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100DA025D .. 2N1015E
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2N1673 .. 2N201
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2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SA1215 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1215

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-base (Ucb): 160

Tensión colector-emisor (Uce): 160

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50

Capacitancia de salida (Cc), pF: 400

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: MT200

Búsqueda de reemplazo de transistor bipolar 2SA1215

2SA1215 PDF doc:

1.1. 2sa1215.pdf Size:27K _sanken-ele

2SA1215
2SA1215
LAPT 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB=160V 100max A 0.2 24.4 2.1 VCEO 160 V IEBO VEB=5V 100max A 0.1 2-o3.2 9 VEBO 5 V V(BR)CEO IC=25mA 160min V IC hFE VCE=4V, IC=5A 50min? 15 A a IB VCE(sat) IC=5A, IB=0.5A 2.0max V 4 A b PC fT VCE=12V, IE=2A 50typ MHz 150(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 400typ pF 150 C 3 Tstg 55 +150 C -0.1 to 0.65+0.2 to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 1.05+0.2 -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g (V) (?) (A) (V) (mA) (mA) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 5 500 500 0.25ty

1.2. 2sa1215.pdf Size:210K _inchange_semiconductor

2SA1215
2SA1215
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION ·With MT-200 package ·Complement to type 2SC2921 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A IBB Base current -4 A PC Collector power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1215 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=-25mA ; IBB=0 -160 V VC

4.1. 2sa1217.pdf Size:95K _toshiba

2SA1215
2SA1215
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sa1213.pdf Size:223K _toshiba

2SA1215
2SA1215
2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A PW-MINI Base current IB -0.4 A JEDEC ? PC 500 Collector power dissipation mW JEITA SC-62 PC 1000 (Note 1) TOSHIBA 2-5K1A Junction temperature Tj 150 C Weight: 0.05 g (typ.) Storage temperature range Tstg -55 to 150 C Note 1: Mounted on ceramic substrate (250 mm2 ? 0.8 t) 1 2002-08-19 2SA1213 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit

4.3. 2sa1210.pdf Size:274K _sanyo

2SA1215
2SA1215
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sa1216.pdf Size:27K _sanken-ele

2SA1215
2SA1215
LAPT 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application : Audio and General Purpose Electrical Characteristics (Ta=25C) External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Symbol Ratings Unit SymboI Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 180 V VCBO VCB=180V 100max A 0.2 24.4 2.1 0.1 VCEO 180 V IEBO VEB=5V 100max A 2-o3.2 9 VEBO 5 V IC=25mA 180min V V(BR)CEO IC 17 hFE VCE=4V, IC=8A 30min? A a b IB 5 VCE(sat) IC=8A, IB=0.8A 2.0max V A PC 200(Tc=25C) fT VCE=12V, IE=2A 40typ MHz W 2 Tj 150 COB VCB=10V, f=1MHz 500typ pF C 3 0.65+0.2 -0.1 to Tstg 55 +150 1.05+0.2 -0.1 C to to to to ? hFE Rank O(30 60), Y(50 100), P(70 140), G(90 180) +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (A) (A) ( s) ( s) ( s) a. Part No. b. Lot No. 40 4 10 5

4.5. 2sa1217.pdf Size:190K _inchange_semiconductor

2SA1215
2SA1215
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION · ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -40 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A IBB Base current -1 A PD Total power dissipation TC=25? 10 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1217 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO C

4.6. 2sa1216.pdf Size:144K _inchange_semiconductor

2SA1215
2SA1215
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -17 A IBB Base Current-Continuous -5 A Collector Power Dissipation PC @ TC=25? 200 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1216 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -180 V Collector

4.7. 2sa1213.pdf Size:183K _htsemi

2SA1215
2SA1215
2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW R?JA Thermal Resistance From Junction To Ambient 250 ?/W Tj Junction Temperature 150 ? Tstg Storage Temperature -55~+150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter c

4.8. 2sa1213 .pdf Size:520K _willas

2SA1215
2SA1215
2SA1213 -89 Plastic-Encapsulate Transistors SOT TRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package 1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time 3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current -2 A PC Collector Power Dissipation 500 mW R?JA Thermal Resistance From Junction To Ambient 250 ?/W Tj Junction Temperature 150 ? Tstg Storage Temperature -55~+150 ? ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA

Otros transistores... 2SA121 , 2SA1210 , 2SA1210R , 2SA1210S , 2SA1210T , 2SA1211 , 2SA1213 , 2SA1214 , TIP2955 , 2SA1215-O , 2SA1215-P , 2SA1215-Y , 2SA1216 , 2SA1216-G , 2SA1216-O , 2SA1216-P , 2SA1216-Y .

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