NSS40501UW3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS40501UW3

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5

Tensión colector-base (Ucb): 0

Tensión colector-emisor (Uce): 40

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 7

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 250

Empaquetado / Estuche: WDFN-3

Búsqueda de reemplazo de transistor bipolar NSS40501UW3

NSS40501UW3 - PDF Hoja de especificaciones para ver o descargar

1.1. nss40501uw3-d.pdf Size:79K _onsemi

not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 1. FR- 4 @ 100 mm2, 1 oz copper traces. 2. FR- 4 @ 500 mm2, 1 oz copper traces. � Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: June, 2007 - Rev. 3 NSS40501UW3/D NSS40501UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector - Emitte

3.1. nss40500uw3t2g.pdf Size:108K _onsemi

ctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. � Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: March, 2007 - Rev. 1 NSS40500UW3/D NSS40500UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symb

5.1. nss40301md.pdf Size:106K _onsemi

acteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) PD 576 mW TA = 25�C Derate above 25�C 4.6 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 217 �C/W Total Device Dissipation (Note 2) PD 676 mW TA = 25�C Derate above 25�C 5.4 mW/�C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 185 �C/W DUAL HEATED (Note 3) Total Device Dissipation (Note 1) PD 653 mW TA = 25�C Derate above 25�C 5.2 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1) RqJ

5.2. nss40601cf8-d.pdf Size:88K _onsemi

500 mm2, 1 oz copper traces. NSS40601CF8T1G ChipFET 3000/ (Pb-Free) Tape & Reel �For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. � Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: May, 2007 - Rev. 1 NSS40601CF8/D NSS40601CF8T1G ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Characteristic Symbol Min Typical Max Unit O

5.3. nss40201l.pdf Size:126K _onsemi

SS40201LT1G SOT-23 3000/Tape & Reel 1. FR-4 @ 100 mm2, 1 oz. copper traces. (Pb-Free) 2. FR-4 @ 500 mm2, 1 oz. copper traces. �For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. � Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: August, 2009 - Rev. 5 NSS40201L/D NSS40201LT1G ELECTRICAL CHARACTERISTICS (TA = 25�C unless otherwise noted) Ch

5.4. nss40200l.pdf Size:126K _onsemi

nditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. �For information on tape and reel specifications, 1. FR-4 @ 100 mm2, 1 oz. copper traces. including part orientation and tape sizes, please 2. FR-4 @ 500 mm2, 1 oz. copper traces. refer to our Tape and Reel Packaging Specification 3. Thermal response. Brochure, BRD8011/D. � Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: August, 20

5.5. nss40400cf8t1g.pdf Size:48K _onsemi

ons, normal operating conditions) and are not valid simultaneously. If these limits are including part orientation and tape sizes, please exceeded, device functional operation is not implied, damage may occur and refer to our Tape and Reel Packaging Specifications reliability may be affected. Brochure, BRD8011/D. 1. FR-4 @ 100 mm2, 2 oz copper traces. 2. FR-4 @ 500 mm2, 2 oz copper traces. 3. Thermal response. � Semiconductor Components Industries, LLC, 2006 1 Publication Order Number

5.6. nss40600cf8-d.pdf Size:128K _onsemi

) Tape & Reel Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. �For information on tape and reel specifications, 2. FR-4 @ 500 mm2, 1 oz copper traces. including part orientation and tape sizes, please 3. Thermal response. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. � Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: November, 2009 - Rev. 2 NSS40600CF8/D NSS40600CF8T1G ELECTR

5.7. nss40302p.pdf Size:119K _onsemi

al Device Dissipation (Note 2) PD 676 mW TA = 25�C Derate above 25�C 5.4 mW/�C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 185 �C/W DUAL HEATED (Note 3) Total Device Dissipation (Note 1) PD 653 mW TA = 25�C Derate above 25�C 5.2 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 191 �C/W Total Device Dissipation (Note 2) PD 783 mW TA = 25�C Derate above 25�C 6.3 mW/�C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 160 �C/W Junction and Storage Temperature R

5.8. nss40300md.pdf Size:106K _onsemi

haracteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) PD 576 mW TA = 25�C Derate above 25�C 4.6 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 217 �C/W Total Device Dissipation (Note 2) PD 676 mW TA = 25�C Derate above 25�C 5.4 mW/�C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 185 �C/W DUAL HEATED (Note 3) Total Device Dissipation (Note 1) PD 653 mW TA = 25�C Derate above 25�C 5.2 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1)

5.9. nss40301mz4.pdf Size:108K _onsemi

IIIIIIII IIIII IIII III IIII III Collector Current - Continuous IC 3.0 Adc IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III 5.0 Collector Current - Peak IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III Total Power Dissipation PD W IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III 2.0 Total PD @ TA = 25�C mounted on 1� sq. (645 sq. mm) Collector pad on FR-4 bd material IIIIIIIIIIIIIIIIIIIIIIII IIIII Total PD @ TA = 25�C mounted on 0.012� sq. (7.6 sq. mm) Collector pa

5.10. nss40300mz4.pdf Size:109K _onsemi

IIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III Collector Current - Continuous IC 3.0 Adc 5.0 Collector Current - Peak IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III Total Power Dissipation PD W 2.0 Total PD @ TA = 25�C mounted on 1� sq. (645 sq. mm) Collector pad on FR-4 bd material IIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III 0.80 Total PD @ TA = 25�C mounted on 0.012� sq. (7.6 sq. mm) Col

5.11. nss40300d.pdf Size:104K _onsemi

Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 185 �C/W DUAL HEATED (Note 3) Total Device Dissipation (Note 1) PD 653 mW TA = 25�C Derate above 25�C 5.2 mW/�C Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 191 �C/W Total Device Dissipation (Note 2) PD 783 mW TA = 25�C Derate above 25�C 6.3 mW/�C Thermal Resistance, Junction-to-Ambient (Note 2) RqJA 160 �C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 �C 1. FR-4 @ 10 mm2, 1 oz. copper traces, still air.

Otros transistores... NSS40201L , NSS40300 , NSS40300DD , NSS40300MD , NSS40301 , NSS40301MD , NSS40302PD , NSS40500UW3 , KD602 , NSS40600CF8 , NSS40601CF8 , NSS60200LT1G , NSS60201LT1G , NSS60600 , NSS60601MZ4 , NST30010MXV6 , NST3904DP6 .