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2SA1024
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2SA1024
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2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU433
BU4508AF .. BUL50B
BUL510 .. BUV18X
BUV19 .. BUX62
BUX63 .. C5T4997
C5T5400 .. CDQ10053
CDQ10054 .. CIL769
CIL771 .. CMMT495
CMMT551 .. CS718A
CS720A .. CSB772E
CSB772P .. CSD1047OF
CSD1047YF .. CZD1952
CZD2983 .. D38L4
D38L4-6 .. D44TD3
D44TD4 .. DC5441
DC5442 .. DTA114YCA
DTA114YE .. DTC124XCA
DTC124XE .. DW7039
DW7050 .. ECG324
ECG325 .. ERS275
ERS301 .. F121
F121A .. FJP3305
FJP3307D .. FMMT4250
FMMT4250A .. FT2384
FT2551 .. FZTA14
FZTA42 .. GES3962
GES4058 .. GFT25R
GFT31 .. GT250/8C
GT250/8D .. HA7207
HA7501 .. HMBTH10
HMJE13001 .. HUN2237
HUN2238 .. JC501P
JC501Q .. KDY24
KDY25 .. KRA721E
KRA721F .. KRC651U
KRC652E .. KSA1625L
KSA1625M .. KSC2334-Y
KSC2335 .. KSD1588-O
KSD1588-R .. KSR1011
KSR1012 .. KT3140V
KT3142A .. KT603D
KT603E .. KT8110V
KT8112A .. KT838B
KT839A .. KTA1517
KTA1517S .. KTC5001L
KTC5027 .. MA0491
MA0492 .. ME8002
ME8003 .. MJ480
MJ481 .. MJE3312
MJE3370 .. MM3725
MM3726 .. MMBT4141
MMBT4142 .. MMUN2113LT1
MMUN2113LT2 .. MP3638
MP3638A .. MPQ4888
MPQ4889 .. MPS6602
MPS6651 .. MRF243
MRF244 .. MUN5311DW
MUN5311DW1 .. NA42WG
NA42WH .. NB121F
NB121FH .. NB312Z
NB313E .. NPS3564
NPS3565 .. NSS12100UW
NSS12100XV6T1G .. OC410
OC41N .. PBSS301ND
PBSS301NX .. PDTC144VU
PDTC144WE .. PN3725
PN3742 .. PZT195A
PZT2222A .. RN1113CT
RN1113FS .. RN2118MFV
RN2119MFV .. RS-2013
RS1049 .. SCE540
SCH2202 .. SFT317
SFT319 .. SQ2222A
SQ2222AF .. ST5771-2
ST6008 .. SUR539J
SUR540EF .. T2580
T2588 .. TI459
TI460 .. TIP642
TIP645 .. TN2907
TN2907A .. TP3827
TP3866 .. UMB1N
UMB2N .. UN6113
UN6114 .. ZDT694
ZDT749 .. ZTX321M
ZTX322 .. ZXTN2010A
ZXTN2010G .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SA1024 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1024

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4

Tensión colector-base (Ucb): 400

Tensión colector-emisor (Uce): 360

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 15

Capacitancia de salida (Cc), pF: 4

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 2SA1024

2SA1024 PDF doc:

4.1. 2sa1020.pdf Size:167K _toshiba

2SA1024
2SA1024
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i

4.2. 2sa1020-d.pdf Size:93K _onsemi

2SA1024
2SA1024
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http://onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @ TA = 25C PD 900 mW Derate above 25C 5.0 mW/C 3 PNP BASE Total Power Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C 1 Operating and Storage Junction Temperature TJ, Tstg -55 to C Range +150 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum TO-92 (TO-226) Ratings are stress ratings only. Functional operation above the Recommended CASE 29-10 1 1 Operating Conditions is not implied.

4.3. 2sa1022.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.4. 2sa1022_e.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.5. 2sa1020.pdf Size:634K _utc

2SA1024
2SA1024
UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR ? DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. ? FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0?s(TYP) *Complement to UTC 2SC2655 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R SOT-23 E B C Tape Reel 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R SOT-89 B C E Tape Reel 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B TO-92NL E C B Tape Box 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING A10 L: Lead Free SOT-23 G: Halogen Free 1 SOT-89 TO-92NL www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-007.F 1 2SA1020 PNP SILICON TRANSISTOR ? ABSOLUT

4.6. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curre

4.7. 2sa1025_2sa1081_2sa1082.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage VCEO 60 90 120 V Emitter to base voltage VEBO 5 5 5 V Collector current IC 100 100 100 mA Emitter current IE 100 100 100 mA Collector power dissipation PC 400 400 400 mW Junction temperature Tj 150 150 150 C Storage temperature Tstg 55 to +150 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1025 2SA1081 2SA1082 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 60 90 120 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 60 90 120 V IC = 1 mA, breakdown volta

4.8. 2sa1020.pdf Size:421K _secos

2SA1024
2SA1024
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES N ? Power amplifier applications G H ?Emitter ? Collector ? Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector ?? Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 ?? D 4.50 5.30 L 1.60 Max Emitter E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 900 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTIC

4.9. 2sa1021.pdf Size:146K _jmnic

2SA1024
2SA1024
JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=? -150 V V(BR)CB

4.10. 2sa1021.pdf Size:137K _inchange_semiconductor

2SA1024
2SA1024
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vol

4.11. 2sa1020.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.270 TYP 2.440 TJ Junction Temperature 150 ? 2.640 Dimensions in inches and (millimeters) 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.300 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 1.580 Parameter Symbol Test conditions MIN TYP MAX UNIT 4.000 Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Co

4.12. 2sa1020_to-92mod.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.200 IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.500 TYP 2.900 Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 3.100 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.380 0. ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 400 4.700 0.500 5.100 1.730 Parameter Symbol Test conditions MIN TYP MAX UNIT 2.030 4.000 Collector-base breakdown voltage V(BR)CBO -50 V IC =-100ВµA,IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC =-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100В

4.13. 2sa1020.pdf Size:429K _wietron

2SA1024
2SA1024
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-500 mAdc, VCE=-2.0 Vdc) hFE (1) 240 70 - - (IC=-1500 mAdc, VCE=-2.0 Vdc) - hFE (2) 40 Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-1000 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage VBE(sat) - - -1.2 Vdc (IC=-1000 mAdc, IB=-50mAdc) Current-Gain-Bandwidth Product - fT - 100 MHz (IC=-500 mAdc, VCE=-2 Vdc) Collector Output Capacitance Cob - -40 PF - V =-10V, I =0, f= 1MHZ CB E Switching Time - Turn-on time ton 0.1 - IB2 OUTPUT 20us IB2 INPUT tstg Storage time 1.0 us - - IB1 IB1 - IB1 = =0.05A IB2 t - f 0.1 Fall time - VCC =-30

Otros transistores... 2SA1019 , 2SA102 , 2SA1020 , 2SA1020-O , 2SA1020-Y , 2SA1021 , 2SA1022 , 2SA1023 , AC128 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 .

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