2SB1382
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características Número de Parte: 2SB1382
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75
Tensión colector-base (Ucb): 120
Tensión colector-emisor (Uce): 120
Tensión emisor-base (Ueb): 3
Corriente del colector DC máxima (Ic): 16
Temperatura operativa máxima (Tj), °C: 175
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft):
Capacitancia de salida (Cc), pF:
Ganancia de corriente contínua (hfe): 2000
Empaquetado / Estuche: TO218
Búsqueda de reemplazo de transistor bipolar 2SB1382
2SB1382
- PDF Hoja de especificaciones para ver o descargar
1.1. 2sb1382.pdf  Size:30K _sanken-ele  |
 |
(W)
12mA
20mA
40mA
6mA
3mA
=1.5mA
B
I
125?C (Case Temp)
25?C (Case Temp)
30?C (Case Temp)
125?C
25?C
30?C
100
1ms
10ms
s
With Infinite heatsink
DC
|
1.2. 2sb1382.pdf Size:138K _inchange_semiconductor 4.1. 2sb1381.pdf Size:222K _toshiba 4.2. 2sb1388.pdf Size:125K _sanyo 4.3. 2sb1386_2sb1412_2sb1326.pdf Size:93K _rohm  |
 | ype hFE unit (pieces)
2SB1386 PQR - -
2SB1412 PQR - -
2SB1326 QR - -
hFE values are classified as follows :
Item P Q R
hFE 82~180 120~270 180~390
2SB1386 / 2SB1412 / 2SB1326
Transistors
Electrical characteristic curves
-10 -5 5k
-50mA
Ta=25C
VCE=-2V Ta=25C
-45mA
-5
-40mA
2k
-35mA
-2
-4
Ta=100C
1k
-1
25C
-25C -15mA
-500m
500
-3
-200m VCE=-5V
-10mA 200
-100m
100
-2V
-50m
-2
-1V
50
-20m -5mA
-10m
-1 20
-5m
10
-2m
IB=0A
5
-1m 0
0 -0.4 -0.8 -1.2 |
4.4. 2sb1386.pdf Size:155K _rohm 4.5. 2sb1387.pdf Size:368K _hitachi 4.6. 2sb1389.pdf Size:35K _hitachi  |
 | ector current IC (A)
Transient Thermanl Resistance
10
3
TC = 25C
1.0
0.3
0.1
1m 10m 100m 1.0 10 100 1000
4
BE (sat)
CE (sat)
V
(V)
V
(V)
Base to emitter saturation voltage
Collector to emitter saturation voltage
j-c
Thermal resistance
?
(
C/W)
10.0 0.3 Unit: mm
2.8 0.2
7.0 0.3 ? 3.2 0.2
2.5 0.2
1.2 0.2
1.4 0.2
4.45 0.3
2.5
0.7 0.1
2.54 0.5 2.54 0.5
0.5 0.1
Hitachi Code TO-220FM
JEDEC
EIAJ Conforms
Weight (reference value) 1.8 g
|
4.7. 2sb1386.pdf Size:507K _secos 4.8. 2sb1383.pdf Size:29K _sanken-ele  |
 |
)
Maximum Power Dissipation P
C
(W)
6.0mA
8.0mA
4.0mA
2.5mA
125?C (Case Temp)
25?C (Case Temp)
30?C (Case Temp)
125?C
25?C
30?C
1ms
With Infinite heatsink
10ms
DC
|
4.9. 2sb1389.pdf Size:112K _inchange_semiconductor 4.10. 2sb1383.pdf Size:228K _inchange_semiconductor 4.11. 2sb1381.pdf Size:115K _inchange_semiconductor 4.12. 2sb1386.pdf Size:390K _htsemi 4.13. 2sb1386.pdf Size:280K _lge 4.14. 2sb1386.pdf Size:208K _wietron  |
 | or output capacitance
vs. collector-base voltage
WEITRON
3/4 28-Oct-05
http://www.weitron.com.tw
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
2SB1386
SOT-89 Outline Dimensions
unit:mm
SOT-89
Dim
Min
Max
E
A 1.400
1.600
A
G
B 0.320
0.520
C 0.360
0.560
D 0.350
0.440
H
J C
E 4.400
4.600
G 1.400
1.800
H 2.300
2.600
B D
J 3.940 |
Otros transistores... 2SB1372
, 2SB1373
, 2SB1375
, 2SB1376
, 2SB1377
, 2SB1378
, 2SB138
, 2SB1381
, 2SC114
, 2SB1383
, 2SB1386
, 2SB1387
, 2SB1388
, 2SB1389
, 2SB138A
, 2SB138B
, 2SB1390
.
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