TPCP8H02 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

o 150 �C Marking (Note 4) Type 8H02 * Lot No. (Weekly code) Note 4: The mark � � on the lower left of the marking indicates Pin 1. * Weekly code (three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (Last digit of the calendar year) Electrical Characteristics (Ta = 25�C) Transistor Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 ? ? 100 nA Em

5.1. tpcp8504_en_datasheet_061113.pdf Size:196K _toshiba2

lector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 ? ? V hFE (1) VCE = 2 V, IC = 0.2 A 400 ? 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.6 A 200 ? ? Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ? ? 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.6 A, IB = 12 mA ? ? 1.1 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ? 10 ? pF Rise time tr ? 60 ? See Figure 3 circuit diagram ? Switching time Storage time tstg VCC -

5.2. tpcp8406_en_datasheet_110314.pdf Size:351K _toshiba2

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2011-03-14 2 Rev.2.0 TPCP8406 5. Thermal Characteristics 5. Thermal Characteristics 5. Thermal Characteristics 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84

5.3. tpcp8j01.pdf Size:552K _toshiba2

utions�/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch-a) 58.4 �C/W (t = 5 s) (Note 2a) Thermal resistance, channel to ambient Rth (ch-a) 117.9 �C/W (t = 5 s) (Note 2b) Note 1: Ensure that the channel temperature does not exceed 150�C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Devic

5.4. tpcp8507_en_datasheet_061113.pdf Size:171K _toshiba2

EB = 7 V, IC = 0 ? ? 100 nA Collector-emitter breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 180 ? ? V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 ? ? V hFE(1) VCE = 2 V, IC =? 0.1A 120 ? 300 DC current gain hFE(2) VCE = 2 V, IC =? 0.3A 60 ? ? Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.01A ? ? 0.14 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.01A ? ? 1.1 V Storage time tr ? ? 0.1 See Figure 3 circuit diagram. Stor

5.5. tpcp8007-h_en_datasheet_090812.pdf Size:181K _toshiba2

nit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25�C (initial), L = 500 ?H, RG = 1 ?, IAR = 5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-08-12 TPCP8007-H Electrical Characteristics (Ta = 25�C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage curr

5.6. tpcp8510_en_datasheet_090714.pdf Size:211K _toshiba2

60 ? ? Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 0.01 A ? ? 0.14 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 0.01 A ? ? 1.1 V Rise time tr ? 0.1 ? See Figure 3 circuit diagram Switching time Storage time tstg VCC ? 72 V, RL = 240 ? ? 1.5 ? ?s Fall time tf IB1 = IB2 = 10 mA ? 0.2 ? Figure 3. Switching Time Test Circuit VCC 20?s RL IB1 IB1 Output 0 IB2 Input Duty cycle<1% IB2 2 2009-07-14 TPCP8510 IC � VCE hFE � IC 1.0

5.7. tpcp8204_en_datasheet_100908.pdf Size:250K _toshiba2

teristics Characteristics Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-a) (2) 101.6 dual operation (Note 3b) Single-device operation Rth (ch-a) (1) 215.5 Thermal resistance, (Note 3a) channel to ambient �C/W Single-device value at (t = 5 s) (Note 2b) Rth (ch-a) (2) 347.2 dual operation (Note 3b) Note 1: The channel temperature should not exceed 150�C

5.8. tpcp8701.pdf Size:211K _toshiba2

? 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ? 13 ? pF Rise time tr ? 40 ? See Figure 3 circuit diagram ? Switching time Storage time tstg VCC - 30 V, RL = 30 ? ? 500 ? ns IB1 = -IB2 = 33.3 mA Fall time tf ? 120 ? Figure 3. Switching Time Test Circuit & Timing Chart VCC 20�s RL IB1 Output IB1 IB2 Input Duty cycle <1% IB2 2 2004-05-11 TPCP8701 IC � VCE hFE � IC 4 10000 Common emitter Common emitter Ta = 25�C VCE = 2 V Single non

5.9. tpcp8604_en_datasheet_070607.pdf Size:172K _toshiba2

400 Collector-emitter saturation voltage VCE (sat) IC = -100 mA, IB = -10 mA ? -0.4 -1.0 V Base-emitter voltage VBE (sat) IC = -100 mA, IB = -10 mA ? -0.76 -0.9 V Transition frequency fT VCE = -5 V, IC = -50 mA ? 35 ? MHZ Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1 MHz ? 18 ? pF Output 20 ?s IB1 Turn-on time ton ? 0.2 ? Input IB2 Switching time Storage time tstg ? 2.3 ? ?s VCC = -200 V IB1 = -10 mA, IB2 = 20 mA, Fall time tf ? 0.2 ? Duty cycle ? 1% 2 2007-0

5.10. tpcp8405_en_datasheet_110314.pdf Size:347K _toshiba2

riate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2011-03-14 2 Rev.2.0 TPCP8405 5. Thermal Characteristics 5. Thermal Characteristics 5. Thermal Characteristics 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(

5.11. tpcp8205-h_en_datasheet_110314.pdf Size:233K _toshiba2

tics 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single (t = 5 s) (Note 2),(Note 4) Rth(ch-a)(1) 84.5 ?/W operation) Channel-to-ambient thermal resistance (per device for (t = 5 s) (Note 2),(Note 5) Rth(ch-a)(2) 101.6 dual operation) Channel-to-ambient thermal resistance (single (t = 5 s) (Note 3),(Note 4) Rth(ch-a)(1) 215.5 operation) Channel-to-ambient thermal resistance (per device for (t = 5 s) (Note 3),(Note 5) Rth(ch-a)(2) 347.

5.12. tpcp8106_en_datasheet_110704.pdf Size:224K _toshiba2

ard (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -24 V, Tch = 25? (initial), L = 0.2 mH, RG = 25 ?, IAR = -5.2 A Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Bo

5.13. tpcp8306_en_datasheet_100803.pdf Size:229K _toshiba2

esistance (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84.4 ?/W (single operation) Channel-to-ambient thermal resistance (t = 5 s) (Note 2), (Note 5) Rth(ch-a)(2) 101.6 (per device for dual operation) Channel-to-ambient thermal resistance (t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) 215.5 (single operation) Channel-to-ambient thermal resistance (t = 5 s) (Note 3), (Note 5) Rth(ch-a)(2) 347.2 (per device for dual operation) Note 1: Ensure that the channel temperature does not exceed 150?. Note

5.14. tpcp8202.pdf Size:225K _toshiba2

acteristic Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-a) (2) 101.6 dual operation (Note 3b) Single-device operation Rth (ch-a) (1) 215.5 Thermal resistance, (Note 3a) channel to ambient �C/W Single-device value at (t = 5 s) (Note 2b) Rth (ch-a) (2) 347.2 dual operation (Note 3b) Note 1: Ensure that the channel temperature does not exceed 150�C. N

5.15. tpcp8301.pdf Size:509K _toshiba2

1 2006-11-17 2.4�0.1 2.8�0.1 TPCP8301 Thermal Characteristics Characteristic Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-a) (2) 101.6 dual operation (Note 3b) Single-device operation Rth (ch-a) (1) 215.5 Thermal resistance, (Note 3a) channel to ambient �C/W Single-device value at (t = 5 s) (Note 2b) Rth (ch-a) (2) 347.2 dual operation (Note 3b)

5.16. tpcp8f01.pdf Size:255K _toshiba2

tor-emitter saturation voltage VCE (sat) IC = -1.6 A, IB = -53 mA ? ? -0.19 V Base-emitter saturation voltage VBE (sat) IC = -1.6 A, IB = -53 mA ? ? -1.10 V Collector Output Capacitance Cob VCB = -10 V, IE = 0, f = 1MHz ? 28 ? pF Rise time tr ? 70 ? See Figure 3 circuit diagram ? Switching time Storage time tstg VCC - -12 V, RL = 7.5 ? ? 150 ? ns -IB1 = IB2 = -53 mA Fall time tf ? 40 ? Figure 3. Switching Time Test Circuit & Timing Chart 20us Vout IB1 IB2 RL Vin IB1 Dut

5.17. tpcp8601_en_datasheet_050204.pdf Size:200K _toshiba2

? 170 ? ns L IB1 = -IB2 = -67 mA Fall time tf ? 35 ? Figure 3. Switching Time Test Circuit & Timing Chart VCC B2 I Output B1 I B1 I Input 20?s B2 I Duty cycle <1% 2 2004-12-10 RL TPCP8601 IC � VCE hFE � IC -5 1000 Common emitter Ta = 100�C Ta = 25�C Single nonrepetitive pulse 25 -4 -30 -20 -55 -15 -3 100 -10 -2 -8 -6 -4 -1 Common emitter VCE = -2 V IB = -2 mA Single nonrepetitive pulse 10 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.

5.18. tpcp8006_en_datasheet_091208.pdf Size:215K _toshiba2

re does not exceed 150�C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 ? 25.4 ? 0.8t 25.4 ? 25.4 ? 0.8t (Unit: mm) (Unit: mm) (a) (b) Note 3: VDD = 16 V, Tch = 25�C (initial), L = 0.2 mH, RG = 25 ?, IAR = 9.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: ? on the lower left of the marking indicates Pin 1. * Weekly code (Three digits): Week of manufacture (01 for t

5.19. tpcp8404_en_datasheet_100201.pdf Size:286K _toshiba2

g Concept and Methods�) and individual reliability data (i.e. reliability test report 1 2 3 4 and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with caution. Lot No. 1 2010-02-01 2.4�0.1 2.8�0.1 TPCP8404 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-a) (2) 101.6

5.20. tpcp8004_en_datasheet_081218.pdf Size:189K _toshiba2

s) (Note 2b) Note 1: Ensure that the channel temperature does not exceed 150�C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 ? 25.4 ? 0.8 25.4 ? 25.4 ? 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: VDD =24V, Tch = 25�C (initial), L =0.2mH, RG = 1 ?, IAR =8.3 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ?on the lower left of the marking indicates Pin 1. ? Weekly code: (Three

5.21. tpcp8902_en_datasheet_090611.pdf Size:243K _toshiba2

4: ? on lower left on the marking indicates Pin 1. (Weekly code) ? Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25�C) PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -30 V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 nA Collector-emitter breakdown

5.22. tpcp8j01_en_datasheet_061117.pdf Size:311K _toshiba2

s�/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch-a) 58.4 �C/W (t = 5 s) (Note 2a) Thermal resistance, channel to ambient Rth (ch-a) 117.9 �C/W (t = 5 s) (Note 2b) Note 1: Ensure that the channel temperature does not exceed 150�C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mou

5.23. tpcp8602_en_datasheet_061113.pdf Size:201K _toshiba2

A Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 nA Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -50 ? ? V hFE (1) VCE = -2 V, IC = -0.3 A 200 ? 500 DC current gain hFE (2) VCE = -2 V, IC = -1.0 A 100 ? ? Collector-emitter saturation voltage VCE (sat) IC = -1 A, IB = -33 mA ? ? -0.2 V Base-emitter saturation voltage VBE (sat) IC = -1 A, IB = -33 mA ? ? -1.1 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ? 20 ? pF Rise time tr ? 60

5.24. tpcp8g01_en_datasheet_090714.pdf Size:201K _toshiba2

-100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 nA Collector-emitter breakdown voltage V (BR) CEO IC = -10 mA, IB = 0 -20 ? ? V hFE (1) VCE = -2 V, IC = -0.5 A (Note4) 200 ? 500 DC current gain hFE (2) VCE = -2 V, IC = -1.6 A (Note4) 100 ? ? Collector-emitter saturation voltage VCE (sat) IC = -1.6 A, IB = -53 mA (Note4) ? ? -0.19 V Base-emitter saturation voltage VBE (sat) IC = -1.6 A, IB = -53 mA (Note4) ? ? -1.10 V Collector output capacitance Cob VCB = -10 V, I

5.25. tpcp8305_en_datasheet_110314.pdf Size:226K _toshiba2

Unit Channel-to-ambient thermal resistance (single (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84.5 ?/W operation) Channel-to-ambient thermal resistance (per device for (t = 5 s) (Note 2), (Note 5) Rth(ch-a)(2) 101.6 dual operation) Channel-to-ambient thermal resistance (single (t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) 215.5 operation) Channel-to-ambient thermal resistance (per device for (t = 5 s) (Note 3), (Note 5) Rth(ch-a)(2) 347.2 dual operation) Note 1: Ensure that the channel temp

5.26. tpcp8303_en_datasheet_100114.pdf Size:221K _toshiba2

ermal Characteristics Characteristic Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-a) (2) 101.6 dual operation (Note 3b) Single-device operation Rth (ch-a) (1) 215.5 Thermal resistance, (Note 3a) channel to ambient �C/W Single-device value at (t = 5 s) (Note 2b) Rth (ch-a) (2) 347.2 dual operation (Note 3b) Note 1: Ensure that the channel temperature d

5.27. tpcp8505_en_datasheet_061113.pdf Size:210K _toshiba2

cut-off current IEBO VEB = 7 V, IC = 0 ? ? 100 nA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IB = 0 100 ? ? V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ? ? V hFE (1) VCE = 2 V, IC = 0.3 A 400 ? 1000 DC current gain hFE (2) VCE = 2 V, IC = 1.0 A 200 ? ? Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ? ? 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ? ? 1.1 V Rise time tr ? 40 ? See Figure 3 circuit di

5.28. tpcp8901_en_datasheet_061113.pdf Size:224K _toshiba2

ndicates Pin 1. ? Weekly code: (Three digits) Lot No. (Weekly code) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25�C) PNP Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = -50 V, IE = 0 ? ? -100 nA Emitter cut-off current IEBO VEB = -7 V, IC = 0 ? ? -100 nA Collector-emitter breakdown voltage V (BR) CEO IC = -

5.29. tpcp8203_en_datasheet_070228.pdf Size:232K _toshiba2

n a glass-epoxy board (b) 25.4 FR-4 FR-4 25.4 ? 25.4 ? 0.8 25.4 ? 25.4 ? 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values shown are for a single device. (During single-device operation, power is applied to one device only.) b) The power dissipation and thermal resistance values shown are for a single device. (During dual operation, power is applied to both devices evenly.). Note 4: VDD = 25 V, Tch = 25�C (initial), L = 0.5 mH, RG

5.30. tpcp8402.pdf Size:385K _toshiba2

ecautions�/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2 3 4 This transistor is an electrostatic-sensitive device. Handle with caution. Lot No. 1 2006-11-13 2.4�0.1 2.8�0.1 TPCP8402 Thermal Characteristics Characteristics Symbol Max Unit Single-device operation Rth (ch-a) (1) 84.5 Thermal resistance, (Note 3a) channel to ambient �C/W (t = 5 s) (Note 2a) Single-device value at Rth (ch-

5.31. tpcp8901.pdf Size:247K _toshiba2

125 ? ? Collector-emitter saturation voltage VCE (sat) IC = -0.3 A, IB = -0.01 A ? ? -0.20 V Base-emitter saturation voltage VBE (sat) IC = -0.3 A, IB = -0.01 A ? ? -1.10 V Collector output capacitance Cob VCB = -10 V, IE = 0, f = 1MHz ? 8 ? pF Rise time tr ? 60 ? See Figure 3 circuit diagram ? Switching time Storage time tstg VCC - -30 V, RL = 100 ? ? 280 ? ns -IB1 = IB2 = -10 mA Fall time tf ? 70 ? NPN Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-o

5.32. tpcp8105_en_datasheet_110602.pdf Size:230K _toshiba2

ure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -16 V, Tch = 25? (initial), L = 0.5 mH, RG = 25 ?, IAR = -7.2 A Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Fig. 5.1 Device Mounted on a Glass-Epoxy Fig. 5.2 Device Mounted on a Glass-Epoxy Board (a) Boar

Otros transistores... TPCP8511 , TPCP8601 , TPCP8602 , TPCP8603 , TPCP8604 , TPCP8701 , TPCP8901 , TPCP8H01 , BC137 , TTA0001 , TTA0002 , TTA003 , TTA004 , TTA007 , TTA1943 , TTC0001 , TTC0002 .


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