BCW30L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: BCW30L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225
Tensión colector-base (Ucb): 0
Tensión colector-emisor (Uce): 32
Tensión emisor-base (Ueb): 0
Corriente del colector DC máxima (Ic): 0.1
Temperatura operativa máxima (Tj), °C:
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 0
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 215
Empaquetado / Estuche: SOT23-3
Búsqueda de reemplazo de transistor bipolar BCW30L
BCW30L
- PDF Hoja de especificaciones para ver o descargar
1.1. bcw29lt1_bcw30lt1.pdf Size:451K _motorola |
|
IC = 10 A
3.0
5.0
2.0
300 A
30 A
1.0
3.0
100 A
0.7
100 A
0.5
300 A
1.0 mA
2.0
0.3
30 A
0.2
10 A
1.0 0.1
10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 1. Noise Voltage Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
1.0 M 1.0 M
BANDWIDTH = 1.0 Hz
500 k 500 k
BANDWIDTH = 1.0 Hz
200 k 200 k
100 k 100 k
50 k 50 k
20 k 20 k
0.5 dB
10 k 10 k
0.5 d |
1.2. bcw30lt1-d.pdf Size:240K _onsemi |
| 0 -
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC = -10 mAdc, IB = -0.5 mAdc) - -0.3
Base-Emitter On Voltage VBE(on) Vdc
(IC = -2.0 mAdc, VCE = -5.0 Vdc) -0.6 -0.75
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance Cobo pF
(IE = 0, VCB = -10 Vdc, f = 1.0 MHz) - 7.0
Noise Figure NF dB
(IC = -0.2 mAdc, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) - 10
TYPICAL NOISE CHARACTERISTICS
(VCE = - 5.0 Vdc, TA = 25C)
10 1.0
BANDWIDTH = 1.0 Hz
7.0
BANDWIDTH = 1.0 Hz
RS ? 0
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5.1. bcw29_bcw30_2.pdf Size:111K _philips |
| collector capacitance IE = Ie = 0; VCB = -10 V; f = 1 MHz - 4.5 - pF
fT transition frequency IC = -10 mA; VCE = -5 V; f = 100 MHz 100 - - MHz
F noise figure IC = -200 ?A; VCE = -5 V; RS = 2 k?; - - 10 dB
f = 1 kHz; B = 200 Hz
2004 Jan 13 3
NXP Semiconductors Product data sheet
PNP general purpose transistors BCW29; BCW30
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT23
D B E A
X
HE v M A
3
Q
A
A1
c
12
e1 bp
w M
B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (m |
5.2. bcw29_bcw30_4.pdf Size:47K _philips |
| z
F noise figure IC = -200 A; VCE = -5 V; RS =2k?; - - 10 dB
f = 1 kHz; B = 200 Hz
1999 Apr 13 3
Philips Semiconductors Product specification
PNP general purpose transistors BCW29; BCW30
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D B E A
X
HE v M A
3
Q
A
A1
c
12
e1 bp
w M
B Lp
e
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp c D E e e1 HE Lp Q v w
max.
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm 0.1 1.9 0.95 0.2 0.1
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5.3. bcw30.pdf Size:37K _st |
| r, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON |
5.4. fsbcw30.pdf Size:43K _fairchild_semi |
| .05 125 ?C
- 40 ?C
0
0
0.1 1 10 100 300
0.01 0.1 1 10 100
I - COLLECTOR CURRENT (mA)
I - COLLECTOR CURRENT (mA) C
C
P68
Base-Emitter Saturation Base Emitter ON Voltage vs
Voltage vs Collector Current Collector Current
1.2 1
? = 10
1
0.8
- 40 ?C
0.8
25 C
- 40 ?C
0.6
25 C 125 ?C
125 ?C
0.6
0.4
0.4
V CE = 5V
0.2
0.2
0
0
0.1 1 10 100 300
0.1 1 10 100 200
I - COLLECTOR CURRENT (mA)
C I C - COLLECTOR CURRENT (mA)
Collector-Cutoff Current Collector-Emitter Breakdown |
5.5. bcw30.pdf Size:45K _fairchild_semi |
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