2N60 . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data 1 � Motorola, Inc. 1996 MTP2N60E ELECTRICAL CHARACTERISTICS (TJ = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain�to�Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 �Adc) 600 � � Vdc Temperature Coefficient (positive) � 480 � mV/�C Zero Gate Voltage Drain Current IDSS mA � � 0.25 (VDS = 600 Vdc, VGS = 0 Vdc)� � � 1.0 (VDS = 480 Vdc, VGS = 0 Vdc, TJ =

1.2. mtp2n60e.pdf Size:190K _motorola

1.3. 2n6027_2n6028.pdf Size:120K _motorola

1 � � *Gate to Anode Leakage Current � IGAO nAdc (VS = 40 Vdc, TA = 25�C, Cathode Open) � 1 10 (VS = 40 Vdc, TA = 75�C, Cathode Open) � 3 � Gate to Cathode Leakage Current � IGKS � 5 50 nAdc (VS = 40 Vdc, Anode to Cathode Shorted) *Forward Voltage (IF = 50 mA Peak) 1,6 VF � 0.8 1.5 Volts *Peak Output Voltage 3,7 Vo 6 11 � Volt (VG = 20 Vdc, CC = 0.2 �F) Pulse Voltage Rise Time 3 tr � 40 80 ns (VB = 20 Vdc, CC = 0.2 �F) *Indicates JEDEC Registered Data. FIGURE 1 � ELECTRICAL CHARACTER

1.4. 2n6049.pdf Size:251K _motorola

1.5. 2n6035_2n6036_2n6038_2n6039.pdf Size:243K _motorola

I III IIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIII IIIII III Operating and Storage Junction TJ, Tstg IIIIIII _C �65 to +150 Temperature Range IIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIIII IIIIIIIIIII IIIII III III CASE 77�08 THERMAL CHARACTERISTICS IIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIIII IIIIIIIIIII IIIII III IIIII III III TO�225AA TYPE Characteristic Symbol M

1.6. 2n6071_2n6073_2n6075_.pdf Size:157K _motorola

al 2 and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200�C, for 10 seconds. Consult factory for lead bending options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction to Case R?JC 3.5 �C/W Thermal Resistance, Junction to Ambient R?JA 75 �C/W *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (TC = 25�C unless otherwise noted.) Characteristic

1.7. 2n6071_2n6073_2n6075.pdf Size:118K _motorola

oses (either terminal connection or device mounting), soldering temperatures shall not exceed +200�C, for 10 seconds. Consult factory for lead bending options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction to Case R?JC 3.5 �C/W Thermal Resistance, Junction to Ambient R?JA 75 �C/W *Indicates JEDEC Registered Data. ELECTRICAL CHARACTERISTICS (TC = 25�C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit *Peak Blocking Current IDRM (VD =

1.8. 2n6050_2n6051_2n6052_2n6057_2n6058_2n6059.pdf Size:275K _motorola

THERMAL CHARACTERISTICS III IIIIII IIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIII IIIII III III TO�204AA (TO�3) Characteristic IIIII Rating Unit IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII Symbol IIIIII IIIII III III Thermal Resistance, Junction to Case IIIII 1.17 III _C/W IIIIIIIIIIII IIIIII IIIIIIIIIIII R?JC IIIIII IIIII III (1) Indicates JEDEC Registered Data. IIIIIIIIIIII IIIIII IIIII III 160 140 120 100 80 60

1.9. 2n5630_2n6030_2n5631_2n6031.pdf Size:253K _motorola

I III III THERMAL CHARACTERISTICS (1) IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III Characteristic Symbol Max Unit IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIII III IIIII III Thermal Resistance, Junction to Case ?JC 0.875 _C/W IIIIIIIIIIII IIIIII IIIII III (1) Indicates JEDEC Registered Data. 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 200 TC, TEMPERATURE (�C) Figure 1. Power Derating Safe Area Curves are indicated by Figure 5

1.10. 2n6040_2n6041_2n6042_2n6043_2n6044_2n6045.pdf Size:241K _motorola

III III III III Derate above 25_C 0.0175 W/_C IIIIIIIIIII IIIIIIIII IIIIIIIIIII IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III III III III Operating and Storage Junction, TJ, Tstg �65 to +150 _C Temperature Range IIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIII III IIIIII IIIII III III THERMAL CHARACTERISTICS IIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIII III IIIIII IIIII III IIIII

1.11. mtb2n60e.pdf Size:271K _motorola

aracteristics � are given to facilitate �worst case� design. E�FET and Designer�s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola TMOS Power MOSFET Transistor Device Data 1 � Motorola, Inc. 1996 MTB2N60E ELECTRICAL CHARACTERISTICS (TJ = 25�C unless otherwise noted) Characteristic Symbol Min Typ Max Unit

1.12. 2n6055_2n6056.pdf Size:209K _motorola

200 III Temperature Range IIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIII IIIII III IIIII III THERMAL CHARACTERISTICS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIII IIIIIIIIIII IIIIIII IIIII III IIIII III 2N6055 IIIIIIIIIII IIIIIII IIIIIIIIIII IIIIIII IIIII III IIIII III 2N6056 Characteristic Symbol Unit IIIIIIIIIII IIIIIII IIIIIIIIIII R?JC IIIIIII IIIII _C/W IIIII 1.75 III Thermal Resistance, Junction to Case III (1) Indicates JEDEC Registered Data IIIIII

1.13. php2n60e_3.pdf Size:76K _philips2

60 - K/W to ambient SOT404 and SOT428 packages, pcb - 50 - K/W mounted, minimum footprint 2 pulse width and repetition rate limited by Tj max. December 1998 2 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistors PHP2N60E, PHB2N60E, PHD2N60E Avalanche energy rated ELECTRICAL CHARACTERISTICS Tj = 25 ?C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V voltage ?V(BR)DSS

1.14. php2n60_1.pdf Size:50K _philips2

R)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V voltage ?V(BR)DSS / Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.7 - V/K ?Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS = 10 V; ID = 1.3 A - 4.0 4.4 ? VGS(TO) Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V gfs Forward transconductance VDS = 30 V; ID = 1.3 A 0.7 1.7 - S IDSS Drain-source leakage current VDS = 600 V; VGS = 0 V - 1 100 �A VDS = 480 V; VGS = 0 V; Tj = 125 ?C - 60 50

1.15. phx2n60e_3.pdf Size:64K _philips2

tion with heatsink compound - - 5 K/W to heatsink Rth j-a Thermal resistance junction - 55 - K/W to ambient ELECTRICAL CHARACTERISTICS Tj = 25 ?C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V voltage ?V(BR)DSS / Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K ?Tj voltage temperature coefficient RDS(ON) Drain-source on resistance VGS = 10 V; ID = 1 A - 4.6 6 ? VGS(TO) Gate thresh

1.16. stp2n60.pdf Size:388K _st

nce ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 2.9 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (?) Forward VDS > ID(on) x RDS(on)max ID = 1.5 A 1 2.4 S Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 450 600 pF Coss Output Capacitance 62 85 pF Crss Reverse Transfer 23 35 pF Capacitance 2/10 STP2N60/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on)

1.17. sdt2n60.pdf Size:172K _st

nit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 �A 2.25 3 3.75 V R Static Drain-source On V = 10V I = 1.5 A 3.3 4 ? DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 2.3 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (?) Forward V > I x R I = 1.5 A 1 2 S fs DS D(on) DS(on)max D Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 380 500 pF C Output Capacitance 57 75 pF oss C Reverse Transfer 17 23 pF

1.18. 2n6059.pdf Size:42K _st

tronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized

1.19. 2n6036_2n6039.pdf Size:243K _st

ype) 3/6 2N6036/2N6039 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 4/6 2N6036/2N6039 SOT-32 (TO-126) MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 C 2.4 2.7 0.040 0.106 c1 1.0 1.3 0.039 0.050 D 15.4 16.0 0.606 0.629 e 2.2 0.087 e3 4.15 4.65 0.163 0.183 F 3.8 0

1.20. 2n6034_2n6035_2n6036_2n6037_2n6038_2n6039.pdf Size:174K _st

1.21. stk2n60-.pdf Size:178K _st

� 100 nA Current (VDS = 0) ON (?) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 �A 2.25 3 3.75 V R Static Drain-source On V = 10V I = 1 A 7.2 8 ? DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) x RDS(on)max 1.4 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (?) Forward V > I x R I = 1 A 0.65 1.2 S fs DS D(on) DS(on)max D Transconductance Ciss Input Capacitance VDS = 25 V f = 1

1.22. stk2n60.pdf Size:184K _st

orward V > I x R I = 1 A 1.2 1.9 S fs DS D(on) DS(on)max D Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 460 600 pF C Output Capacitance 55 70 pF oss C Reverse Transfer 22 30 pF rss Capacitance 2/10 STK2N80 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Time VDD = 400 V ID = 1.5 A 38 50 ns tr Rise Time RG = 50 ? VGS = 10 V 42 57 ns (see test circuit, figure 3) (di/dt) Turn-on Current

1.23. fqp2n60c_fqpf2n60c.pdf Size:1366K _fairchild_semi

nt, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR VGS = -30 V, VDS = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA On Characteristics VGS(th) VDS = VGS, ID = 250 ?A Gate Threshold Voltage 2.0 -- 4.0 V rDS(on) Static Drain-Source VGS = 10 V, ID = 1 A -- 3.6 4.7 ? On-Resistance gFS VDS = 40 V, ID = 1 A (Note 4) -- 5.0 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 180 235 pF VDS = 25 V, VGS = 0 V, Coss Output Capacitance -- 20 25 p

1.24. fcp22n60n_fcpf22n60nt.pdf Size:757K _fairchild_semi

50 - - ?BVDSS Breakdown Voltage Temperature ID = 1mA, Referenced to 25oC - 0.68 - V/oC ?TJ Coefficient VDS = 480V, VGS = 0V - - 10 IDSS Zero Gate Voltage Drain Current �A VDS = 480V, TJ = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = �50V, VDS = 0V - - �100 nA On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250�A 2.0 3 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 ? gFS Forward Transconductance VDS = 20V, ID = 11A - 2

1.25. fca22n60n.pdf Size:527K _fairchild_semi

S = 480V, TJ = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = �50V, VDS = 0V - - �100 nA On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250�A 2.0 3 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 ? gFS Forward Transconductance VDS = 20V, ID = 11A - 22 - S Dynamic Characteristics Ciss Input Capacitance - 1950 - pF VDS = 100V, VGS = 0V Coss Output Capacitance - 75.9 - pF f = 1MHz Crss Reverse Transfer Capacitance - 3 - pF

1.26. fqpf12n60c.pdf Size:873K _fairchild_semi

0 V, TC = 125�C -- -- 10 �A IGSSF VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Forward -- -- 100 nA IGSSR VGS = -30 V, VDS = 0 V Gate-Body Leakage Current, Reverse -- -- -100 nA On Characteristics VGS(th) VDS = VGS, ID = 250 �A Gate Threshold Voltage 2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10 V, ID = 6 A -- 0.53 0.65 ? On-Resistance gFS VDS = 40 V, ID = 6 A (Note 4) -- 13 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 1760 2290 pF

1.27. fqp12n60c_fqpf12n60c .pdf Size:1170K _fairchild_semi

Coefficient IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 1 �A VDS = 480V, TC = 125�C -- -- 10 �A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250�A2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10V, ID = 6A -- 0.53 0.65 ? On-Resistance (Note 4) gFS Forward Transconductance VDS = 40V, ID = 6A -- 13

1.28. 2n6076.pdf Size:29K _fairchild_semi

� QFET� TinyLogic� Bottomless� GlobalOptoisolator� QS� UHC� CoolFET� GTO� QT Optoelectronics� VCX� CROSSVOLT� HiSeC� DOME� Quiet Series� ISOPLANAR� E2CMOSTM MICROWIRE� SILENT SWITCHER? EnSignaTM OPTOLOGIC� SMART START� FACT� OPTOPLANAR� SuperSOT�-3 FACT Quiet Series� PACMAN� SuperSOT�-6 ? POP� SuperSOT�-8 FAST DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIR

1.29. fqd2n60c_fqu2n60c.pdf Size:762K _fairchild_semi

V ?BVDSS/ Breakdown Voltage Temperature ID = 250 �A, Referenced to 25�C -- 0.6 -- V/�C ?TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 �A VDS = 480 V, TC = 125�C -- -- 10 �A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 �A2.0 -- 4.0 V RDS(on) Static Drain-Source VGS = 10 V,

1.30. hgtp12n60c3d_hgt1s12n60c3d.pdf Size:151K _fairchild_semi

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 12 A Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES �20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM �30 V Switching Safe Operating Area at

1.31. hgtg12n60c3d.pdf Size:120K _fairchild_semi

ontinuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES �20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM �30 V Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Power Dissip

1.32. hgtp12n60c3_hgt1s12n60c3.pdf Size:169K _fairchild_semi

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES �20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM �30 V Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA 24A at 600V Power Dissipation Total at TC = 25oC .

1.33. fdp12n60nz_fdpf12n60nz.pdf Size:284K _fairchild_semi

erenced to 25oC - 0.6 - V/oC ?TJ Coefficient VDS = 600V, VGS = 0V - - 1 IDSS Zero Gate Voltage Drain Current ?A VDS = 480V, TC = 125oC- - 10 IGSS Gate to Body Leakage Current VGS = �30V, VDS = 0V - -? �10 ?A On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250?A3 - 5 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6A -? 0.53 0.65 ? gFS Forward Transconductance VDS = 20V, ID = 6A (Note 4) - 13.5 - S Dynamic Characteristics Ciss Input Capacitance - 1260

1.34. ssw2n60b_ssi2n60b.pdf Size:648K _fairchild_semi

1.35. fqpf12n60.pdf Size:549K _fairchild_semi

= 2.9 A (Note 4) -- 6.0 -- S Forward Transconductance Dynamic Characteristics Ciss Input Capacitance -- 1480 1900 pF VDS = 25 V, VGS = 0 V, Coss Output Capacitance -- 200 270 pF f = 1.0 MHz Crss Reverse Transfer Capacitance -- 25 35 pF Switching Characteristics td(on) Turn-On Delay Time -- 30 70 ns VDD = 300 V, ID = 12 A, tr Turn-On Rise Time -- 115 240 ns RG = 25 ? td(off) Turn-Off Delay Time -- 95 200 ns (Note 4, 5) tf Turn-Off Fall Time -- 85 180 ns Qg Total Gate C

1.36. fch22n60n.pdf Size:379K _fairchild_semi

VDS = 480V, TJ = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = �50V, VDS = 0V - - �100 nA On Characteristics VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250?A 2.0 3 4.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 ? gFS Forward Transconductance VDS = 20V, ID = 11A - 22 - S Dynamic Characteristics Ciss Input Capacitance - 1950 - pF VDS = 100V, VGS = 0V Coss Output Capacitance - 75.9 - pF f = 1MHz Crss Reverse Transfer Capacitance - 3 -

1.37. hgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 23 A Collecto

1.38. hgtg12n60a4_hgtp12n60a4_hgt1s12n60a4.pdf Size:207K _fairchild_semi

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 96 A Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES �20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM �3

1.39. irfp22n60k.pdf Size:123K _international_rectifier

= 6.2 ? tf Fall Time �� 37 �� VGS = 10V � Ciss Input Capacitance �� 3570 �� VGS = 0V Coss Output Capacitance �� 350 �� VDS = 25V Crss Reverse Transfer Capacitance �� 36 �� pF ? = 1.0MHz Coss Output Capacitance �� 4710 �� VGS = 0V, VDS = 1.0V, ? = 1.0MHz Coss Output Capacitance �� 92 �� VGS = 0V, VDS = 480V, ? = 1.0MHz Coss eff. Effective Output Capacitance �� 180 �� VGS = 0V, VDS = 0V to 480V � Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D IS

1.40. ssp2n60a.pdf Size:939K _samsung

ic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 2 Integral reverse pn-diode A ISM Pulsed-Source Current 1 -- -- 6 in the MOSFET O o VSD Diode Forward Voltage 4 -- -- 1.4 TJ=25 C,IS=2A,VGS=0V V O o trr Reverse Recovery Time C -- 280 -- ns TJ=25 ,IF=2A 4 Qrr Reverse Recovery Charge � � -- 0.62 -- C diF/dt=100A/ s O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature o 2 O L=60mH, IAS=2A, VDD=50V, RG=27?, Starting TJ

1.41. sss2n60a.pdf Size:507K _samsung

nits Test Condition IS Continuous Source Current -- -- 1.3 Integral reverse pn-diode A ISM Pulsed-Source Current 1 -- -- 6 in the MOSFET O o VSD Diode Forward Voltage 4 -- -- 1.4 TJ=25 C,IS=1.3A,VGS=0V V O o trr Reverse Recovery Time C -- 280 -- ns TJ=2 ,IF=2A 4 Qrr Reverse Recovery Charge � � -- 0.62 -- C diF/dt=100A/ s O Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=150mH, IAS=1.3A, VDD=50V, RG=27? , Starting TJ =25oC o 3 <

1.42. sgr2n60ufd.pdf Size:323K _samsung

ge IF=2.0A - 1.4 1.7 V Tc =100 - 1.3 - Tc =25 Trr Diode Reverse - 45 80 nS Tc =100 Recovery Time - 75 - Tc =25 Irr Diode Peak Reverse IF=2.0A, VR=200V - 1.5 3.0 A Tc =100 Recovery Current -di/dt=200A/uS - 2.5 - Tc =25 Qrr Diode Reverse - 60 135 nC Tc =100 Recovery Charge - 120 - THERMAL RESISTANCE Symbol Characteristics Min Typ Max Units - - 5.0 /W R JC Junction-to-Case (IGBT) - - 5.0 /W R JC Junction-to-Case (DIODE) - - 110 /W R JA Junction-to-Ambient IGBT CO-PAK SGR2

1.43. ssw2n60a.pdf Size:509K _samsung

Qgd Gate-Drain( �Miller� ) Charge -- 6.7 -- See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 2 Integral reverse pn-diode A ISM Pulsed-Source Current 1 -- -- 6 in the MOSFET O o VSD Diode Forward Voltage 4 -- -- 1.4 TJ=25 C,IS=2A,VGS=0V V O o trr Reverse Recovery Time C -- 280 -- ns TJ=25 ,IF=2A 4 Qrr Reverse Recovery Charge � � -- 0.62 -- C diF/dt=100A/ s O Notes ;

1.44. ssr2n60a.pdf Size:505K _samsung

5 O O Qgd Gate-Drain( �Miller� ) Charge -- 6.7 -- See Fig 6 & Fig 12 Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- 1.8 Integral reverse pn-diode A ISM Pulsed-Source Current 1 -- -- 6 in the MOSFET O o VSD Diode Forward Voltage 4 -- -- 1.4 TJ=25 C,IS=1.8A,VGS=0V V O o trr Reverse Recovery Time C -- 280 -- ns TJ=25 ,IF=2A 4 Qrr Reverse Recovery Charge � � -- 0.62 -- C diF/dt=100A/ s

1.45. spd02n60.pdf Size:82K _siemens

0 V, ID = 1.5 A, RG = 50 ? Fall time tf - 25 35 VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 ? Semiconductor Group 3 10 / 1998 SPD02N60 SPU02N60 Preliminary data Electrical Characteristics Parameter Symbol Values Unit min. typ. max. at Tj = 25 �C, unless otherwise specified Reverse Diode Inverse diode continuous forward current - - 2 A IS TC = 25 �C Inverse diode direct current,pulsed ISM - - 8 TC = 25 �C Inverse diode forward voltage - 0.85 1.4 V VSD VGS = 0 V, IF = 4 A

1.46. sihb22n60s.pdf Size:146K _vishay

1.47. sihg22n60s.pdf Size:177K _vishay

1.48. sihf22n60s.pdf Size:163K _vishay

1.49. 2n5172_2n6076_mps5172_mps6076.pdf Size:70K _central

1.50. 2n5629_2n5630_2n6029_2n6030.pdf Size:67K _central

1.51. skp02n60_rev2_2g[1].pdf Size:349K _infineon

5�C - - 250 Tj=150�C Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gf s VCE=20V, IC=2A - 1.6 - S Dynamic Characteristic Input capacitance Ci ss VCE=25V, - 142 170 pF Output capacitance Coss VGE=0V, - 18 22 f=1MHz Reverse transfer capacitance Crss - 10 12 Gate charge QGat e VCC=480V, IC=2A - 14 18 nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) VGE=15V,tSC?10�s

1.52. spb02n60s5_rev.2.4.pdf Size:343K _infineon

D=1.8A, RG=50? Rise time tr - 35 - Turn-off delay time td(off) - 35 42 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC Gate to drain charge Qgd - 4.5 - VDD=350V, ID=1.8A, - 7.3 9.5 Gate charge total Qg VGS=0 to 10V VDD=350V, ID=1.8A - 8 - V Gate plateau voltage V(plateau) 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm? (one layer, 70 �m

1.53. spd02n60c3_spu02n60c3.pdf Size:1013K _infineon

er capacitance Crss VGS VDS Turn-on delay time td(on) VDD VGS RG ? Rise time tr Turn-off delay time td(off) Fall time tf Gate to source charge Qgs VDD Gate to drain charge Qgd VDD VGS VDD

1.54. skb02n60_rev2_2g.pdf Size:1150K _infineon

ate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gf s VCE=20V, IC=2A - 1.6 - S Dynamic Characteristic Input capacitance Ci ss VCE=25V, - 142 170 pF Output capacitance Coss VGE=0V, - 18 22 f=1MHz Reverse transfer capacitance Crss - 10 12 Gate charge QGat e VCC=480V, IC=2A - 14 18 nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) VGE=15V,tSC?10�s - 20 - A VCC ? 600V, Tj ?

1.55. spd02n60s5_spu02n60s5_rev.2.5.pdf Size:882K _infineon

f=1MHz Output capacitance Coss - 77 - Reverse transfer capacitance Crss - 4.4 - Turn-on delay time td(on) VDD=350V, VGS=0/10V, - 35 - ns ID=1.8A, RG=50? Rise time tr - 35 - Turn-off delay time td(off) - 35 42 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC Gate to drain charge Qgd - 4.5 - VDD=350V, ID=1.8A, - 7.3 9.5 Gate charge total Qg VGS=0 to 10V VDD=350V, ID=1.8A - 8 - V Gate plateau voltage V(plateau) 1Repetitve avalan

1.56. spp02n60c3_rev.2.7.pdf Size:456K _infineon

Turn-on delay time td(on) VDD VGS RG ? Rise time tr Turn-off delay time td(off) Fall time tf Gate to source charge Qgs VDD Gate to drain charge Qgd VDD VGS VDD

1.57. sgb02n60_rev2_3.pdf Size:792K _infineon

charge QGat e VCC=480V, IC=2A - 14 18 nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) VGE=15V,tSC?10�s - 20 - A VCC ? 600V, Tj ? 150�C 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70�m thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.3 Nov 06 SGB02N60 S

1.58. sps02n60c3_rev22.pdf Size:1186K _infineon

Turn-on delay time td(on) VDD VGS RG ? Rise time tr Turn-off delay time td(off) Fall time tf Gate to source charge Qgs VDD Gate to drain charge Qgd VDD VGS VDD

1.59. spp02n60s5_rev.2.6.pdf Size:935K _infineon

0/10V, - 35 - ns ID=1.8A, RG=50? Rise time tr - 35 - Turn-off delay time td(off) - 35 42 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=350V, ID=1.8A - 2.3 - nC Gate to drain charge Qgd - 4.5 - VDD=350V, ID=1.8A, - 7.3 9.5 Gate charge total Qg VGS=0 to 10V VDD=350V, ID=1.8A - 8 - V Gate plateau voltage V(plateau) 1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm?

1.60. sgp02n60_sgd02n60_rev2_3g.pdf Size:353K _infineon

VCE=20V, IC=2A - 1.6 - S Dynamic Characteristic Input capacitance Ci ss VCE=25V, - 142 170 pF Output capacitance Coss VGE=0V, - 18 22 f=1MHz Reverse transfer capacitance Crss - 10 12 Gate charge QGat e VCC=480V, IC=2A - 14 18 nC VGE=15V Internal emitter inductance LE - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current2) IC(SC) VGE=15V,tSC?10�s - 20 - A VCC ? 600V, Tj ? 150�C 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70�m t

1.61. spb02n60c3_rev.2.4.pdf Size:545K _infineon

Turn-on delay time td(on) VDD VGS RG ? Rise time tr Turn-off delay time td(off) Fall time tf Gate to source charge Qgs VDD Gate to drain charge Qgd VDD VGS VDD

1.62. ixgx72n60c3h1.pdf Size:213K _ixys

� �C � � tri 36 ns e 5.45 BSC .215 BSC Eon 1.48 mJ L 19.81 20.32 .780 .800 IC = 50A, VGE = 15V L1 3.81 4.32 .150 .170 td(off) 120 ns Q 5.59 6.20 .220 0.244 VCE = 480V, RG = 2?, Note 2 tfi 124 ns R 4.32 4.83 .170 .190 Eoff 0.93 mJ RthJC 0.23 �C/W RthCS 0.15 �C/W Reverse Diode (FRED) Symbol Test Conditions Characteristic Values (TJ = 25�C, Unless Otherwise Specified) Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V TJ = 150�C 1.4 1.8 V IRM 8.3 A IF = 60A, VGE = 0V, T

1.63. ixgr32n60cd1.pdf Size:571K _ixys

� A 4.83 5.21 .190 .205 tri 25 ns IC = IT, VGE = 15 V, L = 100 �H A1 2.29 2.54 .090 .100 Eon 1mJ A2 1.91 2.16 .075 .085 VCE = 0.8 VCES, RG = Roff = 4.7 ? b 1.14 1.40 .045 .055 td(off) 110 ns b1 1.91 2.13 .075 .084 Remarks: Switching times may b2 2.92 3.12 .115 .123 tfi 100 ns increase for VCE (Clamp) > 0.8 � VCES, C 0.61 0.80 .024 .031 higher TJ or increased RG D 20.80 21.34 .819 .840 Eoff 0.85 mJ E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC RthJC 0.90 K/W L 19.81 20.32 .780

1.64. ixgk72n60a3h1_ixgx72n60a3h1.pdf Size:229K _ixys

IC = 50A, VGE = 15V D 1.007 1.047 25.58 26.59 td(off) 510 ns E 0.760 0.799 19.30 20.29 VCE = 480V, RG = 3? e .215 BSC 5.46 BSC tfi 375 ns J 0.000 0.010 0.00 0.25 K 0.000 0.010 0.00 0.25 Eoff 6.5 mJ L 0.779 0.842 19.79 21.39 L1 0.087 0.102 2.21 2.59 RthJC 0.23 �C/W OP 0.122 0.138 3.10 3.51 Q 0.240 0.256 6.10 6.50 RthCS 0.15 �C/W Q1 0.330 0.346 8.38 8.79 OR 0.155 0.187 3.94 4.75 OR1 0.085 0.093 2.16 2.36 S 0.243 0.253 6.17 6.43 Reverse Diode (FRED) PLUS247TM (IXGX) Outline (TJ

1.65. ixfh22n60p_ixfv22n60p.pdf Size:295K _ixys

C/W E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Source-Drain Diode Characteristic Values ?P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 (TJ = 25� C, unless otherwise specified) R 4.32 5.49 .170 .216 Symbol Test Conditions Min. Typ. Max. S 6.15 BSC 242 BSC IS VGS = 0 V 22 A PLUS220 (IXFV) Outline ISM Repetitive 66 A VSD IF = IS, VGS = 0 V, 1.5 V Pulse test, t ?300 �s, duty cycle d ? 2 % trr IF = 26A 200 ns -di/dt = 100 A/�s QRM 1.0 �C

1.66. ixtq22n60p_ixtv22n60p.pdf Size:314K _ixys

XYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 IXTQ 22N60P IXTV 22N60P IXTV 22N60PS Fig. 1. Output Characteristics Fig. 2. Extended

1.67. ixgr72n60c3d1.pdf Size:214K _ixys

(FRED) Symbol Test Conditions Characteristic Values (TJ = 25�C, Unless Otherwise Specified) Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 2.5 V TJ = 150�C 1.4 V IF = 60A, VGE = 0V, IRM TJ = 100�C 8.3 A -diF/dt = 100A/?s, VR = 100V trr 35 ns IF = 1A, -di/dt = 200A/?s, VR = 30V RthJC 0.85 �C/W Notes: 1. Pulse test, t ? 300?s, duty cycle, d ? 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions,

1.68. ixgn72n60c3h1.pdf Size:223K _ixys

acteristic Values (TJ = 25�C, Unless Otherwise Specified) Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 1.6 2.0 V TJ = 150�C 1.4 1.8 V IRM IF = 60A, VGE = 0V, TJ = 100�C 8.3 A trr -diF/dt = 200A/?s, VR = 300V 140 ns RthJC 0.42 �C/W Notes: 1. Pulse test, t ? 300?s, duty cycle, d ? 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,93

1.69. ixfb82n60p.pdf Size:101K _ixys

37,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 IXFB 82N60P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25?C @ 25?C 90 180 VGS = 10V VGS = 10V 80 160 8V 8V 70 140 7V 60 120 7V 50 100 40 80 6V 30 60 6V 20 40 10 20 5V 5V 0

1.70. ixfk32n60_ixfn32n60_ixfk36n60_ixfn36n60.pdf Size:192K _ixys

-5030 Fax: +49-6206-503629 IXFK 32N60 IXFN 32N60 IXFK 36N60 IXFN 36N60 TO-264 AA Outline Symbol Test Conditions Characteristic Values (TJ = 25�C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 36 S Ciss 9000 pF Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 840 pF Crss 280 pF td(on) 30 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 45 ns td(off) RG = 1 ? (External), 100 ns Dim. Millimeter Inches Min. Max. Min. Max. tf 60 ns A 4.82 5.13 .190 .202 A

1.71. ixfn82n60p.pdf Size:152K _ixys

alues (TJ = 25� C, unless otherwise specified) Symbol Test Conditions Min. Typ. Max. IS VGS = 0 V 82 A ISM Repetitive 200 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25A, -di/dt = 100 A/�s 200 ns QRM VR = 100V 0.6 �C IRM 6.0 A Notes: 1. Pulse test, t ?300 �s, duty cycle d ? 2 % Test Current IT = 41A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683

1.72. ixfl82n60p.pdf Size:205K _ixys

trr IF = 25A, -di/dt = 100 A/�s 200 ns QRM VR = 100V 0.6 �C IRM 6.0 A Notes: 1. Pulse test, t ?300 �s, duty cycle d ? 2 % Test Current IT = 41A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796

1.73. ixgh72n60c3.pdf Size:166K _ixys

s E 15.75 16.26 .610 .640 tfi 124 ns e 5.20 5.72 0.205 0.225 VCE = 480V, RG = 2?, Note 2 L 19.81 20.32 .780 .800 Eoff 0.93 mJ L1 4.50 .177 ?P 3.55 3.65 .140 .144 RthJC 0.23 �C/W Q 5.89 6.40 0.232 0.252 RthCK 0.21 �C/W R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t ? 300?s, duty cycle, d ? 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs a

1.74. ixfc22n60p.pdf Size:231K _ixys

0.21 � C/W Source-Drain Diode Characteristic Values (TJ = 25� C unless otherwise specified) Symbol Test Conditions Min. Typ. Max. IS VGS = 0 V 12 A Ref: IXYS CO 0177 R0 ISM Repetitive 66 A VSD IF = IS, VGS = 0 V, 1.5 V trr IF = 25A, -di/dt = 100 A/�s 200 ns QRM VR = 100 V, VGS = 0 V 1.0 �C Notes: 1. Pulse test, t ?300 �s, duty cycle d ? 2 %; 2. Test current IT = 11A. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,

1.75. 2n6027_2n6028.pdf Size:148K _onsemi

L CHARACTERISTICS (TC = 25�C unless otherwise noted.) Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current 2,9,11 IP �A (VS = 10 Vdc, RG = 1 M?) 2N6027 � 1.25 2.0 2N6028 � 0.08 0.15 (VS = 10 Vdc, RG = 10 k ohms) 2N6027 � 4.0 5.0 2N6028 � 0.70 1.0 *Offset Voltage 1 VT Volts (VS = 10 Vdc, RG = 1 M?) 2N6027 0.2 0.70 1.6 2N6028 0.2 0.50 0.6 (VS = 10 Vdc, RG = 10 k ohms) (Both Types) 0.2 0.35 0.6 *Valley Current 1,4,5 IV �A (VS = 10 Vdc, RG = 1 M?) 2N6027 � 18 50 2N6028 � 18 25

1.76. ndf02n60z_ndp02n60z_ndd02n60z.pdf Size:143K _onsemi

p Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 600 V Breakdown Voltage Temperature Reference to 25�C, DBVDSS/ 0.6 V/�C Coefficient ID = 1 mA DTJ Drain-to-Source Leakage Current 25�C IDSS 1 mA VDS = 600 V, VGS = 0 V 150�C 50 Gate-to-Source Forward Leakage VGS = �20 V IGSS �10 mA ON CHARACTERISTICS (Note 5) Static Drain-to-Source VGS = 10 V, ID = 1.0 A RDS(on) 4.0 4.8 W On-Resistance Gate Threshold Voltage VDS = VGS, ID = 50 mA VGS(th) 3.0 4

1.77. 2n6055-2n6053.pdf Size:159K _comset

mes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3

1.78. 2n6050-2n6051-2n6052-2n6057-2n6058-2n6059.pdf Size:217K _comset

2.0 2N6058 2N6052 Collector-Emitter saturation 2N6059 VCE(SAT) Voltage (*) V 2N6050 2N6057 2N6051 IC=12 A, IB=120 mA - - 3.0 2N6058 2N6052 2N6059 2N6050 2N6057 Base-Emitter Saturation 2N6051 VBE(SAT) Voltage (*) IC=12 A, IB=120 mA - - 4 V 2N6058 2N6052 2N6059 2N6050 2N6057 Base-Emitter Voltage (*) 2N6051 IC=6 A, VCE=3 V VBE(ON) - - 2.8 V 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 fT Transition Frequency IC=5 A, VCE=3 V, f=1 MHz 4 - - M

1.79. hgtp12n60c3.pdf Size:188K _harris_semi

sipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 104 W Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to +150 C o Maximum Lead Temperature

1.80. hgtg12n60c3d_.pdf Size:102K _harris_semi

. . . . . . . . . . . . . . . 0.83 W/oC o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 C o Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260 C Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 �s Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 13

1.81. hgtg12n60d1d.pdf Size:46K _harris_semi

. . . . . . . . . . . . PD 75 W Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150 C o Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 C (0.125 inches from case for 5s) NOTE: 1. Repetitive Rating: Pulse width limited

1.82. hgtg12n60c3d.pdf Size:106K _harris_semi

. . 0.83 W/oC o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to +150 C o Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 260 C Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 4 �s Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 13 �s NOTE: 1. Repetitive

1.83. 2n6040-45.pdf Size:199K _mospec

1.84. 2n6053-56.pdf Size:172K _mospec

1.85. 2n6032.pdf Size:290K _no

1.86. 2n6079.pdf Size:10K _semelab

1.87. 2n6078.pdf Size:17K _semelab

B2 0.3 0.75 td Delay Time 0.02 THERMAL CHARACTERISTICS R?JC Thermal Resistance Junction to Case 3.9 �C/W * Pulse test tp = 350�s , ? = 2 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify

1.88. 2n6077.pdf Size:10K _semelab

1.89. tsm2n60_c07.pdf Size:163K _taiwansemi

1.90. 2n6093.pdf Size:24K _advanced-semi

1.91. 2n6050_2n6051_2n6052_2n6057_2n6058_2n6059.pdf Size:195K _bocasemi

1.92. kf12n60p-f.pdf Size:898K _kec

Time - 370 - ns s Qrr dIs/dt=100A/? Reverse Recovery Charge - 4.6 - ? C Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =5.7mH, IS=12A, VDD=50V, RG=25?, Starting Tj=25?. Note 3) IS?12A, dI/dt?200A/?, VDD?BVDSS, Starting Tj=25?. Note 4) Pulse Test : Pulse width ? 300?, Duty Cycle ? 2%. Note 5) Essentially independent of operating temperature. Marking 2010. 8. 12 Revision No : 3 2/7 KF12N60P/F 2010. 8. 12 Revision No : 3 3/7 KF12N60P/F 2010. 8.

1.93. kf2n60p-f.pdf Size:415K _kec

eakage Current VGS=±30V, VDS=0V - - ±100 nA RDS(ON) VGS=10V, ID=1.0A Drain-Source ON Resistance - 3.7 4.4 ? Dynamic Qg Total Gate Charge - 6.0 - VDS=480V, ID=2A Qgs Gate-Source Charge - 1.0 - nC VGS=10V (Note4,5) Qgd Gate-Drain Charge - 2.8 - td(on) Turn-on Delay time - 10 - tr VDD=300V Turn-on Rise time - 20 - ID=2A ns td(off) RG=25? Turn-off Delay time - 25 - (Note4,5) tf Turn-off Fall time - 20 - Ciss Input Capacitance - 270 - Coss VDS=25V, VGS=0V, f=1.0MHz Output

1.94. kf2n60d-i.pdf Size:386K _kec

Delay time - 10 - VDD=300V tr Turn-on Rise time - 20 - ID=2A ns td(off) Turn-off Delay time - 25 - RG=25? (Note4,5) tf Turn-off Fall time - 20 - Ciss Input Capacitance - 270 - Coss VDS=25V, VGS=0V, f=1.0MHz Output Capacitance - 35 - pF Crss Reverse Transfer Capacitance - 3.9 - Source-Drain Diode Ratings IS Continuous Source Current - - 2 VGS

1.95. kf2n60l.pdf Size:1007K _kec

Source Current - - 0.7 VGS

1.96. kmb8d2n60qa.pdf Size:49K _kec

1% 2007. 9. 3 Revision No : 1 2/4 KMB8D2N60QA Fig1. ID - VDS Fig2. RDS(ON) - ID 40 50 Common Source Common Source VGS=8V, 10V Ta=25 C Ta=25 C Pulse Test VGS=6V Pulse Test 40 30 VGS=5.5V 30 VGS=4.0V VGS=4.5V 20 20 VGS=10V 10 VGS=3.5V 10 0 0 0 4 8 12 16 20 0 10 20 30 40 50 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS Fig4. RDS(ON) - Tj 60 40 Common Source Common Source VDS=5V VGS=10V 50 Pulse Test Pulse Test 30 40 30 20 20 10 150 C

1.97. 2n6080_2n6084.pdf Size:279K _microsemi

1.98. 2n6052.pdf Size:72K _inchange_semiconductor

1.99. 2n6058_2n6059.pdf Size:131K _inchange_semiconductor

1.100. 2n6053_2n6054.pdf Size:131K _inchange_semiconductor

1.101. 2n6039.pdf Size:199K _inchange_semiconductor

1.102. 2n6049.pdf Size:130K _inchange_semiconductor

1.103. 2n6037_2n6038_2n6039.pdf Size:121K _inchange_semiconductor

1.104. 2n6057.pdf Size:105K _inchange_semiconductor

1.105. 2n6034_2n6035_2n6036.pdf Size:123K _inchange_semiconductor

1.106. 2n6098_2n6099_2n6100_2n6101.pdf Size:119K _inchange_semiconductor

1.107. 2n6059.pdf Size:175K _inchange_semiconductor

1.108. 2n6029_2n6030.pdf Size:131K _inchange_semiconductor

1.109. 2n6031.pdf Size:117K _inchange_semiconductor

1.110. 2n6043_2n6044_2n6045.pdf Size:73K _inchange_semiconductor

1.111. 2n6055_2n6056.pdf Size:132K _inchange_semiconductor

1.112. 2n6077_2n6078_2n6079.pdf Size:127K _inchange_semiconductor

1.113. 2n60p_2n60f_2n60i_2n60d.pdf Size:782K _wietron

25V,f=1.0MHz Coss - 30 45 pF Reverse Transfer Capacitance @VGS=0V,VDS=25V,f=1.0MHz Crss - 3 5.6 Switching Turn-on Delay Time td(on) - 13 30 VDD=300V,ID =2.0A,RG=25?(Note 4, 5) Turn-on Rise Time tr - 1 2 60 VDD=300V,ID =2.0A,RG=25?(Note 4, 5) ns Turn-off Delay Time td(off) - 73 100 VDD=300V,ID =2.0A,RG=25?(Note 4, 5) Turn-off Fall Time tf - 1 4.3 70 VDD=300V,ID =2.0A,RG=25?(Note 4, 5) Total Gate Charge - Qg 9.3 13 VDS =480V,ID =7.5A,VGS =10V(Note 4, 5) Gate-Source Ch

Otros transistores... 2N5994 , 2N5995 , 2N5996 , 2N5998 , 2N5999 , 2N59A , 2N59B , 2N59C , 2SC114 , 2N600 , 2N6000 , 2N6001 , 2N6002 , 2N6003 , 2N6004 , 2N6005 , 2N6006 .


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