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IRG4BC30W-S - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Marquage composant: IRG4BC30W-S

Polarité: N-Channel

Puissance maximale dissipée (Pc): 100W

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 600V

Tension de saturation collecteur émetteur (Ucesat): 2.1V

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 12A

Température maximale de jonction en fonctionnement (Tj), °C: 150

Temps de commutation:

Capacité de sortie (Cc), pF:

Boitier: D2PAK

Recherche équivalences (un remplaçant pour le transistor IRG4BC30W-S )

IRG4BC30W-S PDF doc:

1.1. irg4bc30w.pdf Size:139K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T D T I T I T Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

1.2. irg4bc30w-s.pdf Size:188K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E Low IGBT conduction losses n-channel Latest

2.1. irg4bc30s.pdf Size:161K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T I T D T I T I T Features C Features Features Features Features Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 Industry standard TO-

2.2. irg4bc30kds.pdf Size:225K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed

2.3. irg4bc30u-s.pdf Size:308K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E Industry standa

2.4. irg4bc30ud.pdf Size:234K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and highe

2.5. irg4bc30fd.pdf Size:412K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.59V Generation 4 IGBT design provides tighter G parameter distribution and higher eff

2.6. irg4bc30k-s.pdf Size:161K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation design provides

2.7. irg4bc30kd.pdf Size:196K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD -91595A IRG4BC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed

2.8. irg4bc30k.pdf Size:137K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design provides t

2.9. irg4bc30s-s.pdf Size:152K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tight parameter distribution and high efficiency VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E n-channel Benefits Generation 4 IGBTs offer highest effici

2.10. irg4bc30u.pdf Size:167K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE

2.11. irg4bc30f.pdf Size:167K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T I T D T I T I T Features C Features Features Features Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.59V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

D'autres types de IGBT... IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , RJP63K2DPK-M0 , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD .

 


IRG4BC30W-S
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INDEX

UPDATE

IGBT BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché