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2SA1096A .. 2SA1291
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2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
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2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
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2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
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BC251 .. BC341-6
BC342 .. BC487A
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BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
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BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N3904 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N3904

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.31

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.2

Temperatura operativa máxima (Tj), °C: 135

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300

Capacitancia de salida (Cc), pF: 4

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N3904

2N3904 PDF doc:

1.1. 2n3903_2n3904.pdf Size:212K _motorola

2N3904
2N3904
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N3903/D General Purpose Transistors 2N3903 NPN Silicon * 2N3904 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 Rating Symbol Value Unit TO92 (TO226AA) CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 200 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS* Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W * Indicates Data in addition to JEDEC Requirements. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHAR

1.2. 2n3904_3.pdf Size:51K _philips

2N3904
2N3904
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N3904 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 15 Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter High-speed switching. DESCRIPTION 1 handbook, halfpage 1 2 NPN switching transistor in a TO-92; SOT54 plastic 3 2 package. PNP complement: 2N3906. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current (DC) - 200 mA ICM peak collector current - 300 mA IBM peak base current - 100 mA Ptot total power

1.3. 2n3904.pdf Size:60K _st

2N3904
2N3904
2N3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment 2N3904 2N3904 TO-92 / Bulk 2N3904-AP 2N3904 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS 2N3906 TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 200 mA P Total Dissipation at T = 25 oC 625 mW tot C o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/5 February 2003 2N3904 THERMAL DATA o Rthj-amb Thermal Resistance Junction-Ambient Max 200 C/W o R Thermal Resistance Junction-Case

1.4. 2n3904.pdf Size:169K _fairchild_semi

2N3904
2N3904
October 2011 2N3904 / MMBT3904 / PZT3904 NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. 2N3904 PZT3904 MMBT3904 C C E E C B TO-92 SOT-23 SOT-223 B Mark:1A EBC Absolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta =

1.5. 2n3904_mmbt3904_pzt3904.pdf Size:111K _fairchild_semi

2N3904
2N3904
2N3904 MMBT3904 PZT3904 C C E E C C TO-92 B B SOT-23 B E SOT-223 Mark: 1A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max

1.6. 2n3903_2n3904.pdf Size:66K _central

2N3904
2N3904
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n3904(to-92).pdf Size:260K _mcc

2N3904
2N3904
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N3904 Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mW of Power Disspation and 200mA Ic Epoxy meets UL 94 V-0 flammability rating Purpose Amplifier Moisure Sensitivity Level 1 Through Hole Package Marking:Type number TO-92 Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* 40 Vdc (IC=1.0mAdc, IB=0) V(BR)CBO Collector-Base Breakdown Voltage 60 Vdc B (IC=10Adc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 6.0 Vdc (IE=10Adc, IC=0) IBL Base Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ICEX Collector Cutoff Current 50 nAdc (VCE=30Vdc, VBE=3.0Vdc) ON CHARACTERISTICS C hFE DC Current Gain* (

1.8. 2n3903_2n3904.pdf Size:177K _onsemi

2N3904
2N3904
2N3903, 2N3904 General Purpose Transistors NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc 1 Collector-Base Voltage VCBO 60 Vdc EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc Total Device Dissipation PD @ TA = 25C 625 mW Derate above 25C 5.0 mW/C TO-92 CASE 29 Total Device Dissipation PD STYLE 1 @ TC = 25C 1.5 W Derate above 25C 12 mW/C 1 1 2 2 Operating and Storage Junction TJ, Tstg -55 to +150 C 3 3 Temperature Range STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL THERMAL CHARACTERISTICS (Note 1) AMMO PACK Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W MARKING DIAGRAMS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation ab

1.9. 2n3904.pdf Size:214K _utc

2N3904
2N3904
UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PC(MAX)=625mW * Complementary to 2N3906 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3904L-T92-B 2N3904G-T92-B TO-92 E B C Tape Box 2N3904L-T92-K 2N3904G-T92-K TO-92 E B C Bulk 2N3904L-T92-R 2N3904G-T92-R TO-92 E B C Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R201-027, D 2N3904 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those va

1.10. 2n3904.pdf Size:162K _auk

2N3904
2N3904
2N3904 NPN Silicon Transistor Descriptions PIN Connection • General small signal application C • Switching application Features B • Low collector saturation voltage • Collector output capacitance E • Complementary pair with 2N3906 TO-92 Ordering Information Type NO. Marking Package Code 2N3904 2N3904 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10?A, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10?A, IC=0 6 - - V Collector cut-off current ICEX VCE=30V, VEB=3V

1.11. 2n3904.pdf Size:378K _secos

2N3904
2N3904
2N3904 0.2A, 60V NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW (Ta=25°C) G H 1Emitter 1 1 1 Collector Current ICM: 200mA 2Base 2 2 2 Collector – Base Voltage V(BR)CBO: 60V 3Collector 3 3 3 J A D CLASSIFICATION OF hFE(1) Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank 2N3904-O 2N3904-Y 2N3904-G B 4.30 4.70 K C 12.70 - Range 100~200 200~300 300~400 D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO 60 V Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 V A Collector Current -Continuous IC 0.2 Cpllector Power Dissipation PC 625 mW Junction, Storage Te

1.12. 2n3904.pdf Size:51K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3906. N 1.00 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 9. 12 Revision N

1.13. 2n3904v.pdf Size:92K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current DIM MILLIMETERS 2 _ : ICEX=50nA(Max.), IBL=50nA(Max.) A 1.2 +0.05 _ B 0.8 +0.05 @VCE=30V, VEB=3V. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Excellent DC Current Gain Linearity. _ E 1.2 + 0.05 Low Saturation Voltage _ G 0.8 0.05 + H 0.40 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. _ J 0.12 + 0.05 _ K 0.2 + 0.05 Low Collector Output Capacitance P 5 : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906V. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VSM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking PC * Collector Power Dissipation 100 mW Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z C 2003. 12. 12 Revision

1.14. 2n3904e.pdf Size:91K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B DIM MILLIMETERS FEATURES _ + A 1.60 0.10 D Low Leakage Current _ + 2 B 0.85 0.10 _ + C 0.70 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.27+0.10/-0.05 _ @VCE=30V, VEB=3V. E 1.60 0.10 + _ + 1.00 0.10 G Excellent DC Current Gain Linearity. H 0.50 _ + J 0.13 0.05 Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. J Low Collector Output Capacitance : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906E. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT ESM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking PC * Collector Power Dissipation 100 mW Type Name Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Z C 2003. 12. 12 Revision No :

1.15. 2n3904c.pdf Size:73K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Excellent DC Current Gain Linearity. D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H 0.45 _ Low Collector Output Capacitance H J 14.00 + 0.50 K 0.55 MAX F F : Cob=4pF(Max.) @VCB=5V. L 2.30 M 0.45 MAX Complementary to 2N3906C. N 1.00 1 2 3 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT TO-92 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1994. 2.

1.16. 2n3904s.pdf Size:410K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 Low Leakage Current C 1.30 MAX 2 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 @VCE=30V, VEB=3V. 1 G 1.90 H 0.95 Excellent DC Current Gain Linearity. J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. M 0.20 MIN N 1.00+0.20/-0.10 Low Collector Output Capacitance P 7 : Cob=4pF(Max.) @VCB=5V. M Complementary to 2N3906S. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT SOT-23 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA Marking Lot No. PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Type Name ZC Tstg -5

1.17. 2n3904a.pdf Size:657K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current N DIM MILLIMETERS : ICEX=50nA(Max.), IBL=50nA(Max.) A 4.70 MAX E K B 4.80 MAX @VCE=30V, VEB=3V. G C 3.70 MAX D Low Saturation Voltage D 0.45 E 1.00 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. F 1.27 G 0.85 Low Collector Output Capacitance H 0.45 _ : Cob=4pF(Max.) @VCB=5V. H J 14.00 + 0.50 K 0.55 MAX F F Complementary to 2N3906A. L 2.30 M 0.45 MAX N 1.00 1 2 3 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25 ) 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V TO-92 VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA IB Base Current 50 mA 625 mW Ta=25 Collector Power PC Dissipation 1.5 W Tc=25 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 2002. 2. 1 Revision No : 0 1/5 A J C L M 2N3904A E

1.18. 2n3904u.pdf Size:51K _kec

2N3904
2N3904
SEMICONDUCTOR 2N3904U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E M B M DIM MILLIMETERS FEATURES _ A + 2.00 0.20 D 2 Low Leakage Current _ + B 1.25 0.15 _ + C 0.90 0.10 : ICEX=50nA(Max.), IBL=50nA(Max.) 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 @VCE=30V, VEB=3V. G 0.65 Excellent DC Current Gain Linearity. H 0.15+0.1/-0.06 J 1.30 Low Saturation Voltage K 0.00-0.10 L 0.70 : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. H _ + M 0.42 0.10 Low Collector Output Capacitance N 0.10 MIN N N K : Cob=4pF(Max.) @VCB=5V. Complementary to 2N3906U. 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT USM VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA Marking IB Base Current 50 mA PC * Collector Power Dissipation 100 mW Lot No. Tj Junction Temperature 150 Tstg -55 150 Storag

1.19. 2n3904.pdf Size:307K _lge

2N3904
2N3904
2N3904(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10?A, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 40 V Emitter-base breakdown vol

1.20. 2n3904.pdf Size:612K _wietron

2N3904
2N3904
2N3904 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 200 mAdc PD 625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 40 Vdc - Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 60 Vdc - Vdc V(BR)EBO 6.0 Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) uAdc ICE0 Collector Cutoff Current (V = 40 Vdc, I =0) - 0.1 CE B - ICBO uAdc 0.1 Collector Cutoff Current (V = 60 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 5.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw 2N3904 ELECTRICAL CHARACTERISTICS (T

1.21. h2n3904.pdf Size:50K _hsmc

2N3904
2N3904
Spec. No. : HE6218 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2005.01.14 MICROELECTRONICS CORP. Page No. : 1/5 H2N3904 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N3904 is designed for general purpose switching and amplifier applications. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....................................................................................................

Otros transistores... 2N389A-1 , 2N38A , 2N39 , 2N3900 , 2N3900A , 2N3901 , 2N3902 , 2N3903 , A1015 , 2N3904CSM , 2N3904DCSM , 2N3905 , 2N3905CSM , 2N3906 , 2N3906CSM , 2N3907 , 2N3908 .

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