STB12NM50 MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: STB12NM50

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 160

Tension drain-source de rupture (Uds): 500V

Tension grille-source de rupture (Ugs):

Courant de drain maximum supportable (Id): 12

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.35

Boitier: D2PAK

Recherche équivalences (un remplaçant pour le transistor STB12NM50 )

STB12NM50 - Fiche technique PDF, Datasheet

1.1. stb12nm50fd_stp12nm50fd-fp_stw14nm50fd.pdf Size:483K _st

80%V(BR)DSS 12A, di/dt ? Table 2. Thermal resistance Value Symbol Parameter Unit TO-220 D?PAK TO-220FP TO-247 I?PAK Rthj-case Thermal resistance junction-case Max 0.78 3.57 0.77 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 100 62.5 °C/W Maximum lead temperature for soldering Tl 300 °C purpose Table 3. Avalanche data Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive IAR 6A (pulse width limited by Tj Max) Single pulse avalanche energy EAS 4

1.2. stb12nm50nd_std12nm50nd_stf12nm50nd.pdf Size:1025K _st

Table 4. Avalanche characteristics Symbol Parameter Max value Unit Avalanche current, repetitive or not-repetitive IAS 5A (pulse width limited by Tj max) Single pulse avalanche energy EAS 350 mJ (starting Tj = 25 °C, ID = IAS, VDD = 50 V) Doc ID 14936 Rev 2 3/16 Electrical characteristics STB12NM50ND, STD12NM50ND, STF12NM50ND 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-

1.3. stp12nm50_stp12nm50fp_stb12nm50_stb12nm50-1.pdf Size:542K _st

hermal resistance junction-case Max 0.78 3.57 °C/W Rthj-a Thermal resistance junction-ambient Max 62.5 °C/W Maximum lead temperature for soldering Tl 300 °C purpose Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive IAS 6A (pulse width limited by Tj Max) Single pulse avalanche energy EAS 400 mJ (starting Tj=25°C, Id=Iar, Vdd=50V) 3/17 Electrical characteristics STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1 2 Electrical ch

1.4. stb12nm50n_std12nm50n_sti12nm50n_stf12nm50n_stp12nm50n.pdf Size:586K _st

?PAK DPAK D?PAK TO-220FP Rthj-case Thermal resistance junction- 1.25 5 °C/W case max Rthj-amb Thermal resistance junction-amb 62.5 -- -- 62.5 °C/W max Rthj-pcb Thermal resistance junction-pcb -- -- 50 30 -- °C/W max Tl Maximum lead temperature for 300 °C soldering purposes Table 4. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not-repetitive IAS 5A (pulse width limited by Tj Max) Single pulse avalanche energy EAS 350 mJ (starting Tj=2

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