Todos los transistores



Introduzca al menos 3 números o letras
 
2N3708
  2N3708
  2N3708
  2N3708
 
2N3708
  2N3708
  2N3708
  2N3708
 
 
Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3708 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3708

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.03

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 11

Ganancia de corriente contínua (hfe): 45

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3708

2N3708 PDF doc:

1.1. 2n3707_2n3708_2n3709_2n3710_2n3711.pdf Size:82K _central

2N3708
2N3708
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

5.1. 2n370.pdf Size:392K _rca

2N3708
2N3708

5.2. 2n3700.pdf Size:109K _st

2N3708
2N3708
2N3700 General purpose amplifiers Description The 2N3700 is silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is intended for small signal, low noise industrial applications. TO-18 Internal schematic diagram Order codes Part Number Marking Package Packing 2N3700 2N3700 TO-18 Bag November 2006 Rev 2 1/7 www.st.com 7 Electrical ratings 2N3700 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit VCBO Collector-emitter voltage (IE = 0) 140 V VCEO Collector-emitter voltage (IB = 0) 80 V VEBO Emitter-base voltage (IC = 0) 7V IC Collector current 1 A Total dissipation at Tamb ? 25C 0.5 W Ptot at Tcase ? 25C 1.8 W 1 W at Tcase ? 100C Tstg Storage temperature -65 to 200 C TJ Max. operating junction temperature 200 C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case __max 97 C/W Rthj-amb Thermal resistance junction-ambient __ max 350 C/W 2/7 2N3700

5.3. 2n3703.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3703 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -30 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. T

5.4. 2n3702.pdf Size:59K _fairchild_semi

2N3708
2N3708
2N3702 PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symb

5.5. 2n3704.pdf Size:56K _fairchild_semi

2N3708
2N3708
2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol P

5.6. 2n3704_2n3705_2n3706.pdf Size:55K _central

2N3708
2N3708
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.7. 2n3700_2n3701.pdf Size:108K _central

2N3708
2N3708
DATA SHEET 2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700 SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation PD 500 mW Power Dissipation (TC=25C) PD 1.8 W Operating and Storage Junction Temperature TJ,Tstg -65 to +200 C Thermal Resistance ?JA 350 C/W Thermal Resistance ?JC 97.2 C/W ELECTRICAL CHARACTERISTICS (TA=25C) 2N3700 2N3701 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=90V 10 10 nA ICBO VCB=90V, TA=150C 10 10 A IEBO VEB=5.0V 10 10 nA BVCBO IC=100A 140 140 V BVCEO IC=30mA 80 80 V BVEBO IE=100A 7.0 7.0 V VCE(SAT) IC=150mA, IB=15mA 0.2 0.2 V VCE(SAT) IC=500mA, IB=50mA 0.5 0.5 V VBE(SAT) IC=150mA, IB=15mA 1.1

5.8. 2n3702_03.pdf Size:243K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS DIM MIN MAX A 4,32 5,33 B 4,45 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 1,40 H 1,14 1,53 K 12,70 – L 1.982 2.082 ALL DIMENSIONS IN M.M. 1 2 3 1 = EMITTER 2 = COLLECTOR 3 = BASE ABSOLUTE MAXIMUM RATINGS Rating Symbol 2N3702 2N3703 Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Rating Symbol Units Collector Emitter voltage VCEO 25 30 V Collector Base voltage VCBO 40 50 V Emitter Base voltage VEBO 55 V Collector Current (Continuous) IC - 600 - mA Total Power Dissipation Ta = 25?C PD - 625 - mW Derate above 25?C - 5 - mW/?C Operating & Storage Junction Tj,Tstg -55 to +150 ?C Temperature Range THERMAL RESISTANCE Junction to Ambient Rth (j-a) - 200 - ?C/W Continental Device India Limited Data Sheet Page 1 of 3 B E C 2N3702 2N3703 ELECTRICAL CHARACT

5.9. 2n3704_05.pdf Size:349K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705 TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" B C E Amplifier Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL 2N3704 2N3705 UNIT VCEO Collector Emitter Voltage 30 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 600 mA Total Device Dissipation at Ta=25?C PD 625 mW Derate Above 25?C 5.0 mW/?C Operating And Storage Junction Tj, Tstg - 55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth (j-a) Junction to Ambient in free air 200 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 30 V VCBO Collector Base Voltage IC=100µA, IE=0 50 V Emitter Base Voltage VEBO IE=100µA, IC=0 5.0 V DC Current Gain *hFE V

5.10. 2n3700_01.pdf Size:256K _cdil

2N3708
2N3708
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 140 V Collector -Emitter Voltage VCEO 80 V Emitter -Base Voltage VEBO 7.0 V Collector Current IC 1.0 A Power Dissipation @Ta=25 deg C PD 500 mW Derate Above 25 deg C 2.85 mW/deg C @TC=25 deg C PD 1.8 W Derate Above 25 deg C 10.6 mW/deg C Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 deg C/W Junction to Ambient Rth(j-a) 245 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Collector-Cut off Current ICBO VCB=90V, IE=0 - 10 nA VCB=90V, IE=0 - 10 uA Emitter-Cut off Current IEBO VEB=5V, IC=0 - 10 nA Collector -Base Voltage VCBO IC=100uA, IE=-0 140 - V Collec

5.11. 2n3702-6_mps3702-6.pdf Size:299K _microelectronics

2N3708
2N3708

5.12. 2n3707-09_2n3710-11_2n4058-59_2n4060-62.pdf Size:137K _microelectronics

2N3708
2N3708

5.13. 2n3019_2n3057_2n3700.pdf Size:71K _microsemi

2N3708
2N3708
TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector Current 1.0 Adc IC Total Power Dissipation @ T = +250C(1) W A 2N3019; 2N3019S 0.8 2N3057A 0.4 TO- 18* (TO-206AA) 2N3700 0.5 2N3700 2N3700UB 0.4 PT @ T = +250C(2) W C 2N3019; 2N3019S 5.0 2N3057A 1.8 2N3700 1.8 TO-46* (TO-206AB) 2N3700UB 1.16 2N3057A 0 Operating & Storage Jct Temp Range -55 to +175 C TJ, Tstg 1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for T ? +250C. A 3 PIN SURFACE MOUNT* 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 2N3

Otros transistores... 2N3701 , 2N3702 , 2N3703 , 2N370-33 , 2N3704 , 2N3705 , 2N3706 , 2N3707 , BEL187 , 2N3709 , 2N371 , 2N3710 , 2N3711 , 2N3712 , 2N3712S , 2N3713 , 2N371-33 .

 

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com