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IRG4PC50UD - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques

Marquage composant: IRG4PC50UD

Polarité: N-Channel

Puissance maximale dissipée (Pc): 200W

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 600V

Tension de saturation collecteur émetteur (Ucesat):

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 27A

Température maximale de jonction en fonctionnement (Tj), °C: 175

Temps de commutation:

Capacité de sortie (Cc), pF:

Boitier: TO247AC

Recherche équivalences (un remplaçant pour le transistor IRG4PC50UD )

IRG4PC50UD PDF doc:

1.1. irg4pc50ud.pdf Size:213K _international_rectifier

IRG4PC50UD
IRG4PC50UD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V Generation 4 IGBT design provides tighter G parameter distribution and highe

1.2. irg4pc50u.pdf Size:147K _international_rectifier

IRG4PC50UD
IRG4PC50UD

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE =

1.3. irg4pc50ud.pdf Size:219K _igbt_a

IRG4PC50UD
IRG4PC50UD

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution an

1.4. irg4pc50u.pdf Size:153K _igbt_a

IRG4PC50UD
IRG4PC50UD

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3

D'autres types de IGBT... IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , 14N36GVL , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K .

 


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INDEX

UPDATE

IGBT IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

Les mots de moins de 2 lettres (chiffres) sont ignorés lors de la recherché