2N6134
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: 2N6134
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
Tensión colector-base (Ucb): 80
Tensión colector-emisor (Uce): 80
Tensión emisor-base (Ueb): 5
Corriente del colector DC máxima (Ic): 7
Temperatura operativa máxima (Tj), °C: 150
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 2
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 20
Empaquetado / Estuche: TO220
Búsqueda de reemplazo de transistor bipolar 2N6134
2N6134
PDF doc:
1.1. 2n6132_2n6133_2n6134.pdf  Size:119K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION Ў¤ With TO-220 package Ў¤ High power dissipation Ў¤ Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Ў¤ Power amplifier and medium speed switching applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2N6132 2N6133 2N6134
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25Ўж )
SYMBOL
PARAMETER
2N6132 2N6133
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CHA IN
NG S
2N6134 2N6132 2N6133 2N6134
Open emitter
OND MIC E
CONDITIONS
TOR UC
VALUE -40 -60 -80 -40 -60 -80
UNIT
V
Open base
V
VEBO IC IB PT Tj Tstg
Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature
Open collector
-5 -7 -3
V A A W Ўж Ўж
TC=25Ўж
50 150 -65~150
THERMAL CHARACTERISTICS
SY |
5.1. 2n6137.pdf Size:137K _unitrode 5.2. 2n6129_2n6130_2n6131.pdf Size:120K _inchange_semiconductor  |
 | Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION Ў¤ With TO-220 package Ў¤ High power dissipation Ў¤ Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Ў¤ Power amplifier and medium speed switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2N6129 2N6130 2N6131
Absolute maximum ratings(Ta=25Ўж )
SYMBOL
PARAMETER
2N6129 2N6130
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CHA IN
NG S
2N6131 2N6129 2N6130 2N6131
Open emitter
OND MIC E
CONDITIONS
TOR UC
VALUE 40 60 80 40 60 80
UNIT
V
Open base
V
VEBO IC IB PT Tj Tstg
Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature
Open collector
5 7 3
V A A W Ўж Ўж
TC=25Ўж
50 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction t |
Otros transistores... 2N6127
, 2N6128
, 2N6129
, 2N613
, 2N6130
, 2N6131
, 2N6132
, 2N6133
, BD699
, 2N6135
, 2N6136
, 2N614
, 2N615
, 2N616
, 2N6166
, 2N617
, 2N6175
.
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