IXGT32N60BD1 - IGBT. Les principales caractéristique des transistors. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IXGT32N60BD1

Polarité: N-Channel

Puissance maximale dissipée (Pc):

Tension maximale de VCE au delà de laquelle le transistor risque d'être détruit (Uce): 600V

Tension de saturation collecteur émetteur (Ucesat):

Tension Grille – Émetteur (Ueg):

Courant de Collecteur en DC (Ic): 60A

Température maximale de jonction en fonctionnement (Tj), °C: 175

Temps de commutation: 80

Capacité de sortie (Cc), pF:

Boitier: TO268

Recherche équivalences (un remplaçant pour le transistor IXGT32N60BD1 )

IXGT32N60BD1 - Fiche technique PDF, Datasheet

3.1. ixgh32n90b2_ixgt32n90b2.pdf Size:202K _ixys

VCE = 0.5 VCES 15 nC Dim. Millimeter Inches Qgc 34 nC Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 td(on) 20 ns A2 2.2 2.6 .059 .098 ° Inductive load, TJ = 25° °C ° ° tri 22 ns b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 IC = IC110 , VGE = 15 V td(off) 260 400 ns b2 2.87 3.12 .113 .123 VCE = 720 V, RG = Roff = 5 ? tfi 150 ns C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Eoff 2.6 4.5 mJ E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 td(on) 20 ns L 19.81 20.

3.2. ixgh32n170_ixgt32n170.pdf Size:577K _ixys

e specified) min. typ. max. gfs IC = IC90; VCE = 10 V, 22 30 S Pulse test, t ? 300 µs, duty cycle ? 2 % ? P IC(ON) VGE = 10V, VCE = 10V 120 A Cies 3500 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 165 pF Cres 40 pF e Qg 155 nC Dim. Millimeter Inches Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 30 nC Min. Max. Min. Max. A 4.7 5.3 .185 .209 Qgc 51 nC A1 2.2 2.54 .087 .102 A2 2.2 2.6 .059 .098 td(on) 45 ns b 1.0 1.4 .040 .055 ° Inductive load, TJ = 25° °C ° ° b1 1.65 2.13 .065 .08

3.3. ixgh32n170a_ixgt32n170a.pdf Size:572K _ixys

min. typ. max. gfs IC = I90; VCE = 10 V 16 26 S Note 2 ? P Cies 3700 pF Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 180 pF Cres 43 pF Qg 155 nC Qge IC = IC90, VGE = 15 V, VCE = 0.5 VCES 28 nC e Dim. Millimeter Inches Qgc 49 nC Min. Max. Min. Max. A 4.7 5.3 .185 .209 ° °C ° ° td(on) Inductive load, TJ = 25° 46 ns A1 2.2 2.54 .087 .102 tri IC = IC25, VGE = 15 V 57 ns A2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 td(off) RG = 2.7 ?, VCE = 0.5 VCES 260 500 ns b1 1.65 2.13 .065 .084 No

3.4. ixgh32n90b2d1_ixgt32n90b2d1.pdf Size:219K _ixys

nC Dim. Millimeter Inches Qgc 34 nC Min. Max. Min. Max. A 4.7 5.3 .185 .209 A1 2.2 2.54 .087 .102 td(on) 20 ns A2 2.2 2.6 .059 .098 Inductive load, TJ = 25°C tri 22 ns b 1.0 1.4 .040 .055 b1 1.65 2.13 .065 .084 IC = IC110 , VGE = 15 V td(off) 260 400 ns b2 2.87 3.12 .113 .123 VCE = 720 V, RG = Roff = 5 ? tfi 150 ns C .4 .8 .016 .031 D 20.80 21.46 .819 .845 Eoff 2.2 4.5 mJ E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 td(on) 20 ns L 19.81 20.32 .780 .800 L1 4.50 .177 tri

D'autres types de IGBT... IXGT28N30 , IXGT28N30A , IXGT28N30B , IXGT28N60B , IXGT28N60D1 , IXGT28N90B , IXGT31N60 , IXGT31N60D1 , IXGH48N60A3D1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IXSH10N120A .