MJE703T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: MJE703T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
Tensión colector-base (Ucb): 80
Tensión colector-emisor (Uce): 80
Tensión emisor-base (Ueb): 5
Corriente del colector DC máxima (Ic): 4
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft):
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 100
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de transistor bipolar MJE703T
MJE703T
PDF doc:
1.1. mje703t.pdf  Size:235K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE703T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-80 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-2A
·Complement to Type MJE803T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 50 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 2.5 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE703T
ELECTRICAL CHARAC |
4.1. mje703.pdf Size:127K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE703
DESCRIPTION
·Collector–Emitter Sustaining Voltage—
: VCEO(SUS) = -80 V
·DC Current Gain—
: hFE = 750(Min) @ IC= -2 A
= 100(Min) @ IC= -4A
·Complement to Type MJE803
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -1 A
Collector Power Dissipation
PC TC=25? 40 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 3.13 ?/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE703
ELECTRICA |
5.1. mje700re.pdf Size:256K _motorola  |
 | Order this document
MOTOROLA
by MJE700/D
SEMICONDUCTOR TECHNICAL DATA
PNP
MJE700,T
Plastic Darlington
Complementary Silicon Power
MJE702
Transistors
MJE703
. . . designed for generalpurpose amplifier and lowspeed switching applications.
NPN
High DC Current Gain
MJE800,T
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Resistors to Limit Leakage
MJE802
Multiplication
Choice of Packages
IIIIIIIIIIIIIIIIIIIIIII
MJE700 and MJE800 series
MJE803
T0220AB, MJE700T and MJE800T
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIII IIII III
IIIII IIII
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIII IIII III
IIIII IIII
MAXIMUM RATINGS
4.0 AMPERE
IIIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIII IIII III
IIIII IIII
MJE702
DARLINGTON
MJE703
IIIIIIIIIII IIII III
IIIIIIIIIII IIII III
IIIII IIII
IIIII IIII
POWER TRANSISTORS
MJE700,T
MJE802
COMPLEMENTARY
IIIIIIIIIII IIII III
IIIIIIIIIII IIII III
IIIIIIIIIII IIII III
IIIII IIII
IIIII IIII
IIIII IIII
M |
5.2. mje700.pdf Size:51K _fairchild_semi  |
 | MJE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
High DC Current Gain : hFE= 750 (Min.) @ IC= -1.5 and -2.0A DC
Complement to MJE800/801/802/803
TO-126
1
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Equivalent Circuit
C
Sym- Unit
Parameter Value
bol s
VCBO Collector- Base Voltage : MJE700/701 - 60 V
: MJE702/703 - 80 V
B
VCEO Collector-Emitter Voltage : MJE700/701 - 60 V
: MJE702/703 - 80 V
VEBO Emitter- Base Voltage - 5 V
IC Collector Current - 4 A
R1 R2
IB Base Current - 0.1 A
R1 ? 10k? E
PC Collector Dissipation (TC=25C) 40 W R2 ? 0.6k?
TJ Junction Temperature 150 C
TSTG Storage Temperature - 55 ~ 150 C
Electrical Characteristics TC=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCEO Collector-Emitter Breakdown Voltage
: MJE700/701 IC = - 10mA, IB = 0 -60 V
: MJE702/703 -80 V
ICEO Collector |
5.3. mje700.pdf Size:228K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE700
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-60 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-1.5 A
·Complement to Type MJE800
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 40 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 3.13 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE700
ELECTRICAL CHARA |
5.4. mje701.pdf Size:229K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE701
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-60 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-2 A
·Complement to Type MJE801
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 40 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 3.13 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE701
ELECTRICAL CHARACT |
5.5. mje701t.pdf Size:235K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE701T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-60 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-2A
·Complement to Type MJE801T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 50 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 2.5 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE701T
ELECTRICAL CHARAC |
5.6. mje700t.pdf Size:235K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE700T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-60 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-1.5A
·Complement to Type MJE800T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 50 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 2.5 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE700T
ELECTRICAL CHAR |
5.7. mje702t.pdf Size:235K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE702T
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO =-80 V
·DC Current Gain—
: hFE = 750(Min) @ IC=-2A
·Complement to Type MJE802T
APPLICATIONS
·Designed for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -80 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -4 A
IBB Base Current -0.1 A
Collector Power Dissipation
PC TC=25? 50 W
Junction Temperature 150 ?
Ti
Storage Temperature Range -55~150 ?
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
Thermal Resistance, Junction to Case 2.5 ?/W
Rth j-c
isc Website:www.iscsemi.cn
www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Darlington Power Transistor MJE702T
ELECTRICAL CHARAC |
Otros transistores... MJE6045
, MJE700
, MJE700T
, MJE701
, MJE701T
, MJE702
, MJE702T
, MJE703
, AC125
, MJE710
, MJE711
, MJE712
, MJE720
, MJE721
, MJE722
, MJE800
, MJE800T
.
|
