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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU214
BU215 .. BUF410AI
BUF410FI .. BUS22BF
BUS22C .. BUW81A
BUW84 .. BUY83
BUY84 .. CD9013J
CD9014 .. CIL157
CIL157A .. CL166A
CL166B .. CPS2540B
CPS2545B .. CSA968
CSA968A .. CSC2688BPL
CSC2688G .. CTP1108
CTP1109 .. D29J6
D29J7 .. D42CU5
D42CU6 .. D64VP4
D64VP5 .. DT400-300
DT400-400 .. DTC015EM
DTC015EUB .. DTL3501
DTL3502 .. ECG2332
ECG2334 .. ED1602C
ED1602D .. ET206
ET359 .. FE4021
FE4022 .. FMG12
FMG13 .. FPC644
FPC828 .. FXT555SM
FXT557 .. GE55821
GE56551 .. GET3
GET3013 .. GSDS50018
GSDS50020 .. GT43
GT44 .. HEPS3035
HEPS3047 .. HSE131
HSE133 .. IMX2
IMX3 .. K2107
K2107A .. KRA161F
KRA163F .. KRC117
KRC117M .. KRC868E
KRC868U .. KSB772-R
KSB772-Y .. KSC5020-R
KSC5020-Y .. KSE13004
KSE13005 .. KT210B
KT210V .. KT347B
KT347V .. KT644G
KT644V .. KT817G9
KT817V .. KT916B
KT918A .. KTC3103A1
KTC3103B1 .. KTX311T
KTX312T .. MD1131F
MD1132 .. MJ14002
MJ14003 .. MJE13003HT
MJE13003HV .. MJF18008
MJF2955 .. MMBT1015
MMBT123S .. MMBTA56L
MMBTA56LT1 .. MP1550A
MP1551 .. MP800
MP801 .. MPS3866
MPS3900 .. MPSW55
MPSW56 .. MT3002
MT3011 .. NA21ZX
NA21ZY .. NB021FZ
NB021H .. NB213YY
NB213Z .. NKT242L
NKT243 .. NR431DF
NR431DG .. NTE2542
NTE2543 .. P217A
P217B .. PDTA114YT
PDTA114YU .. PMD1702K
PMD1703K .. PTB20030
PTB20031 .. RCA8766D
RCA8766E .. RN1908FE
RN1908FS .. RN2962FE
RN2962FS .. S629T
S630T .. SE8520
SE8521 .. SM3174
SM3176 .. SRC1206UF
SRC1207 .. STD826
STD830CP40 .. T1344
T1346 .. TBF869
TBF870 .. TIP32F
TIP33 .. TIX620
TIX621 .. TN5143
TN5172 .. TR21
TR236 .. UN1224
UN1518 .. UPT211
UPT212 .. ZTX107CL
ZTX107CM .. ZTX549
ZTX550 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3708

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 11

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3708

2N3708 PDF doc:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

2N3708
2N3708
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n370.pdf Size:392K _rca

2N3708
2N3708

5.2. 2n3700.pdf Size:109K _st

2N3708
2N3708
2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-emitter voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7V IC Collector current 1 A Total dissipation at Tamb ? 25C 0.5 W Ptot at Tcase ? 25C 1.8 W 1 W at Tcase ? 100C Tstg Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case __max 97 C/W Rthj-amb Thermal resistance junction-ambient __ max 350 C/W 2/7 2N3700

5.3. 2n3703.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3703 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. T

5.4. 2n3702.pdf Size:59K _fairchild_semi

2N3708
2N3708
2N3702 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symb

5.5. 2n3704.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol P

5.6. 2n3704_2n3705_2n3706.pdf Size:55K _central

2N3708
2N3708
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n3700_2n3701.pdf Size:108K _central

2N3708
2N3708
DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation PD 500 mW Power Dissipation (TC=25C) PD 1.8 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance ?JA 350 C/W Thermal Resistance ?JC 97.2 C/W ELECTRICAL CHARACTERISTICS (TA=25C) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V 10 10 nA ICBO VCB=90V, TA=150C 10 10 A IEBO VEB=5.0V 10 10 nA BVCBO IC=100A 140 140 V BVCEO IC=30mA 80 80 V BVEBO IE=100A 7.0 7.0 V VCE(SAT) IC=150mA, IB=15mA 0.2 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.5 0.5 V VBE(SAT) IC=150mA, IB=15mA 1.1

5.8. 2n3702_03.pdf Size:243K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Symbol 2N3702 2N3703 Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Collector Emitter voltage VCEO 25 30 V Collector Base voltage VCBO 40 50 V Emitter Base voltage VEBO 55 V Collector Current (Continuous) IC - 600 - mA Total Power Dissipation Ta = 25?C PD - 625 - mW Derate above 25?C - 5 - mW/?C Operating & Storage Junction Tj,Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth (j-a) - 200 - ?C/W Continental Device India Limited Data Sheet Page 1 of 3 B E C 2N3702 2N3703 ELECTRICAL CHARACT

5.9. 2n3704_05.pdf Size:349K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL 2N3704 2N3705 UNIT VCEO Collector Emitter Voltage 30 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Total Device Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 30 V VCBO Collector Base Voltage IC=100µA, IE=0 50 V Emitter Base Voltage VEBO IE=100µA, IC=0 5.0 V DC Current Gain *hFE V

5.10. 2n3700_01.pdf Size:256K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @Ta=25 deg C PD 500 mW Derate Above 25 deg C 2.85 mW/deg C @TC=25 deg C PD 1.8 W Derate Above 25 deg C 10.6 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 deg C/W Junction to Ambient Rth(j-a) 245 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector-Cut off Current ICBO VCB=90V, IE=0 - 10 nA VCB=90V, IE=0 - 10 uA Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA Collector -Base Voltage VCBO IC=100uA, IE=-0 140 - V Collec

5.11. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

2N3708
2N3708

5.12. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

2N3708
2N3708

5.13. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

2N3708
2N3708
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Current 1.0 Adc IC Total Power Dissipation @ T = +250C(1) W A 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB 0.4 PT @ T = +250C(2) W C 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 2N3057A 0 Operating & Storage Jct Temp Range -55 to +175 C TJ, Tstg 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for T ? +250C. A 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 2N3

Otros transistores... 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 , 2N3706 , 2N3707 , BEL187 , 2N3709 , 2N371 , 2N3710 , 2N3711 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 .

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