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KT817B .. KT9144A9
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KTC2983L .. KTX215U
KTX216U .. MD1128
MD1129 .. MJ13332
MJ13333 .. MJE13003-P
MJE13003B .. MJF16206
MJF16210 .. MMBR941BLT3
MMBR941LT1 .. MMBTA43LT1
MMBTA44 .. MP1547
MP1547A .. MP601
MP601A .. MPS3710
MPS3711 .. MPSW3725
MPSW42 .. MT0492
MT0493 .. NA21YX
NA21YY .. NB021FJ
NB021FK .. NB213XY
NB213Y .. NKT224
NKT225 .. NR421FE
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NTE2427 .. P213A
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PMD13K60 .. PT902
PT902-1 .. RCA6341
RCA8203 .. RN1905
RN1905AFS .. RN2911
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S2818A .. SE6023
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SM2177 .. SRC1205E
SRC1205EF .. STD1802
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TBC558 .. TIP31C
TIP31CE3 .. TIX3034
TIX3035 .. TN5129
TN5130 .. TR01042
TR01062-1 .. UN1216S
UN1217Q .. UP1753
UP1851 .. ZTX1053A
ZTX1055A .. ZTX531
ZTX531K .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N5551C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5551C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625

Tensión colector-base (Ucb): 180

Tensión colector-emisor (Uce): 160

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300

Capacitancia de salida (Cc), pF: 6

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO92

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2N5551C PDF doc:

1.1. 2n5551c.pdf Size:32K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. COLLECTOR 3. BASE CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTER

4.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5551C
2N5551C
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown V

4.2. 2n5550_2n5551_2.pdf Size:53K _philips

2N5551C
2N5551C
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 2N5551 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collect

4.3. 2n5550_2n5551_3.pdf Size:49K _philips

2N5551C
2N5551C
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5550 - 160 V 2N5551 - 180 V VCEO collector-emitter voltage open base 2N5550 - 140 V 2N5551 - 160 V VEBO emitter-base voltag

4.4. 2n5551_mmbt5551.pdf Size:171K _fairchild_semi

2N5551C
2N5551C
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

4.5. 2n5551.pdf Size:216K _fairchild_semi

2N5551C
2N5551C
April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

4.6. 2n5551.pdf Size:53K _samsung

2N5551C
2N5551C
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 180 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 6 Collector Cut-off Current ICBO VCB=120V, IE=0 nA 50 Emitter Cut-off Current nA IEBO VEB= 4V, IC=0 50 DC Current Gain hFE IC=1mA, VCE=5V 80 IC=10mA, VCE=5V 80 250 IC=50mA, VCE=5V 30 IC=10mA, IB=1mA Collector-Emitter Sat

4.7. 2n5550_2n5551.pdf Size:64K _central

2N5551C
2N5551C
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.8. 2n5551_to-92.pdf Size:208K _mcc

2N5551C
2N5551C
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistor Marking:Type number Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) TO-92 AE Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V B V Emitter-Base Voltage 6.0 V EBO IC Collector Current 600 mA P Collector Power Dissipation 625 mW C O TJ Operating Junction Temperature -55 to +150 C O T Storage Temperature -55 to +150 C STG O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units C OFF CHARACTERISTICS V(BR)CEO Collector-Emitt

4.9. 2n5550_2n5551.pdf Size:88K _onsemi

2N5551C
2N5551C
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - Continuous IC 600 mAdc STYLE 1 Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C 1 1 2 2 Total Device Dissipation @ TC = 25C PD 1.5 W 3 3 Derate above 25C 12 mW/C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 C AMMO PACK Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings a

4.10. 2n5551.pdf Size:178K _utc

2N5551C
2N5551C
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? FEATURES * High collector-emitter voltage: VCEO=160V * High current gain ? APPLICATIONS * Telephone switching circuit * Amplifier ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT-89 B C E Tape Reel 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 E B C Tape Box 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 E B C Bulk 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B TO-92 E C B Tape Box 2N5551L-x-T92-A-K 2N5551G-x-T92-A-K TO-92 E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING SOT-89 TO-92 www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R201-002.D 2N5551 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATINGS (TA=25?C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VC

4.11. 2n5551.pdf Size:217K _auk

2N5551C
2N5551C
2N5551 NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier C • High voltage application Features B • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : E VCE(sat)=0.5V(MAX.) TO-92 • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C KSD-T0A034-000 1 E B C 2N5551 Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100?A, IE=0 180 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 160 - - V Emitter-Base br

4.12. 2n5551.pdf Size:203K _secos

2N5551C
2N5551C
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Para meter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Test conditions MIN TYP MAX UNIT Symbol Collector-base breakdown voltage V(BR)CBO 180 V Ic= 100 ?A,IE=0 Collector-emitter breakdown V(BR)CEO* Ic= 1mA, IB=0 160 V voltage Emitter-base

4.13. 2n5551.pdf Size:279K _cdil

2N5551C
2N5551C
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -Base Voltage VCBO 180 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW Derate Above 25 deg C 5.0 mw/deg C Power Dissipation @Tc=25 degC PD 1.5 W Derate Above 25 deg C 12 mw/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 deg C/W Junction to Ambient Rth(j-a) (1) 357 deg C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTI

4.14. 2n5551s.pdf Size:33K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=50nA(Max.) VCB=120V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=8dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V SOT-23 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Marking Lot No. Tstg -55 150 Storage Temperature Range Note : * Package Mounted On 99.5% Alumina

4.15. 2n5551.pdf Size:32K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

4.16. 2n5551.pdf Size:220K _lge

2N5551C
2N5551C
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 180 V Collector-emitter breakdown V(BR)CEO* IC= 1mA, IB=0 160 V voltage Emitter-base breakdown voltage V(BR)EBO IE= 10?A, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut

4.17. 2n5551.pdf Size:386K _wietron

2N5551C
2N5551C
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 160 - Vdc - Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 180 Vdc - Vdc V(BR)EBO 6.0 Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) ICBO - 0.05 uAdc Collector Cutoff Current (V =120 Vdc, IE=0) CB - IEBO Emitter Cutoff Current (VEB= 4.0 V c, I =0) 0.05 uAdc d C WEITRON http://www.weitron.com.tw 2N5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Max Characteristics Symbol Min TYP

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2N5551C
2N5551C
Spec. No. : HE6219 HI-SINCERITY Issued Date : 1992.09.21 Revised Date : 2004.12.28 MICROELECTRONICS CORP. Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............

Otros transistores... 2N3906E , 2N3906S , 2N3906U , 2N3906V , 2N5400S , 2N5401C , 2N5401S , 2N5550S , 2N5088 , 2N5551S , BC807A , BC817A , KN2222A , KTA1040D , KTA1040L , KTA1042D , KTA1042L .

 

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