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TIP127 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP127

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65

Tensión colector-base (Ucb): 100

Tensión colector-emisor (Uce): 100

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 5

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 1

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar TIP127

 

TIP127 PDF:

1.1. tip125_tip126_tip127.pdf Size:219K _mcc

TIP127
TIP127

MCC Micro Commercial Components TM TIP125/126/127 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Silicon PNP The complementary NPN types are the TIP121/2/3 respectively Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Darlington Epoxy meets UL 94

1.2. tip127.pdf Size:21K _utc

TIP127
TIP127

UTC TIP127 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL VALUE UNIT Storage Temperature Ts -55 ~ +150 C Junction Temperature Tj 150 C Total Power Dissipation PD 65 W Col

1.3. tip127.pdf Size:70K _kec

TIP127
TIP127

SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER A R APPLICATIONS. S FEATURES P D High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. DIM MILLIMETERS A 10.30 MAX High Collector Breakdown Voltage : VCEO=-120V(Min.) B 15.30 MAX C 0.80 _ + D ?3.60 0.20 T E 3.00 F 6.70 MAX _ G 13.60 + 0.50 L H

1.4. tip127.pdf Size:179K _inchange_semiconductor

TIP127
TIP127

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP127 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A = -4.0V(Max)@ IC= -5A ·Complement to Type TIP122 APPLICATIONS ·Desi

1.5. htip127.pdf Size:50K _hsmc

TIP127
TIP127

Spec. No. : HE6713 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/5 HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic C Absolute Maximum Ratings (TA=25°C) B • Maximum Temperatures Storage Temperatu

1.6. tip127l.pdf Size:378K _blue-rocket-elect

TIP127
TIP127

TIP127L(BR3DA127LQ) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package. 特征 / Features 与 TIP122L(BR3DA122LQ)互补。 Complement to TIP122L(BR3DA122LQ). 用途 / Applications 用于中功率线性开关放大。 Medium power linear switching applications. 内部等效电路 / E

1.7. tip122-tip127_to220.pdf Size:102K _first_silicon

TIP127
TIP127

TIP120,121,122 SEMICONDUCTOR TECHNICAL DATA TIP125,126,127 TIP120,121,122 Darlington TRANSISTOR (NPN) TO-220 TIP125,126,127 Darlington TRANSISTOR (PNP) 1.BASE 2.COLLECTOR FEATURES Medium Power Complementary silicon transistors 3.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 TIP122 Units TIP125 TIP126 TIP127 VCBO Collector-Base Vol

Otros transistores... TIP115 , TIP116 , TIP117 , TIP120 , TIP121 , TIP122 , TIP125 , TIP126 , 2N2222A , TIP130 , TIP131 , TIP132 , TIP135 , TIP136 , TIP137 , TIP140 , TIP140F .

 


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