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RJP30H1DPD - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Marquage composant: RJP30H1DPD

Polarité: N-Channel

Puissance maximale dissipée (Pc):

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 360V

Tension de saturation collecteur émetteur (Ucesat): 1.5V

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 30A

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation: 150

Capacité de sortie (Cc), pF:

Boitier: TO252

Recherche équivalences (un remplaçant pour le transistor RJP30H1DPD )

RJP30H1DPD PDF doc:

1.1. r07ds0466ej_rjp30h1dpp.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr =80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ. ? Low leak current: ICES = 1 ?A max. ? Isolated package TO-220FL

1.2. r07ds0465ej_rjp30h1dpd.pdf Size:151K _renesas

RJP30H1DPD
RJP30H1DPD

Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? High speed switching: tr = 80 ns typ., tf = 150 ns typ. ? Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. ? Low leak current: ICES = 1 ?A max. Outline RENESAS Package co

1.3. rjp30h1dpp-m0.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPP-M0 R07DS0466EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr =80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.  Low leak current: ICES = 1 A max.  Isolated p

1.4. rjp30h1dpd.pdf Size:130K _igbt

RJP30H1DPD
RJP30H1DPD

 Preliminary Datasheet RJP30H1DPD R07DS0465EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENES

D'autres types de IGBT... RJH60M3DPP-M0 , RJH60M3DPQ-A0 , RJH60M5DPQ-A0 , RJH60M6DPQ-A0 , RJH60M7DPQ-A0 , RJH60T4DPQ-A0 , RJP30E2DPP-M0 , RJP30E3DPP-M0 , SGW30N60HS , RJP30H1DPP-M0 , RJP30H2DPK-M0 , RJP30K3DPP-M0 , RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM .

 


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INDEX

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IGBT IRGP4263 | AP50G60SW | NGTB60N60SWG | NGTB60N60S | NGTG15N120FL2WG | NGTG15N120FL2 | NGTB15N120FL2WG | NGTB15N120FL2 | RJH1CV6DPK | MM60G60B |

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