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C5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C5

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15

Tensión colector-base (Ucb): 50

Tensión colector-emisor (Uce): 45

Tensión emisor-base (Ueb): 3

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 125

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 135

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar C5

C5 PDF:

1.1. bc517rev.pdf Size:206K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC517/D Darlington Transistors NPN Silicon BC517 COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 17 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCES 30 Vdc CollectorBase Voltage VCB 40 Vdc EmitterBase Voltage VEB 10 Vdc Collector Current Continuous IC 1.0 Adc Total Po

1.2. bc559_bc560.pdf Size:107K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC559/D Low Noise Transistors PNP Silicon BC559, B, C BC560C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC559 BC560 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 30 45 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Curren

1.3. bc556_bc557_bc558_2.pdf Size:220K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

1.4. bc549_bc550.pdf Size:110K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC549B/D Low Noise Transistors NPN Silicon BC549B,C BC550B,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC549 BC550 Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 30 45 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current C

1.5. bc556_bc557_bc558.pdf Size:159K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC556/D Amplifier Transistors BC556,B PNP Silicon BC557A,B,C COLLECTOR BC558B 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 BC BC BC 3 556 557 558 Rating Symbol Unit CASE 2904, STYLE 17 CollectorEmitter Voltage VCEO 65 45 30 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Voltage VEBO

1.6. bc546_bc547_bc548.pdf Size:193K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC546/D Amplifier Transistors BC546, B NPN Silicon BC547, A, B, C BC548, A, B, C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 546 547 548 Rating Symbol Unit CASE 2904, STYLE 17 TO92 (TO226AA) CollectorEmitter Voltage VCEO 65 45 30 Vdc CollectorBase Voltage VCBO 80 50 30 Vdc EmitterBase Volta

1.7. bc516_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

1.8. bc516.pdf Size:44K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

1.9. bc556_bc557.pdf Size:246K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC556; BC557 PNP general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 collector

1.10. bc546_bc547_3.pdf Size:53K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC546; BC547 NPN general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN general purpose transistors BC546; BC547 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 coll

1.11. bc846_bc546_ser.pdf Size:373K _philips

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BC846/BC546 series 65 V, 100 mA NPN general-purpose transistors Rev. 07 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC846 SOT23 - TO-236AB BC856 BC846W SOT323 SC-70 - BC856W BC846T SOT416

1.12. bc559_4.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC559 PNP general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Jun 03 Philips Semiconductors Product specification PNP general purpose transistor BC559 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 emitter 2 base APPLICATIONS 3 collector General

1.13. bfc505_2.pdf Size:65K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor 1996 Oct 08 Product specification Supersedes data of 1995 Sep 01 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 FEATURES PINNING - SOT353 Small size PIN SYMBOL DESCRIPTION High power gain at low bias current and high 1b2 base 2

1.14. bc549.pdf Size:44K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 coll

1.15. jc549_jc550_cnv_2.pdf Size:53K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC549; JC550 NPN general purpose transistors 1997 Jul 08 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors JC549; JC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45

1.16. jc501_3.pdf Size:48K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC501 NPN general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 Mar 17 Philips Semiconductors Product specification NPN general purpose transistor JC501 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base 2 collector APPLICATIONS 3 emitter General

1.17. bc549_bc550.pdf Size:231K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 22 NXP Semiconductors Product data sheet NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 collector

1.18. jc556_jc557_jc558_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC556; JC557; JC558 PNP general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 collector APPL

1.19. jc546_jc547_jc548_3.pdf Size:51K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC546; JC547; JC548 NPN general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Mar 14 Philips Semiconductors Product specification NPN general purpose transistors JC546; JC547; JC548 FEATURES PINNING Low current max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 collector APPLI

1.20. bc556_bc557_3.pdf Size:53K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC556; BC557 PNP general purpose transistors 1999 Apr 15 Product specification Supersedes data of 1997 Mar 27 Philips Semiconductors Product specification PNP general purpose transistors BC556; BC557 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 emitter 2 base APPLICATIONS 3 coll

1.21. bc517_4.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

1.22. bfc520_3.pdf Size:83K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor 1997 Sep 10 Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN wideband cascode transistor BFC520 FEATURES PINNING - SOT353 Small size SYMBOL PIN DESCRIPTION High power gain at low bias current and high b2 1 base 2

1.23. bc546_bc547.pdf Size:38K _philips

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Phi I i ps Semi c?nduct ?rsPr?duct speci ficat i ?n Phi l i ps Semi conduct ors Product speci ficat i on NPN generaI purp?se t ransi st ?rsBC546; BC547 NPN gener al purpose t ransist orsBC546; BC547 FEATURES PI NNI NG THERMAL CHARACTERI STI CS Low cur r ent (max. 100mA) PINDESCRI PTI ON SYMBOLPARAMETERCONDI TI ONS VALUE UNI T Low vol t age (max. 65 V). 1 emi t t er Rthj-a t hermal resi s

1.24. jc559_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC559 PNP general purpose transistor 1999 Apr 27 Product specification Supersedes data of 1997 Jul 09 Philips Semiconductors Product specification PNP general purpose transistor JC559 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 30 V). 1 base 2 collector APPLICATIONS 3 emitter General

1.25. bc847_bc547_ser.pdf Size:97K _philips

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BC847/BC547 series 45 V, 100 mA NPN general-purpose transistors Rev. 07 10 December 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in small plastic packages. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA JEDEC BC847 SOT23 - TO-236AB BC857 BC847A BC857A BC847B BC857B BC847B/DG - BC847C BC857C BC847W SOT3

1.26. bc517.pdf Size:43K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 30 V) 1 emitter Very high DC current gain (min. 30000). 2 base 3 c

1.27. bc549_bc550_3.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors 1999 Apr 22 Product specification Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors BC549; BC550 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 base APPLICATIONS 3 coll

1.28. ppc5001t_2.pdf Size:58K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET PPC5001T NPN microwave power transistor 1997 Mar 03 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor PPC5001T FEATURES PINNING - SOT447A Diffused emitter ballasting resistors providing excellent PIN DESCRIPTION current sharing

1.29. stc5nf30v.pdf Size:324K _st

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STC5NF30V N-channel 30V - 0.027? - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET General features Type VDSS RDS(on) ID < 0.031 ? ( @ 4.5 V ) STC5NF30V 30V 5A < 0.035 ? ( @ 2.7 V ) Ultra low threshold gate drive (2.7V) Standard outline for easy automated surface TSSOP8 mount assembly Description This Power MOSFET is the latest development of Internal schematic diagram STMicr

1.30. stb8nc50.pdf Size:441K _st

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STB8NC50 N-CHANNEL 500V - 0.7? - 8A D2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STB8NC50 500V < 0.85 ? 8 A TYPICAL RDS(on) = 0.7? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 1 GATE CHARGE MINIMIZED DESCRIPTION D2PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly im

1.31. std2nc50.pdf Size:442K _st

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STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3? - 2.2A DPAK/IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V < 4 ? 2.2 A STD2NC50-1 500 V < 4 ? 2.2 A TYPICAL RDS(on) = 3 ? 3 3 EXTREMELY HIGH dv/dt CAPABILITY 1 2 100% AVALANCHE TESTED 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESHII is the evolution of the first generation of MES

1.32. 2sc5200.pdf Size:148K _st

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2SC5200 High power NPN epitaxial planar bipolar transistor Preliminary data Features High breakdown voltage VCEO = 230 V Typical fT = 30 MHz Application Audio power amplifier 3 2 1 Description TO-264 This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviou

1.33. bc547b_bc547c.pdf Size:60K _st

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BC547B BC547C SMALL SIGNAL NPN TRANSISTORS Ordering Code Marking Package / Shipment BC547B BC547B TO-92 / Bulk BC547B-AP BC547B TO-92 / Ammopack BC547C BC547C TO-92 / Bulk BC547C-AP BC547C TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 BC547B - THE PNP COMPLEMENTARY Bulk Ammopack TYPE IS BC557B APPLIC

1.34. bc557b.pdf Size:70K _st

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BC557B SMALL SIGNAL PNP TRANSISTOR Ordering Code Marking Package / Shipment BC557B BC557B TO-92 / Bulk BC557B-AP BC557B TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE IS BC547B TO-92 TO-92 Bulk Ammopack APPLICATIONS WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH T

1.35. stp10nc50(fp).pdf Size:149K _st

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STP10NC50 STP10NC50FP N - CHANNEL 500V - 0.48? - 10A - TO-220/TO-220FP PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STP10NC50 500 V < 0.52 ? 10 A STP10NC50FP 500 V < 0.52 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 DESCRIPTION Using the latest high

1.36. 2stc5949.pdf Size:148K _st

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2STC5949 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2121 Typical ft = 25 MHz Fully characterized at 125 oC Application Audio power amplifier TO-264 Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amplifier)

1.37. stc5dnf30v.pdf Size:292K _st

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STC5DNF30V N-channel 30 V, 0.027 ?, 5 A TSSOP8 2.7 V - driver STripFET Power MOSFET Features Type VDSS RDS(on) max ID < 0.031 ? ( @ 4.5 V ) STC5DNF30V 30V 5 A < 0.035 ? ( @ 2.7 V ) Ultra low threshold gate drive (2.7 V) Standard outline for easy automated surface TSSOP8 mount assembly Applications Switching application Figure 1. Internal schematic diagram Description This P

1.38. 2stc5242.pdf Size:183K _st

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2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-3P Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

1.39. sts8c5h30l.pdf Size:463K _st

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STS8C5H30L N-channel 30 V, 0.018 ?, 8 A, P-channel 30 V, 0.045 ?, 5 A SO-8 low gate charge STripFET III MOSFET Features RDS(on) Type VDSS ID max STS8C5H30L(N-channel) 30 V < 0.022 ? 8 A STS8C5H30L(P-channel) 30 V < 0.055 ? 5 A Conduction losses reduced Switching losses reduced SO-8 Low threshold drive Standard outline for easy automated surface mount assembly Application

1.40. stp4nc50(fp).pdf Size:324K _st

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STP4NC50 STP4NC50FP N-CHANNEL 500V - 2.2? - 3.5A TO-220/TO-220FP PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP4NC50 500 V < 2.7 ? 3.5 A STP4NC50FP 500 V < 2.7 ? 3.5 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESHII is the evolution of the firs

1.41. stp5nc50,stb5nc50.pdf Size:534K _st

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STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3? - 5.5A TO-220/FP/D2PAK/I2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP5NC50 500 V <1.5? 5.5A STP5NC50FP 500 V <1.5? 5.5A STB5NC50 500 V <1.5? 5.5A 3 STB5NC50-1 500 V <1.5? 5.5A 1 TYPICAL RDS(on) = 1.3? D2PAK TO-220 TO-220FP EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE

1.42. 2stc5948.pdf Size:151K _st

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2STC5948 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Typical ft = 25 MHz Fully characterized at 125 oC 3 Application 2 1 Audio power amplifier TO-3P Description The device is a NPN transistor manufactured Figure 1. Internal schematic diagram using new BiT-LA (Bipolar transistor for linear amp

1.43. stp8nc50-fp--1.pdf Size:352K _st

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STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7? - 8A TO-220/TO-220FP/I2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP(B)8NC50(-1) 500 V < 0.85 ? 8 A STP8NC50FP 500 V < 0.85 ? 8 A TYPICAL RDS(on) = 0.7 ? 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 100% AVALANCHE TESTED TO-220 TO-220FP NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION I?PAK The PowerMESH

1.44. 2stc5200.pdf Size:182K _st

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2STC5200 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz Application 3 2 1 Audio power amplifier TO-264 Description This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor

1.45. ste53nc50.pdf Size:278K _st

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STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMeshII MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatl

1.46. stc5nf20v.pdf Size:283K _st

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STC5NF20V N-channel 20V - 0.030? - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET Features Type VDSS RDS(on) ID < 0.040 ? (@ 4.5 V) STC5NF20V 20V 5A < 0.045 ? (@ 2.7 V) Ultra low threshold gate drive (2.7V) Standard outline for easy automated surface TSSOP8 mount assembly Application Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET

1.47. stp3nc50.pdf Size:238K _st

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STP3NC50 N-CHANNEL 500V - 3? - 2.8A TO-220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STP3NC50 500 V < 4 ? 2.8 A TYPICAL RDS(on) = 3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 The PowerMESHII is the evolution of the first TO-220 generation of MESH OVERLAY. The layout re- finements introduced great

1.48. stb4nc50.pdf Size:244K _st

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STB4NC50 N-CHANNEL 500V - 2.2? - 4A D2PAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STB4NC50 500V < 2.7? 4 A TYPICAL RDS(on) = 2.2 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 1 DESCRIPTION D?PAK The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced greatly im

1.49. stw20nc50.pdf Size:249K _st2

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STW20NC50 N-CHANNEL 500V - 0.22? - 18.4A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STW20NC50 500V < 0.27? 18.4A TYPICAL RDS(on) = 0.22? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION The PowerMESHII is the evolution of the first TO-247 generation of MESH OVERLAY. The layout re- finements introdu

1.50. stu13nc50.pdf Size:258K _st2

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STU13NC50 N-CHANNEL 500V - 0.31? - 13A Max220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STU13NC50 500V < 0.4 ? 13 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 2 GATE CHARGE MINIMIZED 1 Max220 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

1.51. stu16nc50.pdf Size:260K _st2

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STU16NC50 N-CHANNEL 500V - 0.22? - 16A Max220 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STU16NC50 500V < 0.27? 16 A TYPICAL RDS(on) = 0.22? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 2 GATE CHARGE MINIMIZED 1 Max220 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

1.52. stw14nc50.pdf Size:266K _st2

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STW14NC50 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID STW14NC50 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

1.53. 2sc5368.pdf Size:187K _toshiba

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1.54. 2sc5111.pdf Size:245K _toshiba

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2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature Tj

1.55. 2sc5439.pdf Size:123K _toshiba

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2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications Unit: mm High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Excellent switching times: tr = 0.2 s (typ.), tf = 0.15 s (typ.) High collector breakdown voltage: VCEO = 450 V Maximum Ratings (Tc = 25C) Characteristics Symbol Rat

1.56. 2sc5949.pdf Size:255K _toshiba

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2SC5949 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5949 Power Amplifier Applications Unit: mm PC = 220W Complementary to 2SA2121 Maximum Ratings (Tc = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissip

1.57. 2sc5000.pdf Size:179K _toshiba

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1.58. 2sc5588.pdf Size:331K _toshiba

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2SC5588 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5588 Unit: mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC

1.59. 2sc5093.pdf Size:300K _toshiba

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2SC5093 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5093 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base c

1.60. 2sc5716.pdf Size:304K _toshiba

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2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO

1.61. 2sc5086.pdf Size:474K _toshiba

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2SC5086 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.62. 2sc5030.pdf Size:211K _toshiba

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1.63. 2sc5315.pdf Size:125K _toshiba

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1.64. 2sc5464.pdf Size:124K _toshiba

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2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector

1.65. 2sc5256.pdf Size:164K _toshiba

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1.66. 2sc5353.pdf Size:207K _toshiba

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1.67. 2sc5331.pdf Size:185K _toshiba

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1.68. 2sc5171.pdf Size:113K _toshiba

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2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 180 V Emitter-base voltage VEBO 5 V Co

1.69. 2sc5563.pdf Size:116K _toshiba

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1.70. 2sc5352.pdf Size:188K _toshiba

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1.71. 2sc5712.pdf Size:146K _toshiba

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2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteris

1.72. 2sc5066.pdf Size:466K _toshiba

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2SC5066 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.73. 2sc5108ft.pdf Size:133K _toshiba

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2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature

1.74. 2sc5361.pdf Size:206K _toshiba

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1.75. 2sc5108.pdf Size:242K _toshiba

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2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj

1.76. 2sc5323.pdf Size:122K _toshiba

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1.77. 2sc5497.pdf Size:246K _toshiba

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1.78. 2sc5094.pdf Size:296K _toshiba

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2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base c

1.79. 2sc5089.pdf Size:465K _toshiba

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2SC5089 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5089 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.80. 2sc5259.pdf Size:182K _toshiba

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1.81. 2sc5307.pdf Size:173K _toshiba

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1.82. 2sc5201.pdf Size:114K _toshiba

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1.83. 2sc5376.pdf Size:260K _toshiba

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2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low collector saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High collector current: I = 400 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Coll

1.84. 2sc5713.pdf Size:159K _toshiba

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2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) f Maximum Ratings (Ta = = 25

1.85. 2sc5150.pdf Size:210K _toshiba

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1.86. 2sc5930.pdf Size:142K _toshiba

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2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC5930 High-Speed and High-Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.3 ?s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitt

1.87. 2sc5976.pdf Size:178K _toshiba

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2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 3 2 Absolute M

1.88. 2sc5360.pdf Size:116K _toshiba

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1.89. 2sc5086ft.pdf Size:125K _toshiba

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2SC5086FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5086FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base

1.90. 2sc5242.pdf Size:122K _toshiba

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2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm High Collector breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter vol

1.91. 2sc5098.pdf Size:298K _toshiba

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2SC5098 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5098 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.92. 2sc5612.pdf Size:341K _toshiba

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2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 2000 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 2000 V Collector-Emitter Voltage VCEO 900 V

1.93. 2sc5785.pdf Size:182K _toshiba

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2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25

1.94. 2sc5198.pdf Size:148K _toshiba

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2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter voltag

1.95. 2sc5324.pdf Size:123K _toshiba

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1.96. 2sc5091.pdf Size:469K _toshiba

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2SC5091 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.97. 2sc5260.pdf Size:220K _toshiba

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1.98. 2sc5208.pdf Size:167K _toshiba

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2SC5208 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5208 High-Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications High-speed switching: tr = 1.0 ?s (max) ,tf = 1.5 ?s (max) High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Coll

1.99. 2sc5386.pdf Size:317K _toshiba

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2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATING

1.100. 2sc5351.pdf Size:191K _toshiba

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1.101. 2sc5200.pdf Size:121K _toshiba

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2SC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V (min) CEO Complementary to 2SA1943 Suitable for use in 100-W high fidelity audio amplifiers output stage Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO

1.102. 2sc5279.pdf Size:124K _toshiba

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1.103. 2sc5088.pdf Size:481K _toshiba

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2SC5088 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5088 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.104. 2sc5175.pdf Size:183K _toshiba

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1.105. 2sc5548a.pdf Size:230K _toshiba

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2SC5548A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548A High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 40 (min) (I = 0.2 A) FE C Maximum Ratings (Ta

1.106. 2sc5464ft.pdf Size:125K _toshiba

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2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Colle

1.107. 2sc5048.pdf Size:209K _toshiba

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1.108. 2sc5355.pdf Size:151K _toshiba

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2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tr = 0.5 s (max), t = 0.3 s (max) f High collector breakdown voltage: V = 400 V CEO High DC current gain: h = 20 (min) FE Maximum Ratings (Ta = 25C) Character

1.109. 2sc5028.pdf Size:218K _toshiba

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1.110. 2sc5106.pdf Size:238K _toshiba

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2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj

1.111. 2sc5550.pdf Size:208K _toshiba

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1.112. 2sc5590.pdf Size:297K _toshiba

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2SC5590 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5590 HORIZONTAL DEFLECTION OUTPUT FOR SUPER Unit: mm HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERIST

1.113. 2sc5280.pdf Size:344K _toshiba

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2SC5280 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5280 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold R

1.114. 2sc5110.pdf Size:246K _toshiba

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2SC5110 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature Tj

1.115. 2sc5149.pdf Size:193K _toshiba

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1.116. 2sc5172.pdf Size:191K _toshiba

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1.117. 2sc5859.pdf Size:200K _toshiba

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2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm HDTV, DIGITAL TV, PROJECTION TV High Voltage : V = 1700 V CBO Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (Typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Collector-Emitter

1.118. 2sc5445.pdf Size:343K _toshiba

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2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Colle

1.119. 2sc5052.pdf Size:118K _toshiba

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1.120. 2sc5256ft.pdf Size:104K _toshiba

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1.121. 2sc5254.pdf Size:177K _toshiba

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2SC5254 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5254 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Co

1.122. 2sc5387.pdf Size:318K _toshiba

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2SC5387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5387 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATING

1.123. 2sc5255.pdf Size:180K _toshiba

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2SC5255 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.5dB (f = 2 GHz) High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 1.5 V Co

1.124. 2sc5468.pdf Size:123K _toshiba

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1.125. 2sc5027.pdf Size:241K _toshiba

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1.126. 2sc5810.pdf Size:177K _toshiba

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2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.1 A) C Low collector-emitter saturation voltage: V = 0.17 V (max) CE (sat) High-speed switching: t = 85 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol

1.127. 2sc5266.pdf Size:164K _toshiba

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1.128. 2sc5886a.pdf Size:144K _toshiba

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2SC5886A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886A High-Speed Switching Applications Unit: mm DC/DC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 95 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base

1.129. 2sc5358.pdf Size:171K _toshiba

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1.130. 2sc5703.pdf Size:166K _toshiba

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2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = = 25

1.131. 2sc5321.pdf Size:122K _toshiba

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1.132. 2sc5111ft.pdf Size:132K _toshiba

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2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature

1.133. 2sc5459.pdf Size:186K _toshiba

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1.134. 2sc5948_061116.pdf Size:152K _toshiba

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2SC5948 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5948 Power Amplifier Applications Unit: mm Complementary to 2SA2120 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating Unit VCBO Collector-base voltage 200 V VCEO Collector-emitter voltage 200 V VEBO Emitter-base voltage 5 V Collector cu

1.135. 2sc5322ft.pdf Size:124K _toshiba

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2SC5322FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1

1.136. 2sc5748.pdf Size:321K _toshiba

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2SC5748 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5748 Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = 2000 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t = 0.15 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 2000 V Collector-emitter voltag

1.137. 2sc5064.pdf Size:468K _toshiba

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2SC5064 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5064 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.138. 2sc5263.pdf Size:103K _toshiba

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1.139. 2sc5091ft.pdf Size:125K _toshiba

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2SC5091FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5091FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5 V Base

1.140. 2sc5570.pdf Size:349K _toshiba

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2SC5570 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5570 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collec

1.141. 2sc5066ft.pdf Size:125K _toshiba

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2SC5066FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5066FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base

1.142. 2sc5075.pdf Size:219K _toshiba

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1.143. 2sc5339.pdf Size:335K _toshiba

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2SC5339 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5339 HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.2 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold R

1.144. 2sc5460.pdf Size:196K _toshiba

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1.145. 2sc5085.pdf Size:471K _toshiba

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2SC5085 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5085 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.146. 2sc5096.pdf Size:296K _toshiba

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2SC5096 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base c

1.147. 2sc5087.pdf Size:476K _toshiba

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2SC5087 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.148. 2sc5376fv_071101.pdf Size:155K _toshiba

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2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) 1.20.05 @IC = 10 mA/IB = 0.5 mA 0.80.05 High Collector Current: IC = 400 mA (max) 1 2 3 Absolute Maximum Ratings (Ta = 25C) Characte

1.149. 2sc5587.pdf Size:332K _toshiba

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2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Colle

1.150. 2sc5092.pdf Size:475K _toshiba

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2SC5092 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5092 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base c

1.151. 2sc5463.pdf Size:215K _toshiba

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2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector

1.152. 2sc5076.pdf Size:220K _toshiba

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1.153. 2sc5784.pdf Size:178K _toshiba

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2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Character

1.154. 2sc5266a.pdf Size:181K _toshiba

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1.155. 2sc5755.pdf Size:168K _toshiba

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2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteristic

1.156. 2sc5376ct_100418.pdf Size:137K _toshiba

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2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5376CT General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Applications 0.60.05 0.50.03 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) 3 @IC = 10 mA/IB = 0.5 mA Large collector current: IC = 400 mA (max) 1 2 Absolute Maximum Ratings (Ta = 25C) 0.350.02 0.050.03

1.157. 2sc5122.pdf Size:171K _toshiba

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1.158. 2sc5090.pdf Size:466K _toshiba

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2SC5090 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5090 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.159. 2sc5458.pdf Size:199K _toshiba

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2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times: tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage: V = 400 V CEO Maximum Ratings (Ta = 25

1.160. 2sc5129.pdf Size:210K _toshiba

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1.161. 2sc5589.pdf Size:298K _toshiba

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2SC5589 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5589 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit: mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collect

1.162. 2sc5096ft.pdf Size:125K _toshiba

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2SC5096FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5096FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 8 V Emitter-base voltage VEBO 1.5 V Bas

1.163. 2sc5446.pdf Size:340K _toshiba

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2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Colle

1.164. 2sc5692.pdf Size:167K _toshiba

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2SC5692 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5692 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.3 A) C Low collector-emitter saturation voltage: V = 0.14 V (max) CE (sat) High-speed switching: t = 120 ns (typ.) f Maximum Ratings (Ta = = 2

1.165. hn4c51j_071101.pdf Size:293K _toshiba

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HN4C51J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rat

1.166. 2sc5466.pdf Size:187K _toshiba

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1.167. 2sc5029.pdf Size:212K _toshiba

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1.168. 2sc5765.pdf Size:158K _toshiba

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2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base vol

1.169. 2sc5720.pdf Size:156K _toshiba

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2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Base volt

1.170. 2sc5144.pdf Size:206K _toshiba

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1.171. 2sc5154.pdf Size:198K _toshiba

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1.172. 2sc5197.pdf Size:171K _toshiba

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1.173. 2sc5173.pdf Size:230K _toshiba

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1.174. 2sc5738.pdf Size:160K _toshiba

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2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Characteri

1.175. 2sc5376f.pdf Size:145K _toshiba

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2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications Unit: mm For Muting and Switching Applications Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B High Collector Current: I = 400 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Co

1.176. 2sc5319.pdf Size:169K _toshiba

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2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Coll

1.177. hn3c56fu_071101.pdf Size:194K _toshiba

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HN3C56FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C56FU Unit: mm Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 C

1.178. 2sc5359.pdf Size:121K _toshiba

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2SC5359 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5359 Power Amplifier Applications Unit: mm High breakdown voltage: V = 230 V CEO Complementary to 2SA1987 Suitable for use in 100-W high fidelity audio amplifiers output stage. Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230

1.179. 2sc5548.pdf Size:230K _toshiba

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2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tr = 0.5 s (max), t = 0.3 s (max) (I = 0.8 A) f C High collector breakdown voltage: V = 370 V CEO High DC current gain: h = 60 (min) (I = 0.2 A) FE C Maximum Ratings (Ta =

1.180. 2sc5176.pdf Size:235K _toshiba

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1.181. 2sc5549.pdf Size:205K _toshiba

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1.182. 2sc5196.pdf Size:170K _toshiba

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1.183. 2sc5855.pdf Size:194K _toshiba

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2SC5855 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (max) High Speed : tf(2) = 0.1 s (typ.) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

1.184. 2sc5109.pdf Size:242K _toshiba

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2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature Tj

1.185. 2sc5261.pdf Size:182K _toshiba

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1.186. 2sc5261ft.pdf Size:103K _toshiba

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1.187. hn3c51f_071122.pdf Size:289K _toshiba

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HN3C51F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN3C51F Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = 120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltag

1.188. 2sc5906.pdf Size:165K _toshiba

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2SC5906 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol

1.189. 2sc5199.pdf Size:170K _toshiba

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1.190. 2sc5819.pdf Size:180K _toshiba

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2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) f Maximum Ratings (Ta = = 25C) = = Character

1.191. 2sc5084.pdf Size:474K _toshiba

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2SC5084 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.192. 2sc5886.pdf Size:123K _toshiba

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2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications Unit: mm DC-DC Converter Applications High DC current gain: h = 400 to 1000 (I = 0.5 A) FE C Low collector-emitter saturation: V = 0.22 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) f Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base vo

1.193. 2sc5316.pdf Size:125K _toshiba

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1.194. 2sc5257.pdf Size:126K _toshiba

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1.195. 2sc5562.pdf Size:128K _toshiba

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1.196. 2sc5087r_101223.pdf Size:100K _toshiba

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2SC5087R TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5087R VHF to UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base cu

1.197. 2sc5233.pdf Size:280K _toshiba

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2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-bas

1.198. 2sc5317.pdf Size:121K _toshiba

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2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-bas

1.199. 2sc5684.pdf Size:126K _toshiba

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1.200. 2sc5097.pdf Size:473K _toshiba

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2SC5097 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5097 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 10dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base cu

1.201. 2sc5143.pdf Size:191K _toshiba

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1.202. 2sc5322.pdf Size:121K _toshiba

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2SC5322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure: NF = 1.4dB (f = 2 GHz) High gain: Ga = 10dB (f = 2 GHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5 V Collec

1.203. 2sc5148.pdf Size:205K _toshiba

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1.204. 2sc5465.pdf Size:146K _toshiba

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2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEO Maximum Ratings (Ta = 25C) Characteristi

1.205. 2sc5421.pdf Size:322K _toshiba

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2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collector-Em

1.206. 2sc5232.pdf Size:270K _toshiba

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2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit: mm Switching and Muting Switch Application Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current: I = 500 mA (max) C Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-bas

1.207. 2sc5174.pdf Size:172K _toshiba

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1.208. 2sc5142.pdf Size:204K _toshiba

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1.209. 2sc5318.pdf Size:126K _toshiba

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1.210. 2sc5332.pdf Size:177K _toshiba

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1.211. 2sc5258.pdf Size:103K _toshiba

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1.212. 2sc5717.pdf Size:411K _toshiba

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2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Sy

1.213. 2sc5422.pdf Size:316K _toshiba

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2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collector

1.214. 2sc5404.pdf Size:319K _toshiba

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2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATING

1.215. 2sc5356.pdf Size:175K _toshiba

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2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications Excellent switching times: tf = 0.5 s (max) (I = 1.2 A) C High collectors breakdown voltage: V = 800 V CEO High DC current gain: h = 15 (min) (I = 0.15 A) FE C Maximum Ratings (Ta

1.216. 2sc5714.pdf Size:166K _toshiba

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2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) f Maximum Ratings (Ta = = 25

1.217. 2sc5354.pdf Size:129K _toshiba

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1.218. 2sc5107.pdf Size:241K _toshiba

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2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit: mm Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature Tj

1.219. 2sc5411.pdf Size:311K _toshiba

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2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATING

1.220. 2sc5320.pdf Size:123K _toshiba

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1.221. 2sc5317ft.pdf Size:125K _toshiba

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2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm (chip: fT = 16 GHz series) Low noise figure: NF = 1.3dB (f = 2 GHz) High gain: |S |2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V

1.222. 2sc5695.pdf Size:411K _toshiba

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2SC5695 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5695 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 1500 V Co

1.223. 2sc5262.pdf Size:126K _toshiba

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1.224. 2sc5095.pdf Size:295K _toshiba

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2SC5095 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5095 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V Base c

1.225. 2sc5065.pdf Size:466K _toshiba

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2SC5065 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5065 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base curr

1.226. ttc5200_en_datasheet_090713.pdf Size:190K _toshiba2

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TTC5200 TOSHIBA Transistor Silicon NPN Triple Diffused Type TTC5200 0 Power Amplifier Applications Unit: mm High collector voltage: VCEO = 230 V (min) Complementary to TTA1943 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emit

1.227. 2sc5858.pdf Size:199K _toshiba2

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2SC5858 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 HORIZONTAL DEFLECTION OUTPUT FOR Unit: mm HDTV, DIGITAL TV, PROJECTION TV High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 1.5 V (Max) High Speed : tf(2) = 0.1 μs (Typ.) ABSOLUTE MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1700 V Coll

1.228. 2sc5298.pdf Size:95K _sanyo

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Ordering number:EN5292 NPN Triple Diffused Planar Silicon Transistor 2SC5298 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5298] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper dio

1.229. 2sa2039_2sc5706.pdf Size:61K _sanyo

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Ordering number : ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High al

1.230. 2sc5347a.pdf Size:67K _sanyo

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Ordering number : ENA1087 2SC5347A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, 2SC5347A Low-Noise Medium Output Amplifier Applications Features High-frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). :?S21e?2=8dB typ (f=1GHz). : NF=1.8dB typ (f=1GHz). Specifications Absolute Maximum R

1.231. 2sc5696.pdf Size:29K _sanyo

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Ordering number : ENN6663B 2SC5696 NPN Triple Diffused Planar Silicon Transistor 2SC5696 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5696] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0

1.232. 2sc5665.pdf Size:36K _sanyo

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Ordering number : ENN7351 2SC5665 NPN Epitaxial Planar Silicon Transistor 2SC5665 High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=6.5GHz typ (VCE=1V). 2106A : fT=11.2GHz typ (VCE=3V). [2SC5665] Low operating voltage. 0.75 0.3 0.6 3 0~0.1 1 2 0.1 0.2 0.5 0.5 1.

1.233. 2sa2099_2sc5888.pdf Size:76K _sanyo

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Ordering number : EN7331A 2SA2099 / 2SC5888 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications

1.234. 2sc5611.pdf Size:41K _sanyo

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Ordering number:ENN6336 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2023/2SC5611 60V / 5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit:mm equipment. 2165 Inverters, converters (strobes, flash, fluorescent lamp [2SA2023/2SC5611] lighting circuit). 8.0 4.0 Power amplifier (high-power car stereo, motor

1.235. 2sc5414a.pdf Size:48K _sanyo

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Ordering number : ENA1081 2SC5414A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5414A Amplifier Applications Features High gain : ?S21e?2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V C

1.236. 2sc5707.pdf Size:37K _sanyo

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Ordering number : ENN6913 2SA2040/2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2045B [2SA2040 / 2SC5707] Features 6.5 2.3 5.0 0.5 Adoption of FBET, MBIT process. 4 Large current capacitance. Low coll

1.237. 2sc5680.pdf Size:28K _sanyo

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Ordering number : ENN6652A 2SC5680 NPN Triple Diffused Planar Silicon Transistor 2SC5680 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5680] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.

1.238. 2sc5276.pdf Size:136K _sanyo

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Ordering number:EN5186 NPN Epitaxial Planar Silicon Transistor 2SC5276 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2110A 2 High gain : ? S21e? =11dB typ (f=1.5GHz). [2SC5276] 1.9 High cutoff frequency : fT=11GHz typ. 0.95 0.95 Low-voltage, low-current operation 0.4

1.239. 2sc5778.pdf Size:30K _sanyo

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Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). Adoption of MBIT process. [2SC5778] On-chip damper diode. 5.6 3.4 16.0 3.

1.240. 2sc5899.pdf Size:29K _sanyo

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Ordering number : ENN7538 2SC5899 NPN Triple Diffused Planar Silicon Transistor 2SC5899 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1700V). 2174A High reliability(Adoption of HVP process). [2SC5899] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7

1.241. 2sc5980.pdf Size:38K _sanyo

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Ordering number : ENN8091 2SC5980 NPN Epitaxial Planar Silicon Transistor 2SC5980 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power

1.242. 2sc5046.pdf Size:112K _sanyo

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Ordering number:EN4784 NPN Triple Diffused Planar Silicon Transistor 2SC5046 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5046] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1

1.243. 2sc5450.pdf Size:40K _sanyo

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Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5450] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Bas

1.244. 2sc5610.pdf Size:51K _sanyo

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Ordering number:ENN6367 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2022/2SC5610 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2041A Features [2SA2022/2SC5610] 4.5 Adoption of MBIT processes. 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation voltage. High-speed sw

1.245. 2sc5791.pdf Size:31K _sanyo

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Ordering number : ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5791] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7

1.246. 2sc5304ls.pdf Size:43K _sanyo

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Ordering number:ENN5883A NPN Triple Diffused Planar Silicon Transistor 2SC5304LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5304] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55

1.247. 2sc5566.pdf Size:50K _sanyo

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Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2013/2SC5566] 4.5 Adoption of FBET and MBIT processes. 1.5 1.6 High current capacitance. Low collector-to-emitter saturation voltage. High-speed

1.248. 2sa2013_2sc5566.pdf Size:57K _sanyo

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Ordering number : ENN6307B 2SA2013 / 2SC5566 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2013 / 2SC5566 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales m

1.249. 2sc5690.pdf Size:28K _sanyo

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Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5690] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3

1.250. 2sc5502.pdf Size:48K _sanyo

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Ordering number:ENN6279 NPN Epitaxial Planar Silicon Transistor 2SC5502 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2161 High cutoff frequency : fT=8GHz typ. [2SC5502] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector 3 :

1.251. 2sc5565.pdf Size:49K _sanyo

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Ordering number:ENN6306 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2012/2SC5565 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2012/2SC5565] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. Ultrasmall-sized pa

1.252. 2sc5537.pdf Size:32K _sanyo

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Ordering number:ENN6340 NPN Epitaxial Planar Silicon Transistor 2SC5537 Low-Voltage, Low-Current High-frequency Amplifier Applications Features Package Dimensions Low voltage, low current operation : fT=5GHz typ. unit:mm 2 (VCE=1V, IC=1mA) : ? S21e? =7dB typ (f=1GHz). 2159 : NF=2.6dB typ (f=1GHz). [2SC5537] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1

1.253. 2sc5578.pdf Size:40K _sanyo

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Ordering number:ENN6297 NPN Triple Diffused Planar Silicon Transistor 2SC5578 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5578] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3

1.254. 2sc5045.pdf Size:108K _sanyo

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Ordering number:EN4783 NPN Triple Diffused Planar Silicon Transistor 2SC5045 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5045] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.

1.255. 2sc5041.pdf Size:101K _sanyo

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Ordering number:EN4779 NPN Triple Diffused Planar Silicon Transistor 2SC5041 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5041] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8

1.256. 2sc5296.pdf Size:99K _sanyo

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Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5296] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper d

1.257. 2sc5305.pdf Size:34K _sanyo

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Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5305] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1:Base 1 2 3 2:Collector 3:Emitter 2.55 2.55 SANYO:TO-220FI (LS)

1.258. 2sc5699.pdf Size:28K _sanyo

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Ordering number : ENN6665A 2SC5699 NPN Triple Diffused Planar Silicon Transistor 2SC5699 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5699] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 : Base 2 :

1.259. 2sc5265ls.pdf Size:31K _sanyo

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Ordering number : ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit : mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Base 2 : Collector 3 : Emitt

1.260. 2sc5775.pdf Size:29K _sanyo

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Ordering number : ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2.0 1.6

1.261. 2sc5808.pdf Size:30K _sanyo

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Ordering number : ENN7079 2SC5808 NPN Triple Diffused Planar Silicon Transistor 2SC5808 Switching Power Supply Applications Features Package Dimensions High breakdown voltage. unit : mm High speed switching. 2045B Wide ASO. [2SC5808] Adoption of MBIT process. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Base 2 : Collector 1 2 3 3 : Emitter 4 : Collector SANYO : T

1.262. 2sc5415.pdf Size:47K _sanyo

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Ordering number:ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =9dB typ (f=1GHz). unit:mm High cutoff frequency : fT=6.7GHz typ. 2038A [2SC5415] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO : PCP Specifications (Bottom vie

1.263. 2sc5226.pdf Size:112K _sanyo

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Ordering number:EN5032A NPN Epitaxial Planar Silicon Transistor 2SC5226 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2059B High cutoff frequency : fT=7GHz typ. [2SC5226] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 :

1.264. 2sc5304.pdf Size:36K _sanyo

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Ordering number:EN5883 NPN Triple Diffused Planar Silicon Transistor 2SC5304 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5304] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1:Base 1 2 3 2:Collector 3:Emitter 2.55 2.55 SANYO:TO-220FI (LS)

1.265. 2sc5155.pdf Size:115K _sanyo

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Ordering number:EN4802 NPN Epitaxial Planar Silicon Transistor 2SC5155 Low-Frequency General-Purpose Amplifier, Applications Applications Package Dimensions Various drivers. unit:mm 2045B Features [2SC5155] 6.5 High current capacity. 2.3 5.0 0.5 4 Adoption of MBIT process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. 0.85 0.7 1

1.266. 2sc5227.pdf Size:127K _sanyo

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Ordering number:EN5034 NPN Epitaxial Planar Silicon Transistor 2SC5227 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2018B High cutoff frequency : fT=7GHz typ. [2SC5227] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector

1.267. 2sc5534.pdf Size:44K _sanyo

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Ordering number:ENN6258 NPN Epitaxial Planar Silicon Transistor 2SC5534 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=2GHz). unit:mm 2 High gain : ? S21e? =10dB typ (f=2GHz). 2161 High cutoff frequency : fT=13GHz typ. [2SC5534] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector

1.268. 2sc5303.pdf Size:40K _sanyo

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Ordering number:ENN6177 NPN Triple Diffused Planar Silicon Transistor 2SC5303 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5303] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6

1.269. 2sc5444.pdf Size:42K _sanyo

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Ordering number:EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5444] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1

1.270. 2sc5301.pdf Size:96K _sanyo

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Ordering number:EN5417A NPN Triple Diffused Planar Silicon Transistor 2SC5301 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5301] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6

1.271. 2sc5416ls.pdf Size:43K _sanyo

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Ordering number:ENN5696A NPN Triple Diffused Planar Silicon Transistor 2SC5416LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5416] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220

1.272. 2sc5302.pdf Size:89K _sanyo

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Ordering number:EN5363B NPN Triple Diffused Planar Silicon Transistor 2SC5302 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC5302] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1

1.273. 2sc5567.pdf Size:49K _sanyo

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Ordering number:ENN6321 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2014/2SC5567 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2014/2SC5567] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

1.274. 2sc5681.pdf Size:28K _sanyo

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Ordering number : ENN6607A 2SC5681 NPN Triple Diffused Planar Silicon Transistor 2SC5681 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5681] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7

1.275. 2sc5888.pdf Size:42K _sanyo

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Ordering number : ENN7331 2SA2099 / 2SC5888 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2099 / 2SC5888 High-Current Switching Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features [2SA2099 / 2SC5888] Adoption of MBIT processes. 4.5 10.0 2.8 Large current capacitance. 3.2 Low collector-to-emitter saturation

1.276. 2sc5417ls.pdf Size:43K _sanyo

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Ordering number:ENN5817A NPN Triple Diffused Planar Silicon Transistor 2SC5417LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5417] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1:Base 2:Collector 3:Emitter Specifications 2.55 2.55 SANYO:TO-220F

1.277. 2sc5047.pdf Size:108K _sanyo

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Ordering number:EN4785A NPN Triple Diffused Planar Silicon Transistor 2SC5047 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (Adoption of HVP process). 2048B High breakdown voltage (VCBO=1600V). [2SC5047] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2

1.278. 2sc5639.pdf Size:42K _sanyo

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Ordering number:ENN6467 NPN Triple Diffused Planar Silicon Transistor 2SC5639 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5639] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

1.279. 2sc5638.pdf Size:42K _sanyo

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Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5638] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

1.280. 2sc5488.pdf Size:34K _sanyo

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Ordering number:ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2159 High cutoff frequency : fT=7GHz typ. [2SC5488] Ultrasmall, slim flat-lead package. (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2

1.281. 2sc5683.pdf Size:28K _sanyo

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Ordering number : ENN6653A 2SC5683 NPN Triple Diffused Planar Silicon Transistor 2SC5683 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5683] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.

1.282. 2sc5415a.pdf Size:92K _sanyo

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Ordering number : ENA1080 2SC5415A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5415A Amplifier Applications Features High gain : ?S21e?2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Col

1.283. 2sc5551a.pdf Size:287K _sanyo

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Ordering number : ENA1118 2SC5551A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output 2SC5551A Amplifier Applications Features High fT : (fT=3.5GHz typ). Large current : (IC=300mA). Large allowable collector dissipation (1.3W max). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collec

1.284. 2sc5646a.pdf Size:55K _sanyo

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Ordering number : ENA1120 2SC5646A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier, 2SC5646A OSC Applications Features Low-noise : NF=1.5dB typ (f=2GHz). High cut-off frequency : fT=10GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). Low-voltage operation. High gain : ?S21e?2=9.5dB typ (f=2GHz). Ultrasmall, slim flat-lead

1.285. 2sc5227a.pdf Size:75K _sanyo

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Ordering number : ENA1063 2SC5227A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5227A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Uni

1.286. 2sc5229.pdf Size:134K _sanyo

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Ordering number:EN5045 NPN Epitaxial Planar Silicon Transistor 2SC5229 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =10.5dB typ (f=1GHz). 2038A High cutoff frequency : fT=6.5GHz typ. [2SC5229] Medium power operation : NF=1.7dB typ (f=1GHz). 4.5 2 1.5 (VCE=8V, IC=40mA)

1.287. 2sc5452.pdf Size:42K _sanyo

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Ordering number:EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5452] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Ba

1.288. 2sc5764.pdf Size:31K _sanyo

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Ordering number : ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching. [2SC5764] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Base 2.55 2.55 2 : Collector 3 : Emitter

1.289. 2sc5682.pdf Size:28K _sanyo

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Ordering number : ENN6608A 2SC5682 NPN Triple Diffused Planar Silicon Transistor 2SC5682 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5682] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7

1.290. 2sc5265.pdf Size:112K _sanyo

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Ordering number:EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANY

1.291. 2sc5275.pdf Size:136K _sanyo

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Ordering number:EN5185 NPN Epitaxial Planar Silicon Transistor 2SC5275 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2018B 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5275] High cutoff frequency : fT=11GHz typ. 0.4 Low-voltage, low-current operation 0.16 3 (VCE=

1.292. 2sc5245a.pdf Size:270K _sanyo

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Ordering number : ENA1074 2SC5245A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5245A OSC Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5G

1.293. 2sc5300.pdf Size:98K _sanyo

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Ordering number:EN5416A NPN Triple Diffused Planar Silicon Transistor 2SC5300 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5300] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0

1.294. 2sc5417.pdf Size:45K _sanyo

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Ordering number : EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit: mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5417] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter SANYO : TO220FI (LS) 2.5

1.295. 2sc5689.pdf Size:29K _sanyo

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Ordering number : ENN6654A 2SC5689 NPN Triple Diffused Planar Silicon Transistor 2SC5689 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5689] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3.

1.296. 2sc5831.pdf Size:32K _sanyo

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Ordering number : ENN7261 2SC5831 NPN Epitaxial Planar Silicon Transistor 2SC5831 Driver Applications Preliminary Applications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B [2SC5831] 8.0 4.0 Features 3.3 1.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 6510V between

1.297. 2sc5264.pdf Size:463K _sanyo

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Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 SANYO : TO-220

1.298. 2sc5645.pdf Size:32K _sanyo

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Ordering number : ENN6588 2SC5645 NPN Epitaxial Planar Silicon Transistor 2SC5645 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cutoff frequency : fT=10GHz typ (VCE=1V). 2106A : fT=12.5GHz typ (VCE=3V). [2SC5645] Low-voltage operating . High gain :?S21e?2=9.5dB typ (f=2GHz). 0.75 0.3 0.6 3

1.299. 2sc5238.pdf Size:104K _sanyo

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Ordering number:EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5238] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.2 0.6

1.300. 2sc536n.pdf Size:40K _sanyo

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Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit:mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 : Emitter 2.5

1.301. 2sc5042.pdf Size:101K _sanyo

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Ordering number:EN4780 NPN Triple Diffused Planar Silicon Transistor 2SC5042 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5042] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 :

1.302. 2sc5228.pdf Size:128K _sanyo

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Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13.5dB typ (f=1GHz). 2110A High cutoff frequency : fT=7GHz typ. [2SC5228] 1.9 0.95 0.95 0.4 0.16 4 3 0 to 0.1 2 1 0.6 0.95 0.85 1 : Emitter 2.9 2 :

1.303. 2sc5536a.pdf Size:51K _sanyo

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Ordering number : ENA1092 2SC5536A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF Low-Noise Amplifier, 2SC5536A OSC Applications Features Low-noise : NF=1.8dB typ (f=150MHz). High gain : ?S21e?2=16dB typ (f=150MHz). Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C P

1.304. 2sa2016_2sc5569.pdf Size:57K _sanyo

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Ordering number : ENN6309B 2SA2016 / 2SC5569 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2016 / 2SC5569 DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitales m

1.305. 2sc5551.pdf Size:43K _sanyo

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Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions High fT : (fT=3.5GHz typ). unit:mm Large current : (IC=300mA). 2038A Large allowable collector dissipation (1.3W max). [2SC5551] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75 2 : Collector 3 : Emitter SANYO :

1.306. 2sc5568.pdf Size:49K _sanyo

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Ordering number:ENN6308 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2015/2SC5568 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2015/2SC5568] 4.5 Adoption of MBIT processes. 1.6 1.5 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.

1.307. 2sc5577.pdf Size:40K _sanyo

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Ordering number:ENN6281 NPN Triple Diffused Planar Silicon Transistor 2SC5577 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5577] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2

1.308. 2sc5994.pdf Size:254K _sanyo

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Ordering number : ENN8035 2SC5994 NPN Epitaxial Planar Silicon Transistor 2SC5994 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25

1.309. 2sc5231.pdf Size:132K _sanyo

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Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2106A High cutoff frequency : fT=7GHz typ. [2SC5231] Very small-sized package permiting 2SC5231- 0.75 0.3 0.6 applied sets to be mad

1.310. 2sc5490a.pdf Size:47K _sanyo

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Ordering number : ENA1091 2SC5490A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5490A Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5GHz typ. : ?S21e?2=5.5dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). H

1.311. 2sc5451.pdf Size:40K _sanyo

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Ordering number:EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5451] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Bas

1.312. 2sc5347.pdf Size:114K _sanyo

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Ordering number:EN5512A NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features Package Dimensions High frequency medium output amplification unit:mm (VCE=5V, IC=50mA) 2038A : fT=4.7GHz typ (f=1GHz). [2SC5347] 2 : ? S21e? =8dB typ (f=1GHz). 4.5 : NF=1.8dB typ (f=1GHz). 1.5 1.6 0.4 0.5 3 2

1.313. 2sc5277a.pdf Size:58K _sanyo

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Ordering number : ENA1075 2SC5277A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5277A OSC Applications Features Low-noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). High gain : ?S21e?2=10dB typ (f=1.5GHz). High cut-off frequency : fT=8GHz typ. Low-voltage, low-current operation (VCE=1V, IC=1mA). : fT=3.5G

1.314. 2sc5539.pdf Size:44K _sanyo

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Ordering number:ENN6341 NPN Epitaxial Planar Silicon Transistor 2SC5539 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.1dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =12dB typ (f=1GHz). 2159 High cutoff frequency : fT=7.5GHz typ. [2SC5539] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1

1.315. 2sc5277.pdf Size:134K _sanyo

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Ordering number:EN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2106A 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5277] High cutoff frequency : fT=11GHz typ. 0.75 0.3 0.6 Low-voltage, low-current operation (VC

1.316. 2sc5299.pdf Size:94K _sanyo

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Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5299] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.

1.317. 2sc5231a.pdf Size:279K _sanyo

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Ordering number : ENA1077 2SC5231A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5231A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim. Specification

1.318. 2sc5506.pdf Size:41K _sanyo

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Ordering number:EN6070 NPN Triple Diffused Planar Silicon Transistor 2SC5506 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5506] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3

1.319. 2sc5043.pdf Size:106K _sanyo

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Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5043] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8

1.320. 2sc5476.pdf Size:40K _sanyo

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Ordering number:EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener diode of

1.321. 2sc5706.pdf Size:40K _sanyo

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Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4 Low collec

1.322. 2sc5226a.pdf Size:75K _sanyo

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Ordering number : ENA1062 2SC5226A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5226A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Uni

1.323. 2sc5230.pdf Size:128K _sanyo

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Ordering number:EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =10.5dB typ (f=1GHz). 2004B High cutoff frequency : fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Base 2 : Emitter 3 : Collector 1 2 3

1.324. 2sc5569.pdf Size:50K _sanyo

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Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2163 Features [2SA2016/2SC5569] 4.5 Adoption of FBET and MBIT processes. 1.6 1.5 High current capacitance. Low collector-to-emitter saturation voltage. High-speed s

1.325. 2sc5453.pdf Size:41K _sanyo

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Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit:mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5453] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Base 1 2 3

1.326. 2sc5710.pdf Size:37K _sanyo

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Ordering number : ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2044 / 2SC5710] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector-to-emitte

1.327. 2sa2040_2sc5707.pdf Size:58K _sanyo

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Ordering number : ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High al

1.328. 2sc5375.pdf Size:122K _sanyo

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Ordering number:EN5541A NPN Epitaxial Planar Silicon Transistor 2SC5375 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2059B [2SC5375] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Base 2 : Emitter 3 : Collector SANYO : MCP Specifi

1.329. 2sc5536.pdf Size:35K _sanyo

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Ordering number:ENN6290 NPN Epitaxial Planar Silicon Transistor 2SC5536 VHF Low-Noise Amplifier , OSC Applications Features Package Dimensions Low noise : NF=1.8dB typ (f=150MHz). unit:mm 2 High gain : ? S21e? =16dB typ (f=150MHz). 2159 Ultrasmall, slim flat-lead package. [2SC5536] (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3 : Collector

1.330. 2sc5647.pdf Size:36K _sanyo

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Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). [2SC5647] Low operating voltage. 0.75 High gain : ?S21e?2=10.5dB typ (f=2GHz). 0.3 0.6

1.331. 2sc5501a.pdf Size:264K _sanyo

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Ordering number : ENA1061 2SC5501A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5501A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=13dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Large allowable collector dissipation : PC=500mW max. Specifications Absolute Maximum Ra

1.332. 2sc5489.pdf Size:31K _sanyo

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Ordering number:ENN6339 NPN Epitaxial Planar Silicon Transistor 2SC5489 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2159 High cutoff frequency : fT=9.0GHz typ. [2SC5489] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1

1.333. 2sc5540.pdf Size:30K _sanyo

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Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions High cutoff frequency : fT=10GHz typ. unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2159 Low noise : NF=1.3dB typ (f=1GHz). [2SC5540] Small Cob : Cob=0.4pF typ. Ultrasmall, slim flat-lead package. 1.4 (1.4mm ?

1.334. 2sc5420.pdf Size:69K _sanyo

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Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2069B Adoption of MBIT process. [2SC5420] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 : Base 2 : Collector 3 : Emitter SANYO : SMP-FD

1.335. 2sc5564.pdf Size:50K _sanyo

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Ordering number:ENN6305 PNP/NPN Epitaxial Planar Silicon Transistors 2SA2011/2SC5564 DC/DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit:mm 2038A Features [2SA2011/2SC5564] 4.5 Adoption of MBIT processes. 1.5 1.6 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

1.336. 2sc5501.pdf Size:46K _sanyo

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Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.0dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =13dB typ (f=1GHz). 2161 High cutoff frequency : fT=7GHz typ. [2SC5501] Large allowable collector dissipation : PC=500mW max. 0.65 0.65 0.15 0.3 4 3 0

1.337. 2sc5044.pdf Size:105K _sanyo

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Ordering number:EN4782A NPN Triple Diffused Planar Silicon Transistor 2SC5044 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High reliability (HVP process). 2039D High breakdown voltage (VCBO=1600V). [2SC5044] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 :

1.338. 2sc5709.pdf Size:37K _sanyo

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Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector-to-emitter

1.339. 2sc5777.pdf Size:29K _sanyo

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Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5777] Adoption of MBIT process. 5.6 3.4 On-chip damper diode. 16.0 3

1.340. 2sc5388.pdf Size:41K _sanyo

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Ordering number:ENN6283 NPN Triple Diffused Planar Silicon Transistor 2SC5388 High-Voltage Switching Applications Features Package Dimensions High speed (Adoption of MBIT process). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC5388] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2 : Co

1.341. 2sc5305ls.pdf Size:42K _sanyo

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Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5305] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1:Base 1 2 3 2:Collector 3:Emitter Specifications 2.55 2.55

1.342. 2sc5538.pdf Size:36K _sanyo

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Ordering number:ENN6291 NPN Epitaxial Planar Silicon Transistor 2SC5538 VHF to UHF OSC, High-Frequency Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =10.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2159 Ultrasmall, slim flat-lead package. [2SC5538] (1.4mm? 0.8mm? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45 0.2 1 : Base 2 : Emitter 3

1.343. 2sa2125_2sc5964.pdf Size:59K _sanyo

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Ordering number : ENN7988 2SA2125 / 2SC5964 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2125 / 2SC5964 DC / DC Converter Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA212

1.344. 2sc5637.pdf Size:42K _sanyo

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Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2174 High reliability (Adoption of HVP process). [2SC5637] Adoption of MBIT process. 3.4 5.6 16.0 3.1 2.8 2.0 2.1 0.7

1.345. 2sc5443.pdf Size:42K _sanyo

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Ordering number:EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1

1.346. 2sc5792.pdf Size:29K _sanyo

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Ordering number : ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5792] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7

1.347. 2sc5488a.pdf Size:57K _sanyo

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Ordering number : ENA1089 2SC5488A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5488A Amplifier Applications Features Low-noise : NF=1.0dB typ (f=1GHz). High gain : ?S21e?2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm?0.8mm?0.6mm). Halogen free compliance. Speci

1.348. 2sc5607.pdf Size:30K _sanyo

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Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features [2SC5607] Adoption of MBIT processes. 2.2 4.0 Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. 0.4 High

1.349. 2sc5374.pdf Size:122K _sanyo

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Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions 2 High gain : ? S21e? =10.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=5.2GHz typ. 2106A [2SC5374] 0.75 0.3 0.6 0 to 0.1 0.2 0.1 0.5 0.5 1.6 1 : Base 2 : Emitter 3 : Collector SANYO : SMCP Specification

1.350. 2sc5069.pdf Size:106K _sanyo

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Ordering number:EN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit:mm Adoption of MBIT process. 2038A High DC current gain. [2SC5069] Low collector-to-emitter saturation voltage. 4.5 High VEBO. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Base 0.75

1.351. 2sc5763.pdf Size:30K _sanyo

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Ordering number : ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching. [2SC5763] Wide ASO. 10.2 4.5 Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 : Base 2 : Collector 1 2 3 3 : Emitter SANYO : TO-220 S

1.352. 2sc5297.pdf Size:100K _sanyo

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Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed : tf=100ns typ. unit:mm High breakdown voltage : VCBO=1500V. 2039D High reliability (Adoption of HVP process). [2SC5297] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1

1.353. 2sc5264ls.pdf Size:42K _sanyo

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Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit:mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 : Base 1 2 3 2 : Collector 3 : Emitter 2.55 2.55 Specifica

1.354. 2sc5503.pdf Size:45K _sanyo

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Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=1GHz). unit:mm 2 High gain : ? S21e? =15dB typ (f=1GHz). 2161 High cutoff frequency : fT=9.0GHz typ. [2SC5503] 0.65 0.65 0.15 0.3 4 3 0 to 0.1 1 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collec

1.355. 2sc5490.pdf Size:39K _sanyo

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Ordering number:ENN6289 NPN Epitaxial Planar Silicon Transistor 2SC5490 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2159 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5490] High cutoff frequency : fT=11GHz typ. Ultrasmall, slim flat-lead package. 1.4 (1.4mm? 0.8mm? 0.6

1.356. 2sc5776.pdf Size:29K _sanyo

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Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5776] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode.

1.357. 2sc5698.pdf Size:29K _sanyo

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Ordering number : ENN6664A 2SC5698 NPN Triple Diffused Planar Silicon Transistor 2SC5698 CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit : mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SC5698] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.0 2.1 0.9 0.

1.358. 2sc5070.pdf Size:106K _sanyo

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Ordering number:EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions High current capacity. unit:mm Adoption of MBIT process. 2084A High DC current gain. [2SC5070] Low collector-to-emitter saturation voltage. 4.5 1.9 2.6 10.5 High VEBO. 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 :

1.359. 2sc5669.pdf Size:33K _sanyo

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Ordering number : ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0 2.0 1.6

1.360. 2sc5694.pdf Size:37K _sanyo

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Ordering number : ENN6587 2SA2037 / 2SC5694 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2037 / 2SC5694 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers and unit : mm printer drivers. 2042B 8.0 [2SA2037 / 2SC5694] 4.0 3.3 1.0 1.0 Features Adoption of MBIT process. Large current capacity. 3.0 Low collector-to-

1.361. 2sc5291.pdf Size:27K _sanyo

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Ordering number : ENN5282A 2SC5291 NPN Epitaxial Planar Silicon Transistor 2SC5291 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit : mm Large current capacity. 2084B Can be provided in taping. [2SC5291] 9.5mm onboard mounting height. 4.5 1.9 2.6 10.5 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Emitter 2 : Collector 3 : Base

1.362. 2sc5245.pdf Size:155K _sanyo

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Ordering number:EN5184A NPN Epitaxial Planar Silicon Transistor 2SC5245 UHF to S-Band Low-Noise Amplifier, OSC Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2059B 2 High gain : ? S21e? =10dB typ (f=1.5GHz). [2SC5245] High cutoff frequency : fT=11GHz typ. 0.3 Low-voltage, low-current operation 0.15 3 (VCE

1.363. 2sc5541.pdf Size:44K _sanyo

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Ordering number:ENN6337 NPN Epitaxial Planar Silicon Transistor 2SC5541 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=1.2dB typ (f=2GHz). unit:mm 2 High gain : ? S21e? =10dB typ (f=2GHz). 2159 High cutoff frequency : fT=13GHz typ. [2SC5541] Ultrasmall, slim flat-lead package. (1.4mm ? 0.8mm ? 0.6mm) 1.4 0.1 0.25 3 1 2 0.45

1.364. 2sc5310.pdf Size:44K _sanyo

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Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16 3 pro

1.365. 2sa608n_2sc536n.pdf Size:36K _sanyo

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Ordering number : ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit : mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 2 3 1.

1.366. 2sc5646.pdf Size:31K _sanyo

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Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier and OSC Applications Features Package Dimensions Low-noise use : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V). 2159 : fT=12.5GHz typ (VCE=3V). [2SC5646] Low operating voltage. High gain :?S21e?2=9.5dB typ (f=2GHz). 1.4 Ultram

1.367. 2sc5774.pdf Size:29K _sanyo

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Ordering number : ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0 2.0 1.6

1.368. 2sc5999.pdf Size:37K _sanyo

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Ordering number : ENN8029 2SC5999 NPN Epitaxial Planar Silicon Transistors 2SC5999 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers, inverters. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Surface mount type. Specifications Absolute Maximum Ratings

1.369. 2sc5374a.pdf Size:56K _sanyo

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Ordering number : ENA1090 2SC5374A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, 2SC5374A High-Frequency Amplifier Applications Features High gain : ?S21e?2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage

1.370. 2sc5414.pdf Size:47K _sanyo

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Ordering number:ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain : ? S21e? =9.5dB typ (f=1GHz). unit:mm High cutoff frequency : fT=6.7GHz typ. 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Base 1 2 3 2 : Emitter 3 : Collector 1.3 1.3 SANYO : NP Specifications Absolute

1.371. 2sc5793.pdf Size:51K _sanyo

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注文コード No. N7451 2SC5793 N7451 No. 31504 新 NPN 三重拡散プレーナ形シリコントランジスタ 超高精細度 CRT ディスプレイ 2SC5793 水平偏向出力用 特長 ・高速度である。 ・高耐圧である 。 (VCBO=1600V) ・高信頼性である プロセス採用) (HVP 。 ・MBIT プロセス採用。 絶対最大定格 Absolute Maximum

1.372. 2sc5416.pdf Size:45K _sanyo

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Ordering number : EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit: mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5416] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 : Base 1 2 3 2 : Collector 3 : Emitter SANYO : TO220FI (LS) 2.5

1.373. 2sc5504.pdf Size:48K _sanyo

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Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions Low noise : NF=0.9dB typ (f=1GHz). unit:mm : NF=1.4dB typ (f=1.5GHz). 2161 2 High gain : ? S21e? =11dB typ (f=1GHz). [2SC5504] High cutoff frequency : fT=11GHz typ. Low voltage, low current operation. 0.65 0.65 (VCE=1V, IC=1m

1.374. 2sc5624.pdf Size:105K _renesas

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2SC5624 Silicon NPN Epitaxial High Frequency Low Noise Amplifier REJ03G0129-0200Z (Previous ADE-208-978(Z)) Rev.2.00 Oct.21.2003 Features High gain bandwidth product fT = 28 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is VH-. Rev.2.00, O

1.375. 2sc5593.pdf Size:63K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.376. 2sc5890.pdf Size:169K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.377. 2sc5998.pdf Size:104K _renesas

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2SC5998 Silicon NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0169-0100Z Rev.1.00 Apr.20.2004 Features High Transition Frequency fT = 11 GHz typ. High gain and Excellent Efficiency Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz High Collector to Emitter Voltage VCE

1.378. 2sc5828.pdf Size:116K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.379. 2sc5623.pdf Size:63K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.380. 2sc5945.pdf Size:276K _renesas

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2SC5945 Si NPN Epitaxial High Frequency Medium Power Amplifier REJ03G0443-0300 Rev.3.00 Aug 03, 2006 Features Excellent Linearity P1dB at output = +26 dBm typ. f = 2.4 GHz High Collector to Emitter Voltage VCEO = 5 V Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. 7 Pin, Lead less, Small mounting area (HWSON-6: 2.0 x 2.0 x 0.8 mm). Out

1.381. 2sc5022.pdf Size:41K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.382. 2sc5758.pdf Size:123K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.383. rej03g1921_rjk03c5dpads.pdf Size:80K _renesas

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Preliminary Datasheet RJK03C5DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1921-0200 Power Switching Rev.2.00 Apr 27, 2010 Features ? High speed switching ? Capable of 4.5 V gate drive ? Low drive current ? High density mounting ? Low on-resistance RDS(on) = 2.4 m? typ. (at VGS = 10 V) ? Pb-free ? Halogen-free Outline RENESAS Package code: PW

1.384. 2sc5850.pdf Size:85K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.385. 2sc5820.pdf Size:140K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.386. 2sc5894.pdf Size:129K _renesas

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.387. ksc5027.pdf Size:53K _fairchild_semi

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KSC5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Current (Puls

1.388. ksc5019.pdf Size:38K _fairchild_semi

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KSC5019 Low Saturation VCE(sat)=0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 2 A ICP

1.389. 2sc5200_fjl4315.pdf Size:476K _fairchild_semi

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January 2009 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A. TO-264 1 High Power Dissipation : 150watts. High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity

1.390. ksc5502d.pdf Size:137K _fairchild_semi

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KSC5502D/KSC5502DT D-PAK Equivalent Circuit High Voltage Power Switch Switching C Application 1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum R

1.391. ksc5603d.pdf Size:109K _fairchild_semi

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February 2010 KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode B Suitable for Electronic Ballast Application TO-220 1 Small Variance in Storage Time 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings TA = 25C unless otherwi

1.392. ksc5086_.pdf Size:64K _fairchild_semi

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KSC5086 HIgh Definition Color Display Horizontal Equivalent Circuit Deflection Output C (Damper Diode Built In) High Collector-Base Voltage : BVCBO=1500V High Speed Switching : tF=0.1s (Typ.) B TO-3PF 1 50? typ. 1.Base 2.Collector 3.Emitter E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VC

1.393. ksc5030f.pdf Size:142K _fairchild_semi

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KSC5030F High Voltage Fast Switching Transistor Features Fast Speed Switching Wide Safe Operating Area TO-3PF 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 6 A ICP * Collector Current (Pulse) 20 A PC Collector Diss

1.394. bc516.pdf Size:25K _fairchild_semi

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BC516 PNP Darlington Transistor This device is designed for applications reguiring extremely high current gain at currents to 1mA. Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V I

1.395. ksc5042f.pdf Size:56K _fairchild_semi

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KSC5042F High Voltage Switchihg Dynamic Focus Application High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability TO-220F 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1500 V VCEO C

1.396. ksc5502.pdf Size:226K _fairchild_semi

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April 2008 KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application Small Variance in Storage Time Equivalent Circuit Wide Safe Operating Area C Suitable for Electronic Ballast Application B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TC=25C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 1200

1.397. ksc5026m.pdf Size:120K _fairchild_semi

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January 2011 KSC5026M NPN Silicon Transistor Features High Voltage and High Reliability High Speed Switching Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 1.5 A

1.398. ksc5024.pdf Size:58K _fairchild_semi

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KSC5024 High Voltage and High Reliabilty High Speed Switching Wide SOA TO-3P 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter- Base Voltage 7 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 2

1.399. fdmc510p.pdf Size:307K _fairchild_semi

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June 2010 FDMC510P P-Channel PowerTrench MOSFET -20 V, -18 A, 8.0 m? Features General Description Max rDS(on) = 8.0 m? at VGS = -4.5 V, ID = -12 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 9.8 m? at VGS = -2.5 V, ID = -10 A been optimized for rDS(ON), switching performance and Max rDS(on) = 13 m? at VGS

1.400. ksc5039f.pdf Size:58K _fairchild_semi

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KSC5039F High Voltage Power Switch Switching Application TO-220F 1 1.Base 2.Collector 3.Emitter NPN Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A I

1.401. ksc5386.pdf Size:764K _fairchild_semi

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KSC5386 High Voltage Color Display Horizontal Equivalent Circuit C Deflection Output (Damper Diode Built In) High Collector-Base Breakdown Voltage : BVCBO=1500V B TO-3PF High Speed Switching : tF=0.1s (Typ) 1 Wide S.O.A 50? typ. 1.Base 2.Collector 3.Emitter For C-Monitor (48KHz) E NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings unless otherwise not

1.402. bc556_bc557_bc558_bc559_bc560.pdf Size:43K _fairchild_semi

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BC556/557/558/559/560 Switching and Amplifier High Voltage: BC556, VCEO= -65V Low Noise: BC559, BC560 Complement to BC546 ... BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 -80 V : BC557/560 -50 V : BC558/559 -30 V VCEO Col

1.403. ksc5338d.pdf Size:388K _fairchild_semi

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May 2010 KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Collector 3.Emitter

1.404. bc547_bc547a_bc547b_bc547c.pdf Size:26K _fairchild_semi

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Discrete POWER & Signal Technologies BC547 BC547A BC547B BC547C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emit

1.405. 2sc5242_fja4313.pdf Size:468K _fairchild_semi

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January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = 17A TO-3P 1 High Power Dissipation : 130watts 1.Base 2.Collector 3.Emitter High Frequency : 30MHz. High Voltage : VCEO=250V Wide S.O.A for reliable operation. Excellent Gain Linearity f

1.406. fdc5661n_f085.pdf Size:419K _fairchild_semi

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October 2008 FDC5661N_F085 tm N-Channel Logic Level PowerTrench MOSFET 60V, 4A, 60m? Applications Features RDS(on) = 47m? at VGS = 10V, ID = 4.3A DC/DC converter RDS(on) = 60m? at VGS = 4.5V, ID = 4A Motor Drives Typ Qg(TOT) = 14.5nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDC566

1.407. ksc5305d.pdf Size:243K _fairchild_semi

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May 2010 KSC5305D NPN Silicon Transistor Features High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement Equivalent Circuit

1.408. ksc5039.pdf Size:54K _fairchild_semi

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KSC5039 High Voltage Power Switch Switching Application TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 5 A ICP Collector Current (Pulse) 10 A IB Base Curr

1.409. ksc5402dt.pdf Size:220K _fairchild_semi

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December 2009 KSC5402D/KSC5402DT NPN Silicon Transistor, Planar Silicon Transistor Features D-PAK High Voltage High Speed Power Switch Application Equivalent Circuit Wide Safe Operating Area C 1 Built-in Free Wheeling Diode TO-220 Suitable for Electronic Ballast Application B Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 1 E 1.Base 2.Collector 3.

1.410. ksc5021.pdf Size:302K _fairchild_semi

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October 2008 KSC5021 NPN Silicon Transistor High Voltage and High Reliability High Speed Switching : tF = 0.1ms (Typ.) Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value Units 800 V VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 7 V VEBO Emitter-Base Voltage 5 A IC Collector C

1.411. fdc5614p.pdf Size:140K _fairchild_semi

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February 2002 FDC5614P ? ? ? 60V P-Channel Logic Level PowerTrench? MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchilds high 3 A, 60 V. RDS(ON) = 0.105 ? @ VGS = 10 V voltage PowerTrench process. It has been optimized for RDS(ON) = 0.135 ? @ VGS = 4.5 V power management applications. Fast switching speed Applications High performance t

1.412. bc548_bc548a_bc548b_bc548c.pdf Size:21K _fairchild_semi

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Discrete POWER & Signal Technologies BC548 BC548A BC548B BC548C E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emit

1.413. bc517.pdf Size:27K _fairchild_semi

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January 2005 BC517 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Bas

1.414. fdc5612.pdf Size:78K _fairchild_semi

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December 2004 FDC5612 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.3 A, 60 V. RDS(ON) = 0.055 ? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 0.064 ? @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Low gate charge (12.5nC typical). These MOSFETs fe

1.415. fjaf6810a-j6810a-2sc5936.pdf Size:186K _fairchild_semi

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FJAF6810A High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1550V • High Switching Speed : tF(typ.) =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Rating Units VCBO Collect

1.416. bc546_bc547_bc548_bc549_bc550.pdf Size:44K _fairchild_semi

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BC546/547/548/549/550 Switching and Applications High Voltage: BC546, VCEO=65V Low Noise: BC549, BC550 Complement to BC556 ... BC560 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 80 V : BC547/550 50 V : BC548/549 30 V VCEO Collecto

1.417. fdmc5614p.pdf Size:506K _fairchild_semi

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September 2010 FDMC5614P tm P-Channel PowerTrench MOSFET -60V, -13.5A, 100m? Features General Description Max rDS(on) = 100m? at VGS = -10V, ID = -5.7A This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been Max rDS(on) = 135m? at VGS = -4.5V, ID = -4.4A optimized for power management applications requiring a wide Lo

1.418. irgpc50ud2.pdf Size:214K _international_rectifier

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PD - 9.802A IRGPC50UD2 INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz) VCE(sat) ? 3.0V See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 27A E n-channel Description C

1.419. irfk3dc50.pdf Size:163K _international_rectifier

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1.420. irg4bac50u.pdf Size:181K _international_rectifier

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PD -93770 PROVISIONAL IRG4BAC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating VCES = 600V frequencies 8-40kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E Indust

1.421. irgcc50fe.pdf Size:19K _international_rectifier

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PD-9.1425 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.0V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(

1.422. irg4pc50f.pdf Size:146K _international_rectifier

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D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 3

1.423. irgc50b120ub.pdf Size:43K _international_rectifier

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1.424. irc530.pdf Size:226K _international_rectifier

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1.425. irgc5b120ub.pdf Size:15K _international_rectifier

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PD - 94315 IRGC5B120UB IRGC5B120UB IGBT Die in Wafer Form Features GEN5 Non Punch Through (NPT) Technology UltraFast 1200 V 10s Short Circuit Capability C Square RBSOA IC(nom) = 5A Positive VCE(on) Temperature Coefficient VCE(on) typ. = 4.01V @ Benefits IC(nom) @ 25C Benchmark Efficiency above 20KHz UltraFast IGBT Optimized for Welding, UPS, and Induction Heating G

1.426. irgc50b120kb.pdf Size:43K _international_rectifier

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1.427. irgcc50ke.pdf Size:19K _international_rectifier

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PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 3.0V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

1.428. irg4cc50kb.pdf Size:37K _international_rectifier

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PD- 91774 IRG4CC50KB IRG4CC50KB IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(

1.429. irg4pc50ud.pdf Size:213K _international_rectifier

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PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and highe

1.430. irfpc50lc.pdf Size:154K _international_rectifier

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PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.431. irfpc50a.pdf Size:95K _international_rectifier

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PD- 91898 SMPS MOSFET IRFPC50A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.58? 11A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

1.432. irg4cc50ub.pdf Size:35K _international_rectifier

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PD- 91764 IRG4CC50UB IRG4CC50UB IGBT Die in Wafer Form C 600 V Size 5 Ultra-Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(

1.433. irhn2c50se.pdf Size:32K _international_rectifier

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Provisional Data Sheet No. PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED IRHN2C50SE HEXFET TRANSISTOR IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary ? 600 Volt, 0.60? ?, (SEE) RAD HARD HEXFET ? ? Part Number BVDSS RDS(on) ID International Rectifiers (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail- IRHN2C50SE 600V 0.60? 10.4A

1.434. irgmc50f.pdf Size:547K _international_rectifier

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PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed Simple Drive Requirements VCES = 600V Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 1.7V G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) f

1.435. irg4pc50k.pdf Size:115K _international_rectifier

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PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides t

1.436. irgcc50me.pdf Size:19K _international_rectifier

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PD-9.1423 IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 5" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.5V Max. IC = 20A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(

1.437. irc540.pdf Size:222K _international_rectifier

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1.438. irg4pc50fd.pdf Size:211K _international_rectifier

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PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

1.439. irfk2dc50.pdf Size:165K _international_rectifier

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1.440. irg4pc50u.pdf Size:147K _international_rectifier

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D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE =

1.441. irgc5b60kb.pdf Size:15K _international_rectifier

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PD - 94408 IRGC5B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)= 5A Low VCE(on) VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Cont

1.442. irg4mc50u.pdf Size:144K _international_rectifier

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PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets n-channel Bene

1.443. irgpc50md2.pdf Size:148K _international_rectifier

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PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast WITH ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes VCE(sat) ? 2.0V Optimized for medium operating frequency ( 1 to G 10kHz) See Fig. 1 for Current vs. F

1.444. irfpc50.pdf Size:164K _international_rectifier

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1.445. irgmc50u.pdf Size:547K _international_rectifier

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PD -90719B IRGMC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed Simple Drive Requirements VCES = 600V Latch-proof Fast Speed operation 10 kHz VCE(on) max = 3.0V G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 20A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) f

1.446. irg4pc50kd.pdf Size:374K _international_rectifier

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PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher effic

1.447. irgpc50m.pdf Size:109K _international_rectifier

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PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features C Short circuit rated - 10s @ 125C, V = 15V GE VCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency VCE(sat) ? 2.2V G curve @VGE = 15V, IC = 35A E n-channel Description Insulated G

1.448. irg4cc58kb.pdf Size:41K _international_rectifier

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PD- 91870 IRG4CC58KB IRG4CC58KB IGBT Die in Wafer Form C 600 V Size 5.8 Ultra-Fast Speed G Short Circuit Rated 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES =

1.449. irgmvc50u.pdf Size:555K _international_rectifier

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PD -90825A IRGMVC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on) max = 3.0V Ultra Fast operation 10 kHz G Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A Ceramic Eyelets E n-channel Descriptio

1.450. irgpc50lc.pdf Size:154K _international_rectifier

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PD - 9.1233 IRFPC50LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 600V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.60? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 11A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

1.451. irg4pc50w.pdf Size:157K _international_rectifier

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D IRG4PC50W I T D T I T I T C Features Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A

1.452. irg4pc50s.pdf Size:164K _international_rectifier

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D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard TO

1.453. irg4cc50fb.pdf Size:35K _international_rectifier

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PD- 91828 IRG4CC50FB IRG4CC50FB IGBT Die in Wafer Form C 600 V Size 5 Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) Ga

1.454. irfpc50pbf.pdf Size:1924K _international_rectifier

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PD - 94934 IRFPC50PbF Lead-Free 1/8/04 Document Number: 91243 www.vishay.com 1 IRFPC50PbF Document Number: 91243 www.vishay.com 2 IRFPC50PbF Document Number: 91243 www.vishay.com 3 IRFPC50PbF Document Number: 91243 www.vishay.com 4 IRFPC50PbF Document Number: 91243 www.vishay.com 5 IRFPC50PbF Document Number: 91243 www.vishay.com 6 IRFPC50PbF TO-247AC Package Outline

1.455. irgc5b120kb.pdf Size:16K _international_rectifier

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PD - 94314 IRGC5B120KB IRGC5B120KB IGBT Die in Wafer Form Features GEN5 Non Punch Through (NPT) Technology Low VCE(on) 1200 V C 10s Short Circuit Capability IC(nom) = 5A Square RBSOA VCE(on) typ. = 2.55V @ Positive VCE(on) Temperature Coefficient IC(nom) @ 25C Benefits Motor Control IGBT Benchmark Efficiency for Motor Control G Rugged Transient Performance Short C

1.456. irfk4hc50.pdf Size:162K _international_rectifier

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1.457. irg4cc50sb.pdf Size:39K _international_rectifier

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PD- 91829 IRG4CC50SB IRG4CC50SB IGBT Die in Wafer Form C 600 V Size 5 Standard Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th

1.458. irfk6hc50.pdf Size:162K _international_rectifier

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1.459. irgc50b60kb.pdf Size:15K _international_rectifier

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PD - 94377 IRGC50B60KB Die in Wafer Form Features Features Features Features Features 600V C GEN5 Non Punch Through (NPT) Technology IC(nom)=50A Low VCE(on) VCE(on) typ.=2.0V @ 10s Short Circuit Capability Square RBSOA IC(nom) @ 25C Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated Benchmark Efficiency for Motor Con

1.460. irgpc50f.pdf Size:113K _international_rectifier

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PD - 9.695A IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 1.7V G @VGE = 15V, IC = 39A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

1.461. irg4bac50w.pdf Size:163K _international_rectifier

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PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features Designed expressly for switch-mode power VCES = 600V supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E Low IGBT conduction los

1.462. irgpc50s.pdf Size:108K _international_rectifier

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PD - 9.694A IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Switching-loss rating includes all "tail" losses VCES = 600V Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve VCE(sat) ? 1.6V G @VGE = 15V, IC = 41A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

1.463. irg4cc50wb.pdf Size:23K _international_rectifier

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PD- 91836A IRG4CC50WB IRG4CC50WB IGBT Die in Wafer Form C 600 V Size 5 WARP Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 2.3V Max. IC = 10A, TJ = 25C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V VGE(th) G

1.464. irgpc50kd2.pdf Size:195K _international_rectifier

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1.465. irgpc50fd2.pdf Size:215K _international_rectifier

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PD - 9.800 IRGPC50FD2 INSULATED GATE BIPOLAR TRANSISTOR Fast CoPack IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for medium operating frequency (1 to VCE(sat) ? 1.7V 10kHz) See Fig. 1 for Current vs. Frequency curve G @VGE = 15V, IC = 39A E n-channel Description Co-

1.466. irhm2c50se.pdf Size:98K _international_rectifier

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PD - 91252A REPETITIVE AVALANCHE AND dv/dt RATED IRHM2C50SE IRHM7C50SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD Product Summary ? 600Volt, 0.6? ?, (SEE) RAD HARD HEXFET ? ? Part Number BVDSS RDS(on) ID International Rectifiers (SEE) RAD HARD technology IRHM2C50SE 600V 0.60? 10.4A HEXFETs demonstrate immunity to SEE failure. Ad- ditionally, under identical pr

1.467. irgmic50u.pdf Size:318K _international_rectifier

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PD -90813A IRGMIC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on) max = 3.0V G Ultra Fast operation 10 kHz Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E n-channel Description Insulated Gate

1.468. irg4bac50s.pdf Size:135K _international_rectifier

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PD - 93771 PROVISIONAL IRG4BAC50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry Super-220 (TO-273AA) package @VGE = 1

1.469. irg4pc50s-p.pdf Size:144K _international_rectifier

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D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 Industry standard

1.470. irg4mc50f.pdf Size:142K _international_rectifier

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PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-channel Benefits

1.471. 2sc5507.pdf Size:91K _nec

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PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES Low noise and high gain with low collector current NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA fT = 25 GHz

1.472. 2sc5674.pdf Size:100K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5674 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 21.0 GHz TYP., ?S21e?2 = 11.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt 3-pin lead-less minimold package (1005 PKG)

1.473. 2sc5745.pdf Size:118K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5745 50 pcs (Non reel) 8 mm wide embos

1.474. 2sc5409.pdf Size:39K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 16 GHz TYP. 2.10.1 High gain 1.250.1 |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY P

1.475. 2sc5005.pdf Size:47K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5005 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the transistor has been applied ultra super mini mold package. 1.6 0.1 0.8 0.1 2 FEATURES High fT

1.476. 2sc5615.pdf Size:126K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed (1.0 ? 0.5 ? 0.5 mm) • NF = 1.4 dB TYP., ?S21e?2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5615 50 pcs (Non reel) • 8 mm wide embossed taping 2SC561

1.477. 2sc5182.pdf Size:56K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.80.2 Mini-Mold package +0.1 1.5 0.65 0.15 EIAJ: SC-59 ORDERING INFORMATION 2 PART Q

1.478. 2sc5736.pdf Size:125K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5736 50 pcs (Non reel) 8 mm wide embos

1.479. ne661m04_2sc5507.pdf Size:35K _nec

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PRELIMINARY DATA SHEET NPN SILICON HIGH NE661M04 FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 25 GHz HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of just 0.59 mm. Flat Lead Style for better RF performance. DESCRIPTION M04 T

1.480. ne680xx_2sc5013_2sc5008_2sc4228_2sc3585_2sc3587_2sc4095.pdf Size:247K _nec

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NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

1.481. 2sc5191.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES Low Voltage Operation, Low Phase Distortion Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 3-pin mini

1.482. 2sc5184.pdf Size:58K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.1 Super Mini-Mold package 1.25 0.1 EIAJ: SC-70 ORDERING INFORMATION 2 PART

1.483. 2sc5603.pdf Size:96K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Qua

1.484. 2sc5181.pdf Size:44K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5181 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 10.5 dBTYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 9.0 dBTYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.6 0.1 Ultra Super Mini-Mold package 0.8 0.1 2 O

1.485. 2sc5011.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package PACKAGE DIMENSIONS • High Gain Bandwidth Product in millimeters (fT = 6.5 GHz TYP.) 2.1 ± 0.2 • Low Noise, High Gain 1.25 ± 0.1 0.3 +0.1 –0.05 • Low Voltage Operation (LEADS 2, 3, 4) 2 3 ORDERING INFORMATION PA

1.486. 2sc5616_ne688m13.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 0.150.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT: +0.1 +0.1 1.0 0.7 0.05 3 3

1.487. 2sc5454.pdf Size:79K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise +0.2 2.8 0.3 +0.2 Small reverse transfer capacitance 1.5 0.1 Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V 5 5 Collector to Emitter Volt

1.488. 2sc5752.pdf Size:88K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERI

1.489. 2sc5618.pdf Size:97K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5618 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • NF = 1.4 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz • 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5618 50 pcs (Non reel) • 8 mm wide embosse

1.490. 2sc5007.pdf Size:53K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct n

1.491. 2sc5004.pdf Size:47K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5004 is a low supply voltage transistor designed for UHF in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package. 2 FEATURES High f

1.492. 2sc5655.pdf Size:93K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 ? 0.6 ? 0.5 mm) NF = 1.5 dB TYP., ?S21e?2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC5655-T1 10 kpcs

1.493. 2sc5195.pdf Size:54K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 1.60.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 0.80.1 NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 2 Large Absolute Maximum Collector Current IC = 100 mA Supercompact M

1.494. 2sc5667.pdf Size:86K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5667 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? 3-PIN ULTRA SUPER MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2 V, IC = 20 mA Hig

1.495. 2sc5599.pdf Size:101K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5599 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin ultra super minimold package(t = 0.75 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5599 50 pcs (Non reel) 8 mm wide embossed taping 2SC5

1.496. 2sc5369.pdf Size:60K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5369 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSION (in mm) High fT 2.10.1 14 GHz TYP. 1.250.1 High gain | S21e | 2 = 14 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA 6-pin small mini mold package ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SY

1.497. 2sc5801.pdf Size:33K _nec

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1.498. 2sc5751.pdf Size:78K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin

1.499. 2sc5194.pdf Size:65K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise 2.10.2 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Current IC = 100 mA 4-Pin Compact Mi

1.500. 2sc5787.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., ?S21e?2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopted High rel

1.501. 2sc5010.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nit

1.502. ne856m13_2sc5614.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 1.0 X 0.5 X 0.5 mm 0.150.05 0.3 Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 LOW NOISE FIGURE: +0.1 +0.1 1.0 0.7 0.05 3 3 0.2 NF =

1.503. 2sc5289.pdf Size:114K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit: mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P1 = 27 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold Package EIA

1.504. 2sc5012_2sc5007_2sc4227_2sc3583_2sc3604_2sc4094_ne681.pdf Size:218K _nec

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NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

1.505. 2sc5753.pdf Size:85K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin

1.506. 2sc5650_ne681m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT: 1 fT = 7 GHz LOW NO

1.507. 2sc5754.pdf Size:85K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: ?C = 60% UHS0-HV technology (fT = 25 GHz) adopted

1.508. 2sc5179.pdf Size:57K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 9 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.10.1 Small Mini-Mold package 1.250.1 EIAJ: SC-70 ORDER

1.509. 2sc5800.pdf Size:104K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5800 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low phase distortion, low voltage operation Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5800 50 pcs (Non reel) 8 mm wide embos

1.510. 2sc5193.pdf Size:55K _nec

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DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING (Units: mm) Low Voltage Operation, Low Phase Distortion Low Noise 2.10.1 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz 1.250.1 NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Large Absolute Maximum Collector Curre

1.511. ne58219_2sc5004.pdf Size:1827K _nec

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DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the 1.6 0.1 0.8 0.1 transistor has been applied ultra super mini mold package.

1.512. 2sc5843.pdf Size:59K _nec

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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz

1.513. 2sc5006.pdf Size:52K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct n

1.514. 2sc5008.pdf Size:51K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low 1.6 0.1 noise figure, high gain, and high current capability achieve a very wide 0.8 0.1 dynamic r

1.515. 2sc5761.pdf Size:75K _nec

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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE ? HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise ? high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT = 60 GHz, fm

1.516. 2sc5668.pdf Size:87K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5668 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP., Ga = 11 dB @ f = 2 GHz, VCE = 2 V, IC = 5 mA Maximum available power gain: MAG. = 12.5 dB TYP. @ f = 2 GHz, VCE = 2

1.517. 2sc5606.pdf Size:67K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Suitable for high-frequency oscillation fT = 25 GHz technology adopted 3-pin ultra super minimold ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5606 50 pcs (Non reel) 8 mm wide embossed taping 2SC5606-T1 3 kpcs/reel

1.518. 2sc5508.pdf Size:76K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low-noise, high-gain amplification applications NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum available power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz f

1.519. 2sc5183.pdf Size:60K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Noise PACKAGE DIMENSIONS (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.8+0.2 0.3 4-pin Mini-Mold package 1.5+0.2 0.1 EIAJ: SC-61 ORDERING INFORMATION P

1.520. 2sc5737.pdf Size:97K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5737 50 pcs (Non reel) 8 mm wide embos

1.521. ne856_2sc5011_2sc5006_2sc4226_2sc3355_2sc3603_2sc3356_2sc3357_2sc3603_2sc4093.pdf Size:257K _nec

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NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz LOW NOISE FIGURE: 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise

1.522. 2sc5013.pdf Size:44K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 10 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 PART QUANTITY P

1.523. 2sc5012.pdf Size:43K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 9 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 0.3 +0.1 0.05 (LEADS 2, 3, 4) ORDERING INFORMATION 2 3 PART QUANTITY P

1.524. 2sc5617.pdf Size:103K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5617 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz ?S21e?2 = 11.0 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5617 50 pcs (Non reel) 8 mm wide embossed ta

1.525. 2sc5436.pdf Size:69K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5186 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5436 50 pcs (Non reel) 8 mm wide embossed taping 2SC5436-T1

1.526. 2sc5288.pdf Size:117K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones (DECT, PHS, etc.). (Unit: mm) 2.8+0.2 FEATURES 0.3 1.5+0.2 0.1 P1 = 24 dBm TYP. @f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8 4-Pin Mini Mold Package EIA

1.527. 2sc5653_ne687m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz LOW

1.528. 2sc5615_ne681m13.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: Small transistor outline +0.1 +0.1 0.5 0.05 0.150.05 0.3 1.0 X 0.5 X 0.5 mm Low profile / 0.50 mm package height 1 2 Flat lead style for better RF performance 0.35 HIGH GAIN BANDWIDTH PRODUCT: +0.1 +0.1 1.0 0.7 0.05 3 3

1.529. 2sc5185.pdf Size:50K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low Noise (Units: mm) NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 2.1 0.2 Super Mini-Mold package 1.25 0.1 ORDERING INFORMATION PART QUANTITY ARRANGEMENT

1.530. 2sc5186.pdf Size:46K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-pin ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5186 50 pcs (Non reel

1.531. 2sc5177.pdf Size:56K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low Current Consumption and High Gain PACKAGE DIMENSIONS |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.80.2 Mini-Mold package 1.5 0.65+0.1 0.15 EIAJ: SC-59 OR

1.532. 2sc5192.pdf Size:68K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS Low Voltage Operation, Low Phase Distortion (Unit: mm) Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz +0.2 2.8 0.3 +0.2 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.5 0.1 Large Absolute Maximum Collector Current I

1.533. 2sc5677.pdf Size:100K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5677 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5677 50 pcs (Non reel) 8 mm wide embossed taping 2SC5677-T3 10 kpcs/reel Pin 2

1.534. 2sc5676.pdf Size:97K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5676 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5676 50 pcs (Non reel) • 8 mm

1.535. 2sc5336.pdf Size:47K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5336 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain: ?S21e?2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 4-pin power minimold package with improved gain from the 2SC3357 ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5336 25 pcs (Non reel) Magazine case 2SC5336

1.536. 2sc5180.pdf Size:46K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS Low current consumption and high gain (Units : mm) ?S21e? 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz ?S21e? 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.1 0.2 Supper Mini-Mold package 1.25 0.1 ORDER

1.537. 2sc5435.pdf Size:55K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5010 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5435 50 pcs (Non reel) 8 mm wide embossed taping 2SC5435-T1

1.538. 2sc5015.pdf Size:49K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5015 50 pcs (Non re

1.539. 2sc5750.pdf Size:78K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold package ORDERI

1.540. 2sc5178.pdf Size:82K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain PACKAGE DIMENSIONS |S21e|2 = 11.5 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz (Units: mm) |S21e|2 = 10.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 2.8 +0.2 0.3 4-pin Mini-Mold package 1.5 +0.2 0.

1.541. 2sc5431.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel Pin 3 (

1.542. 2sc5338.pdf Size:51K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5338 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES High gain: ?S21e?2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz Low distortion, low voltage: IM2 = -55 dB TYP., IM3 = -76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBV/75? 4-pin power minimold package with improved gain from the 2SC470

1.543. 2sc5432.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5006 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5432 50 pcs (Non reel) 8 mm wide embossed taping 2SC5432-T1

1.544. 2sc5651_ne688m23.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance HIGH GAIN BANDWIDTH PRODUCT: 0.25 1 fT = 9.5 GHz LOW

1.545. 2sc5602.pdf Size:105K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES High-gain transistor for buffer amplifier : ?S21e?2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA fT = 25 GHz UHS0 (Ultra High Speed Process) technology adopted 3-pin ultra super minimold package (t = 0.75 mm) ORDERING INFORMATION

1.546. 2sc5433.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5007 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5433 50 pcs (Non reel) 8 mm wide embossed taping 2SC5433-T1

1.547. 2sc5656.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5656 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 ? 0.6 ? 0.5 mm) NF = 1.3 dB TYP., ?S21e?2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5656 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC5656-T1 10 kpc

1.548. 2sc5437.pdf Size:60K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5195 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5437 50 pcs (Non reel) 8 mm wide embossed taping 2SC5437-T1

1.549. 2sc5455.pdf Size:79K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications +0.2 2.8 0.3 +0.2 High gain, low noise 1.5 0.1 Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V

1.550. 2sc5600.pdf Size:98K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold (t = 0.59 mm) ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5600 50 pcs (Non reel) 8 mm wide embossed taping 2SC5600-T1 3

1.551. 2sc5434.pdf Size:56K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5008 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5434 50 pcs (Non reel) 8 mm wide embossed taping 2SC5434-T1

1.552. 2sc5704.pdf Size:101K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE ? ? HIGH-GAIN AMPLIFICATION ?? 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise ? high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less minimold package ORDER

1.553. 2sc5652_ne685m23.pdf Size:18K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.4

1.554. 2sc5509.pdf Size:81K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for medium output power amplification NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 G

1.555. 2sc5009.pdf Size:59K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal amplifiers from VHF band to L band. Low in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6 0.1 dynamic range and excel

1.556. 2sc5014.pdf Size:49K _nec

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DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Small Package PACKAGE DIMENSIONS High Gain Bandwidth Product (fT = 12 GHz TYP.) in millimeters Low Noise, High Gain 2.1 0.2 Low Voltage Operation 1.25 0.1 ORDERING INFORMATION PART QUANTITY PACKING STYLE NUMBER 2SC5014-T1 3 Kpcs/Re

1.557. 2sc5786.pdf Size:95K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., ?S21e?2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GH

1.558. 2sc5408.pdf Size:50K _nec

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PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 17 GHz TYP. 2.10.1 High gain 1.250.1 |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMBER QUANTITY

1.559. 2sc5649_ne856m23.pdf Size:19K _nec

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH C

1.560. 2sc5746.pdf Size:94K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5746 50 pcs (Non reel) 8 mm wide embossed taping 2SC5746-T3 10 kpcs/reel Pin 2

1.561. 2sc5337.pdf Size:47K _nec

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5337 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz 4-pin power minimold package with improv

1.562. ksc5027.pdf Size:24K _samsung

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KSC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A 1.Base 2.Collector 3.Emitter C

1.563. ksc5338f.pdf Size:23K _samsung

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KSC5338F NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A 1.Base 2

1.564. ksc5338.pdf Size:23K _samsung

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KSC5338 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A 1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A Base C

1.565. ksc5039f.pdf Size:24K _samsung

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KSC5039F NPN PLANAR SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation (TC=25 ) PC 30 W J

1.566. ksc5337.pdf Size:25K _samsung

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NPN TRIPLE DIFFUSED KSC5337 PLANER SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base

1.567. ksc5337f.pdf Size:26K _samsung

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KSC5337F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit V Collector-Base Vltage VCBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage VEBO 9 A Collector Current (DC) IC 8 A Collector Current (Pulse) IC 15 A Base Current IB 4 W Collector Dissipati

1.568. ksc5367.pdf Size:31K _samsung

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NPN TRIPLE DIFFUSED KSC5367 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6 1.B

1.569. ksc5321f.pdf Size:29K _samsung

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NPN TRIPLE DIFFUSED KSC5321F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A Pulse IBP

1.570. ksc5338d.pdf Size:153K _samsung

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KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram Emi

1.571. ksc5321.pdf Size:28K _samsung

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NPN TRIPLE DIFFUSED KSC5321 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A 1.Base 2.Co

1.572. ksc5027f.pdf Size:74K _samsung

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KSC5027F NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING TO-220F WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1100 V Collector-Emitter Voltage V CEO 800 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 3 A Collector Current (Pulse) IC 10 A Base Current IB 1.5 A Collector Dissipation (TC=25

1.573. ksc5086.pdf Size:20K _samsung

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NPN TRIPLE DIFFUSED KSC5086 PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY TO-3PF HORIZONTAL DEFLECTION OUTPUT (DAMPER DIODE BUILT IN) High Collector -Base Voltage (VCBO=1500V) High Speed Switching (tf=0.1usec Typ) ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1500 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO

1.574. ksc5367f.pdf Size:27K _samsung

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NPN TRIPLE DIFFUSED KSC5367F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY High speed Switching TO-220F Wide Safe Operating Area High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 1,600 V Collector Emitter Voltage VCEO 800 V Emitter Base Voltage VEBO 12 V Collector Current DC IC 3 A Pulse ICP 6

1.575. ksc5021p.pdf Size:72K _samsung

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KSC5021 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 HIGH SPEED SWITCHING : tf = 0.1 (Typ) WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 500 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 2 A 1.Base 2.Collector

1.576. ksc5039.pdf Size:23K _samsung

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KSC5039 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 800 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 7 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current IB 3 A Collector Dissipation ( TC=25 ) PC 70 W 1.Base 2.C

1.577. ksc5030pwd.pdf Size:24K _samsung

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KSC5030 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY TO-3P HIGH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector- Base Voltage VCBO 1100 V Collector- Emitter Voltage VCEO 800 V Emitter- Base Voltage VEBO 7 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 20 A Base Current IB 3 A Collector Dissipation (TC=25 ) P

1.578. 2sc5875.pdf Size:98K _rohm

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2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf : Typ. : 20ns at IC = 2A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter 4)

1.579. 2sc5916.pdf Size:48K _rohm

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2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base 4) Complements the 2SA2113 (2) Emitter Each le

1.580. 2sc5877s.pdf Size:98K _rohm

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2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically : 0.45 (Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements the

1.581. 2sc5876.pdf Size:928K _rohm

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Medium power transistor (60V, 0.5A) 2SC5876 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) UMT3 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 1.25 3) Strong discharge power for inductive load and 2.1 capacitance load. 4) Complements the 2SA2088 0.1Min. Each lead has same dimensions (1)Emitter (2)B

1.582. 2sc5585_2sc5663.pdf Size:68K _rohm

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2SC5585 / 2SC5663 Transistors Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. External dimensions (Unit : mm) Applications For switching 2SC5585 For muting (1) (2) (3) 0.8 Features 1.6 1) High current. 2) Low VCE(sat). 0.1Min. (1) Emitter R

1.583. umc5n_fmc5a_c5_sot23-5_sot353.pdf Size:107K _rohm

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Transistors Power management (dual digital transistors) UMC5N / FMC5A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143X chip and DTC144E chip in a UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN/PNP silicon transistor (Built-in resistor type) FAbsolute maximum ratings (Ta = 25_C)

1.584. 2sc5868.pdf Size:929K _rohm

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Medium power transistor (60V, 0.5A) 2SC5868 ?Features ?Dimensions (Unit : mm) 1) High speed switching. TSMT3 2.8 (Tf : Typ. : 80ns at IC = 500mA) 1.6 2) Low saturation voltage, typically : (Typ. 75mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2090 (1) Base (2) Emitter 0.3 0.6 Each lead has same dimen

1.585. 2sa1964_2sc5248.pdf Size:38K _rohm

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2SA1964 Transistors Transistors 2SC5248 (SPEC-A315) (SPEC-C315) 282

1.586. 2sc5526.pdf Size:52K _rohm

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2SC5526 Transistors High-speed Switching Transistor (60V, 12A) 2SC5526 External dimensions (Units: mm) Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 10.0 4.5 2) High switching speed. 2.8 3.2 ? (Typ. tf = 0.1s at Ic = 6A) 3) Wide SOA. (safe operating area) 1.2 1.3 4) Complements the 2SA2007. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (

1.587. 2sc5661_2sc4725_2sc4082_2sc3837k.pdf Size:187K _rohm

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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb?Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base ?Packaging specifications and hFE ROHM : VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package VMT3 EMT3 U

1.588. 2sc5511.pdf Size:51K _rohm

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2SC5511 Transistors High-voltage Switching (Audio output amplifier transistor, TV velocity modulation transistor) (160V, 1.5A) 2SC5511 Features External dimensions (Units : mm) 1) Flat DC current gain characteristics. 2) High breakdown voltage. (BVCEO = 160V) 10.0 4.5 3) High fT. (Typ. 150MHz) 3.2 2.8 ? 4) Wide SOA (safe operating area). 5) Complements the 2SA2005. 1.2 1.3 0.8

1.589. 2sc5880.pdf Size:87K _rohm

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2SC5880 Transistors Power transistor (60V, 2A) 2SC5880 Dimensions (Unit : mm) Features 1) High speed switching. ATV (tf : Typ. : 35ns at IC = 2A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2093 (1) Emitter (2) Collector Taping specifications (3

1.590. 2sc5161.pdf Size:74K _rohm

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2SC5161 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5161 External dimensions (Units : mm) Features 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) 2.3+0.2 6.50.2 -0.1 C0.5 (Ic / IB =1A / 0.2A) 5.1+0.2 0.50.1 -0.1 2) High breakdown voltage. BVCEO = 400V 3) Fast switching. 0.650.1 0.75 tf ? 1.0s (Ic = 0.8A) 0.9 0.50.1 2.30.2 2.30.2 1.00.2 Structure (1)

1.591. 2sc5147.pdf Size:51K _rohm

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2SC5147 Transistors Medium Power Transistor (Chroma Output) (300V, 0.1A) 2SC5147 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = 300V) 2) Low collector output capacitance. 10.0 4.5 (Typ.3pF at VCB = 30V) 3.2 2.8 ? 3) Wide SOA. (safe operating area) 4) Ideal for color TV chroma output and amplification of 1.2 1.3 video signals. 0.8 0.75 2.54 2.54

1.592. 2sc5659.pdf Size:140K _rohm

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High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K ?Features ?Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter ?Absolute maximum ratings (Ta=25?C) (3) Collector Parameter S

1.593. 2sc5574.pdf Size:52K _rohm

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2SC5574 Transistors Power Transistor (80V, 4A) 2SC5574 Features External dimensions (Units : mm) 1) Low saturation voltage. (Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 10.0 4.5 2) Excellent DC current gain characteristics. 3.2 2.8 ? 3) Pc = 30W (Tc = 25C) 4) Wide SOA (safe operating area). 1.2 1.3 5) Complements the 2SA2017. 0.8 0.75 2.54 2.54 2.6 (1) (2) (3) ( ) (1) (2) (3

1.594. 2sc5060.pdf Size:52K _rohm

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2SC5060 Transistors Power transistor (9010V, 3A) 2SC5060 External dimensions (Units : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 2.5 6.8 3) Strong protection against reverse power surges due to L loads. 4) Darlington connection for high DC current gain. 0.65Max. 5) Built-in resistor between base and emitter. 0.5

1.595. umc5n.pdf Size:106K _rohm

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Transistors Power management (dual digital transistors) UMC5N / FMC5A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143X chip and DTC144E chip in a UMT or SMT package. 2) Ideal for power switch circuits. 3) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN/PNP silicon transistor (Built-in resistor type) FAbsolute maximum ratings (Ta = 25_C)

1.596. 2sc5874s.pdf Size:98K _rohm

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2SC5874S Transistors Medium power transistor (30V, 1.0A) 2SC5874S External dimensions (Unit : mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf : Typ. : 35ns at IC = 1.0A) 2) Low saturation voltage, typically : 0.45 (Typ. 150mV at IC = 1.0A, IB = 100mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complement

1.597. 2sc5532.pdf Size:46K _rohm

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2SC5532 Transistors High-voltage Switching Transistor (400V, 5A) 2SC5532 Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A) 2) High switching speed. (tf : Max. 1s at Ic =4A) 3) Wide SOA (safe operating area). Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V IC

1.598. 2sc5730k.pdf Size:62K _rohm

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2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit : mm) Features 1) High speed switching. SMT3 (Tf : Typ. : 50ns at IC = 1.0A) (SC-59) 2) Low saturation voltage, typically : (Typ. 150mV at IC = 500mA, IB = 50mA) 1.6 3) Strong discharge power for inductive load and 2.8 capacitance load. (1) Emitter 4) Complements the 2

1.599. 2sc2412k_2sc4081_2sc4617_2sc5658_2sc1740s.pdf Size:171K _rohm

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General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S ?Features ?Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 ?Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN silicon t

1.600. 2sc5103.pdf Size:164K _rohm

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High speed switching transistor (60V, 5A) 2SC5103 ?Features ?Dimensions (Unit : mm) 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 ?s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. 0.9 C0.5 0.8Min. (1) Base 1.5 2.5 (2) Collector ?Absolute maximum ratings (Ta=25?C) ROHM : CPT3 9.5 (3) Emitter P

1.601. 2sc5001.pdf Size:66K _rohm

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2SC5001 Transistors Low VCE(sat) Transistor (Strobe flash) (20V, 10A) 2SC5001 External dimentions (Unit : mm) Features 1) Low saturation voltage, typically VCE(sat) = 0.13V at IC / CPT3 6.5 5.1 IB= 4A / 50mA. 2.3 0.5 2) High current capacity, typically IC = 10A for DC operation and 15A for 10ms pulse. 3) Complements the 2SA1834. 0.75 Packaging specifications an

1.602. 2sa1834_2sc5001.pdf Size:50K _rohm

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2SA1834 Transistors Transistors 2SC5001 (96-106-B217) (96-193-D217) 292 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only.

1.603. 2sa1900_2sc5053.pdf Size:47K _rohm

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2SA1900 Transistors Transistors 2SC5053 (96-115-B352) (96-196-D352) 297 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only.

1.604. 2sc5825.pdf Size:167K _rohm

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Power transistor (60V, 3A) 2SC5825 ?Features ?Dimensions (Unit : mm) 1) High speed switching. CPT3 (Tf : Typ. : 30ns at IC = 3A) (SC-63) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2072. ?Applications (1) Base Low frequency amplifier (2) Co

1.605. 2sc5658.pdf Size:77K _rohm

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2SC2412K / 2SC4081 / 2SC4617 / Transistors 2SC5658 / 2SC1740S General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S External dimensions (Units : mm) Features 1) Low Cob. 2SC2412K 2SC4081 2SC4617 Cob=2.0pF (Typ.) (1) 2) Complements the 2SA1037AK / (2) (3) 1.25 2SA1576A / 2SA1774H / 1.6 0.8 2.1 2.8 2SA2029 / 2SA933AS. 1.6 0.1Min. 0.1Min. 0.

1.606. 2sc5576.pdf Size:49K _rohm

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2SC5576 Transisitors Medium Power Transistor (Motor or Relay drive) (6010V, 4A) 2SC5576 Features Circuit diagram 1) Built-in zener diode between collector and base. C 2) Strong protection against reverse power surges due to "L" loads. B 3) Built-in resistor between base and emitter. 4) Built-in damper diode. R1 R2 E B : Base R1 4.5k? C : Collector R2 300? E : Emitter Absol

1.607. 2sc5662_2sc4726_2sc4083_2sc3838k.pdf Size:147K _rohm

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High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K ?Features ?Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb?Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM : VMT3 ?Packaging specifications and hFE Type 2S

1.608. 2sc5531.pdf Size:51K _rohm

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2SC5531 Transistors High-Voltage Switching Transistor (400V, 2A) 2SC5531 Features External dimensions (Units : mm) 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) 13.1 (IC / IB =1A / 0.2A) 3.2 2) High breakdown voltage. VCEO=400V 3) Fast switching. 8.8 tf ?1.0s ( ) 1 Base ( ) 2 Collector (IC=0.8A) ( ) 3 Emitter 0.5Min. ROHM : PSD3 EIAJ : SC-83A Structure Three-layer, di

1.609. 2sc5865.pdf Size:931K _rohm

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High voltage discharge, High speed switching, Low Noise (60V, 1A) 2SC5865 ?Features ?Dimensions (Unit : mm) 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) TSMT3 1.0MAX 2) Low saturation voltage, typically. 2.9 0.85 : (Typ. 200mV at IC = 500mA, IB = 50mA) 0.4 0.7 3) Strong discharge power for inductive load and ( ) 3 capacitance load. 4) Low Noise. 5) Complemen

1.610. 2sc5274.pdf Size:20K _rohm

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Transistors 2SC5274 (96-203-C329) 304

1.611. 2sc5824.pdf Size:934K _rohm

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Power transistor (60V, 3A) 2SC5824 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) MPT3 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. (1)Base(Gate) Each lead has same dimensions ?Applications (2)Collector(Drain)

1.612. 2sc5826.pdf Size:60K _rohm

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2SC5826 Transistors Power transistor (60V, 3A) 2SC5826 External dimensions (Unit : mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically : (Typ. 200mV at IC = 2A, IB = 0.2mA) 0.65Max. 3) Strong discharge power for inductive load and 0.5 capacitance load. (1) (2) (3) (1) Emitter 2.54 2.54 4) Complements

1.613. 2sc5575.pdf Size:52K _rohm

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2SC5575 Transistors High-voltage Switching Transisitor (Power Supply) (120V, 7A) 2SC5575 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ. 0.17V at IC / IB = 5 / 0.5A) 2) Fast switching. (tf : Typ. 0.18s at IC = 5A) 3) Wide SOA. (safe operating area) 10.0 4.5 3.2 2.8 ? Absolute maximum ratings (Ta = 25C) 1.2 1.3 Parameter Symbol Limits Unit 0.8 Collector-base

1.614. 2sc5866.pdf Size:929K _rohm

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Medium power transistor (60V, 2A) 2SC5866 ?Features ?Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A) 2.8 1.6 TSMT3 2) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0m, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2094 Each lead has same dimensions (1)Base 0.3 0.6 (2)Emitter A

1.615. 2sc5659_2sc4618_2sc4098_2sc2413k.pdf Size:140K _rohm

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High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K ?Features ?Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM : VMT3 (2) Emitter ?Absolute maximum ratings (Ta=25?C) (3) Collector Parameter S

1.616. 2sc5730.pdf Size:50K _rohm

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2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base (2) Emitter 4) Complements the 2SA2048

1.617. irfpc50a_sihfpc50a.pdf Size:889K _vishay

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IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.58 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 70 Ruggedness Qgs (nC) 19 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 28 and Current Configuration Sing

1.618. irfpc50lc_sihfpc50lc.pdf Size:597K _vishay

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IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.60 Enhanced 30 V VGS Rating RoHS* Reduced Ciss, Coss, Crss COMPLIANT Qg (Max.) (nC) 84 Isolated Central Mounting Hole Qgs (nC) 18 Dynamic dV/dt Rating Qgd (nC) 36 Repetitive Avalanche Rated

1.619. irfpc50_sihfpc50.pdf Size:1457K _vishay

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IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 600 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 69 Simple Drive Requirements Configuration Single Compliant to RoHS Directi

1.620. umc5n.pdf Size:283K _diodes

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UMC5N DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS Features Epitaxial Planar Die Construction Surface Mount Package Suited for Automated Assembly Simplifies Circuit Design and Reduces Board Space Lead Free/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data SOT-353 Case: SOT-353 (1) (3) (2) 3 2 1 Case Material: Molded Plastic. UL Flammability R1 R2

1.621. bc549b-c_bc550b-c.pdf Size:52K _diodes

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Low Noise Transistors BC549B,C NPN Silicon BC550B,C MAXIMUM RATINGS Rating Symbol BC549 BC550 Unit CollectorEmitter Voltage VCEO 30 45 Vdc CollectorBase Voltage VCBO 30 50 Vdc EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 100 mAdc 1 Total Device Dissipation @ TA = 25C PD 625 mW 2 Derate above 25C 5.0 mW/C 3 Total Device Dissipation @ TC = 25C PD 1.5 Watt

1.622. bsc520n15ns3rev2.2.pdf Size:657K _infineon

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pe % ! !% D #:A0< &<,9=4=>:< #<:/?.> %?88,E5AB9?> m D n) m x P ' 381>>5< >?A=1< <5E5< 1 D P G35<<5>C 71C5 381A75 G @A?4D3C ( & D n) G? D ON? P .5AH A5B9BC1>35 D n) P S ?@5A1C9>7 C5=@5A1CDA5 P )2 6A55 <514 @<1C9>7 + ?", 3?=@<91>C 1) P * D1<96954 133?A49>7 C? $ 6?A C1A75C 1@@<931C9?> P "1 6A55 133?A49>7 C? #

1.623. fmd47-06kc5_fdm47-06kc5.pdf Size:77K _ixys

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FMD 47-06KC5 Advanced Technical Information FDM 47-06KC5 ID25 = 47 A CoolMOS™ 1) Pow er MOSFET VDSS = 600 V with HiPerDyn™ FRED RDS(on) max = 0.045 Ω Buck and Boost Topologies 3 3 ISOPLUS i4™ Electrically isolated back surface T 2500 V electrical isolation 5 D N-Channel Enhancement Mode 1 4 4 Low RDSon, high VDSS MOSFET isolated back E72873 5 Ultra low gate charg

1.624. ixkp20n60c5m.pdf Size:101K _ixys

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IXKP 20N60C5M ID25 = 7.6 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.2 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability V

1.625. ixkh70n60c5.pdf Size:106K _ixys

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IXKH 70N60C5 ID25 = 70 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.045 ? N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D D(TAB) S S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability VGS 20 V - Lowest resistan

1.626. fmd15-06kc5_fdm15-06kc5.pdf Size:76K _ixys

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FMD 15-06KC5 Advanced Technical Information FDM 15-06KC5 ID25 = 15 A CoolMOS™ 1) Power MOSFET VDSS = 600 V with HiPerDyn ™ FRED RDS(on) max = 0.165 Ω Buck and Boost Topologies 3 3 ISOPLUS i4™ Electrically isolated back surface T 2500 V electrical isolation 5 D N-Channel Enhancement Mode 1 4 4 Low RDSon, high VDSS MOSFET isolated back E72873 5 Ultra low gate char

1.627. ixkc23n60c5.pdf Size:262K _ixys

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IXKC 23N60C5 ID25 = 23 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.1 ? Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode D ISOPLUS220TM Low RDSon, high VDSS MOSFET Ultra low gate charge G G D ? S isolated back S surface E72873 Preliminary data Features MOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum

1.628. ixkp13n60c5m.pdf Size:100K _ixys

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IXKP 13N60C5M ID25 = 6.5 A CoolMOS 1) Power MOSFET VDSS = 600 V RDS(on) max = 0.3 ? Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D TO-220 FP Ultra low gate charge G D G S Preliminary data S Features MOSFET fast CoolMOS 1) power MOSFET Symbol Conditions Maximum Ratings 4th generation VDSS TVJ = 25C 600 V - High blocking capability V

1.629. cpc5602.pdf Size:79K _ixys

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CPC5602 N Channel Depletion Mode FET Parameter Rating Units Description Drain-to-Source Voltage (VDS) 350 V The CPC5602 is an N channel depletion mode Field ? Max On-Resistance (Ron-max)14 Effect Transistor (FET) that utilizes Clares proprietary third generation vertical DMOS process. The third Max Power 2.5 W generation process realizes world class, high voltage MOSFET performance

1.630. bc546_bc547_bc548_to-92.pdf Size:295K _mcc

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BC546A/B/C MCC Micro Commercial C omponents TM BC547A/B/C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 BC548A/B/C Fax: (818) 701-4939 Features NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Amplifier Transistor Through Hole Package ? 150 C Junction Temperature 62

1.631. bc556b_bc557a-b-c_bc558b.pdf Size:81K _onsemi

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BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon http://onsemi.com Features Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 3 BC556 -65 EMITTER BC557 -45 BC558 -30 Collector - Base Voltage VCBO Vdc BC556 -80 BC557 -50 BC558 -30 TO-92 Emitter - Base Voltage VEBO -5.0 Vdc CASE 29

1.632. emc2dxv5t1_emc3dxv5t1_emc4dxv5t1_emc5dxv5t1.pdf Size:137K _onsemi

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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http://onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resistor

1.633. bc559.pdf Size:125K _onsemi

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BC559 Low Noise Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol BC559 BC560 Unit http://onsemi.com Collector-Emitter Voltage VCEO -30 -45 Vdc Collector-Base Voltage VCBO -30 -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current Continuous IC -100 mAdc Total Device Dissipation @ PD mW 1 TA = 25C 625 2 3 Derate above 25C 5.0 mW/C Total Device Dissipation @ PD Watt

1.634. bc546b_bc547a-b-c_bc548b-c.pdf Size:72K _onsemi

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BC546B, BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC546 65 3 BC547 45 EMITTER BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 TO-92 Emitter - Base Voltage VEBO 6.0 Vdc CASE 29 ST

1.635. 2sc5658m3.pdf Size:125K _onsemi

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2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is http://onsemi.com designed for low power surface mount applications, where board space is at a premium. NPN GENERAL Features PURPOSE AMPLIFIER Reduces Board Space TRANSISTORS H

1.636. nthc5513.pdf Size:80K _onsemi

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NTHC5513 Power MOSFET 20 V, +3.9 A / -3.0 A, Complementary ChipFETt Features Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Featuring Complementary Pair V(BR)DSS RDS(on) TYP ID MAX ChipFET Package Provides Great Thermal Characteristics Similar to 60 mW @ 4.5 V N-Channel Larger Packages 3.9 A 20

1.637. umc2nt1g_umc3nt1g_umc5nt1g.pdf Size:158K _onsemi

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UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias 31 2 Resistor Network R1 R2 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resis

1.638. 2sc5583.pdf Size:46K _panasonic

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Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C

1.639. 2sc5379_e.pdf Size:44K _panasonic

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Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter

1.640. 2sc5546.pdf Size:37K _panasonic

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Power Transistors 2SC5546 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Absolute Maximum Ratings TC = 25C 5.

1.641. 2sc5407.pdf Size:36K _panasonic

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Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.642. 2sc5473.pdf Size:34K _panasonic

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Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic inse

1.643. 2sc5515.pdf Size:35K _panasonic

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Power Transistors 2SC5515 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.644. 2sc5657.pdf Size:70K _panasonic

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1.645. 2sc5216_e.pdf Size:39K _panasonic

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Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 t

1.646. 2sc5244.pdf Size:36K _panasonic

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Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (TC=25?C) 1.0

1.647. 2sc5474.pdf Size:34K _panasonic

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Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and automati

1.648. 2sa2140_2sc5993.pdf Size:79K _panasonic

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Product News Delivering high breakdown voltage plus high frequency characteristics. High-fT Transistors 2SA2140/2SC5993 Overview 2SA2140/2SC5993 high-fT transistors deliver a typical fT Unit : mm value of 100MHz or higher at VCEO of 180V while featuring high-speed switching and low-saturation voltage characteristics. Making use of these transistors assists the production of power savi

1.649. 2sc5654.pdf Size:36K _panasonic

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Transistors 2SC5654 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.15+0.10 0.3+0.1 0.05 0.0 Complementary to 2SA2028 3 Features Low collector to emitter saturation voltage VCE(sat) 1 2 S-mini type package, allowing downsizing and thinning of the (0.65) (0.65) equipment and automatic insertion through the tape packing 1.30.1 2.00.2 Absolute Maximum Rat

1.650. 2sc5419.pdf Size:39K _panasonic

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Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings

1.651. 2sc5457.pdf Size:37K _panasonic

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Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit: mm 6.5 0.1 2.3 0.1 5.3 0.1 For high breakdown voltage high-speed switching 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 High-speed switching 0.5 0.1 0.75 0.1 High collector to base voltage VCBO 2.3 0.1 4.6 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current t

1.652. 2sc5935.pdf Size:71K _panasonic

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Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification Unit: mm 4.60.2 For TV vertical deflection output 9.90.3 2.90.2 Features ? 3.20.1 Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: 5 kV Full-pack package which can be installed to the heat sink with one screw. 1.40.2 2.60.

1.653. 2sc5418.pdf Size:37K _panasonic

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Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.654. 2sc5739.pdf Size:79K _panasonic

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Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs ? 3.20.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwar

1.655. 2sc5931.pdf Size:67K _panasonic

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Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 700 V High speed switching: tf < 200 ns Wide safe operation area 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.45

1.656. 2sc5840.pdf Size:79K _panasonic

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Power Transistors 2SC5840 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwa

1.657. 2sc5104.pdf Size:62K _panasonic

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Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08 0.5 N type pack

1.658. 2sc5841.pdf Size:78K _panasonic

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Power Transistors 2SC5841 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 C 1.0 High-speed switching (tstg: storage time/tf: fall time is short) 1.480.2 2.250.2 Low collector-emitter saturation voltage VCE(sat) 0.650.1 Super

1.659. 2sc5514.pdf Size:35K _panasonic

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Power Transistors 2SC5514 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.660. 2sc5412.pdf Size:37K _panasonic

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Power Transistors 2SC5412 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.661. 2sc5363_e.pdf Size:40K _panasonic

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Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter

1.662. 2sc5378.pdf Size:31K _panasonic

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Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

1.663. 2sc5393.pdf Size:34K _panasonic

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Power Transistors 2SC5393 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching ? 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si

1.664. 2sc5019_e.pdf Size:41K _panasonic

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Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5 0.1 3.0

1.665. 2sc5406.pdf Size:37K _panasonic

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Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.

1.666. 2sc5905.pdf Size:94K _panasonic

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Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 700 V High-speed switching: tf < 200 ns Wide safe operation area 5? 5? (4.0) 5? 2.00.2 Absolute Maximum Ratings TC = 25C 1.10.1 0.70.1 Parameter Symbol Rating Unit 5.4

1.667. 2sc5896.pdf Size:61K _panasonic

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Power Transistors 2SC5896 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwa

1.668. 2sc5592.pdf Size:50K _panasonic

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Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter 0.40+0.10 0.05 0.16+0.10 0.06 For various driver circuits 3 Features 1 2 Low collector to emitter saturation voltage VCE(sat) , large current (0.95) (0.95) capacitance 1.90.1 High-speed switching 2.90+0.20 0.05 Mini type 3-pin package, allowing downsizing and thinning of the 10 equi

1.669. 2sc5622.pdf Size:57K _panasonic

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Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: 1 500 V High-speed switching 5? Wide area of safe operation (ASO) 5? (4.0) 5? 2.00.2 Absolute Maximum Ratings TC = 25C 1.10.1 0.70.1 Parameter Symbol Rating Unit 5.450.3 Collector to base vol

1.670. 2sc5423.pdf Size:30K _panasonic

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Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.671. 2sc5895.pdf Size:54K _panasonic

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Power Transistors 2SC5895 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs Industrial equipments such as DC-DC converters ? 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwa

1.672. 2sc5518.pdf Size:35K _panasonic

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Power Transistors 2SC5518 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.673. 2sc5725.pdf Size:57K _panasonic

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Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25C 10? Parameter

1.674. 2sc5270.pdf Size:35K _panasonic

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Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.

1.675. 2sc5018.pdf Size:36K _panasonic

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Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base

1.676. 2sc5912.pdf Size:78K _panasonic

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Power Transistors 2SC5912 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 500 V Wide safe operation area Built-in dumper diode 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.450.3 10.90.5 Collecto

1.677. 2sc5829.pdf Size:66K _panasonic

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Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm Features 3 2 Allowing the small current and low voltage operation High transition frequency fT 1 Suitable for high-density mounting and downsizing of the equip- 0.39+0.01 1.000.05 -0.03 ment for Ultraminiature leadless package 0.6 mm ? 1.0 mm (height 0.39 mm) 0.250.05 0.250.05 1 Abs

1.678. 2sc5946.pdf Size:159K _panasonic

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?????? 2SC5946 ????NPN???????????? ???????????? Unit : mm 0.33+0.05 0.10+0.05 0.02 0.02 3 ??? ??????????fT ??? SSS ??????????????????????? ???????????? 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.800.05 ?????? Ta = 25C 1.200.05 5? ?? ?? ?? ?? ???????????(E ???) VCBO 30 V ???? ???????(B???) VCEO 20 V ? ???????????(C ???) VEBO 3 V ?????? IC 50 mA 1 : Base 2 : Emitter ???

1.679. 2sc5813.pdf Size:81K _panasonic

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Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25C 10? Parameter

1.680. 2sc5294.pdf Size:37K _panasonic

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Power Transistors 2SC5294, 2SC5294A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (Ta=25?C) 0.7 0.

1.681. 2sc5190_e.pdf Size:40K _panasonic

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Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

1.682. 2sc5474_e.pdf Size:37K _panasonic

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Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and automati

1.683. 2sc5063.pdf Size:62K _panasonic

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Power Transistors 2SC5063 Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 N type package enabling direct soldering of the radiating fin to 5.08 0.5 the pr

1.684. 2sc5913.pdf Size:78K _panasonic

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Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 500 V Wide safe operation area Built-in dumper diode 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.450.3 10.9

1.685. 2sc5846.pdf Size:70K _panasonic

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Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.800.05 1.200.05 Absolut

1.686. 2sc5190.pdf Size:37K _panasonic

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Transistor 2SC5190 Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. Small collector output capacitance Cob. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=

1.687. 2sc5885.pdf Size:64K _panasonic

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Power Transistors 2SC5885 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 9.90.3 4.60.2 2.90.2 Features High breakdown voltage: VCBO ? 1 500 V ?3.20.1 Wide safe operation area Built-in dumper diode 0.760.06 1.250.1 1.450.15 2.60.1 1.20.15 Absolute Maximum Ratings TC = 25C 0.70.1 0.750.1 Parameter Symbol Rating

1.688. 2sc5686.pdf Size:75K _panasonic

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Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 2 000 V High-speed switching: tf < 200 ns Wide safe operation area 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.4

1.689. 2sc5572.pdf Size:71K _panasonic

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1.690. 2sc5380.pdf Size:38K _panasonic

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Power Transistors 2SC5380, 2SC5380A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.

1.691. 2sc5383.pdf Size:46K _panasonic

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Power Transistors 2SC5583 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C

1.692. 2sc5037.pdf Size:78K _panasonic

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Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which ca

1.693. 2sc5335.pdf Size:38K _panasonic

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Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 C

1.694. 2sc5519.pdf Size:47K _panasonic

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Power Transistors 2SC5519 2SC5519 2SC5519 2SC5519 2SC5519 Silicon NPN triple diffusion mesa type Unit: mm 15.50.5 3.00.3 For horizontal deflection output ? 3.20.1 5? 5? Features High breakdown voltage, and high reliability through the use of a 5? glass passivation layer 5? High-speed switching (4.0) 5? 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Ab

1.695. 2sc5034.pdf Size:59K _panasonic

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Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 9.9 0.3 2.9 0.2 Features ? 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absolute Maximum

1.696. 2sc5632.pdf Size:49K _panasonic

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Transistors 2SC5632 Silicon NPN epitaxial planar type For high-frequency amplification and switching Unit: mm 0.15+0.10 0.3+0.1 0.05 0.0 Features 3 High transition frequency fT S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.65) (0.65) 1.30.1 2.00.2 Absolute Maximum Ratings Ta = 25C 10? Parameter Sym

1.697. 2sc5788.pdf Size:73K _panasonic

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Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments 10.00.2 5.00.1 1.00.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.20.1 C 1.0 High-speed switching (tstg: storage time/tf: fall time is short) 1.480.2 2.250.2 Low collector to emitter saturation voltage VCE(sat) 0.650.1 Sup

1.698. 2sc5926.pdf Size:57K _panasonic

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Power Transistors 2SC5926 Silicon NPN triple diffusion planar type Unit: mm For power amplification 10.00.2 5.00.1 1.00.2 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) 1.20.1 Allowing supply with the radial taping C 1.0 1.480.2 2.250.2 0.650.1 Absolute Maximum Ratings TC = 25C 0

1.699. 2sc5993.pdf Size:73K _panasonic

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Power Transistors 2SC5993 Silicon NPN epitaxial planar type Unit: mm 4.60.2 For power amplification 9.90.3 2.90.2 For TV VM circuit ? 3.20.1 Features Satisfactory linearity of forward current transfer ratio hFE High transition frequency (fT) 1.40.2 Full-pack package which can be installed to the heat sink with one 2.60.1 1.60.2 screw. 0.80.1 0.550.15 Absolute M

1.700. 2sc5505.pdf Size:72K _panasonic

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Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.60.2 9.90.3 2.90.2 Features ? 3.20.1 High-speed switching TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 1.40.2 2.60.1 1.60.2 Absolute Maximum Ratings TC = 25C 0.80.1 0.550.15 Parameter Symbol Rating Unit Collector-base voltage (Emitter ope

1.701. 2sc5363.pdf Size:37K _panasonic

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Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter

1.702. 2sc5032.pdf Size:59K _panasonic

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Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 9.9 0.3 2.9 0.2 Features ? 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1 Full-pack package with outstanding insulation, which

1.703. 2sc5335_e.pdf Size:43K _panasonic

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Transistor 2SC5335(Tentative) Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 C

1.704. 2sc5779.pdf Size:78K _panasonic

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Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm 4.60.2 Power supply for Audio & Visual equipments 9.90.3 2.90.2 such as TVs and VCRs ? 3.20.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short) 1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.1 1.60.2 Superior forwar

1.705. 2sc5145.pdf Size:65K _panasonic

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Power Transistors 2SC5145 Silicon NPN triple diffusion planar type Unit: mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features High-speed switching High collector to base voltage VCBO 1.5max. 1.1max. Wide area of safe operation (ASO) N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit board

1.706. 2sc5019.pdf Size:38K _panasonic

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Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low noise figure NF. High gain. 45 High transition frequency fT. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and automatic insertion through the tape packing and the maga- 0.4 0.04 0.5 0.08 zine packing. 1.5 0.1 3.0

1.707. 2sc5838.pdf Size:79K _panasonic

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Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm ? 1.0 mm (height 0.39 mm) 0.39+0.01 1.000.05 -0.03 0.250.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit 3 2 0.650.0

1.708. 2sc5939.pdf Size:80K _panasonic

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Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High transition frequency fT Small collector output capacitance (Common base, input open cir- cuited) Cob and reverse transfer capacitance (Common base) Crb 0.23+0.05 1 2 0.02 SSS-Mini type package, allowing downsizing o

1.709. 2sc5884.pdf Size:75K _panasonic

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Power Transistors 2SC5884 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 9.90.3 4.60.2 2.90.2 Features High breakdown voltage: VCBO ? 1 500 V ?3.20.1 Wide safe operation area Built-in dumper diode 0.760.06 1.250.1 1.450.15 2.60.1 1.20.15 Absolute Maximum Ratings TC = 25C 0.70.1 0.750.1 Parameter Symbol Rating Unit Colle

1.710. 2sc5473_e.pdf Size:38K _panasonic

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Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic inse

1.711. 2sc5863.pdf Size:83K _panasonic

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Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO 1 2 High transition frequency fT (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25C 10? Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 300 V 1:

1.712. 2sc5513.pdf Size:35K _panasonic

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Power Transistors 2SC5513 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.713. 2sc5609.pdf Size:45K _panasonic

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Transistors 2SC5609 Silicon PNP epitaxial planer type Unit: mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SA2021 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.800.05 equipment and automatic insertion through the tape packing 1.200.05 5? A

1.714. 2sc5904.pdf Size:78K _panasonic

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Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage (VCBO ? 1 700 V) High-speed switching (tf < 200 nsec) Wide safe operation area 5? 5? (4.0) 5? 2.00.2 Absolute Maximum Ratings TC = 25C 1.10.1 0.70.1 Parameter Symbol Rating

1.715. 2sc5553.pdf Size:55K _panasonic

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Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Absolute Maximum Ratings TC = 25C 5.

1.716. 2sc5556.pdf Size:65K _panasonic

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Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low noise figure NF High transition frequency fT Mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine packing (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolu

1.717. 2sc5077.pdf Size:84K _panasonic

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Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which ca

1.718. 2sc5580.pdf Size:43K _panasonic

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Transistors 2SC5580 Silicon NPN epitaxial planer type Unit: mm For high-frequency oscillation / switching 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT S-mini type package, allowing downsizing of the equipment and 1 2 automatic insertion through the tape packing and the magazine (0.65) (0.65) packing. 1.30.1 2.00.2 10 Absolute Maximum Ratings Ta =

1.719. 2sc5243.pdf Size:46K _panasonic

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Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 1.5 Wide area of safe operation (ASO) 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (TC=25?C) 1.0 0.2 Param

1.720. 2sc5597.pdf Size:54K _panasonic

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Power Transistors 2SC5597 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C

1.721. 2sc5809.pdf Size:78K _panasonic

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Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm 4.60.2 For high breakdown voltage high-speed switching 9.90.3 2.90.2 ? 3.20.1 Features High-speed switching (Fall time tf is short) High collector-base voltage (Emitter open) VCBO Low collector-emitter saturation voltage VCE(sat) TO-220D built-in: Excellent package with withstand voltage 5 kV 1.

1.722. 2sc5216.pdf Size:35K _panasonic

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Transistor 2SC5216 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 t

1.723. 2sc5472_e.pdf Size:38K _panasonic

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Transistor 2SC5472 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 High gain of 8.2dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. 2 S-Mini type package, allowing downsizing of the equipment and automa

1.724. 2sc5902.pdf Size:78K _panasonic

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Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 700 V Wide safe operation area Built-in dumper diode 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.450.3 10.90.5 Collecto

1.725. 2sc5954.pdf Size:58K _panasonic

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Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit: mm 4.60.2 For power amplification with high forward current transfer ratio 9.90.3 2.90.2 ? 3.20.1 Features High forward current transfer ratio hFE which has satisfactory linearity. Low collector-emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw

1.726. 2sc5517.pdf Size:35K _panasonic

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Power Transistors 2SC5517 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.727. 2sc5346_e.pdf Size:41K _panasonic

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Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1982 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.65 max. Small collector output capacitance Cob. +0.1 Absolute Maximum Ratings (

1.728. 2sc5379.pdf Size:40K _panasonic

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Transistor 2SC5379 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 SS-Mini type package, allowing downsizing of the equipment 2 and automatic insertion through the tape packing. Absolute Maximum Ratings (Ta=25?C) 0.2 0.1 Parameter

1.729. 2sc5839.pdf Size:80K _panasonic

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Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit: mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.000.05 -0.03 0.6 mm ? 1.0 mm (height 0.39 mm) 0.250.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Para

1.730. 2sc5036.pdf Size:60K _panasonic

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Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which ca

1.731. 2sc5478.pdf Size:35K _panasonic

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Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.732. 2sc5552.pdf Size:46K _panasonic

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Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5 5 Features High breakdown voltage, and high reliability through the use of a glass passivation layer 5 5 High-speed switching (4.0) 5 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Absolute Maximum Ratings TC = 25C 5.

1.733. 2sc5909.pdf Size:78K _panasonic

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Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: VCBO ? 1 500 V High-speed switching: tf < 200 ns Wide safe operation area 5? 5? (4.0) 5? 2.00.2 1.10.1 Absolute Maximum Ratings TC = 25C 0.70.1 Parameter Symbol Rating Unit 5.450.3 10.90.5

1.734. 2sc5845.pdf Size:81K _panasonic

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Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit: mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- 1 2 ing (0.95) (0.95) 1.90.1 2.90+0.20 0.05 Absolute Maximum Ratings

1.735. 2sc5405.pdf Size:37K _panasonic

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Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm Features 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching High forward current transfer ratio hFE which has satisfactory ? 3.2 0.1 linearity Dielectric breakdown voltage of the package: > 5kV 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (TC=25?C) 1

1.736. 2sc5026.pdf Size:37K _panasonic

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Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga-

1.737. 2sc5440.pdf Size:60K _panasonic

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Power Transistors 2SC5440 2SC5440 2SC5440 2SC5440 2SC5440 Silicon NPN triple diffusion mesa type Unit: mm 15.50.5 3.00.3 ? 3.20.1 For horizontal deflection output 5? 5? Features High breakdown voltage, and high reliability through the use of a 5? glass passivation layer 5? (4.0) High-speed switching 5? 2.00.2 Wide area of safe operation (ASO) 1.10.1 0.70.1 Ab

1.738. 2sc5018_e.pdf Size:41K _panasonic

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Transistor 2SC5018 Silicon NPN triple diffusion planer type For high breakdown voltage high-speed switching Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to base voltage VCBO. High emitter to base voltage VEBO. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 Collector to base

1.739. 2sc5472.pdf Size:52K _panasonic

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Transistors 2SC5472 Silicon NPN epitaxial planer type Unit: mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT High gain of 8.2 dB and low noise of 1.8 dB at 3 V 1 2 Optimum for RF amplification of a portable telephone and pager (0.65) (0.65) S-mini type package, allowing downsizing of the equipment a

1.740. 2sc5127.pdf Size:60K _panasonic

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Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching ? 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1

1.741. 2sc5591.pdf Size:49K _panasonic

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Power Transistors 2SC5591 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 15.50.5 3.00.3 ? 3.20.1 5? 5? Features High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle 5? High-speed switching: tf < 0.2 s 5? (4.0) Low Collector to emitter saturation voltage: VCE(sat) < 3 V 5? 2.00.2 Wide area of safe o

1.742. 2sc5346.pdf Size:36K _panasonic

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Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1982 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. 0.65 max. Small collector output capacitance Cob. +0.1 Absolute Maximum Ratings (

1.743. 2sc5121.pdf Size:38K _panasonic

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Power Transistors 2SC5121 Silicon NPN triple diffusion planar type For general amplification Unit: mm +0.5 8.0 0.1 3.2 0.2 Features High collector to base voltage VCBO ? 3.16 0.1 High collector to emitter VCEO Small collector output capacitance Cob TO-126 package, which is fitted to a heat sink without any insu- lation parts Absolute Maximum Ratings (TC=25?C) 0.5 0.1 Parameter

1.744. 2sc5035.pdf Size:62K _panasonic

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Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm Features 4.6 0.2 High-speed switching 9.9 0.3 2.9 0.2 ? 3.2 0.1 High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2

1.745. 2sc5584.pdf Size:45K _panasonic

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Power Transistors 2SC5584 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output 20.00.5 5.00.3 (3.0) ? 3.30.2 Features High breakdown voltage, and high reliability through the use of a glass passivation layer (1.5) High-speed switching Wide area of safe operation (ASO) (1.5) 2.00.3 2.70.3 3.00.3 1.00.2 Absolute Maximum Ratings TC = 25C

1.746. 2sc5516.pdf Size:35K _panasonic

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Power Transistors 2SC5516 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5 0.5 3.0 0.3 ? 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25?C) 0.7 0.1 Paramet

1.747. 2sc5026_e.pdf Size:41K _panasonic

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Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SA1890 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga-

1.748. 2sc5378_e.pdf Size:35K _panasonic

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Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1 0.1 Features 0.425 1.25 0.1 0.425 Low noise figure NF. High gain. 1 High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

1.749. 2sc5128.pdf Size:59K _panasonic

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Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6 0.2 9.9 0.3 2.9 0.2 Features ? 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be in- 2.6 0.1 stalled to the heat sink with one screw 1.2 0.15

1.750. 2sc5419_e.pdf Size:44K _panasonic

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Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25?C) 0.450.05 2.5 0.5 2.5 0.5 Parameter Symbol Ratings

1.751. 2sc5295.pdf Size:43K _panasonic

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Transistors 2SC5295 Silicon NPN epitaxial planer type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 0.15+0.1 0.05 0.05 3 Features High transition frequency fT Low collector output capacitance Cob SS-mini type package, allowing downsizing of the equipment and 1 2 (0.5) (0.5) automatic insertion through the tape packing. 1.00.1 1.60.1 5 Absolute Maximum Rating

1.752. 2sc5223.pdf Size:42K _panasonic

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Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm 6.5 0.1 2.3 0.1 5.3 0.1 4.35 0.1 For high-speed switching 0.5 0.1 1.0 0.1 Features 0.1 0.05 0.93 0.1 0.5 0.1 High collector to base voltage VCBO 0.75 0.1 2.3 0.1 High collector to emitter VCEO 4.6 0.1 1:Base 2:Collector 3:Emitter 1 2 3 Absolute Maximum Ratings (Ta=25?C) U Type Package

1.753. 2sc5027e.pdf Size:198K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T TO-220 B C E Tube 2SC5027EL-x-TF2-T 2SC5027EL-x-TF2-T TO-220F2 B C E Tube 2SC5027EL-x-T

1.754. 2sc5353.pdf Size:271K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 1 TO-126 TO-126C DESCRIPTION Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications 1 1 TO-220 TO-220F FEATURES * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage: VCEO = 700V 1 TO-220F1

1.755. 2sc5200.pdf Size:171K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS ? FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC5200-x-T3L-T 2SC5200-x-T3L-T TO-3PL B C E Tube www.uniso

1.756. 2sc5027.pdf Size:49K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY . 1 FEATURES TO-220 * High Voltage (VCEO = 800V) * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: 2SC5027L ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 3 2SC5027-x-TA3-T 2SC5027L-x-TA3-T TO-220

1.757. 2sc5569.pdf Size:170K _utc

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UTC 2SC5569 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. 1 *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=

1.758. 2sc5765.pdf Size:182K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC

1.759. 2sc5889.pdf Size:131K _utc

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UTC 2SC5889 NPN EPITAXIAL SILICON TRANSISTOR DC/DC CONVERTER APPLICATIONS FEATURES *Large current capacitance. *Low collector-emitter saturation voltage. *High-speed switching 1 *High allowable power dissipation. APPLICATIONS * relay drivers, lamp drivers, motor drivers, strobes. TO-92SP 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS (Ta=25?) PARAMETER SYMBOL RATI

1.760. 2sc5353b.pdf Size:251K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2SC5353B NPN SILICON TRANSISTOR HIGH VOLTAGE NPN 1 1 TRANSISTOR TO-126 TO-126C DESCRIPTION 1 1 TO-220 TO-220F Switching Regulator and High Voltage Switching Applications High-Speed DC-DC Converter Applications. 1 1 FEATURES TO-220F1 TO-251 * Excellent switching times: tR = 0.7?s(MAX), tF = 0.5?s (MAX) * High collectors breakdown voltage:

1.761. 2sc5343e.pdf Size:243K _auk

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2SC5343E NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features 3 • Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 2 • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980E SOT-523 Ordering Information Type NO. Marking Package Code C ? ? 2SC5343E SOT-523 ? ? ? ?Device Code ?hFE Rank

1.762. 2sc5343m.pdf Size:169K _auk

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2SC5343M NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features • Low collector saturation voltage : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M TO-92M Ordering Information Type NO. Marking Package Code 2SC5343M 5343 TO-92M Absolute maximum ratings Ta=25°C Characteris

1.763. 2sc5343.pdf Size:225K _auk

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2SC5343 NPN Silicon Transistor Description PIN Connection • General small signal amplifier C B Features • Low collector saturation voltage E : VCE(sat)=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) TO-92 • Complementary pair with 2SA1980 Ordering Information Type NO. Marking Package Code 2SC5343 C5343 TO-92 Absolute maximum ratings Ta=25°C Charac

1.764. sbc548.pdf Size:199K _auk

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SBC548 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features • High voltage : VCEO=30V E • Complementary pair with SBC558 TO-92 Ordering Information Type NO. Marking Package Code SBC548 SBC548 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage

1.765. 2sc5344u.pdf Size:256K _auk

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2SC5344U NPN Silicon Transistor Description PIN Connection • Audio power amplifier application Features 3 • High hFE : hFE=100~320 • Complementary pair with 2SA1981U 1 2 Ordering Information SOT-323 Type NO. Marking Package Code F ? ? 2SC5344U SOT-323 ? ? ? ?Device Code ?hFE Rank ?Year&Week Code Absolute maximum ratings (Ta=25°C) Characteristic Sy

1.766. sbc557.pdf Size:94K _auk

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SBC557 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with SBC547 Ordering Information Type NO. Marking Package Code SBC557 SBC557 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

1.767. sbc558.pdf Size:94K _auk

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SBC558 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-30V • Complementary pair with SBC548 Ordering Information Type NO. Marking Package Code SBC558 SBC558 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

1.768. sbc546.pdf Size:199K _auk

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SBC546 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features • High voltage : VCEO=55V E • Complementary pair with SBC556 TO-92 Ordering Information Type NO. Marking Package Code SBC546 SBC546 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage

1.769. 2sc5344s.pdf Size:279K _auk

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2SC5344S NPN Silicon Transistor Description • Audio power amplifier application PIN Connection Features • High hFE : hFE=100~320 • Complementary pair with 2SA1981S C B Ordering Information Type No. Marking Package Code E SOT-23 FA ? ? 2SC5344S SOT-23 ? ? ? ?Device Code ? hFE Rank ? Year&Week Code Absolute maximum ratings (Ta=25°C) Characteristic Symbol R

1.770. sbc547.pdf Size:199K _auk

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SBC547 NPN Silicon Transistor Descriptions PIN Connection • General purpose application C • Switching application B Features • High voltage : VCEO=45V E • Complementary pair with SBC557 TO-92 Ordering Information Type NO. Marking Package Code SBC547 SBC547 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage

1.771. stc503f.pdf Size:394K _auk

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STC503F NPN Silicon Transistor PIN Connection Applications • Power amplifier application • High current switching application Features • Power Transistor General Purpose application • Low saturation voltage : VCE(sat)=0.4V Typ. SOT-89 • High Voltage : VCEO=65V Min. Ordering Information Type NO. Marking Package Code C503 STC503F SOT-89 YWW Absolute Maxim

1.772. 2sc5342m.pdf Size:168K _auk

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2SC5342M NPN Silicon Transistor Description PIN Connection • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979M TO-92M Ordering Information Type NO. Marking Package Code 2SC5342M 5342 TO-92M Absolute maximum ratings (Ta=25°C) Characterist

1.773. sbc556.pdf Size:93K _auk

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SBC556 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • General purpose application • Switching application Features • High voltage : VCEO=-55V • Complementary pair with SBC546 Ordering Information Type NO. Marking Package Code SBC556 SBC556 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1

1.774. 2sc5343uf.pdf Size:142K _auk

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2SC5343UF Semiconductor Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980UF Ordering Information Type NO. Marking Package Code D 2SC5343UF SOT-323F ? ? ? ?Device Code ?hFE Rank ?Year&Week Co

1.775. 2sc5342.pdf Size:223K _auk

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2SC5342 NPN Silicon Transistor Description PIN Connection • Medium power amplifier C Features B • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation E • Complementary pair with 2SA1979 TO-92 Ordering Information Type NO. Marking Package Code 2SC5342 C5342 TO-92 Absolute maximum ratings (Ta=25°C) Charac

1.776. 2sc5345m.pdf Size:199K _auk

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2SC5345M NPN Silicon Transistor Description PIN Connection • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain TO-92M • Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345M C5345 TO-

1.777. 2sc5342uf.pdf Size:212K _auk

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2SC5342UF NPN Silicon Transistor Description PIN Connection • Medium power amplifier Features 3 • Large collector current : IC=500mA 1 • Low collector saturation voltage enabling low-voltage operation 2 • Complementary pair with 2SA1979UF SOT-323F Ordering Information Type NO. Marking Package Code 2SC5342UF B SOT-323F ? ? ? ?Device Code ?hFE Rank ?Year&

1.778. stc5551f.pdf Size:317K _auk

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STC5551F NPN Silicon Transistor PIN Connection Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage SOT-89 : VCE(sat)=0.5V(MAX.) Ordering Information Type No. Marking Package Code N51 STC5551F SOT-89 ?YWW N51: DEVICE CODE, ? : hFE rank,

1.779. 2sc5342u.pdf Size:188K _auk

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2SC5342U NPN Silicon Transistor Description PIN Connection • Medium power amplifier Features C • Large collector current : IC=500mA B • Low collector saturation voltage enabling low-voltage operation E • Complementary pair with 2SA1979U SOT-323 Ordering Information Type NO. Marking Package Code 2SC5342U B SOT-323 : hFE rank Absolute maximum ratings (Ta=

1.780. 2sc5345uf.pdf Size:247K _auk

C5
C5

2SC5345UF NPN Silicon Transistor Description PIN Connection • RF amplifier Features 3 • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 • Low output capacitance : 2 Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response SOT-323F Ordering Information Type NO. Marking Package Code E

1.781. 2sc5342sf.pdf Size:249K _auk

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2SC5342SF NPN Silicon Transistor Description PIN Connection • Medium power amplifier 3 Features • Large collector current : IC=500mA 1 • Low collector saturation voltage enabling low-voltage operation 2 • Complementary pair with 2SA1979SF SOT-23F Ordering Information Type NO. Marking Package Code BA 2SC5342SF SOT-23F ? ? ? ?Device Code ?hFE Rank ?Ye

1.782. 2sc5343ef.pdf Size:267K _auk

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2SC5343EF NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features 3 • Low collector saturation voltage : VCE(sat)=0.25V(Max.) 1 • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980EF 2 SOT-523F Ordering Information Type NO. Marking Package Code C ? ? 2SC5343EF SOT-523F ? ? ? ?Device Code ?hFE Ran

1.783. 2sc5345ef.pdf Size:224K _auk

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2SC5345EF Semiconductor Semiconductor NPN Silicon Transistor Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345E Z

1.784. 2sc5343sf.pdf Size:274K _auk

C5
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2SC5343SF NPN Silicon Transistor Description PIN Connection • General small signal amplifier 3 Features • Low collector saturation voltage : 1 VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) 2 • Complementary pair with 2SA1980SF SOT-23F Ordering Information Type NO. Marking Package Code DA ? ? 2SC5343SF SOT-23F ? ? ? ? Device Code ? hFE Ran

1.785. 2sc5345.pdf Size:259K _auk

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2SC5345 NPN Silicon Transistor Description PIN Connection • RF amplifier C Features • High current transition frequency B fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : E Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain TO-92 • Excellent noise response Ordering Information Type NO. Marking Package Code 2SC5345

1.786. 2sc5343s.pdf Size:301K _auk

C5
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2SC5343S NPN Silicon Transistor GENERAL SMALL SIGNAL AMPLIFIER Features PIN Connection • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980S C B Ordering Information E Type No. Marking Package Code SOT-23 DA ? ? 2SC5343S SOT-23 ? ? ? ? Device Code ? hFE Rank ? Year&Week Code Absolute Ma

1.787. 2sc5343u.pdf Size:263K _auk

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C5

2SC5343U NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features 3 • Low collector saturation voltage : VCE=0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) 1 2 • Complementary pair with 2SA1980U Ordering Information SOT-323 Type NO. Marking Package Code D ? ? 2SC5343U SOT-323 ? ? ? ?Device Code ?hFE Rank ?Year&Wee

1.788. 2sc5344.pdf Size:218K _auk

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2SC5344 NPN Silicon Transistor Description PIN Connection • Audio power amplifier application C B Features • High hFE : hFE=100~320 E • Complementary pair with 2SA1981 TO-92 Ordering Information Type NO. Marking Package Code 2SC5344 C5344 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 35 V Collector-

1.789. stc503d.pdf Size:378K _auk

C5
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STC503D NPN Silicon Transistor Applications PIN Connection • Power amplifier application • High current switching application Features • Power Transistor General Purpose application • Low saturation voltage : VCE(sat)=0.4V Typ. • High Voltage : VCEO=65V Min. TO-252 Ordering Information Type NO. Marking Package Code STC503D STC503 TO-252 Absolute Maximum Rat

1.790. 2sc5345sf.pdf Size:308K _auk

C5
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2SC5345SF NPN Silicon Transistor Description PIN Connection • RF amplifier Features 3 • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] 1 • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 2 SOT-23F • Low base time constant and high gain • Excellent noise response Ordering Information Type NO. Marking Package Code Z ?

1.791. 2sc5342s.pdf Size:260K _auk

C5
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2SC5342S NPN Silicon Transistor MEDIUM POWER AMPLIFIER Features PIN Connection • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with 2SA1979S 3 1 2 Ordering Information Type No. Marking Package Code BA ? ? 2SC5342S SOT-23 SOT-23 ? ? ? ?Device Code ?hFE Rank ?Year&Week Code Absolute m

1.792. 2sc5631.pdf Size:75K _hitachi

C5
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2SC5631 Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier ADE-208-981A (Z) 2nd. Edition Mar. 2001 Features High gain bandwidth product fT = 11 GHz typ. High power gain and low noise figure ; PG = 10 dB typ. , NF = 1.2 dB typ. at f = 900 MHz Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector Note: Marking is JR. 2SC5631 Absolute Maximum Ratings (Ta = 2

1.793. 2sc5759.pdf Size:92K _hitachi

C5
C5

2SC5759 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1389 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.6 GHz typ. High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortion Output IP3 (800 MHz) = 36 dBm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3. Base 4.

1.794. 2sc5079.pdf Size:25K _hitachi

C5
C5

2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5079 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector

1.795. 2sc5594.pdf Size:53K _hitachi

C5
C5

2SC5594 Silicon NPN Epitaxial High Frequency Low Noise Amplifier ADE-208-798 (Z) 1st. Edition Nov. 2000 Features High gain bandwidth product fT = 24 GHz typ. High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz Outline CMPAK-4 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is XP-. 2SC5594 Absolute Maximum Ratings (T

1.796. 2sc5555.pdf Size:46K _hitachi

C5
C5

2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is ZD-. 2SC5555 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO

1.797. 2sc5448.pdf Size:45K _hitachi

C5
C5

2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-577 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO3PFM Outline TO3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5448 Absolute Maximum Ratings (Ta = 25C) Item Symbol R

1.798. 2sc5700.pdf Size:102K _hitachi

C5
C5

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WB. 2SC5700 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Un

1.799. 2sc5629.pdf Size:68K _hitachi

C5
C5

2SC5629 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-980 (Z) 1st. Edition Nov. 2000 Features Super compact package; (1.6 ? 0.8 ? 0.7mm) High power gain and low noise figure; (PG = 9 dB typ., NF = 1.1 dB typ., at f = 900MHz, VCE = 1 V) Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is XZ-. 2SC5629 Absolute Maximum Ratings (Ta = 2

1.800. 2sc5025.pdf Size:11K _hitachi

C5
C5

2SC5025 Silicon NPN Epitaxial Application TO126FM High frequency amplifier Features Excellent high frequency characteristics fT = 1.2 GHz typ Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit Collector to base voltage VCBO 30 V

1.801. 2sc5219.pdf Size:35K _hitachi

C5
C5

2SC5219 Silicon NPN Triple Diffused Planar Application Character display horizontal deflection output Features High breakdown voltage VCES = 1700 V High speed switching tf = 0.15 sec (typ) Built-in damper diode type Isolated package TO-3PFM Outline TO-3PFM 2 1 1. Base ID 2. Collector 3. Emitter 1 3 2 3 2SC5219 Absolute Maximum Ratings (Ta = 25C) Item Symbol

1.802. 2sc5702.pdf Size:109K _hitachi

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C5

2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 8 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is ZS-. 2SC5702 Absolute Maximum Ratings (Ta = 25 C) I

1.803. 2sc5051.pdf Size:24K _hitachi

C5
C5

2SC5051 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5051 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to e

1.804. 2sc5140.pdf Size:60K _hitachi

C5
C5

2SC5140 Silicon NPN Epitaxial ADE-208-227A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YH. Attention: This device is very sensitive to electro static d

1.805. 2sc5544.pdf Size:46K _hitachi

C5
C5

2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-691 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YZ-. 2SC5544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO

1.806. 2sc5081.pdf Size:25K _hitachi

C5
C5

2SC5081 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5081 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15

1.807. 2sc5078.pdf Size:45K _hitachi

C5
C5

2SC5078 Silicon NPN Epitaxial ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz Typ High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 4 2. Emitter 3. Base 4. Emitter 2SC5078 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector

1.808. 2sc5141.pdf Size:62K _hitachi

C5
C5

2SC5141 Silicon NPN Epitaxial ADE-208-228A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 5.8 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YN. Attention: This device is very sensitive to electro static

1.809. 2sc5449.pdf Size:45K _hitachi

C5
C5

2SC5449 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-578 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO3PFM Outline TO3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5449 Absolute Maximum Ratings (Ta = 25C) Item Symbol R

1.810. 2sc5207.pdf Size:69K _hitachi

C5
C5

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.811. 2sc5023.pdf Size:11K _hitachi

C5
C5

2SC5023 Silicon NPN Epitaxial Application TO126FM High frequency amplifier Features Excellent high frequency characteristics fT = 1000 MHz typ High breakdown voltage and low output capacitance 1 2 VCEO = 100 V, Cob = 4.5 pF typ 3 1. Emitter Suitable for wide band video amplifier 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25C) Item Symbol Rating Unit

1.812. 2sc5252.pdf Size:38K _hitachi

C5
C5

2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf ? 0.15 sec(typ.) Isolated package TO3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.813. 2sc5132.pdf Size:23K _hitachi

C5
C5

2SC5132A Silicon NPN Triple Diffused Planar Application TO3PFM (N) Character display horizontal deflection output Features High breakdown voltage VCES = 1500 V, IC = 8 A Builtin damper diode type Isolated package C TO-3PFM B 1. Base 2. Collector 1 3. Emitter 2 3 E Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.814. 2sc5251.pdf Size:35K _hitachi

C5
C5

2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.2 sec (typ) Isolated package TO-3PFM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector

1.815. 2sc5273.pdf Size:42K _hitachi

C5
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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.816. 2sc5247.pdf Size:64K _hitachi

C5
C5

2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz typ High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltag

1.817. 2sc5250.pdf Size:71K _hitachi

C5
C5

Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freetradezone.com, a service of Partminer, Inc. This Material Copyrighted By Its Respective Manufacturer Printed from www.freet

1.818. 2sc5218.pdf Size:46K _hitachi

C5
C5

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 9 GHz typ High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5218 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage

1.819. 2sc5628.pdf Size:69K _hitachi

C5
C5

2SC5628 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-979A (Z) 2nd. Edition April 2001 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) High power gain and low noise figure; (PG = 9 dB, NF = 1.1 dB typ, at f = 900 Mhz, VCE = 1 V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is XZ-. 2SC5628 Absolute Maximum Ratings (Ta = 25

1.820. 2sc535.pdf Size:54K _hitachi

C5
C5

2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC535 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100

1.821. 2sc5137.pdf Size:58K _hitachi

C5
C5

2SC5137 Silicon NPN Epitaxial ADE-208-224 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5137 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltag

1.822. 2sc5139.pdf Size:57K _hitachi

C5
C5

2SC5139 Silicon NPN Epitaxial ADE-208-226 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz typ High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5139 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage

1.823. 2sc5812.pdf Size:94K _hitachi

C5
C5

2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 1. Emitter 2 2. Base 3. Collector Note: Marking is WG. 2SC5812 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.824. 2sc5022.pdf Size:42K _hitachi

C5
C5

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

1.825. 2sc5849.pdf Size:87K _hitachi

C5
C5

2SC5849 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1469 (Z) Rev. 0 Nov. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WY. 2SC5849 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 6.0 V

1.826. 2sc5545.pdf Size:45K _hitachi

C5
C5

2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-746 (Z) 1st. Edition Jan. 1999 Features Excellent inter modulation characteristic High power gain and low noise figure ; PG=16dB typ. , NF=1.1dB typ. at f=900MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is ZS-. 2SC5545 Absolute Maximum Ratings (Ta = 25 C) Item Sy

1.827. 2sc5120.pdf Size:26K _hitachi

C5
C5

2SC5120 Silicon NPN Epitaxial Application TO126FM High frequency amplifier Features Excellent high frequency characteristics fT = 500 MHz typ High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

1.828. 2sc5225.pdf Size:29K _hitachi

C5
C5

2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features High voltage large current operation. VCEO = 80 V, IC = 300 mA High fT. fT = 1.4 GHz Small output capacitance. Cob = 3 pF 2SC5

1.829. 2sc5237.pdf Size:36K _hitachi

C5
C5

2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 400 MHz typ High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifier Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SC5237 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit C

1.830. 2sc5773.pdf Size:91K _hitachi

C5
C5

2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1391(Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.8 GHz typ. High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note: Marking is JR-. This data sheet contains tentative specifica

1.831. 2sc5136.pdf Size:58K _hitachi

C5
C5

2SC5136 Silicon NPN Epitaxial ADE-208-223 1st. Edition Application VHF/UHF wide band amplifier Features High gain bandwidth product fT = 3.8 GHz typ High gain, low noise figure PG = 11 dB typ, NF = 2.5 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5136 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage V

1.832. 2sc5390.pdf Size:30K _hitachi

C5
C5

2SC5390 Silicon NPN Epitaxial High Frequency Amplifier ADE-208-492 (Z) 1st. Edition December. 1996 Features Excellent high frequency characteristics fT = 1.4GHz (typ.) Low output capacitance Cob = 2.4 pF (typ.) Isolated package TO126FM Outline TO126FM 1 2 3 1. Emitter 2. Collector 3. Base 2SC5390 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collect

1.833. 2sc5049.pdf Size:24K _hitachi

C5
C5

2SC5049 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 10 GHz Typ High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5049 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to em

1.834. 2sc5543.pdf Size:46K _hitachi

C5
C5

2SC5543 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-690 (Z) 1st. Edition Nov. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YA-. 2SC5543 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO

1.835. 2sc5080.pdf Size:48K _hitachi

C5
C5

2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 13.5 GHz Typ High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 1. Collector 2. Emitter 4 3. Base 4. Emitter 2SC5080 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V

1.836. 2sc5447.pdf Size:46K _hitachi

C5
C5

2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO3PFM Outline TO3PFM C 2 1 B 1. Base 3 2. Collector E 1 3. Emitter 2 3 2SC5447 Absolute Maximum Ratings (Ta = 25

1.837. 2sc5757.pdf Size:109K _hitachi

C5
C5

2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WE. 2SC5757 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 3.5 V

1.838. 2sc5480.pdf Size:33K _hitachi

C5
C5

2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCES = 1500 V Isolated package TO3PFM Built-in damper diode Outline TO3PFM C 2 1 B 1.Base 3 2.Collector E 1 3.Emitter 2 3 2SC5480 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VC

1.839. 2sc5138.pdf Size:47K _hitachi

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2SC5138 Silicon NPN Epitaxial ADE-208-225A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 6 GHz typ High gain, low noise figure PG = 13 dB typ, NF = 1.8 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YL. Attention: This device is very sensitive to electro static d

1.840. 2sc5470.pdf Size:42K _hitachi

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2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec(typ.) at fH=64kHz Outline TO3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base vol

1.841. 2sc5050.pdf Size:24K _hitachi

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2SC5050 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 11 GHz Typ High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC5050 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to em

1.842. 2sc5772.pdf Size:90K _hitachi

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2SC5772 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1390 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 9 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note: Marking is FR-. This data sheet contains tentative specification

1.843. 2sc5554.pdf Size:49K _hitachi

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2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features Super compact package; (1.4 ? 0.8 ? 0.59mm) Capable low voltage operation ; (VCE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is YH-. 2SC5554 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO

1.844. 2sc5246.pdf Size:64K _hitachi

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2SC5246 Silicon NPN Epitaxial ADE-208-264 1st. Edition Application VHF / UHF wide band amplifier Features High gain bandwidth product fT = 12 GHz typ High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5246 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltag

1.845. 2sc5827.pdf Size:92K _hitachi

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2SC5827 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE2081464(Z) Rev.0 Nov. 2001 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is WW. 2SC5827 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 5.5 V E

1.846. 2sc5125.pdf Size:97K _mitsubishi

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1.847. 2sc5929.pdf Size:60K _mitsubishi

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1.848. 2sc5039.pdf Size:63K _no

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1.849. 2sc5287.pdf Size:24K _no

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2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose (Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB=7V 100ma

1.850. bc546-547-548.pdf Size:817K _secos

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BC546 / BC547 / BC548 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1 1 1 1Collector J 2Base 2 2 2 CLASSIFICATION OF hFE 3Emitter 3 3 3 A D Product-Rank BC546A BC546B BC546C Millimeter REF. B Min. Max. Product-Rank BC547A BC547B BC

1.851. 2sc5585.pdf Size:198K _secos

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2SC5585 0.5A , 15V NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free SOT-523 FEATURES High Current. Low VCE(sat). VCE(sat)?0.25V (@IC=200mA / IB=10mA) A Complement of 2SC4738. M 3 3 Top View C B Application 1 1 2 General Purpose Amplification. L 2 K E MARKING D H J

1.852. 2sc5658.pdf Size:455K _secos

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2SC5658 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-723 FEATURE Low current (max. 150 mA) Low voltage (max. 50 V). CLASSIFICATION OF hFE (1) Product-Rank 2SC2658-Q 2SC2658-R 2SC2658-S Range 120~270 180~390 270~560 Marking BQ BR BS Collector 3 Millimeter Mill

1.853. bc556-557-558.pdf Size:308K _secos

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BC556, B, C BC557, A, B, C Elektronische Bauelemente BC558, A, B, C RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 PNP Transistor FEATURES Power dissipation PCM: 0.625 W (Tamb=25?) Collector current ICM: - 0.1 A 1 Collector-base voltage 2 3 VCBO: BC556 -80 V BC557 -50 V 1 2 3 BC558 -30 V Operating and storage junction temperatu

1.854. 2sc5345.pdf Size:698K _secos

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2SC5345 0.02A , 30V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE RF amplifier A L High current transition frequency fT=550MHz(Typ.), 3 3 [VCE=6V, IE=-1mA] Top View C B Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] 1 Low base time constant and high g

1.855. 2sc5344.pdf Size:292K _secos

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2SC5344 0.8A , 35V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES Audio power amplifier application A High hFE=100~320 L 3 Complementary to 2SA1981 3 Top View C B 1 1 2 2 K E CLASSIFICATION OF hFE(1) D Product-Rank 2SC5344-O 2SC5344-Y H J F G Range 100~20

1.856. 101nu70-71_102nu70-71_103nu70-71_104nu70-71_105nu70-71_106nu70-71_107nu70-71_gc507_gc508_gc509_gc515_gc516_gc517_gc518_gc519_gf505_gf506_gf507_af106_af109r_af239_af139.pdf Size:166K _tesla

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1.857. gd607_gd608_gd609_ad161_gd617_gd618_gd619_ad162_oc30_2nu73_3nu73_4nu73_5nu73_6nu73_7nu73_2nu72_3nu72_4nu72_5nu72_oc26_oc27_2nu74_3nu74_4nu74_5nu74_6nu74_7nu74_gc500_gc501_gc502_gc510_gc511_gc512.pdf Size:171K _tesla

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1.858. gc520-k_gc521-k_gc522-k_bc413b-c_kc147_kc148_kc149_kc237a-b-v_kc238a-b-c_kc239f-b-c_kc507_kc508_kc509_kc635_kc637_kc639.pdf Size:148K _tesla

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1.859. kd366-a-b_kd367-a-b_kc510_ku601_ku602_ku605_ku606_ku607_ku608_ku611_ku612_su160_su161_su167_su169.pdf Size:135K _tesla

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1.860. 2sc5211.pdf Size:60K _isahaya

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????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ?????????????????????????????

1.861. 2sc5210.pdf Size:169K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

1.862. 2sc5169.pdf Size:113K _isahaya

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????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ???????????????????????????

1.863. 2sc5398.pdf Size:96K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

1.864. 2sc5626.pdf Size:278K _isahaya

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? ?Transistor? 2SC5626 For High Frequency Amplify Application Silicon NPN Epitaxial Type (Super Mini type) DESCURIPTION Mitsubishi 2SC5626 is a super mini packege resin sealed OUTLINE DRAWING silicon NPN epitaxial ty pe transistor. It is designed f or high Unit:mm f requency amplif y application. 2.1 0.425 0.425 1.25 FEATURE 1.30 ?Super mini package f or easy mounting 0.3 1 0.6

1.865. 2sc5212.pdf Size:161K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

1.866. 2sc5882.pdf Size:115K _isahaya

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???????? 2SC5882 ?????? ???(??) ????NPN???????? ???????????????????????? ??? 2SC5882???????????????NPN???? ????? ???????????????????????????? ??????????fT,??NF????????? ??:mm ???????(0.45mm)????????????????? ???????????????????????? 0.2 0.2 0.8 ??? 1 ????(0.45mm)??????????????????? ?????????????????? 3 ?fT????fT=4.5GHz??? 2 ????,???? ???????????? ??? TV?????,???,????

1.867. 2sc5485.pdf Size:89K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

1.868. 2sc5396.pdf Size:113K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

1.869. 2sc5384.pdf Size:221K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more re

1.870. 2sc5395.pdf Size:119K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

1.871. 2sc5383.pdf Size:121K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicond

1.872. 2sc5619.pdf Size:146K _isahaya

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??????????? 2SC5619 ?????? ????NPN ???????? ?? ??? ??:mm 2SC5619????????????????NPN??????? ?????????? 2.5 ?fT????????????????????????????? 1.5 0.5 0.5 ????????? ? ?? ?fT??? fT=4.5GHz??? ? ? ?Cob?????Cob=1.0pF?? ??????????????????????????? ?? TV ??????????????? ?? ?? ??? ?? JEITA:SC-59 VCBO ??????????? 20 V JEDEC:TO-236 ?? VEBO ??????????? 3 V

1.873. 2sc5214.pdf Size:155K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

1.874. 2sc5484.pdf Size:100K _isahaya

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????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ????????????????????????????

1.875. 2sc5213.pdf Size:76K _isahaya

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????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ????????????????????????????

1.876. 2sc5807.pdf Size:78K _isahaya

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? ? Transistor DEVELOPING 2SC5807 For Low Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit :mm 2SC5807 is a silicon NPN epitaxial Transistor. 4.6 MAX It designed with high collector current and high collector dissipation. 1.5 1.6 FEATURE ?High collector current IC=5A ?Small collector to Emitter saturation voltage C E B ??VCE(sat)=0.25V TY

1.877. 2sc5477.pdf Size:116K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

1.878. 2sc5482.pdf Size:105K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

1.879. 2sc5620.pdf Size:236K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the

1.880. 2sc5168.pdf Size:120K _isahaya

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????????? http://www.idc-com.co.jp ?854-0065 ??????????6-41 ??????????? ??????????????????????????????????????????????????????? ?????????????????????????????????????????????????????? ????????????????????????????????????? ??????????????? ?????????????????????????????????????????????????????? ??????????????????????????????????????????????????? ???????????????????????????

1.881. 2sc5804.pdf Size:374K _isahaya

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?SMALL-SIGNAL TRANSISTOR? 2SC5804 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm 2SC5804 is a super mini package resin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. 0.8 0.2 0.2 Since it is a super-thin flat lead type package,a high-density mounting are possible. Complementary

1.882. 2sc5209.pdf Size:146K _isahaya

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ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur

1.883. cc5401.pdf Size:105K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 (9AW) TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 150 V Collector -Base Voltage VCBO 160 V

1.884. bc559_bc560.pdf Size:298K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL BC559 BC560 UNITS VCEO Collector Emitter Voltage 30 45 V VCBO Collector Base Voltage 30 50 V VEBO Emitter

1.885. c45c5_c45c11.pdf Size:282K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL C45C5 C45C11 UNIT Collector -Emitter Voltage VCEO 45 80 V Collector -Emitter Voltage VCES 55 90 V Emitter Base Voltage VEBO

1.886. csc5299f.pdf Size:123K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS CSC5299F NPN TO- 3P Fully Isolated Plastic Package B C E Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise ) VALUE DESCRIPTION SYMBOL UNIT VCBO Collector -Base Voltage 1500 V VCEO Collector -Emitter Voltage 800 V VEBO Emitter Base Vo

1.887. bc549_bc550.pdf Size:355K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC549,A.B,C NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC550,A,B,C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C Low Noise Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC549 BC550 UNITS Collector Emitter Voltage VCEO 30 45 V Col

1.888. csc5200.pdf Size:63K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CSC5200F TO-3P POWER AMPLIFIER APPLICATIONS. Complementary CSA1943F MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 160 V Collector -Emitter Voltage VCEO 160 V Emitter -Base Voltage VEBO 5.0 V Collector Current IC 12 A Base Curr

1.889. a1941_c5198.pdf Size:335K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS A1941 (9TW) PNP C5198 (9TW) NPN TO- 3PN Non Isolated Plastic Package Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise ) VALUE DESCRIPTION SYMBOL UNIT Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Vo

1.890. bc556_bc557_bc558.pdf Size:353K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC556, A, B, PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC557, A, B, C BC558, A, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC556 BC557 BC558 UNITS Collector Emitter

1.891. bc546_bc547_bc548.pdf Size:119K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC546, A, B, C NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC547, A. B, C BC548, A. B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC546 BC547 BC548 UNITS Collector Emitte

1.892. 2sc5802.pdf Size:146K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5802 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Wide area of safe operation APPLICATIONS ·For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings

1.893. 2sc5439.pdf Size:201K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION ·With TO-220F package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator applications ·High voltage switching applications ·DC-DC converter applications ·Inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplifie

1.894. 2sc515.pdf Size:150K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMET

1.895. 2sc5271.pdf Size:169K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION ·With TO-220F package APPLICATIONS ·For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vo

1.896. 2sc5124.pdf Size:196K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION ·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·Display horizontal deflection output ·Switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PAR

1.897. 2sc5296.pdf Size:205K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed ·Built in damper diode APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitt

1.898. 2sc5386.pdf Size:197K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5386 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol

1.899. 2sc5895.pdf Size:145K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION ·With TO-220F package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Power supply for audio and visual equipments such as TVs and VCRs ·Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and s

1.900. 2sc5048.pdf Size:42K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5048 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Collector metal (fin) is fully covered with mold resin APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base

1.901. 2sc5280.pdf Size:230K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5280 DESCRIPTION ·With TO-3P(H)IS package ·High voltage ·Low saturation voltage ·High speed ·Bult-in damper diode APPLICATIONS ·High speed switching applications ·Horizontal deflection output for medium resolution display,color TV PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-

1.902. 2sc5417.pdf Size:176K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

1.903. 2sc5358.pdf Size:128K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5358 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3P(

1.904. 2sc5042.pdf Size:41K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5042 DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute

1.905. 2sc5071.pdf Size:183K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?)

1.906. 2sc5339.pdf Size:78K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5339 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for medium resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simpli

1.907. 2sc5299.pdf Size:78K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5299 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolut

1.908. 2sc5287.pdf Size:182K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION ·With TO-3PN package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMB

1.909. 2sc5129.pdf Size:41K _jmnic

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Product Specification www.jmnic.com Silicon Power Transistors 2SC5129 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and

1.910. 2sc5382.pdf Size:147K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-e

1.911. 2sc5101.pdf Size:188K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1909 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

1.912. 2sc5002.pdf Size:235K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5002 DESCRIPTION ·With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITION

1.913. 2sc5297.pdf Size:74K _jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC5297 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolu

1.914. 2sc5669.pdf Size:179K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION · ·With TO-3PN package ·Complement to type 2SA2031 ·Wide area of safe operation ·Large current capacitance APPLICATIONS ·For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25?

1.915. 2sc5003.pdf Size:228K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION ·With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum rat

1.916. 2sc5404.pdf Size:148K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5404 DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol

1.917. 2sc5099.pdf Size:188K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1907 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope

1.918. 2sc5416.pdf Size:177K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

1.919. 2sc5100.pdf Size:188K _jmnic

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JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION · ·With TO-3PML package ·Complement to type 2SA1908 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

1.920. ktc5103d_l.pdf Size:400K _kec

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SEMICONDUCTOR KTC5103D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 High Power Dissipation : PC=1.3W(Ta=25 ) _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTA1385D/L _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H K 2.00 + 0.2

1.921. bc516.pdf Size:339K _kec

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SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K MAXIMUM RATING (Ta=25 ) G B 4.80 MAX C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEB

1.922. ktc5706d-l.pdf Size:794K _kec

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SEMICONDUCTOR KTC5706D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. A I FEATURES C J ·Adoption of FBET, MBIT Processes. DIM MILLIMETERS _ ·High Current Capacitance. A 6.60 + 0.2 _ B 6.10 + 0.2 ·Low Collector-to-Emitter Saturation Voltage. _ C 5.0 + 0.2 _ D 1.10 + 0.2 ·High-Speed Switchin

1.923. ktc5027.pdf Size:447K _kec

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SEMICONDUCTOR KTC5027 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC DC 3 Collector Current A ICP Pulse 10 IB Base Current 1.5 A Collector Power Dissipat

1.924. ktc5242a.pdf Size:85K _kec

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SEMICONDUCTOR KTC5242A TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q B K FEATURES High Collector Voltage : VCEO=230V(Min.) Complementary to KTA1962A. DIM MILLIMETERS Recommended for 80W High Fidelity Audio Frequency A 15.9 MAX B 4.8 MAX Amplifier Output Stage. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAX

1.925. ktc5706.pdf Size:404K _kec

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SEMICONDUCTOR KTC5706 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, A B MOTOR DRIVERS, STROBES APPLICATION. D C E FEATURES F Adoption of FBET, MBIT Processes. High Current Capacitance. G Low Collector-to-Emitter Saturation Voltage. H High-Speed Switching. DIM MILLIMETERS J A 8.3 MAX Ultra small Package Facilitates Miniaturization i

1.926. bc559_bc560.pdf Size:28K _kec

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SEMICONDUCTOR BC559/560 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE APPLICATION. B C FEATURE For Complementary with NPN Type BC549/550. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 BC559 -30 G 0.85 VCBO Collector-Base Voltage V H 0.45 BC560 -50 _ H J 14.00 + 0.50 K 0.

1.927. ktc5197.pdf Size:270K _kec

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SEMICONDUCTOR KTC5197 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A Q B K FEATURES Recommended for 55W Audio Frequency Amplifier Output Stage. DIM MILLIMETERS Complementary to KTA1940. A 15.9 MAX B 4.8 MAX _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 MAXIMUM RATING (Ta=25 ) G 3.3 MAX d H 9.0 CHARACTERISTIC SYMBOL RATING U

1.928. ktc5001d_l.pdf Size:401K _kec

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SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. : VCE(sat)=0.13V(Typ.) at (IC=4A, IB=0.05A) A I C J Large Collector Current DIM MILLIMETERS _ A 6.60 + 0.2 : IC=10A(dc) IC=15A(10ms, single pulse) _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTA1834D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00

1.929. ktc5707d_l.pdf Size:406K _kec

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SEMICONDUCTOR KTC5707D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. A I FEATURES C J Adoption of FBET, MBIT Processes. DIM MILLIMETERS _ High Current Capacitance. A 6.60 + 0.2 _ B 6.10 + 0.2 Low Collector-to-Emitter Saturation Voltage. _ C 5.0 + 0.2 _ D 1.10 + 0.2 High-Speed Switching. _ E

1.930. ktc5027f.pdf Size:454K _kec

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SEMICONDUCTOR KTC5027F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC DC 3 Collector Current A ICP Pulse 10 IB Base Current 1.5 A Collector Power Dissipa

1.931. bc556_bc557_bc558.pdf Size:274K _kec

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SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES For Complementary With NPN Type BC546/547/548. N DIM MILLIMETERS A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 BC556 -80 K 0.55 MAX

1.932. bc546_bc547_bc548.pdf Size:277K _kec

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SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C FEATURES ·High Voltage : BC546 VCEO=65V. N DIM MILLIMETERS ·For Complementary With PNP Type BC556/557/558. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL

1.933. ktc5242.pdf Size:85K _kec

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SEMICONDUCTOR KTC5242 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. A Q B K FEATURES High Collector Voltage : VCEO=230V(Min.) Complementary to KTA1962. DIM MILLIMETERS Recommended for 80W High Fidelity Audio Frequency A 15.9 MAX B 4.8 MAX Amplifier Output Stage. _ C 20.0 + 0.3 _ D 2.0 + 0.3 D d 1.0+0.3/-0.25 E 2.0 F 1.0 G 3.3 MAX d H 9.0 MAXIM

1.934. bc517.pdf Size:35K _kec

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SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K MAXIMUM RATING (Ta=25 ) G B 4.80 MAX C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 40 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO

1.935. 2sc5586_2sc5830_2sc5924.pdf Size:1332K _sanken-ele

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1.936. 2sc5249.pdf Size:24K _sanken-ele

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2SC5249 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) 2SC5249 Symbol 2SC5249 Symbol Conditions Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 100max VCBO 600 ICBO VCB=600V A V 100max VCEO 600 I

1.937. 2sc5271.pdf Size:15K _sanken-ele

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2SC5271 Silicon NPN Triple Diffused Planar Transistor Application : Resonant Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5271 Symbol Conditions 2SC5271 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 100max A V VCEO 200 IEBO VEB=7V 100max A V VEBO 7 V(BR

1.938. 2sc5124.pdf Size:24K _sanken-ele

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2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol 2SC5124 Unit Symbol Conditions 2SC5124 Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A 100max VCBO

1.939. 2sc5071.pdf Size:25K _sanken-ele

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2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol Conditions Symbol 2SC5071 Unit 2SC5071 Unit 0.2 4.8 0.4 15.6 ICBO VCB=500V VCBO 500 V 100max A 0.1 9.6 2.0 IE

1.940. 2sc5239.pdf Size:23K _sanken-ele

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2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220) Symbol 2SC5239 Symbol Conditions 2SC5239 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IEBO VEB=7V

1.941. 2sc5287.pdf Size:24K _sanken-ele

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2SC5287 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose (Ta=25C) Absolute maximum ratings Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Symbol 2SC5287 Unit Symbol Conditions 2SC5287 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 ICBO VCBO 900 V VCB=800V 100max A IEBO VEB=7V 100ma

1.942. 2sc5333.pdf Size:22K _sanken-ele

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2SC5333 Silicon NPN Triple Diffused Planar Transistor Application : Series Regulator, Switch, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5333 Symbol Conditions 2SC5333 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300V 1.0max mA V VCEO 300 IEBO VEB=6V 1.0max mA V VEBO 6 V(BR)CEO I

1.943. 2sc5101.pdf Size:25K _sanken-ele

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2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 10max A VCEO 140 V IEBO VEB=6V 10max A VEBO 6 V V(

1.944. 2sc5370.pdf Size:12K _sanken-ele

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2SC5370 Silicon NPN Epitaxial Planar Transistor Application : Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5370 Symbol Conditions 2SC5370 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60 ICBO VCB=60V 10max A V VCEO 40 IEBO VEB=7V 10max A V VEBO 7 V(BR)CEO IC=25mA

1.945. 2sc5002.pdf Size:24K _sanken-ele

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2SC5002 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) Symbol 2SC5002 Symbol Conditions 2SC5002 Unit Unit 0.2 0.2 5.5 15.6 ICBO1 VCB=1200V A VCBO 1500 10

1.946. 2sc5003.pdf Size:25K _sanken-ele

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Equivalent C circuit B Built-in Damper Diode 2SC5003 (50?) E Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC5003 Symbol Conditions 2SC5003 Unit U

1.947. 2sc5130.pdf Size:24K _sanken-ele

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2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 600 V ICBO VCB=500V 100max A 2.8 VCEO 400

1.948. 2sc5099.pdf Size:24K _sanken-ele

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2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) Application : Audio and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SC5099 Unit Symbol Conditions 2SC5099 Unit 0.2 0.2 5.5 15.6 0.2 VCBO 120 V ICBO VCB=120V 10max A 3.45 VCEO 80 V IEBO VEB=6V 10max A VEBO 6 V V(B

1.949. 2sc5100.pdf Size:24K _sanken-ele

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2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF) 2SC5100 Unit Symbol 2SC5100 Unit Symbol Conditions 0.2 0.2 5.5 15.6 0.2 3.45 10max A VCBO 160 V ICBO VCB=160V VCEO 120 V VEB=6V IEBO 10max A VEBO 6 V

1.950. 2sc5802.pdf Size:116K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage;high speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high voltage color display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC5802 Fig.1 simplified outline (TO-3P(H)IS) and symbol Abso

1.951. 2sc5439.pdf Size:165K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION Ў¤ With TO-220F package Ў¤ High collector breakdown voltage Ў¤ Excellent switching times APPLICATIONS Ў¤ Switching regulator applications Ў¤ High voltage switching applications Ў¤ DC-DC converter applications Ў¤ Inverter lighting applications PINNING PIN 1 2 3 Base Collector Fi

1.952. 2sc5407.pdf Size:228K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Col

1.953. ksc5027.pdf Size:88K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 DESCRIPTION · ·With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

1.954. 2sc515.pdf Size:122K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC515 DESCRIPTION Ў¤ With TO-66 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in line-operated color TV chroma output circuits and sound output circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=

1.955. 2sc5352.pdf Size:96K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.956. 2sc5249.pdf Size:223K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector

1.957. ksc5030f.pdf Size:116K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5030F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

1.958. 2sc5271.pdf Size:114K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5271 DESCRIPTION Ў¤ With TO-220F package APPLICATIONS Ў¤ For resonant switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg

1.959. 2sc5150.pdf Size:284K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5150 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

1.960. ksc5338.pdf Size:146K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 450V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

1.961. 2sc5124.pdf Size:140K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switchihg transistor APPLICATIONS Ў¤ Display horizontal deflection output Ў¤ Switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(

1.962. 2sc5242.pdf Size:237K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?)

1.963. 2sc5296.pdf Size:150K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed Ў¤ Built in damper diode APPLICATIONS Ў¤ Ultrahigh-definition CRT display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum ratin

1.964. 2sc5305.pdf Size:92K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION ·High Breakdown Voltage :V(BR)CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emit

1.965. 2sc5198.pdf Size:287K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

1.966. 2sc5386.pdf Size:161K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage;high speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Horizontal deflection output for high resolution display,color TV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5386 Fig.1 simplified outline (T

1.967. 2sc5200.pdf Size:276K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage application

1.968. 2sc5895.pdf Size:115K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION Ў¤ With TO-220F package Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Power supply for audio and visual equipments such as TVs and VCRs Ў¤ Industrial equipments such as DC-DC converters PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum r

1.969. 2sc5048.pdf Size:153K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High speed Ў¤ High voltage Ў¤ Low saturation voltage APPLICATIONS Ў¤ Horizontal deflection output for high resolution display,colorTV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5048 Absolute maximum ratings(Ta=25Ў

1.970. ksc5088.pdf Size:103K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5088 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

1.971. 2sc5280.pdf Size:194K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage Ў¤ Low saturation voltage Ў¤ High speed Ў¤ Bult-in damper diode APPLICATIONS Ў¤ High speed switching applications Ў¤ Horizontal deflection output for medium resolution display,color TV PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5280 Maxi

1.972. 2sc5248.pdf Size:264K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

1.973. 2sc5149.pdf Size:283K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5149 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for medium resolution display color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?)

1.974. 2sc5885.pdf Size:253K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

1.975. 2sc5764.pdf Size:275K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V V

1.976. 2sc5387.pdf Size:100K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5387 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UN

1.977. 2sc5887.pdf Size:262K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 7A; IBB= 0.35A) ·Complement to Type 2SA2098 APPLICATIONS ·Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

1.978. 2sc5417.pdf Size:142K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION Ў¤ With TO-220F package Ў¤ High breakdown voltage Ў¤ High reliability APPLICATIONS Ў¤ For inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO

1.979. ksc5386.pdf Size:129K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5386 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

1.980. ksc5337.pdf Size:144K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5337 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

1.981. 2sc5241.pdf Size:84K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5241 DESCRIPTION ·With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMET

1.982. 2sc5993.pdf Size:262K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Complement to Type 2SA2140 APPLICATIONS ·Power amplification ·For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO

1.983. 2sc5358.pdf Size:158K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5358 DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ Complement to type 2SA1986 APPLICATIONS Ў¤ Power amplifier applications Ў¤ Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and sy

1.984. ksc5367.pdf Size:150K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5367 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba

1.985. 2sc5042.pdf Size:164K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed APPLICATIONS Ў¤ Ultrahigh-definition CRT display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5042 Fig.1 simplified outline (TO-3PML) and symbol Emitter Ab

1.986. 2sc5250.pdf Size:124K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5250 DESCRIPTION ·With TO-3PML package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolut

1.987. 2sc5071.pdf Size:147K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5071 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum rat

1.988. 2sc5239.pdf Size:84K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5239 DESCRIPTION ·With TO-220C package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VA

1.989. 2sc5339.pdf Size:159K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5339 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage ,high speed Ў¤ Low saturation voltage Ў¤ Bult-in damper diode APPLICATIONS Ў¤ Horizontal deflection output for medium resolution display,color TV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolu

1.990. 2sc5299.pdf Size:171K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5299 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High breakdown voltage, high reliability. Ў¤ High speed APPLICATIONS Ў¤ Ultrahigh-definition CRT display Ў¤ Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Ў

1.991. 2sc5287.pdf Size:145K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5287 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(

1.992. 2sc5129.pdf Size:154K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5129 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High speed Ў¤ High voltage Ў¤ Low saturation voltage APPLICATIONS Ў¤ Horizontal deflection output for high resolution display,colorTV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25

1.993. ksc5321.pdf Size:150K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

1.994. ksc5086.pdf Size:130K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5086 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

1.995. 2sc5382.pdf Size:115K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5382 DESCRIPTION ·With TO-220F package ·High Voltage ·High speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V

1.996. 2sc5197.pdf Size:284K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5197 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

1.997. 2sc5101.pdf Size:152K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1909 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PAR

1.998. 2sc5359.pdf Size:142K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5359 DESCRIPTION · ·With TO-3PL package ·Complement to type 2SA1987 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL)

1.999. 2sc5196.pdf Size:237K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 5A ·Good Linearity of hFE ·Complement to Type 2SA1939 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(

1.1000. 2sc5517.pdf Size:260K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5517 DESCRIPTION ·High Breakdown Voltage- :VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

1.1001. 2sc5002.pdf Size:174K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switching APPLICATIONS 2SC5002 Ў¤ Display horizontal deflection output; switching regulator general purpose PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) S

1.1002. 2sc5199.pdf Size:137K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5199 DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) an

1.1003. ksc5089.pdf Size:125K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5089 DESCRIPTION ·High Collector-Base Voltage- : VCBO = 1500V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in high definition color display horizontal deflection output application. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V

1.1004. 2sc5763.pdf Size:283K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC5763 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulators applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V V

1.1005. 2sc5297.pdf Size:150K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5297 DESCRIPTION · ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol

1.1006. ksc5039.pdf Size:138K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5039 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

1.1007. 2sc5803.pdf Size:256K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5803 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high voltage color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-B

1.1008. 2sc5143.pdf Size:130K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5143 DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for high resolution display,colorTV ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplifi

1.1009. 2sc5148.pdf Size:150K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5148 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

1.1010. 2sc5480.pdf Size:229K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5480 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1500 V VEB

1.1011. ksc5021.pdf Size:87K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors KSC5021 DESCRIPTION · ·With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Colle

1.1012. 2sc5669.pdf Size:143K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5669 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Complement to type 2SA2031 Ў¤ Wide area of safe operation Ў¤ Large current capacitance APPLICATIONS Ў¤ For audio frequency output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Ў¤ Abso

1.1013. 2sc5003.pdf Size:177K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5003 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High voltage switching transistor Ў¤ Built-in damper diode APPLICATIONS Ў¤ Display horizontal deflection output; switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ab

1.1014. ksc5031.pdf Size:109K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5031 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·High Reliability APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110

1.1015. 2sc5130.pdf Size:109K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5130 DESCRIPTION ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PA

1.1016. 2sc5404.pdf Size:117K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ High voltage;high speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Horizontal deflection output for high resolution display,color TV Ў¤ High speed switching applications PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SC5404 Fig.1 simplified outline (T

1.1017. 2sc5354.pdf Size:263K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5354 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

1.1018. 2sc5099.pdf Size:152K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5099 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1907 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PAR

1.1019. 2sc5416.pdf Size:143K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION Ў¤ With TO-220F package Ў¤ High breakdown voltage Ў¤ High reliability APPLICATIONS Ў¤ For inverter lighting applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO

1.1020. 2sc508.pdf Size:123K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 DESCRIPTION Ў¤ With TO-66 package Ў¤ High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS For power switching and TV horizontal output applications. Ў¤ PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratin

1.1021. 2sc5100.pdf Size:152K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complement to type 2SA1908 APPLICATIONS Ў¤ Audio and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PAR

1.1022. 2sc5343.pdf Size:629K _htsemi

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2SC5343 TRANSISTOR (NPN) SOT-23 FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER VCBO Collector-Base Voltage 60 V 3. COLLECTOR VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 150 mA Base Current -Continuous Ib 50 mA PC Co

1.1023. 2sc5345.pdf Size:491K _htsemi

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2SC5345 TRANSISTOR (NPN) FEATURES SOT-23 RF amplifier High current transition frequency fT=550MHz(Typ.), 1. BASE [VCE=6V, IE=-1mA] 2. EMITTER Low output capacitance : 3. COLLECTOR Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value U

1.1024. 2sc5343.pdf Size:152K _lge

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2SC5343(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=10dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (mill

1.1025. bc548-547-546.pdf Size:548K _lge

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BC546/BC547/BC548(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25? unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage BC546 80 BC547 50 VCBO V BC548 30 Collector-Emitter Voltage BC546 65 VCEO BC547 45 V BC548 30 Dimensions in inches

1.1026. 2sc5585.pdf Size:204K _lge

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2SC5585 SOT-523 Transistor(NPN) 1. BASE SOT-523 2. EMITTER 3. COLLECTOR Features High current. Low VCE(sat). VCE(sat)?250mV at IC = 200mA / IB = 10mA MARKING: BX Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Vol

1.1027. bc556-557-558.pdf Size:573K _lge

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BC556/557/558(PNP) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC546/BC547/BC548 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC556 -80 VCBO BC557 -50 V BC558 -30 -65 -45 V VCEO Collector-Emitter Voltage -30 Dimensions in inches and (millimeters) V

1.1028. 2sc5345.pdf Size:178K _lge

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2SC5345 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Dimensions in inches and (millimeters) Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25? unl

1.1029. 2sc5343_sot-23.pdf Size:202K _lge

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2SC5343 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). Low Noise: NF=1dB(Typ). At f=1KHZ. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO C

1.1030. 2sc5344.pdf Size:193K _lge

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2SC5344(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 30 V VEBO Emitter-B

1.1031. 2sc5585.pdf Size:192K _wietron

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2SC5585 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES: SOT-523(SC-75) * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA MAXIMUM RATINGS (TA=25°Cunless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 15 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 6 V Collector Current –Continuous IC 500 mA Collector Dissipatio

1.1032. 2sc5706.pdf Size:190K _wietron

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2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Large current capacitance D-PAK(TO-252) * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(Ta=25?C) Rating Symbol Value Unit VCBO 80 V Col

1.1033. bc5347b.pdf Size:146K _wietron

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BC5347B General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 1 BASE 2 *Moisture Sensitivity Level: 1 SOT-23 *ESD Rating - Human Body Model:>4000V 2 EMITTER -Machine Model:>400V ( T =25 C unless otherwise noted) M aximum R atings A Rating Symbol Value Unit V 45 Collector-Emitter Voltage CEO Vdc VCBO Vdc Collector-Base Voltage 50 Vdc Emitter-Base VOltage VEBO 6.0 Collector

1.1034. bc556_bc557_bc558.pdf Size:2241K _wietron

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BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead(Pb)-Free 2 BASE 1 2 3 1 EMITTER TO-92 Maximum Ratings ? ( T =25 C unless otherwise noted) A Rating Symbol BC556 BC557 BC558 Unit V -65 -45 Collector-Emitter Voltage ECO -30 V -30 V Collector-Base Voltage CBO -80 -50 V V EBO Emitter-Base Voltage -5 -5 -5 V l 100 Collector Current Co

1.1035. bc546_bc547_bc548.pdf Size:1074K _wietron

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BC546, A/B BC547, A/B/C BC548, A/B/C NPN General Purpose Transistor COLLECTOR 1 TO-92 2 BASE 1 2 3 3 EMITTER Maximum Ratings ( T =25°C unless otherwise noted) A Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VECO 65 45 30 Vdc Collector-Base Voltage V 80 50 30 Vdc CBO Emitter-Base Voltage VEBO 6 6 6 Vdc Collector Current Continuous lC 100 mAdc THERMAL CHARAC

1.1036. 2sc5344.pdf Size:715K _wietron

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2SC5344 NPN General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage 30 VCEO V VCBO Collector-Base Voltage 35 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA Total Device Dissipation PD 200 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55 to +

1.1037. hbc517.pdf Size:45K _hsmc

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Spec. No. : HA200217 HI-SINCERITY Issued Date : 2002.09.01 Revised Date : 2005.02.04 MICROELECTRONICS CORP. Page No. : 1/4 HBC517 NPN EPITAXIAL PLANAR TRANSISTOR Description General Purpose High Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..............................................................................................

1.1038. btc5181wc3.pdf Size:158K _cystek

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Spec. No. : C213WC3 Issued Date : 2003.08.15 CYStech Electronics Corp. Revised Date : Page No. : 1/3 High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline SOT-523 BTC5181WC3 B:Base C:Collector E:Emitter Features

1.1039. btc5103i3.pdf Size:213K _cystek

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Spec. No. : C651I3 Issued Date : 2005.10.05 CYStech Electronics Corp. Revised Date :2009.02.04 Page No. : 1/5 High Speed Switching Transistor BVCEO 60V IC 5A BTC5103I3 RCESAT 110mΩ Features • Low VCE(sat), VCE(sat)=0.33 V(typical), at IC / IB = 3A / 0.3A • High Switching Speed • Wide SOA • Complementary to BTA1952I3 • RoHS compliant package Symbol Outline

1.1040. btc5658y3.pdf Size:328K _cystek

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Spec. No. : C204Y3 Issued Date : 2011.11.03 CYStech Electronics Corp. Revised Date : 2014.06.18 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC5658Y3 Description • The BTC5658Y3 is designed for use in driver stage of AF amplifier and low speed switching. • Complementary to BTA2029Y3. • Pb-free lead plating and halogen-free package. Symbol Outline

1.1041. btc5706a3.pdf Size:177K _cystek

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Spec. No. : C819A3 Issued Date : 2006.06.06 CYStech Electronics Corp. Revised Date : Page No. : 1/ 5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706A3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation • Large current capability • Pb-free package Applications • DC-DC converter, relay drivers,

1.1042. btc5706i3.pdf Size:254K _cystek

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Spec. No. : C819I3 Issued Date : 2004.12.16 CYStech Electronics Corp. Revised Date :2011.11.18 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation • Large current capability • RoHS compliant package Applications • DC-DC converter

1.1043. bc517a3.pdf Size:263K _cystek

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Spec. No. : C214A3-A Issued Date : 2007.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 General Purpose NPN Epitaxial Planar Transistor BC517A3 Description • The BC517A3 is a darlington amplifier transistor • Pb-free package Symbol Outline BC517A3 TO-92 C B E B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter S

1.1044. btc5095s3.pdf Size:436K _cystek

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Spec. No. : C212S3 Issued Date : 2003.08.15 CYStech Electronics Corp. Revised Date : 2014.04.25 Page No. : 1/ 11 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5095S3 Description The BTC5095S3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline BTC5095S3 SOT-323 B:Base C:Collector E:Emitter Features

1.1045. btc5094n3.pdf Size:176K _cystek

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Spec. No. : C212N3 Issued Date : 2002.05.08 CYStech Electronics Corp. Revised Date :2006.03.14 Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5094N3 Description The BTC5094N3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline BTC5094N3 SOT-23 B:Base C:Collector E:Emitter Features

1.1046. mtc5806q8.pdf Size:406K _cystek

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Spec. No. : C407Q8 Issued Date : 2008.12.02 CYStech Electronics Corp. Revised Date : 2012.06.26 Page No. : 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC5806Q8 BVDSS 60V -60V ID 4.5A -3.5A RDSON(typ.) @VGS=(-)10V 37mΩ 70mΩ RDSON(typ.) @VGS=(-)4.5V 42mΩ 93mΩ Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in

1.1047. btc5706j3.pdf Size:155K _cystek

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Spec. No. : C819J3 Issued Date : 2004.12.18 CYStech Electronics Corp. Revised Date : Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTC5706J3 Features • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation • Large current capability Applications • DC-DC converter, relay drivers, lamp drivers, motor

1.1048. pzc502fyb.pdf Size:538K _unikc

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PZC502FYB P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 550mΩ @VGS = -4.5V -0.7A SOT-523 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 TA = 25 ° C -0.7 ID Continuous Drain Current TA = 70 ° A C -0.6 IDM -3 Pulsed Drain

1.1049. 2sc5171i.pdf Size:488K _blue-rocket-elect

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2SC5171I(BR3DA5171I) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-251 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-251 Plastic Package. 特征 / Features 特征频率高,与 2SA1930I(BR3CA1930I)互补。 High fT, complementary pair with 2SA1930I(BR3CA1930I). 用途 / Applications 用于一般功率放大和驱动级放大。 General power and d

1.1050. 2sc536km_2sc536m.pdf Size:1387K _blue-rocket-elect

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2SC536KM(BR3DG536KM) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 大电流容量,宽阔的安全工作区。 Large current capacity and wide ASO. 用途 / Applications 用于小信号一般放大电路。 Small signal general purpose amplifier applications

1.1051. 2sc5371.pdf Size:412K _blue-rocket-elect

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2SC5371(BR3DA5371F) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package. 特征 / Features 击穿电压高,反向漏电流小,饱和压降低。 High VCEO, small ICBO and VCE(sat). 用途 / Applications 用于彩色电视机扫描调速电路及一般高频放大电路。 Color TV

1.1052. 2sc5171s.pdf Size:472K _blue-rocket-elect

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2SC5171S(BR3DA5171SQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package. 特征 / Features 特征频率高,与 2SA1930S(BR3CA1930SQ)互补。 High fT, complementary pair with 2SA1930S(BR3CA1930SQ). 用途 / Applications 用于一般功率放大和驱动级放大。 General power an

1.1053. l2sc5658rm3t5g.pdf Size:158K _lrc

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LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 • Reduces Board Space SOT –723 • High h

1.1054. l2sc5635wt1g.pdf Size:2204K _lrc

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LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC5635WT1G 1.High gain bandwidth product.(Typ.fT=8.0GHz) 2.High gain,low noise S-L2SC5635WT1G 3.Can operate at low voltage 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC

1.1055. l2sc5658qm3t5g.pdf Size:330K _lrc

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LESHAN RADIO COMPANY, LTD. L2SC5658QM3T5G NPN Silicon General L2SC5658RM3T5G Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier 3 applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium. 2 Features 1 • Reduces Board Space SOT –723 • High h

1.1056. dtc502.pdf Size:364K _first_silicon

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SEMICONDUCTOR DTC502 TECHNICAL DATA Digital transistors (built-in resistors) • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 3 resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with 2 complete isolation to allow negative biasing of the input. 1 They also have the advan

1.1057. dtc504.pdf Size:426K _first_silicon

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SEMICONDUCTOR DTC504 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR Digital transistors (built-in resistors) • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 3 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the input. The

1.1058. dtc501.pdf Size:358K _first_silicon

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SEMICONDUCTOR DTC501 TECHNICAL DATA Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor 2 Transistor) contains a single transistor with a monolithic bias network 1 consisting of two resistors;

1.1059. dtc511.pdf Size:196K _first_silicon

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SEMICONDUCTOR DTC511 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver 3 • Features 2 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). SC-89 2) The bias resistors consist of thin-film resistors

1.1060. dtc505.pdf Size:359K _first_silicon

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SEMICONDUCTOR DTC505 TECHNICAL DATA Digital transistors (built-in resistors) • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 3 resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with 2 complete isolation to allow negative biasing of the 1 input. They also have the adva

1.1061. dtc510.pdf Size:198K _first_silicon

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SEMICONDUCTOR DTC510 TECHNICAL DATA NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications Inverter, Interface, Driver 3 • Features 2 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1 resistors (see equivalent circuit). SC-89/SOT-523 2) The bias resistors consist of thin-film re

1.1062. dtc506.pdf Size:184K _first_silicon

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SEMICONDUCTOR DTC506 TECHNICAL DATA Digital transistors (built-in resistors) NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • Applications 3 Inverter, Interface, Driver • Features 2 1) Built-in bias resistors enable the configuration of an 1 inverter circuit without connecting external input SC-89(SOT-5203) resistors (see equivalent circuit). 2

1.1063. 2sc5211.pdf Size:515K _kexin

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SMD Type Transistors NPN Transistors 2SC5211 ■ Features 1.70 0.1 ● High voltage VCEO=50V. ● Small package for mounting. ● Complementary to 2SA1945 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 4 C

1.1064. 2sc5210.pdf Size:909K _kexin

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SMD Type Transistors NPN Transistors 2SC5210 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=250V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 250 V Emitter - Base Voltag

1.1065. 2sc5086.pdf Size:2609K _kexin

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SMD Type Transistors NPN Transistors 2SC5086 SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 2 1 ■ Features ● Collector Current Capability IC=80mA 3 ● Collector Emitter Voltage VCEO=12V 0.3±0.05 +0.1 0.5 -0.1 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage

1.1066. 2sc5315.pdf Size:353K _kexin

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SMD Type Transistors NPN Transistors 2SC5315 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA ● Collector Emitter Voltage VCEO=5V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto

1.1067. 2sc5182.pdf Size:909K _kexin

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SMD Type Transistors NPN Transistors 2SC5182 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=3V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect

1.1068. 2sc5191.pdf Size:933K _kexin

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SMD Type Transistors NPN Transistors 2SC5191 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 9 Collector

1.1069. 2sc5094.pdf Size:1529K _kexin

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SMD Type Transistors NPN Transistors 2SC5094 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=15mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

1.1070. 2sc5089.pdf Size:1856K _kexin

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SMD Type Transistors NPN Transistors 2SC5089 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=40mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

1.1071. 2sc5259.pdf Size:1007K _kexin

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SMD Type Transistors NPN Transistors 2SC5259 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=15mA 1 2 ● Collector Emitter Voltage VCEO=7V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

1.1072. 2sc5307.pdf Size:877K _kexin

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SMD Type Transistors NPN Transistors 2SC5307 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=400V ● Marking : AL 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emit

1.1073. 2sc5212.pdf Size:889K _kexin

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SMD Type Transistors NPN Transistors 2SC5212 ■ Features 1.70 0.1 ● Low Collector saturation voltage ● High fT fT=180MHz typ ● Excellent liinearity of DC forward current gain 0.42 0.1 ● High collector current ICP=1A 0.46 0.1 ● Complementary to 2SA1946 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Ba

1.1074. 2sc5051.pdf Size:349K _kexin

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SMD Type Transistors NPN Transistors 2SC5051 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=8V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 8 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 50 mA

1.1075. 2sc5785.pdf Size:1442K _kexin

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SMD Type Transistors NPN Transistors 2SC5785 1.70 0.1 ■ Features ● High DC current gain: hFE = 400 to 1000 ● Low collector-emitter saturation voltage ● High-speed switching 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitte

1.1076. 2sc5415.pdf Size:1027K _kexin

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SMD Type Transistors NPN Transistors 2SC5415 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

1.1077. 2sc5227.pdf Size:974K _kexin

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SMD Type Transistors NPN Transistors 2SC5227 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

1.1078. 2sc5548a.pdf Size:1157K _kexin

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SMD Type Transistors NPN Transistors 2SC5548A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High speed switching ● High collector breakdown voltage ● High DC current gain 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sym

1.1079. 2sc5106.pdf Size:1250K _kexin

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SMD Type Transistors NPN Transistors 2SC5106 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector

1.1080. 2sc5254.pdf Size:1019K _kexin

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SMD Type Transistors NPN Transistors 2SC5254 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=40mA ● Collector Emitter Voltage VCEO=7V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

1.1081. 2sc5229.pdf Size:1268K _kexin

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SMD Type Transistors NPN Transistors 2SC5229 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

1.1082. 2sc5214.pdf Size:1175K _kexin

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SMD Type Transistors NPN Transistors 2SC5214 1.70 0.1 ■ Features ● High fT fT=100MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1.5A 0.42 0.1 0.46 0.1 ● Complementary to 2SA1947 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emi

1.1083. 2sc5064.pdf Size:1788K _kexin

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SMD Type Transistors NPN Transistors 2SC5064 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

1.1084. 2sc5019.pdf Size:891K _kexin

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SMD Type Transistors NPN Transistors 2SC5019 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VE

1.1085. 2sc5343uf.pdf Size:1061K _kexin

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SMD Type Transistors NPN Transistors 2SC5343UF ■ Features ● Low collector saturation voltage : VCE=0.25V(Max.) ● Low output capacitance : Cob=2pF(Typ.) ● Complementary to 2SA1980UF 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volt

1.1086. 2sc5218.pdf Size:964K _kexin

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SMD Type Transistors NPN Transistors 2SC5218 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=9V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

1.1087. bc556-558.pdf Size:2019K _kexin

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DIP Type Transistors PNP Transistors BC556 ~ BC558 (KC556 ~ KC558) Unit:mm TO-92 4.8 ± 0.3 3.8 ± 0.3 ■ Features ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-65V/-45V/-30V 0.60 Max 0.45 ± 0.1 0.5 COLLECTOR 1 2 1 3 2 1.Collector BASE 2.Base 1.27 3.Emitter 2.54 3 EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC556

1.1088. 2sc5477.pdf Size:779K _kexin

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SMD Type Transistors NPN Transistors 2SC5477 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

1.1089. 2sc5706.pdf Size:1319K _kexin

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SMD Type Transistors NPN Transistors 2SC5706 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● Collector Current Capability IC=5A ● Collector Emitter Voltage VCEO=80V 0.127 ● High-speed switching. +0.1 0.80-0.1 max ● Low collector-to-emitter saturation voltage ● High allowable power dissipation. + 0.1 1 Base 2.3 0

1.1090. 2sc5177.pdf Size:906K _kexin

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SMD Type Transistors NPN Transistors 2SC5177 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=10mA 1 2 ● Collector Emitter Voltage VCEO=3V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 5 Collect

1.1091. 2sc5342uf.pdf Size:945K _kexin

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SMD Type Transistors NPN Transistors 2SC5342UF ■ Features ●Large collector current : IC=500mA ● Low collector saturation voltage enabling low-voltage operation ● Complementary to 2SA1979UF 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 32 V Emitter -

1.1092. 2sc5336.pdf Size:948K _kexin

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SMD Type Transistors NPN Transistors 2SC5336 SOT-89 Unit:mm 1.70 0.1 4 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter -

1.1093. 2sc5053.pdf Size:873K _kexin

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SMD Type Transistors NPN Transistors 2SC5053 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=50V ● Complementary to 2SA1900 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50

1.1094. 2sc5216.pdf Size:897K _kexin

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SMD Type Transistors NPN Transistors 2SC5216 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

1.1095. 2sc5109.pdf Size:1076K _kexin

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SMD Type Transistors NPN Transistors 2SC5109 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

1.1096. 2sc5338.pdf Size:1021K _kexin

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SMD Type Transistors NPN Transistors 2SC5338 SOT-89 Unit:mm 1.70 0.1 4 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Emitter 2.Base 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 12 V Emitter -

1.1097. 2sc5773.pdf Size:1337K _kexin

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SMD Type Transistors NPN Transistors 2SC5773 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=80mA 1 2 ● Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

1.1098. 2sc5049.pdf Size:342K _kexin

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SMD Type Transistors NPN Transistors 2SC5049 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

1.1099. 2sc5084.pdf Size:1495K _kexin

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SMD Type Transistors NPN Transistors 2SC5084 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=80mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

1.1100. 2sc5069.pdf Size:1204K _kexin

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SMD Type Transistors NPN Transistors 2SC5069 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

1.1101. 2sc5344sf.pdf Size:882K _kexin

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SMD Type Transistors NPN Transistors 2SC5344SF SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High hFE : hFE=100~320 ● Complementary pair with 2SA1981SF 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ P