IPB80N06S2-07 MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IPB80N06S2-07

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 250

Tension drain-source de rupture (Uds): 55V

Tension grille-source de rupture (Ugs):

Courant de drain maximum supportable (Id): 80

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.0063

Boitier: PGTO26332

Recherche équivalences (un remplaçant pour le transistor IPB80N06S2-07 )

IPB80N06S2-07 - Fiche technique PDF, Datasheet

1.1. ipp80n06s2l-11_ipb80n06s2l-11_ipi80n06s2l-11.pdf Size:132K _infineon

A, GS F V Diode forward voltage - 1 1.3 V SD T =25 °C j V =30 V, I =I , R F S t - 54 67 ns Reverse recovery time2) rr di /dt =100 A/µs F Q - 61 76 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.95K/W the chip is able to carry 83A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Devi

1.2. ipp80n06s2-h5_ipb80n06s2-h5_green.pdf Size:155K _infineon

covery charge2) rr di /dt =100 A/µs F 1) Current is limited by bondwire; with an R = 0.5 K/W the chip is able to carry 170 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

1.3. ipp80n06s2l-h5_ipb80n06s2l-h5_green.pdf Size:155K _infineon

ns Reverse recovery time2) rr di /dt =100 A/µs F V =30 V, I =I , R F S Q - 169 210 nC Reverse recovery charge2) rr di /dt =100 A/µs F 1) Current is limited by bondwire; with an R = 0.5 K/W the chip is able to carry 170 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR

1.4. ipp80n06s2-08_ipb80n06s2-08_ipi80n06s2-08_green.pdf Size:158K _infineon

Reverse recovery time2) rr di /dt =100 A/µs F Q - 85 110 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.7 K/W the chip is able to carry 109 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area

1.5. ipp80n06s2l-05_ipb80n06s2l-05_ipi80n06s2l-05_green.pdf Size:158K _infineon

V, I =80 A, GS F V Diode forward voltage - 0.9 1.3 V SD T =25 °C j V =30 V, I =I , R F S t - 65 80 ns Reverse recovery time2) rr di /dt =100 A/µs F Q - 125 160 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.5 K/W the chip is able to carry 173 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -2

1.6. ipp80n06s2-05_ipb80n06s2-05_green.pdf Size:155K _infineon

overy charge2) rr di /dt =100 A/µs F 1) Current is limited by bondwire; with an R = 0.5 K/W the chip is able to carry 170 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. R

1.7. ipp80n06s4l_ipb80n06s4l_ipi80n06s4l-07.pdf Size:170K _infineon

R F t - 39 - ns Reverse recovery time2) rr di /dt =100A/µs F Q - 38 - nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 1.9K/W the chip is able to carry 82A at 25°C. thJC 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L

1.8. ipp80n06s4_ipb80n06s4_ipi80n06s4-05.pdf Size:170K _infineon

charge2) rr 1) Current is limited by bondwire; with an R = 1.4K/W the chip is able to carry 106A at 25°C. thJC 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-24 IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 1 Power dissipation 2 Drain current P = f(T ); V ? 6 V I = f(T ); V ? 6 V; SMD tot C GS D C

1.9. ipp80n06s2l-09_ipb80n06s2l-09_green.pdf Size:155K _infineon

s Reverse recovery time2) rr di /dt =100 A/µs F Q - 70 90 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.8 K/W the chip is able to carry 103 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area

1.10. ipp80n06s2l-07_ipb80n06s2l-07_green.pdf Size:155K _infineon

Reverse recovery time2) rr di /dt =100 A/µs F Q - 80 100 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.7 K/W the chip is able to carry 121 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area f

1.11. ipp80n06s2-07_ipb80n06s2-07_ipi80n06s2-07_green.pdf Size:158K _infineon

s Reverse recovery time2) rr di /dt =100 A/µs F Q - 96 120 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.6 K/W the chip is able to carry 135 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper are

1.12. ipp80n06s2-09_ipb80n06s2-09_green.pdf Size:155K _infineon

nt is limited by bondwire; with an R = 0.8 K/W the chip is able to carry 99 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13. 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2006-03-13 IPB80N06S2-09 IPP80N06

1.13. ipp80n06s2l-06_ipb80n06s2l-06_green.pdf Size:155K _infineon

s Reverse recovery time2) rr di /dt =100 A/µs F Q - 92 115 nC Reverse recovery charge2) rr 1) Current is limited by bondwire; with an R = 0.6 K/W the chip is able to carry 138 A at 25°C. For detailed thJC information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area

D'autres types de transistors... IPB80N04S2L-03 , IPB80N04S3-03 , IPB80N04S3-04 , IPB80N04S3-06 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , 2N5485 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , IPB80N06S2L-06 , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 .