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Liste
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SA1494 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA1494

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200

Tensión colector-base (Ucb): 200

Tensión colector-emisor (Uce): 200

Tensión emisor-base (Ueb): 6

Corriente del colector DC máxima (Ic): 17

Temperatura operativa máxima (Tj), °C: 150

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 20

Capacitancia de salida (Cc), pF: 500

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: MT200

Búsqueda de reemplazo de transistor bipolar 2SA1494

2SA1494 PDF doc:

1.1. 2sa1494.pdf Size:28K _sanken-ele

2SA1494
2SA1494
2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB=200V 100max A 0.2 24.4 2.1 VCEO IEBO VEB=6V 100max A 200 V 0.1 2-o3.2 9 VEBO V(BR)CEO IC=50mA 200min V 6 V IC hFE VCE=4V, IC=8A 50min? 17 A a IB VCE(sat) IC=10A, IB=1A 2.5max V 5 A b PC fT VCE=12V, IE=1A 20typ MHz 200(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 500typ pF 150 C 3 0.65+0.2 -0.1 Tstg 55 +150 C ? hFE Rank Y(50 100), P(70 140), G(90 180) to to to to 1.05+0.2 -0.1 +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Part No. 40 4 10 10 5 1 1 0.6typ 0.9typ 0

1.2. 2sa1494.pdf Size:143K _inchange_semiconductor

2SA1494
2SA1494
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IBB Base Current-Continuous -5 A Collector Power Dissipation PC @ TC=25? 200 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V Collector-Emitter Satura

4.1. 2sa1497.pdf Size:88K _sanyo

2SA1494
2SA1494

4.2. 2sa1499.pdf Size:59K _panasonic

2SA1494
2SA1494
Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High foward current transfer ratio hFE High-speed switching ? 3.1 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25?C) +0.2 0.5 0.1 Parameter Symbol Ratings Unit 0.8 0.1 Collector to base voltage VCBO 400 V 2.54 0.25 Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V 5.08 0.5 1 2 3 Peak collector current ICP 1.2 A 1:Base Collector current IC 0.6 A 2:Collector 3:Emitter Collector power TC=25 C 25 PC W TO220 Full Pack Package(a) dissipation Ta=25 C 2 Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 400V, IE = 0 100 A Emitt

4.3. 2sa1490.pdf Size:25K _wingshing

2SA1494
2SA1494
2SA1490 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Collector Dissipation PC 80 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -160 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -120 V Emitter Base Breakdown Voltage BVEBO RBE=? -6 V Collector Cutoff Current ICBO IE=-5mA IC=0 -0.1 mA Emitter Cutoff Current IEBO VCB=-60V IE=0 -0.1 mA *DC Current Gain hFE1 VEB=-4V IC=0 55 160 DC Current Gain hFE2 VCE=-5V IC=-1A 50 Collector- Emitter Saturation Volta

4.4. 2sa1491.pdf Size:25K _wingshing

2SA1494
2SA1494
2SA1491 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Collector Dissipation PC 100 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-5 mA IE=0 -200 V Collector Emitter Breakdown Voltage BVCEO IC=-10 mA -140 V Emitter Base Breakdown Voltage BVEBO RBE=? -6 V Collector Cutoff Current ICBO IE=-5mA IC=0 -0.1 mA Emitter Cutoff Current IEBO VCB=-100V IE=0 -0.1 mA *DC Current Gain hFE1 VEB=-4V IC=0 55 160 DC Current Gain hFE2 VCE=-5V IC=-1A 50 Collector- Emitter Saturation Vo

4.5. 2sa1492.pdf Size:28K _sanken-ele

2SA1494
2SA1494
2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application : Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 180 V ICBO VCB=180V 100max A VCEO 180 V IEBO VEB=6V 100max A VEBO 6 V V(BR)CEO IC=50mA 180min V a 0.1 o3.2 IC 15 A hFE VCE=4V, IC=3A 50min? b IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 130(Tc=25C) W fT VCE=12V, IE=0.5A 20typ MHz 2 Tj C COB VCB=10V, f=1MHz 500typ pF 3 150 Tstg 55 +150 C to to to -0.1 -0.1 to 1.05+0.2 0.65+0.2 ? hFE Rank O(50 100), P(70 140), Y(90 180) 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) ( s) ( s) ( s) a. Part No. b. Lot No. 40 4 10 10 5 1 1 0.6typ 0.9typ 0.2typ I

4.6. 2sa1493.pdf Size:28K _sanken-ele

2SA1494
2SA1494
2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application : Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB=200V 100max A 0.2 24.4 2.1 0.1 2-o3.2 9 VCEO 200 V IEBO VEB=6V 100max A VEBO 6 V IC=50mA 200min V V(BR)CEO IC hFE VCE=4V, IC=5A 50min? a 15 A b IB VCE(sat) IC=10A, IB=1A 3.0max V 5 A PC fT VCE=12V, IE=0.5A 20typ MHz 150(Tc=25C) W 2 Tj COB VCB=10V, f=1MHz 400typ pF 150 C 3 0.65+0.2 -0.1 1.05+0.2 -0.1 Tstg 55 to +150 C to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) +0.3 3.0 -0.1 0.1 0.1 5.45 5.45 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 18.4g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 10 5 500

4.7. 2sa1492.pdf Size:181K _inchange_semiconductor

2SA1494
2SA1494
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3856 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IBB Base Current-Continuous -4 A Collector Power Dissipation PC @ TC=25? 130 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1492 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -180 V Collector-Emitter Sat

4.8. 2sa1490.pdf Size:200K _inchange_semiconductor

2SA1494
2SA1494
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3854 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -8 A IBB Base current -3 A PC Collector power dissipation TC=25? 80 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1490 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -120 V VCEsat Collector-

4.9. 2sa1493.pdf Size:252K _inchange_semiconductor

2SA1494
2SA1494
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION · ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A IBB Base current -5 A PC Collectorl power dissipation TC=25? 150 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1493 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -200 V

4.10. 2sa1491.pdf Size:341K _inchange_semiconductor

2SA1494
2SA1494
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION ·With TO-3PN package ·Complement to type 2SC3855 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -140 V VCEO Collector-emitter voltage Open base -140 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -10 A IBB Base current -4 A PC Collector power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1491 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -140 V VCEsat Collect

Otros transistores... 2SA1492 , 2SA1492-O , 2SA1492-P , 2SA1492-Y , 2SA1493 , 2SA1493-O , 2SA1493-P , 2SA1493-Y , BC548B , 2SA1494-G , 2SA1494-P , 2SA1494-Y , 2SA1495 , 2SA1496 , 2SA1497 , 2SA1498 , 2SA1499 .

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