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2SB1416 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1416

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.5

Tensión colector-base (Ucb): 60

Tensión colector-emisor (Uce): 0

Tensión emisor-base (Ueb): 5

Corriente del colector DC máxima (Ic): 3

Temperatura operativa máxima (Tj), °C: 165

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft):

Capacitancia de salida (Cc), pF:

Ganancia de corriente contínua (hfe): 160

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SB1416

2SB1416 PDF:

1.1. 2sb1416.pdf Size:82K _panasonic

2SB1416
2SB1416

Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.70.1 Allowing automatic insertion with radial taping 0.7

4.1. 2sb1411.pdf Size:215K _toshiba

2SB1416
2SB1416

4.2. 2sb1386_2sb1412_2sb1326.pdf Size:93K _rohm

2SB1416
2SB1416

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Units : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.50.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 (IC/IB = -4A / -0.1A) 1.5+0.2 -0.1 0.50.1 1.60.1 -0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD209

4.3. 2sb1418.pdf Size:61K _panasonic

2SB1416
2SB1416

Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit: mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25?C) 0.35 0.1 1.05 0

4.4. 2sb1417.pdf Size:55K _panasonic

2SB1416
2SB1416

Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit: mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (TC=25?C

4.5. 2sb1414.pdf Size:81K _panasonic

2SB1416
2SB1416

Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit: mm 7.50.2 4.50.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 hFE vs. collector High transition frequency fT 0.70.1 Allowing automatic insertion with radial tap

4.6. 2sb1412.pdf Size:186K _utc

2SB1416
2SB1416

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR ? DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ? FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Fr

4.7. 2sb1419.pdf Size:228K _inchange_semiconductor

2SB1416
2SB1416

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol

4.8. 2sb1411.pdf Size:226K _inchange_semiconductor

2SB1416
2SB1416

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -1A, IBB= -2mA) APPLICATIONS ·High power switching applications. ·Hammer d

4.9. 2sb1412.pdf Size:255K _lge

2SB1416
2SB1416

2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -5 A PC Collector Pow

4.10. 2sb1412.pdf Size:249K _wietron

2SB1416
2SB1416

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features: * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data: * Case : Molded Plastic * Weight : 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltage V

4.11. 2sb1412.pdf Size:1550K _kexin

2SB1416
2SB1416

SMD Type Transistors PNP Transistors 2SB1412 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 ■ Features +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Excellent DC current gain characteristics ● Low VCE(SAT) VCE(SAT)= -0.35V (Typ) 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbo

Otros transistores... 2SB1409LC , 2SB1409S , 2SB1409SC , 2SB1409SD , 2SB141 , 2SB1411 , 2SB1413 , 2SB1415 , A1015 , 2SB1417 , 2SB1418 , 2SB1419 , 2SB142 , 2SB1421 , 2SB1422 , 2SB1429 , 2SB143 .

 


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