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MG50G2CL3 .. MJ7201
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MM4258 .. MMBT5089
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Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2N5551C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5551C

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625

Tensión colector-base (Ucb): 180

Tensión colector-emisor (Uce): 160

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 0.6

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 300

Capacitancia de salida (Cc), pF: 6

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: TO92

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2N5551C PDF doc:

1.1. 2n5551c.pdf Size:32K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. COLLECTOR 3. BASE CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTER

4.1. 2n5550_2n5551.pdf Size:188K _motorola

2N5551C
2N5551C
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5550/D Amplifier Transistors 2N5550 NPN Silicon * 2N5551 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit CASE 2904, STYLE 1 TO92 (TO226AA) CollectorEmitter Voltage VCEO 140 160 Vdc CollectorBase Voltage VCBO 160 180 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C Total Device Dissipation @ TC = 25C PD 1.5 Watts Derate above 25C 12 mW/C Operating and Storage Junction TJ, Tstg 55 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown V

4.2. 2n5550_2n5551_3.pdf Size:49K _philips

2N5551C
2N5551C
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N5550 - 160 V 2N5551 - 180 V VCEO collector-emitter voltage open base 2N5550 - 140 V 2N5551 - 160 V VEBO emitter-base voltag

4.3. 2n5550_2n5551_2.pdf Size:53K _philips

2N5551C
2N5551C
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification 2004 Oct 28 Supersedes data of 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 160 V). 1 collector 2 base APPLICATIONS 3 emitter Switching and amplification in high voltage applications such as telephony. 1 handbook, halfpage 1 2 DESCRIPTION 3 2 NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complements: 2N5400 and 2N5401. 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2N5550 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 2N5551 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collect

4.4. 2n5551.pdf Size:216K _fairchild_semi

2N5551C
2N5551C
April 2006 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

4.5. 2n5551_mmbt5551.pdf Size:171K _fairchild_semi

2N5551C
2N5551C
June 2009 2N5551 / MMBT5551 NPN General Purpose Amplifier Features This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Suffix -C means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) Suffix -Y means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) 2N5551 MMBT5551 3 2 TO-92 SOT-23 1 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V VEBO Emitter-Base Voltage 6.0 V IC Collector current - Continuous 600 mA TJ, Tstg Junction and Storage Temperature -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on

4.6. 2n5551.pdf Size:53K _samsung

2N5551C
2N5551C
2N5551 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Collector-Emitter Voltage: VCEO= 160V TO-92 Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 625 mW Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit 180 Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 160 V V Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 6 Collector Cut-off Current ICBO VCB=120V, IE=0 nA 50 Emitter Cut-off Current nA IEBO VEB= 4V, IC=0 50 DC Current Gain hFE IC=1mA, VCE=5V 80 IC=10mA, VCE=5V 80 250 IC=50mA, VCE=5V 30 IC=10mA, IB=1mA Collector-Emitter Sat

4.7. 2n5550_2n5551.pdf Size:64K _central

2N5551C
2N5551C
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.8. 2n5551_to-92.pdf Size:208K _mcc

2N5551C
2N5551C
MCC Micro Commercial Components TM 2N5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features This device is designed for general purpose high voltage amplifiers NPN General and gas discharge display drivers. Purpose Amplifier Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistor Marking:Type number Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) TO-92 AE Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 160 V VCBO Collector-Base Voltage 180 V B V Emitter-Base Voltage 6.0 V EBO IC Collector Current 600 mA P Collector Power Dissipation 625 mW C O TJ Operating Junction Temperature -55 to +150 C O T Storage Temperature -55 to +150 C STG O Electrical Characteristics @ 25 C Unless Otherwise Specified Symbol Parameter Min Max Units C OFF CHARACTERISTICS V(BR)CEO Collector-Emitt

4.9. 2n5550_2n5551.pdf Size:88K _onsemi

2N5551C
2N5551C
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features These are Pb-Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO Vdc 2N5550 140 1 2N5551 160 EMITTER Collector - Base Voltage VCBO Vdc 2N5550 160 2N5551 180 Emitter - Base Voltage VEBO 6.0 Vdc TO-92 CASE 29 Collector Current - Continuous IC 600 mAdc STYLE 1 Total Device Dissipation @ TA = 25C PD 625 mW Derate above 25C 5.0 mW/C 1 1 2 2 Total Device Dissipation @ TC = 25C PD 1.5 W 3 3 Derate above 25C 12 mW/C STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Operating and Storage Junction TJ, Tstg -55 to +150 C AMMO PACK Temperature Range THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W 2N Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings a

4.10. 2n5551.pdf Size:20K _utc

2N5551C
2N5551C
UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified ) PARAMETERS SYMBOL RATING UNIT Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector dissipation Pc 625 mW Collector current Ic 600 mA Junction Temperature Tj 150 C Storage Temperature TSTG -55 ~ +150 C ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-base breakdown voltage BVCBO Ic=100A,IE=0 180 V Collector-emitter breakdown voltage BVCEO Ic=1mA,IB=0 160 V Emitter-base breakdown voltage BVEBO IE=10A,Ic=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VBE=4V,Ic=0 50 nA DC current gain(no

4.11. 2n5551.pdf Size:217K _auk

2N5551C
2N5551C
2N5551 NPN Silicon Transistor Descriptions PIN Connection • General purpose amplifier C • High voltage application Features B • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : E VCE(sat)=0.5V(MAX.) TO-92 • Complementary pair with 2N5401 Ordering Information Type NO. Marking Package Code 2N5551 2N5551 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 180 V Collector-Emitter voltage VCEO 160 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C KSD-T0A034-000 1 E B C 2N5551 Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=100?A, IE=0 180 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 160 - - V Emitter-Base br

4.12. 2n5551.pdf Size:203K _secos

2N5551C
2N5551C
2N5551 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.55±0.2 3.5±0.2 FEATURES * Switching and amplification in high voltage * Low current(max. 600mA) * High voltage(max.180v) 0.43+0.08 –0.07 46+0.1 0. –0.1 (1.27 Typ.) 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Para meter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Dissipation 0.625 W TJ, Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Test conditions MIN TYP MAX UNIT Symbol Collector-base breakdown voltage V(BR)CBO 180 V Ic= 100 ?A,IE=0 Collector-emitter breakdown V(BR)CEO* Ic= 1mA, IB=0 160 V voltage Emitter-base

4.13. 2n5551.pdf Size:279K _cdil

2N5551C
2N5551C
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5551 TO- 92 CBE C B E High Voltage NPN Transistor For General Purpose And Telephony Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 160 V Collector -Base Voltage VCBO 180 V Emitter -Base Voltage VEBO 6.0 V Collector Current Continuous IC 600 mA Power Dissipation @Ta=25 degC PD 625 mW Derate Above 25 deg C 5.0 mw/deg C Power Dissipation @Tc=25 degC PD 1.5 W Derate Above 25 deg C 12 mw/deg C Operating And Storage Junction Tj, Tstg -55 to +150 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 125 deg C/W Junction to Ambient Rth(j-a) (1) 357 deg C/W (1) Rth (j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTI

4.14. 2n5551.pdf Size:32K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C FEATURES High Collector Breakdwon Voltage N DIM MILLIMETERS : VCBO=180V, VCEO=160V A 4.70 MAX E K Low Leakage Current. B 4.80 MAX G C 3.70 MAX D : ICBO=50nA(Max.), VCB=120V D 0.45 E 1.00 Low Saturation Voltage F 1.27 G 0.85 : VCE(sat)=0.2V(Max.), IC=50mA, IB=5mA H 0.45 _ Low Noise : NF=8dB (Max.) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 M 0.45 MAX N 1.00 1 2 3 MAXIMUM RATING (Ta=25 ) 1. EMITTER 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V TO-92 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range 1997. 5. 2 Revision No : 0 1/2 A J C L M 2N5551 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

4.15. 2n5551s.pdf Size:33K _kec

2N5551C
2N5551C
SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS FEATURES _ + 2.93 0.20 A B 1.30+0.20/-0.15 High Collector Breakdwon Voltage C 1.30 MAX 2 : VCBO=180V, VCEO=160V 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Leakage Current. 1 G 1.90 H 0.95 : ICBO=50nA(Max.) VCB=120V J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Low Saturation Voltage L 0.55 P P : VCE(sat)=0.2V(Max.) IC=50mA, IB=5mA M 0.20 MIN N 1.00+0.20/-0.10 Low Noise : NF=8dB (Max.) P 7 M 1. EMITTER MAXIMUM RATING (Ta=25 ) 2. BASE 3. COLLECTOR CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V SOT-23 VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA IB Base Current 100 mA PC * Collector Power Dissipation 350 mW Tj Junction Temperature 150 Marking Lot No. Tstg -55 150 Storage Temperature Range Note : * Package Mounted On 99.5% Alumina

4.16. 2n5551.pdf Size:220K _lge

2N5551C
2N5551C
2N5551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0.625 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A,IE=0 180 V Collector-emitter breakdown V(BR)CEO* IC= 1mA, IB=0 160 V voltage Emitter-base breakdown voltage V(BR)EBO IE= 10?A, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut

4.17. 2n5551.pdf Size:386K _wietron

2N5551C
2N5551C
2N5551 NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2N5551 Unit Collector-Emitter Voltage V CEO 160 Vdc Collector-Base Voltage VCBO 180 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current IC 600 mAdc PD Total Device Dissipation T =25 C W A 0.625 Junction Temperature T 150 j C Storage, Temperature Tstg C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO 160 - Vdc - Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) V(BR)CBO 180 Vdc - Vdc V(BR)EBO 6.0 Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) ICBO - 0.05 uAdc Collector Cutoff Current (V =120 Vdc, IE=0) CB - IEBO Emitter Cutoff Current (VEB= 4.0 V c, I =0) 0.05 uAdc d C WEITRON http://www.weitron.com.tw 2N5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Max Characteristics Symbol Min TYP

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2N5551C
2N5551C
Spec. No. : HE6219 HI-SINCERITY Issued Date : 1992.09.21 Revised Date : 2004.12.28 MICROELECTRONICS CORP. Page No. : 1/5 H2N5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N5551 is designed for amplifier transistor. Features TO-92 • Complements to PNP Type H2N5401 • High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA)) Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............

Otros transistores... 2N3906E , 2N3906S , 2N3906U , 2N3906V , 2N5400S , 2N5401C , 2N5401S , 2N5550S , 2N5088 , 2N5551S , BC807A , BC817A , KN2222A , KTA1040D , KTA1040L , KTA1042D , KTA1042L .

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