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Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU433
BU4508AF .. BUL50B
BUL510 .. BUV18X
BUV19 .. BUX62
BUX63 .. C5T4997
C5T5400 .. CDQ10053
CDQ10054 .. CIL769
CIL771 .. CMMT495
CMMT551 .. CS718A
CS720A .. CSB772E
CSB772P .. CSD1047OF
CSD1047YF .. CZD1952
CZD2983 .. D38L4
D38L4-6 .. D44TD3
D44TD4 .. DC5441
DC5442 .. DTA114YCA
DTA114YE .. DTC124XCA
DTC124XE .. DW7039
DW7050 .. ECG324
ECG325 .. ERS275
ERS301 .. F121
F121A .. FJP3305
FJP3307D .. FMMT4250
FMMT4250A .. FT2384
FT2551 .. FZTA14
FZTA42 .. GES3962
GES4058 .. GFT25R
GFT31 .. GT250/8C
GT250/8D .. HA7207
HA7501 .. HMBTH10
HMJE13001 .. HUN2237
HUN2238 .. JC501P
JC501Q .. KDY24
KDY25 .. KRA721E
KRA721F .. KRC651U
KRC652E .. KSA1625L
KSA1625M .. KSC2334-Y
KSC2335 .. KSD1588-O
KSD1588-R .. KSR1011
KSR1012 .. KT3140V
KT3142A .. KT603D
KT603E .. KT8110V
KT8112A .. KT838B
KT839A .. KTA1517
KTA1517S .. KTC5001L
KTC5027 .. MA0491
MA0492 .. ME8002
ME8003 .. MJ480
MJ481 .. MJE3312
MJE3370 .. MM3725
MM3726 .. MMBT4141
MMBT4142 .. MMUN2113LT1
MMUN2113LT2 .. MP3638
MP3638A .. MPQ4888
MPQ4889 .. MPS6602
MPS6651 .. MRF243
MRF244 .. MUN5311DW
MUN5311DW1 .. NA42WG
NA42WH .. NB121F
NB121FH .. NB312Z
NB313E .. NPS3564
NPS3565 .. NSS12100UW
NSS12100XV6T1G .. OC410
OC41N .. PBSS301ND
PBSS301NX .. PDTC144VU
PDTC144WE .. PN3725
PN3742 .. PZT195A
PZT2222A .. RN1113CT
RN1113FS .. RN2118MFV
RN2119MFV .. RS-2013
RS1049 .. SCE540
SCH2202 .. SFT317
SFT319 .. SQ2222A
SQ2222AF .. ST5771-2
ST6008 .. SUR539J
SUR540EF .. T2580
T2588 .. TI459
TI460 .. TIP642
TIP645 .. TN2907
TN2907A .. TP3827
TP3866 .. UMB1N
UMB2N .. UN6113
UN6114 .. ZDT694
ZDT749 .. ZTX321M
ZTX322 .. ZXTN2010A
ZXTN2010G .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3708

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 11

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3708

2N3708 PDF doc:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

2N3708
2N3708
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n370.pdf Size:392K _rca

2N3708
2N3708

5.2. 2n3700.pdf Size:109K _st

2N3708
2N3708
2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-emitter voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7V IC Collector current 1 A Total dissipation at Tamb ? 25C 0.5 W Ptot at Tcase ? 25C 1.8 W 1 W at Tcase ? 100C Tstg Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case __max 97 C/W Rthj-amb Thermal resistance junction-ambient __ max 350 C/W 2/7 2N3700

5.3. 2n3703.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3703 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. T

5.4. 2n3702.pdf Size:59K _fairchild_semi

2N3708
2N3708
2N3702 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symb

5.5. 2n3704.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol P

5.6. 2n3704_2n3705_2n3706.pdf Size:55K _central

2N3708
2N3708
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n3700_2n3701.pdf Size:108K _central

2N3708
2N3708
DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation PD 500 mW Power Dissipation (TC=25C) PD 1.8 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance ?JA 350 C/W Thermal Resistance ?JC 97.2 C/W ELECTRICAL CHARACTERISTICS (TA=25C) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V 10 10 nA ICBO VCB=90V, TA=150C 10 10 A IEBO VEB=5.0V 10 10 nA BVCBO IC=100A 140 140 V BVCEO IC=30mA 80 80 V BVEBO IE=100A 7.0 7.0 V VCE(SAT) IC=150mA, IB=15mA 0.2 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.5 0.5 V VBE(SAT) IC=150mA, IB=15mA 1.1

5.8. 2n3702_03.pdf Size:243K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Symbol 2N3702 2N3703 Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Collector Emitter voltage VCEO 25 30 V Collector Base voltage VCBO 40 50 V Emitter Base voltage VEBO 55 V Collector Current (Continuous) IC - 600 - mA Total Power Dissipation Ta = 25?C PD - 625 - mW Derate above 25?C - 5 - mW/?C Operating & Storage Junction Tj,Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth (j-a) - 200 - ?C/W Continental Device India Limited Data Sheet Page 1 of 3 B E C 2N3702 2N3703 ELECTRICAL CHARACT

5.9. 2n3704_05.pdf Size:349K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL 2N3704 2N3705 UNIT VCEO Collector Emitter Voltage 30 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Total Device Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 30 V VCBO Collector Base Voltage IC=100µA, IE=0 50 V Emitter Base Voltage VEBO IE=100µA, IC=0 5.0 V DC Current Gain *hFE V

5.10. 2n3700_01.pdf Size:256K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @Ta=25 deg C PD 500 mW Derate Above 25 deg C 2.85 mW/deg C @TC=25 deg C PD 1.8 W Derate Above 25 deg C 10.6 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 deg C/W Junction to Ambient Rth(j-a) 245 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector-Cut off Current ICBO VCB=90V, IE=0 - 10 nA VCB=90V, IE=0 - 10 uA Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA Collector -Base Voltage VCBO IC=100uA, IE=-0 140 - V Collec

5.11. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

2N3708
2N3708

5.12. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

2N3708
2N3708

5.13. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

2N3708
2N3708
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Current 1.0 Adc IC Total Power Dissipation @ T = +250C(1) W A 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB 0.4 PT @ T = +250C(2) W C 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 2N3057A 0 Operating & Storage Jct Temp Range -55 to +175 C TJ, Tstg 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for T ? +250C. A 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 2N3

Otros transistores... 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 , 2N3706 , 2N3707 , BEL187 , 2N3709 , 2N371 , 2N3710 , 2N3711 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 .

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