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2N3708
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Liste
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3708

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 11

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3708

2N3708 PDF doc:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

2N3708
2N3708
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n370.pdf Size:392K _rca

2N3708
2N3708

5.2. 2n3700.pdf Size:109K _st

2N3708
2N3708
2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-emitter voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7V IC Collector current 1 A Total dissipation at Tamb ? 25C 0.5 W Ptot at Tcase ? 25C 1.8 W 1 W at Tcase ? 100C Tstg Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case __max 97 C/W Rthj-amb Thermal resistance junction-ambient __ max 350 C/W 2/7 2N3700

5.3. 2n3702.pdf Size:59K _fairchild_semi

2N3708
2N3708
2N3702 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symb

5.4. 2n3703.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3703 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. T

5.5. 2n3704.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol P

5.6. 2n3704_2n3705_2n3706.pdf Size:55K _central

2N3708
2N3708
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n3700_2n3701.pdf Size:108K _central

2N3708
2N3708
DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation PD 500 mW Power Dissipation (TC=25C) PD 1.8 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance ?JA 350 C/W Thermal Resistance ?JC 97.2 C/W ELECTRICAL CHARACTERISTICS (TA=25C) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V 10 10 nA ICBO VCB=90V, TA=150C 10 10 A IEBO VEB=5.0V 10 10 nA BVCBO IC=100A 140 140 V BVCEO IC=30mA 80 80 V BVEBO IE=100A 7.0 7.0 V VCE(SAT) IC=150mA, IB=15mA 0.2 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.5 0.5 V VBE(SAT) IC=150mA, IB=15mA 1.1

5.8. 2n3700_01.pdf Size:256K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @Ta=25 deg C PD 500 mW Derate Above 25 deg C 2.85 mW/deg C @TC=25 deg C PD 1.8 W Derate Above 25 deg C 10.6 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 deg C/W Junction to Ambient Rth(j-a) 245 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector-Cut off Current ICBO VCB=90V, IE=0 - 10 nA VCB=90V, IE=0 - 10 uA Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA Collector -Base Voltage VCBO IC=100uA, IE=-0 140 - V Collec

5.9. 2n3702_03.pdf Size:243K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Symbol 2N3702 2N3703 Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Collector Emitter voltage VCEO 25 30 V Collector Base voltage VCBO 40 50 V Emitter Base voltage VEBO 55 V Collector Current (Continuous) IC - 600 - mA Total Power Dissipation Ta = 25?C PD - 625 - mW Derate above 25?C - 5 - mW/?C Operating & Storage Junction Tj,Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth (j-a) - 200 - ?C/W Continental Device India Limited Data Sheet Page 1 of 3 B E C 2N3702 2N3703 ELECTRICAL CHARACT

5.10. 2n3704_05.pdf Size:349K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL 2N3704 2N3705 UNIT VCEO Collector Emitter Voltage 30 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Total Device Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 30 V VCBO Collector Base Voltage IC=100µA, IE=0 50 V Emitter Base Voltage VEBO IE=100µA, IC=0 5.0 V DC Current Gain *hFE V

5.11. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

2N3708
2N3708

5.12. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

2N3708
2N3708

5.13. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

2N3708
2N3708
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Current 1.0 Adc IC Total Power Dissipation @ T = +250C(1) W A 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB 0.4 PT @ T = +250C(2) W C 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 2N3057A 0 Operating & Storage Jct Temp Range -55 to +175 C TJ, Tstg 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for T ? +250C. A 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 2N3

Otros transistores... 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 , 2N3706 , 2N3707 , BEL187 , 2N3709 , 2N371 , 2N3710 , 2N3711 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 .

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