Todos los transistores

Introduzca al menos 3 números o letras

 

2N5551C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5551C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625

Tensión colector-base (Ucb): 180

Tensión colector-emisor (Uce): 160

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300

Capacitancia de salida (Cc), pF: 6

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2N5551C

 

2N5551C PDF:

1.1. 2n5551c.pdf Size:32K _kec

2N5551C
2N5551C

SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC

4.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5551C
2N5551C

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEB

4.2. 2n5550_2n5551_3.pdf Size:49K _philips

2N5551C
2N5551C

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 em

4.3. 2n5550_2n5551_2.pdf Size:53K _philips

2N5551C
2N5551C

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emi

4.4. 2n5551.pdf Size:216K _fairchild_semi

2N5551C
2N5551C

April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S

4.5. 2n5551_mmbt5551.pdf Size:171K _fairchild_semi

2N5551C
2N5551C

June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S

4.6. 2n5551.pdf Size:53K _samsung

2N5551C
2N5551C

2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction

4.7. 2n5550_2n5551.pdf Size:64K _central

2N5551C
2N5551C

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.8. 2n5551_to-92.pdf Size:208K _mcc

2N5551C
2N5551C

MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistor

4.9. 2n5550_2n5551.pdf Size:88K _onsemi

2N5551C
2N5551C

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current -

4.10. 2n5551.pdf Size:178K _utc

2N5551C
2N5551C

UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * High collector-emitter voltage: VCEO=160V * High current gain ? APPLICATIONS * Telephone switching circuit * Amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT

4.11. 2n5551.pdf Size:217K _auk

2N5551C
2N5551C

2N5551 NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier C • High voltage application Features B • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : E VCE(sat)=0.5V(MAX.) TO-92 • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO

4.12. 2n5551.pdf Size:203K _secos

2N5551C
2N5551C

2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collecto

4.13. 2n5551.pdf Size:279K _cdil

2N5551C
2N5551C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -B

4.14. 2n5551.pdf Size:32K _kec

2N5551C
2N5551C

SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=

4.15. 2n5551s.pdf Size:33K _kec

2N5551C
2N5551C

SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=50nA(Max.) VCB=120V J 0.13+0.10/-

4.16. 2n5551.pdf Size:220K _lge

2N5551C
2N5551C

2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VC

4.17. 2n5551.pdf Size:386K _wietron

2N5551C
2N5551C

2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C

4.18. h2n5551.pdf Size:52K _hsmc

2N5551C
2N5551C

Spec. No. : HE6219 HI-SINCERITY Issued Date : 1992.09.21 Revised Date : 2004.12.28 MICROELECTRONICS CORP. Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings • Maximum Tempera

4.19. 2n5551.pdf Size:260K _can-sheng

2N5551C
2N5551C

TO-92 Plastic-Encapsulate Transistors TO-92 TO-92 TO-92 TO-92 TRANSISTOR (NPN) 2N5551 TRANSISTOR (NPN) TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES FEATURES FEATURES FEATURES � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage � Switching and amplification in high voltage 1. EMlTTER �

4.20. 2n5551.pdf Size:136K _first_silicon

2N5551C
2N5551C

SEMICONDUCTOR 2N5551 TECHNICAL DATA 2N5551 TRANSISTOR (NPN) B C FEATURES General Purpose Switching Application DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) D 0.55 MAX E 1.00 F 1.27 Symbol Parameter Value Unit G 0.85 H 0.45 VCBO Collector-Base Voltage 180 V _ H J 14.00 0.50 + L 2.30 F F VCEO Collector-E

4.21. 2n5551.pdf Size:1058K _shenzhen-tuofeng-semi

2N5551C
2N5551C

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR( NPN ) TO-92 FEATURES ·Switching and amplification in high voltage Applications such as telephony 1. EMITTER · Low current(max. 600mA) 2. BASE · High voltage(max.180v) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parame

Otros transistores... 2N3906E , 2N3906S , 2N3906U , 2N3906V , 2N5400S , 2N5401C , 2N5401S , 2N5550S , 2N5088 , 2N5551S , BC807A , BC817A , KN2222A , KTA1040D , KTA1040L , KTA1042D , KTA1042L .

 


2N5551C
  2N5551C
  2N5551C
  2N5551C
 
2N5551C
  2N5551C
  2N5551C
  2N5551C
 

social 

Liste