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2SA1294-O .. 2SA1421
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2SA1592T .. 2SA1866
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2SC1078 .. 2SC1292
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2SC1741AS .. 2SC1961
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2SC2235-O .. 2SC2449
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2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MPSA13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPSA13

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 10

Corriente del colector DC máxima (Ic): 0.3

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 125

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar MPSA13

MPSA13 PDF doc:

1.1. mpsa13_mpsa14.pdf Size:225K _motorola

MPSA13
MPSA13
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 TO92 (TO226AA) Rating Symbol Value Unit CollectorEmitter Voltage VCES 30 Vdc CollectorBase Voltage VCBO 30 Vdc EmitterBase Voltage VEBO 10 Vdc Collector Current Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CES 30 V

1.2. mpsa13.pdf Size:37K _fairchild_semi

MPSA13
MPSA13
MPSA13 MMBTA13 PZTA13 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A Operating and Storage Junction Temperature Range -55 to +150 TJ, T C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteri

1.3. mpsa13_mpsa14_to-92.pdf Size:306K _mcc

MPSA13
MPSA13
MCC MPSA13 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MPSA14 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Capable of 1.5Watts of Power Dissipation. NPN Silicon Collector-current 500mA Collector-base Voltage 30V Darlington Transistor Operating and storage junction temperature range: -55OC to +150OC Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:MPSA13--MPSA13,MPSA14--MPSA14. TO-92 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) AE Maximum Ratings Symbol Rating Rating Unit VCES Collector-Emitter Voltage 30 V B VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current Continuous 500 mA PD Total Device Dissipation @TA=25OC 625 mW Derate above 25OC 5.0 mW/OC P Total Device Dissipation @T =25OC 1.5 W D A Derate above 25OC 12 mW/OC C O T Junction Temperature -55 to +150

1.4. mpsa13.pdf Size:10K _utc

MPSA13
MPSA13
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA13 is a darlington transistor. 1 FEATURES *Collector-Emitter Voltage: Vces = 30V SOT-89 *Collector Dissipation : Pc ( mas ) = 625 mW 1 SOT-23 TO-92 1:EMITTER 2:BASE 3:COLLECTOR SOT-89 1:EMITTER 2:COLLECTOR 3:BASE SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Collector Dissipation(Tc=25C) Pc 625 mW Collector Current Ic 500 mA Junction Temperature Tj 150 C Storage Temperature TSTG -55 ~ +150 C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Collector-Emitter Breakdown Voltage BVCEO Ic=100A,IB=0 30 V Collector Cut-Off Current ICBO VCB=30V,IE=0 100 A Emitter Cut-Off Current IEBO VEB=10V,Ic=0

1.5. mpsa13-14.pdf Size:167K _secos

MPSA13
MPSA13
MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 3 PCM: 0.625 W (Tamb=25?) 1 2 3 Collector current 1. EMITTER ICM: 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR) Ic= 100µA, I =0 30 V CBO E Collector-emitter breakdown voltage V(BR) I = 1mA , I =0 30 V CEO C B Emitter-base breakdown voltage V(BR) IE= 100µA, IC=0 10 V EBO Collector cut-off current I V = 30V, I =0 0.1 µA CBO CB E Emitter cut-off current I V = 10V, I =0 0.1 µA EBO EB C V =5V, I =10mA MPSA13 5000 CE C H * FE(1) MPSA14 10000 DC current gain V =5V, I =100mA MPSA13 10000 CE C H * FE(2)

1.6. mpsa13_14.pdf Size:293K _cdil

MPSA13
MPSA13
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13 MPSA 14 TO-92 CBE C C B B E E ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 30 V Collector -Base Voltage VCBO 30 V Emitter -Base Voltage VEBO 10 V Collector Current -Continuous IC 500 mA Power Dissipation @ Ta=25 degC PD 625 mW Derate above 25 deg C 5.0 mW./deg C Power Dissipation @ Tc=25 degC PD 1.5 W Derate above 25 deg C 12 mW./deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Min Max UNIT Collector -Emitter Voltage VCES IC=100uA,IB=0 30 - V Collector-Cut off Current ICBO VCB=30V, IE=0 - 100 nA Emitter-Cut off Current IEBO VEB=10V, IC=0 - 100

1.7. mpsa13_mpsa14.pdf Size:164K _kec

MPSA13
MPSA13
SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 30 V K 0.55 MAX F F L 2.30 VCES Collector-Emitter Voltage 30 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 10 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 TO-92 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCES IC=0.1mA Collector-Emitter Breakdown Voltage 30 - - V ICBO VCB=30V Emitter Cut-off Current - - 100 nA IEBO VEB=10V Emitter Cut-off Current - - 100 nA MPSA13 5,000 - - IC=10mA, VCE=5V MPSA14 10,000 - - hFE DC Current Gain -

1.8. mpsa13-14.pdf Size:487K _wietron

MPSA13
MPSA13
MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(TA=25 C Unless O therwise Specified) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-base Voltage 30 V VEBO 10 V Emitter-base Voltage mA Collector Current IC 500 Total Power Dissipation(TA=25?C) 0.625 PD W Operating Junction and Storage Temperature Range TJ,Tstg - 55~+150 ?C Electrical Characteristics(TA=25C Unless otherwise noted) Characteristic Symbol Min Max Unit Collector-base breakdown voltage V( BR) CB O V 30 - IC=100µA,IE=0 Collector-emitter breakdown voltage V( BR) CE O 30 - V IC=1mA,IB=0 Emitter-base breakdown voltage V( BR) EB O - V 10 IE=100µA,IC=0 Collector cut-off current ICB O 0.1 µA VCB=30V,IE=0 Emitter cut-off current IEBO 0.1 µA VEB=10V,IC=0 DC curent gain1 MPSA13 5000 H FE (1) - - VCE=5V,IC=10mA 10000 MPSA14 VCE=5V,IC=100mA MPSA13 100

Otros transistores... MPS930 , MPS930A , MPS930R , MPSA05 , MPSA06 , MPSA09 , MPSA10 , MPSA12 , 2N4401 , MPSA14 , MPSA16 , MPSA17 , MPSA18 , MPSA20 , MPSA25 , MPSA26 , MPSA27 .

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