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TPCP8501
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: TPCP8501
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0
Tensión colector-base (Ucb): 0
Tensión colector-emisor (Uce): 100
Tensión emisor-base (Ueb): 0
Corriente del colector DC máxima (Ic): 2
Temperatura operativa máxima (Tj), °C:
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft):
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 0
Empaquetado / Estuche: PS-8(2.9_x_2.8)
Búsqueda de reemplazo de transistor bipolar TPCP8501
TPCP8501
- PDF Hoja de especificaciones para ver o descargar
3.1. tpcp8504_en_datasheet_061113.pdf  Size:196K _toshiba2  |
 | lector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ? ? V
hFE (1) VCE = 2 V, IC = 0.2 A 400 ? 1000
DC current gain
hFE (2) VCE = 2 V, IC = 0.6 A 200 ? ?
Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ? ? 0.12 V
Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA ? ? 1.1 V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ? 10 ? pF
Rise time tr ? 60 ?
See Figure 3 circuit diagram
?
Switching time Storage time tstg VCC - |
3.2. tpcp8507_en_datasheet_061113.pdf Size:171K _toshiba2  |
 | EB = 7 V, IC = 0 ? ? 100 nA
Collector-emitter breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ? ? V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ? ? V
hFE(1) VCE = 2 V, IC =? 0.1A 120 ? 300
DC current gain
hFE(2) VCE = 2 V, IC =? 0.3A 60 ? ?
Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.01A ? ? 0.14 V
Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.01A ? ? 1.1 V
Storage time tr ? ?
0.1
See Figure 3 circuit diagram.
Stor |
3.3. tpcp8505_en_datasheet_061113.pdf Size:210K _toshiba2  |
 | cut-off current IEBO VEB = 7 V, IC = 0 ? ? 100 nA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 100 ? ? V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ? ? V
hFE (1) VCE = 2 V, IC = 0.3 A 400 ? 1000
DC current gain
hFE (2) VCE = 2 V, IC = 1.0 A 200 ? ?
Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ? ? 0.14 V
Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ? ? 1.1 V
Rise time tr ? 40 ?
See Figure 3 circuit di |
Otros transistores... TPC6503
, TPC6504
, TPC6601
, TPC6602
, TPC6603
, TPC6604
, TPC6701
, TPC6D03
, KT805AM
, TPCP8504
, TPCP8505
, TPCP8507
, TPCP8510
, TPCP8511
, TPCP8601
, TPCP8602
, TPCP8603
.
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