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2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
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2SC1732 .. 2SC1950
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2SC2669 .. 2SC2859-O
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2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MMBT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 160

Tensión colector-emisor (Uce): 150

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: SOT23

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MMBT5401 PDF doc:

1.1. mmbt5401.pdf Size:189K _motorola

MMBT5401
MMBT5401
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 150 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 160 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARA

1.2. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi

MMBT5401
MMBT5401
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.3. mmbt5401.pdf Size:67K _fairchild_semi

MMBT5401
MMBT5401
MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BVCEO Collec

1.4. mmbt5401.pdf Size:121K _diodes

MMBT5401
MMBT5401
MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary NPN Type Available (MMBT5551) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Lead, Halogen and Antimony Free, RoHS Compliant Terminal Connections: See Diagram "Green" Device (Notes 2 and 3) Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitte

1.5. mmbt5401_2.pdf Size:162K _mcc

MMBT5401
MMBT5401
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: 2L Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) SOT-23 Epoxy meets UL 94 V-0 flammability rating A Moisure Sensitivity Level 1 D O C Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units B C OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage 150 --- Vdc B E (IC=1.0mAdc, IB=0) F E V(BR)CBO Collector-Base Breakdown Voltage 160 --- Vdc (IC=100uAdc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc (IE=10uAdc, IC=0) GH J ICBO Collector Cutoff Current --- 0

1.6. mmbt5401lt1-d.pdf Size:115K _onsemi

MMBT5401
MMBT5401
MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the DIAGRAM Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS 2L M G SOT-23 (TO-236) Characteristic Symbol Max Unit G CASE 318 1 Total Device Dissipation PD 225 mW STYLE 6 FR-5 Board (Note 1) TA = 25C Derate Above 25C 1.8 mW/C 2L = Specific Device Code M = Date Code* Thermal Resistance, RqJA 556 C/W G = Pb-Free Package J

1.7. mmbt5401.pdf Size:99K _utc

MMBT5401
MMBT5401
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel MARKING 2L. G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-011.H MMBT5401 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25?) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and

1.8. mmbt5401w.pdf Size:226K _secos

MMBT5401
MMBT5401
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING: K4M 1 Millimeter Millimeter REF. REF. Base Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. 2 C 1.15 1.35 J 0.08 0.25 Emitter D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current-Continuous IC -200 mA Collector Power Dissipation PC 200 mW Thermal Resistance, Junction to Ambient R?JA 625 °C/W Opterating & Storage Temperature T

1.9. mmbt5401.pdf Size:111K _secos

MMBT5401
MMBT5401
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symbol Ratings Unit A 2.80 3.00 G 0.10 REF. Collector to Emitter Voltage VCEO -150 V B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 Collector to Base Voltage VCBO -160 V D 0.90 1.15 K 0.5 REF. Emitter to Base Voltage VEBO -5.0 V E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 Collector Current - Continuous IC -500 mA THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit TA = 25°C 225 mW Total Power Dissipation PD Derate above 25°C 1.8 mW / ? Thermal Resistance, Junction to Ambient R?JA 556 ? / W Alumina Substrate,(2) TA = 25°C 300 mW Total Power Dissipation PD Derate above 25°C 2.4

1.10. mmbt5401.pdf Size:373K _htsemi

MMBT5401
MMBT5401
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A hFE1 VCE= -5V, IC= -1mA 80 DC curre

1.11. mmbt5401.pdf Size:295K _gsme

MMBT5401
MMBT5401
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -150 Vdc ???-????? Collector-Base Voltage VCBO -160 Vdc ???-???? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current—Continuous Ic -500 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25????? 25? 1.8 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R ?JA 556 ?/W ?? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????(2) TA=25? Derate above25? ?? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg 150?, -55

1.12. mmbt5401.pdf Size:194K _lge

MMBT5401
MMBT5401
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A

1.13. mmbt5401.pdf Size:497K _wietron

MMBT5401
MMBT5401
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc) Collector-Emitter Saturation Voltage VCE(sat) -0.2 Vdc (IC=-10mAdc, IB=-1.0mAdc) - -0.5 (IC=-50mAdc, IB=-5.0mAdc) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) VBE(sat) - -1.0 Vdc (IC=-50mAdc, IB=-5.0mAdc) -1.0 SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product fT MHz 100 300 ( -10 VCE=-10Vdc, f=100MHz) IC mVdc, Output Capacitance Cobo PF 6.0 ( VCB -10 IE=0, f=1.0MHz) V dc, Small Signal Current Gain 200 40 h fe ( -1.0 V IC mVdc, CE=-10Vdc, f=1.0kHz) Noise Figure dB 8.0 NF V ( -200 dc, IC uA CE=-5.0Vdc, Rs=10 , f=1.0kHz)

1.14. mmbt5401lt1.pdf Size:325K _willas

MMBT5401
MMBT5401
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • LeaM-MBT5401LT1 2L 3000/Tape&Reel d free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free product for pa

Otros transistores... MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , MMBT5400R , BD679 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R , MMBT5551 .

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