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2SB1416
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  2SB1416
 
2SB1416
  2SB1416
  2SB1416
 
2SB1416
  2SB1416
 
 
Liste
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SB1416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1416

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 3

Temperatura operativa máxima (Tj), °C: 165

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 160

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SB1416

2SB1416 PDF doc:

1.1. 2sb1416.pdf Size:82K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.70.1 Allowing automatic insertion with radial taping 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C 0.50.1 0.40.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V 0.8 C 1 2 3 Collector-emitter voltage (Base open) VCEO -60 V 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 2.50.2 2.50.2 3: Base Collector current IC -3 A MT-3-A1 Package Peak collector current ICP -5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Un

4.1. 2sb1411.pdf Size:215K _toshiba

2SB1416
2SB1416

4.2. 2sb1386_2sb1412_2sb1326.pdf Size:93K _rohm

2SB1416
2SB1416
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.50.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 (IC/IB = -4A / -0.1A) 1.5+0.2 -0.1 0.50.1 1.60.1 -0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / (1) (2) (3) 0.75 0.650.1 0.4+0.1 -0.05 0.9 2SD2118 / 2SD2097. 0.40.1 0.50.1 0.40.1 0.550.1 1.50.1 1.50.1 2.30.2 2.30.2 1.00.2 3.00.2 (1) (2) (3) Structure (1) Base (1) Base ROHM : MPT3 (2) Collector ROHM : CPT3 Epitaxial planar type (2) Collector EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter PNP silicon transistor Abbreviated symbol: BH? 2SB1326 2.50.2 6.80.2 0.65Max. 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 (1) Emitter ROHM : ATV (2) Collector (3) Base ? Denotes hFE + 0.3 - 0.1 1.5 0.3 + 0.2 0.9 1.5 5.5 4.0 0.3 2.

4.3. 2sb1418.pdf Size:61K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25?C) 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Unit 0.55 0.1 0.55 0.1 Collector to 2SB1418 60 VCBO V base voltage 2SB1418A 80 C1.0 1 2 3 Collector to 2SB1418 60 VCEO V emitter voltage 2SB1418A 80 1:Base 2.5 0.2 2.5 0.2 2:Collector Emitter to base voltage VEBO 5 V 3:Emitter MT4 Type Package Peak collector current ICP 4 A Collector current IC 2 A Internal Connection Collector power TC=25 C 15 C PC W dissipation Ta=25 C 2.0 B Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C E Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max

4.4. 2sb1417.pdf Size:55K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (TC=25?C) Parameter Symbol Ratings Unit 1.2 0.1 C1.0 Collector to 2SB1417 60 2.25 0.2 VCBO V 0.65 0.1 base voltage 2SB1417A 80 0.35 0.1 1.05 0.1 Collector to 2SB1417 60 0.55 0.1 VCEO V 0.55 0.1 emitter voltage 2SB1417A 80 Emitter to base voltage VEBO 6 V C1.0 1 2 3 Peak collector current ICP 5 A Collector current IC 3 A 2.5 0.2 2.5 0.2 1:Base Collector power TC=25 C 15 PC W 2:Collector dissipation Ta=25 C 2.0 3:Emitter MT4 Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Sym

4.5. 2sb1414.pdf Size:81K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 hFE vs. collector High transition frequency fT 0.70.1 Allowing automatic insertion with radial taping 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C 0.50.1 0.40.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -150 V 0.8 C 1 2 3 Collector-emitter voltage (Base open) VCEO -150 V 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 2.50.2 2.50.2 3: Base Collector current IC -1 A MT-3-A1 Package Peak collector current ICP -1.5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min

4.6. 2sb1412.pdf Size:186K _utc

2SB1416
2SB1416
UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ? FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SB1412L-x-TN3-T 2SB1412G-x-TN3-T TO-252 B C E Tube 2SB1412L-x-TN3-R 2SB1412G-x-TN3-R TO-252 B C E Tape Reel www.unisonic.com.tw 1 of 5 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R209-021.C 2SB1412 PNP SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25?C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -6 V Collector Current(DC) IC -5 A Collector Current(PULSE) Single pulse, Pw=10ms ICP -10 A Collector Power Dissipation 1 W PD Collector

4.7. 2sb1419.pdf Size:228K _inchange_semiconductor

2SB1416
2SB1416
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A Collector Power Dissipation 120 @ TC=25? PC W Collector Power Dissipation 3.5 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.8. 2sb1411.pdf Size:226K _inchange_semiconductor

2SB1416
2SB1416
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IBB= -2mA) APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 20 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon P

4.9. 2sb1412.pdf Size:255K _lge

2SB1416
2SB1416
2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V µA Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 µA DC current gain hFE VCE=-2V,IC=-500mA 82 3

4.10. 2sb1412.pdf Size:249K _wietron

2SB1416
2SB1416
2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to Base Voltage IC Collector Current -5 A PD TA = 25°C 1.0 W Total Device Disspation Tj +150 ?C Junction Temperature -55 to +150 Storage Temperature Tstg ?C Device Marking 2SB1412 = B1412 WEITRON 1/4 28-Oct-05 http://www.weitron.com.tw 2SB1412 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO -30 - - V IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-50µA, IC=0 Collector Cut-Off Current ICBO - - -500 n

Otros transistores... 2SB1409LC , 2SB1409S , 2SB1409SC , 2SB1409SD , 2SB141 , 2SB1411 , 2SB1413 , 2SB1415 , A1015 , 2SB1417 , 2SB1418 , 2SB1419 , 2SB142 , 2SB1421 , 2SB1422 , 2SB1429 , 2SB143 .

 

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