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2SA1024
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2SA1024
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2SA1024
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2SA1294-O .. 2SA1421
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2SC1741AS .. 2SC1961
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2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
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2SC2872 .. 2SC3111
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2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
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2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
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2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
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2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
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BC357 .. BC508FB
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BC828-16 .. BCAP11/6
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BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
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BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
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BU323Z .. BUL1203EFP
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CX956A .. D34C4
D34C5 .. D44H4
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FMMT459 .. FT3567
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HA7527 .. HN1A01FU
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KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
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KT315A .. KT6102A
KT6103A .. KT8121B-2
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KT847B .. KTA1659
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MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
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MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
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NST846BF3T5G .. OC66N
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PBSS4160U .. PEMH13
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QSX1 .. RN1409
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S022011 .. SD600
SD601 .. SGSF424
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STC2073D .. SX37010
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TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SA1024 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1024

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4

Tensión colector-base (Ucb): 400

Tensión colector-emisor (Uce): 360

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 0.1

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 15

Capacitancia de salida (Cc), pF: 4

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: TO18

Búsqueda de reemplazo de transistor bipolar 2SA1024

2SA1024 PDF doc:

4.1. 2sa1020.pdf Size:167K _toshiba

2SA1024
2SA1024
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i

4.2. 2sa1020-d.pdf Size:93K _onsemi

2SA1024
2SA1024
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http://onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @ TA = 25C PD 900 mW Derate above 25C 5.0 mW/C 3 PNP BASE Total Power Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C 1 Operating and Storage Junction Temperature TJ, Tstg -55 to C Range +150 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum TO-92 (TO-226) Ratings are stress ratings only. Functional operation above the Recommended CASE 29-10 1 1 Operating Conditions is not implied.

4.3. 2sa1022.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.4. 2sa1022_e.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 0.1 to 0.3 Collector to emitter voltage VCEO 20 V 0.4 0.2 Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO236 2:Emitter EIAJ:SC59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg 55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 A Collector cutoff current ICEO VCE = 20V, IB = 0 100 A Emitter cutoff curr

4.5. 2sa1025_2sa1081_2sa1082.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage VCEO 60 90 120 V Emitter to base voltage VEBO 5 5 5 V Collector current IC 100 100 100 mA Emitter current IE 100 100 100 mA Collector power dissipation PC 400 400 400 mW Junction temperature Tj 150 150 150 C Storage temperature Tstg 55 to +150 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1025 2SA1081 2SA1082 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 60 90 120 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 60 90 120 V IC = 1 mA, breakdown volta

4.6. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curre

4.7. 2sa1020.pdf Size:421K _secos

2SA1024
2SA1024
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES N ? Power amplifier applications G H ?Emitter ? Collector ? Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector ?? Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 ?? D 4.50 5.30 L 1.60 Max Emitter E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 900 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTIC

4.8. 2sa1021.pdf Size:137K _inchange_semiconductor

2SA1024
2SA1024
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large current capacity APPLICATIONS ·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vol

4.9. 2sa1020_to-92mod.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.200 IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.500 TYP 2.900 Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 3.100 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.380 0. ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 400 4.700 0.500 5.100 1.730 Parameter Symbol Test conditions MIN TYP MAX UNIT 2.030 4.000 Collector-base breakdown voltage V(BR)CBO -50 V IC =-100ВµA,IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC =-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100В

4.10. 2sa1020.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.270 TYP 2.440 TJ Junction Temperature 150 ? 2.640 Dimensions in inches and (millimeters) 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.300 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 1.580 Parameter Symbol Test conditions MIN TYP MAX UNIT 4.000 Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Co

4.11. 2sa1020.pdf Size:429K _wietron

2SA1024
2SA1024
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-500 mAdc, VCE=-2.0 Vdc) hFE (1) 240 70 - - (IC=-1500 mAdc, VCE=-2.0 Vdc) - hFE (2) 40 Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-1000 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage VBE(sat) - - -1.2 Vdc (IC=-1000 mAdc, IB=-50mAdc) Current-Gain-Bandwidth Product - fT - 100 MHz (IC=-500 mAdc, VCE=-2 Vdc) Collector Output Capacitance Cob - -40 PF - V =-10V, I =0, f= 1MHZ CB E Switching Time - Turn-on time ton 0.1 - IB2 OUTPUT 20us IB2 INPUT tstg Storage time 1.0 us - - IB1 IB1 - IB1 = =0.05A IB2 t - f 0.1 Fall time - VCC =-30

Otros transistores... 2SA1019 , 2SA102 , 2SA1020 , 2SA1020-O , 2SA1020-Y , 2SA1021 , 2SA1022 , 2SA1023 , AC128 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 .

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