IPP05CN10LG MOSFET - Les principales caractéristique des MOSFET. Caractéristiques techniques. Répertoire mondial des transistors.

Marquage composant: IPP05CN10LG

Type de transistor: MOSFET

Polarité: N

Puissance maximale dissipée (Pd): 300

Tension drain-source de rupture (Uds): 100V

Tension grille-source de rupture (Ugs):

Courant de drain maximum supportable (Id): 100

Température maximale de jonction en fonctionnement (Tj), °C:

Temps de commutation (tr):

Capacité de sortie (Cd), pF:

Résistance drain-source RDS (activé), Ohm: 0.0051

Boitier: TO220

Recherche équivalences (un remplaçant pour le transistor IPP05CN10LG )

IPP05CN10LG - Fiche technique PDF, Datasheet

1.1. ipp05cn10l_rev1[1].02.pdf Size:563K _infineon

t C p D5F5A9H9F D5F5A9H9F = p p 103 100 ZG ZG ZG 102 AG 10 1 AG 1 101 DC 1 100 G=B;@9 DI@G9 10 2 10 1 10 2 10 3 0.1 1 10 100 1000 10 5 10 4 10 3 10 2 10 1 100 304 D t ,?- p - 9J D5;9 D t?t I , - P ,+ - 3 4 D thJC Z , + -  %% # ! (E= .0@2>6?@60? (E= 1>.6; ?02 <; >2?6?@.;02 = X = X D D j D n) D j D5F5A9H9F D5F5A9H9F G G 400 12 0 0 0 0 320 9 0 0 240 0 6 0 0 160 0 0 3 80 0 0 0 0 0 1 2 3 4 5

1.2. ipp05cn10n_rev1.2.pdf Size:781K _infineon

verse Diode I :@56 4@?E:?@FD 7@CH2C5 4FCC6?E ? ? 100 A S T U C I :@56 AF=D6 4FCC6?E ? ? 400 S pulse V / I GS F V :@56 7@CH2C5 G@=E286 ? 1.0 1.2 V SD T U j t , 6G6CD6 C64@G6CJ E:>6 ? 110 ns rr V / I =I F S di /dt WD F , 6G6CD6 C64@G6CJ 492C86 Q ? 60 ? nC rr 6) -66 7:8FC6 7@C 82E6 492C86 A2C2>6E6C 567:?:E:@? , 6G A286 IPB05CN10N G IPI05CN10N G IPP05CN10N G 1 Power dissipation 2 Drain current P =f(T ) I =f(T V / tot C D C GS 350 120 300 100 250 80 20

5.1. ipp055n03l_rev2.0.pdf Size:730K _infineon

Rise time - 5.2 - r V =15 V, V =10 V, DD GS I =30 A, R =1.6 W D G t Turn-off delay time - 25 - d(off) Fall time t - 4.0 - f Gate Charge Characteristics5) Q Gate to source charge - 7.5 - nC gs Gate charge at threshold Q - 3.8 - g(th) Q Gate to drain charge - 3.5 - gd V =15 V, I =30 A, DD D V =0 to 4.5 V GS Q Switching charge - 7.1 - sw Q Gate charge total - 15 - g V Gate plateau voltage - 3.1 - V plateau V =15 V, I =30 A, DD D Q Gate charge total - 31 - g V

5.2. ipp054ne8n_rev1.2.pdf Size:875K _infineon

I =I i t WD , 6G6CD6 C64@G6CJ 492C86 Q ? 4 ? nC ãã ) -66 7:8FC6 7@C 82E6 492C86 A2C2>6E6C 567:?:E:@? , 6G A286 IPB051NE8N G IPI05CNE8N G IPP054NE8N G 1 Power dissipation 2 Drain current P = T ) I = T V / t t C D C G 350 120 300 100 250 80 200 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = V T U D = Z = t ) D D C t C p A2C2>6E6C t A2C2>6E6C D =t T p p 1000 100 WD

5.3. ipp052n06l3_ipb052n06l3_rev2.4.pdf Size:683K _infineon

82E6 492C86 A2C2>6E6C 567:?:E:@? , 6G A286 IPB049N06L3 G IPP052N06L3 G 1 Power dissipation 2 Drain current P = T ) I = T V / t t C D C G 120 100 100 80 80 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = V T U D = Z = t ) D D C t C p A2C2>6E6C t A2C2>6E6C D =t T p p 103 101 =:>:E65 3J @? DE2E6 ãe i t n e XD XD 102 XD 100 >D >D 101 DC 1 10-1 1 100 D:?8=6 AF=D6

5.4. ipp057n06n3_ipb057n06n3_rev2.2.pdf Size:691K _infineon

7N06N3 G 1 Power dissipation 2 Drain current P = T ) I = T V . t t C D C G 120 100 100 80 80 60 60 40 40 20 20 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = V T T D = Z = t ) D D C t C p @1B1=5D5B t @1B1=5D5B D =t T p p 103 101 <9=9D54 2I ?> CD1D5 WC ãe i t n e WC 102 WC 100 =C =C 101 DC 1 10-1 1 100 C9>7<5 @E

5.5. ipb050n06ng_ipp050n06ng_rev1.16.pdf Size:731K _infineon

350 120 300 100 250 80 200 60 150 40 100 20 50 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance I = V T R D = Z = t ) D D C t C p ?0@0< 4B4@ t ?0@0< 4B4@ D =t T p p 100 TA ;8< 8B43 1G >= AB0B4 ãe i t n e TA TA 102 DC < A 10-1 1 < A 101 10-2 1 100 A8=6;4 ?C;A4 10-1 10-3 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p * 4D ?064 D tot I [A] P [W] D I [A] th

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