5 (IB1=�IB2) IC 3 t=0.5ms VCC=250V 1000 10 TC=25?C 1 tstg 300 3 1ms 0.3 ton 10ms 100 1 DC 0.1 30 0.3 tf 0.03 10 0.1 0.01 3 0.03

1.656. 2sc5346.pdf Size:36K _panasonic

0 3 �25?C 100 2 50 1 0 0 1 3 10 30 100 300 1000 1 3 10 30 100 ( ) ( ) Collector current IC mA Collector to base voltage VCB V 2 ( ) ( ) CE(sat) C ( ) C Collector current I mA Collector power dissipation P W Collector to emitter saturation voltage V V ( ) FE ob Forward current transfer ratio h Collector output capacitance C pF

1.657. 2sc5406.pdf Size:37K _panasonic

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ollector current I mA Collector current I mA Collector power dissipation P mW ( ) FE CE(sat) ( ) T Transition frequency f GHz Forward current transfer ratio h Collector to emitter saturation voltage V V ( ) ( ) ob 2 ( ) Noise figure NF dB Forward transfer gain |S21e| dB Collector output capacitance C pF

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00 1000 100 IC/IB=5 VCE=5V VCE=10V f=1MHz TC=25?C 30 300 30 10 100 10 3 30 3 TC=�25?C 1 10 1 100?C 25?C TC=�25?C 0.3 3 0.3 25?C 100?C 0.1 1 0.1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.001 0.003 0.01 0.03 0.1 0.3 1 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 10 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 30 3 TC=25?C IC/IB=5 300 (2IB

1.662. 2sc5885.pdf Size:64K _panasonic

1 000 1 500 2 000 ( ) Ambient temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00312AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the

1.663. 2sc5993.pdf Size:73K _panasonic

his material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of int

1.664. 2sc5839.pdf Size:80K _panasonic

ratio h Collector-emitter saturation voltage V (V) Collector output capacitance (Common base, input open circuited) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be e

1.665. 2sc5346_e.pdf Size:41K _panasonic

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(mW) Collector-emitter saturation voltage V (V) ob C (pF) FE Forward current transfer ratio h Collector output capacitance (Common base, input open circuited) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "For

1.667. 2sc5779.pdf Size:78K _panasonic

1 0.001 0.01 0.1 1 10 100 1 10 100 1 000 Collector current IC (A) Collector-emitter voltage VCE (V) Rth ? t 1 000 Ta = 25�C 100 (1) (2) 10 1 (1) Without heat sink (2) With a 100 ? 100 ? 2 mm Al heat sink 0.1 0.001 0.01 0.1 1 10 100 1 000 Time t (s) SJD00289AED 2 CE(sat) C C Collector current I (A) Collector power dissipation P (W) Collector-emitter saturation voltage V (V) FE C Collector current I (A) Forward current transfer ratio h th Thermal resistance R ( �

1.668. 2sc5505.pdf Size:72K _panasonic

an. (2) The technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products

1.669. 2sc5514.pdf Size:35K _panasonic

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( ) C C Collector current I mA Collector current I mA Collector power dissipation P mW ( ) FE CE(sat) ( ) T Transition frequency f GHz Forward current transfer ratio h Collector to emitter saturation voltage V V ( ) ( ) ob 2 ( ) Noise figure NF dB Forward transfer gain |S21e| dB Collector output capacitance C pF

1.671. 2sc5018.pdf Size:36K _panasonic

01 0.03 0.1 0.3 1 ( ) ( ) Collector current IC A Collector current IC A 2 ( ) ( ) CE(sat) C ( ) C Collector current I mA Collector power dissipation P W Collector to emitter saturation voltage V V ( ) FE BE(sat) Forward current transfer ratio h Base to emitter saturation voltage V V

1.672. 2sc5909.pdf Size:78K _panasonic

ter voltage VCE V Collector-emitter voltage VCE V SJD00307AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controll

1.673. 2sc5216.pdf Size:35K _panasonic

I mA Collector power dissipation P mW ( ) ( ) FE CE(sat) ob Forward current transfer ratio h Collector output capacitance C pF Collector to emitter saturation voltage V V

1.674. 2sc5809.pdf Size:78K _panasonic

power dissipation P (W) th Thermal resistance R ( � C/W) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical informati

1.675. 2sc5474_e.pdf Size:37K _panasonic

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A) Collector power dissipation P (W) ( � C/ ) th Thermal resistance R W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The

1.677. 2sc5419_e.pdf Size:44K _panasonic

00 300 1000 0 0.2 0.4 0.6 0.8 1.0 ( ) ( ) ( ) Base current IB mA Collector current IC mA Base to emitter voltage VBE V hFE � IC Cob � VCB 300 12 f=1MHz VCE=10V IE=0 Ta=75?C Ta=25?C 250 10 25?C 200 8 �25?C 150 6 100 4 50 2 0 0 1 3 10 30 100 300 1000 1 3 10 30 100 ( ) ( ) Collector current IC mA Collector to base voltage VCB V 2 ( ) C ( ) ( ) C C Collector current I mA Collector current I mA Collector power dissipation P W ( ) CE(sat) ( ) ( ) C B Base c

1.678. 2sc5378.pdf Size:31K _panasonic

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VCE=2V Ta=25?C 30 250 160 10 200 Ta=75?C 3 120 25?C Ta=�25?C 25?C 1 150 75?C �25?C 80 0.3 100 0.1 40 50 0.03 0.01 0 0 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 �1 �3 �10 �30 �100 �300 �1000 ( ) ( ) ( ) Collector current IC A Collector current IC A Emitter current IE mA Cob � VCB 60 50 40 30 20 10 0 1 3 10 30 100 300 1000 ( ) Collector to base voltage VCB V 2 ( ) ( ) CE(sat) C ( ) C Collector current I A Collector power dissipation P W Co

1.680. 2sc5190.pdf Size:37K _panasonic

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.1 0.1 0.0 0.0 0.1 1 10 0.1 1 10 IC [A] IC [A] fT [MHz] fT [MHz] Cob [pF] Cob [pF] hFE hFE VCE(sat) [V] VCE(sat) [V]

1.683. 2sc5622.pdf Size:57K _panasonic

struments and household appliances). Consult our sales staff in advance for information on the following applications: � Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. � Any applications other than the standard applicatio

1.684. 2sc5686.pdf Size:75K _panasonic

ons in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circu

1.685. 2sc5946.pdf Size:159K _panasonic

1.686. 2sc5393.pdf Size:34K _panasonic

1.687. 2sc5457.pdf Size:37K _panasonic

1.688. 2sc5584.pdf Size:45K _panasonic

1.689. 2sc5913.pdf Size:78K _panasonic

0 25 50 75 100 125 150 1 10 100 1 000 0 500 1 000 1 500 2 000 ( ) Ambient temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00309AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorit

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1.691. 2sc5419.pdf Size:39K _panasonic

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rent I A Collector current I A Collector power dissipation P W 2SC5294 2SC5294A

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C ( ) ( ) C C Collector current I mA Collector current I mA Collector power dissipation P mW ( ) FE CE(sat) ( ) T Transition frequency f GHz Forward current transfer ratio h Collector to emitter saturation voltage V V ( ) ( ) ob 2 ( ) Noise figure NF dB Forward transfer gain |S21e| dB Collector output capacitance C pF

1.694. 2sc5954.pdf Size:58K _panasonic

rial is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard

1.695. 2sc5335.pdf Size:38K _panasonic

1.696. 2sc5935.pdf Size:71K _panasonic

tion and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It n

1.697. 2sc5926.pdf Size:57K _panasonic

ng representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general

1.698. 2sc5609.pdf Size:45K _panasonic

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B=5 VCE=5V VCE=10V f=1MHz TC=25?C 30 300 30 10 100 10 TC=125?C 3 30 3 �25?C 25?C TC=�25?C 1 10 1 125?C 25?C 0.3 3 0.3 0.1 1 0.1 0.1 0.3 1 3 10 30 100 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 100 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 30 30 TC=25?C IC/IB=10 300 (2IB1=�IB2) VCC=200V 10 10

1.700. 2sc5632.pdf Size:49K _panasonic

ed by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). Consult our sales staff in advance for information on the following applications: � Special applications (such as for airplanes, aerospace, automobiles, traffi

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temperature Ta �C ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00305AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information de

1.705. 2sc5063.pdf Size:62K _panasonic

/IB=5 10 f=10MHz 300 TC=25?C 300 3 100 25?C 100 TC=�25?C 30 1 25?C TC=100?C 100?C 10 30 0.3 �25?C 3 10 0.1 1 3 0.03 0.3 0.01 1 0.1 0.01 0.03 0.1 0.3 1 3 0.01 0.03 0.1 0.3 1 0.001 0.003 0.01 0.03 0.1 0.3 1 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 10000 100 100 Pulsed tw=1ms IE=0 Non repetitive pulse Duty cycle=1% f=1MHz TC=25?C 3000 30 IC/IB=5 30 TC=25?C (2IB1=�IB2)

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I mA Collector power dissipation P mW ( ) ( ) FE CE(sat) ob Forward current transfer ratio h Collector output capacitance C pF Collector to emitter saturation voltage V V

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.2 0.4 0.6 0.8 ( ) Base-emitter voltage VBE V ( ) ( ) Collector current IC mA Base-emitter voltage VBE V hFE ? IC Cob ? VCB 350 10 VCE = 10V f = 1 MHz Ta = 75�C Ta = 25�C 300 25�C 250 �25�C 200 150 100 50 0 1 1 10 100 1 000 0 8 16 24 32 40 ( ) Collector current IC mA ( ) Collector-base voltage VCB V SJC00298AED 2 ( ) C ( ) ( ) C C Collector current I mA Collector current I mA Collector power dissipation P mW ( ) CE(sat) ( ) C ( ) B Base current

1.712. 2sc5931.pdf Size:67K _panasonic

ent temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00314AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical inform

1.713. 2sc5515.pdf Size:35K _panasonic

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1.715. 2sc5019_e.pdf Size:41K _panasonic

00 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 ( ) ( ) ( ) Collector current IC mA Collector current IC mA Collector current IC mA Cob � VCB GUM � IC NF � IC 2.4 24 12 IE=0 VCE=8V VCE=8V f=1MHz f=800MHz (Rg=50? ) Ta=25?C Ta=25?C f=800MHz 2.0 20 10 Ta=25?C 1.6 16 8 1.2 12 6 0.8 8 4 0.4 4 2 0 0 0 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 ( ) ( ) ( ) Collector to base voltage VCB V Collector current IC mA Collector current IC mA 2 ( ) C ( ) ( ) C

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A) Collector current I (mA) Collector power dissipation P (mW) ob C (pF) FE CE(sat) Forward current transfer ratio h Collector-emitter saturation voltage V (V) Collector output capacitance (Common base, input open circuited) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or

1.717. 2sc5518.pdf Size:35K _panasonic

1.718. 2sc5244.pdf Size:36K _panasonic

400 800 1200 1600 2000 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector to emitter voltage VCE V Rth(t) �t 1000 Note: Rth was measured at Ta=25?C and under natural convection (1) PT=10V ? 0.3A (3W) and without heat sink (2) PT=10V ? 1.0A (10W) and with a 100 ? 100 ? 2mm Al heat sink 100 (1) 10 (2) 1 0.1 0.01 10�4 10�3 10�2 10�1 1 10 102 103 104 ( ) Time t s 2 FE ( ) C ( ) C Collector current I A Forward current transfer ratio h Collector power diss

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1.721. 2sc5032.pdf Size:59K _panasonic

1 3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 100 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 30 30 TC=25?C IC/IB=10 300 (2IB1=�IB2) VCC=200V 10 10 TC=25?C ICP 100 3 3 t=1ms tstg IC 10ms 1 1 30 DC ton tf 0.3 0.3 10 0.1 0.1 3 0.03 0.03 1 0.01 0.01 1 3 10 30 100 0 1 2 3 4 1 3 10 30 100 300 1000 ( ) ( ) ( ) Collector to base voltage VCB

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1.723. 2sc5905.pdf Size:94K _panasonic

nt IC A ( ) Base current IB(END) A ( ) Collector-emitter voltage VCE V tstg ? IB(END) Area of safe operation Area of safe operation (Horizontal operation) 102 2.0 fH = 32 kHz fH = 32 kHz, TC < 90�C ICP = 30 A t = 100 �s ASO for a single IC = 10 A 30 PC = 70 W pulse load caused by L load 1 ms IC = 20 A EHT flashover during 10 1.6 horizontal operation. 10 ms DC operation 1 1.2 20 0.8 10-1 10 10-2 0.4 TC = 25�C Single pulse < 1 mA 0 0 10-3 1 10 102 103 0 500 1 000

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1.726. 2sc5840.pdf Size:79K _panasonic

t (s) SJD00297AED 2 C C Collector current I (A) Collector power dissipation P (W) ( � C/ ) th Thermal resistance R W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law"

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1.729. 2sc5034.pdf Size:59K _panasonic

ctor current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 10000 100 100 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 3000 30 30 TC=25?C IC/IB=5 ICP (2IB1=�IB2) VCC=150V 1000 10 10 IC TC=25?C t=0.5ms 300 3 3 1ms tstg 100 1 1 10ms ton 30 0.3 0.3 DC tf 10 0.1 0.1 3 0.03 0.03 1 0.01 0.01 0.1 0.3 1 3 10 30 100 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 ( ) ( ) ( ) Collector to base voltage VCB V Collector current

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.8 1 10 100 ( ) ( ) Base-emitter voltage VBE V Base-emitter voltage VBE V ( ) Collector current IC mA hFE ? IC Cob ? VCB 350 10 VCE = 10V f = 1 MHz Ta = 75�C Ta = 25�C 300 25�C 250 �25�C 200 150 100 50 0 1 1 10 100 1 000 0 8 16 24 32 40 ( ) ( ) Collector current IC mA Collector-base voltage VCB V SJC00297AED 2 ( ) C ( ) ( ) C C Collector current I mA Collector current I mA Collector power dissipation P mW ( ) CE(sat) ( ) ( ) C B Base current I m

1.733. 2sc5895.pdf Size:54K _panasonic

mited to showing representative characteris- tics and applied circuits examples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard app

1.734. 2sc5546.pdf Size:37K _panasonic

1.735. 2sc5077.pdf Size:84K _panasonic

10V f=1MHz TC=25?C 30 300 300 10 100 100 3 30 30 TC=�25?C 1 10 10 TC=�25?C 100?C 25?C 25?C 100?C 0.3 3 3 0.1 1 1 0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100 0.01 0.03 0.1 0.3 1 3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 100 IE=0 Pulsed tw=1ms Non repetitive pulse f=1MHz Duty cycle=1% TC=25?C 30 30 TC=25?C IC/IB=5 300 ICP (2IB1=�IB2) VCC=200V 10 10 IC TC=25?C t

1.736. 2sc5939.pdf Size:80K _panasonic

= 25�C 120 25�C Ta = 85�C 100 -25�C 80 0.1 60 Ta = 85�C -25�C 40 25�C 20 0 1 0.01 0.1 1 10 100 0.1 1 10 0 2 4 6 8 10 12 14 16 Collector current IC (mA) Collector current IC (mA) Collector-base voltage VCB (V) SJC00306AED 2 C (m ) C C Collector current I A Collector current I (mA) Collector power dissipation P (mW) ob C (pF) FE CE(sat) Forward current transfer ratio h Collector-emitter saturation voltage V (V) Collector output capacitance (Common base, inpu

1.737. 2sc5788.pdf Size:73K _panasonic

25�C 10 ICP t = 1 ms IC t = 1 s t = 10 ms 1 0.1 0.01 1 10 100 1 000 Collector-emitter voltage VCE (V) SJD00290AED 2 FE CE(sat) C Collector current I (A) Forward current transfer ratio h Collector-emitter saturation voltage V (V) C Collector current I (A) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanes

1.738. 2sc5725.pdf Size:57K _panasonic

xamples of the products. It neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, com

1.739. 2sc5912.pdf Size:78K _panasonic

50 1 10 100 1 000 0 500 1 000 1 500 2 000 ( ) Ambient temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00308AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese G

1.740. 2sc5128.pdf Size:59K _panasonic

3 10 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector current IC A Cob �VCB ton, tstg, tf � IC Area of safe operation (ASO) 1000 100 30 IE=0 Pulsed tw=1ms ICP f=1MHz Duty cycle=1% 10 30 TC=25?C IC/IB=5 IC 300 (2IB1=�IB2) t=0.5ms VCC=200V 10 3 1ms TC=25?C 100 10ms 1 3 DC tstg 1 0.3 30 ton 0.1 0.3 tf 10 0.1 0.03 3 0.01 0.03 Non repetitive pulse TC=25?C 1 0.01 0.003 1 3 10 30 100 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 ( ) ( ) ( ) Collec

1.741. 2sc5902.pdf Size:78K _panasonic

100 125 150 0 500 1 000 1 500 2 000 1 10 100 1 000 ( ) Ambient temperature Ta �C ( ) ( ) Collector-emitter voltage VCE V Collector-emitter voltage VCE V SJD00304AED 2 ( ) C ( ) ( ) C C Collector current I A Collector current I A Collector power dissipation P W Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the

1.742. 2sc5380.pdf Size:38K _panasonic

1.743. 2sc5418.pdf Size:37K _panasonic

1.744. 2sc5127.pdf Size:60K _panasonic

00?C 30 TC=�25?C 25?C 1 10 10 �25?C 100?C 25?C 0.3 3 3 0.1 1 1 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 100 ( ) ( ) ( ) Collector current IC A Collector current IC A Collector to base voltage VCB V fT �IC ton, tstg, tf � IC Area of safe operation (ASO) 100 100 10 Non repetitive pulse VCE=10V Pulsed tw=1ms TC=25?C f=1MHz Duty cycle=1% 30 3 TC=25?C IC/IB=3.5 30 (2IB1=�IB2) t=0.5ms VCC=200V 10 1 TC=25?C 1ms 10 3 0.3 10ms tstg ton 1 0.1 3 DC 0.3 0.

1.745. 2sc5121.pdf Size:38K _panasonic

1.746. 2sc5342.pdf Size:221K _auk

1.747. 2sc5343.pdf Size:231K _auk

ut prior consultation with AUK. KST-9005-003 4

1.748. 2sc5345.pdf Size:123K _auk

1.749. 2sc5344.pdf Size:215K _auk

1.750. 2sc5218.pdf Size:46K _hitachi

Current I (mA) C 4 Noise Figure NF (dB) Power Gain PG (dB) 21 21 S Parameter |S | (dB) 2SC5218 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 6 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 5 V , Zo = 50 Condition: VCE= 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) 100 to 1000 MHz (100 MHz step)

1.751. 2sc5051.pdf Size:24K _hitachi

the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi�s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transporta

1.752. 2sc5812.pdf Size:94K _hitachi

0.6 0.6 0.4 0.4 0.2 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector to Base Voltage VCB (V) Collector to Base Voltage VCB (V) Gain Bandwidth Product vs. S21 Parameter vs. Collector Current Collector Current 20 20 VCE = 1 V f = 1 GHz 16 16 12 12 8 8 4 4 VCE = 1 V f = 900 MHz 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.0, Nov. 2001, page 4 of 10 re Collector Output Capacitance Cob (pF) Reverse Transf

1.753. 2sc5246.pdf Size:64K _hitachi

3 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 ? ? Condition: VCE= 5 V , Zo = 50 Condition: VCE= 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 10 mA) (IC = 10 mA) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 90� 1 .8 1.5 60� .6 120� 2 .

1.754. 2sc5702.pdf Size:109K _hitachi

mitter to Base Voltage VEB (V) 4 Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance Cob (pF) Input Capacitance Cib (pF) 2SC5702 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5.0 f = 900 MHz f = 900 MHz VCE = 3 V 16 4.0 VCE = 3 V 2 V 2 V 12 3.0 1 V 8 2.0 1 V 4 1.0 0 0.0 10 20 1 2 5 50 100 10 20 50 100 1 2 5 Collector Current Ic (mA) Collector Current Ic (mA) Gain Bandwidth Product vs. Collector Currnet S 21 Param

1.755. 2sc5449.pdf Size:45K _hitachi

.5 1 2 5 10 20 0.2 0.5 1 2 5 10 20 Collector Current I (A) Collector Current I (A) C C Collector to Emitter Saturation Voltage vs. Base Current Fall Time vs. Base Current 0.8 10 I = 6 A CP f = 64 kHz H I = 4 A 0.6 Tc = 25�C C 6 A 8 A 0.4 5 0.2 Tc = 25�C 0 0 0.1 0.2 0.5 1 2 5 10 0.4 0.8 1.2 1.6 2.0 2.4 2.6 Base Current I (A) B Base Current I (A) B1 4 CE(sat) BE(sat) V (V) V (V) Base to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (V) CE(s

1.756. 2sc5273.pdf Size:42K _hitachi

1.757. 2sc5120.pdf Size:26K _hitachi

Characteristics DC Current Transfer Ratio vs. 18 mA Collector Current 20 mA 16 mA 1000 0.2 500 200 Tc = 75�C 25�C 100 0.1 50 �25�C 20 VCE = 10 V Tc = 25 �C I = 0 B 10 1 2 5 10 20 50 100 200 05 10 Collector to Emitter Voltage VCE (V) Collector Current I (mA) C C Collector Current I (mA) Collector Power Dissipation Pc (W) FE C Collector Current I (A) DC Current Transfer Ratio h PW = 1 ms 10 ms DC Operation (Tc = 25 �C) 14 mA 12 mA 10 mA 8 mA 6 mA 4 mA

1.758. 2sc5700.pdf Size:102K _hitachi

. Collector Current S21 Parameter vs. Collector Current 20 20 VCE = 1V f = 2 GHz 16 16 12 12 8 8 VCE = 1 V 4 4 f = 900 MHz 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.0, Jun. 2001, page 4 of 10 ob Gain Bandwidth Product f T (GHz) Collector Output Capacitance C (pF) 2 2 21 21 21 21 S Parameter | S | (dB) S Parameter | S | (dB) 2SC5700 Noise Figure vs. Collector Current 5 VCE = 1 V f = 900 MHz 4

1.759. 2sc5141.pdf Size:62K _hitachi

NF (dB) 2SC5141 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 4 V , Zo = 50 Condition: VCE= 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 20 mA) (IC = 20 mA) S12 Parameter vs. Frequency S22 Para

1.760. 2sc5219.pdf Size:35K _hitachi

tion Voltage BE(sat) V (V) Base to Emitter Saturetion Voltage 2SC5219 Collector to Emitter Saturation Voltage vs. Base Current 10 Tc = 25 �C I = 4 A C 5 6 A 8 A 0 0.1 0.2 0.5 1 2 5 10 Base Current I (A) B Fall Time vs. Base Current 1.0 I = 6 A CP 0.8 f = 31.5 kHz H 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Base Current I (A) B1 5 CE(sat) V (V) Collector to Emitter Saturation Voltage f Fall Time t ( � s) 2SC5219 When using this document, keep the follow

1.761. 2sc5849.pdf Size:87K _hitachi

VCB (V) Gain Bandwidth Product vs. S21 Parameter vs. Collector Current Collector Current 20 20 VCE = 1 V VCE = 1 V f = 1 GHz f = 1 GHz 16 16 12 12 8 8 4 4 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.0, Nov. 2001, page 4 of 10 re Collector Output Capacitance Cob (pF) Reverse Transfer Capacitance C (pF) T 2 21 21 S Parameter |S | (dB) Gain Bandwidth Product f (GHz) 2SC5849 Power Gain vs. Collector Current N

1.762. 2sc5132.pdf Size:23K _hitachi

5 �C 1 2 VCE = 5 V Tc = 25 �C I = 0 B 1 05 10 0.1 0.2 0.5 1 2 5 10 Collector to Emitter Voltage V (V) CE Collector Current I (A) C Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage vs. Collector Current vs. Collector current 5 10 I / I = 4 I / I = 4 C B C B 5 2 2 1 Tc = �25�C 0.5 1 Tc = �25 �C 0.5 25 �C 25 �C 0.2 75 �C 75 �C 0.1 0.2 0.05 0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10 Collector Current I (A) Collector Current IC (A) C FE C C

1.763. 2sc5137.pdf Size:58K _hitachi

iv. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 5 V , Zo = 50 Condition: VCE= 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 10 mA) (IC = 10 mA) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 15

1.764. 2sc5050.pdf Size:24K _hitachi

ications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi�s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or med

1.765. 2sc5447.pdf Size:46K _hitachi

0.2 0.5 1 2 5 10 0.1 0.2 0.5 1 2 5 10 Collector Current I (A) Collector Current I (A) C C Collector to Emitter Saturation Voltage vs. Base Current Fall Time vs. Base Current 0.8 10 I = 4 A CP f = 64 kHz H I = 3 A 0.6 Tc = 25�C C 4 A 5 A 0.4 5 0.2 Tc = 25�C 0 0 0 0.1 0.2 0.5 1 2 5 10 0.4 0.8 1.2 1.6 2.0 Base Current I (A) B Base Current I (A) B1 4 CE(sat) BE(sat) V (V) V (V) Base to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (V) C

1.766. 2sc5136.pdf Size:58K _hitachi

5136 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 0.2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 4 V , Zo = 50 Condition: VCE= 4 V , Zo = 50 100 to 1000 MHz (100 MHz step) 100 to 1000 MHz (100 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 20 mA) (IC = 20 mA) S12 Parameter vs. Frequency S22 Parameter vs. Fre

1.767. 2sc5827.pdf Size:92K _hitachi

4 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.0, Nov. 2001, page 4 of 10 re Collector Output Capacitance Cob (pF) Reverse Transfer Capacitance C (pF) T 2 21 21 S Parameter |S | (dB) Gain Bandwidth Product f (GHz) 2SC5827 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 VCE = 1 V VCE = 1 V f = 900 MHz f = 900 MHz 16 4 12 3 8 2 4 1 0 0 1 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector C

1.768. 2sc5470.pdf Size:42K _hitachi

or Current I (A) Collector Current I (A) C C Collector to Emitter Saturation Voltage vs. Base Current Fall Time vs. Base Current 0.8 10 I = 8 A CP I = 6 A C f = 64 kHz H 0.6 Tc = 25�C 8 A 0.4 5 10 A 0.2 Tc = 25�C 0 0 0.1 0.2 0.5 1 2 5 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 Base Current I (A) B Base Current I (A) B1 4 CE(sat) BE(sat) V (V) V (V) Base to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (V) CE(sat) V f Fall Time t (�s) Collector

1.769. 2sc5480.pdf Size:33K _hitachi

ration Voltage vs. Base Current Fall Time vs. Base Current 0.8 10 I = 7 A CP f = 31.5 kHz H 0.6 Tc = 25�C 9 A 7 A 0.4 5 I = 5 A C 0.2 Tc = 25�C 0 0 0.1 0.2 0.5 1 2 5 10 1.0 1.4 1.8 2.2 2.6 3.0 3.4 Base Current I (A) B Base Current I (A) B1 4 CE(sat) BE(sat) V (V) V (V) Base to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (V) CE(sat) V f Fall Time t (�s) Collector to Emitter Saturation Voltage 2SC5480 Package Dimensions (Unit: mm)

1.770. 2sc5139.pdf Size:57K _hitachi

vs. Frequency S21 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 4 V , Zo = 50 Condition: VCE= 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 20 mA) (IC = 20 mA) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04

1.771. 2sc5390.pdf Size:30K _hitachi

t 0.5 Pulse Test 2 0.2 Ta = �25 �C 25 �C 1 Ta = �25 �C 0.1 0.5 25 �C 75 �C 0.05 75 �C 0.2 0.02 0.01 0.1 1 2 5 10 20 50 100 200 1 2 5 10 20 50 100 200 Collector Current IC (mA) Collector Current IC (mA) Collctor Output Capacitance vs. Collector to Base Voltage Gain Bandwidth vs. Collector Current 5 10 5 2 2 1 1 0.5 0.5 0.2 0.2 I = 0 , E VCE = 10 V f = 1MHz Pulse Test 0.1 0.1 1 2 5 10 20 50 100 200 1 2 5 10 20 50 100 Collector Current IC (mA) Collector to Ba

1.772. 2sc5759.pdf Size:92K _hitachi

llector Output Capacitance Cob (pF) 2SC5759 Power Gain vs. Collector Current Noise Figure vs. Collector Current 20 5 f = 900 MHz f = 900 MHz 16 4 VCE = 5 V 12 3 3 V VCE = 3 V 8 2 5 V 4 1 0 0 2 5 1 10 20 50 100 2 5 10 20 50 100 1 Collector Current IC (mA) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 f = 1 GHz 16 12 VCE = 5 V 3 V 8 4 0 1 2 5 10 20 100 50 Collector Current IC (mA) 4 Noise Figure NF (dB) Power Gain PG (dB) S Par

1.773. 2sc5225.pdf Size:29K _hitachi

Capacitance Cib (pF) Collector Output Capacitance Cob (pF) 2SC5225 Gain Bandwidth Product vs. Collector Current 1.5 VCE = 10 V VCE = 5 V 1.0 0.5 0 1 2 5 10 20 50 100 Collector Current I (mA) C 5 Gain Bandwidth Product f (GHz) T Unit: mm 4.8 � 0.3 3.8 � 0.3 0.60 Max 0.5 � 0.1 0.5 1.27 2.54 Hitachi Code TO-92 (1) JEDEC Conforms EIAJ Conforms Weight (reference value) 0.25 g 5.0 � 0.2 2.3 Max 0.7 12.7 Min Cautions 1. Hitachi neither warrants nor grants licens

1.774. 2sc5237.pdf Size:36K _hitachi

2 5 10 20 50 100 200 Collector Current I (mA) C Base to Emitter Saturation Voltage vs. Collector Current 10 I / I = 10 C B 5 2 �25�C 25�C 1 0.5 Tc = 75�C 0.2 0.1 1 2 5 10 20 50 100 200 Collector Current I (mA) C 4 FE DC Current Transfer Ratio h CE(sat) V (V) Collector to Emitter Saturation Voltage BE(sat) V (V) Base to Emitter Saturation Voltage 2SC5237 Collector Current vs. Base to Emitter Voltage 200 VCE = 10 V 100 50 Tc = 75�C 20 25�C �25�C 10 5

1.775. 2sc5555.pdf Size:46K _hitachi

ale: 4 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 Condition : Condition : VCE = 1 V , I = 5mA VCE = 1 V , I = 5mA C C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1 1.5 2 3

1.776. 2sc5251.pdf Size:35K _hitachi

Current IC (A) 4 FE DC Current Transfer Ratio h CE(sat) V (V) Collector to Emitter Saturation Voltage BE(sat) V (V) Base to Emitter Saturetion Voltage 2SC5251 Collector to Emitter Saturation Voltage vs. Base Current 10 Tc = 25 �C I = 4 A C 6 A 8 A 5 0 0.1 0.2 0.5 1 2 5 10 Base Current I (A) B Fall Time vs. Base Current 1.0 I = 6 A CP 0.8 f = 31.5 kHz H 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Base Current I (A) B1 Storage Time vs. Base Current 10 I = 6 A

1.777. 2sc5448.pdf Size:45K _hitachi

5 10 0.1 0.2 0.5 1 2 5 10 Collector Current I (A) Collector Current I (A) C C Collector to Emitter Saturation Voltage vs. Base Current Fall Time vs. Base Current 0.8 10 I = 5 A CP f = 64 kHz H I = 4 A 0.6 Tc = 25�C C 6 A 8 A 0.4 5 0.2 Tc = 25�C 0 0 0.1 0.2 0.5 1 2 5 10 0.4 0.8 1.2 1.6 2.0 2.4 Base Current I (A) B Base Current I (A) B1 4 CE(sat) BE(sat) V (V) V (V) Base to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (V) CE(sat) V f

1.778. 2sc5250.pdf Size:71K _hitachi

1.779. 2sc5022.pdf Size:42K _hitachi

1.780. 2sc5773.pdf Size:91K _hitachi

ure vs. Collector Current 20 5 f = 900 MHz f = 900 MHz 16 4 VCE = 5 V 12 3 VCE = 3 V 3 V 8 2 5 V 4 1 0 0 2 5 1 10 20 50 100 2 5 10 20 50 100 1 Collector Current IC (mA) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 f = 1 GHz 16 VCE = 5 V 12 3 V 8 4 0 1 2 5 10 20 100 50 Collector Current IC (mA) 4 Noise Figure NF (dB) Power Gain PG (dB) 2 21 S 21 Parameter |S | (dB) 2SC5773 S21 Paramter vs. Frequency S11 Parameter vs. Freq

1.781. 2sc5140.pdf Size:60K _hitachi

.8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 ? ? Condition: VCE= 5 V , Zo = 50 Condition: VCE= 5 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 10 mA) (IC = 10 mA) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4

1.782. 2sc5594.pdf Size:53K _hitachi

urrent IC (mA) 4 Noise Figure NF (dB) Power Gain PG (dB) S Parameter |S | (dB) 2 21 21 2SC5594 S21 Parameter vs. Frequency S11 Parameter vs. Frequency Scale: 10 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� -10 -5 -.2 -4 -30� -150� -3 -.4 -2 -60� -120� -.6 -1.5 -.8 -90� -1 Condition ; Condition ; VCE = 2 V , IC = 20 mA VCE = 2 V , I = 20 mA C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100

1.783. 2sc5081.pdf Size:25K _hitachi

uct standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi�s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,

1.784. 2sc5049.pdf Size:24K _hitachi

owever, contact Hitachi�s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly fo

1.785. 2sc5207.pdf Size:69K _hitachi

1.786. 2sc5631.pdf Size:75K _hitachi

10 20 100 50 Collector Current IC (mA) 4 Noise Figure NF (dB) Power Gain PG (dB) S Parameter |S | (dB) 2 21 21 2SC5631 S21 Paramter vs. Frequency S11 Parameter vs. Frequency Scale: 6 / div. 1 90 .8 1.5 .6 60 120 2 .4 3 30 4 150 .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180 0 -10 -5 -.2 -4 -30 -150 -3 -.4 -2 -60 -120 -.6 -1.5 -.8 -90 -1 Condition : Condition : VCE = 3 V , IC = 50 mA VCE = 3 V , I = 50 mA C 100 to 2000 MHz (100 MHz s

1.787. 2sc5080.pdf Size:48K _hitachi

CE = 5V f = 1 GHz 16 16 f = 2 GHz 12 12 f = 2 GHz 8 8 4 4 0 0 1 2 5 10 20 50 1 2 5 10 20 50 Collector Current I (mA) Collector Current I (mA) C C 4 Power Gain PG (dB) Noise Figure NF (dB) 2 2 21 21 21 21 S parameter |S | (dB) S parameter |S | (dB) 2SC5080 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150

1.788. 2sc5544.pdf Size:46K _hitachi

le: 4 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 Condition : Condition : VCE = 1 V , I = 5mA VCE = 1 V , I = 5mA C C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1 1.5 2 3

1.789. 2sc5247.pdf Size:64K _hitachi

2SC5247 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 4 V , Zo = 50 Condition: VCE= 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) 200 to 2000 MHz (200 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 20 mA) (IC = 20 mA) S22 Parameter vs. Frequency S12 Parameter vs

1.790. 2sc5078.pdf Size:45K _hitachi

4 VCE = 5V 0 0 1 2 5 10 20 50 1 2 5 10 20 50 Collector Current I (mA) Collector Current I (mA) C C 4 Power Gain PG (dB) Noise Figure NF (dB) 2 2 21 21 21 21 S parameter |S | (dB) S parameter |S | (dB) 2SC5078 S11 Parameter vs. Frequency S21 Parameter vs. Frequency Scale: 3 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90�

1.791. 2sc5772.pdf Size:90K _hitachi

vs. Collector Current 20 5 f = 900 MHz f = 900 MHz 16 4 VCE = 5 V VCE = 3 V 12 3 3 V 8 2 5 V 4 1 0 0 2 5 1 10 20 50 100 2 5 10 20 50 100 1 Collector Current IC (mA) Collector Current IC (mA) S21 Parameter vs. Collector Current 20 f = 1 GHz 16 VCE = 5 V 12 8 3 V 4 0 1 2 5 10 20 100 50 Collector Current IC (mA) 4 Power Gain PG (dB) Noise Figure NF (dB) 2 21 21 S Parameter |S | (dB) 2SC5772 S21 Paramter vs. Frequency S11 Parameter vs. Frequency

1.792. 2sc5138.pdf Size:47K _hitachi

8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1.0 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �.6 �120� �1.5 �.8 �1 �90� ? ? Condition: VCE= 5 V , Zo = 50 Condition: VCE= 5 V , Zo = 50 100 to 1000 MHz (100 MHz step) 100 to 1000 MHz (100 MHz step) (IC = 5 mA) (IC = 5 mA) (IC = 10 mA) (IC = 10 mA) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10

1.793. 2sc5554.pdf Size:49K _hitachi

.6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 Condition : Condition : VCE = 1 V , I = 5mA VCE = 1 V , IC = 5mA C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5

1.794. 2sc5079.pdf Size:25K _hitachi

rchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi�s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.

1.795. 2sc535.pdf Size:54K _hitachi

0 0.6 0.7 0.8 0.6 0.7 0.8 Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) Collector Output Capacitance vs. Collector to Base Voltage 1.5 f = 1 MHz IE = 0 1.3 1.1 0.9 0.7 0.5 0.3 1.0 3 10 30 Collector to Base Voltage VCB (V) 5 C C Collector Current I (mA) Collector Current I (mA) ob Collector Output Capacitance C (pF) 2SC535 Gain Bandwidth Product vs. Collector Current 1,000 VCE = 6 V 800 600 400 200 0 0.1 0.2 0.5 1.0 2 5 10 20 Collector Current

1.796. 2sc5023.pdf Size:11K _hitachi

Power Dissipation Curve 8 Tc 6 4 2 Ta 0 50 100 150 200 Temperature T (�C) Collector Power Dissipation Pc (W)

1.797. 2sc5543.pdf Size:46K _hitachi

4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 Condition : Condition : VCE = 1 V , I = 5mA VCE = 1 V , IC = 5mA C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 90� .8 1.5 60� .6 120� 2 .4 3 30� 150� 4 .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1

1.798. 2sc5628.pdf Size:69K _hitachi

) Power Gain PG (dB) S Parameter | S | (dB) 2 21 21 2SC5628 S21 Parameter vs. Frequency S11 Parameter vs. Frequency Scale: 5 / div. 1 90 .8 1.5 .6 60 120 2 .4 3 30 4 150 .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180 0 -10 -5 -.2 -4 -30 -150 -3 -.4 -2 -60 -120 -.6 -1.5 -.8 -90 -1 Condition : Condition : VCE = 1 V , IC = 5mA VCE = 1 V , I = 5mA C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22

1.799. 2sc5252.pdf Size:38K _hitachi

Pulse Test Tc = �25 �C 2 25 �C 1 0.5 75 �C 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Collector Current I (A) C 5 CE(sat) V (V) Collector to Emitter Saturation Voltage BE(sat) V (V) Base to Emitter Saturation Voltage 2SC5252 Collector to Emitter Saturation Voltage vs. Base Current 10 Tc = 25�C Pulse Test 8 6 I = 6 A C 8 A 4 10 A 12 A 2 0 0.1 0.2 0.5 1 2 5 10 Base Current I (A) B Fall Time vs. Base Current 1.0 Icp = 7 A 0.8 f = 31.5 kHz H Tc = 25�C 0.6 0.4

1.800. 2sc5025.pdf Size:11K _hitachi

1.801. 2sc5629.pdf Size:68K _hitachi

ain PG (dB) S Parameter | S | (dB) 2 21 21 2SC5629 S21 Parameter vs. Frequency S11 Parameter vs. Frequency Scale: 5 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� -10 -5 -.2 -4 -30� -150� -3 -.4 -2 -60� -120� -.6 -1.5 -.8 -90� -1 Condition : Condition : VCE = 1 V , IC = 5 mA VCE = 1 V , I = 5 mA C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Paramet

1.802. 2sc5545.pdf Size:45K _hitachi

21 2SC5545 S21 Parameter vs. Frequency S11 Parameter vs. Frequency Scale: 10 / div. 1 90� .8 1.5 .6 60� 120� 2 .4 3 30� 4 150� .2 5 10 .2 .4 .6 .8 1 1.5 2 3 4 5 10 0 180� 0� �10 �5 �.2 �4 �30� �150� �3 �.4 �2 �60� �120� �.6 �1.5 �.8 �90� �1 Condition : Condition : VCE = 3 V , I = 20 mA VCE = 3 V , I = 20 mA C C 100 to 2000 MHz (100 MHz step) 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency S22 Parameter vs. Frequency Scale: 0.04 / div. 1 9

1.803. 2sc5757.pdf Size:109K _hitachi

1 2 5 10 20 100 1 2 5 10 20 50 100 50 Collector Current IC (mA) Collector Current IC (mA) Rev.4, Jul. 2001, page 4 of 10 ob Gain Bandwidth Product f T (GHz) Collector Output Capacitance C (pF) 2 21 21 Power Gain PG (dB) S Parameter |S | (dB) 2SC5757 Noise Figure vs. Collector Current 5 VCE = 1V f = 900 MHz 4 3 2 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.4, Jul. 2001, page 5 of 10 Noise Figure NF (dB) 2SC5757 S21 Parameter vs. Frequency S11 P

1.804. 2sc5125.pdf Size:97K _mitsubishi

1.805. 2sc5039.pdf Size:63K _no

1.806. 2sc5287.pdf Size:24K _no

esistance ? j-a (?C/W) Collector Current I C (A) Collector Current I C (A) Maximum Power Dissipation P C (W) 600mA 700mA 400mA 250mA 150mA 50 � s 100 � s With Infinite heatsink

1.807. 2sc5585.pdf Size:198K _secos

1.808. 2sc5345.pdf Size:698K _secos

1.809. bc546-547-548.pdf Size:817K _secos

of 4 BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 3 of 4 BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 04-Mar-2011 Rev. B Page 4 of 4

1.810. bc556-557-558.pdf Size:308K _secos

ECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 FE h , DC CURRENT GAIN C I [mA], COLLECTOR CURRENT C I [mA], COLLECTOR CURRENT BE CE V (sat), V (sat)[V], SATURATION VOLTAGE ob C (pF), CAPACITANCE T f [MHz], CURRENT GAIN-BANDWIDTH PRODUCT BC556, B, C BC557, A, B, C Elektronische Bauelemente BC558, A, B,

1.811. 2sc5658.pdf Size:455K _secos

1.812. 2sc5344.pdf Size:292K _secos

1.813. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

1.814. kd366-a-b_kd367-a-b_kc510_ku601_ku602_ku605_ku606_ku607_ku608_ku611_ku612_su160_su161_su167_su169.pdf Size:135K _tesla

1.815. gd607_gd608_gd609_ad161_gd617_gd618_gd619_ad162_oc30_2nu73_3nu73_4nu73_5nu73_6nu73_7nu73_2nu72_3nu72_4nu72_5nu72_oc26_oc27_2nu74_3nu74_4nu74_5nu74_6nu74_7nu74_gc500_gc501_gc502_gc510_gc511_gc512.pdf Size:171K _tesla

1.816. gc520-k_gc521-k_gc522-k_bc413b-c_kc147_kc148_kc149_kc237a-b-v_kc238a-b-c_kc239f-b-c_kc507_kc508_kc509_kc635_kc637_kc639.pdf Size:148K _tesla

1.817. 2sc5626.pdf Size:278K _isahaya

lector output/input capacitance Gain band width product ??????-???????? ?????-??????? VS. Collector to Base Voltage VS. Emitter current 10000 100.0 VCE=5V f=1MHz IE=0A Ta=25? IC=0A Ta=25? 1000 10.0 Cob 1.0 100 Cib 0.1 10 0.11.010.0 100.0 0.1 1 10100 ???????????V (V) CB collector to base voltage VCB(V) ?????? I E (mA) emitter current IE(mA) ???????????V (V) emitter to base voltage VEB(V) EB ISAHAYA ELECTRONICS?CORPORATION ? ?Transistor? 2SC5626 For High Frequen

1.818. 2sc5168.pdf Size:120K _isahaya

1.819. 2sc5882.pdf Size:115K _isahaya

1200.00 0.283 158.8 0.182 63.2 2.631 59.2 0.302 -54.4 1300.00 0.287 154.2 0.197 61.9 2.440 55.9 0.303 -56.7 1400.00 0.282 150.7 0.211 61.4 2.282 53.2 0.306 -58.9 1500.00 0.278 146.5 0.222 60.8 2.142 50.2 0.307 -61.3 1600.00 0.285 142.4 0.236 59.2 2.030 47.4 0.310 -63.3 1700.00 0.286 138.8 0.249 57.9 1.923 44.7 0.321 -65.5 1800.00 0.286 135.1 0.263 56.8 1.832 42.0 0.322 -67.8 1900.00 0.288 131.4 0.274 55.8 1.751 39.5 0.325 -69.8 2000.00 0.287 128.8 0.288 55.0 1.677 37.0 0.330 -72.4 S11

1.820. 2sc5211.pdf Size:60K _isahaya

1.821. 2sc5484.pdf Size:100K _isahaya

1.822. 2sc5396.pdf Size:113K _isahaya

ibutor for further details on these materials or the products contained therein.

1.823. 2sc5214.pdf Size:155K _isahaya

ese materials or the products contained therein.

1.824. 2sc5807.pdf Size:78K _isahaya

WARD CURRENT GAIN VS. COLLECTER CURRENT(?) VS. COLLECTER CURRENT(?) 10,000 10,000 Ta=25? VCE=1V 1,000 1,000 VCE=5V Ta=100? 2V 25? 1V 100 -25? 100 10 10 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 COLLECTER CURRENT?I(A) C COLLECTER CURRENT?I(A) C ISAHAYA?ELECTRONICS?CORPORATION C C COLLECTER CURRENT?I (A) COLLECTER CURRENT?I (A) FE FE DC FORWARD CURRENT GAIN?h DC FORWARD CURRENT GAIN?h ? ? Transistor DEVELOPING 2SC5807 For strobe,DC/DC convertor Application Silicon

1.825. 2sc5209.pdf Size:146K _isahaya

ibutor for further details on these materials or the products contained therein.

1.826. 2sc5477.pdf Size:116K _isahaya

ibutor for further details on these materials or the products contained therein.

1.827. 2sc5804.pdf Size:374K _isahaya

re reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials �These materials are intended as a reference to ou

1.828. 2sc5619.pdf Size:146K _isahaya

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1.829. 2sc5482.pdf Size:105K _isahaya

ibutor for further details on these materials or the products contained therein.

1.830. 2sc5620.pdf Size:236K _isahaya

sahaya Semiconductor product distributor for further details on these materials or the products contained therein.

1.831. 2sc5210.pdf Size:169K _isahaya

ese materials or the products contained therein.

1.832. 2sc5169.pdf Size:113K _isahaya

1.833. 2sc5213.pdf Size:76K _isahaya

1.834. 2sc5398.pdf Size:96K _isahaya

ese materials or the products contained therein.

1.835. 2sc5395.pdf Size:119K _isahaya

ibutor for further details on these materials or the products contained therein.

1.836. 2sc5383.pdf Size:121K _isahaya

hese materials or the products contained therein.

1.837. 2sc5384.pdf Size:221K _isahaya

ics Corporation or an authorized Isahaya Semiconductor product distributor for further details on these materials or the products contained therein.

1.838. 2sc5212.pdf Size:161K _isahaya

ese materials or the products contained therein.

1.839. 2sc5485.pdf Size:89K _isahaya

ese materials or the products contained therein.

1.840. bc516.pdf Size:339K _kec

1.841. ktc5103d_l.pdf Size:400K _kec

H INCREASE IN TEMPERATURE 0.1 0 13 5 10 30 50 100 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) IC - VCE h - I FE C 10 1k 500 300 VCE =2V 8 VCE =1V 100 6 50 30 I =20mA B 4 10 I =10mA B 5 2 3 I =0mA B 1 0 0.4 0.8 1.2 1.6 2.0 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I (A) C 2003. 3. 27 Revision No : 3 2/3 C T C I DERATING d (%) POWER DISSIPATION P (W) C C CEO V (SUS) COLLECTOR C

1.842. bc517.pdf Size:35K _kec

1.843. ktc5027.pdf Size:447K _kec

1.844. bc546_bc547_bc548.pdf Size:277K _kec

1.845. ktc5706d-l.pdf Size:794K _kec

. 6. 22 Revision No : 1 3/4 KTC5706D/L 2006. 6. 22 Revision No : 1 4/4

1.846. ktc5027f.pdf Size:454K _kec

1.847. ktc5242a.pdf Size:85K _kec

T I (A) C C 2004. 11. 26 Revision No : 0 2/3 C C COLLECTOR CURRENT I (A) COLLECTOR CURRENT I (A) FE CE(sat) DC CURRENT GAIN h VOLTAGE V (V) COLLECTOR-EMITTER SATURATION T BE(sat) VOLTAGE V (V) BASE-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) -25 C a= Ta=100 C Ta=25 C T -25 C Ta= KTC5242A r - tw Pc - Ta th 160 CURVES SHOULD BE APPLIED IN Tc=Ta THERMAL LIMITED AREA. INFINITE HEAT SINK (SINGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 120 2 NO HEAT

1.848. bc559_bc560.pdf Size:28K _kec

1.849. bc556_bc557_bc558.pdf Size:274K _kec

1.850. ktc5242.pdf Size:85K _kec

(A) C C 2004. 8. 19 Revision No : 1 2/3 C C COLLECTOR CURRENT I (A) COLLECTOR CURRENT I (A) FE CE(sat) DC CURRENT GAIN h VOLTAGE V (V) COLLECTOR-EMITTER SATURATION T BE(sat) VOLTAGE V (V) BASE-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) -25 C a= Ta=100 C Ta=25 C T -25 C Ta= KTC5242 r - tw Pc - Ta th 160 CURVES SHOULD BE APPLIED IN Tc=Ta THERMAL LIMITED AREA. INFINITE HEAT SINK (SINGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 120 2 NO HEAT SINK

1.851. ktc5197.pdf Size:270K _kec

1.852. ktc5001d_l.pdf Size:401K _kec

00 500 -100 300 VCE =5V IC /IB =80 -30 2V 1V 50 100 20 -10 50 -3 30 -0.01 -0.1 -1 -10 -20 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 -20 COLLECTOR CURRENT I (A) COLLECTOR CURRENT I (A) C C f - I Cob - VCB T E 1K 1K Ta=25 C Ta=25 C VCE=5V f=1MHz 500 500 I =0A f=50MHz E 300 300 100 50 100 30 50 10 30 -0.01 -0.03 -0.1 -0.3 -1 -3 0.1 0.3 1 3 10 30 EMITTER CURRENT I (A) COLLECTOR BASE VOLTAGE VCB (V) E 2003. 3. 27 Revision No : 5 2/3 C C COLLECTOR CURRENT I (A) COLLE

1.853. ktc5707d_l.pdf Size:406K _kec

o : 2 2/4 KTC5707D/L I - VCE VCE(sat) - IC C 7 1000 100mA 90mA 6 5 Ta=75 C 100 4 20mA 25 C 3 10mA 10 -25 C 2 1 IB = 0mA IC/IB = 20 0 1.0 0 0.4 0.8 1.2 1.6 2.0 0.01 0.1 110 COLLECTOR-EMITTER VOLTAGE, VCE (V) COLLECTOR CURRENT IC (A) IC - VBE VBE(sat) -IC 8 10 VCE=2V IC/IB = 50 7 6 Ta=75 C 25 C 5 -25 C 4 1.0 -25 C 3 Ta=75 C 25 C 2 1 0.1 0 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR CURRENT IC (A) BASE-EMITTER VOLTAGE VBE (V) Cob-VCB h - I

1.854. ktc5706.pdf Size:404K _kec

25 C Ta=75 C 2.5 -25 C 2 1.0 -25 C 1.5 Ta=75 C 25 C 1 0.5 0.1 0 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) hFE - IC Cob-VCB 1000 500 VCE=2V f=1MHz Ta=75 C 100 -25 C 25 C 100 10 10 1 0.1 1.0 10 0.1 1.0 10 100 0.01 COLLECTOR CURRENT IC (A) COLLECTOR-BASE VOLTAGE VCB (V) 2006. 10. 10 Revision No : 0 3/4 C CE (sat) COLLECTOR-EMITTER COLLECTOR CURRENT I (A) SATURATION VOLTAGE V (mV) C BE(sat) V (V) COL

1.855. 2sc5124.pdf Size:24K _sanken-ele

A B I 100 � s With Infinite heatsink

1.856. 2sc5100.pdf Size:24K _sanken-ele

finite heatsink DC

1.857. 2sc5370.pdf Size:12K _sanken-ele

1.858. 2sc5130.pdf Size:24K _sanken-ele

Collector Current I C (A) Collector Current I C (A) Maximum Power Dissipation P C (W) 800mA 500mA 300mA 150mA 25?C (Case Temp) 125?C (Case Temp) �55?C (Case Temp) 50 � s 100 With Infinite heatsink � s

1.859. 2sc5271.pdf Size:15K _sanken-ele

1.860. 2sc5249.pdf Size:24K _sanken-ele

Collector Current I C (A) Maximum Power Dissipation P C (W) 300mA 200mA 100mA 50mA 125?C (Case Temp) 25?C (Case Temp) �55?C (Case Temp) 100 � s With Infinite heatsink

1.861. 2sc5333.pdf Size:22K _sanken-ele

1.862. 2sc5099.pdf Size:24K _sanken-ele

1.863. 2sc5071.pdf Size:25K _sanken-ele

rrent I C (A) Collector Current I C (A) Maximum Power Dissipation P C (W) 1A 800mA 600mA �55?C (Case Temp) 400mA 25?C (Case Temp) ) p 200mA 125?C (Case Temp) m e T e s a 25?C C ( C ? 5 2 1 25?C (Case Temp) 125?C (Case Temp) �55?C (Case Temp) �55?C 100 � s With Infinite heatsink

1.864. 2sc5002.pdf Size:24K _sanken-ele

r Current I C (A) Maximum Power Dissipation P C (W) 1.2A 1.5A 700mA 400mA 200mA =100mA B I 25?C (Case Temp) 125?C (Case Temp) �30?C (Case Temp) 125?C 25?C �30?C With Infinite heatsink

1.865. 2sc5003.pdf Size:25K _sanken-ele

Thermal Resistance ? j-a (?C/W) Collector Current I C (A) Collector Current I C (A) Maximum Power Dissipation P C (W) 1.4A 1.7A 900mA 600mA =100mA B I 125?C (Case Temp) 25?C (Case Temp) �30?C (Case Temp) 125?C 25?C �30?C With Infinite heatsink

1.866. 2sc5287.pdf Size:24K _sanken-ele

esistance ? j-a (?C/W) Collector Current I C (A) Collector Current I C (A) Maximum Power Dissipation P C (W) 600mA 700mA 400mA 250mA 150mA 50 � s 100 � s With Infinite heatsink

1.867. 2sc5239.pdf Size:23K _sanken-ele

I C (A) Maximum Power Dissipation P C (W) 300mA 400mA 200mA 150mA 100mA =40mA B I 50 � s 100 � s With Infinite heatsink

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nk 100ms DC

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1.951. bc546_bc547_bc548.pdf Size:1074K _wietron

J J 1.270TYP K K 2.44 2.64 L 14.10 14.50 G WEITRON 5/5 http://www.weitron.com.tw H L B A D

1.952. 2sc5706.pdf Size:190K _wietron

0 10 10 0.01 0.1 1.0 10 0.01 0.1 1.0 10 Collector Current, IC (A) Collector Current, IC (A) FIG.3 hFE - IC FIG.4 VCE(sat) - IC 10 10000 IC / IB = 50 IC / IB = 50 1000 1.0 Ta=-25?C 100 10 0.1 0.01 0.1 1.0 10 0.01 0.1 1.0 10 Collector Current, IC (A) Collector Current, IC (A) FIG.5 VCE(sat) - IC FIG.6 VBE(sat) - IC WEITRON 3/5 25-Aug-05 http://www.weitron.com.tw C C Collector Current, I (A) Collector Current, I (A) FE CE(sat) DC Current Gain, h Collector-to-Emitter S

1.953. bc5347b.pdf Size:146K _wietron

3 0.4 0.2 0.3 VCE(sat)@IC/BC=10 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) FIG.1 Normalized DC Current Gain FIG.2 "Saturation" And "On" Voltage 1.0 2.0 TA=25 C -55 C to +125 C 1.2 1.6 1.6 IC= 200mA 1.2 2.0 IC= IC= 100mA 0.8 IC=-50mA 2.4 10mA 2.8 0.4 IC= 20mA 0 0.2 1.0 10 100 0.02 0.1 1.0 10 20 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)

1.954. bc556_bc557_bc558.pdf Size:2241K _wietron

B 1.40 1.10 C 0.55 0.38 D 0.51 0.36 E 4.70 4.40 G - 3.43 H 4.70 4.30 J J 1.270TYP K K 2.44 2.64 L 14.10 14.50 G WEITRON 5/5 26-Apr-05 http://www.weitron.com.tw H L B A D

1.955. 2sc5344.pdf Size:715K _wietron

1.956. hbc517.pdf Size:45K _hsmc

ge & Collector Current 100000 1000 CE(sat) C B CE V @ I =100I hFE @ V =2V 75oC 100 125oC 25oC 125oC 75oC 25oC 10000 10 1 10 100 1000 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current On Voltage & Collector Current 10000 10000 BE(on) CE V @ V =2V BE(sat) C B V @ I =100I 25oC 25oC 1000 1000 125oC 75oC 125oC 75oC 100 100 1 10 100 1000 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) PD - Ta 0.7 0.6 0.5

Otros transistores... C424 , C425 , C426 , C428 , C434 , C441 , C442 , C450 , KD602 , C50-28 , C5-8 , C5-8Z , C5T2192 , C5T2432 , C5T2484 , C5T2605 , C5T2944 .


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