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2SB522-2 .. 2SB713
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2SC2669 .. 2SC2859-O
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2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MMBT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 160

Tensión colector-emisor (Uce): 150

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: SOT23

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MMBT5401 PDF doc:

1.1. mmbt5401.pdf Size:189K _motorola

MMBT5401
MMBT5401
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 150 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 160 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARA

1.2. mmbt5401.pdf Size:67K _fairchild_semi

MMBT5401
MMBT5401
MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BVCEO Collec

1.3. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi

MMBT5401
MMBT5401
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.4. mmbt5401.pdf Size:121K _diodes

MMBT5401
MMBT5401
MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary NPN Type Available (MMBT5551) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Lead, Halogen and Antimony Free, RoHS Compliant Terminal Connections: See Diagram "Green" Device (Notes 2 and 3) Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitte

1.5. mmbt5401_2.pdf Size:162K _mcc

MMBT5401
MMBT5401
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: 2L Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) SOT-23 Epoxy meets UL 94 V-0 flammability rating A Moisure Sensitivity Level 1 D O C Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units B C OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage 150 --- Vdc B E (IC=1.0mAdc, IB=0) F E V(BR)CBO Collector-Base Breakdown Voltage 160 --- Vdc (IC=100uAdc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc (IE=10uAdc, IC=0) GH J ICBO Collector Cutoff Current --- 0

1.6. mmbt5401lt1-d.pdf Size:115K _onsemi

MMBT5401
MMBT5401
MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the DIAGRAM Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS 2L M G SOT-23 (TO-236) Characteristic Symbol Max Unit G CASE 318 1 Total Device Dissipation PD 225 mW STYLE 6 FR-5 Board (Note 1) TA = 25C Derate Above 25C 1.8 mW/C 2L = Specific Device Code M = Date Code* Thermal Resistance, RqJA 556 C/W G = Pb-Free Package J

1.7. mmbt5401.pdf Size:99K _utc

MMBT5401
MMBT5401
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel MARKING 2L. G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-011.H MMBT5401 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25?) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and

1.8. mmbt5401w.pdf Size:226K _secos

MMBT5401
MMBT5401
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING: K4M 1 Millimeter Millimeter REF. REF. Base Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. 2 C 1.15 1.35 J 0.08 0.25 Emitter D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current-Continuous IC -200 mA Collector Power Dissipation PC 200 mW Thermal Resistance, Junction to Ambient R?JA 625 °C/W Opterating & Storage Temperature T

1.9. mmbt5401.pdf Size:111K _secos

MMBT5401
MMBT5401
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symbol Ratings Unit A 2.80 3.00 G 0.10 REF. Collector to Emitter Voltage VCEO -150 V B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 Collector to Base Voltage VCBO -160 V D 0.90 1.15 K 0.5 REF. Emitter to Base Voltage VEBO -5.0 V E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 Collector Current - Continuous IC -500 mA THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit TA = 25°C 225 mW Total Power Dissipation PD Derate above 25°C 1.8 mW / ? Thermal Resistance, Junction to Ambient R?JA 556 ? / W Alumina Substrate,(2) TA = 25°C 300 mW Total Power Dissipation PD Derate above 25°C 2.4

1.10. mmbt5401.pdf Size:373K _htsemi

MMBT5401
MMBT5401
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A hFE1 VCE= -5V, IC= -1mA 80 DC curre

1.11. mmbt5401.pdf Size:295K _gsme

MMBT5401
MMBT5401
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -150 Vdc ???-????? Collector-Base Voltage VCBO -160 Vdc ???-???? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current—Continuous Ic -500 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25????? 25? 1.8 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R ?JA 556 ?/W ?? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????(2) TA=25? Derate above25? ?? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg 150?, -55

1.12. mmbt5401.pdf Size:194K _lge

MMBT5401
MMBT5401
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A

1.13. mmbt5401.pdf Size:497K _wietron

MMBT5401
MMBT5401
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc) Collector-Emitter Saturation Voltage VCE(sat) -0.2 Vdc (IC=-10mAdc, IB=-1.0mAdc) - -0.5 (IC=-50mAdc, IB=-5.0mAdc) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) VBE(sat) - -1.0 Vdc (IC=-50mAdc, IB=-5.0mAdc) -1.0 SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product fT MHz 100 300 ( -10 VCE=-10Vdc, f=100MHz) IC mVdc, Output Capacitance Cobo PF 6.0 ( VCB -10 IE=0, f=1.0MHz) V dc, Small Signal Current Gain 200 40 h fe ( -1.0 V IC mVdc, CE=-10Vdc, f=1.0kHz) Noise Figure dB 8.0 NF V ( -200 dc, IC uA CE=-5.0Vdc, Rs=10 , f=1.0kHz)

1.14. mmbt5401lt1.pdf Size:325K _willas

MMBT5401
MMBT5401
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • LeaM-MBT5401LT1 2L 3000/Tape&Reel d free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free product for pa

Otros transistores... MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , MMBT5400R , BD679 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R , MMBT5551 .

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