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100DA025D .. 2N100
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2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MMBT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT5401

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 160

Tensión colector-emisor (Uce): 150

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 175

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: SOT23

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MMBT5401 PDF doc:

1.1. mmbt5401.pdf Size:189K _motorola

MMBT5401
MMBT5401
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5401LT1/D High Voltage Transistor MMBT5401LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 CollectorEmitter Voltage VCEO 150 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 160 Vdc SOT23 (TO236AB) EmitterBase Voltage VEBO 5.0 Vdc Collector Current Continuous IC 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board(1) PD 225 mW TA = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RqJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient RqJA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150 C DEVICE MARKING MMBT5401LT1 = 2L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARA

1.2. 2n5401_mmbt5401.pdf Size:75K _fairchild_semi

MMBT5401
MMBT5401
2N5401 MMBT5401 C E C TO-92 B B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 150 V VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 600 mA -55 to +150 TJ, Tstg Operating and Storage Junction Temperature Range C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characterist

1.3. mmbt5401.pdf Size:67K _fairchild_semi

MMBT5401
MMBT5401
MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for C applications requiring high voltage. E B SOT-23 Mark: 2L PNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -150 V VCBO Collector-Base Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Notes: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics BVCEO Collec

1.4. mmbt5401.pdf Size:121K _diodes

MMBT5401
MMBT5401
MMBT5401 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary NPN Type Available (MMBT5551) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and Switching Moisture Sensitivity: Level 1 per J-STD-020D Lead, Halogen and Antimony Free, RoHS Compliant Terminal Connections: See Diagram "Green" Device (Notes 2 and 3) Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) C B E Top View Device Schematic Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitte

1.5. mmbt5401_2.pdf Size:162K _mcc

MMBT5401
MMBT5401
MCC Micro Commercial Components TM MMBT5401 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features PNP Plastic Collector Current: ICM=0.6A Encapsulate Collector-Base Voltage: V(BR)CBO=160V Operating And Storage Temperatures 55OC to 150OC Transistor Capable of 0.3Watts of Power Dissipation Marking: 2L Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) SOT-23 Epoxy meets UL 94 V-0 flammability rating A Moisure Sensitivity Level 1 D O C Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units B C OFF CHARACTERISTICS V(BR)CEO Collector -Emitter Breakdown Voltage 150 --- Vdc B E (IC=1.0mAdc, IB=0) F E V(BR)CBO Collector-Base Breakdown Voltage 160 --- Vdc (IC=100uAdc, IE=0) V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc (IE=10uAdc, IC=0) GH J ICBO Collector Cutoff Current --- 0

1.6. mmbt5401lt1-d.pdf Size:115K _onsemi

MMBT5401
MMBT5401
MMBT5401LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO -150 Vdc BASE Collector-Base Voltage VCBO -160 Vdc 2 Emitter-Base Voltage VEBO -5.0 Vdc EMITTER Collector Current - Continuous IC -500 mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the DIAGRAM Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS 2L M G SOT-23 (TO-236) Characteristic Symbol Max Unit G CASE 318 1 Total Device Dissipation PD 225 mW STYLE 6 FR-5 Board (Note 1) TA = 25C Derate Above 25C 1.8 mW/C 2L = Specific Device Code M = Date Code* Thermal Resistance, RqJA 556 C/W G = Pb-Free Package J

1.7. mmbt5401.pdf Size:99K _utc

MMBT5401
MMBT5401
UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen-Free 1 2 3 MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R SOT-23 E B C Tape Reel MARKING 2L. G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R206-011.H MMBT5401 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (TA = 25?) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -160 V Collector -Emitter Voltage VCEO -150 V Emitter -Base Voltage VEBO -5 V DC Collector Current IC -600 mA Power Dissipation PD 350 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and

1.8. mmbt5401w.pdf Size:226K _secos

MMBT5401
MMBT5401
MMBT5401W PNP Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A suffix of “-C” specifies halogen & lead-free FEATURE A L Ideal for Medium Power Amplification and Switching 3 3 Also Available in Lead Free Version Top View C B Complementary to MMBT5551W 1 1 2 2 K E Collector 3 D H J F G MARKING: K4M 1 Millimeter Millimeter REF. REF. Base Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. 2 C 1.15 1.35 J 0.08 0.25 Emitter D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -150 V Emitter to Base Voltage VEBO -5 V Collector Current-Continuous IC -200 mA Collector Power Dissipation PC 200 mW Thermal Resistance, Junction to Ambient R?JA 625 °C/W Opterating & Storage Temperature T

1.9. mmbt5401.pdf Size:111K _secos

MMBT5401
MMBT5401
MMBT5401 PNP Silicon General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES A L Ideal for medium power amplification and switching 3 3 Top View C B 1 1 2 MARKING 2 K E 2L D H J F G ABSOLUTE MAXIMUM RATINGS Millimeter Millimeter REF. REF. Min. Max. Min. Max. Parameter Symbol Ratings Unit A 2.80 3.00 G 0.10 REF. Collector to Emitter Voltage VCEO -150 V B 2.25 2.55 H 0.55 REF. C 1.20 1.40 J 0.08 0.15 Collector to Base Voltage VCBO -160 V D 0.90 1.15 K 0.5 REF. Emitter to Base Voltage VEBO -5.0 V E 1.80 2.00 L 0.95 TYP. F 0.30 0.50 Collector Current - Continuous IC -500 mA THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit TA = 25°C 225 mW Total Power Dissipation PD Derate above 25°C 1.8 mW / ? Thermal Resistance, Junction to Ambient R?JA 556 ? / W Alumina Substrate,(2) TA = 25°C 300 mW Total Power Dissipation PD Derate above 25°C 2.4

1.10. mmbt5401.pdf Size:373K _htsemi

MMBT5401
MMBT5401
MMBT5401 TRANSISTOR(PNP) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to MMBT5551 3. COLLECTOR Ideal for medium power amplification and switching - MARKING: 2L MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A hFE1 VCE= -5V, IC= -1mA 80 DC curre

1.11. mmbt5401.pdf Size:295K _gsme

MMBT5401
MMBT5401
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM5401 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO -150 Vdc ???-????? Collector-Base Voltage VCBO -160 Vdc ???-???? Emitter-Base Voltage VEBO -5.0 Vdc ???-???? Collector Current—Continuous Ic -500 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ???? ?? ??? ?? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25????? 25? 1.8 mW/? Derate above25? ?? 25??? Thermal Resistance Junction to Ambient R ?JA 556 ?/W ?? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????(2) TA=25? Derate above25? ?? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg 150?, -55

1.12. mmbt5401.pdf Size:194K _lge

MMBT5401
MMBT5401
MMBT5401 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -160 V IC= -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -10?A, IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 ?A

1.13. mmbt5401.pdf Size:497K _wietron

MMBT5401
MMBT5401
MMBT5401 High Voltage PNP Transistors COLLECTOR 3 3 1 1 BASE 2 2 SOT-23 EMITTER WEITRON http://www.weitron.com.tw MMBT5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain - 50 (IC=-1.0mAdc, VCE=-5.0Vdc) hFE - 60 240 (IC=-10mAdc, VCE=-5.0Vdc) 50 - (IC=-50mAdc, VCE=-5.0Vdc) Collector-Emitter Saturation Voltage VCE(sat) -0.2 Vdc (IC=-10mAdc, IB=-1.0mAdc) - -0.5 (IC=-50mAdc, IB=-5.0mAdc) Base-Emitter Saturation Voltage (IC=-10mAdc, IB=-1.0mAdc) VBE(sat) - -1.0 Vdc (IC=-50mAdc, IB=-5.0mAdc) -1.0 SMALL-SIGNAL CHARACTERISTICS Collector-Gain-Bandwidth Product fT MHz 100 300 ( -10 VCE=-10Vdc, f=100MHz) IC mVdc, Output Capacitance Cobo PF 6.0 ( VCB -10 IE=0, f=1.0MHz) V dc, Small Signal Current Gain 200 40 h fe ( -1.0 V IC mVdc, CE=-10Vdc, f=1.0kHz) Noise Figure dB 8.0 NF V ( -200 dc, IC uA CE=-5.0Vdc, Rs=10 , f=1.0kHz)

1.14. mmbt5401lt1.pdf Size:325K _willas

MMBT5401
MMBT5401
FM120-M WILLAS MMBT5401LT1 THRU High Voltage Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURE • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. DEVICE MARKING AND ORDERING INFORMATION • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. Device Marking Shipping 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • LeaM-MBT5401LT1 2L 3000/Tape&Reel d free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" SOT– 23 Halogen free product for pa

1.15. mmbt5401_sot-23.pdf Size:304K _can-sheng

MMBT5401
MMBT5401
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT5401 TRANSISTOR (PNP) FEATURES Complimentary to MMBT5551 MARKING:2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) -160 V VCEO Collector-Emitter Voltage (集电极-发射极电压) -150 V VEBO Emitter-Base Voltage (发射极-基极电压) -5 V IC Collector Current -Continuous (集电极电流) -0.6 A PC Collector Power Dissipation (耗散功率) 0.3 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (

1.16. mmbt5401t.pdf Size:920K _blue-rocket-elect

MMBT5401
MMBT5401
MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 击穿电压高,可与 MMBT5551T(BR3DG5551T)互补。 High voltage, complementary Pair with MMBT5551T(BR3DG5551T). 用途 / Applications 用于普通高压放大。 General purpose high voltage amplifier. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 印章代码 / Marking hFE Classifications A B C Symbol 50~150 100~300 200~400 hFE Range Marking H2LA H2LB H2LC http://www.fsbrec.com 1 / 6 ** ** ** MMBT5401T(BR3CG5401T) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -180 V Collector to Emitter Voltage VCEO -160 V Emitter to Base Voltage VEBO -6.0 V C

1.17. mmbt5401lt1.pdf Size:910K _shenzhen-tuofeng-semi

MMBT5401
MMBT5401
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5401LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR - Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V V (BR)CBO Ic= -100 µA, I =0 -160 E Collector-emitter breakdown voltage V Ic= -1 mA, I =0 -150 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I = -10µA, I =0 E C Collector cut-off current ICBO VCB=-120V, IE=0 -0.1 µA Emitter cut-off current I V =-4V, I =0 -0.1 EBO EB C µA H V = -5V, I = -1mA 80 FE(1) CE C DC current gain H V = -5V, I =-10mA 100 200 FE(2) CE C H V = -5V, I =-50mA

Otros transistores... MMBT5140 , MMBT5141 , MMBT5142 , MMBT5143 , MMBT5172 , MMBT5179 , MMBT5400 , MMBT5400R , BD679 , MMBT5401LT1 , MMBT5401R , MMBT5447 , MMBT5449 , MMBT5550 , MMBT5550LT1 , MMBT5550R , MMBT5551 .

 

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