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2SB1416
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2SB1416
  2SB1416
  2SB1416
 
2SB1416
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Liste
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
Transistores bipolares. Manual. Hoja de especificaciones. Datasheet
 

2SB1416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1416

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 3

Temperatura operativa máxima (Tj), °C: 165

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 160

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SB1416

2SB1416 PDF doc:

1.1. 2sb1416.pdf Size:82K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.70.1 Allowing automatic insertion with radial taping 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C 0.50.1 0.40.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V 0.8 C 1 2 3 Collector-emitter voltage (Base open) VCEO -60 V 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 2.50.2 2.50.2 3: Base Collector current IC -3 A MT-3-A1 Package Peak collector current ICP -5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Un

4.1. 2sb1411.pdf Size:215K _toshiba

2SB1416
2SB1416

4.2. 2sb1386_2sb1412_2sb1326.pdf Size:93K _rohm

2SB1416
2SB1416
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.50.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 (IC/IB = -4A / -0.1A) 1.5+0.2 -0.1 0.50.1 1.60.1 -0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / (1) (2) (3) 0.75 0.650.1 0.4+0.1 -0.05 0.9 2SD2118 / 2SD2097. 0.40.1 0.50.1 0.40.1 0.550.1 1.50.1 1.50.1 2.30.2 2.30.2 1.00.2 3.00.2 (1) (2) (3) Structure (1) Base (1) Base ROHM : MPT3 (2) Collector ROHM : CPT3 Epitaxial planar type (2) Collector EIAJ : SC-62 (3) Emitter EIAJ : SC-63 (3) Emitter PNP silicon transistor Abbreviated symbol: BH? 2SB1326 2.50.2 6.80.2 0.65Max. 0.50.1 (1) (2) (3) 2.54 2.54 1.05 0.450.1 (1) Emitter ROHM : ATV (2) Collector (3) Base ? Denotes hFE + 0.3 - 0.1 1.5 0.3 + 0.2 0.9 1.5 5.5 4.0 0.3 2.

4.3. 2sb1417.pdf Size:55K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (TC=25?C) Parameter Symbol Ratings Unit 1.2 0.1 C1.0 Collector to 2SB1417 60 2.25 0.2 VCBO V 0.65 0.1 base voltage 2SB1417A 80 0.35 0.1 1.05 0.1 Collector to 2SB1417 60 0.55 0.1 VCEO V 0.55 0.1 emitter voltage 2SB1417A 80 Emitter to base voltage VEBO 6 V C1.0 1 2 3 Peak collector current ICP 5 A Collector current IC 3 A 2.5 0.2 2.5 0.2 1:Base Collector power TC=25 C 15 PC W 2:Collector dissipation Ta=25 C 2.0 3:Emitter MT4 Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C Electrical Characteristics (TC=25?C) Parameter Sym

4.4. 2sb1414.pdf Size:81K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 hFE vs. collector High transition frequency fT 0.70.1 Allowing automatic insertion with radial taping 0.70.1 1.150.2 1.150.2 Absolute Maximum Ratings Ta = 25C 0.50.1 0.40.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -150 V 0.8 C 1 2 3 Collector-emitter voltage (Base open) VCEO -150 V 1: Emitter Emitter-base voltage (Collector open) VEBO -5 V 2: Collector 2.50.2 2.50.2 3: Base Collector current IC -1 A MT-3-A1 Package Peak collector current ICP -1.5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min

4.5. 2sb1418.pdf Size:61K _panasonic

2SB1416
2SB1416
Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25?C) 0.35 0.1 1.05 0.1 Parameter Symbol Ratings Unit 0.55 0.1 0.55 0.1 Collector to 2SB1418 60 VCBO V base voltage 2SB1418A 80 C1.0 1 2 3 Collector to 2SB1418 60 VCEO V emitter voltage 2SB1418A 80 1:Base 2.5 0.2 2.5 0.2 2:Collector Emitter to base voltage VEBO 5 V 3:Emitter MT4 Type Package Peak collector current ICP 4 A Collector current IC 2 A Internal Connection Collector power TC=25 C 15 C PC W dissipation Ta=25 C 2.0 B Junction temperature Tj 150 ?C Storage temperature Tstg 55 to +150 ?C E Electrical Characteristics (TC=25?C) Parameter Symbol Conditions min typ max

4.6. 2sb1411.pdf Size:226K _inchange_semiconductor

2SB1416
2SB1416
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IBB= -2mA) APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous -0.5 A Collector Power Dissipation 2 @Ta=25? PC W Collector Power Dissipation 20 @TC=25? Junction Temperature 150 ? TJ Storage Temperature -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon P

4.7. 2sb1419.pdf Size:228K _inchange_semiconductor

2SB1416
2SB1416
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A Collector Power Dissipation 120 @ TC=25? PC W Collector Power Dissipation 3.5 @ Ta=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO

4.8. 2sb1412.pdf Size:255K _lge

2SB1416
2SB1416
2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V µA Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 Emitter cut-off current IEBO VEB=-5V,IC=0 -0.5 µA DC current gain hFE VCE=-2V,IC=-500mA 82 3

4.9. 2sb1412.pdf Size:249K _wietron

2SB1416
2SB1416
2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V VEBO -6 Collector to Base Voltage IC Collector Current -5 A PD TA = 25°C 1.0 W Total Device Disspation Tj +150 ?C Junction Temperature -55 to +150 Storage Temperature Tstg ?C Device Marking 2SB1412 = B1412 WEITRON 1/4 28-Oct-05 http://www.weitron.com.tw 2SB1412 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO -30 - - V IC=-50µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO -20 - - V IC=-1.0mA, IB=0 Emitter-Base Breakdown Voltage BVEBO -6 - - V IE=-50µA, IC=0 Collector Cut-Off Current ICBO - - -500 n

Otros transistores... 2SB1409LC , 2SB1409S , 2SB1409SC , 2SB1409SD , 2SB141 , 2SB1411 , 2SB1413 , 2SB1415 , A1015 , 2SB1417 , 2SB1418 , 2SB1419 , 2SB142 , 2SB1421 , 2SB1422 , 2SB1429 , 2SB143 .

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