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2N3708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3708

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 11

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3708

2N3708 PDF:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

2N3708
2N3708

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n370.pdf Size:392K _rca

2N3708
2N3708

5.2. 2n3700.pdf Size:109K _st

2N3708
2N3708

2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratings

5.3. 2n3703.pdf Size:56K _fairchild_semi

2N3708
2N3708

2N3703 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collecto

5.4. 2n3704.pdf Size:56K _fairchild_semi

2N3708
2N3708

2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Em

5.5. 2n3702.pdf Size:59K _fairchild_semi

2N3708
2N3708

2N3702 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Em

5.6. 2n3700_2n3701.pdf Size:108K _central

2N3708
2N3708

DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Col

5.7. 2n3704_2n3705_2n3706.pdf Size:55K _central

2N3708
2N3708

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.8. 2n3700_01.pdf Size:256K _cdil

2N3708
2N3708

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @Ta=

5.9. 2n3704_05.pdf Size:349K _cdil

2N3708
2N3708

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL 2N3704 2N3705 UNIT VCEO Collector Emitter Voltage 30 V Collector Base Volt

5.10. 2n3702_03.pdf Size:243K _cdil

2N3708
2N3708

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM

5.11. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

2N3708
2N3708

5.12. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

2N3708
2N3708

5.13. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

2N3708
2N3708

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Cur

Otros transistores... 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 , 2N3706 , 2N3707 , BEL187 , 2N3709 , 2N371 , 2N3710 , 2N3711 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 .

 


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