STGB3NC120HD - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: STGB3NC120HD

Polarité: N-Channel

Puissance maximale dissipée (Pc): 75W

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 1200V

Tension de saturation collecteur émetteur (Ucesat): 2.2V

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 3A

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation:

Capacité de sortie (Cc), pF:

Boitier: D2PAK

Recherche équivalences (un remplaçant pour le transistor STGB3NC120HD )

STGB3NC120HD - Fiche technique PDF, Datasheet

1.1. stgb3nc120hd_stgf3nc120hd_stgp3nc120hd.pdf Size:750K _st

rward current at TC = 25 °C 3 A Surge non repetitive forward current IFSM 12 A tp=10 ms sinusoidal PTOT Total dissipation at TC = 25 °C 25 75 W Insulation withstand voltage (RMS) from all VISO 2500 V three leads to external heat sink TJ Operating junction temperature -55 to 150 °C 1. Calculated according to the iterative formula: Tj(max) – TC IC(TC) = ------------------------------------------------------------------------------------------------------- Rthj – c ? VCE(sat)(max)(Tj(m

4.1. stgb3nb60sd.pdf Size:339K _st

= 250 µA 2.5 5 V VCE(SAT) Collector-Emitter Saturation VGE = 15 V IC = 1.5 A 1 V 1.5 VGE = 15 V IC = 3 A 1.2 V Voltage VGE = 15 V ID = 3 A Tj = 125 °C 1.1 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs Forward Transconductance VCE = 25 V IC = 3 A 1.7 2.5 S Cies Input Capacitance VCE = 25V f = 1 MHz VGE = 0 255 330 pF Coes Output Capacitance 30 40 pF Cres Reverse Transfer Capacitanc- 5.6 7 pF es QG Total Gate Charge VCE=480V IC=3 A VGE=15 V 18 nC QGE Gate-Emitte

5.1. stgb35n35lz_stgp35n35lz.pdf Size:741K _st

IC (1) Continuous collector current at TC = 25 °C 40 A IC (1) Continuous collector current at TC = 100 °C 30 A ICP (2) Pulsed collector current 80A VGE Gate-emitter voltage VGE (clamped) V PTOT Total dissipation at TC = 25 °C 176 W Single pulse energy EAS 450 mJ (TC=25 °C, L=1.6 mH, IC = 22 A, VCC = 50 V) Human body model (R=1,5 k?, C=100 pF) 8 kV ESD Machine model (R=0, C=100 pF) 800 V Charged device model 2 kV Tstg Storage temperature – 55 to 175 °C Tj Operating junction temperat

5.2. stgb30nc60k_stgp30nc60k.pdf Size:388K _st

°C, RG = 10 ?, VGE = 12 V Tj Operating junction temperature – 55 to 150 °C 1. Calculated according to the iterative formula: TJ(MAX) – Tc Ic(Tc) = ------------------------------------------------------------------------------------- - Rthj – c ? VCE(sat)(MAX) ? (Tc,I ) c 2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 ?, VGE = 15 V 3. Pulse width limited by max. junction temperature allowed Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case

D'autres types de IGBT... STGB19NC60KD , STGB19NC60S , STGB19NC60W , STGB20NB41LZ , STGB20NC60V , STGB30NC60K , STGB35N35LZ , STGB3NB60SD , IXDH30N120AU1 , STGB6NC60HD , STGB7NC60HD , STGB8NC60K , STGB8NC60KD , STGBL6NC60D , STGBL6NC60DI , STGD10HF60KD , STGD10NC60H .