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C1815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C1815

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 50

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.15

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 130

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar C1815

 

C1815 PDF:

1.1. 2pc1815.pdf Size:50K _philips

C1815
C1815

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification 2004 Nov 05 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter Gene

1.2. 2pc1815_3.pdf Size:47K _philips

C1815
C1815

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter Gen

1.3. 2sc1815.pdf Size:272K _toshiba

C1815
C1815

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low n

1.4. 2sc1815-t.pdf Size:213K _toshiba

C1815
C1815

1.5. 2sc1815l.pdf Size:308K _toshiba

C1815
C1815

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95

1.6. ksc1815.pdf Size:44K _fairchild_semi

C1815
C1815

KSC1815 Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collecto

1.7. 2sc1815.pdf Size:227K _utc

C1815
C1815

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

1.8. c1815.pdf Size:174K _secos

C1815
C1815

C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 Top View C B 1 1 2 2 K E Collector MARKING: HF 3 D H J F G 1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B 2.1

1.9. c1815t.pdf Size:393K _secos

C1815
C1815

C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H ? Power Dissipation ?Emitter CLASSIFICATION OF hFE (1) J ?Collector ?Base A D Product-Rank C1815T-O C1815T-Y C1815T-GR Millimeter REF. B Min. Max. Range 70~140 120~240 200~400 A 4.40 4.70 K B 4

1.10. csc1815.pdf Size:247K _cdil

C1815
C1815

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSA1015 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V

1.11. ktc1815.pdf Size:803K _kec

C1815
C1815

SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ·Low Noise : NF=1dB(Typ.). at f=1kHz. ·Complementary to KTA1015. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Volta

1.12. 2sc1815-m.pdf Size:168K _microelectronics

C1815
C1815

1.13. c1815.pdf Size:830K _htsemi

C1815
C1815

C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junc

1.14. c1815_sot-23.pdf Size:218K _lge

C1815
C1815

C1815 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA

1.15. c1815_to-92.pdf Size:180K _lge

C1815
C1815

C1815 Transistor(NPN) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage Dimensions in inches and (millimeters) IC Collector Current -Continuous 150 mA PC Collector Power Dissipatio

1.16. c1815.pdf Size:291K _wietron

C1815
C1815

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO—92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25? unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 1 2 3 VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total Device

1.17. c1815lt1.pdf Size:230K _wietron

C1815
C1815

C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwis

1.18. c1815.pdf Size:477K _willas

C1815
C1815

FM120-M WILLAS THRU 1 15 SOT-23 Plastic-Encap sulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better rev SOD-123H SOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. • Low profi e surface mounted applica

1.19. hsc1815.pdf Size:46K _hsmc

C1815
C1815

Spec. No. : HE6523 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................

1.20. c1815.pdf Size:433K _can-sheng

C1815
C1815

SOT-23 Plastic –Encapsulate Transistors SOT- FEATURES 23 Power dissipation MARKING : MARKING : MARKING : C1815=HF MARKING : 1、 BASE 2、 EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 3、 COLLECTO Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units

1.21. c1815_sot-23.pdf Size:284K _can-sheng

C1815
C1815

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) FEATURES Power dissipation MARKING:HF MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage

1.22. 2sc1815m.pdf Size:729K _blue-rocket-elect

C1815
C1815

2SC1815M(BR3DG1815M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,电流大,有极好的 h 特性,低噪声系数。 FE High voltage and high current, excellent hFE linearity ,low noise. 用途 / Applications 用于普通低频放大,激励级放大

1.23. ftc1815.pdf Size:268K _first_silicon

C1815
C1815

SEMICONDUCTOR FTC1815 TECHNICAL DATA FEATURES B C General Purpose NPN Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage 60 V G 0.85 H 0.45 _ VCEO Collector-Emitter Voltage 50 V H J 14.00 + 0.50 L 2.30 F F VEBO Emitter-Ba

1.24. c1815.pdf Size:849K _shenzhen-tuofeng-semi

C1815
C1815

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) TO—92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage

1.25. 2sc1815.pdf Size:544K _shenzhen-tuofeng-semi

C1815
C1815

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

Otros transistores... 3DK2222A , A1015 , A42 , A44 , A733 , A92 , A94 , B772 , 2N4403 , C945 , CJF715 , D882 , HM4033 , HM879 , KTA1668 , KTA2014 , KTD1898 .

 


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