IPP039N04LG MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IPP039N04LG

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 94

Tension drain-source de rupture (Uds): 40V

Tension grille-source de rupture (Ugs):

Courant de drain maximum supportable (Id): 80

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.0052

Boitier: TO220

Recherche équivalences (un remplaçant pour le transistor IPP039N04LG )

IPP039N04LG - Fiche technique PDF, Datasheet

5.1. ipp030n10n3g_rev21.pdf Size:536K _infineon

Diode continous forward current - - 100 A S T =25 °C C I Diode pulse current - - 400 S,pulse V =0 V, I =100 A, GS F V Diode forward voltage - 1 1.2 V SD T =25 °C j t Reverse recovery time - 86 - ns rr V =50 V, I =I , R F S di /dt =100 A/µs F Q Reverse recovery charge - 232 - nC rr 4) See figure 16 for gate charge parameter definition Rev. 2.1 page 3 2011-07-18 IPP030N10N3 G IPI030N10N3 G 1 Power dissipation 2 Drain current P =f(T ) I =f(T ); V ?10 V tot C D C GS

5.2. ipp030n10n3g_rev2[1].1.pdf Size:575K _infineon

C 101 10 1 DC 1 100 1 C9>7<5 @E, V +), p DS + 5F @175 D t?t I + , P +* , D I + , thJC Z + * ,  $$ " " $ " " 'D< ;@?<@? /4-=-/?1=5>?5/> 'D< 0=-5: >;@=/1 ;: =1>5>?-:/1 = T = T D D j D n) D j @1B1=5D5B @1B1=5D5B G G 300 6 . . 250 5 . . . . 200 4 . . 150 3 . . . 100 2 50 1 0 0 0 1 2 0 40 80 120 160 V +), I + , DS D 'D< ?=-:>21= /4-=-/?1=5>?5/> 'D< 2;=B-=0 ?=-

5.3. ipp034n03l_rev2.0.pdf Size:726K _infineon

ise time - 6.4 - r V =15 V, V =10 V, DD GS I =30 A, R =1.6 W D G t Turn-off delay time - 35 - d(off) t Fall time - 5.4 - f Gate Charge Characteristics5) Q Gate to source charge - 12 - nC gs Q Gate charge at threshold - 6.3 - g(th) Q Gate to drain charge - 5.6 - gd V =15 V, I =30 A, DD D V =0 to 4.5 V GS Q Switching charge - 11 - sw Q Gate charge total - 25 - g Gate plateau voltage V - 2.9 - V plateau V =15 V, I =30 A, DD D Q Gate charge total - 51 - g V =0

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