IXGH20N60BD1 - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IXGH20N60BD1

Polarité: N-Channel

Puissance maximale dissipée (Pc):

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 600V

Tension de saturation collecteur émetteur (Ucesat):

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 40A

Température maximale de jonction en fonctionnement (Tj), °C: 175

Temps de commutation: 100

Capacité de sortie (Cc), pF:

Boitier: TO247

Recherche équivalences (un remplaçant pour le transistor IXGH20N60BD1 )

IXGH20N60BD1 - Fiche technique PDF, Datasheet

1.1. ixgh20n60-a_ixgm20n60-a.pdf Size:64K _ixys

Hz 200 pF Cres 40 pF Qg 100 120 nC Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 20 30 nC Qgc 60 90 nC ° Inductive load, TJ = 25° °C ° ° td(on) 100 ns 1 = Gate IC = IC90, VGE = 15 V, L = 300 µH 2 = Collector tri 200 ns VCE = 0.8 VCES, RG = Roff = 82 ? 3 = Emitter Tab = Collector td(off) Switching times may increase 600 ns for VCE (Clamp) > 0.8 • VCES, tfi 20N60A 200 ns higher TJ or increased RG Eoff 20N60A 1.5 mJ ° Inductive load, TJ = 25° °C ° ° td(on) 100 ns IC = IC90,

3.1. ixga20n120a3_ixgh20n120a3_ixgp20n120a3.pdf Size:236K _ixys

0 nC Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES 7.3 nC Qgc 23 nC td(on) 16 ns ° Inductive Load, TJ = 25° °C ° ° tri 44 ns IC = 20A, VGE = 15V Eon 2.85 mJ 1 = Gate VCE = 960V, RG = 10? td(off) 290 ns 2 = Collector Note 2 tfi 715 ns 3 = Emitter Tab = Collector Eoff 6.47 mJ td(on) 16 ns ° Inductive Load, TJ = 125° °C ° ° tri 50 ns IC = 20A, VGE = 15V Eon 5.53 mJ td(off) VCE = 960V, RG = 10? 310 ns Note 2 tfi 1220 ns Eoff 10.10 mJ RthJC 0.69 °C/W RthCK TO-220 0.50 °

3.2. ixgh20n100_ixgt20n100.pdf Size:53K _ixys

ulse test, t ? 300 ms, duty cycle ? 2 % IC(ON) VGE = 10V, VCE = 10V 90 A Cies 1750 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF Cres 38 pF Qg 73 nC Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 13 nC Qgc 26 nC Dim. Millimeter Inches Min. Max. Min. Max. td(on) Inductive load, TJ = 25°C 30 ns A 19.81 20.32 0.780 0.800 tri IC = IC90, VGE = 15 V, L = 100 mH, 30 ns B 20.80 21.46 0.819 0.845 VCE = 0.8 VCES, RG = Roff = 47 W C 15.75 16.26 0.610 0.640 td(off) 350 700 ns D 3.55 3.65 0.14

3.3. ixgh20n120b_ixgt20n120b.pdf Size:568K _ixys

e Dim. Millimeter Inches Qgc 27 nC Min. Max. Min. Max. A 4.7 5.3 .185 .209 td(on) 25 ns A1 2.2 2.54 .087 .102 tri 15 ns A2 2.2 2.6 .059 .098 ° Inductive load, TJ = 25° °C ° ° b 1.0 1.4 .040 .055 td(off) 150 280 ns IC = 20 A, VGE = 15 V b1 1.65 2.13 .065 .084 VCE = 0.8 VCES, RG = Roff = 10 ? b2 2.87 3.12 .113 .123 tfi 160 320 ns C .4 .8 .016 .031 Eoff 2.1 3.5 mJ D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 td(on) 25 ns e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 tr

3.4. ixgh20n120_ixgt20n120.pdf Size:106K _ixys

nches ° Inductive load, TJ = 25° °C ° ° td(on) 28 ns Min. Max. Min. Max. A 4.7 5.3 .185 .209 IC = IC90, VGE = 15 V tri 20 ns A1 2.2 2.54 .087 .102 VCE = 800 V, RG = Roff = 47 ? A2 2.2 2.6 .059 .098 td(off) 400 800 ns b 1.0 1.4 .040 .055 Remarks: Switching times may tfi 380 700 ns b1 1.65 2.13 .065 .084 increase for VCE (Clamp) > 0.8 VCES, b2 2.87 3.12 .113 .123 Eoff 6.5 10.5 mJ higher TJ or increased RG C .4 .8 .016 .031 D 20.80 21.46 .819 .845 td(on) 30 ns E 15.75 16.26

D'autres types de IGBT... IXGH17N100 , IXGH17N100A , IXGH17N100AU1 , IXGH17N100U1 , IXGH20N100 , IXGH20N30 , IXGH20N30S , IXGH20N60B , P12N60C3 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , IXGH24N60BU1 , IXGH24N60C .