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2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
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BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
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FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
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GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

S9014 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S9014

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2

Tensión colector-base (Ucb): 50

Tensión colector-emisor (Uce): 45

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 150

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 200

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar S9014

S9014 PDF doc:

1.1. ss9014.pdf Size:38K _fairchild_semi

S9014
S9014
SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 60 2

1.2. ss9014.pdf Size:47K _samsung

S9014
S9014
SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 45 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =50V, IE =0 50 nA Emitter Cut-off Current IEBO VEB =5V, IC =0 50 nA DC Current Gain hFE VCE =5V, IC =1mA 60 280 1000 Collector-Base Saturation Voltage VC

1.3. sts9014.pdf Size:207K _auk

S9014
S9014
STS9014 NPN Silicon Transistor Description PIN Connection • General purpose application C • Switching application Features B • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz E • Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Emitter current IE -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA DC current gain hFE* VCE=5V, IC=1mA 100 - 1000 - Collec

1.4. s9014.pdf Size:253K _secos

S9014
S9014
S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.1 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 50 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current I

1.5. s9014w.pdf Size:263K _secos

S9014
S9014
S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight: 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J6 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min.

1.6. s9014t.pdf Size:130K _secos

S9014
S9014
S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55±0.2 3.5±0.2 ? Power dissipation ? PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43+0.08 –0.07 46+0.1 0. –0.1 Operating & storage junction temperature (1.27 Typ.) O O Tj, Tstg : - 55 C ~ + 150 C 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC cur

1.7. s9014.pdf Size:821K _htsemi

S9014
S9014
S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25? Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitte

1.8. s9014w.pdf Size:458K _htsemi

S9014
S9014
S901 4W TRANSISTOR(NPN) SOT–323 FEATURES ? Complementary to S9015W ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 50 V (BR)CBO C E Collector-emitter breakdown voltage V I =100µA, I =0 45 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =50V, I =0 100 nA CBO CB E Collector cut-off current I V =35V, I =0 100 nA CEO CE B Emitter cu

1.9. s9014.pdf Size:241K _gsme

S9014
S9014
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE ? HFE:HFE=200?700 Low Noise ???:NF=1dB(Typ.),10dB(Max.). Complementary to GM9015 ? GM9015 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ????? MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO 50 Vdc ???-???? Collector-Emitter Voltage VCEO 45 Vdc ???-????? Emitter-Base Voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 150 mAdc ?????-?? Base Current IB 30 mAdc ???? Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9014=J6 GM9014=J6 GM9014=J6 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Mic

1.10. s9014_sot-23.pdf Size:198K _lge

S9014
S9014
S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE

1.11. s9014_to-92.pdf Size:190K _lge

S9014
S9014
S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V, IB=0 0.1 ?A Emitter cut

1.12. s9014.pdf Size:824K _wietron

S9014
S9014
S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 45 Vdc Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) V(BR)CBO 50 - Vdc Vdc V(BR)EBO 5.0 - Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) - ICBO uAdc 0.1 Collector Cutoff Current (V = 50 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S9014 WEITRON WEITR ON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristi

1.13. s9014lt1.pdf Size:191K _wietron

S9014
S9014
S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 1000 150 - (IC=1.0 mAdc, V CE=5.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.3 (I C=100 mAdc, I B=5.0mAdc) CLASSIFICATION OF h FE Rank Q R S T Range 150-300 200-400 300-600 400-1000 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDT

Otros transistores... PXT3906 , PXT8050 , PXT8550 , S8050 , S8550 , S9012 , S9013 , S9013W , S8550 , S9014W , S9015 , S9015W , S9018 , S9018W , SS8550B , STD123S , SC116 .

 

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