Todos los transistores


Introduzca al menos 3 números o letras
 
MPSA13
  MPSA13
  MPSA13
 
MPSA13
  MPSA13
  MPSA13
 
MPSA13
  MPSA13
 
 
Liste
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

MPSA13 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPSA13

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.33

Tensión colector-base (Ucb): 30

Tensión colector-emisor (Uce): 30

Tensión emisor-base (Ueb): 10

Corriente del colector DC máxima (Ic): 0.3

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 125

Capacitancia de salida (Cc), pF: 10

Ganancia de corriente contínua (hfe): 5

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar MPSA13

MPSA13 PDF doc:

1.1. mpsa13_mpsa14.pdf Size:225K _motorola

MPSA13
MPSA13
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA13/D Darlington Transistors MPSA13 NPN Silicon MPSA14* *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 3 MAXIMUM RATINGS CASE 2904, STYLE 1 TO92 (TO226AA) Rating Symbol Value Unit CollectorEmitter Voltage VCES 30 Vdc CollectorBase Voltage VCBO 30 Vdc EmitterBase Voltage VEBO 10 Vdc Collector Current Continuous IC 500 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V(BR)CES 30 V

1.2. mpsa13.pdf Size:37K _fairchild_semi

MPSA13
MPSA13
MPSA13 MMBTA13 PZTA13 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current - Continuous 1.2 A Operating and Storage Junction Temperature Range -55 to +150 TJ, T C stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteri

1.3. mpsa13_mpsa14_to-92.pdf Size:306K _mcc

MPSA13
MPSA13
MCC MPSA13 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components MPSA14 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Capable of 1.5Watts of Power Dissipation. NPN Silicon Collector-current 500mA Collector-base Voltage 30V Darlington Transistor Operating and storage junction temperature range: -55OC to +150OC Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:MPSA13--MPSA13,MPSA14--MPSA14. TO-92 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) AE Maximum Ratings Symbol Rating Rating Unit VCES Collector-Emitter Voltage 30 V B VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current Continuous 500 mA PD Total Device Dissipation @TA=25OC 625 mW Derate above 25OC 5.0 mW/OC P Total Device Dissipation @T =25OC 1.5 W D A Derate above 25OC 12 mW/OC C O T Junction Temperature -55 to +150

1.4. mpsa13.pdf Size:10K _utc

MPSA13
MPSA13
UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR 1 DESCRIPTION TO-92 The UTC MPSA13 is a darlington transistor. 1 FEATURES *Collector-Emitter Voltage: Vces = 30V SOT-89 *Collector Dissipation : Pc ( mas ) = 625 mW 1 SOT-23 TO-92 1:EMITTER 2:BASE 3:COLLECTOR SOT-89 1:EMITTER 2:COLLECTOR 3:BASE SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 10 V Collector Dissipation(Tc=25C) Pc 625 mW Collector Current Ic 500 mA Junction Temperature Tj 150 C Storage Temperature TSTG -55 ~ +150 C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT Collector-Emitter Breakdown Voltage BVCEO Ic=100A,IB=0 30 V Collector Cut-Off Current ICBO VCB=30V,IE=0 100 A Emitter Cut-Off Current IEBO VEB=10V,Ic=0

1.5. mpsa13-14.pdf Size:167K _secos

MPSA13
MPSA13
MPSA13 / 14 NPN Epitaxial Silicon Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Darlington TRANSISTOR 1 Power dissipation 2 3 PCM: 0.625 W (Tamb=25?) 1 2 3 Collector current 1. EMITTER ICM: 0.5 A 2. BASE Collector-base voltage 3 . COLLECTOR V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR) Ic= 100µA, I =0 30 V CBO E Collector-emitter breakdown voltage V(BR) I = 1mA , I =0 30 V CEO C B Emitter-base breakdown voltage V(BR) IE= 100µA, IC=0 10 V EBO Collector cut-off current I V = 30V, I =0 0.1 µA CBO CB E Emitter cut-off current I V = 10V, I =0 0.1 µA EBO EB C V =5V, I =10mA MPSA13 5000 CE C H * FE(1) MPSA14 10000 DC current gain V =5V, I =100mA MPSA13 10000 CE C H * FE(2)

1.6. mpsa13_14.pdf Size:293K _cdil

MPSA13
MPSA13
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR DARLINGTON TRANSISTORS MPSA 13 MPSA 14 TO-92 CBE C C B B E E ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 30 V Collector -Base Voltage VCBO 30 V Emitter -Base Voltage VEBO 10 V Collector Current -Continuous IC 500 mA Power Dissipation @ Ta=25 degC PD 625 mW Derate above 25 deg C 5.0 mW./deg C Power Dissipation @ Tc=25 degC PD 1.5 W Derate above 25 deg C 12 mW./deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 83.3 deg C/W Junction to Ambient Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Min Max UNIT Collector -Emitter Voltage VCES IC=100uA,IB=0 30 - V Collector-Cut off Current ICBO VCB=30V, IE=0 - 100 nA Emitter-Cut off Current IEBO VEB=10V, IC=0 - 100

1.7. mpsa13_mpsa14.pdf Size:164K _kec

MPSA13
MPSA13
SEMICONDUCTOR MPSA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATIONS. DARLINGTON TRANSISTOR. B C N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 MAXIMUM RATING (Ta=25 ) F 1.27 G 0.85 CHARACTERISTIC SYMBOL RATING UNIT H 0.45 _ H J 14.00 + 0.50 VCBO Collector-Base Voltage 30 V K 0.55 MAX F F L 2.30 VCES Collector-Emitter Voltage 30 V M 0.45 MAX N 1.00 1 2 3 VEBO Emitter-Base Voltage 10 V 1. EMITTER IC Collector Current 500 mA 2. BASE 3. COLLECTOR PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 TO-92 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCES IC=0.1mA Collector-Emitter Breakdown Voltage 30 - - V ICBO VCB=30V Emitter Cut-off Current - - 100 nA IEBO VEB=10V Emitter Cut-off Current - - 100 nA MPSA13 5,000 - - IC=10mA, VCE=5V MPSA14 10,000 - - hFE DC Current Gain -

1.8. mpsa13-14.pdf Size:487K _wietron

MPSA13
MPSA13
MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(TA=25 C Unless O therwise Specified) Rating Symbol Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-base Voltage 30 V VEBO 10 V Emitter-base Voltage mA Collector Current IC 500 Total Power Dissipation(TA=25?C) 0.625 PD W Operating Junction and Storage Temperature Range TJ,Tstg - 55~+150 ?C Electrical Characteristics(TA=25C Unless otherwise noted) Characteristic Symbol Min Max Unit Collector-base breakdown voltage V( BR) CB O V 30 - IC=100µA,IE=0 Collector-emitter breakdown voltage V( BR) CE O 30 - V IC=1mA,IB=0 Emitter-base breakdown voltage V( BR) EB O - V 10 IE=100µA,IC=0 Collector cut-off current ICB O 0.1 µA VCB=30V,IE=0 Emitter cut-off current IEBO 0.1 µA VEB=10V,IC=0 DC curent gain1 MPSA13 5000 H FE (1) - - VCE=5V,IC=10mA 10000 MPSA14 VCE=5V,IC=100mA MPSA13 100

Otros transistores... MPS930 , MPS930A , MPS930R , MPSA05 , MPSA06 , MPSA09 , MPSA10 , MPSA12 , 2N4401 , MPSA14 , MPSA16 , MPSA17 , MPSA18 , MPSA20 , MPSA25 , MPSA26 , MPSA27 .

(C) 2005 All Right reserved BJT | | MOSFET | | IGBT | | Fabricantes | | SMD-códigos | | Encapsulados | | Contáctenos alltransistors[@]gmail.com