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MJ12003 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJ12003

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100

Tensión colector-base (Ucb): 0

Tensión colector-emisor (Uce): 1500

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 4

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 2

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 10

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar MJ12003

MJ12003 PDF:

1.1. mj12003.pdf Size:100K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12003 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for use in CRT deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V

4.1. mj12002.pdf Size:200K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12002 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Forward Bias safe Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitte

4.2. mj12005.pdf Size:196K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12005 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Safe Operation Area APPLICATIONS ·Designed for use in deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Cont

4.3. mj12004.pdf Size:202K _inchange_semiconductor

MJ12003
MJ12003

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12004 DESCRIPTION · Collector-Emitter Voltage- VCEX = 1500V ·Safe Operation Area ·Switching Time with Inductive Load APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEX Collector-Emitter Voltage 1500 V

Otros transistores... MJ11028 , MJ11029 , MJ11030 , MJ11031 , MJ11032 , MJ11033 , MJ1200 , MJ12002 , BF494 , MJ12004 , MJ12005 , MJ1201 , MJ12010 , MJ12020 , MJ12021 , MJ12022 , MJ13014 .

 


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