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2SB522-2 .. 2SB713
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2SC1070B .. 2SC1279S
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2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MMBT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 160

Tensión colector-emisor (Uce): 150

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: SOT23

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MMBT5401 PDF doc:

1.1. mmbt5401.pdf Size:189K _motorola

MMBT5401
MMBT5401
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 150 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 160 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARA

1.2. mmbt5401.pdf Size:67K _fairchild_semi

MMBT5401
MMBT5401
MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BVCEO Collec

1.3. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi

MMBT5401
MMBT5401
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.4. mmbt5401.pdf Size:121K _diodes

MMBT5401
MMBT5401
MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary NPN Type Available (MMBT5551) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Lead, Halogen and Antimony Free, RoHS Compliant Terminal Connections: See Diagram "Green" Device (Notes 2 and 3) Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitte

1.5. mmbt5401_2.pdf Size:162K _mcc

MMBT5401
MMBT5401
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: 2L Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) SOT-23 Epoxy meets UL 94 V-0 flammability rating A Moisure Sensitivity Level 1 D O C Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units B C OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage 150 --- Vdc B E (IC=1.0mAdc, IB=0) F E V(BR)CBO Collector-Base Breakdown Voltage 160 --- Vdc (IC=100uAdc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc (IE=10uAdc, IC=0) GH J ICBO Collector Cutoff Current --- 0

1.6. mmbt5401lt1-d.pdf Size:115K _onsemi

MMBT5401
MMBT5401
MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the DIAGRAM Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS 2L M G SOT-23 (TO-236) Characteristic Symbol Max Unit G CASE 318 1 Total Device Dissipation PD 225 mW STYLE 6 FR-5 Board (Note 1) TA = 25C Derate Above 25C 1.8 mW/C 2L = Specific Device Code M = Date Code* Thermal Resistance, RqJA 556 C/W G = Pb-Free Package J

1.7. mmbt5401.pdf Size:99K _utc

MMBT5401
MMBT5401
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel MARKING 2L. G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-011.H MMBT5401 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25?) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and

1.8. mmbt5401w.pdf Size:226K _secos

MMBT5401
MMBT5401
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING: K4M 1 Millimeter Millimeter REF. REF. Base Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. 2 C 1.15 1.35 J 0.08 0.25 Emitter D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current-Continuous IC -200 mA Collector Power Dissipation PC 200 mW Thermal Resistance, Junction to Ambient R?JA 625 °C/W Opterating & Storage Temperature T

1.9. mmbt5401.pdf Size:111K _secos

MMBT5401
MMBT5401
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symbol Ratings Unit A 2.80 3.00 G 0.10 REF. Collector to Emitter Voltage VCEO -150 V B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 Collector to Base Voltage VCBO -160 V D 0.90 1.15 K 0.5 REF. Emitter to Base Voltage VEBO -5.0 V E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 Collector Current - Continuous IC -500 mA THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit TA = 25°C 225 mW Total Power Dissipation PD Derate above 25°C 1.8 mW / ? Thermal Resistance, Junction to Ambient R?JA 556 ? / W Alumina Substrate,(2) TA = 25°C 300 mW Total Power Dissipation PD Derate above 25°C 2.4

1.10. mmbt5401.pdf Size:373K _htsemi

MMBT5401
MMBT5401
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A hFE1 VCE= -5V, IC= -1mA 80 DC curre

1.11. mmbt5401.pdf Size:295K _gsme

MMBT5401
MMBT5401
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -150 Vdc ???-????? Collector-Base Voltage VCBO -160 Vdc ???-???? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current—Continuous Ic -500 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25????? 25? 1.8 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R ?JA 556 ?/W ?? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????(2) TA=25? Derate above25? ?? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg 150?, -55

1.12. mmbt5401.pdf Size:194K _lge

MMBT5401
MMBT5401
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A

1.13. mmbt5401.pdf Size:497K _wietron

MMBT5401
MMBT5401
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc) Collector-Emitter Saturation Voltage VCE(sat) -0.2 Vdc (IC=-10mAdc, IB=-1.0mAdc) - -0.5 (IC=-50mAdc, IB=-5.0mAdc) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) VBE(sat) - -1.0 Vdc (IC=-50mAdc, IB=-5.0mAdc) -1.0 SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product fT MHz 100 300 ( -10 VCE=-10Vdc, f=100MHz) IC mVdc, Output Capacitance Cobo PF 6.0 ( VCB -10 IE=0, f=1.0MHz) V dc, Small Signal Current Gain 200 40 h fe ( -1.0 V IC mVdc, CE=-10Vdc, f=1.0kHz) Noise Figure dB 8.0 NF V ( -200 dc, IC uA CE=-5.0Vdc, Rs=10 , f=1.0kHz)

1.14. mmbt5401lt1.pdf Size:325K _willas

MMBT5401
MMBT5401
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • LeaM-MBT5401LT1 2L 3000/Tape&Reel d free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free product for pa

Otros transistores... MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , MMBT5400R , BD679 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R , MMBT5551 .

 

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