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100DA025D .. 2N1011
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2N3515 .. 2N3800DCSM
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2N4074 .. 2N466
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2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU826A
BU902 .. BUP23CF
BUP30 .. BUV90A
BUV90F .. BUY13
BUY13S .. CC338-40
CC5401 .. CFD1408
CFD1499 .. CK22C
CK25 .. CP100
CP1016 .. CSA1220O
CSA1220R .. CSC1674
CSC1674O .. CSD600K
CSD600KD .. D16P2
D16P3 .. D40DU4
D40DU5 .. D45VM2
D45VM3 .. DP350T05
DP500 .. DTA143T
DTA143TCA .. DTC314TV
DTC343TA .. ECG12
ECG123 .. ECG473
ECG474 .. ESM283
ESM2894 .. FCS9015C
FCS9016 .. FJX945
FJX945 .. FMMT597
FMMT6076 .. FV3502
FV3503 .. GC512K
GC515 .. GES5400R
GES5401 .. GMO656A
GP140 .. GT330G
GT330I .. HBDM60V600W
HBF422 .. HPT1012
HPT1210 .. IDD1407
IDD1408 .. JE9092
JE9092A .. KN4L3Z
KN4L4K .. KRA760E
KRA760F .. KRC831F
KRC831U .. KSB1017-O
KSB1017-R .. KSC2785-G
KSC2785-L .. KSD5041-P
KSD5041-Q .. KST56
KST63 .. KT3189V-9
KT3189V9 .. KT6128E
KT6128G .. KT8145A
KT8145B .. KT888A
KT888B .. KTB1151
KTB1234T .. KTD1937
KTD2058 .. MBT3904DW
MBT3904DW1 .. MJ10014
MJ10015 .. MJD32C
MJD32C-1 .. MJE5656
MJE5657 .. MM8002
MM8003 .. MMBT5551R
MMBT5551W .. MP10A
MP10B .. MP4965
MP500 .. MPS2906
MPS2906A .. MPSD02
MPSD03 .. MRF835
MRF840 .. NA11FH
NA11FI .. NB013EU
NB013EV .. NB212EI
NB212EJ .. NKT106
NKT107 .. NPS5131
NPS5132 .. NTE126A
NTE127 .. OC78D
OC78N .. PBSS4620PA
PBSS4630PA .. PH5416
PHD13003C .. PN706
PN706A .. RCA1001
RCA120 .. RN1507
RN1508 .. RN2705
RN2705JE .. S1381
S1382 .. SDM5011
SDM5012 .. SGSIF341
SGSIF343 .. SRA2211
SRA2211E .. STC4250F
STC4250L .. SYL1986
SYL2245 .. TA2333
TA2359A .. TIP127F
TIP127FP .. TIPP32A
TIPP32B .. TN3904
TN3904R .. TP708
TP750 .. UMX18N
UMX1N .. UN9214
UN9215Q .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

C1815 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C1815

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 50

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.15

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 130

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar C1815

C1815 PDF doc:

1.1. 2pc1815.pdf Size:50K _philips

C1815
C1815
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification 2004 Nov 05 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification, e.g. audio amplifier driver stages. 1 handbook, halfpage 2 2 DESCRIPTION 3 1 NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2PC1815 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V

1.2. 2pc1815_3.pdf Size:47K _philips

C1815
C1815
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification, e.g. audio amplifier driver stages. 1 handbook, halfpage 2 2 DESCRIPTION 3 1 NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 150 mA ICM peak collector cu

1.3. 2sc1815.pdf Size:272K _toshiba

C1815
C1815
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) at f = 1 kHz Complementary to 2SA1015 (O, Y, GR class) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA JEDEC TO-92 Base current IB 50 mA JEITA SC-43 Collector power dissipation PC 400 mW Junction temperature Tj 125 C TOSHIBA 2-5F1B Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and

1.4. 2sc1815l.pdf Size:308K _toshiba

C1815
C1815
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Low noise: NF = 0.2dB (typ.) (f = 1 kHz). Complementary to 2SA1015 (L). (O, Y, GR class). Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V JEDEC TO-92 Collector current IC 150 mA JEITA SC-43 Base current IB 50 mA Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Weight: 0.21 g (typ.) Storage temperature range Tstg -55~125 C Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol

1.5. 2sc1815-t.pdf Size:213K _toshiba

C1815
C1815

1.6. ksc1815.pdf Size:44K _fairchild_semi

C1815
C1815
KSC1815 Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA IB Base Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 A IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 A hFE1 DC Current Gain VCE=6V, IC=2mA 70 700 hFE2 VCE=6V, IC=150mA 25 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V VBE (sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 1.0 V fT Current Gain Ba

1.7. 2sc1815.pdf Size:227K _utc

C1815
C1815
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC1815L-x-T92-B 2SC1815G-x-T92-B TO-92 E C B Tape Box 2SC1815L-x-T92-K 2SC1815G-x-T92-K TO-92 E C B Bulk 2SC1815L-x-T92-R 2SC1815G-x-T92-R TO-92 E C B Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-006.K 2SC1815 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-Base Voltage V 5 V EBO Collector Current I 150 mA C Base Current I 50 mA B Power Dissipation(T =25°C) P 625 mW A D

1.8. c1815t.pdf Size:393K _secos

C1815
C1815
C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H ? Power Dissipation ?Emitter CLASSIFICATION OF hFE (1) J ?Collector ?Base A D Product-Rank C1815T-O C1815T-Y C1815T-GR Millimeter REF. B Min. Max. Range 70~140 120~240 200~400 A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 125, -55 ~ 125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ

1.9. c1815.pdf Size:174K _secos

C1815
C1815
C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 Top View C B 1 1 2 2 K E Collector MARKING: HF 3 D H J F G 1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B 2.10 2.80 H 0.40 0.60 Emitter C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation Pc 200 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Co

1.10. csc1815.pdf Size:247K _cdil

C1815
C1815
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSA1015 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj, Tstg -55 to +125 ?C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to case 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS ICBO VCB =60V, IE=0 Collector Cut off Current 100 nA IEBO VEB=5V, IC = 0 Emitter Cut off Current 100 nA *hFE IC =2mA, VCE=6V DC Current Gain 70 700 hFE IC =150mA, VC

1.11. ktc1815.pdf Size:803K _kec

C1815
C1815
SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ·Low Noise : NF=1dB(Typ.). at f=1kHz. ·Complementary to KTA1015. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Collector Cut-off Current - - 0.1 ? A IEBO VEB=5V, IC=0 Emitter Cut-off Current - - 0.1 ? A hFE(1) (Note) VCE=6V, IC=2mA 70 - 700 DC Current Gain hFE(2) VCE=6V, IC=150mA 25 100 - VCE(sat) IC=100mA, IB=10mA Collector-Emitter

1.12. 2sc1815-m.pdf Size:168K _microelectronics

C1815
C1815

1.13. c1815.pdf Size:830K _htsemi

C1815
C1815
C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emit

1.14. c1815_to-92.pdf Size:180K _lge

C1815
C1815
C1815 Transistor(NPN) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage Dimensions in inches and (millimeters) IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW Tj Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100uA, IC=0 5 V Collector cut-off current ICBO VCB= 60V,IE=0 0.1 uA Collector cut-off current ICEO VCE= 50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA DC current gain hFE VCE= 6 V, IC= 2mA 70 700

1.15. c1815_sot-23.pdf Size:218K _lge

C1815
C1815
C1815 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60 V, IE=0 0.1 A Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage

1.16. c1815.pdf Size:291K _wietron

C1815
C1815
C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO—92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25? unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 1 2 3 VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 ? *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 uA Collector cut-off current ICEO VCE=

1.17. c1815lt1.pdf Size:230K _wietron

C1815
C1815
C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V Ic= 100µA, IE=0 60 V (BR)CBO 50 Collector-emitter breakdown voltage V(BR)CEO Ic = 0.1mA, IB =0 V Collector cut-off current I V =60V, I =0 0.1 µA CBO CB E Collector cut-off current I V =50V, I =0 0.1 µA CEO CE B Emitter cut-off current I V = 5V, I =0 0.1 µA EBO EB C DC current gain h V = 6V, I = 2mA 130 400 FE(1) CE C Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA V 0.25 Base-emitter saturation voltage V (sat) I =100 mA, I = 10mA 1 V BE C B VCE=10V,

1.18. c1815.pdf Size:477K _willas

C1815
C1815
FM120-M WILLAS THRU 1 15 SOT-23 Plastic-Encap sulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better rev SOD-123H SOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. • Low profi e surface mounted application in order to optimize bo FEATURES • Low power lard space. 0.146(3.7) oss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. Power dissipation • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 1. BASE 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) 2. EMITTER Pb-Free package is available • Silicon epitaxial planar chip, metal silicon junction. 3. COLLECTOR • Lead-free parts meet environmental standards of RoHS product for packing code suffix ”G” MIL-STD-19500 /228 MARKING : HF

1.19. hsc1815.pdf Size:46K _hsmc

C1815
C1815
Spec. No. : HE6523 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............................

Otros transistores... 3DK2222A , A1015 , A42 , A44 , A733 , A92 , A94 , B772 , 2N4403 , C945 , CJF715 , D882 , HM4033 , HM879 , KTA1668 , KTA2014 , KTD1898 .

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