2SA1932 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1932

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.8

Tensión colector-base (Ucb): 0

Tensión colector-emisor (Uce): 230

Tensión emisor-base (Ueb): 0

Corriente del colector DC máxima (Ic): 1

Temperatura operativa máxima (Tj), °C:

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 0

Empaquetado / Estuche: TPL

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2SA1932 PDF doc:

1.1. 2sa1932.pdf Size:197K _toshiba

4.1. 2sa1933.pdf Size:181K _toshiba

4.2. 2sa1937.pdf Size:194K _toshiba

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm � High voltage: VCEO = -600 V Maximum Ratings (Ta = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25 A Ta = 25�C 1 Collector power PC W dissipation Tc = 25�C 10 Junction temperature Tj 150 �C JEDEC ? Storage temperature range Tstg -55 to 150 �C JEITA ? TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2002-07-23 2SA1937 Electrical Characteristics (Ta = 25�C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -600 V, IE = 0 ? ? -10 �A Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -1 �A Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -600 ? ? V hFE (1) VCE = -5 V, IC = -20 mA 100 ? 500 DC current gain hF

4.3. 2sa1931.pdf Size:126K _toshiba

2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications Unit: mm � Low saturation voltage: VCE (sat) = -0.4 V (max) � High-speed switching time: tstg = 1.0 ?s (typ.) � Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25�C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -7 V Collector current IC -5 A Base current IB -1 A Ta = 25�C 2.0 Collector power PC W dissipation Tc = 25�C 20 JEDEC ? Junction temperature Tj 150 �C JEITA SC-67 Storage temperature range Tstg -55 to 150 �C TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo

4.4. 2sa1934.pdf Size:236K _toshiba

4.5. 2sa1939.pdf Size:170K _toshiba

4.6. 2sa1930.pdf Size:119K _toshiba

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications � High transition frequency: fT = 200 MHz (typ.) � Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25�C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -180 V Collector-emitter voltage VCEO -180 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -1 A Ta = 25�C 2.0 Collector power PC W dissipation Tc = 25�C 20 JEDEC ? Junction temperature Tj 150 �C JEITA SC-67 Storage temperature range Tstg -55 to 150 �C TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolu

4.7. 2sa1939.pdf Size:24K _wingshing

2SA1939 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC5196 ABSOLUTE MAXIMUM RATING (Ta=25�c c) c c Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -6 A Collector Dissipation PC 60 W Junction Temperature Tj 150 �C Storage Temperature Tstg -55~150 �C ELECTRICAL CHARACTERISTICS (Ta=25�c c) c c Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -120 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -80 V Emitter Base Breakdown Voltage BVEBO -6 V RBE=? Collector Cutoff Current ICBO -0.1 mA IE=-5mA IC=0 Emitter Cutoff Current IEBO -0.1 mA VCB=-40V IE=0 *DC Current Gain hFE1 55 160 VEB=-4V IC=0 DC Current Gain hFE2 50 VCE=-5V IC=-1A Collector- Emitter Saturation Vo

4.8. 2sa1939.pdf Size:168K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 DESCRIPTION · ·With TO-3P(I) package ·Complement to type 2SC5196 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -0.6 A PC Collector power dissipation TC=25? 60 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1939 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMET

Otros transistores... 2SA1892 , 2SA1905 , 2SA1923 , 2SA1924 , 2SA1925 , 2SA1926 , 2SA1930 , 2SA1931 , TIP41C , 2SA1933 , 2SA1934 , 2SA1937 , 2SA1939 , 2SA1940 , 2SA1941 , 2SA1942 , 2SA1962 .