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2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

TIP41 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TIP41

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 65

Tensión colector-base (Ucb): 80

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 6

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar TIP41

TIP41 PDF doc:

1.1. tip41are.pdf Size:222K _motorola

TIP41
TIP41
Order this document MOTOROLA by TIP41A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP41A Complementary Silicon Plastic TIP41B* Power Transistors TIP41C* . . . designed for use in general purpose amplifier and switching applications. PNP CollectorEmitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc TIP42A CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) TIP41A, TIP42A TIP42B* VCEO(sus) = 80 Vdc (Min) TIP41B, TIP42B VCEO(sus) = 100 Vdc (Min) TIP41C, TIP42C High Current Gain Bandwidth Product TIP42C* IIIIIIIIIIIIIIIIIIIIIII fT = 3.0 MHz (Min) @ IC = 500 mAdc *Motorola Preferred Device Compact TO220 AB Package IIIIIIIIIIIIIIIIIIIIIII 6 AMPERE IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII III III III POWER TRANSISTORS *MAXIMUM RATINGS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII IIII IIIIIIIIIII IIII IIII III III III III III III COMPLEMENTARY TIP41AIII TIP41CIII TIP41B IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIII III

1.2. tip41a_tip42a.pdf Size:205K _st2

TIP41
TIP41
TIP41A TIP42A COMPLEMENTARY SILICON POWER TRANSISTOR Features COMPLEMENTARY PNP-NPN DEVICES NEW ENHANCED SERIES HIGH SWITCHING SPEED hFE IMPROVED LINEARITY 3 2 Applications 1 GENERAL PURPOSE CIRCUITS TO-220 AUDIO AMPLIFIER POWER LINEAR AND SWITCHING Description Internal Schematic Diagram The TIP41A is a silicon base island technology NPN power transistor Jedec TO-220 plastic package with improved performances than the industry standard TIP41A that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42A. Order Codes Part Number Marking Package Packing TIP41A TIP41A TO-220 TUBE TIP42A TIP42A TO-220 TUBE rev.1 October 2005 1/10 www.st.com 10 1 Absolute Maximum Ratings TIP42A 1 Absolute Maximum Ratings Table 1. Absolute Maximum Ratings Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 60 V VCEO Collector-Emitter Voltage (IB = 0) 60 V VEBO Emitte-Base Voltage (

1.3. tip41c_tip42c.pdf Size:275K _st2

TIP41
TIP41
TIP41C TIP42C Complementary power transistors . Features Complementary PNP-NPN devices New enhanced series High switching speed hFE grouping hFE improved linearity 3 2 1 Applications TO-220 General purpose circuits Audio amplifier Figure 1. Internal schematic diagram Power linear and switching Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching applications. The complementary PNP type is TIP42C Table 1. Device summary Order code Marking Package Packaging TIP41C R TIP41C (Note 1 on page 4) TIP41C O TO-220 Tube TIP41C Y TIP42C R TIP42C (Note 1 on page 4) TIP42C O TO-220 Tube TIP42C Y November 2007 Rev 2 1/12 www.st.com 12 Contents TIP41C - TIP42C Contents 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . .

1.4. tip41.pdf Size:39K _st2

TIP41
TIP41
TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP41A TIP41B TIP41C PNP TIP42A TIP42B TIP42C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V V Emitter-Base Voltage (I = 0) 5 V EBO C IC Collector Current 6 A ICM Collector Peak Current 10 A I Base Current 3 A B P Total Dissipation at T ? 25 oC 65 W tot case T ? 25 oC 2 W amb o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C THERMAL DATA o Rthj-ca s

1.5. tip41-42c.pdf Size:66K _st2

TIP41
TIP41
TIP41A/41B/41C TIP42A/42B/42C COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP41A, TIP41B and TIP41C are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in medium power linear and switching applications. The complementary PNP types are TIP42A, TIP42B and TIP42C. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP41A TIP41B TIP41C PNP TIP42A TIP42B TIP42C V Collector-Base Voltage (I = 0) 60 80 100 V CBO E VCEO Collector-Emitter Voltage (IB = 0) 60 80 100 V VEBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 6 A ICM Collector Peak Current 10 A I Base Current 3 A B P Total Dissipation at T ? 25 oC 65 W tot case Tamb ? 25 oC 2 W o Tstg Storage Temperature -65 to 150 C o Tj Max. Operating Junction Temperature 150 C 1/4 October 1995 TIP41A/TIP41B/TIP41C/TIP42A/TIP42B/TIP42C THERMAL DATA o Rthj-case T

1.6. tip41_tip41a_tip41b_tip41c.pdf Size:527K _fairchild_semi

TIP41
TIP41

1.7. tip41abc.pdf Size:39K _fairchild_semi

TIP41
TIP41

1.8. tip41.pdf Size:50K _samsung

TIP41
TIP41
TIP41 SERIES (TIP41/41A/41B/41C) NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR TO-220 SWITCHING APPLICATIONS Complement to TIP42/42A/42B/42C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage : TIP41 VCBO 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V Collector Emitter Voltage : TIP41 VCEO 40 V : TIP41A 60 V : TIP41B 80 V 1.Base 2.Collector 3.Emitter : TIP41C 100 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 10 A Base Current IB 2 A Collector Dissipation ( TC=25 ) PC 65 W Collector Dissipation ( TA=25 ) PC 2 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 ELECTRICAL CHARACTERISTICS (TC =25 ) Characteristic Symbol Test Conditions Min Max Unit *Collector Emitter Sustaining Voltage : TIP41 BVCEO(sus) IC = 30mA, IB = 0 40 V : TIP41A 60 V : TIP41B 80 V : TIP41C 100 V Collector Cutoff Current : TIP41/41A ICEO VCE = 30V, IB = 0 0.7 mA : TIP41B/

1.9. tip41-a-b-c.pdf Size:339K _central

TIP41
TIP41
TIP41 TIP41A TIP41B www.centralsemi.com TIP41C DESCRIPTION: NPN SILICON The CENTRAL SEMICONDUCTOR TIP41 SERIES POWER TRANSISTOR types are NPN Epitaxial-Base Silicon Power Transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25C) SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS Collector-Base Voltage VCBO 40 60 80 100 V Collector-Emitter Voltage VCEO 40 60 80 100 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 6.0 A Peak Collector Current ICM 10 A Continuous Base Current IB 2.0 A Power Dissipation PD 65 W Power Dissipation (TA=25C) PD 2.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEO VCE=30V (TIP41, TIP41A) 0.7 mA ICEO VCE=60V (TIP41B, TIP41C) 0.7 mA ICES VCE=Rated VCEO 0.4 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA (TIP41) 40 V BVCEO I

1.10. tip41_tip41a_tip41b_tip41c_to-220.pdf Size:248K _mcc

TIP41
TIP41
MCC Micro Commercial Components TM TIP41/41A/41B/41C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP42 respectively Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Power Transistors Marking : Part Number Absolute Maximum Ratings @ Ta = 25? (unless otherwise noted) Symbol Parameter Value Unit TO-220 VCBO 40 TIP41 B C Collector-base voltage 60 V TIP41A (Open emitter) 80 S F TIP41B 100 TIP41C VCEO Q 40 TIP41 T Collector-emitter voltage 60 V TIP41A (Open base) 80 TIP41B A 100 TIP41C U VEBO Emitter-base Voltage (Open collector) 5 V IC Collector Current 6 A 1 2 3 ICM Collector Current Pulse 10 A H IB Base Current 2 A Total Device Dissipation(Ta=25?) 2

1.11. tip41_tip41a_tip41b_tip41c_tip42_tip42a_tip42b_tip42c.pdf Size:93K _onsemi

TIP41
TIP41
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP) Complementary Silicon Plastic Power Transistors http://onsemi.com Designed for use in general purpose amplifier and switching applications. 6 AMPERE Features COMPLEMENTARY SILICON ESD Ratings: Machine Model, C; > 400 V POWER TRANSISTORS Human Body Model, 3B; > 8000 V 40-60-80-100 VOLTS, Epoxy Meets UL 94 V-0 @ 0.125 in 65 WATTS Pb-Free Packages are Available* MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collector-Emitter Voltage TIP41, TIP42 VCEO 40 Vdc 4 TIP41A, TIP42A 60 TIP41B, TIP42B 80 TIP41C, TIP42C 100 Collector-Base Voltage TIP41, TIP42 VCB 40 Vdc TO-220AB TIP4xxG TIP41A, TIP42A 60 CASE 221A AYWW TIP41B, TIP42B 80 STYLE 1 TIP41C, TIP42C 100 1 2 3 Emitter-Base Voltage VEB 5.0 Vdc Collector Current- Continuous IC 6.0 Adc Peak 10 TIP4xx = Device Code Base Current IB 2.0 Adc xx = 1, 1A, 1B, 1C Total Power Dissipation @ TC = 25C PD 65 W 2, 2A, 2B, 2C

1.12. tip41c.pdf Size:215K _utc

TIP41
TIP41
UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR ? DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. ? FEATURE * Complement to TIP42C ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 TIP41CL-x-TA3-T TIP41CG-x-TA3-T TO-220 B C E Tube TIP41CL-x-TF3-T TIP41CG-x-TF3-T TO-220F B C E Tube TIP41CL-x-TN3-T TIP41CG-x-TN3-T TO-252 B C E Tube TIP41CL-x-TN3-R TIP41CG-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R203-008.G TIP41C NPN PLANAR TRANSISTOR ? MARKING INFORMATION PACKAGE MARKING TO-220/TO-220F TO-252 UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R203-008.G TIP41C NPN PLANAR TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TC=25?C, unless otherwise specified) PARAMETER SYMBOL RATING

1.13. tip41_tip42.pdf Size:189K _mospec

TIP41
TIP41
A A A A

1.14. tip41_a_b_c_tip42.pdf Size:317K _cdil

TIP41
TIP41
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP41, A, B, C NPN TIP42, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers ABSOLUTE MAXIMUM RATINGS (Ta=25?C) TIP41 TIP41A TIP41B TIP41C DESCRIPTION SYMBOL UNIT TIP42 TIP42A TIP42B TIP42C VCEO Collector Emitter Voltage 40 60 80 100 V Collector Base Voltage VCBO 40 60 80 100 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 6.0 A ICM Collector Current Peak 10 A IB Base Current 2.0 A Power Dissipation upto Tc=25?C PD 65 W Derate above 25?C 520 mW/?C Power Dissipation upto Ta=25?C PD 2.0 W Derate above 25?C 16 mW/?C Unclamped Inductive Load *E 62.5 mJ Energy Tstg Storage Temperature 150 ?C Tj Junction Temperature - 65 to +150 ?C THERMAL RESISTANCE Junction to Ca

1.15. tip41c.pdf Size:67K _kec

TIP41
TIP41
SEMICONDUCTOR TIP41C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP42C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D ?3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 VCBO L Collector-Base Voltage 100 V H 5.60 MAX C C J 1.37 MAX VCEO Collector-Emitter Voltage 100 V K 0.50 L 1.50 MAX M M VEBO Emitter-Base Voltage 5 V M 2.54 K N 4.70 MAX IC DC 6 O 2.60 1 2 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 10 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 IB Base Current 2 A 2. COLLECTOR (HEAT SINK) T 2.90 MAX 3. EMITTER Ta=25 2 W Collector Power PC Dissipation 65 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 Collector Emitter Sustain

1.16. tip41cf.pdf Size:436K _kec

TIP41
TIP41
SEMICONDUCTOR TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to TIP42CF. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R K _ 3.7 0.2 + L 1.2+0.25/-0.1 M VCBO Collector-Base Voltage 100 V 1.5+0.25/-0.1 M D D _ N 2.54 0.1 + VCEO Collector-Emitter Voltage 100 V _ P 6.8 0.1 + _ Q 4.5 0.2 + VEBO Emitter-Base Voltage 5 V _ + R 2.6 0.2 N N H S 0.5 Typ IC DC 6 Collector Current A ICP Pulse 10 1. BASE 1 2 3 IB Base Current 2 A 2. COLLECTOR 2 W Ta=25 3. EMITTER Collector Power PC Dissipation 25 W Tc=25 TO-220IS Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS

1.17. tip41_41a_41b_41c.pdf Size:180K _inchange_semiconductor

TIP41
TIP41
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors TIP41/41A/41B/41C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A 80V(Min)- TIP41B; 100V(Min)- TIP41C ·Complement to Type TIP42/42A/42B/42C APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT TIP41 40 TIP41A 60 VCBO Collector-Base Voltage V TIP41B 80 TIP41C 100 TIP41 40 TIP41A 60 VCEO Collector-Emitter Voltage V TIP41B 80 TIP41C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IBB Base Current 2 A Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Storage Temperature Range -65~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconducto

1.18. tip41d_41e_41f.pdf Size:119K _inchange_semiconductor

TIP41
TIP41
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP41D/41E/41F DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type TIP42D/42E/42F APPLICATIONS Ў¤ For medium power linear switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ўж ) SYMBOL VCBO Collector-base voltage PARAMETER TIP41D TIP41E VCEO CHA IN E SEM NG TIP41F TIP41D TIP41E TIP41F Open base Open emitter OND IC CONDITIONS TOR UC VALUE 160 180 200 120 140 160 UNIT V Collector-emitter voltage V VEBO IC ICM IB Emitter-base voltage Collector current (DC) Collector current-Pulse Base current Open collector 5 6 10 3 V A A A TC=25Ўж PC Collector power dissipation Ta=25Ўж Tj Tstg Junction temperature Storage temperature 65 W 2 150 -65~150 Ўж Ўж

1.19. tip41_abc.pdf Size:203K _lge

TIP41
TIP41
TIP41/41A/41B/41C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ? Tstg Storage Temperature Range -55to+150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage TIP41 40 TIP41A 60 V(BR)CBO IC= 1mA, IE=0 V TIP41B 80 TIP41C 100 Collector-emitter breakdown voltage TIP41 40 TIP41A 60 V(BR)CEO IC= 30mA, IB=0 V TIP41B 80 TIP41C 100 Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 5 V Collector cut-off curre

1.20. tip41.pdf Size:130K _wietron

TIP41
TIP41
TIP41 Series NPN Silicon Power Transistor P b Lead(Pb)-Free COLLECTOR 2 1 BASE 2 FEATURES: 3 1 * Medium Power Linear Switching Applications 1. BASE 2. COLLECTOR 3. EMITTER 3 TO-220 EMITTER MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 60 V 40 80 100 VCEO Collector-Emitter Voltage 100 V 40 60 80 VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature ? 150 Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT TIP41 40 TIP41A 60 V Collector-base breakdown voltage =0 V(BR)CBO IC=1mA, IE 80 TIP41B 100 TIP41C TIP41 40 TIP41A 60 V(BR)CEO Collector-emitter breakdown voltage IC=30mA, IB =0 V TIP41B 80 100 TIP41C Emitter-base breakdown voltage V(BR)EBO 5 IE= 1mA, IC V =0 TIP

1.21. htip41c.pdf Size:42K _hsmc

TIP41
TIP41
Spec. No. : HE6707 HI-SINCERITY Issued Date : 1993.01.13 Revised Date : 2004.11.19 MICROELECTRONICS CORP. Page No. : 1/4 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 65 W Total Power Dissipation (TA=25°C) .....................................................................................................................

1.22. tip41p.pdf Size:176K _blue-rocket-elect

TIP41
TIP41
TIP41P(3DA41P) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率线性开关。 Purpose: Medium power linear switching applications. 特点:与 TIP42P(3CA42P)互补。 Features: Complement to TIP42P(3CA42P). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbo Rating Unit 100 V V CBO 100 V V CEO V 5 V EBO I 6 A C I 10 A CP I 2 A B P 3 W C P (Tc=25℃) 100 W C T 150 ℃ j T -55~150 ℃ sag 电性能参数/Electrical characteristics(Ta=25℃) 数值 参数符号 测试条件 Rating 单位 Symbol Test condition 最小值 典型值 最大值 Unit Min Typ Max V I =30mA I =0 100 V CEO C B I V =60V I =0 0.7 mA CEO CE B I V =100V V =0 400 μA CES CE EB I V =5V I =0 1 mA EBO EB C h V =4V I =3A 15 75 FE(1) CE C h V =4V I =0.3A 30 FE(2) CE C V I =6A I =0.6A 1.5 V CE(sat) C B V I =6A V =4V 2 V BE C CE f V =10V I =500mA 3 MHz T CE C 佛 山 市 蓝 箭 电

1.23. tip41c.pdf Size:204K _semtech

TIP41
TIP41
TIP41C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 100 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 5 V Emitter Base Voltage VEBO 6 A Collector Current IC 10 A Collector Current (Pulse) ICP 2 A Base Current IB O 2 W Power Dissipation (Ta = 25 C) Ptot O Power Dissipation (Tc = 25 C) Ptot 65 W O Junction Temperature Tj 150 C O Storage Temperature Range Tstg - 65 to + 150 C O Characteristics at Ta = 25 C Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 4 V, IC = 0.3 A hFE 30 - - at VCE = 4 V, IC = 3 A hFE 15 75 - Collector Emitter Cutoff Current ICES - 0.4 mA at VCE = 100 V Collector Emitter Cutoff Current ICEO - 0.7 mA at VCE = 60 V Emitter Base Cutoff Current IEBO - 1 mA at VEB = 5 V Collector Emitter Breakdown Voltage V(BR)CEO 100 - V at IC = 30 mA Co

Otros transistores... TIP35F , TIP36 , TIP36A , TIP36B , TIP36C , TIP36D , TIP36E , TIP36F , S9018 , TIP41A , TIP41B , TIP41C , TIP41D , TIP41E , TIP41F , TIP42 , TIP42A .

 

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