BT15N60A9F Répertoire mondial des transistors gratuit

 

BT15N60A9F - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Type: BT15N60A9F

Polarité: N-Channel

Puissance maximale dissipée (Pc): 25

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Vce): 600

Tension de saturation collecteur émetteur (Vcesat): 2.6

Tension Grille – Émetteur (Veg): 20

Courant de Collecteur en DC (Ic): 15

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation: 18

Capacité de sortie (Cc), pF: 94

Boitier: TO220F

Recherche équivalences (un remplaçant pour le transistor BT15N60A9F )

BT15N60A9F 说明书

1.1. bt15n60a9f.pdf Size:102K _igbt_a

BT15N60A9F
BT15N60A9F

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

1.2. bt15n60a9f.pdf Size:102K _crhj

BT15N60A9F
BT15N60A9F

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

5.1. bt15n120anf.pdf Size:253K _igbt_a

BT15N60A9F
BT15N60A9F

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

5.2. bt15n120anf.pdf Size:254K _crhj

BT15N60A9F
BT15N60A9F

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

D'autres types de IGBT... SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , 10N40F1D , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF .

 


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INDEX

UPDATE

IGBT FF1000R17IE4D_B2 | FF1000R17IE4 | FD-DF80R12W1H3_B52 | FD900R12IP4DV | FD900R12IP4D | FD800R33KL2C-K_B5 | FD800R33KF2C-K | FD800R33KF2C | FD800R17KF6C_B2 | FD800R17KE3_B2 |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché