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UMC5N
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: UMC5N
Material: Si
Polaridad de transistor: p*n
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
Tensión colector-base (Ucb): 50
Tensión colector-emisor (Uce): 0
Tensión emisor-base (Ueb): 0
Corriente del colector DC máxima (Ic): 0.1
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 140
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 80
Empaquetado / Estuche: SO6
Búsqueda de reemplazo de transistor bipolar UMC5N
UMC5N
- PDF Hoja de especificaciones para ver o descargar
1.1. umc5n.pdf  Size:106K _rohm 1.2. umc5n_fmc5a_c5_sot23-5_sot353.pdf Size:107K _rohm 1.3. umc5n.pdf Size:283K _diodes  |
 | = 5mA
Gain-Bandwidth Product fT ? 250 ? MHz VCE = 10V, IE = -5mA, f = 100MHz*
Input Resistance R1 32.9 47 61.1 k? ?
Resistance Ratio R2/R1 0.8 1 1.2 ? ?
*Characteristics of Transistor for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q2 @TA = 25C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
VI(off) ? ? -0.3 V VCC = -5V, IO = -100?A
Input Voltage
VI(on) -2.5 ? ? V VO = -0.3V, IO = -20mA
Output Voltage VO(on) ? -0. |
1.4. umc2nt1g_umc3nt1g_umc5nt1g.pdf Size:158K _onsemi  |
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Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO - - 500 nAdc
Emitter-Base Cutoff Current UMC2NT1G IEBO - - 0.2 mAdc
(VEB = 6.0, IC = 0 mA) UMC3NT1G - - 0.5
UMC5NT1G / T2G - - 1.0
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V |
Otros transistores... UMB6N
, UMB7N
, UMB8N
, UMB9N
, UMC1N
, UMC2N
, UMC3N
, UMC4N
, 2N2907
, UMC6N
, UMC7N
, UMD10N
, UMD14N
, UMD16N
, UMD1N
, UMD2N
, UMD3N
.
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