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2SA1024
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2N2786 .. 2N2982
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2N4074 .. 2N466
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2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SA1024 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1024

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4

Tensión colector-base (Ucb): 400

Tensión colector-emisor (Uce): 360

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 15

Capacitancia de salida (Cc), pF: 4

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 2SA1024

2SA1024 PDF doc:

4.1. 2sa1020.pdf Size:167K _toshiba

2SA1024
2SA1024
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i

4.2. 2sa1020-d.pdf Size:93K _onsemi

2SA1024
2SA1024
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http://onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @ TA = 25C PD 900 mW Derate above 25C 5.0 mW/C 3 PNP BASE Total Power Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C 1 Operating and Storage Junction Temperature TJ, Tstg -55 to C Range +150 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum TO-92 (TO-226) Ratings are stress ratings only. Functional operation above the Recommended CASE 29-10 1 1 Operating Conditions is not implied.

4.3. 2sa1022.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.4. 2sa1022_e.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.5. 2sa1020.pdf Size:634K _utc

2SA1024
2SA1024
UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR ? DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. ? FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0?s(TYP) *Complement to UTC 2SC2655 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R SOT-23 E B C Tape Reel 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R SOT-89 B C E Tape Reel 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B TO-92NL E C B Tape Box 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING A10 L: Lead Free SOT-23 G: Halogen Free 1 SOT-89 TO-92NL www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-007.F 1 2SA1020 PNP SILICON TRANSISTOR ? ABSOLUT

4.6. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curre

4.7. 2sa1025_2sa1081_2sa1082.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage VCEO 60 90 120 V Emitter to base voltage VEBO 5 5 5 V Collector current IC 100 100 100 mA Emitter current IE 100 100 100 mA Collector power dissipation PC 400 400 400 mW Junction temperature Tj 150 150 150 C Storage temperature Tstg 55 to +150 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1025 2SA1081 2SA1082 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 60 90 120 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 60 90 120 V IC = 1 mA, breakdown volta

4.8. 2sa1020.pdf Size:421K _secos

2SA1024
2SA1024
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES N ? Power amplifier applications G H ?Emitter ? Collector ? Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector ?? Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 ?? D 4.50 5.30 L 1.60 Max Emitter E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 900 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTIC

4.9. 2sa1021.pdf Size:146K _jmnic

2SA1024
2SA1024
JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=? -150 V V(BR)CB

4.10. 2sa1021.pdf Size:137K _inchange_semiconductor

2SA1024
2SA1024
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vol

4.11. 2sa1020.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.270 TYP 2.440 TJ Junction Temperature 150 ? 2.640 Dimensions in inches and (millimeters) 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.300 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 1.580 Parameter Symbol Test conditions MIN TYP MAX UNIT 4.000 Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Co

4.12. 2sa1020_to-92mod.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.200 IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.500 TYP 2.900 Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 3.100 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.380 0. ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 400 4.700 0.500 5.100 1.730 Parameter Symbol Test conditions MIN TYP MAX UNIT 2.030 4.000 Collector-base breakdown voltage V(BR)CBO -50 V IC =-100ВµA,IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC =-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100В

4.13. 2sa1020.pdf Size:429K _wietron

2SA1024
2SA1024
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-500 mAdc, VCE=-2.0 Vdc) hFE (1) 240 70 - - (IC=-1500 mAdc, VCE=-2.0 Vdc) - hFE (2) 40 Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-1000 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage VBE(sat) - - -1.2 Vdc (IC=-1000 mAdc, IB=-50mAdc) Current-Gain-Bandwidth Product - fT - 100 MHz (IC=-500 mAdc, VCE=-2 Vdc) Collector Output Capacitance Cob - -40 PF - V =-10V, I =0, f= 1MHZ CB E Switching Time - Turn-on time ton 0.1 - IB2 OUTPUT 20us IB2 INPUT tstg Storage time 1.0 us - - IB1 IB1 - IB1 = =0.05A IB2 t - f 0.1 Fall time - VCC =-30

Otros transistores... 2SA1019 , 2SA102 , 2SA1020 , 2SA1020-O , 2SA1020-Y , 2SA1021 , 2SA1022 , 2SA1023 , AC128 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 .

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